CN104900563A - Substrate processing device and method - Google Patents
Substrate processing device and method Download PDFInfo
- Publication number
- CN104900563A CN104900563A CN201410710979.1A CN201410710979A CN104900563A CN 104900563 A CN104900563 A CN 104900563A CN 201410710979 A CN201410710979 A CN 201410710979A CN 104900563 A CN104900563 A CN 104900563A
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- China
- Prior art keywords
- substrate
- board treatment
- substrate board
- ring
- object thing
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000009434 installation Methods 0.000 claims abstract description 55
- 230000005611 electricity Effects 0.000 claims abstract description 41
- 239000002002 slurry Substances 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 40
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 35
- 239000004568 cement Substances 0.000 claims description 21
- 230000000414 obstructive effect Effects 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 6
- 238000004049 embossing Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 230000007850 degeneration Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 238000009940 knitting Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen radical Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
Abstract
The invention provides a substrate processing device and a method. The substrate processing device comprises a procedure cavity, a support unit, a baffle, an air supply part, an electric slurry part and a blocking member. The support unit comprises a substrate and a ceramic ring. Embossment is formed on the top of the substrate so that the static electricity is prevented by guaranteeing the smooth passage of air between the safety belt and the substrate; on the ceramic ring, partial gasket is utilized to form a gap and a guiding part. The blocking member enables the frame ring to be covered and the installation belt to be exposed in the process of electric slurry operation, which prevents the frame ring from degeneration and removes the bonding agent left on the surface of the instillation belt.
Description
Technical field
The present invention relates to a kind of Apparatus and method for for the treatment of substrate, more specifically, the present invention relates to a kind of Apparatus and method for utilizing electricity slurry treatment substrate.
Background technology
Have passed through the substrate of preceding working procedure (FEOL:Front End Of Line) operation, its thickness exceedes more than required thickness, thus needs via grinding back surface (Back Grinding) operation thinning.But after back grinding procedure, the thickness of substrate is excessively thin, be thus not easy the operation (Handling) carrying out substrate.Therefore, be substrate operation, utilize cement that carrier is attached to substrate.Carrier is removed after as the chip join (Chip Bonding) of subsequent handling, underfill (Underfill), shaping (Molding) operation.
After carrier is removed, substrate operates under the state being attached to installation band fixing in frame loops.Installation band not only makes the processing ease of substrate, and prevents chip from scattering when substrate is separated into individual chip.
On the substrate removing carrier, cement is removed not exclusively and leaves a part.Remaining cement is not easy to remove.
Summary of the invention
Embodiments of the invention provide a kind of substrate board treatment and method, and it easily can remove cement residual on the substrate after eliminating carrier.
In addition, embodiments of the invention provide a kind of substrate board treatment and the method that can prevent frame loops sex change.
In addition, embodiments of the invention provide a kind of substrate board treatment and method of twisted phenomena of substrate when can prevent operation process.
In addition, embodiments of the invention provide a kind of substrate board treatment and method, and it can prevent the generation of when non-conducting film lamination (NCF Lamination) contingent cavity (Void).
In addition, embodiments of the invention provide a kind of installation can be prevented to be with the substrate board treatment of electrostatic between pedestal and method.
Object of the present invention is not limited to this, and those skilled in the art can clearly understand other object NM according to following record.
The invention provides a kind of substrate board treatment.According to an embodiment, substrate board treatment comprises: operation chamber, and its inside is formed with space; Support unit, it is positioned at operation chamber interior to support handling object thing; Gas supply department, it is to operation chamber interior supply process gases; And support unit comprises: pedestal; Ceramic ring, it provides around pedestal; Also comprise pad, it provides gap between the handling object thing be positioned in support unit and ceramic ring.
In addition, for making handling object thing be positioned at pedestal top, the top edge portion being also included in ceramic ring protrudes the guide portion provided.Described guide portion is provided as multiple, and it is spaced from each other around pedestal.
In addition, embossing is formed with at the top of pedestal.
Handling object thing comprises: frame loops; Be fixed on the installation band of the medial surface of frame loops; And be attached to the substrate at the top that installation is with; And this substrate board treatment also comprises obstructive component, it is the ring-shaped of cover framework ring, is not exposed to electricity slurry to make frame loops.
Obstructive component provides to make installation band be exposed to electricity slurry.
The invention provides substrate processing method using same.According to an embodiment, this substrate processing method using same comprises: be fixed on the installation of frame loops with bringing the substrate adhering to and complete grinding back surface to form the step of handling object thing; Handling object thing is made to be positioned at the step of substrate board treatment; And, utilize the step exciting the process gases into electricity slurry to remove the cement residue of substrate surface.
In addition, the method is characterized in that, in the step of this removal cement residue, make described installation band be exposed to this electricity slurry.
In addition, the method is characterized in that, in the step of this removal cement residue, described frame loops is covered by choke ring, described installation band can't help this choke ring cover.
Embodiments of the invention easily can remove cement residual on the substrate after eliminating carrier.
In addition, embodiments of the invention make frame loops minimally be exposed in electricity slurry, thus can prevent the sex change of frame loops.
In addition, according to embodiments of the invention, be the discharge of air between induction installation band and pedestal, ceramic ring provide pad etc., thus air is easily discharged, the twisted phenomena etc. of substrate when can prevent operation from carrying out thus.
In addition, embodiments of the invention make installation band be exposed to electricity slurry, remove cement, thus can prevent the generation in the cavity (Void) that can occur when non-conducting film lamination (NCF Lamination).
In addition, embodiments of the invention form embossing at pedestal top, thus can prevent the electrostatic between installation band with pedestal.
Accompanying drawing explanation
Fig. 1 is the stereogram of the example showing handling object thing handled in the substrate board treatment of the embodiment of the present invention.
Fig. 2 to Fig. 8 is for sequentially show the flow chart of the handling object thing shown in construction drawing 1.
Fig. 9 is the profile of the substrate board treatment showing one embodiment of the present of invention.
Figure 10 shows the pedestal of Fig. 9 and the stereogram of ceramic ring.
Figure 11 shows the pedestal of Fig. 9 and the vertical view of obstructive component.
Figure 12 is the profile showing support unit that the A-A ' line along Figure 11 intercepts and obstructive component.
Figure 13 and Figure 14 is the profile of the substrate board treatment respectively illustrating another embodiment of the present invention.
Wherein, being described as follows of Reference numeral:
A-A' line
G gap
50 handling object things
51 substrates
51a substrate
51b substrate
51c substrate
52 silicon through electrodes
53 projections
54 carriers
55 cements
55a knitting layer
61 chip join
62 underfill
63 is shaping
71 frame loops
72 installation bands
310 operation chambers
311 main bodys
312 closed covers
313 steam vents
314 diffusion space
317 exhaust lines
320 support units
322 pedestals
324 ceramic rings
324a holding tank
324b guide portion
324c pad
330 baffle plates
331 dispensing orifices
340 electricity slurry generating units
341 oscillators
342 waveguides
343 dielectric tubes
350 obstructive components
351 choke rings
352 main bodys
353 inside portions
354 outside portions
355 lift components
361 carriage release levers
362 bar/the first bars
363 bar/the second bars
364 bars/the 3rd bar
365 supporting springs
368 drive divisions
370 gas supply departments
372 gas feedthroughs
374 gases preserve portion
376 gas ports
410 exhaustion plates
411 steam vents
Embodiment
Referring to accompanying drawing, illustrate in greater detail embodiments of the invention.Embodiments of the invention can be deformed into variform, should not be construed as scope of the present invention and are defined in following examples.The embodiment of the present invention provides for more completely the present invention being described to those skilled in the art.Therefore, for more clearly emphasizing, the shape of assembly in accompanying drawing is lavished praise on oneself.
Fig. 1 is for showing the stereogram of the handling object thing provided in the substrate board treatment of the embodiment of the present invention, and Fig. 2 to Fig. 8 is for sequentially show the flow chart of the handling object thing shown in construction drawing 1.
As shown in Figures 1 to 8, the substrate 51 completing preceding working procedure (FEOL) operation is as shown in Figure 2 provided.On the substrate 51, be formed with silicon through electrode (TSV:Through Silicon Via) 52 as shown in Figure 3 successively and be engaged in the projection 53 of carrier 54.Carrier 54, as the plate of silicon or glass material, when substrate 51 is through back grinding procedure, is difficult to operation, thus, needs the operation being provided for substrate 51 because thickness is very thin.Carrier 54 is engaged in substrate 51 top by cement 55.
For reducing the package size of encapsulation (Package), the substrate 51 being attached with carrier 54 is provided to grinding back surface (Back Grinding) operation.The substrate 51 that have passed through preceding working procedure (FEOL) operation due to thickness unnecessarily blocked up, thus as shown in Figure 4, in grinding step, substrate 51 grinding back surface is obtained very thin overleaf.
After back grinding procedure, substrate 51a carries out upside-down mounting (flip), chip join (chip bonding) 61 as shown in Figure 5.And, as shown in Figure 6, carry out underfill (under fill) 62 and shaping (molding) 63 operation successively.
As shown in Figure 7, the substrate 51b completing shaping 63 operations is attached on installation band 72 fixing in frame loops 71.Frame loops 71 is for having the ring-shaped of the radius being greater than substrate 51b, and it provides with stainless steel (Stainless) or SUS material.The installation film of band 72 as thinner thickness, film itself is difficult to supporting substrate 51b, is thus fixed in frame loops 71.Installation band 72 is formed by 3 layers, by substrate (Base) film, substrate engage knitting layer and the protective film that it is protected is formed.Frame loops 71 has the radius being greater than substrate 51b, and when thus observing from top, region between frame loops 71 and substrate 52b, installation band 72 is exposed to outside.
After substrate 51b is attached to installation band 72, remove carrier 54 as shown in Figure 8.After carrier 54 is removed, installation band 72 temporarily substitutes carrier 54 and acts on, and the state being attached to installation band 72 with substrate 51c is supplied to operation.Frame loops 71 and installation band 72 make the operation of substrate 51c more easy.And installation band 72, when substrate 51c scribing (Dicing) is separated into individual chip, makes chip not scatter because of engaging force or lose.
Carrier 54 remains cement 55a at the top of substrate 51c after removing, and thus requires the additional operation being used for carrying out this removing.
After the residual joint mixture 55a removing step at substrate 51c top, can perform and non-conducting film (NCF:Non Conductive Film) hot pressing is invested substrate 51c top to block non-conducting film lamination (NCF Lamination) operation in gap between projection 53.Now, when having cement at the remained on surface of installation band 72, the fringe region of non-conducting film is mounted and engages with cement residual on band 72, thus can occur in the problem occurring cavity (Void) in the slot between projection 53.
Fig. 9 is the figure of the substrate board treatment 30 showing one embodiment of the present of invention.As shown in Figure 9, substrate board treatment 30 comprises operation chamber 310, support unit 320, baffle plate 330, electricity slurry generating unit 340, obstructive component 350 and gas supply department 370.Substrate board treatment 30 performs the operation utilizing electricity slurry to remove the cement 55a residuing in substrate 51c and the cement residuing in installation band 72 surface.
Operation chamber 310 provides the space performing operation process.Operation chamber 310 has main body 311 and closed cover 312.Main body 311 top is opened wide, and is formed with space in inside.The opening (not shown) of coming in and going out for handling object thing 50 is formed, opening opening and closing by the open and close member (not shown) of such as slot door (slit door) in the side of main body 311.Open and close member performs closing openings during handling object thing 50 processes in operation chamber 310, when handling object thing 50 moves into operation chamber 310 inside and when taking out of outside to operation chamber 310, opens opening.
Steam vent 313 is formed at the lower part wall of main body 311.Steam vent 313 is connected with exhaust line 317.Regulate the internal pressure of operation chamber 310 via exhaust line 317, it is outside that the byproduct of reaction occurred in operation is expelled to operation chamber 310.
Closed cover 312 is combined with the top wall of main body 311, the open-top of main body covered 311, makes main body 311 inner airtight.The upper end of closed cover 312 is starched generating unit 340 with electricity and is connected.Closed cover 312 is formed diffusion space 314.Diffusion space 314 is more near baffle plate 330, and width broadens more gradually, thus has anti-funnel shaped.
It is inner that support unit 320 is positioned at operation chamber 310.Support unit 320 supports handling object thing 50.Support unit 320 comprises pedestal 322 and ceramic ring 324.Handling object thing 50 is positioned over the top of support unit 320, and make the top of the bottom of substrate 51c and pedestal 322 in opposite directions, the bottom of frame loops 71 and the top of ceramic ring 324 are in opposite directions.Now, installation band 72 and substrate 51c are formed with air layer due to softness between installation band 72 and pedestal 322, and this air layer is difficult to the load by frame loops 71 and is expelled to outside.Therefore, when for operation and reduce the pressure in operation chamber 310 time, air layer expands because of pressure differential, and thus be full of cracks and twisted phenomena etc. can occur in substrate 51c.
Figure 10 shows the pedestal 322 of Fig. 9 and the stereogram of ceramic ring 324.As shown in FIG. 9 and 10, pedestal 322 supporting substrate 51c.Pedestal 322 supporting substrate 51c.Inner at pedestal 322, the cooling flowing path (not shown) for cooling fluid circulation can be formed.Cooling fluid circulates along cooling flowing path, cooling base 322 and handling object thing 50.Due to the circulation of cooling fluid, the temperature of substrate 51c in electric slurry process process is suppressed to rise.Embossing is formed at the top of pedestal 322.Therefore, the air between installation band 72 and pedestal 322 is easily discharged, thus can prevent the electrostatic between installation band 32 and pedestal 322.Ceramic ring 324 around pedestal 322 upper side provide.
Figure 11 is the support unit 320 of Fig. 9 and the vertical view of obstructive component 350, and Figure 12 is for showing the profile of the support unit 320 and obstructive component 350 intercepted along the A-A' shown in Figure 11.As shown in Fig. 9 to Figure 12, be formed with holding tank 324a at the fringe region of ceramic ring 324.Holding tank 324a bend into the inside from the lateral surface of ceramic ring 324, can vertically move to make supporting spring 365.Holding tank 324a can be formed as multiple along the surrounding of ceramic ring 324.According to embodiment, holding tank 324a can form 2 in the side of ceramic ring 324, with the opposite side of ceramic ring 324 of symmetry form 2.
Guide portion 324b is formed at the fringe region of ceramic ring 324.Guide portion 324b boot process object 50, makes handling object thing 50 be positioned on support unit 320.Guide portion 324b is provided as in the edge top of ceramic ring 324 and protrudes upward.When guide portion 324b observes from its top, provide with the shape of a part for cut ring.Guide portion 324b is provided as multiple.Guide portion 324b configures with the ring-type around pedestal 322.The part of guide portion 324b in the fringe region of ceramic ring 324 provides, thus the air between installation band 72 and pedestal 322 is easily discharged.
Gap (Gap) G can be provided between ceramic ring 324 and the frame loops 71 being positioned on ceramic ring 324.Clearance G can be formed by the pad 324c provided between ceramic ring 324 and frame loops 71.According to an example, pad 324c can be provided as and protrude from the top of ceramic ring 324.Pad 324c can the pin of shaping protruding upward or semi-spherical shape provide.Pad 324c is provided as multiple around pedestal 322 with being spaced from each other.By provide clearance G can prevent installation band 72 because of the load of frame loops 71 pressurized.Therefore, make to realize smoothly discharging from the air of discharging between installation band 72 and pedestal 322.
Again as shown in Figure 9, baffle plate 330 is incorporated into the top wall of main body 311 by coupling member.Baffle plate 330, in disc-shape, configures abreast with the top of pedestal 320.Baffle plate 330 is aluminium material, and it provides after surface oxidation.Baffle plate 330 is formed with dispensing orifice 331.For homogeneous supply free radical, dispensing orifice 331 lies on concentric column and is formed by predetermined distance.The electricity slurry spread in diffusion space 314 flows into dispensing orifice 331.Now, the charged particle of such as electronics or ion etc. is captured by baffle plate 330, and uncharged neutral particle such as such as oxygen radical etc. by dispensing orifice 331, thus is supplied to handling object thing 50.
Gas supply department 370 has gas feedthroughs 372, gas preserves portion 374 and gas port 376.The outside that generating unit 340 can be starched at electricity by gas supply department 370 provides.Gas supply department 340 can be provided as one or more.
Be connected with gas in one end of gas feedthroughs 372 and preserve portion 374, be connected with gas port 376 at the other end.Gas preserves the process gases preserved in portion 374 and is supplied to gas port 376 via gas feedthroughs 372.
Process gases is for the residual joint mixture of the residual joint mixture and installation band 72 surface of removing substrate 51c surface.For improving cement removal efficiency, process gases can add the fluorine system gases such as carbon tetrafluoride (CF4) in the first gas.
Gas port 376 is incorporated into the top of dielectric tube 343.It is inner that the process gases supplied via gas port 376 flows into dielectric tube 343.
Electricity slurry generating unit 340 is provided in the top of operation chamber 310, produces and supplies electricity slurry.Electricity slurry generating unit 340 comprises oscillator 341, waveguide 342 and dielectric tube 343.
Oscillator 341 produces microwave.Waveguide 342 connection oscillator 341 and dielectric tube 343.The microwave that oscillator 341 produces flows along waveguide 342, thus is provided to dielectric tube 343.Be supplied to the process gases of dielectric tube 343 inside by gas supply department 370, excite by electromagnetic wave as electric pulpous state state.Electricity slurry flows into diffusion space 314 via dielectric tube 343.
As shown in Fig. 9, Figure 11 and Figure 12, obstructive component 350 cuts off frame loops 71 and is exposed to electricity slurry.Obstructive component 350 makes handling object thing 50 be positioned over the top of support unit 320, and elevate a turnable ladder is positioned over the handling object thing 50 of support unit 320.Obstructive component 350 comprises choke ring 351 and lift component 355.
Choke ring 351 is positioned at the top of ceramic ring 324 with cover framework ring 71, thus cut-out frame loops 71 is exposed to electricity slurry.Choke ring 351 provides with ceramic material.Choke ring 351 is ring-type, and internal diameter can be greater than or corresponding to the internal diameter of frame loops 71, and external diameter can be less than or corresponding to frame loops 71 external diameter.Choke ring 351 has the width that can be covered to the outer ledge region of frame loops 71 from the inside region of frame loops 71.Choke ring 351 has main body 352, inside portion 353 and outside portion 354.Main body 352 in the form of a ring, is placed in opposite directions with the top of frame loops 71.Main body 352 and frame loops 71 keep predetermined distance.The inner side of inside portion 353 autonomous agent 352 dips down and tiltedly extends, and its end contacts with the inside region of frame loops 71.The lateral of outside portion 354 autonomous agent 352 has a down dip and tiltedly extends, and its end contacts with the outer ledge region of frame loops 71.Choke ring 351 does not cover and is exposed to outside installation band 72.Therefore, the residual joint mixture on installation band 72 surface is removed by electricity slurry, thus prevents the generation of cavity (Void) when non-conducting film lamination (NCF Lamination) operation.
Choke ring 351 cuts off installation band 72 and is exposed to electricity slurry.Choke ring 351 to contact with substrate 51c by medial extremity 353 or adjacent, and outboard end 354 contacts with frame loops 71 or adjacent, thus cuts off electricity slurry inflow installation band 72 side.When installation band 72 is exposed to electricity slurry, installation band 72 is elongated, and the operation of handling object thing 50 goes wrong thus makes installation band 72 sex change.The installation band 72 of sex change is not only not easily removed, and occurs cannot remove completely and then residual a part of problem on substrate 51c.Choke ring 71 cuts off installation band 72 and is exposed to electricity slurry, thus the generation of prevention the problems referred to above.
Lift component 355 makes choke ring 351 be elevated.When handling object thing 50 is positioned over support unit 320 or self-supporting unit 320 elevate a turnable ladder, lift component 355 elevate a turnable ladder choke ring 351.And during handling object thing 50 is positioned over support unit 320, choke ring 351 is fallen downwards to cover installation band 72 by lift component 355.Lift component 355 comprises carriage release lever 361, supporting spring 365 and drive division 368.
Carriage release lever 361 supports choke ring 351, and choke ring 351 is elevated.According to embodiment, carriage release lever 361 provides with three interconnective structures of bar 362 to 364.First bar 362 supports choke ring 351.Second bar 363, at lower support first bar 362 of the first bar 362, forms the space that can be elevated for the first bar 362 in inner side.First bar 362 can vertically move, and it is positioned at the inner side of the second bar 363 and the top of the second bar 363.
3rd bar 364, at lower support second bar 363 of the second bar 363, forms the space that can be elevated for the second bar 363 in inner side.Second bar 363 can vertically move, and it is positioned at the inner side of the 3rd bar 364 and the top of the 3rd bar 364.
Drive division 368 makes carriage release lever 361 be elevated.Specifically, drive division 368 makes the first bar 362 and the second bar 363 individually be elevated.Due to the driving of drive division 368, the second bar 363 is elevated relative to the 3rd bar 364, and the first bar 362 is elevated relative to the second bar 363.
Supporting spring 365 is incorporated into carriage release lever 361, is together elevated with carriage release lever 361.According to embodiment, supporting spring 365 is incorporated into the second bar 363.Supporting spring 365 extends to pedestal 322 direction from the second bar 363, and its end is positioned at holding tank 324a.Together with the movement of the second bar 363, supporting spring 365 is elevated along holding tank 324a.When supporting spring 365 is positioned at the top of holding tank 324a, settle frame loops 71.Under the state that handling object thing 50 is placed in supporting spring 365 in frame loops 71, together decline with the decline of supporting spring 365.In the process that supporting spring 365 declines, handling object thing 50 is positioned over the top of support unit 320.With contrary, when supporting spring 365 moves laterally in holding tank 324a, frame loops 71 is positioned on supporting spring 365.In the process that supporting spring 365 rises, handling object thing 50 self-supporting unit 320 is picked up.
Below to utilizing the method for substrate board treatment treatment substrate to be described.
As shown in Figures 1 to 8, as mentioned above, the substrate 51c completing grinding back surface is attached to installation band 72 fixing in frame loops 71 to form handling object thing 50.
As shown in Fig. 9 and Figure 12, subsequently, handling object thing 50 is provided to operation chamber 310 inside by conveying machine people.In operation chamber 310, the first bar 362 and the second bar 363 are elevated, and supporting spring 365 is standby.With regard to handling object thing 50, frame loops 71 is placed on supporting spring 365.Under the state that handling object thing 50 is supported by supporting spring 365, the second bar 363 declines.In the process that supporting spring 365 and the second bar 363 together decline, handling object thing 50 is placed in support unit 320.Now, handling object thing 50 is placed to the bottom that makes substrate 51c and pedestal 322 in opposite directions, and the bottom of frame loops 71 and guiding device 324b are in opposite directions.Afterwards, the first bar 362 together declines with choke ring 351 with cover framework ring 71, thus installation band 72 is exposed.
Gas supply department 370 is to dielectric tube 343 inside supply process gases.
Electricity slurry generating unit 340 produces electricity slurry from process gases.It is inner that the microwave that oscillator 341 produces is passed to dielectric tube 343 by waveguide 342.Microwave makes the process gases being supplied to dielectric tube 343 inside from gas supply department 370 excite as electric pulpous state state.Electricity slurry flows into diffusion space 314, flows into operation chamber 310 inner via the dispensing orifice 331 of diffusion space 314 and shower nozzle 330.Electricity slurry is supplied to the top of handling object thing 50, limits the contact with frame loops 71 by choke ring 351.Now, be exposed to outside installation band 72 to can't help choke ring 351 and cover.
Electricity slurry removes the cement being attached to substrate 51c top and the residual joint mixture being exposed to outside installation band 72 surface.
The process gases and the byproduct of reaction that are stranded in operation chamber 310 inside flow into steam vent 411 via the hole of exhaustion plate 410, to be expelled to outside.
After operation process completes, the first bar 362 and the second bar 363 rise.Supporting spring 365 and the second bar 363 together rise, meanwhile, and self-supporting unit 320 elevate a turnable ladder handling object thing 50.During handling object thing 50 is supported in supporting spring 365, it is inner that conveying machine people enters operation chamber 310, fixing frame loops 71.Conveying machine people takes out of handling object thing 50 from operation chamber 310.
For another example shown in Fig. 2 to Fig. 8, illustrate in this embodiment after shaping 63 operations, substrate 51b is attached to installation band 72, after removal carrier 54, perform the operation that knitting layer 55a residual on substrate 51c is removed.From different, knitting layer 55a remove can perform before chip join 61.According to embodiment, carrier 54 can be engaged on the substrate 51 that have passed through preceding working procedure (FEOL:Front End Of Line) operation, after execution back grinding procedure, under the state that substrate 51a is attached to installation band 72, remove carrier 54, remove knitting layer 55a residual on substrate 51a.Then, chip join operation, underfill operation and molding procedure is carried out successively.
This embodiment utilizes at process outside generation electricity slurry and produced electricity slurry is supplied to process interior volume and is described the substrate board treatment that handling object thing processes.But be different from this, embodiments of the invention can be provided in the substrate board treatment implementing the generation of electricity slurry and the process of handling object thing in process interior volume.Figure 13 and Figure 14 is the profile of the substrate board treatment respectively illustrating another embodiment of the present invention.As shown in figure 13, embodiments of the invention also can be applicable to utilize the substrate board treatment implementing inductance coupling high type electricity slurry source side formula (ICP) of the generation of electricity slurry and the process of handling object thing in process interior volume.In addition, as shown in figure 14, embodiments of the invention also can be applicable to utilize the substrate board treatment implementing capacitively coupled electricity slurry source side formula (CCP) of the generation of electricity slurry and the process of handling object thing in process interior volume.
More than describe in detail is to illustration of the present invention.In addition, foregoing teachings shows and better example of the present invention is described, the present invention can use under other various combination, change and environment.That is, the scope of the concept of the invention disclosed in this manual, with in the scope of described disclosure equivalence and/or the technology in affiliated field or the scope of knowledge, can be changed or be revised.Described embodiment illustrates the optimum state for embodying the technology of the present invention thought, can carry out the numerous variations of embody rule field of the present invention and purposes necessary requirement.Therefore, above detailed description of the invention be not intended to limit the invention to disclosed example.In addition, appended claims should be interpreted as also comprising other enforcement state.
Claims (12)
1. a substrate board treatment, comprising:
Operation chamber, this operation chamber interior is formed with space;
Support unit, this support unit is positioned at described operation chamber interior to support handling object thing; And
Gas supply department, this gas supply department is to described operation chamber interior supply process gases; And
Described support unit comprises:
Pedestal; And
Ceramic ring, this ceramic ring system is to configure around the mode of described pedestal;
This substrate board treatment also comprises pad, and this pad is used for forming gap between the described handling object thing be positioned in described support unit and described ceramic ring.
2. substrate board treatment as claimed in claim 1, described pad protrudes from described ceramic ring to top.
3. substrate board treatment as claimed in claim 1, described gasket ring is configured with multiple around described pedestal.
4. substrate board treatment as claimed in claim 1, for making described handling object thing be positioned at described pedestal top, the top edge portion being also included in described ceramic ring protrudes the guide portion of configuration.
5. substrate board treatment as claimed in claim 4, described guide portion is configured with multiple, and multiple described guide portion is spaced from each other around described pedestal.
6. substrate board treatment as claimed in claim 1, is formed with embossing at the top of described pedestal.
7. the substrate board treatment described in any one of claim 1 to 6, described handling object thing comprises: frame loops; Be fixed on the installation band of the medial surface of this frame loops; And be attached to the substrate at the top that this installation is with; Further, described substrate board treatment also comprises obstructive component, and this obstructive component is the ring-shaped covering described frame loops, is not exposed to electricity slurry to make described frame loops.
8. substrate board treatment as claimed in claim 7, described obstructive component is configured to make described installation band be exposed to electricity slurry.
9. substrate board treatment as claimed in claim 7, described obstructive component comprises:
Choke ring; And
Make the lift component that described choke ring is elevated.
10. a substrate processing method using same, this substrate processing method using same comprises the following steps:
Be fixed on the installation of frame loops with bringing the substrate adhering to and complete grinding back surface to form the step of handling object thing;
Described handling object thing is made to be positioned at the step of the substrate board treatment according to any one of claim 1 to 6; And
Utilize the step exciting the process gases for electricity slurry to remove the cement residue of described substrate surface.
11. substrate processing method using sames as claimed in claim 10, in the step removing cement residue, described installation band is exposed to described electricity slurry.
12. substrate processing method using sames as claimed in claim 10, in the step removing cement residue, described frame loops is covered by choke ring, and described installation band be can't help described choke ring and covered.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0026626 | 2014-03-06 | ||
| KR1020140026626A KR101594928B1 (en) | 2014-03-06 | 2014-03-06 | Apparatus and method for treating a substrate |
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| CN104900563A true CN104900563A (en) | 2015-09-09 |
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| CN201410710979.1A Pending CN104900563A (en) | 2014-03-06 | 2014-11-28 | Substrate processing device and method |
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| Country | Link |
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| KR (1) | KR101594928B1 (en) |
| CN (1) | CN104900563A (en) |
| TW (1) | TWI555076B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106935530A (en) * | 2015-12-31 | 2017-07-07 | 中微半导体设备(上海)有限公司 | A kind of plasma etching photoetching adhesive dispenser |
| CN113580557A (en) * | 2021-07-28 | 2021-11-02 | 沛顿科技（深圳）有限公司 | 3D printing method for replacing NCF in TSV process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108352297B (en) | 2015-12-07 | 2023-04-28 | 应用材料公司 | Combined cover ring |
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| CN101047143A (en) * | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
| CN101276777A (en) * | 2007-03-27 | 2008-10-01 | 东京毅力科创株式会社 | Substrate mounting stage and substrate processing apparatus |
| US20130295775A1 (en) * | 2007-10-12 | 2013-11-07 | Panasonic Corporation | Plasma processing apparatus |
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| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| JP5291392B2 (en) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | Support plate peeling device |
| JP5993568B2 (en) * | 2011-11-09 | 2016-09-14 | 東京エレクトロン株式会社 | Substrate mounting system, substrate processing apparatus, electrostatic chuck, and substrate cooling method |
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2014
- 2014-03-06 KR KR1020140026626A patent/KR101594928B1/en active IP Right Grant
- 2014-11-21 TW TW103140558A patent/TWI555076B/en active
- 2014-11-28 CN CN201410710979.1A patent/CN104900563A/en active Pending
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| US20010047762A1 (en) * | 1997-05-20 | 2001-12-06 | Kazuichi Hayashi | Processing apparatus |
| CN101047143A (en) * | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
| CN101276777A (en) * | 2007-03-27 | 2008-10-01 | 东京毅力科创株式会社 | Substrate mounting stage and substrate processing apparatus |
| US20130295775A1 (en) * | 2007-10-12 | 2013-11-07 | Panasonic Corporation | Plasma processing apparatus |
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| CN106935530A (en) * | 2015-12-31 | 2017-07-07 | 中微半导体设备(上海)有限公司 | A kind of plasma etching photoetching adhesive dispenser |
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| CN113580557A (en) * | 2021-07-28 | 2021-11-02 | 沛顿科技（深圳）有限公司 | 3D printing method for replacing NCF in TSV process |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101594928B1 (en) | 2016-02-17 |
| KR20150104813A (en) | 2015-09-16 |
| TWI555076B (en) | 2016-10-21 |
| TW201535498A (en) | 2015-09-16 |
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