CN104934310A - Polycrystalline silicon sample etching device - Google Patents
Polycrystalline silicon sample etching device Download PDFInfo
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- CN104934310A CN104934310A CN201510368443.0A CN201510368443A CN104934310A CN 104934310 A CN104934310 A CN 104934310A CN 201510368443 A CN201510368443 A CN 201510368443A CN 104934310 A CN104934310 A CN 104934310A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention relates to a polycrystalline silicon sample etching device. The polycrystalline silicon sample etching device comprises a sealed barrel, a connection rod device, a sample support and a sample bearing table, wherein a protective tower is arranged at the middle of the barrel, the connection rod device is perpendicular to the bottom of the barrel and is rotatably arranged in the protective tower, the polycrystalline silicon sample etching device also comprises partition plates, the partition plates are connected with the outer wall of the protective tower and are perpendicular to the bottom of the barrel, the space in the barrel is divided into more than two working regions by the partition plates, the connection rod device, the sample support and the sample bearing table are sequentially connected, and a circle of window is formed on the outer wall of the protective tower so that the sample support can extend into the working regions from the protective tower and can rotate with the connection rod device without being blocked by the outer wall of the protective tower. In the polycrystalline silicon sample etching device, the front end of the support is controlled to ascend and descend around a rotary shaft by the connection rod device, so that a sample on the sample bearing table is controlled to be immersed in an etching solution. The sample etching process occurs in a fully-sealed environment provided by the sealed barrel, and thus, the damage to the health of an operator due to volatilization of the etching solution and the like is avoided.
Description
Technical field
The present invention relates to polysilicon detection field, particularly relate to the etching device that polysilicon detects sample.
Background technology
The detection of polysilicon grain size is the important test item of crystallization process, and the usual needs of the multi-crystalline silicon sample used in detecting etch obvious crystal boundary by the method for etching, electronic scanner microscope (SEM) is then utilized to observe the grain size of sample.The quality of crystal boundary etching can have a strong impact on the result of detection, makes the judgement of process results produce deviation.And for the time control is relatively strict of crystal boundary etching, according to different sample situations and solution ratio, there is different time restrictions, usually control between several seconds to tens seconds.
Use at present usually tweezers to clamp sample to put into solution and soak, the Non-follow control time, but this way easily goes wrong: sample is usually less, not easily be affectedly bashful, easily occur falling to the situation held in the beaker of solution, sample is flooded and exceeds setting-up time, cause film separation specimen breakdown; Etching liquid due to use has strong oxidizing property and severe toxicity is volatile, and unshielded experimental provision can damage the healthy of operating personnel, causes serious experiment accident.
Summary of the invention
The object of the invention is to avoid the volatilization because of etching liquid in multi-crystalline silicon sample preparation process to cause damage to human body, for achieving the above object, the invention provides a kind of multi-crystalline silicon sample etching device.
A kind of multi-crystalline silicon sample etching device, comprise sealed barrel, linkage, sample holder and sample stage, it is characterized in that, described staving central authorities are provided with protection tower, and described linkage is perpendicular to being arranged in described protection tower bottom staving rotationally; Described multi-crystalline silicon sample etching device also comprises and to be connected with the outer wall of described protection tower and perpendicular to the dividing plate bottom staving, the spaced apart in staving is formed plural working region by described dividing plate; Described linkage, sample holder and sample stage connect successively, and the outer wall of described protection tower offers a circle window, put in working region and can rotate with linkage and can not hinder by protected tower outer wall for sample holder in protection tower; Described dividing plate offers dividing plate breach, can pass described dividing plate breach from a working region to another working region when rotating with described linkage for sample holder and sample stage, described linkage can control the lifting of described sample holder.
Wherein in an embodiment, the quantity of described working region is three, be set to reservoir respectively, ablution groove and dry slot, described reservoir is provided with the through hole imported and exported for solution on bucket outer wall, described ablution groove sidewall is provided with cleaning shower nozzle and liquid outlet, and described dry slot is provided with gas tip and air exit.
Wherein in an embodiment, described sample holder comprises support front end, connect the back-end support of described linkage and connect the rotating shaft of described back-end support and support front end, described sample stage is located at described support front end, described linkage is elevated around described rotating shaft for controlling described support front end, and the angle of described sample stage and described support front end is 45 degree and arranges to 60 degree.
Wherein in an embodiment, described sample stage is detachable connection with described support front end, and the top of described staving is provided with folding lid, for picking and placeing described sample stage.
Wherein in an embodiment, folding is covered on the top of described dry slot.
Wherein in an embodiment, also comprise the rotating base be located in described protection tower, described linkage is located on described rotating base, and described rotating base rotates for driving described linkage.
Wherein in an embodiment, described linkage top is also provided with carrying handle, drives described sample holder to promote to pick and place described sample stage for upwards drawing high described linkage.
Wherein in an embodiment, described linkage comprises timing unit and actuating unit, described timing unit is used for controlling described actuating unit drive described rotating shaft to rotate when arriving the moment of setting, and controls described rotating base and drive described linkage to rotate.
Wherein in an embodiment, described staving is column barrel or polygon bucket.
The present invention also provides another kind of multi-crystalline silicon sample etching device.
A kind of multi-crystalline silicon sample etching device, comprise sealed barrel, linkage, sample holder and sample stage, it is characterized in that, described staving central authorities are provided with protection tower, and described linkage is perpendicular to being liftably arranged in described protection tower bottom staving, described multi-crystalline silicon sample etching device also comprises the dividing plate be connected with the outer wall of described protection tower, space in the vertical direction in staving is separated the plural working region of formation by described dividing plate, described linkage, sample holder and sample stage connect successively, the outer wall of described protection tower offers the window to the extension bottom staving, in protection tower, put in working region for sample holder and can not can hinder by protected tower outer wall with linkage lifting, described dividing plate offers dividing plate breach, described dividing plate breach can be passed from a working region to another working region with during described linkage lifting for sample holder and sample stage, described dividing plate indentation, there is correspondingly provided with cover plate to be opened/closed, for passing through dividing plate breach described in the opening and closing of front and back at sample stage.
Above-mentioned multi-crystalline silicon sample etching device, by the lifting of linkage Quality control support, thus whether the sample on Quality control microscope carrier impregnated in etching liquid, and when linkage lifting sample holder, namely sample leaves etching liquid, completes sample etching.Under sample etching process occurs in the hermetically sealed environment provided by sealed barrel, avoid the health of human body of the reason infringement operating personnel such as etching liquid volatilization, eliminate the risk had an accident.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will become more clear.Reference numeral identical in whole accompanying drawing indicates identical part, and does not deliberately draw accompanying drawing by actual size equal proportion convergent-divergent, focuses on purport of the present invention is shown.
Fig. 1 is the structural representation of multi-crystalline silicon sample etching device in the embodiment of the present invention 1;
Fig. 2 is the structure vertical view of multi-crystalline silicon sample etching device in the embodiment of the present invention 1;
Fig. 3 is the diaphragm structure schematic diagram of multi-crystalline silicon sample etching device in the embodiment of the present invention 1;
Fig. 4 is the structural representation of sample holder in the embodiment of the present invention 1;
Fig. 5 is the vertical view of multi-crystalline silicon sample etching device in the embodiment of the present invention 2;
Fig. 6 is the structural representation of multi-crystalline silicon sample etching device in the embodiment of the present invention 3;
Fig. 7 is the vertical view of multi-crystalline silicon sample etching device in the embodiment of the present invention 3;
Fig. 8 is the diaphragm structure schematic diagram of multi-crystalline silicon sample etching device in the embodiment of the present invention 3;
Fig. 9 is the vertical view of multi-crystalline silicon sample etching device in the embodiment of the present invention 4.
Embodiment
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.First-selected embodiment of the present invention is given in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, the object of these embodiments is provided to be make to disclosure of the present invention more thoroughly comprehensively.
It should be noted that, when element is called as " being fixed on " another element, directly can there is element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be directly connected to another element and be combined as a whole with it, or may there is centering elements simultaneously.When an element is considered to " be connected " with another element, it can spatially see it is communicate with each other with another element.Term as used herein " is located at ", " interior ", " outward ", " up and down " and similar statement just for illustrative purposes.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present invention understand usually.The object of term used in the description of the invention herein just in order to describe specific embodiment, is not intended to be restriction the present invention.Term as used herein " and/or " comprise arbitrary and all combinations of one or more relevant Listed Items.
Embodiment 1:
Fig. 1 is the structural representation of multi-crystalline silicon sample etching device in embodiment 1; as shown in Figure 1; multi-crystalline silicon sample etching device comprises sealed barrel 100, linkage 110, sample holder 130 and sample stage 140; staving 100 central authorities are provided with protection tower 120, and linkage 110 is perpendicular to being arranged at rotationally bottom staving 100 in protection tower 120.
As shown in Figure 2, multi-crystalline silicon sample etching device also comprise with protection tower 120 outer wall be connected and perpendicular to the dividing plate 300 bottom staving 100, the spaced apart in staving 100 formed plural working region.In the present embodiment, the quantity of working region is three, be set to reservoir 400 respectively, ablution groove 500 and dry slot 600, reservoir 400 on bucket outer wall, offer the through hole 410 imported and exported for solution, be provided with cleaning shower nozzle 510 and liquid outlet 520 in ablution groove 500, in dry slot 600, be provided with gas tip 610 and air exit 620.See Fig. 1; linkage 110, sample holder 130 and sample stage 140 connect successively; the outer wall of protection tower 120 offers a circle window 170, puts in working region and can rotate with linkage 110 and can not protected tower 120 outer wall hinder for sample holder 130 in protection tower 120.See Fig. 3, dividing plate 300 offers dividing plate breach 50, when rotating with linkage 110 for sample holder 130 and sample stage 140, another working region can be arrived from a working region through dividing plate breach 50.
Please refer to Fig. 4, sample holder 130 comprises the rotating shaft 134 of the back-end support 136 of connection linkage device 110, support front end 132 and connection bracket rear end 136 and support front end 132.Sample stage 140 is located on support front end 132, linkage 110 can control support front end 132 134 liftings around the shaft, thus whether the sample 20 on Quality control microscope carrier 140 is positioned under etching liquid liquid level line 30, and (liquid level of each working region solution will lower than liquid level line 30, prevent overflow from polluting in other working regions), when sample holder 130 is adjusted to straightened condition, namely sample stage 140 leaves etching liquid, completes sample etching.
In the embodiment shown in fig. 1, multi-crystalline silicon sample etching device also comprises the rotating base 210 be located in protection tower 120, and linkage 110 is located on rotating base 210, and rotating base 210 rotates for drivening rod device 110.Rotating base 210 can after setting fixed speed, and drivening rod device 110 rotates, and completes Sample Preparation Procedure.In other embodiments, also rotating base 210 can not being set, by carrying out manual rotation to linkage 110, also can completing the preparation of sample.
In the embodiment shown in fig. 1, sample stage 140 is connected for detachable with support front end 132, in the Sample Preparation Procedure of reality, sample 20 is needed to be placed on sample stage 140, at this moment sample stage 140 is needed to pull down from support front end 132, sample 20 is fixed on sample stage 140, then sample stage 140 is reinstalled on support front end 132.Be understandable that, detachable connection comprises and uses connecting portion or fixed part to connect or fixed sample microscope carrier 140 and support front end 132, comprises magnetic and connects, is threaded.In practical operation, be understandable that, sample holder 130 and sample stage 140 can be set to multiple structure side by side, namely plural sample stage 140 is set on a sample holder 130, or two or more sample holder 130 is set on linkage 110, each sample holder 130 is arranged two and above sample stage 140, multiple sample can be etched so simultaneously, raise the efficiency.
In the embodiment shown in fig. 1, linkage 110 top is also provided with carrying handle 200, drives sample holder 130 to promote to pick and place sample stage 140 for upwards drawing high linkage 110.Be understandable that, carrying handle 200 can be set to be convenient to the ellipse of people's grasped, circle and other various shapes.
In the embodiment shown in fig. 1, linkage 110 comprises timing unit and actuating unit, timing unit is used for driving rotating shaft 134 to rotate in the moment time control braking force mechanism of arrival setting, and control rotating base 210 drivening rod device 110 rotates when arriving the moment of setting.In practical operation, for the ease of the use of timing unit, timing unit is located at the edge of carrying handle 200, and gear is set in rotating shaft 134.
After setting the time by timing unit, control support front end 132 be bent to fixed angle downwards by linkage 110, sample 20 is under liquid level line 30, and timing unit starts timing simultaneously.Timing arrives, and timing unit support front end 132 is upwards lifted, and whole sample holder 130 becomes straight, sample 20 leaves solution, thus realize the accurate control of sample etch period, ensureing etching effect, avoiding the loss occurring causing sample because etching poor quality.
Reservoir 400 for depositing the etching solution for detecting polysilicon grain size, such as match section (secco) etching solution.Reservoir 400 offers through hole 410 on bucket outer wall, for importing and exporting secco etching solution, is understandable that, through hole 410 is provided with corresponding solution switching device, for conducting when importing or derivation solution or closed through hole 410.
Ablution groove 500, for etching the surface cleaning of rear sample 20, is provided with cleaning shower nozzle 510 in ablution groove 500, for spraying pure water, for flushing sample 20 surface, then discharged by the liquid outlet 520 of bucket outer wall.Be understandable that, in practical operation, the flow that cleaning shower nozzle 510 sprays pure water can regulate, sample 20 surface washing to be totally as the criterion.
Wherein in an embodiment, sample stage 140 is 45 degree with the angle of support front end 132 and arranges to 60 degree.Such as sample stage 140 is arranged in 45 degree with support front end 132, and when ensureing that cleaning shower nozzle 510 sprays pure water cleaning sample 20, pure water covers all sites on sample 20 surface, ensure that comprehensive pure water sprays; And for example sample stage 140 is arranged in 60 degree with support front end 132, and when ensureing that cleaning shower nozzle 510 sprays pure water cleaning sample 20, the flow velocity on pure water cleaning sample 20 surface is even, ensure that the uniformity that pure water sprays; For another example sample stage 140 is arranged in 50 degree with support front end 132, both ensure that the uniformity of cleaning in turn ensure that the flow velocity of pure water.Be understandable that, if sample stage 140 is perpendicular to support front end 132, then cleans shower nozzle 510 when pure water being sprayed on sample 20 surface, there will be the surperficial flow rate of water flow of sample 20 too fast or spray incomplete situation, cause etching liquid to remain, affect the etching effect of sample 20.
Dry slot 600, for drying sample 20, is provided with gas tip 610 and air exit 620 in dry slot 600.Gas tip 610 is for the adjustable dry gas of the surperficial expulsion pressure of sample 20, and such as air or nitrogen, with rapid draing sample 20.Be understandable that, in actual mechanical process, gas tip 610 also can be set and eject heated air, so that drying sample 20 faster.Air exit 620, for discharging a certain amount of gas, keeps the pressure in sealed barrel 100 to be unlikely to excessive, can control the content of acidic gas in air in dry slot 600 simultaneously, make its content extremely low.
As shown in Figure 2, in the present embodiment, dry slot 600 top cover is provided with folding lid 700, and its shape and sample holder 130 mating shapes, for picking and placeing sample stage 140.Be understandable that, in the top cover of reservoir 400, ablution groove 500 and dry slot 600, all folding lid 700 can be set.Because the object arranging folding lid 700 picks and places sample stage 140, if folding lid 700 is located at dry slot 600 top, then not easily sample 20 is polluted when picking and placeing sample stage 140.Folding lid 700 not only may be used for picking and placeing sample stage 140, can also have other functions.The folding lid 700 being such as arranged at reservoir 400 top can be used for the etching liquid level condition of observing at any time in reservoir 400, thus controls the amount that through hole 410 selects to import or derive solution; The folding lid 700 being arranged at ablution groove 500 top can be used for the cleaning situation of observing sample 20 surface at any time, thus controls the flow that cleaning shower nozzle 510 sprays pure water, to ensure the uniformity of cleaning sample 20 surface.
Wherein in an embodiment, reservoir 400 and ablution groove 500, dividing plate breach 50 between dry slot 600 and reservoir 400 is provided with the cover plate that can raise, after sample holder 130 passes through, namely closes breach 50, prevent the etching solution in reservoir 400 from evaporating in other grooves.Be understandable that, on dividing plate breach 50 arrange cover plate can be suspension type cover plate, namely cover plate one sidewall pass through fixed part (such as spring mountings) be fixed on breach 50, sample holder 130 by time cover plate open, by rear, cover plate returns to original position and closes breach 50.Cover plate also can be telescopic cover plate, as offered groove at dividing plate 300 on the inwall of breach 50, cover plate is connected to groove inwall by telescoping mechanism, when sample holder 130 passes through, telescoping mechanism controls in cover plate income groove, after sample holder 130 passes through, telescoping mechanism controls cover plate and stretches out in groove and close breach 50.
As shown in Figure 3, the liquid level of each groove solution lower than liquid level line 30, will prevent solution from spilling in other grooves and pollutes.
The etching liquid used due to multi-crystalline silicon sample etching device generally has extremely strong oxidizability, and in this implementation column, staving 100 uses the material of anti-soda acid to make, such as fiberglass, stainless steel, glass, pottery, anti-soda acid plastics etc.Be understandable that, the etching liquid kind that should use according to reality is suitably selected acid-proof base material.
In this implementation column, protection tower 120, sample stage 140, support front end 132 and dividing plate 300 also all use the material of anti-soda acid to make.
The whole sample etching process of multi-crystalline silicon sample etching device of the present invention comprises:
Sample 20 is installed on sample stage 140.
The folding lid 700 that the top of opening staving 100 is arranged, uses carrying handle 200 upwards to draw high linkage 110 and drives sample holder 130 to promote sample stage 140.
Sample stage 140 is taken out from support front end 132, sample 20 is fixed on after on sample stage 140, sample stage 140 is retightened on support front end 132, covers folding lid 700.
Drive rotating base 210, sample holder 130 arrives reservoir 400 by dividing plate breach 50.
Set etch period by timing unit, actuating unit drives rotating shaft 134 to rotate, and sample holder 130 bends downwards, and sample 20 is dipped into below liquid level of solution and starts etching.
Timing time arrives, and after receiving the signal that timing unit sends, sample holder 130 is adjusted to straightened condition by actuating unit, and sample 20 leaves etching liquid, completes etching.
Drive rotating base 210, sample holder 130 arrives cleaning shower nozzle 510 place of working region as ablution groove 500 by dividing plate breach 50, and spray pure water is to the fixed time.
Drive rotating base 210, sample holder 130 arrives working region as dry slot 600 gas tip 610 place by dividing plate breach 50, carries out the process of gas jet drying, completes the drying of sample 20 after the fixed time.
The folding lid 700 that the top of opening staving 100 is arranged, takes out sample 20, completes the preparation of whole sample 20.
Above-mentioned multi-crystalline silicon sample etching device, control support front end 132 134 liftings around the shaft by linkage 110, thus whether the sample 20 on Quality control microscope carrier 140 impregnated in etching liquid, when whole sample holder is adjusted to straightened condition, namely sample leaves etching liquid, completes sample etching.Under sample etching process occurs in the hermetically sealed environment provided by sealed barrel, avoid the health of human body of the reason infringement operating personnel such as etching liquid volatilization, eliminate the risk had an accident.
Embodiment 2:
Fig. 5 is the vertical view of multi-crystalline silicon sample etching device in the embodiment of the present invention 2, and the difference of itself and embodiment 1 is, in embodiment 1, staving 100 is hexagon bucket, and in embodiment 2 is column barrel.Be understandable that, in other embodiments, as long as sealing bucket, staving 100 also can be the polygon bucket of other shapes, such as pentagon bucket, octagon bucket etc.In embodiment 2, columniform staving 100 is easier to processing relative to the hexagon bucket in embodiment 1, but embodiment 1 median septum 300 can be fixed on bight, is therefore beneficial to the processing of dividing plate 300 with fixing.
Embodiment 3:
Fig. 6 is the structural representation of multi-crystalline silicon sample etching device in embodiment 3.Multi-crystalline silicon sample etching device comprises sealed barrel 100, linkage 110, sample holder 130 and sample stage 140.Staving 100 central authorities are provided with protection tower 120; linkage 110 is perpendicular to being liftably arranged in protection tower 120 bottom staving 110; multi-crystalline silicon sample etching device also comprises the dividing plate 310 be connected with the outer wall of protection tower 120, is separated by the space in the vertical direction in staving 100 and forms plural working region.Linkage 110, sample holder 130 and sample stage 140 connect successively; the outer wall of protection tower 120 offers the window 180 extended bottom staving 100, to extend in working region and can be elevated with linkage 110 and can not hinder by protected tower 120 outer wall for sample holder 130 in protection tower 120.Please also refer to Fig. 8, dividing plate 310 offers dividing plate breach 60, when being elevated with linkage 110 for sample holder 130 and sample stage 140, another working region can be arrived from a working region through dividing plate breach 60.Dividing plate breach 60 inside is provided with the cover plate that can raise, for passing through front and back opening and closing dividing plate breach 60 at sample stage 140.Sample holder 130 comprises the rotating shaft 134 of the back-end support 136 of connection linkage device 110, support front end 132 and connection bracket rear end 136 and support front end 132, sample stage 140 is located on support front end 132, and linkage 110 can control support front end 132 134 liftings around the shaft.
As shown in Figure 6, the working region quantity of multi-crystalline silicon sample etching device is three, be set to reservoir 400 respectively, ablution groove 500 and dry slot 600, reservoir 400 on bucket outer wall, offer the through hole 410 imported and exported for solution, be provided with cleaning shower nozzle 510 and liquid outlet 520 in ablution groove 500, in dry slot 600, be provided with gas tip 610 and air exit 620.
In the present embodiment, linkage 110 also comprises elevating mechanism, is elevated for driving sample holder 130.
As shown in Figure 6, bottom dividing plate 310 and staving 100, the plane at place is at an angle is obliquely installed, for the sample on sample stage 140 when entering ablution groove 500 and cleaning, discharge cleaning fluids all in ablution groove 500, prevent the liquid saved bit by bit from being entered into the reservoir 400 of bottom by dividing plate 310, pollute etching liquid.Equally also be beneficial to sample on sample stage 140 when entering dry slot 600 and carrying out drying, discharge all liq in dry slot 600, prevent the solution saved bit by bit from entering into the reservoir 400 of ablution groove 500 below or bottom by dividing plate 310, pollute etching liquid.
Be understandable that, embodiment 3 adopts the mode of the up-down mode sample holder 130 of elevating mechanism to control it through dividing plate 310 to reach each working region, all the other do not state structure and interstructural connected mode structure that is most and embodiment 1 is similar, role and also similar, no longer repeats to describe in detail at this.
Fig. 7 is the structure vertical view of multi-crystalline silicon sample etching device in embodiment 3, as shown in Figure 7, linkage 110 can arrange many group sample holders 130, for etching many group samples 20 simultaneously.
Fig. 8 is the structural representation of embodiment 3 median septum, and as shown in Figure 8, the shape of dividing plate breach 60 is identical with sample holder 130, for passing in and out each working region through dividing plate breach 60 in sample holder 130 lifting process.Wherein, the dividing plate breach 60 of dividing plate 310 is provided with the cover plate that can raise, after sample holder 130 passes through, namely closes breach 60, prevent the etching solution in reservoir 400 from evaporating in other grooves.Be understandable that, the cover plate that dividing plate breach 60 is arranged can adopt structure similar to Example 1.
Multi-crystalline silicon sample etching device in the present embodiment, provide a kind of replacement scheme of embodiment 1, support front end 132 134 liftings are around the shaft controlled equally by linkage 110, thus whether the sample 20 on Quality control microscope carrier 140 impregnated in etching liquid, when whole sample holder is adjusted to straightened condition, namely sample leaves etching liquid, completes sample etching.Under sample etching process occurs in the hermetically sealed environment provided by sealed barrel, avoid the health of human body of the reason infringement operating personnel such as etching liquid volatilization, eliminate the risk had an accident.
Embodiment 4:
Fig. 9 is the vertical view of multi-crystalline silicon sample etching device in embodiment 4, and the difference of itself and embodiment 3 is, in embodiment 3, staving 100 is hexagon bucket, and in embodiment 2 is column barrel.Be understandable that, in other embodiments, as long as sealing bucket, staving 100 also can be the polygon bucket of other shapes, such as pentagon bucket, octagon bucket etc.In embodiment 4, columniform staving 100 is easier to processing relative to the hexagon bucket in embodiment 3, but embodiment 1 median septum 310 can be fixed on bight, is therefore beneficial to the processing of dividing plate 310 with fixing.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a multi-crystalline silicon sample etching device, comprises sealed barrel, linkage, sample holder and sample stage, it is characterized in that, described staving central authorities are provided with protection tower, and described linkage is perpendicular to being arranged in described protection tower bottom staving rotationally; Described multi-crystalline silicon sample etching device also comprises and to be connected with the outer wall of described protection tower and perpendicular to the dividing plate bottom staving, the spaced apart in staving is formed plural working region by described dividing plate; Described linkage, sample holder and sample stage connect successively, and the outer wall of described protection tower offers a circle window, put in working region and can rotate with linkage and can not hinder by protected tower outer wall for sample holder in protection tower; Described dividing plate offers dividing plate breach, can pass described dividing plate breach from a working region to another working region when rotating with described linkage for sample holder and sample stage, described linkage can control the lifting of described sample holder.
2. multi-crystalline silicon sample etching device according to claim 1, it is characterized in that, the quantity of described working region is three, be set to reservoir respectively, ablution groove and dry slot, described reservoir is provided with the through hole imported and exported for solution on bucket outer wall, and described ablution groove sidewall is provided with cleaning shower nozzle and liquid outlet, and described dry slot is provided with gas tip and air exit.
3. multi-crystalline silicon sample etching device according to claim 1, it is characterized in that, described sample holder comprises support front end, connect the back-end support of described linkage and connect the rotating shaft of described back-end support and support front end, described sample stage is located at described support front end, described linkage is elevated around described rotating shaft for controlling described support front end, and the angle of described sample stage and described support front end is 45 degree and arranges to 60 degree.
4. multi-crystalline silicon sample etching device according to claim 3, is characterized in that, described sample stage is detachable connection with described support front end, and the top of described staving is provided with folding lid, for picking and placeing described sample stage.
5. multi-crystalline silicon sample etching device according to claim 4, is characterized in that, described folding is covered on the top of described dry slot.
6. multi-crystalline silicon sample etching device according to claim 1, is characterized in that, also comprises the rotating base be located in described protection tower, and described linkage is located on described rotating base, and described rotating base rotates for driving described linkage.
7. multi-crystalline silicon sample etching device according to claim 6, is characterized in that, described linkage top is also provided with carrying handle, drives described sample holder to promote to pick and place described sample stage for upwards drawing high described linkage.
8. multi-crystalline silicon sample etching device according to claim 6, it is characterized in that, described linkage comprises timing unit and actuating unit, described timing unit is used for controlling described actuating unit drive described rotating shaft to rotate when arriving the moment of setting, and controls described rotating base and drive described linkage to rotate.
9. multi-crystalline silicon sample etching device according to claim 1, is characterized in that, described staving is column barrel or polygon bucket.
10. a multi-crystalline silicon sample etching device, comprises sealed barrel, linkage, sample holder and sample stage, it is characterized in that, described staving central authorities are provided with protection tower, and described linkage is perpendicular to being liftably arranged in described protection tower bottom staving, described multi-crystalline silicon sample etching device also comprises the dividing plate be connected with the outer wall of described protection tower, space in the vertical direction in staving is separated the plural working region of formation by described dividing plate, described linkage, sample holder and sample stage connect successively, the outer wall of described protection tower offers the window to the extension bottom staving, in protection tower, put in working region for sample holder and can not can hinder by protected tower outer wall with linkage lifting, described dividing plate offers dividing plate breach, described dividing plate breach can be passed from a working region to another working region with during described linkage lifting for sample holder and sample stage, described dividing plate indentation, there is correspondingly provided with cover plate to be opened/closed, for passing through dividing plate breach described in the opening and closing of front and back at sample stage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510368443.0A CN104934310B (en) | 2015-06-29 | 2015-06-29 | Multi-crystalline silicon sample etching device |
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| CN201510368443.0A CN104934310B (en) | 2015-06-29 | 2015-06-29 | Multi-crystalline silicon sample etching device |
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| CN104934310B (en) | 2018-01-05 |
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