CN104934361B - The preparation method of shallow trench and the preparation method of memory device - Google Patents
The preparation method of shallow trench and the preparation method of memory device Download PDFInfo
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- CN104934361B CN104934361B CN201410103919.3A CN201410103919A CN104934361B CN 104934361 B CN104934361 B CN 104934361B CN 201410103919 A CN201410103919 A CN 201410103919A CN 104934361 B CN104934361 B CN 104934361B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000010276 construction Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
This application provides a kind of preparation method of shallow trench and the preparation method of memory device.The preparation method of wherein shallow trench includes：Substrate is divided into first area and second area；First is formed on the position of second area shallow trench to be formed can sacrificial material layer；And simultaneously to first can sacrificial material layer and substrate perform etching, form the first shallow trench in first area, can form the second shallow trench on the position of sacrificial material layer corresponding to first in the second area.The preparation method by second area position relative set first to be etched can sacrificial material layer, make etching second area formed the second shallow trench depth be less than etching first area formed the first shallow trench depth.Simultaneously only by photoetching, a mask alignment, and the shallow trench of different depth is formed by etching the technique of first area and second area, so as to simplify existing process, reduces production cost, and the shallow trench alignment precision formed is improved.
Description
Technical field
The application is related to the manufacture craft of semiconductor integrated circuit, more particularly to a kind of preparation method of shallow trench and storage
The preparation method of device.
Background technology
Different zones on IC chip include the semiconductor devices with difference in functionality, are needed between these devices
It is mutually isolated by shallow trench.Due to the difference of working environment, the depth of the isolated groove in different zones between device has
Institute is different.For example high tension apparatus has higher operating voltage and electric current, in order to prevent producing leakage current between high tension apparatus, lead to
Often need the depth of the isolated groove between increase high tension apparatus so that the depth ratio logic of the isolated groove between high tension apparatus
The depth of isolated groove in circuit region is bigger.
Existing memory generally comprises core cell area and logic circuit area, and device in core cell area
Between isolated groove depth of the depth generally than isolated groove between device in logic circuit area it is high.Existing
Memory manufacturing process in, generally formed not in memory cell array area and logic circuit area in the method for subregion manufacture
With the isolated groove of depth.Namely make respectively the shallow trench isolation of memory cell array area and logic circuit area shallow trench every
From controlling the depth of the isolated groove of two different zones respectively by the difference of etching period, formation has different depth
Isolated groove.
Problems be present in which：, it is necessary to using mask twice, mask pattern point when subregion forms shallow trench isolation
Memory cell array area and logic circuit area are not corresponded to, therefore the cost for making mask is higher, and need by mask twice
Alignment, the shallow trench isolation alignment precision formed are relatively low.
The content of the invention
The application aims to provide a kind of preparation method of shallow trench and the preparation method of memory device, to solve existing partly to lead
The problem of complex process present in body device isolation technique.
On the one hand the application provides a kind of preparation method of shallow trench.The preparation method includes：Substrate is divided into
One region and second area；First is formed on the position of second area shallow trench to be formed can sacrificial material layer；And simultaneously
To first can sacrificial material layer and substrate perform etching, form the first shallow trench in first area, correspond in the second area
First can form the second shallow trench on the position of sacrificial material layer.
Further, in the preparation method of above-mentioned shallow trench, first can sacrificial material layer form substrate in the second area
Surface on.
Further, the preparation method of above-mentioned shallow trench also includes：Can be before sacrificial material layer, in substrate forming first
The upper protective layer formed with the first opening and the second opening, the first opening, which corresponds in first area, to be intended to form the first shallow trench
Position, the second opening, which corresponds in second area, is intended to be formed the position of the second shallow trench；Can sacrificial material layer forming first
The step of in, first can sacrificial material layer be formed in the second opening.
Further, in the preparation method of above-mentioned shallow trench, above-mentioned protective layer is sacrificial material layer or is dielectric layer.
Further, in the preparation method of above-mentioned shallow trench, when protective layer is sacrificial material layer, being formed has first to open
The step of mouth and the protective layer of the second opening, includes：Preparation protective layer is formed on substrate；Pattern is formed on preparation protective layer
The first hard mask layer changed；Etched downwards according to figure in the first hard mask layer, form what is be open with the first opening and second
Protective layer；The first hard mask layer is removed, and remaining protective layer is removed after the first shallow trench and the second shallow trench is formed.
Further, in the preparation method of above-mentioned shallow trench, when protective layer is as dielectric layer, being formed has the first opening
With second opening protective layer the step of include：Preparation protective layer is formed on substrate；Forming second on preparation protective layer can
Sacrificial material layer；In the first hard mask layer that second can form patterning in sacrificial material layer；According to scheming in the first hard mask layer
Shape be sequentially etched downwards second can sacrificial material layer and preparation protective layer, until forming the first opening and the in preparation protective layer
Two openings；Removing the first hard mask layer and remaining second can sacrificial material layer.
Further, in the preparation method of above-mentioned shallow trench, in the second opening formed first can sacrificial material layer step
Suddenly include：Forming first in the first opening and the second opening of protective layer simultaneously can sacrificial material layer；Positioned at the second opening
In first can form the second hard mask layer in sacrificial material layer；First removed in the first opening can sacrificial material layer；
Remove the second hard mask layer.
Further, in the preparation method of above-mentioned shallow trench, can also it include before sacrificial material layer forming first：
The step of position in one region corresponding to the first shallow trench forms the first pre- shallow trench, and correspond to the in the second area
The positions of two shallow trench forms the step of the second pre- shallow trench, first can sacrificial material layer form inwall in the second pre- shallow trench
On.
Further, also include in the preparation method of above-mentioned shallow trench：Can be before sacrificial material layer, on substrate being formed
The protective layer with the first opening and the second opening is formed, the first opening communicates with the first pre- shallow trench, the second opening and second
Pre- shallow trench communicates.
Further, in the preparation method of above-mentioned shallow trench, above-mentioned protective layer is sacrificial material layer or is dielectric layer.
Further, in the preparation method of above-mentioned shallow trench, protective layer is sacrificial material layer, formed have first opening and
The protective layer of second opening, and include in the step of first pre- shallow trench and the second pre- shallow trench of formation on substrate：In substrate
It is upper to form preparation protective layer；The first hard mask layer of patterning is formed on preparation protective layer；According to scheming in the first hard mask layer
Shape etches downwards, forms the protective layer with the first opening and the second opening, and forms what is communicated with the first opening on substrate
First pre- shallow trench, and the second pre- shallow trench communicated with the second opening；The first hard mask layer is removed, and is forming first
The remaining protective layer is removed after shallow trench and the second shallow trench.
Further, in the preparation method of above-mentioned shallow trench, when protective layer is dielectric layer, formed have first opening and
The protective layer of second opening, and include in the step of first pre- shallow trench and the second pre- shallow trench of formation on substrate：In substrate
It is upper to form preparation protective layer；Forming second on preparation protective layer can sacrificial material layer；It can be formed second in sacrificial material layer
Patterned first hard mask layer；According to figure in the first hard mask layer, etching second can sacrificial material layer, preparation protection downwards
Layer and substrate, until forming the first opening and the second opening in preparation protective layer, and formed and the first opening phase on substrate
The first logical pre- shallow trench, and the second pre- shallow trench communicated with the second opening；Remove the first hard mask layer and remaining
Two can sacrificial material layer.
Further, in the preparation method of above-mentioned shallow trench, forming first in the second pre- shallow trench can sacrificial material layer
The step of include：First is formed in the first pre- shallow trench and the second pre- shallow trench simultaneously can sacrificial material layer；Positioned at second
First in pre- shallow trench can form the second hard mask layer in sacrificial material layer；Removing first be located in the first pre- shallow trench can
Sacrificial material layer；Remove the second hard mask layer.
Further, in the preparation method of above-mentioned shallow trench, the first shallow trench and the second shallow trench are formed in the substrate
In step, while etched substrate forms the first shallow trench, etching removes first formed on the second pre- shallow trench inwall
Can sacrificial material layer, formed be located at substrate in the second shallow trench；Or while etched substrate forms the first shallow trench, it is right
Formed on the second pre- shallow trench inwall first can sacrificial material layer carry out first time etching, complete the first shallow trench quarter
After erosion, to formed on the second pre- shallow trench inwall first can sacrificial material layer carry out second and etch, formation is located at substrate
In the second shallow trench；Or while etched substrate forms the first shallow trench, sequentially etching is formed in the second pre- shallow trench
On inwall first can sacrificial material layer and positioned at the first substrate that can be below sacrificial material layer, form second be located in substrate
Shallow trench.
Further, in the preparation method of above-mentioned shallow trench, first can the thickness of sacrificial material layer be c, the first shallow trench
And the second depth difference between shallow trench is h, substrate and first can the etch rate ratio of sacrificial material layer be v, and first can be sacrificial
Thickness c=h/v of domestic animal material layer, it is preferably。
Further, in the preparation method of above-mentioned shallow trench, first can sacrificial material layer be oxide skin(coating).
Further, in the preparation method of above-mentioned shallow trench, formed first can the technique of sacrificial material layer be atomic layer deposition
Product or thermal oxidation technology, the temperature of thermal oxidation technology is 300~600 DEG C.
Further, in the preparation method of above-mentioned shallow trench, the in the first opening or the first pre- shallow trench is removed
One can be etched the step of sacrificial material layer using wet processing, and the speed of etching is
Further, in the preparation method of above-mentioned shallow trench, protective layer is sandwich construction, is outwards wrapped successively by substrate surface
Include：SiO2Layer, Si3N4Layer, SiO2Layer；Second can sacrificial material layer there is sandwich construction, outwards wrapped successively by dielectric layer surface
Include：Amorphous carbon layer and silicon oxynitride layer.
The application's further aspect is that provide a kind of preparation method of memory device.The preparation method includes：Having
Have and shallow trench formed on logic region and the substrate of core memory area, and on the substrate between shallow trench make grid,
Source electrode and drain electrode, wherein the method that shallow trench is formed on the substrate with logic region and core memory area carries for the application
The preparation method of the shallow trench of confession.
Using the technical scheme of the application, substrate is divided into first area and second area, and be intended in the second area
Formed shallow trench position formed first can sacrificial material layer, then simultaneously first area and second area are performed etching.It is logical
The position relative set first to be etched crossed in second area can sacrificial material layer so that etching second area is formed second shallow
The depth of groove is less than the depth for the first shallow trench that etching first area is formed.With being formed by multiple photoetching and etching technics
The existing process of different depth shallow trench is compared, the preparation method of shallow trench provided herein only by a photoetching, cover
Film is aligned, and the shallow trench of different depth is formed by etching the technique of first area and second area, so as to simplify
Existing process, reduces production cost, and the shallow trench alignment precision formed is improved.
In addition to objects, features and advantages described above, the application also has other objects, features and advantages.
Below with reference to figure, the application is described in further detail.
Brief description of the drawings
Accompanying drawing forms the part of this specification, for further understanding the application, and accompanying drawing shows that the application's is preferred
Embodiment, and be used for together with specification illustrating the principle of the application.In figure：
Fig. 1 shows the schematic flow sheet of manufacturing method for shallow groove provided herein；
Fig. 2 a are shown in the preparation method for the shallow trench that a kind of embodiment of the application is provided, and divide the substrate into
Matrix cross-sectional view behind one region and second area；
Fig. 2 b show that the matrix after the protective layer with the first opening and the second opening is formed on Fig. 2 a substrate cuts open
Face structural representation,
Fig. 2 b-1 are shown in the preparation method for the shallow trench that a kind of embodiment of the application is provided, in Fig. 2 a substrate
The upper matrix cross-sectional view formed after preparation dielectric layer；
Fig. 2 b-2 are shown forms the second matrix section that can be after sacrificial material layer in preparation dielectric layer shown in Fig. 2 b-1
Structural representation；
Fig. 2 b-3 are shown to be cutd open in the shown in Fig. 2 b-2 second matrix that can be formed in sacrificial material layer after the first hard mask layer
Face structural representation；
Fig. 2 c show that forming the first matrix that can be after sacrificial material layer in the second opening of protective layer shown in Fig. 2 b cuts open
Face structural representation；
Fig. 2 c-1 show that formation first can expendable material in the first opening and the second opening of protective layer shown in Fig. 2 b
Matrix cross-sectional view after layer；
Fig. 2 c-2 show that first of the second opening in protective layer shown in Fig. 2 c-1 can form second in sacrificial material layer
Matrix cross-sectional view after hard mask layer；
Fig. 2 d, which are shown, is forming formation second in the first shallow trench, and second area in middle first area shown in Fig. 2 c
Matrix cross-sectional view after shallow trench；
Fig. 3 a are shown in the preparation method for the shallow trench that a kind of embodiment of the application is provided, and divide the substrate into
Matrix cross-sectional view behind one region and second area；
Fig. 3 b show the matrix after the protective layer with the first opening and the second opening is formed shown in Fig. 3 a on substrate
Cross-sectional view；
Fig. 3 c, which are shown, is forming the protective layer with the first opening and the second opening on substrate shown in Fig. 3 a, in the substrate
Form the first pre- shallow trench and the second pre- shallow trench, and form in the second pre- shallow trench the first matrix that can be after sacrificial material layer
Cross-sectional view；
Fig. 3 c-1 show that formation first can expendable material in the first pre- shallow trench shown in Fig. 3 b and the second pre- shallow trench
Matrix cross-sectional view after layer；
Fig. 3 c-2 show that in the second pre- shallow trench shown in Fig. 3 c-1 first can form second in sacrificial material layer and cover firmly
Matrix cross-sectional view after film layer；
Fig. 3 d, which show to be formed in first area in figure 3 c, forms the second shallow ridges in the first shallow trench, and second area
Matrix cross-sectional view after groove；And
Fig. 4 is shown in the preparation method for the shallow trench that a kind of embodiment of the application is provided, pre- to the second of Fig. 3 b
In shallow trench first can sacrificial material layer complete for the first time etch after matrix cross-sectional view.
Embodiment
Below in conjunction with the embodiment of the application, the technical scheme of the application is described in detail, but such as
Lower embodiment is only to understand the application, and can not limit the application, the feature in embodiment and embodiment in the application
It can be mutually combined, the multitude of different ways that the application can be defined by the claims and cover is implemented.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
For the ease of description, space relative terms can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be appreciated that space relative terms are intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.For example, if the device in accompanying drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also the positioning of other different modes（It is rotated by 90 ° or in other orientation）, and
And respective explanations are made to the relative description in space used herein above.
As background section is introduced, there is the problem of complex process, the application in semiconductor devices isolation technology
Applicant studied regarding to the issue above, it is proposed that a kind of preparation method of shallow trench.As shown in figure 1, the preparation method
Including：Substrate is divided into first area and second area；First is formed on the position of second area shallow trench to be formed can
Sacrificial material layer；Simultaneously to first can sacrificial material layer and substrate perform etching, the first shallow trench is formed in first area, the
The second shallow trench can be formed on the position of sacrificial material layer by corresponding to first in two regions.
In above-mentioned preparation method, due in etch step by the position to be etched of second area be provided with first
Can sacrificial material layer so that the depth for the second shallow trench that etching second area is formed is less than first that etching first area is formed
The depth of shallow trench.Compared with forming the existing process of different depth shallow trench by multiple photoetching and etching technics, the application
The preparation method of the shallow trench provided is only by photoetching, a mask alignment, and once etches first area and the simultaneously
The technique in two regions is formed the shallow trench of different depth, so as to simplify existing process, reduces production cost, and institute
The shallow trench alignment precision of formation is improved.
In a kind of preferred embodiment of the preparation method of above-mentioned shallow trench provided herein, first can sacrificial material layer shape
Into on the surface of substrate in the second area.In another preferred embodiment, it can be additionally included in forming first before sacrificial material layer
The step of the first pre- shallow trench corresponding to the first shallow trench is formed in the first area, and formation pair in the second area
Should in the second pre- shallow trench of the second shallow trench the step of, now, first can sacrificial material layer may be formed at the second pre- shallow trench
Inwall on.Further illustrated below with reference to accompanying drawing when both modes are respectively adopted, shallow trench provided herein
The detailed step of preparation method.
The illustrative embodiments according to the application are more fully described below in conjunction with accompanying drawing 2a to Fig. 4.However, these
Illustrative embodiments can be implemented by many different forms, and should not be construed to be limited solely to set forth herein
Embodiment.It should be appreciated that these embodiments are provided so that disclosure herein is thoroughly and complete, and will
The design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands
The big thickness of layer and region, and make identical device is presented with like reference characters, thus they are retouched by omitting
State.
As shown in Fig. 2 a to Fig. 2 d, the preparation method of the shallow trench provided in a kind of embodiment of the application include with
Lower step：
First, substrate 10 is divided into first area 11 and second area 13, forms basal body structure as shown in Figure 2 a.Its
The material of middle substrate 10 preferably includes, but is not limited to use Si substrates, preferably can be p-type Si linings wherein during using Si substrates
Bottom, N-type Si substrates or undoped with Si substrates.Wherein first area 11 and second area 13 can be high voltage device regions and low-voltage device
Part area or core memory area and logic circuit area.Those skilled in the art has the ability according to the semiconductor-on-insulator of substrate 10
The function division substrate 10 of device.
After the step of completing substrate being divided into first area 11 and second area 13, formed has over the substrate 10
The protective layer 20 of first opening 51 and the second opening 53, forms basal body structure as shown in Figure 2 b, wherein the first 51 correspondences of opening
It is intended to be formed the position of the first shallow trench 81 in first area 11, the second opening 53, which corresponds in second area 13, to be intended to form second
The position of shallow trench 83.This protective layer 20 can be into being advantageous to protect substrate 10 during subsequent etching shallow trench
Shield.In the step of above-mentioned formation protective layer 20, protective layer 20 can select arbitrarily provide sacrificing for protection for substrate
Material or the effective dielectric layer in subsequent step.
, in this application can be in the following ways in order to form basal body structure as shown in Figure 2 b：As used guarantor
Sheath 20 for can arbitrarily be provided for substrate protection can expendable material when, in a kind of unshowned embodiment of the application,
Forming the step of protective layer 20 with the first opening 51 and the second opening 53 being similar to shown in Fig. 2 b includes：Over the substrate 10
Form preparation protective layer 20 '；The first hard mask layer 43 of patterning is formed on preparation protective layer 20 '；According to the first hard mask
The figure formed in layer 43 etches downwards, forms the protective layer 20 with the first opening 51 and the second opening 53；It is hard to remove first
Mask layer 43, to form basal body structure as shown in Figure 2 b.It should be noted that can expendable material formation protective layer 20 when using
When, formed in the preparation method of the application shallow trench after the first shallow trench 81 and the second shallow trench 83, remove protective layer 20.
When used protective layer 20 is dielectric layer, in a kind of preferred embodiment of the application, formation is similar to
The step of protective layer 20 with the first opening 51 and the second opening 53 shown in Fig. 2 b includes：Preparation is formed over the substrate 10 to protect
Sheath 20 ', to form the basal body structure as shown in Fig. 2 b-1；Preparation protective layer 20 ' on formed second can sacrificial material layer 30,
Form basal body structure as shown in Fig. 2 b-2, and further can form the first of patterning in sacrificial material layer 30 second and cover firmly
Film layer 43, and then form the basal body structure as shown in Fig. 2 b-3.It is downward successively according to the figure formed in the first hard mask layer 43
Etching second can sacrificial material layer 30 and preparation protective layer 20 ', until forming the first opening 51 and the preparation protective layer 20 ' is middle
Two openings 53；Remove the first hard mask layer 43, and remaining second can sacrificial material layer 30, form matrix knot as shown in Figure 2 b
Structure.When in this way, formed on protective layer 20 after first opening 51 and the second opening 53, dielectric layer can be retained
In case follow-up use.
In such scheme when protective layer 20 is dielectric layer, it can be a Rotating fields, but more preferably use multilayer knot
Structure, particularly preferably as shown in structure in Fig. 2 b, outwards include successively using by the surface of substrate 10：SiO2Layer 21, Si3N423 He of layer
SiO2The ONO sandwich constructions of layer 25.Now, the preparation protective layer 20 ' formed as shown in Fig. 2 b-1, including the surface of substrate 10 to
The preparation SiO sequentially formed outside2Layer 21 ', preparation Si3N4Layer 23 ' and preparation SiO2The sandwich construction of layer 25 '.Form preparation guarantor
The technique of sheath 20 ' includes but is not limited to chemical vapor deposition, thermal oxide, evaporation, sputtering.When the protective layer 20 is dielectric layer
When, be formed thereon second can sacrificial material layer 30 can also use it is any it is satisfactory can expendable material, but more preferably
Ground this second can sacrificial material layer 30 be also sandwich construction, as shown in Fig. 2 b-2, this second can sacrificial material layer 30 by preparation protect
The surface of sheath 20 ' outwards includes successively：Amorphous carbon layer 31 and silicon oxynitride layer 33.Forming this second can sacrificial material layer 30
Technique includes but is not limited to chemical vapor deposition, evaporation, sputtering.In a kind of preferred embodiment, the first hard mask layer 43 is
Photoresist layer, when forming the first hard mask layer 43, ARC 41 can be formed in sacrificial material layer 30 by being included in second, so
Photoresist is formed on ARC 41 afterwards, the first above-mentioned hard mask layer 43 is formed after exposure imaging.Wherein form anti-reflective
The technique for penetrating coating and photoresist includes but is not limited to using deposition and spin coating.Above-mentioned preparation technology is state of the art,
It will not be repeated here.
Etching prepares protective layer 20 ' and can expendable material positioned at second prepared on protective layer 20 ' in such scheme
The technique of layer 30 preferably includes, but is not limited to use dry etching, more preferably using plasma etching.Using plasma process
Etching second can sacrificial material layer 30 and during preparation protective layer 20 ', in a kind of optional scheme, the process conditions of etch step
For：Etching gas are CF4And CHF3, sputtering power be 400~1000 watts, etching temperature be 25~60 DEG C, etch period be 30~
360 seconds.
Removed in such scheme the first hard mask layer 43 and remaining second can the technique of sacrificial material layer 30 preferably wrap
Include but be not limited to use wet processing, more preferably using infusion method and rotary spray method.Covered firmly removing first using infusion method
Film layer 43 and remaining second can sacrificial material layer 30 when, a kind of optional mode includes：It is 30%~50% by mass fraction
HF solution is placed in etching groove, the temperature of cleaning reagent in etching groove is controlled at 25~50 DEG C, then comprising the first hard mask layer
43 and remaining second can the semiconductor substrate of sacrificial material layer 30 be placed in HF solution so that the first hard mask layer 43 and residue
Second can sacrificial material layer 30 and HF solution react, the reaction time be 30~120 seconds.Removed using rotary spray method
First hard mask layer 43 and remaining second can sacrificial material layer 30 when, a kind of optional mode includes：It is 30% by mass fraction
~50% HF solution sprayings to comprising the first hard mask layer 43 and remaining second can sacrificial material layer 30 semiconductor substrate
On, and pass through low speed rotation（<500rpm）HF solution is evenly distributed on the surface of above-mentioned semiconductor substrate, be 25 in temperature
Under the conditions of~50 DEG C so that the first hard mask layer 43 and remaining second can sacrificial material layer 30 and HF solution react, instead
It is 30~120 seconds between seasonable.
After completing to form the protective layer 20 with the first opening 51 and the second opening 53, in the second opening of protective layer 20
In 53 formed first can sacrificial material layer 60, form basal body structure as shown in Figure 2 c.For how with the first opening 51
With second opening 53 protective layer 20 second opening 53 in formed first can sacrificial material layer 60, formed be similar to such as Fig. 2 c institutes
During the basal body structure shown, in a kind of preferred embodiment of the application, it comprises the following steps, while the of protective layer 20
Formed in one opening 51 and the second opening 53 first can sacrificial material layer 60, form basal body structure as shown in Fig. 2 c-1.In place
First in the second opening 53 can form the second hard mask layer 73 in sacrificial material layer 60, form the matrix as shown in Fig. 2 c-2
Structure；First removed in the first opening 51 can sacrificial material layer 60；Remove the second hard mask layer in the second opening 53
73, form basal body structure as shown in Figure 2 c.
In above-mentioned steps, it be able to can be sacrificed with substrate 10 and first according to the depth difference h for the different shallow trench to be formed
The etch rate of material layer 60 than the incidence relation between v calculate pre-formed first can sacrificial material layer 60 thickness c, its close
Connection formula is：c=h/v.In a kind of preferred embodiment of the application, in the first opening 51 of protective layer 20 and the second opening 53
It is middle formed first can the technique of sacrificial material layer 60 preferably include, but is not limited to use ald and thermal oxidation technology, formation
First can the thickness of sacrificial material layer 60 be preferably.Above-mentioned technique can accurately control to form first can expendable material
Layer 60 thickness, and first can sacrificial material layer 60 compact structure, uniformly.Can forming first using atom layer deposition process
During sacrificial material layer 60, in a kind of optional scheme, process conditions are：With SiH4And O2For main reacting gas, in reaction cavity
Pressure be 600~1200Pa, the depositing temperature of atomic layer is 450~800 DEG C.Can be sacrificial forming first using thermal oxidation technology
During domestic animal material layer 60, a kind of preferable process conditions are：Oxidizing temperature is 300~600 DEG C, and oxidization time is 60~300 seconds.It is excellent
Selection of land, this first can expendable material can be oxide skin(coating), such as SiO2。
Include the step of first in the second opening 53 can form the second hard mask layer 73 in sacrificial material layer 60：
In a kind of preferred embodiment of the application, while the second hard mask layer is formed in the first opening 51 and the second opening 53
73；The second hard mask layer 73 in the first opening 51 is removed, forms the basal body structure as shown in Fig. 2 c-2.Second hard mask layer
73 can be formed using photoresist, and the technique for forming the second hard mask layer 73 preferably includes deposition and spin coating, remove the first opening
The technique of the second hard mask layer 73 in 51 preferably includes, but is not limited to use wet processing.Removing the in the first opening 51
Also include the step that ion implanting is carried out to first area 11 before the step of two hard mask layer 73, in a kind of preferred embodiment
Suddenly, to improve the threshold voltage of first area 11.
In the above-mentioned methods, wet-etching technology can be used to remove first be located in the first opening 51 can expendable material
Layer 60, in a kind of preferred embodiment of the application, the speed of etching is preferablyCarved when using wet processing
In the opening of erosion first 51 first can sacrificial material layer 60 when, in a kind of optional scheme, etch step includes：It is by mass fraction
30%~50% HF solution is placed in etching groove, the temperature of HF solution in etching groove is controlled at 25~50 DEG C, then comprising first
Can the silicon chip of sacrificial material layer 60 be placed in HF solution so that first can sacrificial material layer 60 and HF solution react, react
Time is 30~120 seconds.
In a kind of preferred embodiment of the application, the second hard mask layer 73 is photoresist, is removed using wet processing
The second hard mask layer 73 in the second opening 53, the reagent of wet processing preferably include, but is not limited to use N- methylpyrroles
Alkanone.The second hard mask layer 73 in the second opening 53, a kind of preferred embodiment are etched when using 1-METHYLPYRROLIDONE
Including：By 1-METHYLPYRROLIDONE solution spraying in comprising the second opening 53 on the silicon chip of second hard mask layer, and by low
Speed rotation（<500rpm）1-METHYLPYRROLIDONE solution is evenly distributed on silicon chip surface, be 25~50 DEG C of conditions in temperature
Under so that the second hard mask layer 73 reacts with 1-METHYLPYRROLIDONE, and the reaction time is 30~100 seconds.
Complete in second area 13 shallow trench to be formed position formed first can sacrificial material layer 60 the step of it
Afterwards, at the same to first can sacrificial material layer 60 and substrate 10 perform etching, the first shallow trench 81 is formed in first area 11, the
The second shallow trench 83 can be formed on the position of sacrificial material layer 60 by corresponding to first in two regions 13, form base as shown in Figure 2 d
Body structure.By the position to be etched of second area compared to more than first area first can sacrificial material layer, make etching second
The depth for the second shallow trench that region is formed is less than the depth for the first shallow trench that etching first area is formed the one of the application
In kind preferred embodiment, above-mentioned etching technics can be dry etching, more preferably using plasma process.Using plasma
When technique etches first area 11 and second area 13, in a kind of optional scheme, the process conditions of plasma etching are：Etching
Gas is CF4And CHF3, sputtering power is 400~1000 watts, and etching temperature is 25~60 DEG C, and etch period is 30~120 seconds.
The preparation method for according to above-mentioned steps carrying out that shallow trench provided herein can be completed, this method can be used for
In the preparation of memory device.In a kind of preferred embodiment of the application, the preparation method of the memory device, being included in has
Form shallow trench on logic region and the substrate of core memory area 10, and grid are made on the substrate 10 between shallow trench
Pole, source electrode and drain electrode, wherein being used with the method that shallow trench is formed on logic region and the substrate of core memory area 10
Above-mentioned preparation method.This preparation method provided herein is only by photoetching, a mask alignment, and once simultaneously
The technique of etching first area and second area is formed the shallow trench of different depth, so as to simplify existing process, reduces
Production cost, and the shallow trench alignment precision formed is improved.
As shown in Fig. 3 a to Fig. 4, the preparation method of the shallow trench provided in second of embodiment of the application, including
Following steps：
First, substrate 10 is divided into first area 11 and second area 13, forms basal body structure as shown in Figure 3 a.Its
The material of middle substrate 10 preferably includes, but is not limited to use Si substrates, wherein the Si substrates used, preferably can be p-type Si linings
Bottom, N-type Si substrates and undoped with Si substrates.Wherein first area 11 and second area 13 can be high voltage device regions and low-voltage device
Part area or core memory area and logic circuit area.Those skilled in the art has the ability according to the semiconductor-on-insulator of substrate 10
The function division substrate 10 of device.
After the step of completing substrate being divided into first area 11 and second area 13, formed in first area 11
Corresponding to the first pre- shallow trench 81 ' of the first shallow trench 81, the corresponding to the second shallow trench 83 is formed in second area 13
Two pre- shallow trench 83 '.In a kind of preferred mode of the application, in order to during subsequent etching shallow trench to substrate
10 are protected, and the first pre- shallow trench 81 ' corresponding to the first shallow trench 81 are formed in first area 11, in second area 13
In middle the step of forming the second pre- shallow trench 83 ' for corresponding to the second shallow trench 83, while formed over the substrate 10 with first
The protective layer 20 of the opening 53 of opening 51 and second, wherein the first opening 51 communicates with the first pre- shallow trench 81 ', the second opening 53 and
Second pre- shallow trench 83 ' communicates, and forms basal body structure as shown in Figure 3 b.The formation of this protective layer 20, which has, to be beneficial to subsequently carving
Substrate 10 is protected during erosion shallow trench.In the step of above-mentioned formation protective layer 20, protective layer 20 can select
Can arbitrarily be provided for substrate protection can expendable material or the effective dielectric layer in subsequent step.
, in this application can be in the following ways in order to form basal body structure as shown in Figure 3 b：As used guarantor
Sheath 20 for can arbitrarily be provided for substrate protection can expendable material when, in a kind of unshowned embodiment of the application,
Formed and similar to the structure shown in Fig. 3 b, i.e., form the protection with the first opening 51 and the second opening 53 over the substrate 10
Layer, while the first pre- shallow trench 81 ' communicated with the first opening 51 is formed over the substrate 10, and communicated with the second opening 53
The step of second pre- shallow trench 83 ', includes：Preparation protective layer 20 ' is formed over the substrate 10；Figure is formed on preparation protective layer 20 '
First hard mask layer 43 of case；Etch downwards to be formed with the first opening 51 and the according to the figure in the first hard mask layer 43
The protective layer 20 of two openings 53, and formed be open 51 the first pre- shallow trench 81 ' for communicating with first over the substrate 10, and with the
The second pre- shallow trench 83 ' that two openings 53 communicate；The first hard mask layer 43 is removed, to form basal body structure as shown in Figure 3 b.
It should be noted that when using can expendable material formed protective layer 20 when, form first in the preparation method of the application shallow trench
After the shallow trench 83 of shallow trench 81 and second, protective layer 20 is removed.
When used protective layer 20 is dielectric layer, in a kind of preferred embodiment of the application, using with Fig. 2 b-
1 to the similar operating procedure of the operating procedure gone out given in Fig. 2 b-3.Being formed over the substrate 10 has the first opening 51 and the
The protective layer of two openings 53, while formed be open 51 the first pre- shallow trench 81 ' for communicating with first over the substrate 10, and with the
The second pre- shallow trench 83 ' that two openings 53 communicate, its operating procedure include：Preparation dielectric layer 20 ' is formed over the substrate 10, pre-
Standby dielectric layer 20 ' is above formed second can sacrificial material layer 30, and can further be formed graphically in sacrificial material layer 30 second
The first hard mask layer 43, according to figure in the first hard mask layer 43 be sequentially etched downwards second can sacrificial material layer 30, preparation
Protective layer 20 ' and substrate 10, extremely in the middle opening 53 of the opening of formation first 51 and second of preparation protective layer 20 ', and over the substrate 10
Form the first pre- shallow trench 81 ' communicated with the first opening 51, and the second pre- shallow trench 83 ' communicated with the second opening 53；
Remove the first hard mask layer 43, and remaining second can sacrificial material layer 30, form basal body structure as shown in Figure 2 b.Using
During this mode, the protective layer 20 with the first opening 51 and the second opening 53 is formed over the substrate 10, while over the substrate 10
The first pre- shallow trench 81 ' that formation communicates with the first opening 51, and the second pre- shallow trench 83 ' communicated with the second opening 53
After step, retain dielectric layer in case follow-up use.
When protective layer 20 is dielectric layer in such scheme, it can be a Rotating fields, but more preferably use sandwich construction,
Particularly preferably as shown in figure 3b, outwards include successively using by the surface of substrate 10：SiO2Layer 21, Si3N423 and SiO of layer2Layer 25
ONO sandwich constructions.Now, the preparation protective layer 20 ' formed, including the preparation SiO that the surface of substrate 10 outwards sequentially forms2
Layer, preparation Si3N4Layer and preparation SiO2The sandwich construction of layer.The technique for forming the preparation protective layer 20 ' includes but is not limited to chemistry
Vapour deposition, thermal oxide, evaporation, sputtering.When the protective layer 20 is dielectric layer, what is be formed thereon second can sacrificial material layer
30 can also make it is any it is satisfactory can expendable material, but more preferably this second can sacrificial material layer 30 be also multilayer knot
Structure, outwards included successively by preparation protective layer 20 ' surface：Amorphous carbon layer and silicon oxynitride layer.Forming this second can sacrifice material
The technique of the bed of material 30 includes but is not limited to chemical vapor deposition, evaporation, sputtering.Above-mentioned first hard mask layer 43 can be any energy
The material layer or photoresist layer enough to play a protective role, a kind of preferred embodiment, forming the step of photoresist layer
Suddenly ARC 41 can be formed in sacrificial material layer 30 by being included in second, then form photoresist on ARC 41
Layer, wherein the technique for forming ARC and photoresist includes but is not limited to using deposition and spin coating.Above-mentioned preparation technology is
State of the art, it will not be repeated here.
Etching technics preferably includes, but is not limited to use dry etching in such scheme, is more preferably carved using plasma
Erosion.Using plasma process etching second can sacrificial material layer 30 and during preparation protective layer 20 ', in a kind of optional scheme,
The process conditions of etch step are：Etching gas are CF4And CHF3, sputtering power be 400~1000 watts, etching temperature be 25~
60 DEG C, etch period is 30~360 seconds.In above-mentioned etching process, by the process conditions for controlling etching（Such as temperature, when
Between etc.）, and the depth of detection etch so that the first pre- shallow trench 81 ' and the second pre- shallow trench 83 ' are formed over the substrate 10.
The first hard mask layer 43 is removed in such scheme（It is preferred that first hard mask layer is photoresist layer）With it is remaining
Second can the technique of sacrificial material layer 30 preferably include, but is not limited to use wet processing, more preferably using infusion method and rotation spray
Leaching method.Using infusion method remove the first hard mask layer 43 and remaining second can sacrificial material layer 30 when, a kind of optional side
Formula includes：The HF solution that mass fraction is 30%~50% is placed in etching groove, controls the temperature of cleaning reagent in etching groove to exist
25~50 DEG C, then comprising the first hard mask layer 46 and remaining second can the semiconductor substrate of sacrificial material layer 30 to be placed in HF molten
In liquid so that the first hard mask layer 43 and remaining second can sacrificial material layer 30 and HF solution react, the reaction time is
30~120 seconds.Using rotary spray method remove the first hard mask layer 43 and remaining second can sacrificial material layer 30 when, it is a kind of
Optional mode includes：By HF solution sprayings that mass fraction is 30%~50% to including the first hard mask layer 43 and remaining the
Two can be on the semiconductor substrate of sacrificial material layer 30, and passes through low speed rotation（<500rpm）HF solution is set to be evenly distributed on silicon chip
On surface, temperature be 25~50 DEG C under the conditions of so that the first hard mask layer 43 and remaining second can sacrificial material layer 30 with
HF solution reacts, and the reaction time is 30~120 seconds.
Complete to form the first pre- shallow trench 81 ' corresponding to the first shallow trench 81 in first area 11, in the secondth area
After the step of the second pre- shallow trench 83 ' corresponding to the second shallow trench 83 is formed in domain 13, in the second pre- interior formation of shallow trench 83 '
First can sacrificial material layer 60, form basal body structure as shown in Figure 3 c.For how to form the the second pre- shallow trench 83 ' is middle
One can sacrificial material layer 60, formed when being similar to basal body structure as shown in Figure 3 c, in a kind of preferred embodiment of the application
In, it comprises the following steps, while can expendable material in the first pre- shallow trench 81 ' and the second pre- middle formation first of shallow trench 83 '
Layer 60.The second hard mask layer 73 can be formed in sacrificial material layer 60 in first in the second pre- shallow trench 83 '；Removal is located at
First in first pre- shallow trench 81 ' can sacrificial material layer 60；The second hard mask layer 73 is removed, and then is formed as shown in Figure 3 c
Basal body structure.
It is above-mentioned the second pre- shallow trench 83 ' it is interior formed first can sacrificial material layer 60 the step of in, when the table in substrate 10
When face forms matcoveredn 20, its preparation method comprises the following steps：Simultaneously in the first pre- shallow trench 81 ' and the second pre- shallow trench
83 ' it is middle formed first can sacrificial material layer 60, now, this first can sacrificial material layer 60 can be not formed in protective layer 20 the
In one opening 51 and the second 53 side walls of opening, and it is made only in the inwall of the first pre- shallow trench 81 ' and the second pre- shallow trench 83 '
On, form the basal body structure as shown in Fig. 3 c-1；Can shape in sacrificial material layer 60 in first in the second pre- shallow trench 83 '
Into the second hard mask layer 73, preferably second hard mask layer 73 is covered in the upper surface of the protective layer 20 in second area, and
It is filled in the first opening 51 and the second pre- shallow trench 83 ', forms the basal body structure as shown in Fig. 3 c-1；Remove pre- positioned at first
In shallow trench 81 ' first can sacrificial material layer 60, form basal body structure as shown in Fig. 3 c-2；Remove the second pre- shallow trench
83 ' interior second hard mask layers 73, form basal body structure as shown in Figure 3 c.
In above-mentioned steps, it be able to can be sacrificed with substrate 10 and first according to the depth difference h for the different shallow trench to be formed
The etch rate of material layer 60 than the incidence relation between v calculate pre-formed first can sacrificial material layer 60 thickness c, its close
Connection formula is：c=h/v.In a kind of preferred embodiment of the application, in the first pre- shallow trench 81 ' in substrate 10 and
Two pre- shallow trench 83 ' are middle formed first can the technique of sacrificial material layer 60 preferably include, but is not limited to use thermal oxidation technology, shape
Into first can the thickness of sacrificial material layer 60 be preferably.Above-mentioned technique, which can accurately control, to be formed first and can sacrifice material
The thickness of the bed of material 60, and first can sacrificial material layer 60 compact structure, uniformly.Can be sacrificial forming first using thermal oxidation technology
During domestic animal material layer 60, a kind of preferable process conditions are：Oxidizing temperature is 300~600 DEG C, and oxidization time is 60~300 seconds.It is excellent
Selection of land, this first can sacrificial material layer 60 can be oxide skin(coating), such as SiO2。
First in the second shallow pre- groove 83 ' can form the second hard mask layer 73 in sacrificial material layer 60 the step of
Including：Simultaneously in the first pre- shallow trench 81 ' and second the second hard mask layer of the pre- middle formation of shallow trench 83 '；Remove the first pre- shallow ridges
The second interior hard mask layer 73 of groove 81 '.When forming matcoveredn on substrate 10, in the in the second shallow pre- groove 83 '
One includes the step of light the second hard mask layer 73 can be formed in sacrificial material layer 60：Simultaneously in the first pre- shallow trench 81 ', positioned at it
On the first opening 51 and the second pre- shallow trench 83 ', form the second hard mask layer 73 in the second opening being positioned above.It is actual
In operation, second hard mask layer 73 can be covered on protective layer 20 simultaneously；Removal is located at the first pre- shallow trench 81 ', ascends the throne
The second hard mask layer 73 in the opening of side first 51 thereon, forms the basal body structure as shown in Fig. 3 c-2.
In the above-mentioned methods, the second hard mask layer 73 is formed（It is preferred that second hard mask layer is photoresist layer）Technique it is excellent
Choosing includes deposition and spin coating, and the technique for removing the second hard mask layer preferably includes, but is not limited to use wet processing.It is preferred that going
Before the step of the second interior hard mask layer of the first pre- shallow trench 81 ', also include in a kind of preferred embodiment to first
Region 11 carries out the step of ion implanting, to improve the threshold voltage of first area 11.
In the above-mentioned methods, can use wet-etching technology remove positioned at the first pre- shallow trench 81 ' it is interior first can be sacrificial
Domestic animal material layer 60, in a kind of preferred embodiment of the application, the speed of etching is preferablyWhen using wet method
Technique etch the first pre- shallow trench 81 ' interior first can sacrificial material layer 60 when, in a kind of optional scheme, etch step includes：
The HF solution that mass fraction is 30%~50% is placed in etching groove, controls the temperature of HF solution in etching groove at 25~50 DEG C,
Then comprising first can the silicon chip of sacrificial material layer 60 be placed in HF solution so that first can sacrificial material layer 60 sent out with HF solution
Raw reaction, reaction time are 30~120 seconds.
In a kind of preferred embodiment of the application, removed using wet processing interior positioned at the second shallow pre- groove 83 '
Second hard mask layer 73（It is preferred that second hard mask layer is photoresist layer）, the reagent of wet processing preferably includes, but is not limited to adopt
Use 1-METHYLPYRROLIDONE.When etching interior the second hard mask layer 73 of the second shallow pre- groove 83 ' using 1-METHYLPYRROLIDONE, one
Kind preferred embodiment includes：1-METHYLPYRROLIDONE solution spraying is covered firmly to comprising the second shallow pre- groove 83 ' interior second
On the silicon chip of film layer, and pass through low speed rotation（<500rpm）1-METHYLPYRROLIDONE solution is set to be evenly distributed on silicon chip surface,
Under the conditions of temperature is 25~50 DEG C so that the second hard mask layer reacts with 1-METHYLPYRROLIDONE, the reaction time 30
~100 seconds.
Complete in second area 13 shallow trench to be formed position formed first can sacrificial material layer 60 the step of it
Afterwards, at the same to first can sacrificial material layer 60 and substrate 10 perform etching, the first shallow trench 81 is formed in first area 11, the
The second shallow trench 83 can be formed on the position of sacrificial material layer 60 by corresponding to first in two regions 13, form base as shown in Figure 3 d
Body structure.
In this embodiment, because forming first, can be just pre-formed first before sacrificial material layer 60 pre-
Shallow trench 81 ' and the second pre- shallow trench 83 ', according to the depth of the formed second pre- shallow trench 83 ', and first can sacrifice material
The influence of the factors such as the etching selection ratio between the bed of material 60 and substrate.In the step of the second shallow trench 83 are formed in substrate 10,
Following either type can be taken.
（1）While etched substrate forms the first shallow trench 81, etching is formed in the second pre- shallow trench 83 ' completely
On wall first can sacrificial material layer 60, formed be located at substrate 10 in the second shallow trench 83.It is pre- that this scheme is suitable for second
The depth of shallow trench 83 ' has been able to the requirement for meeting the second shallow trench 83, and selected first can sacrificial material layer 60
Material and substrate 10 between etching selection ratio, be just met for by first can sacrificial material layer 60 etch completely, and formed
The depth of the second shallow trench 83 meet the requirements.
（2）While etched substrate forms the first shallow trench 81, to being formed on the inwall of the second pre- shallow trench 83 '
First can sacrificial material layer 60 carry out first time etching, complete the first shallow trench 81 etching after, to formed it is pre- shallow second
On the inwall of groove 83 ' first can sacrificial material layer 60 carry out second and etch, form the second shallow ridges being located in substrate 10
Groove 83；The depth that this scheme is suitable for the second pre- shallow trench 83 ' has been able to the requirement for meeting the second shallow trench 83, Er Qie
When the depth of the second shallow trench 83 formed meets the requirements, remained on the second shallow trench 83 first can sacrificial material layer 60,
Form basal body structure as shown in Figure 4, now can by first can sacrificial material layer 60 carry out secondarily etched mode,
By it, etching removes completely.
（3）While etched substrate forms the first shallow trench 81, sequentially etching is formed in the described second pre- shallow trench 83 '
Inwall on first can sacrificial material layer 60 and positioned at first can the lower section of sacrificial material layer 60 substrate 10, formation is located at substrate
Second groove 83 in 10.The depth that this scheme is suitable for being formed the second pre- shallow trench 83 ' is shallower, and etches and formed
The first shallow trench 83 during, by first can sacrificial material layer 60 completely etching remove, and further etching be located at first
Matrix that can be under sacrificial material layer 60, while formed and meet that semiconductor equipment is shallow to the first shallow trench 81 and second of depth requirements
Groove 83.
In a kind of preferred embodiment of the application, above-mentioned etching technics can be dry etching, more preferably use etc.
Ion processes.When using plasma process etching first area 11 and second area 13, in a kind of optional scheme, plasma
The process conditions of etching are：Etching gas are CF4And CHF3, sputtering power is 400~1000 watts, and etching temperature is 25~60 DEG C,
Etch period is 30~120 seconds.
Present invention also provides a kind of preparation method of memory device, it is included in logic region and core memory area
Substrate on form shallow trench, and grid, source electrode and drain electrode are made on the substrate between shallow trench, wherein with logic
The method that shallow trench is formed on the substrate of region and core memory area is the preparation method of the above-mentioned shallow trench of the application.
The preparation method for shallow trench provided herein being further illustrated with specific embodiment below.
Embodiment 1
A kind of method for the isolated groove for forming memory device is present embodiments provided, this method comprises the following steps：
Sequentially formed from lower to upper by SiO in the upper surface including core memory area and the Si substrates of logic circuit area2、
Si3N4、SiO2The dielectric layer of composition, second be made up of agraphitic carbon and SiON can sacrificial material layer, ARC and photoetching
Glue-line, and the position of shallow trench is defined by photoetching on photoresist layer.
Along the position antagonistic reflex coating of above-mentioned shallow trench, second can sacrificial material layer and dielectric layer perform etching, in core
Feel and the first opening is formed on the dielectric layer of storage area, and the second opening is formed on the dielectric layer of logic circuit area, what it was etched
Concrete technology condition is：Main etching gas are CF4And CHF3, sputtering power is 300 watts, and etching temperature is 60 DEG C, etch period
For 60 seconds.
Using HF etch remove ARC and second can sacrificial material layer, wherein HF mass fraction is in HF solution
35%, etch period is 40 seconds.
SiO is formed in the first opening and the second opening using atom layer deposition process2Layer, its concrete technology condition are：
With SiH4And O2For main reacting gas, the pressure in reaction cavity is 650Pa, and the depositing temperature of atomic layer is 570 DEG C, wherein
First can the thickness of sacrificial material layer be。
The SiO removed in core memory area is etched using HF2Layer, HF mass fraction is 35% wherein in HF solution, processing
Time is 20 seconds.
The silicon substrate in the first opening and the second opening is performed etching using plasma etching industrial, the technique bar of etching
Part is：Etching gas are CF4And CHF3, sputtering power is 400 watts, and etching temperature is 60 DEG C, and etch period is 80 seconds.
The depth of isolated groove is measured, test result shows that the depth of the groove in high voltage device regions is, logic
The depth of groove in circuit region is。
Embodiment 2
A kind of method for the isolated groove for forming memory device is present embodiments provided, this method comprises the following steps：
Sequentially formed from lower to upper by SiO in the upper surface including core memory area and the Si substrates of logic circuit area2、
Si3N4、SiO2The dielectric layer of composition, second be made up of agraphitic carbon and SiON can sacrificial material layer, ARC and photoetching
Glue-line, and grooved position is defined on photoresist layer by photoetching.
Along above-mentioned grooved position antagonistic reflex coating, second can sacrificial material layer, dielectric layer and substrate perform etching,
The first opening, substrate the first pre- shallow trench of interior formation are formed on the dielectric layer in core memory area, and in the medium of logic circuit area
The second opening, substrate the second pre- shallow trench of interior formation are formed on layer, its concrete technology condition etched is：Etching gas are CF4
And CHF3, sputtering power is 400 watts, and etching temperature is 60 DEG C, and etch period is 70 seconds.
Using HF etch remove ARC and second can sacrificial material layer, wherein HF mass fraction is in HF solution
35%, etch period is 40 seconds.
SiO is formed in the first pre- shallow trench and the second pre- shallow trench using thermal oxidation technology2Layer, its concrete technology condition
For：Oxidizing temperature is 400 DEG C, and oxidization time is 120 seconds.
The SiO removed in core memory area is etched using HF2Layer, HF mass fraction is 35% wherein in HF solution, processing
Time is 20 seconds.
The silicon substrate in the first pre- shallow trench and the second prefabricated shallow trench is performed etching using plasma etching industrial, carved
The process conditions of erosion are：Etching gas are CF4And CHF3, sputtering power is 400 watts, and etching temperature is 60 DEG C, etch period 80
Second.
The depth of isolated groove is measured, test result shows that the depth of the groove in high voltage device regions is, logic
The depth of groove in circuit region is。
As can be seen from the above embodiments, the above-mentioned example of the application realizes following technique effect：
（1）Substrate is divided into first area and second area, and the position shape of shallow trench to be formed in the second area
Into first can sacrificial material layer, then simultaneously first area and second area are performed etching.By in the to be etched of second area
Lose position compared to set first can sacrificial material layer so that the position more compared to first area first for etching second area can be sacrificial
Domestic animal material layer, therefore the depth for etching the second shallow trench that second area is formed is less than the first shallow ridges that etching first area is formed
The depth of groove.
（2）Compared with forming the existing process of different depth shallow trench by multiple photoetching and etching technics, the application institute
The preparation method of the shallow trench of offer etches first area and second simultaneously only by photoetching, a mask alignment, and once
The technique in region is formed the shallow trench of different depth, so as to simplify existing process, reduces production cost, and institute's shape
Into shallow trench alignment precision be improved.
The preferred embodiment of the application is these are only, is not limited to the application, for those skilled in the art
For member, the application can have various modifications and variations.All any modifications within spirit herein and principle, made,
Equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (17)
1. a kind of preparation method of shallow trench, it is characterised in that the preparation method includes：
Substrate is divided into first area and second area；
First is formed on the position of second area shallow trench to be formed can sacrificial material layer；And
Simultaneously to described first can sacrificial material layer and the substrate perform etching, form the first shallow ridges in the first area
Groove, the second shallow trench can be formed on the position of sacrificial material layer corresponding to first in the second area,
The preparation method also includes：
Forming described first the guarantor with the first opening and the second opening can be formed over the substrate before sacrificial material layer
Sheath, first opening correspond in the first area position for being intended to be formed the first shallow trench, and second opening is corresponding
It is intended to be formed the position of the second shallow trench in the second area；
It is described formed first can sacrificial material layer the step of in, described first can sacrificial material layer be formed at it is described second opening
Side wall on and it is unfilled it is described second opening；
Or
In the preparation method, can also it include before sacrificial material layer forming described first：
The step of position corresponding to first shallow trench in the first area forms the first pre- shallow trench, Yi Ji
The step of position in the second area corresponding to second shallow trench forms the second pre- shallow trench, described first can
Sacrificial material layer is formed on the inwall of the described second pre- shallow trench.
2. preparation method according to claim 1, it is characterised in that the protective layer is sacrificial material layer or dielectric layer.
3. preparation method according to claim 2, it is characterised in that when the protective layer is sacrificial material layer, formed
It is described have the first opening and second opening protective layer the step of include：
Preparation protective layer is formed over the substrate；
The first hard mask layer of patterning is formed on the prepared protective layer；
Etched downwards according to figure in first hard mask layer, form the protection with the first opening and the second opening
Layer；
Remove first hard mask layer；And
The remaining protective layer is removed after first shallow trench and the second shallow trench is formed.
4. preparation method according to claim 2, it is characterised in that when the protective layer is as dielectric layer, the shape
Include into the step of protective layer being open with the first opening and second：
Preparation protective layer is formed over the substrate；
Second is formed on the prepared protective layer can sacrificial material layer；
In the first hard mask layer that described second can form patterning in sacrificial material layer；
Being sequentially etched described second downwards according to figure in first hard mask layer can sacrificial material layer and the preparation protection
Layer, until forming the first opening and the second opening in the prepared protective layer；And
Removing first hard mask layer and remaining described second can sacrificial material layer.
5. preparation method according to claim 1, it is characterised in that forming described first in the described second opening can be sacrificial
The step of domestic animal material layer, includes：
Forming described first in the first opening and the second opening of the protective layer simultaneously can sacrificial material layer；
The second hard mask layer can be formed in described first in the described second opening in sacrificial material layer；
Described first removed in the described first opening can sacrificial material layer；And
Remove second hard mask layer.
6. preparation method according to claim 1, it is characterised in that the preparation method also includes：Forming described the
One can form the protective layer with the first opening and the second opening over the substrate, described first opens before sacrificial material layer
Mouth communicates with the described first pre- shallow trench, and second opening communicates with the described second pre- shallow trench.
7. preparation method according to claim 6, it is characterised in that the protective layer is sacrificial material layer, or described
Protective layer is dielectric layer.
8. preparation method according to claim 7, it is characterised in that the protective layer is sacrificial material layer, the formation
Protective layer with the first opening and the second opening, and the first pre- shallow trench and the second pre- shallow trench are formed over the substrate
The step of include：
Preparation protective layer is formed over the substrate；
The first hard mask layer of patterning is formed on the prepared protective layer；
Etched downwards according to figure in first hard mask layer, form the protection with the first opening and the second opening
Layer, and the first pre- shallow trench communicated with the described first opening is formed over the substrate, and communicated with the described second opening
The second pre- shallow trench；
Remove first hard mask layer；And
The remaining protective layer is removed after the first shallow trench and the second shallow trench is formed.
9. preparation method according to claim 7, it is characterised in that when the protective layer is dielectric layer, the formation
Protective layer with the first opening and the second opening, and the first pre- shallow trench and the second pre- shallow trench are formed over the substrate
The step of include：
Preparation protective layer is formed over the substrate；
Second is formed on the prepared protective layer can sacrificial material layer；
Patterned first hard mask layer can be formed described second in sacrificial material layer；
Etching described second downwards according to figure in first hard mask layer can sacrificial material layer, the prepared protective layer and lining
Bottom, it is open to the first opening and second is formed in the prepared protective layer, and is formed opened with described first over the substrate
The first pre- shallow trench that mouth communicates, and the second pre- shallow trench communicated with the described second opening；
Removing first hard mask layer and remaining described second can sacrificial material layer.
10. preparation method according to claim 1, it is characterised in that described is formed in the described second pre- shallow trench
One can include the step of sacrificial material layer：
Forming described first in the described first pre- shallow trench and the second pre- shallow trench simultaneously can sacrificial material layer；
The second hard mask layer can be formed in described first in the described second pre- shallow trench in sacrificial material layer；
Removing described first be located in the described first pre- shallow trench can sacrificial material layer；
Remove second hard mask layer.
11. preparation method according to claim 1, it is characterised in that described to form first shallow trench in the substrate
In the step of the second shallow trench,
While etched substrate forms first shallow trench, etching, which removes, to be formed on the described second pre- shallow trench inwall
Described first can sacrificial material layer, formed be located at the substrate in second shallow trench；Or
While etched substrate forms first shallow trench, to forming described the on the described second pre- shallow trench inwall
One can sacrificial material layer carry out first time etching, it is pre- described second to being formed after the etching of first shallow trench is completed
On shallow trench inwall described first can sacrificial material layer carry out second and etch, form described second be located in the substrate
Shallow trench；Or
While etched substrate forms first shallow trench, sequentially etching is formed on the described second pre- shallow trench inwall
Described first can sacrificial material layer and positioned at the described first substrate that can be below sacrificial material layer, formed and be located in the substrate
Second shallow trench.
12. preparation method according to claim 1, it is characterised in that described first can the thickness of sacrificial material layer be c,
Depth difference between first shallow trench and the second shallow trench is h, the substrate and first can sacrificial material layer etching speed
Rate ratio is v, and described first can sacrificial material layer thickness c=h/v, be preferably
13. preparation method according to claim 1, it is characterised in that described first can sacrificial material layer be oxide skin(coating).
14. preparation method according to claim 1, it is characterised in that formed described first can sacrificial material layer technique
For ald or thermal oxidation technology, the temperature of the thermal oxidation technology is 300~600 DEG C.
15. the preparation method according to claim 5 or 10, it is characterised in that remove positioned at the first opening or described first
Described first in pre- shallow trench can be etched the step of sacrificial material layer using wet processing, and the speed of etching is
16. the preparation method according to claim 4 or 9, it is characterised in that the protective layer is sandwich construction, by described
Substrate surface outwards includes successively：SiO2 layers, Si3N4 layers, SiO2 layers；Described second can sacrificial material layer there is sandwich construction,
Outwards included successively by the dielectric layer surface：Amorphous carbon layer and silicon oxynitride layer.
17. a kind of preparation method of memory device, be included on the substrate with logic region and core memory area formed it is shallow
Grid, source electrode and drain electrode are made on groove, and substrate between the shallow trench, it is characterised in that with logic area
Making of the method for the shallow trench any one of claim 1 to 16 is formed on the substrate of domain and core memory area
Method.
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| CN105655286A (en) * | 2016-02-04 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | Forming method of semiconductor structure |
| CN108231770B (en) * | 2016-12-22 | 2021-05-04 | 联华电子股份有限公司 | Method for forming pattern |
| CN113488430B (en) * | 2018-04-03 | 2023-04-25 | 长鑫存储技术有限公司 | Forming method of self-aligned groove |
| US10475648B1 (en) | 2018-05-01 | 2019-11-12 | United Microelectronics Corp. | Method for patterning a semiconductor structure |
| CN111627977B (en) * | 2019-02-28 | 2023-08-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure, forming method thereof and semiconductor device |
| CN112018026B (en) * | 2020-10-16 | 2021-02-05 | 晶芯成(北京)科技有限公司 | Method for forming groove |
| CN114121776B (en) * | 2022-01-26 | 2022-04-19 | 晶芯成(北京)科技有限公司 | Manufacturing method of semiconductor isolation structure |
| CN116230529B (en) * | 2023-05-06 | 2023-07-11 | 合肥晶合集成电路股份有限公司 | Method for manufacturing semiconductor structure |
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| US6207534B1 (en) * | 1999-09-03 | 2001-03-27 | Chartered Semiconductor Manufacturing Ltd. | Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing |
| CN102916024A (en) * | 2012-10-08 | 2013-02-06 | 上海华力微电子有限公司 | Method for forming double-depth isolating grooves |
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| KR101396124B1 (en) * | 2007-12-21 | 2014-05-19 | 삼성전자주식회사 | Method of forming a trench and method of manufacturing a semiconductor device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207534B1 (en) * | 1999-09-03 | 2001-03-27 | Chartered Semiconductor Manufacturing Ltd. | Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing |
| CN102916024A (en) * | 2012-10-08 | 2013-02-06 | 上海华力微电子有限公司 | Method for forming double-depth isolating grooves |
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