CN104932376A - Common source amplification circuit-based phase-shift type high-frequency conversion oscillation system - Google Patents
Common source amplification circuit-based phase-shift type high-frequency conversion oscillation system Download PDFInfo
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- CN104932376A CN104932376A CN201510317695.0A CN201510317695A CN104932376A CN 104932376 A CN104932376 A CN 104932376A CN 201510317695 A CN201510317695 A CN 201510317695A CN 104932376 A CN104932376 A CN 104932376A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
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Abstract
The invention discloses a common source amplification circuit-based phase-shift type high-frequency conversion oscillation system. The common source amplification circuit-based phase-shifted high-frequency conversion oscillation system is composed of a transformer T1, a transformer T2, an oscillation circuit, a micro processing circuit connected with the oscillation circuit, a frequency mixing circuit connected with the secondary side of the transformer T1, a first conversion circuit connected with the frequency mixing circuit, a processing circuit connected with the frequency mixing circuit and the first conversion circuit simultaneously, a second conversion circuit connected with the output end of the processing circuit, a phase shift processing circuit connected with the oscillation circuit and the non-dotted terminal of the primary side of the transformer T1 simultaneously; the primary side of the transformer T2 is connected with the second conversion circuit; and the primary side of the transformer T1 is connected with the micro processing circuit. The common source amplification circuit-based phase-shift type high-frequency conversion oscillation system is characterized in that a common source amplification circuit is connected in series between the phase shift processing circuit and the second conversion circuit. According to the common source amplification circuit-based phase-shift type high-frequency conversion oscillation system of the invention, the common source amplification circuit is adopted to amplify oscillation signals, so that the common source amplification circuit-based phase-shift type high-frequency conversion oscillation system can generate high frequency and maintain high stability at the same time.
Description
Technical field
The present invention relates to a kind of oscillatory system, specifically refer to a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit.
Background technology
Along with the development of communication, oscillator is widely used in the communication facilitiess such as radio broadcasting, but current oscillatory system its frequency when sending high-frequency is also unstable.
Summary of the invention
The object of the invention is to overcome the current oscillatory system defect that its frequency is also unstable when sending high-frequency, a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit is provided.
The following technical scheme of object of the present invention realizes: a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit, it is by transformer T1, transformer T2, oscillatory circuit, the micro-processor interface circuit be connected with oscillatory circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output terminal, the phase shift treatment circuit be simultaneously connected with transformer T1 former limit non-same polarity with oscillatory circuit, be serially connected in the common source amplifying circuit composition between phase shift treatment circuit and the second change-over circuit.The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit.
Further, described common source amplifying circuit is by field effect transistor K1, field effect transistor K2, triode Q9, negative pole is connected with the grid of field effect transistor K1, the polar capacitor C12 that positive pole is then connected with phase shift treatment circuit, N pole is connected with the grid of field effect transistor K1, the diode D3 that P pole is then connected with the base stage of triode Q9, one end is connected with the drain electrode of field effect transistor K1, the resistance R19 of other end ground connection after resistance R20, one end is connected with the source electrode of field effect transistor K1, the other end then meets the resistance R18 of 12V voltage after resistance R17, positive pole is connected with the tie point of resistance R18 with resistance R17, the polar capacitor C13 that negative pole is then connected with the drain electrode of field effect transistor K2, N pole is connected with the negative pole of polar capacitor C13, the diode D4 that P pole is then connected with the grid of field effect transistor K2, and one end is connected with the collector of triode Q9, the resistance R21 that the other end is then connected with the source electrode of field effect transistor K2 forms, the base stage of described triode Q9 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2, the source electrode of described field effect transistor K2 is connected with the base stage of triode Q9 and the second change-over circuit respectively.
Described phase shift treatment circuit is by phase shift chip U1, triode Q7, triode Q8, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R15 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R16, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that negative pole is connected with the collector of triode Q7, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is connected with the positive pole of polar capacitor C9 potentiometer R14, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D1 that N pole is connected with the base stage of triode Q7, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D2 that N pole is connected with the emitter of triode Q8 forms, the VCC+ pin of described phase shift chip U1 is connected with external voltage, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R14, the emitter of triode Q7 is connected with the base stage of triode Q8, the collector of triode Q8 is connected with the positive pole of polar capacitor C12, the negative pole of polar capacitor C11 is connected with oscillatory circuit, and the positive pole of polar capacitor C9 is connected with transformer T1 former limit non-same polarity.
Described oscillatory circuit is by oscillistor T, triode Q1, triode Q2, the resistance R1 that one end is connected with the base stage of triode Q1, the other end is connected with the collector of triode Q1 after resistance R2, positive pole is connected with the base stage of triode Q1, the polar capacitor C1 of minus earth, one end is connected with the emitter of triode Q1, the other end is connected resistance R3 with the negative pole of polar capacitor C11, and the polar capacitor C2 between the emitter and collector being serially connected in triode Q1 forms; Between the base stage that the two ends of described oscillistor T are serially connected in triode Q1 and collector, the base stage of triode Q2 is connected with triode Q1 collector, grounded emitter, collector are then connected with micro-processor interface circuit, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
Described micro-processor interface circuit comprises resistance R4, resistance R5, resistance R6, and triode Q3; One end of resistance R4 is connected with the collector of triode Q3, other end ground connection after resistance R5, and one end of resistance R6 is connected with the emitter of triode Q3, other end ground connection; The base stage of described triode Q3 is simultaneously with the collector of triode Q2 and resistance R4 is connected with the tie point of resistance R5, its collector is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
Described mixting circuit is by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms; One end of resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of dual-gate field-effect pipe K, the other end gets back to dual-gate field-effect pipe K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of dual-gate field-effect pipe K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
The first described change-over circuit is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector of triode Q4 forms; The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms; The base stage of described triode Q6 is connected with the emitter of triode Q5, its collector is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector is connected with the drain electrode of dual-gate field-effect pipe K and the second change-over circuit simultaneously.
The second described change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12; The positive pole of polar capacitor C8 is connected with the Same Name of Ends on the former limit of transformer T2, its negative pole is connected with the collector of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12; Described transformer T2 secondary Same Name of Ends ground connection, its non-same polarity is then as the output terminal of system.
Described phase shift chip U1 is LM741 integrated chip.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention adopts common source amplifying circuit to amplify to oscillator signal, thus makes the present invention can also keep high stability sending high-frequency while.
(2) the present invention can improve the frequency of operation of oscillatory system greatly, makes its range of application wider.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is by transformer T1, transformer T2, oscillatory circuit, the micro-processor interface circuit be connected with oscillatory circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output terminal, the phase shift treatment circuit be simultaneously connected with transformer T1 former limit non-same polarity with oscillatory circuit, is serially connected in the common source amplifying circuit composition between phase shift treatment circuit and the second change-over circuit.The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit.
Wherein, described phase shift treatment circuit is by phase shift chip U1, triode Q7, triode Q8, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R15 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R16, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that negative pole is connected with the collector of triode Q7, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is connected with the positive pole of polar capacitor C9 potentiometer R14, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D1 that N pole is connected with the base stage of triode Q7, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D2 that N pole is connected with the emitter of triode Q8 forms.
During connection, the VCC+ pin of this phase shift chip U1 is connected with external voltage, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R14, the emitter of triode Q7 is connected with the base stage of triode Q8, the collector of triode Q8 is connected with common source amplifying circuit, the negative pole of polar capacitor C11 is connected with oscillatory circuit, and the positive pole of polar capacitor C9 is connected with transformer T1 former limit non-same polarity.Phase shift treatment circuit, makes oscillatory system can also protect high stability sending high-frequency while.In order to ensure implementation result, described phase shift chip U1 is preferably LM741 integrated chip, and it is highly sensitive, cheap.
This oscillatory circuit is for generation of electromagnetic wave, and it is by oscillistor T, triode Q1, triode Q2, resistance R1, resistance R2, resistance R3, and polar capacitor C1 and polar capacitor C2 forms.
During connection, one end of resistance R1 is connected with the base stage of triode Q1, its other end is connected with the collector of triode Q1 after resistance R2, the positive pole of polar capacitor C1 is connected with the base stage of triode Q1, its minus earth, one end of resistance R3 is connected with the emitter of triode Q1, its other end is connected with the negative pole of polar capacitor C11, and polar capacitor C2 is then serially connected between the emitter and collector of triode Q1.
Meanwhile, oscillator signal can be sent by continuous print in order to ensure oscillistor T, between the base stage that the two ends of this oscillistor T are serially connected in triode Q1 and collector.The base stage of triode Q2 is connected with triode Q1 collector, grounded emitter, collector are then connected with micro-processor interface circuit, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
Microprocessor processes the electromagnetic wave that oscillatory circuit produces, and it comprises resistance R4, resistance R5, resistance R6, and triode Q3.Connect into, one end of this resistance R4 is connected with the collector of triode Q3, other end ground connection after resistance R5.One end of resistance R6 is connected with the emitter of triode Q3, other end ground connection.The base stage of described triode Q3 is simultaneously with the collector of triode Q2 and resistance R4 is connected with the tie point of resistance R5, its collector is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
Described mixting circuit is then by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms.During connection, one end of this resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of dual-gate field-effect pipe K, the other end gets back to dual-gate field-effect pipe K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of dual-gate field-effect pipe K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
First change-over circuit converts direct current to the alternating current of input, it is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector of triode Q4 forms.The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms.
In order to ensure treatment effect, the base stage of this triode Q6 is connected with the emitter of triode Q5, its collector is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit.The base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector is connected with the drain electrode of dual-gate field-effect pipe K and the second change-over circuit simultaneously.
Second change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12.During enforcement, the positive pole of polar capacitor C8 is connected with the Same Name of Ends on the former limit of transformer T2, its negative pole is connected with the collector of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12; Described transformer T2 secondary Same Name of Ends ground connection, its non-same polarity is then as the output terminal of system.Meanwhile, this polar capacitor C5 also needs to be connected with common source amplifying circuit.
Common source amplifying circuit is then by field effect transistor K1, and field effect transistor K2, triode Q9, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, polar capacitor C12, polar capacitor C13, diode D3 and diode D4 level becomes.
Connect into, the negative pole of this polar capacitor C12 is connected with the grid of field effect transistor K1, its positive pole is then connected with phase shift treatment circuit, the N pole of diode D3 is connected with the grid of field effect transistor K1, its P pole is then connected with the base stage of triode Q9, one end of resistance R19 is connected with the drain electrode of field effect transistor K1, its other end is ground connection after resistance R20, one end of resistance R18 is connected with the source electrode of field effect transistor K1, its other end then connects 12V voltage after resistance R17, the positive pole of polar capacitor C13 is connected with the tie point of resistance R18 with resistance R17, its negative pole is then connected with the drain electrode of field effect transistor K2, the N pole of diode D4 is connected with the negative pole of polar capacitor C13, its P pole is then connected with the grid of field effect transistor K2, one end of resistance R21 is connected with the collector of triode Q9, its other end is then connected with the source electrode of field effect transistor K2.Wherein, this field effect transistor K1, triode Q9, field effect transistor K2 and resistance R21 form a commonsource amplifier.
Meanwhile, the base stage of this triode Q9 need be connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2.The source electrode of described field effect transistor K2 is connected with the base stage of triode Q9 and the second change-over circuit respectively.By the amplification process of this common source amplifying circuit, thus make the present invention still can guarantee the stability of oscillator signal when sending high-frequency oscillation signal.
As mentioned above, just well the present invention can be realized.
Claims (9)
1. the phase shift high frequency conversion oscillatory system based on common source amplifying circuit, it is by transformer T1, transformer T2, oscillatory circuit, the micro-processor interface circuit be connected with oscillatory circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output terminal, and form with the phase shift treatment circuit that oscillatory circuit is connected with transformer T1 former limit non-same polarity simultaneously, the former limit of described transformer T2 is connected with the second change-over circuit, the former limit of transformer T1 is connected with micro-processor interface circuit, it is characterized in that: between phase shift treatment circuit and the second change-over circuit, be also serially connected with common source amplifying circuit, described common source amplifying circuit is by field effect transistor K1, field effect transistor K2, triode Q9, negative pole is connected with the grid of field effect transistor K1, the polar capacitor C12 that positive pole is then connected with phase shift treatment circuit, N pole is connected with the grid of field effect transistor K1, the diode D3 that P pole is then connected with the base stage of triode Q9, one end is connected with the drain electrode of field effect transistor K1, the resistance R19 of other end ground connection after resistance R20, one end is connected with the source electrode of field effect transistor K1, the other end then meets the resistance R18 of 12V voltage after resistance R17, positive pole is connected with the tie point of resistance R18 with resistance R17, the polar capacitor C13 that negative pole is then connected with the drain electrode of field effect transistor K2, N pole is connected with the negative pole of polar capacitor C13, the diode D4 that P pole is then connected with the grid of field effect transistor K2, and one end is connected with the collector of triode Q9, the resistance R21 that the other end is then connected with the source electrode of field effect transistor K2 forms, the base stage of described triode Q9 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2, the source electrode of described field effect transistor K2 is connected with the base stage of triode Q9 and the second change-over circuit respectively.
2. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 1, it is characterized in that: described phase shift treatment circuit is by phase shift chip U1, triode Q7, triode Q8, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R15 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R16, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that negative pole is connected with the collector of triode Q7, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is connected with the positive pole of polar capacitor C9 potentiometer R14, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D1 that N pole is connected with the base stage of triode Q7, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D2 that N pole is connected with the emitter of triode Q8 forms, the VCC+ pin of described phase shift chip U1 is connected with external voltage, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R14, the emitter of triode Q7 is connected with the base stage of triode Q8, the collector of triode Q8 is connected with the positive pole of polar capacitor C12, the negative pole of polar capacitor C11 is connected with oscillatory circuit, and the positive pole of polar capacitor C9 is connected with transformer T1 former limit non-same polarity.
3. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 2, it is characterized in that: described oscillatory circuit is by oscillistor T, triode Q1, triode Q2, one end is connected with the base stage of triode Q1, the resistance R1 that the other end is connected with the collector of triode Q1 after resistance R2, positive pole is connected with the base stage of triode Q1, the polar capacitor C1 of minus earth, one end is connected with the emitter of triode Q1, the other end is connected with the negative pole of polar capacitor C11 resistance R3, polar capacitor C2 between the emitter and collector being serially connected in triode Q1 forms, between the base stage that the two ends of described oscillistor T are serially connected in triode Q1 and collector, the base stage of triode Q2 is connected with triode Q1 collector, grounded emitter, collector are then connected with micro-processor interface circuit, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
4. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 3, is characterized in that: described micro-processor interface circuit comprises resistance R4, resistance R5, resistance R6, and triode Q3; One end of resistance R4 is connected with the collector of triode Q3, other end ground connection after resistance R5, and one end of resistance R6 is connected with the emitter of triode Q3, other end ground connection; The base stage of described triode Q3 is simultaneously with the collector of triode Q2 and resistance R4 is connected with the tie point of resistance R5, its collector is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
5. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 4, is characterized in that: described mixting circuit is by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms; One end of resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of dual-gate field-effect pipe K, the other end gets back to dual-gate field-effect pipe K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of dual-gate field-effect pipe K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
6. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 5, it is characterized in that: the first described change-over circuit is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector of triode Q4 forms; The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
7. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 6, it is characterized in that: described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms; The base stage of described triode Q6 is connected with the emitter of triode Q5, its collector is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector is connected with the drain electrode of dual-gate field-effect pipe K and the second change-over circuit simultaneously.
8. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 7, is characterized in that: the second described change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12; The positive pole of polar capacitor C8 is connected with the Same Name of Ends on the former limit of transformer T2, its negative pole is connected with the collector of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12; Described transformer T2 secondary Same Name of Ends ground connection, its non-same polarity is then as the output terminal of system.
9. a kind of phase shift high frequency conversion oscillatory system based on common source amplifying circuit according to claim 8, is characterized in that: described phase shift chip U1 is LM741 integrated chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510317695.0A CN104932376A (en) | 2014-11-26 | 2015-06-10 | Common source amplification circuit-based phase-shift type high-frequency conversion oscillation system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410695836.8A CN104407549A (en) | 2014-11-26 | 2014-11-26 | Phase-shift high-frequency conversion oscillatory system |
| CN2014106958368 | 2014-11-26 | ||
| CN201510317695.0A CN104932376A (en) | 2014-11-26 | 2015-06-10 | Common source amplification circuit-based phase-shift type high-frequency conversion oscillation system |
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| CN104932376A true CN104932376A (en) | 2015-09-23 |
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| CN201410695836.8A Pending CN104407549A (en) | 2014-11-26 | 2014-11-26 | Phase-shift high-frequency conversion oscillatory system |
| CN201510317695.0A Withdrawn CN104932376A (en) | 2014-11-26 | 2015-06-10 | Common source amplification circuit-based phase-shift type high-frequency conversion oscillation system |
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| CN201410695836.8A Pending CN104407549A (en) | 2014-11-26 | 2014-11-26 | Phase-shift high-frequency conversion oscillatory system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106817081A (en) * | 2016-12-29 | 2017-06-09 | 杭州电子科技大学 | A kind of high-frequency generator for suppressing unwanted oscillation |
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| CN104407549A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Phase-shift high-frequency conversion oscillatory system |
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| FR2575622A1 (en) * | 1984-12-27 | 1986-07-04 | Baptiste Claude | Direct demodulation receiver with automatic locking-on of tuning of the input circuit |
| CN102156211A (en) * | 2010-12-21 | 2011-08-17 | 成都成电硅海科技股份有限公司 | Full-CMOS (complementary metal-oxide-semiconductor transistor) accurate current sampling circuit |
| CN102231509A (en) * | 2011-06-21 | 2011-11-02 | 西安电子科技大学 | Undervoltage latch circuit capable of preventing error turning |
| CN202796005U (en) * | 2012-08-03 | 2013-03-13 | 惠州市德赛西威汽车电子有限公司 | Automatically adjusted backlight circuit |
| CN104407549A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Phase-shift high-frequency conversion oscillatory system |
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2014
- 2014-11-26 CN CN201410695836.8A patent/CN104407549A/en active Pending
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2015
- 2015-06-10 CN CN201510317695.0A patent/CN104932376A/en not_active Withdrawn
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| FR2575622A1 (en) * | 1984-12-27 | 1986-07-04 | Baptiste Claude | Direct demodulation receiver with automatic locking-on of tuning of the input circuit |
| CN102156211A (en) * | 2010-12-21 | 2011-08-17 | 成都成电硅海科技股份有限公司 | Full-CMOS (complementary metal-oxide-semiconductor transistor) accurate current sampling circuit |
| CN102231509A (en) * | 2011-06-21 | 2011-11-02 | 西安电子科技大学 | Undervoltage latch circuit capable of preventing error turning |
| CN202796005U (en) * | 2012-08-03 | 2013-03-13 | 惠州市德赛西威汽车电子有限公司 | Automatically adjusted backlight circuit |
| CN104407549A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Phase-shift high-frequency conversion oscillatory system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817081A (en) * | 2016-12-29 | 2017-06-09 | 杭州电子科技大学 | A kind of high-frequency generator for suppressing unwanted oscillation |
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| CN104407549A (en) | 2015-03-11 |
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