CN104934503B - A kind of preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide - Google Patents
A kind of preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide Download PDFInfo
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- CN104934503B CN104934503B CN201510330755.2A CN201510330755A CN104934503B CN 104934503 B CN104934503 B CN 104934503B CN 201510330755 A CN201510330755 A CN 201510330755A CN 104934503 B CN104934503 B CN 104934503B
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- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 title claims abstract description 42
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000031700 light absorption Effects 0.000 title claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000007787 solid Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 238000001291 vacuum drying Methods 0.000 claims abstract description 7
- 230000031709 bromination Effects 0.000 claims abstract description 5
- 238000005893 bromination reaction Methods 0.000 claims abstract description 5
- 239000002904 solvent Substances 0.000 claims abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 210000001367 artery Anatomy 0.000 claims description 4
- HRHBQGBPZWNGHV-UHFFFAOYSA-N azane;bromomethane Chemical compound N.BrC HRHBQGBPZWNGHV-UHFFFAOYSA-N 0.000 claims description 4
- 210000003462 vein Anatomy 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000014759 maintenance of location Effects 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000002411 thermogravimetry Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- -1 amine lead bromide Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A kind of preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide, solid methyl ammonium bromide and solid brominated Asia lead are mixed, it is added to N, in N solvent dimethylformamide, stir, obtain reaction solution, reaction solution is poured in container, after applying pulse electromagnetic field carries out processing reaction solution, Deca is on the electro-conductive glass substrate cleaning up, carry out low speed spin coating and high speed spin coating respectively, form the perovskite thin film that a layer thickness is 500nm～800nm, it is then placed in vacuum drying oven, annealing, obtain methyl amine bromination thin film lead.Advantage is：Preparation process is simple, preparation cost is cheap, processed using pulse electromagnetic field, the degree of crystallinity of product can be improved, and greatly shorten the temperature retention time of annealing, the temperature retention time of annealing is only provided without the 1/6 of pulse electromagnetic field process, thus shortening the production cycle of product, energy saving, is conducive to industrialized production.
Description
Technical field
The invention belongs to solar cell material preparation field, it is related to a kind of high-crystallinity perovskite solaode and absorbs
The preparation method of layer material methyl amine lead bromide, more particularly to one kind are prepared highly crystalline using pulse electromagnetic field assisted solution method
The method of degree perovskite solar battery obsorbing layer material methyl amine lead bromide.
Background technology
With lack of energy and ecological deterioration, people are badly in need of finding a kind of Novel clean energy of alternative traditional fossil energy
Source, solar energy has sustainability and the advantage such as pollution-free, is the important composition portion of countries in the world sustainable development source strategy
Point, solaode is the Main Means currently with solar energy.How solaode is with the monocrystal silicon of the second filial generation or many at present
Based on crystal silicon solar batteries, there is long the production cycle, high cost in this battery, there is energy consumption relatively in crystal silicon preparation process simultaneously
The problems such as height and environmental pollution.Perovskite solaode is a kind of new solaode, and this battery principle is different from biography
The crystal silicon based on pn-junction of system and hull cell, have the advantages that high efficiency, low cost, simply prepare, simultaneously its battery efficiency
Constantly fast lifting, is promoted to the perovskite sun in 2015 by the battery efficiency of perovskite solaode in 2009 for 3.8%
The battery efficiency of energy battery is 20.2%, and perovskite solaode is the extremely potential novel solar battery of one kind.
Organic inorganic hybridization perovskite material is the important component part of perovskite solaode, and the light serving as battery is inhaled
Receive layer segment, there is bipolarity (electronics and hole) transfer function.The light absorbing zone of perovskite solaode is generally using tool
There is the methyl amine lead iodide (CH of the perovskite structure of ABX33NH3PbI3) or methyl amine lead bromide (CH3NH3PbBr3), its source
Extensively, low in raw material price flexible battery can be prepared.At present, the method preparing perovskite material mainly has solwution method and common steaming
Send out method, single solwution method be difficult to obtain high-crystallinity perovskite absorbed layer, though coevaporation method be obtained in that highly crystalline
The perovskite absorbed layer of degree, but preparation cost valency is higher, and problem above causes perovskite battery cannot large-scale commercial applications metaplasia
Produce.Therefore how to obtain the emphasis that inexpensive, highly crystalline quality perovskite absorbed layer is current perovskite solaode research.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of high-crystallinity perovskite solar battery obsorbing layer material first
The preparation method of base amine lead bromide, the method preparation process is simple, preparation cost is cheap, can improve the degree of crystallinity of product.
The technical solution of the present invention is：
A kind of preparation method of high-crystallinity perovskite solar battery obsorbing layer material methyl amine lead bromide, it specifically walks
Suddenly as follows：
(1) clean substrate
Using FTO electro-conductive glass as substrate, after acetone and washes of absolute alcohol, then deionized water is rinsed well, dries
Dry；
(2) prepare reaction solution
By solid methyl ammonium bromide (CH3NH3Br) and solid brominated Asia lead (PbBr2) mixed, it is added to N, N- diformazan
In base Methanamide (DMF) solvent, stir, obtain reaction solution, described methyl bromide ammonium with the mol ratio of protobromide lead is
1:2～2:1, the molal volume of described methyl bromide ammonium and DMF is than for 1:1mol/L～1:2mol/L；
(3) pulse electromagnetic field is processed
The reaction solution that step (2) is prepared is poured in container, applies pulse electromagnetic field and carries out processing reaction solution, applies
Plus burst length 2min～3min, pulse voltage is 500v～700v, and pulse frequency is 3Hz～5Hz；
(4) spin-coating film
By the reaction solution Deca processing through pulse on electro-conductive glass substrate, carry out low speed spin coating respectively and revolve at a high speed
Apply, form the perovskite thin film that a layer thickness is 500nm～800nm, wherein, the revolution of low speed spin coating for 800r/min～
1200r/min, spin-coating time is 20s～30s；The revolution of high speed spin coating is 2500r/min～3500r/min, and spin-coating time is
30s～40s；
(5) make annealing treatment
Liquid film good for spin coating in step (4) is put in vacuum drying oven, is heated to 70 DEG C～80 DEG C, insulation
20min～30min, obtains methyl amine bromination thin film lead.
The thickness of described FTO electro-conductive glass is 3mm～5mm.
During cleaning FTO electro-conductive glass substrate, first it is cleaned by ultrasonic 10min～20min in acetone, more clear in dehydrated alcohol
Wash 10min～20min.
Beneficial effects of the present invention：
(1), degree of crystallinity is had using the methyl amine lead bromide organic-inorganic hybrid material of pulse electromagnetic technology preparation high, pure
Degree is high, the advantage of compactness；Show that the methyl amine lead bromide organic-inorganic after processing through extra pulse is miscellaneous by thermogravimetric analysis data
Change material decomposition temperature and bring up to 381 DEG C from 375 DEG C, UV-visible spectrometer data display extinction width is from 300nm-674nm
Bring up to 300nm-685nm, this material has more preferable stability and absorbing properties, be assembled into perovskite solaode,
Be conducive to improving battery efficiency and stability.
(2), pulse electromagnetic field technology energy consumption is low, system operatio is simple, operating cost is low, occupation area of equipment is little, parameter
Easily adjust, its handled object and surrounding are not polluted, be a kind of processing method of cleaner environmental protection；Using
After pulse electromagnetic field is processed, greatly shorten the temperature retention time of annealing, the temperature retention time of annealing is only provided without
The 1/6 of pulse electromagnetic field process, thus shortening the production cycle of product, energy saving, is conducive to industrialized production.
Brief description
Fig. 1 is methyl amine lead bromide (CH prepared by the present invention (corresponding embodiment 1～embodiment 3)3NH3PbBr3) hydridization material
The XRD spectrum of material；
Fig. 2 is the methyl amine lead bromide (CH being prepared using common liquid phase method (corresponding comparative example 1)3NH3PbBr3) hydridization
The XRD spectrum of material.
Specific embodiment
Embodiment 1
(1) clean substrate
FTO electro-conductive glass using thickness as 3mm, as substrate, is first cleaned by ultrasonic 10min in acetone, then in dehydrated alcohol
Middle cleaning 10min, last deionized water is rinsed well, dries；
(2) prepare reaction solution
Take the solid methyl ammonium bromide (CH of 0.01mol3NH3Br) and 0.02mol solid brominated Asia lead (PbBr2), add
DMF (DMF) solution of 20mL, stirs and all dissolves to pressed powder, obtain reaction solution；
(3) pulse electromagnetic field is processed
The reaction solution that step (2) is prepared is poured in beaker, and it is 500v that reaction solution is applied pulse voltage, electric arteries and veins
Rush the pulse electromagnetic field that frequency is 3Hz and process 3min；
(4) spin-coating film
By the reaction solution Deca processing through pulse on electro-conductive glass substrate, carried out respectively with sol evenning machine low speed spin coating and
High speed spin coating, forms the perovskite thin film that a layer thickness is 500nm～600nm, and wherein, the revolution of low speed spin coating is 800r/
Min, spin-coating time is 30s；The revolution of high speed spin coating is 2500r/min, and spin-coating time is 40s；
(5) make annealing treatment
Liquid film good for spin coating in step (4) is put in vacuum drying oven, is heated to 70 DEG C, be incubated 20min, obtain
Methyl amine lead bromide (CH3NH3PbBr3) thin film, its XRD spectrum as shown in figure 1, as seen from the figure hence it is evident that find diffraction peak intensity relatively
Height, the diffraction maximum relative intensity of wherein main diffraction surfaces (110) and (220) is about 11000～14000；Being calculated by XRD can
Know, its crystallite dimension is about 96nm；By thermogravimetric analysiss, its decomposition temperature is 381 DEG C；Through UV-visible spectrometer detection, its
Show that extinction width is 300nm-685nm.
Embodiment 2
(1) clean substrate
FTO electro-conductive glass using thickness as 4mm, as substrate, is first cleaned by ultrasonic 15min in acetone, then in dehydrated alcohol
Middle cleaning 15min, last deionized water is rinsed well, dries；
(2) prepare reaction solution
Take the solid methyl ammonium bromide (CH of 0.01mol3NH3Br) and 0.01mol solid brominated Asia lead (PbBr2), add
DMF (DMF) solution of 15mL, stirs and all dissolves to pressed powder, obtain reaction solution；
(3) pulse electromagnetic field is processed
The reaction solution that step (2) is prepared is poured in beaker, and it is 600v that reaction solution is applied pulse voltage, electric arteries and veins
Rush the pulse electromagnetic field that frequency is 4Hz and process 150s；
(4) spin-coating film
By the reaction solution Deca processing through pulse on electro-conductive glass substrate, carried out respectively with sol evenning machine low speed spin coating and
High speed spin coating, forms the perovskite thin film that a layer thickness is 600nm～700nm, and wherein, the revolution of low speed spin coating is 1200r/
Min, spin-coating time is 20s；The revolution of high speed spin coating is 3500r/min, and spin-coating time is 30s；
(5) make annealing treatment
Liquid film good for spin coating in step (4) is put in vacuum drying oven, is heated to 75 DEG C, be incubated 25min, obtain
Methyl amine bromination thin film lead, its XRD spectrum is as shown in Figure 1；By thermogravimetric analysiss, its decomposition temperature is 381 DEG C；Through UV, visible light
Spectrometer, it shows that extinction width is 300nm-685nm.
Embodiment 3
(1) clean substrate
FTO electro-conductive glass using thickness as 5mm, as substrate, is first cleaned by ultrasonic 20min in acetone, then in dehydrated alcohol
Middle cleaning 20min, last deionized water is rinsed well, dries；
(2) prepare reaction solution
Take the solid methyl ammonium bromide (CH of 0.02mol3NH3Br) and 0.01mol solid brominated Asia lead (PbBr2), add
DMF (DMF) solution of 20mL, stirs and all dissolves to pressed powder, obtain reaction solution；
(3) pulse electromagnetic field is processed
The reaction solution that step (2) is prepared is poured in beaker, and it is 700v that reaction solution is applied pulse voltage, electric arteries and veins
Rush the pulse electromagnetic field that frequency is 5Hz and process 2min；
(4) spin-coating film
By the reaction solution Deca processing through pulse on electro-conductive glass substrate, carried out respectively with sol evenning machine low speed spin coating and
High speed spin coating, forms the perovskite thin film that a layer thickness is 700nm～800nm, and wherein, the revolution of low speed spin coating is 1000r/
Min, spin-coating time is 25s；The revolution of high speed spin coating is 3000r/min, and spin-coating time is 35s；
(5) make annealing treatment
Liquid film good for spin coating in step (4) is put in vacuum drying oven, is heated to 80 DEG C, be incubated 30min, obtain
Methyl amine bromination thin film lead, its XRD spectrum is as shown in Figure 1；By thermogravimetric analysiss, its decomposition temperature is 381 DEG C；Through UV, visible light
Spectrometer, it shows that extinction width is 300nm-685nm.
Comparative example 1
(1) clean substrate
FTO electro-conductive glass using thickness as 4mm, as substrate, is first cleaned by ultrasonic 15min in acetone, then in dehydrated alcohol
Middle cleaning 15min, last deionized water is rinsed well, dries；
(2) prepare reaction solution
Take the solid methyl ammonium bromide (CH of 0.01mol3NH3Br) and 0.01mol solid brominated Asia lead (PbBr2), add
DMF (DMF) solution of 15mL, stirs and all dissolves to pressed powder, obtain reaction solution；
(3) spin-coating film
By reaction solution Deca on electro-conductive glass substrate, carry out low speed spin coating and high speed spin coating, shape respectively with sol evenning machine
Become the perovskite thin film that a layer thickness is 700nm～800nm, wherein, the revolution of low speed spin coating is 1000r/min, spin-coating time
For 25s；The revolution of high speed spin coating is 3000r/min, and spin-coating time is 35s；
(4) make annealing treatment
Liquid film good for spin coating in step (3) is put in vacuum drying oven, is heated to 70 DEG C, be incubated 2h, obtain first
Base amine lead bromide (CH3NH3PbBr3) thin film.As shown in Fig. 2 as seen from the figure, the diffraction peak intensity of this product is relatively for its XRD spectrum
Adopt in Fig. 1 pulse process the product obtaining diffraction peak intensity relatively low, the spreading out of wherein main diffraction surfaces (110) and (220)
Penetrate peak relative intensity and be about 3800～5000；Calculated by XRD, its crystallite dimension is about 53nm；By thermogravimetric analysiss, its
Decomposition temperature is 375 DEG C；Through UV-visible spectrometer detection, it shows that extinction width is 300nm-674nm.
Can be obtained by Fig. 1 and Fig. 2 contrast, the crystallite dimension of the embodiment of the present invention 1～embodiment 3 product is much larger than commonly
The crystallite dimension of product prepared by liquid phase method (comparative example 1), thus can know, using pulse electromagnetic field technology preparation product its
Degree of crystallinity is greatly improved.
These are only the specific embodiment of the present invention, be not limited to the present invention, for those skilled in the art
For member, the present invention can have various modifications and variations.All any modifications within the spirit and principles in the present invention, made,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (3)
1. a kind of preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide, is characterized in that：
Comprise the following steps that：
(1) clean substrate
Using FTO electro-conductive glass as substrate, after acetone and washes of absolute alcohol, then deionized water is rinsed well, dries；
(2) prepare reaction solution
Solid methyl ammonium bromide and solid brominated Asia lead are mixed, is added in DMF solvent, stirring
Uniformly, obtain reaction solution, described methyl bromide ammonium is 1 with the mol ratio of protobromide lead:2～2:1, described methyl bromide ammonium with
The molal volume of N,N-dimethylformamide is than for 1:1mol/L～1:2mol/L；
(3) pulse electromagnetic field is processed
The reaction solution that step (2) is prepared is poured in container, applies pulse electromagnetic field and carries out processing reaction solution, applies arteries and veins
Rush time 2min～3min, pulse voltage is 500v～700v, pulse frequency is 3Hz～5Hz；
(4) spin-coating film
By the reaction solution Deca processing through pulse on electro-conductive glass substrate, carry out low speed spin coating and high speed spin coating, shape respectively
Become the perovskite thin film that a layer thickness is 500nm～800nm, wherein, the revolution of low speed spin coating is 800r/min～1200r/
Min, spin-coating time is 20s～30s；The revolution of high speed spin coating be 2500r/min～3500r/min, spin-coating time be 30s～
40s；
(5) make annealing treatment
Liquid film good for spin coating in step (4) is put in vacuum drying oven, is heated to 70 DEG C～80 DEG C, insulation 20min～
30min, obtains methyl amine bromination thin film lead.
2. the preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide according to claim 1,
It is characterized in that：The thickness of described FTO electro-conductive glass is 3mm～5mm.
3. the preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide according to claim 1,
It is characterized in that：During cleaning FTO electro-conductive glass substrate, first it is cleaned by ultrasonic 10min～20min in acetone, then in dehydrated alcohol
Cleaning 10min～20min.
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| CN107464883B (en) * | 2015-12-21 | 2020-05-19 | 西安穿越光电科技有限公司 | Solar cell |
| GB201604050D0 (en) * | 2016-03-09 | 2016-04-20 | Isis Innovation | A/M/X material production process with alkylamine |
| US10840030B2 (en) | 2016-06-30 | 2020-11-17 | The University Of Hong Kong | Organolead halide perovskite film and the method of making the same |
| CN107134531B (en) * | 2017-05-11 | 2019-06-28 | 陕西师范大学 | A kind of increase perovskite CH3NH3PbI3Crystal grain is to improve the method for film crystalline quality |
| CN107482121B (en) * | 2017-08-01 | 2019-09-17 | 厦门大学 | A kind of preparation method of the perovskite thin film based on magnetic field regulation |
| CN109037459B (en) * | 2018-08-03 | 2022-03-11 | 辽宁工业大学 | Preparation method of high-purity perovskite film |
| CN109449295B (en) * | 2018-10-30 | 2023-09-22 | 麦耀华 | Method for preparing perovskite film based on two-step printing |
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| CN101091899A (en) * | 2007-04-28 | 2007-12-26 | 王建中 | Method for catalyzing chemical reaction through pulse electromagnetic field |
| CN103956394A (en) * | 2014-05-13 | 2014-07-30 | 国家纳米科学中心 | Method for improving performance of light absorption layer of perovskite solar cell |
| CN104269452A (en) * | 2014-10-11 | 2015-01-07 | 中国科学院半导体研究所 | Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof |
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| CN101091899A (en) * | 2007-04-28 | 2007-12-26 | 王建中 | Method for catalyzing chemical reaction through pulse electromagnetic field |
| CN103956394A (en) * | 2014-05-13 | 2014-07-30 | 国家纳米科学中心 | Method for improving performance of light absorption layer of perovskite solar cell |
| CN104269452A (en) * | 2014-10-11 | 2015-01-07 | 中国科学院半导体研究所 | Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof |
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