CN104947085A - Deposition method of mask, mask and etching method of semiconductor device - Google Patents
Deposition method of mask, mask and etching method of semiconductor device Download PDFInfo
- Publication number
- CN104947085A CN104947085A CN201410127676.7A CN201410127676A CN104947085A CN 104947085 A CN104947085 A CN 104947085A CN 201410127676 A CN201410127676 A CN 201410127676A CN 104947085 A CN104947085 A CN 104947085A
- Authority
- CN
- China
- Prior art keywords
- mask
- deposition
- deposition method
- reaction chamber
- plasma treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a deposition method of a mask, the mask and an etching method of a semiconductor device. The deposition method comprises the following steps: performing deposition, namely introducing a gas for reaction into a reaction chamber, and turning on a plasma generator to deposit the mask on a semiconductor base material; performing plasma treatment, namely stopping introducing the gas for reaction, keeping the plasma generator in a turn-on state, evacuating the reaction chamber, and introducing a nonreactive gas to perform plasma treatment on the mask; and repeating the steps of deposition and plasma treatment for multiple times to form the needed mask. In the method, by replacing the gas in the reaction chamber with the nonreactive gas under the condition that the plasma generator is kept the turn-on state to end deposition reaction, a nucleating center formed by chemical bond groups of the gas for reaction remained on the surface of the mask is avoided, thereby improving the quality of the formed mask.
Description
Technical field
The application relates to semiconductor integrated circuit manufacture technology field, in particular to the lithographic method of a kind of deposition method of mask, mask that the method is formed and semiconducter device.
Background technology
In the etching process of semiconducter device, in order to avoid semiconducter device to be etched because etching process is damaged, usual needs first form the patterned mask structure of one deck on device to be etched, then according to the device to be etched of the pattern etching in mask structure, form required semiconducter device.Such as, in the making processes of interconnection layer, usually on medium layer, form the hard mask of TiN and SiO successively
2mask suffers damage at follow-up etching technics to avoid medium layer, and then etch media layer forms through hole, and filler metal layer forms interconnection layer in through hole.
The deposition method of above-mentioned mask mainly contains chemical vapour deposition or sputtering etc.Wherein, plasma reinforced chemical vapour deposition method (PECVD) has that depositing temperature is low, sedimentation rate is fast and the advantage such as quality of forming film is good, becomes one of the most frequently used mask deposition method.The method is when opening plasma generator, utilizes plasma chemistry activity very strong, is easy to the feature reacted, on a semiconductor substrate formation of deposits mask.At present, the step of plasma reinforced chemical vapour deposition method deposition mask is adopted to generally include: step S1, passes into question response gas to reaction chamber, and open plasma generator, with deposition mask on a semiconductor substrate; Step S2, stops passing into question response gas, and closes plasma generator, to form the uniform one deck mask of thickness; Repeat above-mentioned steps S1 and S2 many times to form required mask.
In the process of above-mentioned employing PECVD deposition mask, need to adopt Multiple depositions to form the uniform mask of thickness, and each deposition step all has the step opening and closing plasma generator.Because isoionic supply is the precondition that deposition reaction is carried out, the deposition process after therefore closing plasma generator in above-mentioned deposition step can stop suddenly.But, the mask surface now formed in reaction chamber also has the chemical bond group of a lot of question response gas, thus form nucleation centre in mask surface.In follow-up deposition step, the sedimentation rate on nucleation centre can higher than the sedimentation rate on other positions, thus forms the defects such as protruding in the mask of formation of deposits, so reduce form the performance of semiconducter device.
Summary of the invention
The application aims to provide the lithographic method of a kind of deposition method of mask, mask and semiconducter device, to reduce the defect produced in the deposition process of mask.
This application provides a kind of deposition method of mask, comprise the following steps: deposition step, pass into question response gas to reaction chamber, and open plasma generator, with deposition mask on a semiconductor substrate; And plasma treatment step, stop passing into question response gas, under plasma generator stays open state, reaction chamber of finding time, passes into nonreactive gas to carry out plasma treatment to mask; Repeat deposition step and plasma treatment step repeatedly to form required mask.
Further, in above-mentioned deposition method repeated deposition step and plasma treatment step 4 times to form required mask.
Further, in the plasma treatment step of above-mentioned deposition method reaction chamber internal pressure lower than deposition step in reaction chamber internal pressure.
Further, in the deposition step of above-mentioned deposition method, reaction chamber internal pressure is 1 ~ 15torr, and in plasma treatment step, reaction chamber internal pressure is 1 ~ 3torr.
Further, in the plasma treatment step of above-mentioned deposition method, the treatment time is no less than 1 second, is preferably 1 ~ 15 second.
Further, in the deposition step of above-mentioned deposition method, the time of deposition mask is 1 ~ 10 second, is preferably 1 ~ 3 second.
Further, in above-mentioned deposition method, mask is silicon-containing film.
Further, in above-mentioned deposition method, silicon-containing film is SiO
2, question response gas comprises silicon precursor and oxygen; Silicon-containing film is SiN, and question response gas comprises silicon precursor and ammonia; Silicon-containing film is SiON, and question response gas comprises silicon precursor, ammonia and oxygen.
Further, in above-mentioned deposition method, silicon precursor is selected from silane, trimethyl silane or tetramethylsilane.
Further, in above-mentioned deposition method, nonreactive gas is selected from He, N
2and N
2one or more in O.
Present invention also provides a kind of mask, this mask is made by the deposition method of the above-mentioned mask of the application.
Present invention also provides a kind of lithographic method of semiconducter device, be included on device to be etched and form pattern mask, and according to the step of the device to be etched of pattern etching in mask, the step wherein forming pattern mask structure comprises the step of the deposition method making mask adopting above-mentioned mask.
The technical scheme that application the application provides, after each deposition step, under being in open mode at maintenance plasma generator, gas in reaction chamber will be replaced by nonreactive gas, to stop deposition reaction, the chemical bond that this process avoids residual question response gas in formed mask surface is rolled into a ball and the nucleation centre of formation, thus decrease due to the defect that the closedown of plasma generator causes in mask, and then improve the quality of formed mask.Simultaneously, by adopting nonreactive gas, plasma treatment is carried out to mask and can etch the chemical residue key group decomposed in mask surface, thus the nucleation centre that the chemical bond group further reducing residual question response gas in formed mask surface is formed, and then further increase the quality of formed mask.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the deposition method of the mask that the application's embodiment provides.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.The application is described in detail below with reference to embodiment.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
As what introduce in background technology, defect can be produced in the mask when adopting PECVD deposition mask, so reduce form the performance of semiconducter device.Present inventor studies for the problems referred to above, proposes a kind of deposition method of mask.As shown in Figure 1, this deposition method comprises the following steps: deposition step, passes into question response gas, and open plasma generator to reaction chamber, with deposition mask on a semiconductor substrate; And plasma treatment step, stop passing into question response gas, under plasma generator stays open state, reaction chamber of finding time, passes into nonreactive gas to carry out plasma treatment to mask; Repeat deposition step and plasma treatment step repeatedly to form required mask.In actually operating, above-mentioned plasma generator is preferably radio frequency generators.
Aforesaid method is by after each deposition step, under maintenance plasma generator is in open mode, gas in reaction chamber is replaced by nonreactive gas, to stop deposition reaction, the chemical bond that this process avoids residual question response gas in formed mask surface is rolled into a ball and the nucleation centre of formation, thus to decrease in mask due to the defect that the closedown of plasma generator causes, improve the quality of formed mask.Meanwhile, by adopting nonreactive gas, plasma treatment is carried out to mask and can etch the chemical residue key group decomposed in mask surface, thus further reduce the formation of nucleation centre, and then further increase the quality of formed mask.
The multiplicity of above-mentioned deposition step and plasma treatment step can set according to the thickness requirements of mask.In a preferred embodiment, repeated deposition step and plasma treatment step 3 to 8 times are to form required film, and preferably, repeated deposition step and plasma treatment step 4 times are to form required film.Now, the thickness of the mask of formation of deposits is even, is conducive to the carrying out of subsequent process steps, so improve form the quality of mask.
In above-mentioned plasma treatment step, reaction chamber internal pressure adopts Conventional process parameters.In a preferred embodiment, in above-mentioned plasma treatment step reaction chamber internal pressure lower than reaction chamber internal pressure in deposition step.Now, the plasma body produced is more stable, is conducive to reducing further institute and forms defect in mask, and the quality of further raising mask.More preferably, in plasma treatment step, reaction chamber internal pressure is 1 ~ 3torr, and in deposition step, reaction chamber internal pressure is 1 ~ 15torr.The defect in the mask of formation can be reduced under these conditions as far as possible, thus improve the quality of mask further.
In above-mentioned plasma treatment step, nonreactive gas adopts the gas do not reacted with mask.In a preferred embodiment, nonreactive gas is selected from He, N
2and N
2one or more in O.Now, the plasma body formed is more uniform and stable, is conducive to improving institute and forms the quality of mask, so raising form the quality of mask.
In above-mentioned plasma treatment step, the time of plasma treatment adopts Conventional Time scope.In a preferred embodiment, plasma processing time is no less than 1 second, is more preferably 1 ~ 15 second.Plasma processing time is controlled in above-mentioned time range, the defect in the mask of formation can be reduced as far as possible, thus improve the quality of mask further.Meanwhile, in above-mentioned deposition step, the time of deposition mask also can set according to the Common deposition time.In a preferred embodiment, the time of deposition mask is 1 ~ 10 second, is more preferably 1 ~ 15 second.The time controling of deposition mask can be formed the uniform mask of thickness in above-mentioned time range, thus be conducive to the carrying out of subsequent process steps, so improve form the quality of mask.
The deposition method of the above-mentioned mask that the application provides is applicable to any mask material.Wherein, especially preferably mask is silicon-containing film.Above-mentioned silicon-containing film can be SiO
2, SiN or SiON.When silicon-containing film is SiO
2, question response gas comprises silicon precursor and oxygen; When silicon-containing film is SiN, question response gas comprises silicon precursor and ammonia; When silicon-containing film is SiON, question response gas comprises silicon precursor, ammonia and oxygen.Above-mentioned silicon precursor can be silicon precursor common in this area, and preferably, above-mentioned silicon precursor is selected from silane, trimethyl silane or tetramethylsilane.
With SiO
2mask is example, adopts above-mentioned deposition method to form SiO
2during mask, in a kind of optional embodiment, comprise the following steps: deposition step, pass into silicon precursor and oxygen to reaction chamber, and open plasma generator, to deposit SiO on a semiconductor substrate
2mask, wherein the flow of silicon precursor is 50 ~ 2000sccm, and the flow of oxygen is 100 ~ 3000sccm, and radio frequency power is 10 ~ 100W, and reaction chamber internal pressure is 1 ~ 15torr, and depositing time is 1 ~ 10s; Plasma treatment step, stop passing into above-mentioned silicon precursor and oxygen, under plasma generator stays open state, reaction chamber of finding time, then passes into He and N
2o is to carry out plasma treatment to mask, and wherein the flow of He is 300sccm, N
2the flow of O is 300sccm, and reaction chamber internal pressure is 1 ~ 3torr, and the treatment time is 1 ~ 15s; Repeat deposition step and plasma treatment step four times to form required SiO
2mask, form SiO
2the thickness of mask is 10 ~ 200nm.
Present invention also provides a kind of mask, the mask deposition method that this mask is provided by the application is made.The defect caused due to the closedown of plasma generator in this mask is reduced, and then has good mask quality.
Present invention also provides a kind of lithographic method of semiconducter device, be included on device to be etched and form pattern mask, and according to the step of the device to be etched of pattern etching in mask, wherein, the step forming pattern mask comprises the step of the deposition method making mask adopting above-mentioned mask.The defect caused due to the closedown of plasma generator in this mask is reduced, and then improves the quality of formed mask, and improves the performance of formed semiconducter device.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to embodiment set forth herein.Should be understood that, provide these embodiments be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
The deposition method of the mask that the application provides is further illustrated below in conjunction with embodiment.
Embodiment 1
Present embodiments provide a kind of SiO
2the deposition method of mask, comprises the following steps:
Deposition step: pass into silane and oxygen to reaction chamber, and open radio frequency generators, to deposit SiO on a semiconductor substrate
2mask, wherein the flow of silane is 1000sccm, and the flow of oxygen is 1500sccm, and radio frequency power is 100W, and reaction chamber internal pressure is 1torr, and depositing time is 10s;
Plasma treatment step: stop passing into above-mentioned silane and ammonia, under radio frequency generators stays open state, reaction chamber of finding time, then passes into He and N
2o is with to SiO
2mask carries out plasma treatment, and wherein the flow of He is 300sccm, N
2the flow of O is 300sccm, and reaction chamber internal pressure is 1torr, and the treatment time is 15s;
Repeat deposition step and plasma treatment step four times to form the SiO that thickness is 200nm
2mask.
Embodiment 2
Present embodiments provide a kind of deposition method of SiN mask, comprise the following steps:
Deposition step: pass into silane and ammonia to reaction chamber, and open radio frequency generators, to deposit SiN mask on a semiconductor substrate, wherein the flow of silane is 1000sccm, and the flow of ammonia is 1500sccm, and radio frequency power is 100W, reaction chamber internal pressure is 15torr, and depositing time is 1s;
Plasma treatment step: stop passing into above-mentioned silane and ammonia, under radio frequency generators stays open state, reaction chamber of finding time, then passes into He and N
2o is to carry out plasma treatment to SiN mask, and wherein the flow of He is 300sccm, N
2the flow of O is 300sccm, and reaction chamber internal pressure is 3torr, and the treatment time is 1s;
Repeat deposition step and plasma treatment step four times to form the SiN mask that thickness is 100nm.
Embodiment 3
Present embodiments provide a kind of deposition method of SiON mask, comprise the following steps:
Deposition step: pass into silane, ammonia and oxygen to reaction chamber, and open radio frequency generators, to deposit SiON mask on a semiconductor substrate, wherein the flow of silane is 1000sccm, the flow of ammonia is 1000sccm, and the flow of oxygen is 1000sccm, and radio frequency power is 100W, reaction chamber internal pressure is 5torr, and depositing time is 3s;
Plasma treatment step: stop passing into above-mentioned silane, ammonia and oxygen, under radio frequency generators stays open state, reaction chamber of finding time, then passes into He and N
2o is to carry out plasma treatment to SiON mask, and wherein the flow of He is 300sccm, N
2the flow of O is 300sccm, and reaction chamber internal pressure is 2orr, and the treatment time is 5s;
Repeat deposition step and plasma treatment step four times to form the SiON mask that thickness is 160nm.
Embodiment 4
Present embodiments provide a kind of SiO
2the deposition method of mask, comprises the following steps:
Deposition step: pass into silane and oxygen to reaction chamber, and open radio frequency generators, to deposit SiO on a semiconductor substrate
2mask, wherein the flow of silane is 1000sccm, and the flow of oxygen is 1500sccm, and radio frequency power is 100W, and reaction chamber internal pressure is 17torr, and depositing time is 12s;
Plasma treatment step: stop passing into above-mentioned silane and ammonia, under radio frequency generators stays open state, reaction chamber of finding time, then passes into He and N
2o is with to SiO
2mask carries out plasma treatment, and wherein the flow of He is 300sccm, N
2the flow of O is 300sccm, and reaction chamber internal pressure is 5torr, and the treatment time is 18s;
Repeat deposition step and plasma treatment step six times to form the SiO that thickness is 230nm
2mask.
Comparative example 1
This comparative example provides a kind of SiO
2the deposition method of mask, comprises the following steps:
Pass into silane and oxygen to reaction chamber, and open radio frequency generators, to deposit SiO on a semiconductor substrate
2mask, wherein the flow of silane is 1000sccm, and the flow of ammonia is 1500sccm, and radio frequency power is 100W, and reaction chamber internal pressure is 1torr, and depositing time is 10s;
Stop passing into above-mentioned silane and ammonia, close radio frequency generators, the time of closing radio frequency generators is 1 ~ 15s;
Repeat deposition step and plasma treatment step four times to form the SiO that thickness is 160nm
2mask.
Test: by SEM to observe in embodiment 1 to 4 and comparative example 1 must with mask in defect, and calculate its defect concentration, correlated results asks for an interview table 1.
Table 1
| Defect concentration (individual/cm 2） | |
| Embodiment 1 | 1.5E+2 |
| Embodiment 2 | 1.7E+2 |
| Embodiment 3 | 1.1E+2 |
| Embodiment 4 | 2.0E+2 |
| Comparative example 1 | 2.6E+4 |
As can be seen from Table 1, the defect concentration in comparative example 1 in mask surface is 2.6E+4/cm
2, and the defect concentration in embodiment 1 to 4 in mask surface is 1.1E+2 ~ 2.0E+2/cm
2.As can be seen from above-mentioned data analysis, the technical scheme that application the application provides, makes the defect produced in mask obviously reduce, and then improves the quality of mask.
From above description, can find out, the application's the above embodiments achieve following technique effect: by after each deposition step, under maintenance radio frequency generators (plasma generator) is in open mode, gas in reaction chamber will be replaced by nonreactive gas, to stop deposition reaction, the chemical bond that this process avoids residual question response gas in formed mask surface is rolled into a ball and the nucleation centre of formation, thus decrease in mask due to defect that the closedown of radio frequency generators (plasma generator) causes, and then improve the quality of formed mask.Simultaneously, by adopting nonreactive gas, plasma treatment is carried out to mask and can etch the chemical residue key group decomposed in mask surface, thus the nucleation centre that the chemical bond group further reducing residual question response gas in formed mask surface is formed, and then further increase the quality of formed mask.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection domain that all should be included in the application.
Claims (12)
1. a deposition method for mask, is characterized in that, comprises the following steps:
Deposition step: pass into question response gas to reaction chamber, and open plasma generator, to deposit described mask on a semiconductor substrate; And
Plasma treatment step: stop passing into described question response gas, under described plasma generator stays open state, described reaction chamber of finding time, passes into nonreactive gas to carry out plasma treatment to described mask;
Repeat described deposition step and plasma treatment step repeatedly to form required mask.
2. deposition method according to claim 1, is characterized in that, repeats described deposition step and plasma treatment step 4 times to form described required mask.
3. deposition method according to claim 1, is characterized in that, in described plasma treatment step, reaction chamber internal pressure is lower than reaction chamber internal pressure in described deposition step.
4. deposition method according to claim 3, is characterized in that, in described deposition step, reaction chamber internal pressure is 1 ~ 15torr, and in described plasma treatment step, reaction chamber internal pressure is 1 ~ 3torr.
5. deposition method according to claim 1, is characterized in that, in described plasma treatment step, the treatment time is no less than 1 second, is preferably 1 ~ 15 second.
6. deposition method according to claim 5, is characterized in that, in described deposition step, the time of deposition mask is 1 ~ 10 second, is preferably 1 ~ 3 second.
7. deposition method according to claim 1, is characterized in that, described mask is silicon-containing film.
8. deposition method according to claim 7, is characterized in that,
Described silicon-containing film is SiO
2, described question response gas comprises silicon precursor and oxygen;
Described silicon-containing film is SiN, and described question response gas comprises silicon precursor and ammonia;
Described silicon-containing film is SiON, and described question response gas comprises silicon precursor, ammonia and oxygen.
9. deposition method according to claim 8, is characterized in that, described silicon precursor is selected from silane, trimethyl silane or tetramethylsilane.
10. deposition method according to claim 1, is characterized in that, described nonreactive gas is selected from He, N
2and N
2one or more in O.
11. 1 kinds of masks, is characterized in that, the deposition method of the mask of described mask according to any one of claim 1 to 10 is made.
The lithographic method of 12. 1 kinds of semiconducter device, be included on device to be etched and form pattern mask, and according to the step of pattern etching device to be etched in described mask, it is characterized in that, the step forming described pattern mask comprises the step of the deposition method making mask of the mask adopted according to any one of claim 1 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410127676.7A CN104947085B (en) | 2014-03-31 | 2014-03-31 | The lithographic method of the deposition process of mask, mask and semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410127676.7A CN104947085B (en) | 2014-03-31 | 2014-03-31 | The lithographic method of the deposition process of mask, mask and semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104947085A true CN104947085A (en) | 2015-09-30 |
| CN104947085B CN104947085B (en) | 2017-12-19 |
Family
ID=54162135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410127676.7A Active CN104947085B (en) | 2014-03-31 | 2014-03-31 | The lithographic method of the deposition process of mask, mask and semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104947085B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908902A (en) * | 2021-02-10 | 2021-06-04 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1186685A2 (en) * | 2000-09-08 | 2002-03-13 | Applied Materials, Inc. | Method for forming silicon carbide films |
| CN1723741A (en) * | 2002-12-12 | 2006-01-18 | 株式会社半导体能源研究所 | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
| CN102097364A (en) * | 2009-12-04 | 2011-06-15 | 诺发系统有限公司 | Hardmask materials |
-
2014
- 2014-03-31 CN CN201410127676.7A patent/CN104947085B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1186685A2 (en) * | 2000-09-08 | 2002-03-13 | Applied Materials, Inc. | Method for forming silicon carbide films |
| CN1723741A (en) * | 2002-12-12 | 2006-01-18 | 株式会社半导体能源研究所 | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
| CN102097364A (en) * | 2009-12-04 | 2011-06-15 | 诺发系统有限公司 | Hardmask materials |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908902A (en) * | 2021-02-10 | 2021-06-04 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
| CN112908902B (en) * | 2021-02-10 | 2024-04-09 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104947085B (en) | 2017-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101759157B1 (en) | Film-forming method for forming silicon oxide film | |
| US9240320B1 (en) | Methods of depositing smooth and conformal ashable hard mask films | |
| EP2657363B1 (en) | Method of depositing silicon dioxide films | |
| TWI737612B (en) | Deposition methods for uniform and conformal hybrid titanium oxide films | |
| KR20170048545A (en) | Nanocrystalline diamond carbon film for 3d nand hardmask application | |
| KR20140002616A (en) | Methods for forming a hydrogen free silicon containing dielectric film | |
| US9382625B2 (en) | Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition | |
| JP2021514539A (en) | Air gap formation process | |
| CN109728087B (en) | Method for preparing low-ohmic contact GaN-based HEMT based on nanosphere mask | |
| JP2012138492A (en) | Method for forming oxide film on carbon film and film forming device | |
| CN104947085A (en) | Deposition method of mask, mask and etching method of semiconductor device | |
| CN109494150B (en) | Manufacturing method of silicon carbide high-temperature annealing surface protection and silicon carbide power device | |
| WO2013064025A1 (en) | Method for improving gate photo-etching key size uniformity on wafer | |
| CN102820219A (en) | Forming method of low-temperature silica film | |
| CN102832119A (en) | Method for forming low temperature silicon dioxide film | |
| JP7474700B2 (en) | Systems and methods for forming metal hardmasks in device manufacturing - Patents.com | |
| US7026226B1 (en) | Method of hydrogenating a poly-silicon layer | |
| US8980742B2 (en) | Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same | |
| CN111564365A (en) | Method for depositing film, application of method and method for forming semiconductor active region | |
| CN103255388B (en) | Plasma chemical vapor deposition method of phosphosilicate glass film | |
| US11651960B2 (en) | Method for forming amorphous silicon thin film, method for manufacturing semiconductor device including same, and semiconductor manufactured thereby | |
| US20240087881A1 (en) | Systems and methods for depositing low-k dielectric films | |
| CN102623329B (en) | Method for forming front metal dielectric layer | |
| CN102610512B (en) | Method for forming front metal dielectric layer | |
| CN115198248A (en) | Method for improving surface roughness of SiO thin film and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |