CN104931188A - Microcomputer electric pressure gauge and manufacture method thereof - Google Patents
Microcomputer electric pressure gauge and manufacture method thereof Download PDFInfo
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- CN104931188A CN104931188A CN201410273047.5A CN201410273047A CN104931188A CN 104931188 A CN104931188 A CN 104931188A CN 201410273047 A CN201410273047 A CN 201410273047A CN 104931188 A CN104931188 A CN 104931188A
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Abstract
The present invention provides a microcomputer electric pressure gauge which comprises a substrate with at least one conductive line, a film above the substrate, and a sealing cover which is above the film and is provided with an upper electrode corresponding to the film. A semi-opening cavity is arranged between the film and the substrate, and the cavity is provided with an opening to receive external pressure. A closed space is formed by the sealing cover and the film. A lower electrode is formed by at least a part of the film. A sensitive capacitor is formed by the upper electrode and the lower electrode to sense external pressure. The lower electrode and the upper electrode are electrically connected to the conductive line respectively. At the same time, the invention provides the manufacture method of the microcomputer electric pressure gauge.
Description
Technical field
The present invention relates to a kind of micro-electromechanical pressure meter, be in particular and there is the open cavity of the half accepting external air pressure and film is arranged at micro-electromechanical pressure meter above semi-open cavity.
Background technology
Micro-electromechanical pressure meter is generally applied in daily life, such as altitude gauge, tire gauge or engine management system equal pressure sensing occasion.Fig. 1 shows a micro-electromechanical pressure meter 10 of prior art, from top to bottom sequentially comprise film 11, enclosure space 12, with substrate 13, film 11 produces distortion according to extraneous pressure P, so produce sensing signal.The advantage of this design is that structure is simple, but the working gas be applied in semiconductor technology such as argon gas, oxygen etc., part can residue in the circuit on substrate 13, this a little residual gas will be released in enclosure space 12, cause the pressure following temperature in enclosure space 12 to change and off-design value consequently affects sensing, cause sensing quality not good.The microcomputer electric component of above-mentioned form can see US Patent No. 6131466, US8008738.
Therefore, how reducing the impact of residual gas for sensing, is the key that product development is important.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and defect, propose a kind of micro-electromechanical pressure meter, the impact of residual gas for sensing can be reduced, also propose the method for making of this micro-electromechanical pressure meter simultaneously.
For reaching above-mentioned purpose, with regard to one of them viewpoint, the invention provides a kind of micro-electromechanical pressure meter, wherein comprising: a substrate, there is at least one conducting wire; One film, is positioned at this surface, and between this film and this substrate, form the open cavity of half, this semi-open cavity has an opening to accept extraneous pressure; And a capping, to be positioned at above this film and to form an enclosure space with this film, this capping has the top electrode arranged corresponding to this film, and this film has at least a part to form bottom electrode, and this upper and lower electrode forms inductance capacitance to sense this extraneous pressure; Wherein, this bottom electrode and this top electrode are electrically connected on the conducting wire on this substrate respectively.
In one embodiment, this enclosure space itself is completely closed, or this micro-electromechanical pressure meter also comprises a logical pressure path, and this enclosure space is communicated in a reference pressure source via this logical pressure path.
In one embodiment, this logical pressure path is arranged in this capping.
In one embodiment, between this capping and this film, have an insulation course, and this logical pressure path is arranged in this insulation course.
In one embodiment, this film and this insulation course are respectively silicon layer and the insulation course of an insulating layer covered with silicone chip.
In one embodiment, this film can have a conductive metal layer to form lower metal electrode and quality structure.
In one embodiment, this micro-electromechanical pressure meter also comprises a conductive plugs structure, and this bottom electrode is electrically connected on this conducting wire.
In one embodiment, this top electrode passes through a conductive plugs anatomical connectivity in this conducting wire, and this micro-electromechanical pressure meter also comprises: the electrical isolation structure of position between this bottom electrode and this conductive plugs structure, and this isolation structure is a space or is insulating material.
In one embodiment, this micro-electromechanical pressure meter also comprises multiple stopper, is arranged at the opening part of this semi-open cavity.
In one embodiment, this capping is provided with at least one stop block in the one side of this film.
For reaching above-mentioned purpose, with regard to another viewpoint, the invention provides a kind of method for making of micro-electromechanical pressure meter, wherein comprising: a substrate is provided, comprising at least one conducting wire; There is provided a film, and open cavity in this surface to make forming half between this film and this substrate in conjunction with this film, wherein this film has at least a part to form bottom electrode; This thin-film electro is connected to this conducting wire; There is provided a capping, being incorporated into above this film and forming an enclosure space with this film, this capping has the top electrode corresponding to film; And be electrically connected this top electrode in this conducting wire, wherein this semi-open cavity has an opening to accept extraneous pressure, makes this film produce deformation according to this extraneous pressure.
For reaching above-mentioned purpose, just another viewpoint, the invention provides a kind of method for making of micro-electromechanical pressure meter, utilizes made by CMOS (Complementary Metal Oxide Semiconductor) technique, wherein comprise: provide a substrate, wherein comprise at least one conducting wire; Form one first insulation course on this substrate; First and part second conductive plugs structure is formed in this first insulation course; Be combined with a film by this substrate by the first insulation course, to form the open cavity of half, wherein this film has at least a part to form bottom electrode; This bottom electrode is electrically connected on this conducting wire by the first conductive plugs structure; Form one second insulation course on film; Forming section second conductive plugs structure in the second insulation course; And a capping is provided, this capping is combined to form an enclosure space with film by the second insulation course, this capping has the top electrode corresponding to bottom electrode, this top electrode is electrically connected on this conducting wire by this second conductive plugs structure, wherein this semi-open cavity has an opening to accept extraneous pressure, makes this film produce deformation according to this extraneous pressure.
Illustrate in detail below by specific embodiment, when the effect being easier to understand object of the present invention, technology contents, feature and reach.
Accompanying drawing explanation
Fig. 1 shows the micro-electromechanical pressure meter of prior art;
Fig. 2 A shows the sectional view of micro-electromechanical pressure meter according to an embodiment of the invention, and it is the sectional view according to AA cutting line gained in Fig. 2 D, 2E;
Fig. 2 B shows the sectional view of micro-electromechanical pressure meter according to yet another embodiment of the invention, and it is the sectional view according to AA cutting line gained in Fig. 2 D, 2E;
Fig. 2 C shows the sectional view of micro-electromechanical pressure meter according to another embodiment of the present invention, and it is the sectional view according to AA cutting line gained in Fig. 2 D, 2E;
Fig. 2 D shows the partial top view of an embodiment of Fig. 2 A ~ 2C split shed 221 relevant range;
Fig. 2 E shows the partial top view of an embodiment of Fig. 2 A ~ 2C split shed 221 relevant range;
Fig. 3 A shows the sectional view of micro-electromechanical pressure meter according to another embodiment of the present invention, and it is the sectional view according to BB cutting line gained in Fig. 3 B;
Fig. 3 B shows the partial top view according to an embodiment of Fig. 3 A split shed 221 relevant range;
Fig. 4 shows the method for making flow process of micro-electromechanical pressure meter according to an embodiment of the invention;
Fig. 5 shows the method for making flow process of micro-electromechanical pressure meter according to another embodiment of the present invention.
Symbol description in figure
10 micro-electromechanical pressure meters
11 films
12 enclosure spaces
13 substrates
20 micro-electromechanical pressure meters
21 films
211 quality structures
22 semi-open cavitys
221 openings
222 restraining masss
23 substrates
231 conducting wires
24 cappings
241 top electrodes
242 stop blocks
25 enclosure spaces
26 logical pressure paths
30 micro-electromechanical pressure meters
37 conductive plugs structures
L1 first insulation course
L2 second insulation course
P extraneous pressure
PS reference pressure source
U conductive plugs structure
T electrical isolation structure
Embodiment
Aforementioned and other technology contents, feature and effect for the present invention, in the following detailed description coordinated with reference to a preferred embodiment of accompanying drawing, can clearly present.The direction term mentioned in following examples such as: upper and lower, left and right, front or rear etc., is only the direction with reference to annexed drawings.Graphic in the present invention all belongs to signal, is mainly intended to represent the function relation between each device and each element, as shape, thickness and width then not according to scale.
With reference to Fig. 2 A, the invention provides a kind of micro-electromechanical pressure meter 20, wherein comprise: a substrate 23, there is at least one conducting wire 231, this substrate 23 such as but not limited to comprise silicon underlying substrate (also can be the underlying substrate made by other material) and to be made on this silicon underlying substrate by semiconductor technology or within wire line (such as but not limited to by made by the steps such as micro-shadow, implanted ions, deposition, etching), the open cavity 22 of half, above conducting wire 231 and between a film 21, this semi-open cavity 22 has an opening 221 to accept extraneous pressure P, and is combined with each other by insulation course L1 between film 21 and substrate 23, and this insulation course L1 can be individual layer or composite insulating material layer, and a capping 24, to be positioned at above film 21 and to form an enclosure space 25 with film 21, capping 24 has the top electrode 241 arranged corresponding to film 21, and film 21 has at least a part (also can all) to form bottom electrode, both form inductance capacitance to sense this extraneous pressure P, be combined with each other by insulation course L2 between film 21 and capping 24, this insulation course L2 can be individual layer or composite layer, wherein goodly comprise at least one deck insulating material, such as single insulating layer or use all or part of of insulating layer covered with silicone to make (in the embodiment using insulating layer covered with silicone, silicon layer in insulating layer covered with silicone can be used as film 21, and use the insulation course in insulating layer covered with silicone to be used as insulation course L2), wherein, bottom electrode in top electrode 241 and film 21 is electrically connected on conducting wire 231 respectively, for example, bottom electrode in film 21 is electrically connected on conducting wire 231 such as but not limited to by conductive plugs structure U, and top electrode 241 is electrically connected on conducting wire 231 such as but not limited to by external electric link.Below be only citing, the bottom electrode in certain film 21 also can be electrically connected on conducting wire 231 by external electric link and top electrode 241 is also electrically connected on conducting wire 231 (can consult Fig. 3 A embodiment) by conductive plugs structure.
In one embodiment, enclosure space 25 itself is completely airtight and have a vacuum state, and now micro-electromechanical pressure meter 20 such as can carry out absolute type pressure-sensing (Absolute pressuresensing).Or in another embodiment, with reference to Fig. 2 B, 2C, enclosure space 25 can be communicated in a reference pressure source PS via a logical pressure path 26, and now micro-electromechanical pressure meter 20 such as can carry out instrumented pressure-sensing (Gauge pressure sensing).In one embodiment, logical pressure path 26 such as can be arranged in capping 24 (as shown in Figure 2 B); In another embodiment, logical pressure path 26 such as can be arranged in the second insulation course L2 (as shown in Figure 2 C).When enclosure space 25 is communicated in reference pressure source PS via logical pressure path 26, enclosure space 25, logical pressure path 26 and reference pressure source PS entirety form the environment of an airtight controllable pressure.
In one embodiment, this film 21 can have at least one quality structure 211, and the other parts of its thinner thickness film 21 are high, the better near center location that should be arranged on film 21 of this quality structure 211, its object is the amplitude increasing film 21 vibration, and the resolution of sensing is increased.In another embodiment, film 21 is entirely made by conductive material itself, or comprises layer of conductive material, to form bottom electrode.In addition, capping 24 can comprise at least one stop block (Stopper) 242, be arranged on towards the correct position of this one side of film 21 (position such as but not limited to corresponding to quality structure 211), to prevent from sticking together (Stiction) phenomenon between film 21 and capping 24 or preventing film 21 curvature excessive.
With reference to Fig. 2 D, for the partial top view (Fig. 2 B, 2C are the sectional view of Fig. 2 D along AA cutting line gained) of Fig. 2 B, 2C split shed 221 relevant range, its display in one embodiment, semi-open cavity 22 has opening 221, and multiple restraining mass 222 is provided with in this opening 221, object is to filter external impurity.In figure, restraining mass 222 is the staggered cylinder of two rows, but the shape of set-up mode and restraining mass is all not limited thereto, such as set-up mode can adopt single-row, two row, more multiple row or the different mode of density arranges, and the shape of restraining mass can be other any shape, also identical size and shape must not be had to each other, such as, shown in Fig. 2 E.
In Fig. 2 B embodiment, film 21 is connected to conducting wire 231, with transmitting signals to conducting wire 231 by a conductive plugs structure U; Top electrode 241 passes through an electrical interconnection, with transmitting signals to conducting wire 231.With reference to Fig. 3 A, in another embodiment, top electrode 241 by another conductive plugs structure 37 by signal to conducting wire 231.Because upper and lower electrode short circuit should not be connected to same current potential, therefore conductive plugs structure 37 should not be connected with the bottom electrode in film 21 in short circuit, therefore an electrical isolation structure T should be set between bottom electrode and conductive plugs structure 37, this electrical isolation structure T can be a space or is insulating material.
Be similar to Fig. 2 D, 2E, Fig. 3 B shows the partial top view of an embodiment of opening 221 relevant range.Though opening 221 can not be seen in Fig. 3 A, opening 221 should be had by micro-electromechanical pressure meter 30 in the known Fig. 3 A of the explanation of previous embodiment, semi-open cavity 22 can be entered to make extraneous pressure P.In addition, Fig. 3 A display quality structure 211, stop block 242, logical pressure path 26 and reference pressure source PS etc. are not all definitely necessary.
With reference to Fig. 4, according to another viewpoint, the invention provides a kind of method for making of micro-electromechanical pressure meter, wherein comprise: a substrate is provided, wherein comprise at least one conducting wire; There is provided a film, and combination film opens cavity to make forming half therebetween above circuit substrate, and thin-film electro is connected to conducting wire, wherein this film has at least a part to form bottom electrode; There is provided a capping, being incorporated into above film and forming an enclosure space with film, capping has the top electrode corresponding to film; And electrical connection top electrode is in conducting wire.Above-mentioned semi-open cavity has an opening to accept extraneous pressure, makes film produce deformation according to extraneous pressure, to reach pressure-sensing function.Wherein, the sequencing of step does not limit as aforementioned, such as, first capping can be incorporated into after above film, then be combined with circuit substrate by film.A central step is also disassembled is several step, and the such as formation of semi-open cavity, first can form a closed cavity (not shown), then forms an opening (Fig. 2 A-2E, opening 221) with connecting sealed cavity and outside air pressure etc.In addition, thin-film electro is connected to the step of conducting wire, also can separates with the integrating step of film with substrate, move on to and perform more below, above end depends on the needs.
With reference to Fig. 5, its display is according to another embodiment of the method for making of micro-electromechanical pressure meter of the present invention, and wherein part steps utilizes made by CMOS (Complementary Metal Oxide Semiconductor) technique, and method comprises: provide a substrate, wherein comprises at least one conducting wire; Form one first insulation course on substrate; First and part second conductive plugs structure is formed in the first insulation course; By the first insulation course the film that substrate and has made to be combined or deposit film after etching first insulation course (can utilize the opening 221 in the first insulation course, region in the case for etching should adopt different materials to make from the region for retaining, and select suitable etchant), to form the open cavity of half, and the bottom electrode be electrically connected by the first conductive plugs structure in film is in conducting wire (this film has at least a part to form bottom electrode); Form one second insulation course on film; Forming section second conductive plugs structure in the second insulation course; And a capping is provided, be combined to form an enclosure space with film by the second insulation course, capping has the top electrode corresponding to bottom electrode, and this top electrode is electrically connected on conducting wire by the second conductive plugs structure.Above-mentioned semi-open cavity has an opening to accept extraneous pressure, makes film produce deformation according to extraneous pressure, to reach pressure-sensing function.
Below for preferred embodiment, the present invention is described, the above, be only and make those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.For those skilled in the art, when in spirit of the present invention, can thinking immediately and various equivalence change.Therefore allly change according to concept of the present invention with spirit institute is impartial for it or modifies, all should be included in right of the present invention.Any embodiment of the present invention or claim must not reach whole object disclosed by the present invention or advantage or feature.Summary part and title are only used to the use of auxiliary patent document retrieval, are not used for limiting interest field of the present invention.
Claims (15)
1. a micro-electromechanical pressure meter, is characterized in that, comprises:
One substrate, has at least one conducting wire;
One film, is positioned at this surface, and between this film and this substrate, form the open cavity of half, this semi-open cavity has an opening to accept extraneous pressure; And
One capping, being positioned at above this film and forming an enclosure space with this film, this capping has the top electrode arranged corresponding to this film, and this film has at least a part to form bottom electrode, and this upper and lower electrode forms inductance capacitance to sense this extraneous pressure;
Wherein, this bottom electrode and this top electrode are electrically connected on this conducting wire respectively.
2. micro-electromechanical pressure meter as claimed in claim 1, wherein, this enclosure space itself is completely closed, or this micro-electromechanical pressure meter also comprises a logical pressure path, and this enclosure space is communicated in a reference pressure source via this logical pressure path.
3. micro-electromechanical pressure meter as claimed in claim 2, wherein, this logical pressure path is arranged in this capping.
4. micro-electromechanical pressure meter as claimed in claim 2, wherein, this capping and this film combine via an insulation course, and this logical pressure path is arranged in this insulation course.
5. micro-electromechanical pressure meter as claimed in claim 4, wherein, this film and this insulation course are respectively silicon layer and the insulation course of an insulating layer covered with silicone.
6. micro-electromechanical pressure meter as claimed in claim 1, wherein, this film has at least one quality structure, and the other parts of the thinner thickness film of this quality structure are high.
7. micro-electromechanical pressure meter as claimed in claim 1, wherein, also comprises a conductive plugs structure, this bottom electrode is electrically connected on this conducting wire.
8. micro-electromechanical pressure meter as claimed in claim 1, wherein, this top electrode passes through a conductive plugs anatomical connectivity in this conducting wire, and this micro-electromechanical pressure meter also comprises: the electrical isolation structure of position between this bottom electrode and this conductive plugs structure, this electrical isolation structure is a space or is insulating material.
9. micro-electromechanical pressure meter as claimed in claim 1, wherein, also comprises multiple restraining mass, is arranged at the opening part of this semi-open cavity.
10. micro-electromechanical pressure meter as claimed in claim 1, wherein, this capping is provided with at least one stop block in the one side of this film.
11. micro-electromechanical pressure meters as claimed in claim 1, wherein, this substrate comprises silicon underlying substrate.
The method for making of 12. 1 kinds of micro-electromechanical pressure meters, is characterized in that, comprises:
One substrate is provided, wherein comprises at least one conducting wire;
There is provided a film, and open cavity in this surface to make forming half between this film and this substrate in conjunction with this film, wherein this film has at least a part to form bottom electrode;
This thin-film electro is connected to this conducting wire;
There is provided a capping, being incorporated into above this film and forming an enclosure space with this film, this capping has the top electrode corresponding to film; And
Be electrically connected this top electrode in this conducting wire,
Wherein this semi-open cavity has an opening to accept extraneous pressure, makes this film produce deformation according to this extraneous pressure.
The method for making of 13. micro-electromechanical pressure meters as claimed in claim 12, wherein, there is provided a capping, the step be incorporated into above this film comprises: this capping and this film are combined via an insulation course, and this film and this insulation course are respectively silicon layer and the insulation course of an insulating layer covered with silicone.
The method for making of 14. 1 kinds of micro-electromechanical pressure meters, is characterized in that, comprises:
One substrate is provided, wherein comprises at least one conducting wire;
Form one first insulation course on this substrate;
First and part second conductive plugs structure is formed in this first insulation course;
By the first insulation course, this substrate and a film are combined or deposit this film after etching first insulation course, to form the open cavity of half, wherein this film has at least a part to form bottom electrode;
This bottom electrode is electrically connected on this conducting wire by the first conductive plugs structure;
Form one second insulation course on film;
Forming section second conductive plugs structure in the second insulation course; And
There is provided a capping, this capping is combined to form an enclosure space with film by the second insulation course, and this capping has the top electrode corresponding to bottom electrode, and this top electrode is electrically connected on this conducting wire by this second conductive plugs structure,
Wherein this semi-open cavity has an opening to accept extraneous pressure, makes this film produce deformation according to this extraneous pressure.
The method for making of 15. micro-electromechanical pressure meters as described in claim 12 or 14, wherein, this substrate comprises silicon underlying substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410273047.5A CN104931188A (en) | 2014-03-20 | 2014-06-18 | Microcomputer electric pressure gauge and manufacture method thereof |
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| CN2014101052164 | 2014-03-20 | ||
| CN201410105216 | 2014-03-20 | ||
| CN201410273047.5A CN104931188A (en) | 2014-03-20 | 2014-06-18 | Microcomputer electric pressure gauge and manufacture method thereof |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589054A (en) * | 1984-02-21 | 1986-05-13 | Vaisala Oy | Capacitive pressure detector independent of temperature |
| CN87104354A (en) * | 1986-06-23 | 1988-01-20 | 罗斯蒙德公司 | Capacitive pressure transducer |
| DE19541616A1 (en) * | 1995-11-08 | 1997-05-15 | Klaus Dr Ing Erler | Micro-mechanical component e.g. capacitive pressure sensor |
| US6131466A (en) * | 1996-07-31 | 2000-10-17 | Sgs-Thomson Microelectronics S.R.L. | Integrated piezoresistive pressure sensor |
| CN1297144A (en) * | 1999-10-06 | 2001-05-30 | 株式会社山武 | Capacitive pressure transducer |
| CN1466780A (en) * | 2000-09-29 | 2004-01-07 | 株式会社山武 | Pressure sensor and method for manufcturing pressure sensor |
| CN102062662A (en) * | 2010-11-05 | 2011-05-18 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN103115704A (en) * | 2013-01-25 | 2013-05-22 | 中北大学 | High-temperature pressure sensor and production method thereof |
| CN103344377A (en) * | 2013-07-16 | 2013-10-09 | 东南大学 | Capacitive barometric sensor of micro electro mechanical system |
-
2014
- 2014-06-18 CN CN201410273047.5A patent/CN104931188A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589054A (en) * | 1984-02-21 | 1986-05-13 | Vaisala Oy | Capacitive pressure detector independent of temperature |
| CN87104354A (en) * | 1986-06-23 | 1988-01-20 | 罗斯蒙德公司 | Capacitive pressure transducer |
| DE19541616A1 (en) * | 1995-11-08 | 1997-05-15 | Klaus Dr Ing Erler | Micro-mechanical component e.g. capacitive pressure sensor |
| US6131466A (en) * | 1996-07-31 | 2000-10-17 | Sgs-Thomson Microelectronics S.R.L. | Integrated piezoresistive pressure sensor |
| CN1297144A (en) * | 1999-10-06 | 2001-05-30 | 株式会社山武 | Capacitive pressure transducer |
| CN1466780A (en) * | 2000-09-29 | 2004-01-07 | 株式会社山武 | Pressure sensor and method for manufcturing pressure sensor |
| CN102062662A (en) * | 2010-11-05 | 2011-05-18 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN103115704A (en) * | 2013-01-25 | 2013-05-22 | 中北大学 | High-temperature pressure sensor and production method thereof |
| CN103344377A (en) * | 2013-07-16 | 2013-10-09 | 东南大学 | Capacitive barometric sensor of micro electro mechanical system |
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