CN104916561B - Tube core detection method - Google Patents
Tube core detection method Download PDFInfo
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- CN104916561B CN104916561B CN201410089602.9A CN201410089602A CN104916561B CN 104916561 B CN104916561 B CN 104916561B CN 201410089602 A CN201410089602 A CN 201410089602A CN 104916561 B CN104916561 B CN 104916561B
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Abstract
The present invention discloses a kind of tube core detection method, includes: providing one first tube core to be measured, includes a lower surface, a side surface and a upper surface；And the first light source of one capable of emitting one first light of offer is located at below the first tube core to be measured, part of first light is via incident first tube core to be measured in side surface, and the first light of part is via the first tube core to be measured of lower surface incidence.
Description
Technical field
The present invention relates to a kind of tube core detection methods, and it is capable of emitting to provide one more particularly to a kind of tube core detection method
The first light source of one first light is located at below the first tube core to be measured, and part of first light is via the one of the first tube core to be measured
The first tube core to be measured of side surface incidence, the first light of part is via a lower surface incidence first of the first tube core to be measured to test tube
Core.
Background technique
Light emitting diode (Light Emitting Diode, LED) is solid semiconductor illuminating element, and advantage is power consumption
Low, the thermal energy of generation is low, and long working life is shockproof, small in size, and reaction speed is fast and has good photoelectric characteristic, such as surely
Fixed emission wavelength.Therefore light emitting diode is widely used in household electrical appliance, equipment indicating lamp and photovoltaic etc..
In the semiconductor fabrication process of light emitting diode, often because some the reason of not can avoid form defect,
Therefore in order to maintain the stabilization of product quality, when carrying out semiconductor fabrication process, need to be directed to product produced according to client or
User's requirement specification carries out defects detection, and the product of client or user's requirement specification will not be met further according to the result of detection
Detection, or the reason of causing defect is analyzed, then the generation of defect is avoided or reduced by the adjustment of manufacture craft parameter, with
Achieve the purpose that promote manufacture craft yield and reliability.
Summary of the invention
To solve the above problems, the present invention provides a kind of tube core detection method, include: one first tube core to be measured, packet are provided
Containing a lower surface, a side surface and a upper surface；And provide capable of emitting one first light first light source be located at first to
Below test tube core, part of first light is via incident first tube core to be measured in side surface, and the first light of part is via lower surface
Incident first tube core to be measured.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate appended attached drawing
It is described in detail below.
Detailed description of the invention
Fig. 1 is the schematic diagram of tube core detection device disclosed in one embodiment of the invention.
Fig. 2A is the top view of an electrode structure of the revealed standard tube core of one embodiment of the invention.
Fig. 2 B is the partial schematic diagram of the revealed tube core detection device of one embodiment of the invention.
Fig. 3 A is the top view of an electrode structure of the revealed tube core to be measured of one embodiment of the invention.
Fig. 3 B is the partial schematic diagram of the revealed tube core detection device of one embodiment of the invention.
Fig. 4 is the flow chart of the revealed tube core detection method of one embodiment of the invention.
Fig. 5 is an image schematic diagram of the present invention according to a standard tube core.
Fig. 6 is an image schematic diagram of the present invention according to a tube core to be measured.
Fig. 7 is an image schematic diagram of the present invention according to a tube core to be measured.
Fig. 8 A is an image schematic diagram of the present invention according to a standard tube core.
Fig. 8 B is an image schematic diagram of the present invention according to a tube core to be measured.
Fig. 8 C is a defect area schematic diagram of the present invention according to a tube core to be measured.
Fig. 9 is tube core testing result disclosed in one embodiment of the invention.
Symbol description
1: tube core detection device
2: tube core supporting part
3: tube core
3a: standard tube core
3b: the first tube core to be measured
D: Cutting Road
S1: lower surface
S2: side surface
S3: upper surface
11: photosensitive element
12: the four light sources
121: the four light
13: second light source
131: the second light
14: first light source
141: the first light
15: third light source
151: third light
30: semiconductor laminated
31: the first type semiconductor layers
32: the second type semiconductor layers
33: active layers
34: catoptric arrangement
35a: electrode structure
35b: electrode structure
351: defect
36: substrate
5: tube core to be measured
50: electronic pads
51: semiconductor laminated
6: tube core to be measured
60: electronic pads
61: semiconductor laminated
61a: image
7: standard tube core
70: electronic pads
71: semiconductor laminated
71a: image
61b: defect image
7a: first direction
7b: second direction
Specific embodiment
In order to make the description of the present invention more exhaustive and complete, it please refers to the description of the following example and cooperates related figure
Show.Embodiment described below is only intended to illustrate light-emitting component of the invention, not limits the invention to implementation below
Example.This specification is recorded in size, material, shape, relative configuration of the constituent part in embodiment etc. in the note not limited
Under load, the scope of the present invention is not limited to this, and is only simple explanation.And size or the position of each diagrammatically shown component
Set relationship etc., it can be due in order to clearly state the situation exaggerated.Moreover, in the following description, for appropriate omission
It is described in detail, same or connatural component same name, symbol is shown.
One photoelectric cell, such as light emitting diode, manufacture are by a chip by plated film, the Huang in leading portion manufacture craft
After the definition of light lithographic fabrication process, using cutting step, more independent tube cores are eventually formed.This more independent tube cores need
It according to client or user's requirement specification, is detected using a series of tube core, client or user's requirement specification will not met
Tube core is sorted out.In one embodiment of this invention, this chip includes the GaAs to AlGaInP of growing up (AlGaInP)
(GaAs) chip, or the sapphire (Al to InGaN of growing up (InGaN)2O3) chip, gallium nitride (GaN) chip or carbonization
Silicon (SiC) chip, or silicon wafer, germanium wafer or gallium arsenide wafer to iii-v solar battery lamination of growing up.In this
Using Metalorganic chemical vapor deposition method (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy method on chip
(HVPE), it is semiconductor laminated with photoelectric characteristic to form one for vapour deposition method or ion plating method, such as (the light- that shines
Emitting) lamination or photovoltaic (photovoltaic) lamination.After the completion of wafer epitaxial, it can be formed by vapor deposition manufacture craft
Electrode, forms Cutting Road using yellow light, etching process, cuts or be cut by laser step by knife finally along Cutting Road,
It is separated from each other each tube core, that is, forms more independent tube cores.
From the above, for chip after cutting forms more independent tube cores, this more independent tube cores can be attached at one
Tube core supporting part, wherein tube core supporting part can be the glue material with stickiness or ductility, such as blue membrane adhesive tape or ultraviolet optical cement
Band is to select blue membrane adhesive tape as tube core supporting part in one embodiment of this invention.Cutting step above-mentioned can also be in chip
Tube core supporting part is attached to carry out again later.Fig. 1 is the signal of tube core detection device 1 disclosed in one embodiment of the invention
Figure.As shown in Figure 1, by taking single tube core to be measured as an example, tube core detection device 1 includes one first tube core 3b to be measured, tube core carrying
Portion 2 is to carry the first tube core 3b to be measured, wherein the first tube core 3b to be measured includes a lower surface S1, a upper surface S3 and side table
Face S2.Electro-optical device 100 and a positive electro-optical device 110 are backwards to detect tube core defect comprising one for tube core detection device 1, wherein backwards
Electro-optical device 100 is located at 2 lower section of tube core supporting part, and positive electro-optical device 110 is located at 2 top of tube core supporting part.It is wrapped backwards to electro-optical device 100
First light source 14 containing capable of emitting one first light 141 is below the first tube core 3b to be measured, capable of emitting one second light
131 second light source 13 is located at below the first tube core 3b to be measured, wherein the first light 141 is with an oblique angle incidence first to test tube
Core 3b, the second light 131 generally tube core 3b to be measured of vertical incidence first, in other words, 131 incidence lower surface S1's of the second light
Angle of the angle less than 141 incidence lower surface S1 of the first light.Specifically, the first light 141 is with an oblique angle, portions incident
In lower surface S1, portions incident is in side surface S2, and the second light 131 is generally normally incident in lower surface S1.Positive light dress
It sets the 110 third light sources 15 comprising a capable of emitting third light 151 to be located above the first tube core 3b to be measured, one capable of emitting 1 the
4th light source 12 of four light 121 is located above the first tube core 3b to be measured, wherein the 4th light 121 is with an oblique angle incidence first
Tube core 3b to be measured, the generally tube core 3b to be measured of vertical incidence first of third light 151, in other words, the incident upper table of third light 151
Angle of the angle of face S3 less than 121 incidence upper surface S3 of the 4th light.Tube core detection device 1 includes that a photosensitive element 11 is located at
The top of first tube core 3b to be measured is to collect by the first light 141, the second light of the first tube core 3b reflection or refraction to be measured
131, third light 151 or the 4th light 121.In one embodiment of this invention, first light source 14, second light source 13, third
Light source 15 or the 4th light source 12 are a pulsed xenon flash lamp.First light source 14 or the 4th light source 12 are one with a center
The ring structure in aperture.
As shown in Figure 1, in one embodiment of this invention, the first tube core 3b to be measured includes a substrate 36, semiconductor is folded
Layer 30 is located on the side of substrate 36 and an electrode structure 35b is on semiconductor laminated 30 upper surface S3.Substrate 36 can
For sapphire substrate or III-V race's semiconductor substrate.Semiconductor laminated 30 include one first type semiconductor layer 31, a second type half
Conductor layer 32 and an active layers 33 are between the first type semiconductor layer 31 and the second type semiconductor layer 32.First type is partly led
Body layer 31 and the second type semiconductor layer 32, for example, clad (cladding layer) or limiting layer (confinement
Layer), electronics and hole can be provided respectively, electronics and hole under electric current driving active layers (active layer) 33 it is compound with
Issue a light.Semiconductor laminated 30 material includes III-V race's semiconductor material, such as AlxInyGa(1-x-y)N or
AlxInyGa(1-x-y)P, wherein 0≤x, y≤1；(x+y)≤1.According to the material of active layers 33, semiconductor laminated 30 capable of emitting wave
The long feux rouges between 610nm and 650nm, green light or wavelength of the wavelength between 530nm and 570nm are between 450nm
And the blue light between 490nm.In order to increase the light extraction efficiency of tube core, in one embodiment of this invention, the first tube core to be measured
3b is located on the other side of substrate 36 comprising a catoptric arrangement 34, that is, on the lower surface S1 of the first tube core 3b to be measured, wherein
Catoptric arrangement 34 is single or multi-layer structure, such as Bragg mirror (Distributed Bragg Reflector, DBR),
The material of catoptric arrangement 34 includes any group of metal, metal oxide, oxide, nitride, nitrogen oxides or above-mentioned material
It closes.First tube core 3b to be measured has a height between 50 μm~200 μm.
Fig. 2A is the top view of an electrode structure 35a of the revealed standard tube core 3a of one embodiment of the invention.Fig. 2 B is
The partial schematic diagram of the revealed tube core detection device of one embodiment of the invention.As shown in Figure 2 B, the first light of part 141 is incident
It can be by counter the first light of the part ﹔ 141 of penetrating of catoptric arrangement 34 then via the side of standard tube core 3a when the lower surface S1 of standard tube core 3a
Surface S2 incidence standard tube core 3a, then penetrates substrate 36 and semiconductor laminated 30, is not covered via by electrode structure 35a upper
Surface S3 is projected.That is, when passing through the first light 141 via side surface S2 incidence standard tube core 3a, the first light of part
141 fail through electrode structure 35a and enter the photosensitive element 11 of Fig. 1, then form first light of the part An Qu ﹔ 141
The photosensitive element 11 for not entered Fig. 1 by upper surface S3 that electrode structure 35a is covered is then penetrated, a clear zone is then formed, then
It by combining dark space and clear zone, is handled via a computer software, constitutes and refer to shadow according to one of electrode structure 35a shown in Fig. 2A
Picture.Fig. 3 A is the top view of an electrode structure 35b of the revealed tube core 3b to be measured of one embodiment of the invention.Fig. 3 B is the present invention
The partial schematic diagram of the revealed tube core detection device of one embodiment.As shown in Figure 3A, when electrode structure 35b includes a defect
351, such as break, the first light 141 can penetrate this defect 351, enter the photosensitive element 11 of Fig. 1 without by electrode structure
35b masking, then the testing image according to electrode structure 35b shown in Fig. 3 A is constituted according to the above method, this testing image is taken
Come the difference of pattern or shape compared with reference image, the defect of electrode structure 35b in Fig. 3 A is thus detected.But the type of defect
It is not limitation with the defect of electrode structure, any defect for being formed in the first surface tube core 3b to be measured can thus method and apparatus
It is detected.
Fig. 4 is a flow chart of the revealed tube core detection method of one embodiment of the invention.
Firstly, providing a tube core to be measured, such as the first tube core 3b to be measured shown in Fig. 1 or Fig. 3 B.One tube core is then provided
Supporting part 2 is to carry tube core to be measured, and provides tube core detection to be measured required light source.As shown in Figure 1, providing capable of emitting first
The first light source 14 of light 141, such as pulsed xenon flash lamp are located at below the first tube core 3b to be measured, part first
Light 141 can penetrate tube core supporting part 2, via side surface S2 the first tube core 3b to be measured of incidence of the first tube core 3b to be measured, part
First light 141 via the first tube core 3b to be measured the first tube core 3b to be measured of lower surface S1 incidence.Specifically, the first light
141 can penetrate the substrate 36 and semiconductor laminated 30 of the first tube core 3b to be measured, when the first tube core 3b to be measured has catoptric arrangement 34
When, the catoptric arrangement 34 of the first tube core 3b to be measured can the first tube core 3b to be measured of reflective portion directive lower surface S1 the first light
141。
Secondly, collecting an image of tube core to be measured using tube core detection device 1 shown in FIG. 1.It is this hair referring to figure 5.
The bright image using another tube core 5 to be measured collected by tube core detection device 1, wherein tube core to be measured 5 includes electronic pads 50 and half
Conductor lamination 51.And please referring to Fig. 6 is using the image of another tube core 6 to be measured collected by tube core detection device 1, wherein to be measured
Tube core 6 includes electronic pads 60 and semiconductor laminated 61.
Secondly, providing an image of a standard tube core.The image of another standard tube core 7 of Fig. 7 display present invention is please referred to,
Plays tube core 7 includes electronic pads 70 and semiconductor laminated 71.
Secondly, providing one first judgment step, the image color of the image color and standard tube core of tube core more to be measured is
Whether no coloured difference and this color difference difference are more than a standard, such as client's permissible range, if color difference difference is in client
Then it is judged as non-defective unit in permissible range, is judged as defective products if color difference difference is outside client's permissible range.Once being determined as
Defective products then defines the overproof position of the color difference difference of the image color of tube core to be measured and the image color of standard tube core
For a defective locations.For example, the image color of the image color of tube core 5 more to be measured and standard tube core 7, as shown in figure 5,
Semiconductor laminated the 51 of tube core 5 to be measured do not have color difference difference with semiconductor laminated the 71 of standard tube core 7, and the electricity of tube core to be measured 5
The coloured difference of electronic pads 70 of polar cushion 50 and standard tube core 7, judges to be measured if this color difference difference is in client's permissible range
Tube core 5 is non-defective unit.For example, the image color of the image color of tube core 6 more to be measured and standard tube core 7, as shown in fig. 6,
The electronic pads 60 of tube core 6 to be measured and the electronic pads 70 of standard tube core 7 do not have color difference difference, and tube core to be measured 6 is semiconductor laminated
61 with semiconductor laminated 71 coloured differences of standard tube core 7, judge if this color difference difference is outside client's permissible range to be measured
Tube core 6 is defective products, and tube core 6 to be measured is after being determined as defective products, then by the image color of tube core 6 to be measured and standard tube core 7
The overproof position of color difference difference of image color is defined as a defective locations.
Secondly, one second judgment step is provided, wherein the second judgment step is contained in defined in the first judgment step
Whether the size of defective locations measurement defect is above standard, and is judged as good if the size of defect is in client's permissible range
Product are judged as defective products if the size of defect is outside client's permissible range.By taking tube core 6 to be measured as an example.Fig. 8 A is standard pipe
Image 71a, Fig. 8 B of the part semiconductor lamination 71 of core 7 are the image 61a of the part semiconductor lamination 61 of tube core 6 to be measured,
Via comparison image 61a and image 71a, and detecting the image 61a of detection tube core 6 and the image 71a of standard tube core 7 has color difference
Difference, the position for defining this coloured difference is a defective locations, and has a defect image 61b, as shown in Figure 8 C.If this is lacked
It falls into image 61b and judges color difference difference in the first judgment step outside client's permissible range, then further in the second judgement step
Whether the size of rapid analyzing defect image 61b is outside client's permissible range, if the size of defect image 61b allows model in client
Then it is judged as non-defective unit in enclosing, is judged as defective products if the size of defect image 61b is outside client's permissible range.
Then by a platform (not shown) of mobile carrying tube core supporting part 2, the tube core detection method of earlier figures 4 is repeated
Carry out the detection of other tube cores to be measured.
Fig. 9 is the result of the tube core detection of tube core detection device disclosed in one embodiment of the invention.Multiple tube cores 3
In on tube core supporting part 2, each tube core 3 is separated from each other and by multiple Cutting Road d(scribe line) it surround, wherein Cutting Road d
With a width D, so that a back side light of tube core detection device 1 shown in FIG. 1, such as the first light 141, tube core can be penetrated
Supporting part 2, the side surface (not shown) of incident tube core 3, such as the side surface S2 of the first tube core 3b to be measured.Pass through mobile carrying pipe
One platform (not shown) of core supporting part 2 is repeated with a linear direction of travel, such as first direction 7a or second direction 7b
The tube core detection method of earlier figures 4.As shown in figure 9, pipe of multiple tube cores 3 via tube core detection device 1 and Fig. 4 shown in FIG. 1
Core detection method can sort out the non-defective unit in client's permissible range, such as tube core 3a, and sort out outside client's permissible range not
Non-defective unit, such as tube core 3b.
Though above each attached drawing and explanation only respectively correspond specific embodiment, however, illustrated in each embodiment or openly
Element, embodiment, design criteria and technical principle except showing mutually conflict, contradiction each other or in addition to being difficult to common implementing,
When can according to needed for it is any referring to, exchange, collocation, coordinate or merge.
Although the present invention has been disclosed above, range, implementation sequence or the use that it is not intended to limiting the invention
Material and process for making.For various modifications and change made by the present invention, spirit and model of the invention are not all departed from
It encloses.
Claims (9)
1. a kind of tube core detection method, includes:
One first tube core to be measured is provided, includes a lower surface, a side surface and a upper surface；And
The first light source for providing capable of emitting one first light is located at below first tube core to be measured,
Part of first light is via incident first tube core to be measured in the side surface, and part first light is via the following table
Face incidence first tube core to be measured, and
Wherein first tube core to be measured also includes that a substrate, semiconductor lamination are located at the side of the substrate, an electrode structure position
On this is semiconductor laminated and a catoptric arrangement is located at the other side of the substrate, and wherein the catoptric arrangement can reflective portion
First light.
2. tube core detection method as described in claim 1, also comprising providing a tube core supporting part to carry this first to test tube
Core, wherein first light can penetrate the tube core supporting part.
3. tube core detection method as described in claim 1, also comprising providing the second light source position of capable of emitting one second light
Below first tube core to be measured, wherein the angle of the incident lower surface of second light is less than the incident following table of first light
The angle in face.
4. tube core detection method as described in claim 1, also includes:
The third light source for providing a capable of emitting third light is located above first tube core to be measured；And
The 4th light source for providing capable of emitting one the 4th light is located above first tube core to be measured, and wherein the third light is incident
The angle of the upper surface is less than the angle of the incident upper surface of the 4th light.
5. tube core detection method as described in claim 1 is also located on first tube core to be measured comprising providing a photosensitive element
Side obtains an image of first tube core to be measured to collect first light for penetrating first tube core to be measured.
6. tube core detection method as claimed in claim 5, wherein the first light source is a ring structure, the photosensitive element via
Collect first light in one aperture of the ring structure.
7. tube core detection method as claimed in claim 5, also includes:
One first judgment step is provided, wherein first judgment step includes to provide an image of a standard tube core, and compare
The color of the image of the color and standard tube core of the image of first tube core to be measured is to define a defect.
8. tube core detection method as claimed in claim 7, also includes:
One second judgment step is provided, wherein second judgment step includes to measure the size of the defect.
9. tube core detection method as described in claim 1 is also located at the tube core supporting part comprising providing one second tube core to be measured
On, wherein first tube core to be measured and second tube core to be measured are come with a separating distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410089602.9A CN104916561B (en) | 2014-03-12 | 2014-03-12 | Tube core detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410089602.9A CN104916561B (en) | 2014-03-12 | 2014-03-12 | Tube core detection method |
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| Publication Number | Publication Date |
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| CN104916561A CN104916561A (en) | 2015-09-16 |
| CN104916561B true CN104916561B (en) | 2019-06-18 |
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| JPH01138447A (en) * | 1987-11-25 | 1989-05-31 | Nec Corp | Foreign matter detecting method |
| EP1801569A2 (en) * | 2005-12-23 | 2007-06-27 | Basler Aktiengesellschaft | Method and device for detecting cracks in silicon wafers |
| CN102428546A (en) * | 2009-05-22 | 2012-04-25 | 朗姆研究公司 | Arrangements And Methods For Improving Bevel Etch Repeatability Among Substrates |
| CN202259209U (en) * | 2011-10-08 | 2012-05-30 | 浙江正泰太阳能科技有限公司 | Detecting device for crystalline silicon cell slice |
| CN102569119A (en) * | 2011-12-19 | 2012-07-11 | 立晔科技股份有限公司 | Chip or wafer detecting device |
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01138447A (en) * | 1987-11-25 | 1989-05-31 | Nec Corp | Foreign matter detecting method |
| EP1801569A2 (en) * | 2005-12-23 | 2007-06-27 | Basler Aktiengesellschaft | Method and device for detecting cracks in silicon wafers |
| CN102428546A (en) * | 2009-05-22 | 2012-04-25 | 朗姆研究公司 | Arrangements And Methods For Improving Bevel Etch Repeatability Among Substrates |
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| CN102569119A (en) * | 2011-12-19 | 2012-07-11 | 立晔科技股份有限公司 | Chip or wafer detecting device |
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| CN104916561A (en) | 2015-09-16 |
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