CN104934311A - Etching method, method for forming groove on semiconductor substrate, PMOS transistor, and manufacturing method for PMOS transistor - Google Patents
Etching method, method for forming groove on semiconductor substrate, PMOS transistor, and manufacturing method for PMOS transistor Download PDFInfo
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Abstract
The invention discloses an etching method, a method for forming a groove on a semiconductor substrate, a PMOS transistor, and a manufacturing method for the PMOS transistor. The etching method comprises the steps: employing a tetramethyl ammonium hydroxide solution to achieve the etching of a to-be-etched device under the condition of no light; and carrying out the etching of the to-be-etched device under the condition of no light. The method can solve a problem that the OH-activity of the tetramethyl ammonium hydroxide decreases because of illumination, thereby relatively improving the activity of selective etching of the tetramethyl ammonium hydroxide solution, and preventing the activity of the selective etching of the tetramethyl ammonium hydroxide solution from causing the excessive deformation of the structure of an etching device.
Description
Technical field
The application relates to semiconductor fabrication techniques field, in particular to a kind of lithographic method, the method forming groove on a semiconductor substrate, PMOS transistor and preparation method thereof.
Background technology
In semiconductor fabrication process, usually need to treat etched features and carry out anisotropic wet etch, to form required device architecture.Such as groove, through hole and opening etc.At present, conventional anisotropic wet etch corrosive agent has Tetramethylammonium hydroxide, potassium hydroxide and ammoniacal liquor etc.Wherein Tetramethylammonium hydroxide has excellent corrosive nature, becomes corrosive agent main in semiconductor fabrication process gradually.But when adopting Tetramethylammonium hydroxide to carry out anisotropic wet etch, the device architecture formed after etching often deforms, and then makes the hydraulic performance decline of obtained device.
Such as, device is formed in the manufacturing process of through hole, usually need to adopt Tetramethylammonium hydroxide to carry out anisotropic etching to device, to form the through hole (such as trapezoidal hole) with characteristic shape, improve the adhesion between through hole and institute's filler.But after adopting Tetramethylammonium hydroxide to etch device, the through-hole side wall formed can form sunk structure, reduces the adhesion between through hole and institute's filler, and then makes the hydraulic performance decline of obtained device.
Again such as, in the manufacturing process of PMOS transistor, be usually included on substrate and form groove, and the step of silicon Germanium layer in a groove, to apply suitable compression by the channel region of germanium-silicon layer pair pmos transistor, and then improve the carrier mobility in PMOS transistor.Wherein, above-mentioned groove normally adopts Tetramethylammonium hydroxide etched substrate to be formed.But the wet etching of Tetramethylammonium hydroxide can cause the shape of groove to change, thus cause the structure of the germanium-silicon layer of follow-up formation uneven, and then reduce the performance of obtained PMOS transistor.
Along with the integrated level of semiconductor device is more and more higher, the characteristic size of device is more and more less.Therefore, the etched features malformation caused by Tetramethylammonium hydroxide more easily makes performance of semiconductor device decline, and even makes semiconductor device failure.At present, the effective ways still do not solved the problem.
Summary of the invention
The application aims to provide a kind of lithographic method, the method forming groove on a semiconductor substrate, PMOS transistor and preparation method thereof, when adopting tetramethyl ammonium hydroxide solution to etch to solve in prior art, and the problem that device architecture easily deforms.
To achieve these goals, according to an aspect of the application, provide a kind of lithographic method, the method comprises: the step adopting tetramethyl ammonium hydroxide solution to treat etched features under unglazed condition to carry out etching.
Further, in the lithographic method that the application is above-mentioned, tetramethyl ammonium hydroxide solution comprises Tetramethylammonium hydroxide and water, and in tetramethyl ammonium hydroxide solution, the concentration of Tetramethylammonium hydroxide is 2 ~ 4%, is preferably 2.38%.
Further, in the lithographic method that the application is above-mentioned, the etching temperature of tetramethyl ammonium hydroxide solution is 25 ~ 40 DEG C, and etch period is 60 ~ 400s.
Further, in the lithographic method that the application is above-mentioned, treating before etched features carries out the step etched, HF solution is adopted to clean device to be etched, to clean the oxide removed on described device surface to be etched.
Further, in the lithographic method that the application is above-mentioned, HF and H in HF solution
2the volume ratio of O is 1:100 ~ 500, and the cleaning temperature of HF solution is 25 ~ 40 DEG C, and the thickness of the oxide that cleaning is removed is
According to the another aspect of the application, provide a kind of method forming groove on a semiconductor substrate, comprise and adopt tetramethyl ammonium hydroxide solution to carry out etching formation groove to semiconductor substrate, the wherein lithographic method that provides for the application of the method for etching semiconductor substrate.
Further, in the method that the application is above-mentioned, before employing tetramethyl ammonium hydroxide solution etches semiconductor substrate, first adopt dry etching to form a pre-groove on a semiconductor substrate, then adopt tetramethyl ammonium hydroxide solution to carry out etching to form groove further to pre-groove.
Present invention also provides a kind of manufacture method of PMOS transistor, be included on substrate and form groove, and the step of silicon Germanium layer in a groove, the method forming groove on a semiconductor substrate that its further groove is provided by the application is made.
Further, in the manufacture method of the above-mentioned PMOS transistor of the application, also be included in step substrate being formed isolated groove and grid, the step forming isolated groove and grid is carried out after the step of silicon Germanium layer, comprise germanium-silicon layer in the substrate forms the position of grid side formation isolated groove away from wish, and for forming the position formation grid of grid on substrate.
Present invention also provides a kind of PMOS transistor, this PMOS transistor is made by said method.
The technical scheme that application the application provides, treats etched features by adopting tetramethyl ammonium hydroxide solution under unglazed condition and etches, thus define required device.Under unglazed condition, treat etched features etch, the OH in the Tetramethylammonium hydroxide caused by illumination can be improved
-active decline problem, and then the activity relatively improving tetramethyl ammonium hydroxide solution selective etch, thus avoid the excessive deformation of the etched features structure caused because of the activity of tetramethyl ammonium hydroxide solution selective etch.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the SEM photo according to the embodiment of the present application 1 gained PMOS transistor; And
Fig. 2 shows the SEM photo according to the application's comparative example 1 gained PMOS transistor.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.The application is described in detail below in conjunction with the drawings and specific embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
As what introduce in background technology, when adopting tetramethyl ammonium hydroxide solution to etch, device architecture easily deforms.For this problem, present inventor has carried out a large amount of theoretical and experimental studies.Inventor finds in once accidental experimental study, the OH under the condition of illumination in tetramethyl ammonium hydroxide solution
-there is complexing in the foreign ion (such as metal ion) easily and in solution, or combines with the chemical bond (such as H key) of device surface, thus cause OH
-activity decrease, make the decline of the activity of tetramethyl ammonium hydroxide solution selective etch, so cause through etching formed device architecture deform.
In order to solve the problem, present inventor proposes a kind of lithographic method.This lithographic method comprises: the step adopting tetramethyl ammonium hydroxide solution to treat etched features under unglazed condition to carry out etching.Under unglazed condition, treat etched features etch, the OH in the Tetramethylammonium hydroxide caused by illumination can be improved
-active decline problem, and then the activity relatively improving tetramethyl ammonium hydroxide solution selective etch, thus avoid the excessive deformation of the etched features structure caused because of the activity of tetramethyl ammonium hydroxide solution selective etch.In above-mentioned lithographic method, " unglazed " for intensity of illumination be 0Lx lower than 0.1Lx() or equal the situation of 0Lx.The condition of above-mentioned intensity of illumination can improve the OH in the Tetramethylammonium hydroxide caused by illumination
-active decline problem, and then the activity relatively improving tetramethyl ammonium hydroxide solution selective etch, thus avoid the excessive deformation of the etched features structure caused because of the activity of tetramethyl ammonium hydroxide solution selective etch.The activity of the selective etch of above-mentioned tetramethyl ammonium hydroxide solution is relevant with the composition of tetramethyl ammonium hydroxide solution.In a preferred embodiment, tetramethyl ammonium hydroxide solution comprises Tetramethylammonium hydroxide and water, and Tetramethylammonium hydroxide concentration is 2 ~ 4%, is more preferably 2.38%.The tetramethyl ammonium hydroxide solution with above-mentioned composition has higher selective etch activity, and then avoids the distortion of the device architecture that etching is formed.
In above-mentioned lithographic method, those skilled in the art can select the etch technological condition of above-mentioned tetramethyl ammonium hydroxide solution according to actual process demand, such as temperature and time etc.In a preferred embodiment, carry out in the step etched treating etched features, etching temperature is 25 ~ 40 DEG C, and etch period is 60 ~ 400s.Above-mentioned etching technics carries out under normal temperature condition, not only energy-conservation, and the etching under above-mentioned process conditions can not cause damage to the device formed.
Treat before etched features carries out the step etched at the above-mentioned tetramethyl ammonium hydroxide solution of employing, HF solution can also be adopted to clean device to be etched.HF solution can react with the oxide on device surface to be etched, and then is peeled off from device surface to be etched by oxide.Therefore, after adopting HF solution to clean device to be etched, the cleanliness factor of device surface to be etched is improved, and then is conducive to contacting of tetramethyl ammonium hydroxide solution and device to be etched in subsequent etching process, and improves the etching efficiency of tetramethyl ammonium hydroxide solution further.
In above-mentioned lithographic method, those skilled in the art according to prior art, can select the process conditions that above-mentioned HF cleans, the concentration of such as HF, the temperature and time etc. of cleaning.In a preferred embodiment, HF and H in HF solution
2the volume ratio of O is 1:100 ~ 500, and the cleaning temperature of HF solution is 25 ~ 40 DEG C, and the thickness of the oxide that cleaning is removed is
above-mentioned cleaning is carried out under normal temperature condition, and the cleaning with above-mentioned process conditions can not cause damage to the device formed.
The mode of above-mentioned HF cleaning can be infusion method or rotary spray method.Adopt infusion method treat etched features clean time, a kind of optional mode comprises: by HF and H
2the volume ratio of O is that the HF solution of 1:100 ~ 500 is placed in rinse bath, and device to be etched, at 25 ~ 40 DEG C, is then placed in HF solution and cleans by the temperature controlling HF solution in rinse bath, and the thickness of the oxide that cleaning is removed is
adopt rotary spray method treat etched features clean time, a kind of optional mode comprises: by HF and H
2the volume ratio of O is that the HF solution spraying of 1:100 ~ 500 is on the surface of device to be etched, and make HF dissolution homogeneity be distributed in the surface of device to be etched by low speed rotation (300 ~ 500rpm), clean under temperature is 25 ~ 40 DEG C of conditions, the thickness of the oxide that cleaning is removed is
Simultaneously, present invention also provides a kind of method forming groove on a semiconductor substrate, comprise and adopt tetramethyl ammonium hydroxide solution to carry out etching to semiconductor substrate and form the step of groove, wherein the lithographic method that provides for the application of the method for etching semiconductor substrate.The groove structure obtained according to the method does not deform, and then obtains the groove meeting technological requirement.
Above-mentioned semiconductor substrate can be monocrystalline silicon, silicon-on-insulator (SOI) or germanium silicon (SiGe) etc., and semiconductor substrate is at least formed a kind of device, such as shallow trench, grid, potential well or interconnection layer etc.Those skilled in the art according to actual process demand, above-mentioned semiconductor substrate can form device.
Before the above-mentioned tetramethyl ammonium hydroxide solution of employing etches semiconductor substrate, dry etching first can be adopted to form a pre-groove on a semiconductor substrate, then adopt tetramethyl ammonium hydroxide solution to carry out etching to form groove further to pre-groove.By the pre-groove of above-mentioned formation and the step etching pre-groove, the groove with required form can be obtained, to carry out follow-up technique.
Present invention also provides a kind of manufacture method of PMOS transistor.This manufacture method comprises: on substrate, form groove, then silicon Germanium layer in a groove, the method forming groove on a semiconductor substrate that the method wherein forming above-mentioned groove provides for the application.The groove structure obtained in PMOS transistor according to the method does not deform, and then obtains the groove meeting technological requirement, and obtains the PMOS transistor reaching design performance.
The step forming above-mentioned groove comprises: be dry-etched on substrate in employing and form a pre-groove (such as the pre-groove of " U " shape), then adopts the pre-groove of tetramethyl ammonium hydroxide solution to " U " shape to carry out etching to form groove (such as the groove of " ∑ " shape) further.
The manufacture method of above-mentioned PMOS transistor is also included in step substrate being formed isolated groove and grid.Substrate can be made into hundred thousands of devices simultaneously, in order to each device independent of other devices function, can make not interfere with each other between each device, therefore need to form isolated groove in the substrate.The method of above-mentioned formation isolated groove is state of the art, does not repeat them here.Above-mentioned grid can comprise the gate dielectric, gate material layers and the grid hard masking layer that stack gradually.Wherein, gate dielectric includes but not limited to adopt oxide, such as silicon dioxide layer; Gate material layers includes but not limited to adopt in polysilicon layer, metal level, conductive metal nitride layer, conductive metal oxide layer and metal silicide layer; Metal level includes but not limited to adopt tungsten, nickel or titanium.Those skilled in the art according to actual process demand, can select the structure &processes forming above-mentioned grid.
In a kind of preferred implementation of the application, the step forming above-mentioned isolated groove and grid is carried out after the step of silicon Germanium layer, and the step forming isolated groove and grid comprises: germanium-silicon layer forms isolated groove away from the side of the position for forming grid in the substrate; And the position for forming grid on substrate forms grid.Form the mode of isolated groove and grid after this first formation germanium-silicon layer, the quality of prepared germanium-silicon layer can be improved, and then improve the performance of PMOS transistor.
Present invention also provides a kind of PMOS transistor.The manufacture method of the PMOS transistor that this PMOS transistor adopts the application to provide is made.This PMOS transistor further groove forms by adopting tetramethyl ammonium hydroxide solution to etch under unglazed condition, thus can improve the problem that groove structure deforms.Meanwhile, by forming the mode of isolated groove and grid after first forming germanium-silicon layer, the quality of prepared germanium-silicon layer can be improved, and then improve the performance of PMOS transistor.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, provide these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
Embodiment 1
Present embodiments provide a kind of method forming groove in PMOS transistor, comprise the following steps:
By plasma etching industrial etched substrate, form the pre-groove of " U " shape.The process conditions of above-mentioned etching are: with CF
4and CHF
3for etching gas, sputtering power is 1000 watts, and etching temperature is 240 DEG C, and etch period is 120 seconds.
Wet etching is carried out to the pre-groove of " U " shape, forms the groove of " ∑ " shape.The process conditions of above-mentioned wet etching are: using tetramethyl ammonium hydroxide solution as etching agent, and wherein the concentration 2.0% of Tetramethylammonium hydroxide, etches under unglazed condition, and the temperature of etching is 40 DEG C, and the time of etching is 60s.
Embodiment 2
Present embodiments provide a kind of method forming groove in PMOS transistor, comprise the following steps:
By plasma etching industrial etched substrate, form the pre-groove of " U " shape.The process conditions of above-mentioned etching are: with CF
4and CHF
3for etching gas, sputtering power is 1000 watts, and etching temperature is 240 DEG C, and etch period is 120 seconds.
Adopt the pre-groove of " U " shape after HF solution etching to remove the oxide of groove surfaces, the process conditions of cleaning are: HF and H in HF solution
2the volume ratio of O is 1:100, and the temperature of cleaning is 25 DEG C, and the thickness of the oxide that cleaning is removed is
Wet etching is carried out to the pre-groove of " U " shape, forms the groove of " ∑ " shape.The process conditions of above-mentioned wet etching are: using tetramethyl ammonium hydroxide solution as etching agent, and wherein the concentration of Tetramethylammonium hydroxide is 2.38%, etches under unglazed condition, and the temperature of etching is 25 DEG C, and the time of etching is 200s.
Embodiment 3
Present embodiments provide a kind of method forming groove in PMOS transistor, comprise the following steps:
By plasma etching industrial etched substrate, form the pre-groove of " U " shape.The process conditions of above-mentioned etching are: with CF
4and CHF
3for etching gas, sputtering power is 1000 watts, and etching temperature is 240 DEG C, and etch period is 120 seconds.
Adopt the pre-groove of " U " shape after HF solution etching to remove the oxide of groove surfaces, the process conditions of cleaning are: HF and H in HF solution
2the volume ratio of O is 1:500, and the temperature of cleaning is 40 DEG C, and the thickness of the oxide that cleaning is removed is
Wet etching is carried out to the pre-groove of " U " shape, forms the groove of " ∑ " shape.The process conditions of above-mentioned wet etching are: using tetramethyl ammonium hydroxide solution as etching agent, and wherein the concentration 4.0% of Tetramethylammonium hydroxide, etches under unglazed condition, and the temperature of etching is 30 DEG C, and the time of etching is 400s.
Embodiment 4
Present embodiments provide a kind of method forming groove in PMOS transistor, comprise the following steps:
By plasma etching industrial etched substrate, form the pre-groove of " U " shape.The process conditions of above-mentioned etching are: with CF
4and CHF
3for etching gas, sputtering power is 1000 watts, and etching temperature is 240 DEG C, and etch period is 120 seconds.
Adopt the pre-groove of " U " shape after HF solution etching to remove the oxide of groove surfaces, the process conditions of cleaning are: HF and H in HF solution
2the volume ratio of O is 1:510, and the temperature of cleaning is 23 DEG C, and the thickness of the oxide that cleaning is removed is
Wet etching is carried out to the pre-groove of " U " shape, forms the groove of " ∑ " shape.The process conditions of above-mentioned wet etching are: using tetramethyl ammonium hydroxide solution as etching agent, and wherein the concentration 4.2% of Tetramethylammonium hydroxide, etches under unglazed condition, and the temperature of etching is 23 DEG C, and the time of etching is 410s.
Comparative example 1
Present embodiments provide a kind of method forming groove in PMOS transistor, comprise the following steps:
By plasma etching industrial etched substrate, form the pre-groove of " U " shape.The process conditions of above-mentioned etching are: with CF
4and CHF
3for etching gas, sputtering power is 1000 watts, and etching temperature is 240 DEG C, and etch period is 120 seconds.
Adopt the pre-groove of " U " shape after HF solution etching to remove the oxide of groove surfaces, the process conditions of cleaning are: HF and H in HF solution
2the volume ratio of O is 1:500, and the temperature of cleaning is 40 DEG C, and the thickness of the oxide that cleaning is removed is
Wet etching is carried out to the pre-groove of " U " shape, forms the groove of " ∑ " shape.The process conditions of above-mentioned wet etching are: using tetramethyl ammonium hydroxide solution as etching agent, and wherein the concentration 4.0% of Tetramethylammonium hydroxide, etches under the condition having light, and the temperature of etching is 30 DEG C, and the time of etching is 400s.
Test:
The microscopic appearance of the groove in adopt scanning electron microscopy (SEM) to observe PMOS transistor that embodiment 1 to 4 and comparative example 1 obtain.Wherein the result of embodiment 1 and comparative example 1 as depicted in figs. 1 and 2.Then the SEM photo by obtaining calculate embodiment 1 to 4 and comparative example 1 obtain the limit angle of groove, embodiment 1 to 4 and comparative example 1 obtain the limit angle of groove, correlated results asks for an interview table 1.
Fig. 1 obtains by the embodiment of the present application 1 microscopic appearance of PMOS transistor further groove, and Fig. 2 obtains by the application's comparative example 1 microscopic appearance of PMOS transistor further groove.As can be seen from Fig. 1 and Fig. 2, the groove that embodiment 1 obtains is in " ∑ " shape, and the limit angle of groove is 113.3 °; The groove that comparative example 1 obtains is level and smooth arc-shaped, and the angle on groove limit is 132.6 °, is obviously greater than the limit angle of the groove that embodiment 1 obtains.
Table 1
| The limit angle of groove/° | |
| Embodiment 1 | 113.3 |
| Embodiment 2 | 112.2 |
| Embodiment 3 | 112.6 |
| Embodiment 4 | 112.9 |
| Comparative example 1 | 132.6 |
The limit angle data of the groove that table 1 obtains for the embodiment of the present application 1 to 4 and comparative example 1.As can be seen from Table 1, the limit angle of the groove obtained by comparative example 1 is 132.6 °, differs greatly with the standard edge angle (being about 112 °) of " ∑ " connected in star.And the limit angle of the groove that the embodiment of the present application 1 to 4 obtains is at 112.2 ~ 113.3 °, compares with the limit angle (being about 112 °) of " ∑ " connected in star of standard and conform to, substantially do not deform.
As can be seen from the above description, the application's the above embodiments achieve following technique effect: the application adopts tetramethyl ammonium hydroxide solution to treat etched features and etches under unglazed condition, thus defines required semiconductor device.Under unglazed condition, treat etched features etch, the OH in the Tetramethylammonium hydroxide caused by illumination can be improved
-active decline problem, and then the activity relatively improving tetramethyl ammonium hydroxide solution selective etch, thus avoid the excessive deformation of the etched features structure caused because of the activity of tetramethyl ammonium hydroxide solution selective etch.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (10)
1. a lithographic method, is characterized in that, described method comprises: the step adopting tetramethyl ammonium hydroxide solution to treat etched features under unglazed condition to carry out etching.
2. lithographic method according to claim 1, is characterized in that, described tetramethyl ammonium hydroxide solution comprises Tetramethylammonium hydroxide and water, and in described tetramethyl ammonium hydroxide solution, the concentration of Tetramethylammonium hydroxide is 2 ~ 4%, is preferably 2.38%.
3. lithographic method according to claim 2, is characterized in that, in the step etched described device to be etched, the etching temperature of described tetramethyl ammonium hydroxide solution is 25 ~ 40 DEG C, and etch period is 60 ~ 400s.
4. lithographic method according to claim 1, is characterized in that, adopts HF solution to clean described device to be etched before the step etched described device to be etched, to clean the oxide removed on described device surface to be etched.
5. lithographic method according to claim 4, is characterized in that, HF and H in described HF solution
2the volume ratio of O is 1:100 ~ 500, and the cleaning temperature of described HF solution is 25 ~ 40 DEG C, and the thickness of preferred removed described oxide is
6. one kind forms the method for groove on a semiconductor substrate, comprise and adopt tetramethyl ammonium hydroxide solution to carry out described semiconductor substrate etching the step forming described groove, it is characterized in that, etch the lithographic method of method according to any one of claim 1 to 5 of described semiconductor substrate.
7. method according to claim 6, it is characterized in that, before the described tetramethyl ammonium hydroxide solution of employing etches described semiconductor substrate, first adopt to be dry-etched on described semiconductor substrate and form a pre-groove, then adopt described tetramethyl ammonium hydroxide solution to carry out etching to form described groove further to described pre-groove.
8. a manufacture method for PMOS transistor, is included on substrate and forms groove, and in described groove the step of silicon Germanium layer, it is characterized in that, described groove is made by the method described in claim 6 or 7.
9. manufacture method according to claim 8, is characterized in that, also comprises the step forming isolated groove and grid over the substrate, and the step of described formation isolated groove and grid is carried out after the step of the described germanium-silicon layer of deposition, comprising:
In described substrate, described germanium-silicon layer forms described isolated groove away from the side of the position for forming described grid;
Position over the substrate for forming described grid forms described grid.
10. a PMOS transistor, is characterized in that, is made by the manufacture method described in claim 8 or 9.
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| CN102810480A (en) * | 2011-06-02 | 2012-12-05 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacture method |
| CN103594366A (en) * | 2012-08-14 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | A transistor forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810480A (en) * | 2011-06-02 | 2012-12-05 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacture method |
| CN103594366A (en) * | 2012-08-14 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | A transistor forming method |
Non-Patent Citations (1)
| Title |
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| J.T.L.THONG ETC: "TMAH etching of silicon and the interaction of etching parameters", 《SENSOR AND ACTUATORS A：PHYSICAL》 * |
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