CN104898370A - Post-processing method and use method of mask having defect pattern - Google Patents
Post-processing method and use method of mask having defect pattern Download PDFInfo
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- CN104898370A CN104898370A CN201410083024.8A CN201410083024A CN104898370A CN 104898370 A CN104898370 A CN 104898370A CN 201410083024 A CN201410083024 A CN 201410083024A CN 104898370 A CN104898370 A CN 104898370A
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- pattern
- mask plate
- defect
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a post-processing method of a mask having a defect pattern; a shadow is formed in quartz glass at a position having a defect pattern by a laser so as to reduce the light transmittance of the position having the defect pattern, in the process of using the mask having the defect pattern for exposure, the defect pattern is avoided from being formed on a wafer, a risk of defect generation of the wafer after a photolithography technology is reduced, and a mask having the defect is reused, so as to avoid the problems of high manufacturing costs brought by repairing the mask having the defect or re-manufacturing a mask, namely reduce the manufacturing costs; and at the same time, the production yield is improved.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of post-processing approach and using method with the mask plate of defect pattern.
Background technology
Along with the development of semiconductor fabrication process, the area of semi-conductor chip is more and more less, and therefore the precision of semiconductor technology also becomes more important.In semiconductor fabrication process, one of them important technique is exactly photoetching, and photoetching is the technological process of the photoengraving pattern on wafer by the design transfer on mask plate, and the quality of therefore photoetching directly can have influence on the performance of the final chip formed.
Common, mask plate includes multiple patterns, mainly comprises: for the formation of the device pattern (device pattern) of function element, the test pattern (yield test pattern) detected for yield and for the lines being less than design rule of photoetching process window inspection or island pattern (sub-rule pattern).In pattern on above-mentioned mask plate, the problem of (peel off) very easily peeled off by the lines or the island pattern that are less than design rule, and meanwhile, along with the area of semi-conductor chip is more and more less, this problem also becomes more and more outstanding.Be less than the lines of design rule or this problem of island pattern, will the defect of photoetching process be caused, reduce the reliability of photoetching process; In addition, be less than the lines of design rule or the stripping problem of island pattern, also easily cause the problem that device pattern and test pattern are peeling, thus cause the defect of photoetching process further, reduce the reliability of photoetching process.
In the face of this problem, the disposal route in existing technique is mainly:
1, still use defective mask plate (namely having the mask plate of lines or the island pattern stripping problem being less than design rule) to carry out photoetching process, thus will the wafer after photoetching process be caused very easily defect to occur, reduce and produce yield;
2, remove the lines being less than design rule or the island pattern of defectiveness (being mainly stripping problem) or again make mask plate, use one is repaired or new mask plate carries out photoetching process, will produce huge manufacturing cost thus.
Therefore, provide a kind of photoetching method, it can either prevent from producing the reduction of yield, can avoiding again the increase of manufacturing cost, has become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The object of the present invention is to provide a kind of post-processing approach and the using method with the mask plate of defect pattern, to solve in prior art when in the face of mask defects, producing causing the problem that yield is low or manufacturing cost is high.
For solving the problems of the technologies described above, the invention provides a kind of post-processing approach with the mask plate of defect pattern, described in there is the mask plate of defect pattern post-processing approach comprise:
There is provided a mask plate, described mask plate comprises multiple pattern, and one or more pattern has defect;
In the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with the quartz glass at defect pattern place by laser.
Optionally, have in the post-processing approach of the mask plate of defect pattern described, after laser treatment, the transmittance of the quartz glass at the defective pattern place of described tool is less than 50%.
Optionally, have in the post-processing approach of the mask plate of defect pattern described, the defective pattern of described tool is the lines or the island pattern that are less than design rule.
Optionally, have in the post-processing approach of the mask plate of defect pattern described, utilize pulsed laser to produce pulse laser, utilize pulse laser to form shade in the quartz glass at the defective pattern place of tool.
Optionally, have in the post-processing approach of the mask plate of defect pattern described, utilize pulse laser in the quartz glass at the defective pattern place of tool, to form the used time of shade for 1ms ~ 1000s.
The present invention also provides a kind of using method with the mask plate of defect pattern, described in there is the mask plate of defect pattern using method comprise:
There is provided a mask plate, described mask plate comprises multiple pattern, and one or more pattern has defect;
In the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with the quartz glass at defect pattern place by laser;
Mask plate after laser treatment is placed in litho machine, to make described mask plate after laser treatment for photoetching process.
Optionally, have in the using method of the mask plate of defect pattern described, the defective pattern of described tool will not shift.
Optionally, have in the using method of the mask plate of defect pattern described, after laser treatment, the transmittance of the quartz glass at the defective pattern place of described tool is less than 50%.
Optionally, have in the using method of the mask plate of defect pattern described, the defective pattern of described tool is the lines or the island pattern that are less than design rule.
Optionally, have in the using method of the mask plate of defect pattern described, utilize pulsed laser to produce pulse laser, utilize pulse laser to form shade in the quartz glass at the defective pattern place of tool.
In the post-processing approach that there is the mask plate of defect pattern provided by the invention and using method, in the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with defect pattern place by laser, thus utilizing the mask plate with defect pattern to carry out in the process exposed, avoid the formation of defect pattern on wafer, reduce the risk of the wafer generation defect after photoetching process, recycle the defective mask plate of tool thus, avoid the problem of repairing the defective mask plate of tool or again making the high manufacturing cost that mask plate brings, namely manufacturing cost is reduced, meanwhile, production yield is turn improved.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet with the post-processing approach of the mask plate of defect pattern of the embodiment of the present invention;
Fig. 2 is the schematic flow sheet with the using method of the mask plate of defect pattern of the embodiment of the present invention;
Fig. 3 is the view of mask plate in the embodiment of the present invention and wafer;
Fig. 4 is the structural representation of the laser pulse system used in the embodiment of the present invention.
Embodiment
The post-processing approach with the mask plate of defect pattern proposed the present invention below in conjunction with the drawings and specific embodiments and using method are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, in the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with defect pattern place by laser, thus utilizing the mask plate with defect pattern to carry out in the process exposed, avoid the formation of defect pattern on wafer, reduce the risk of the wafer generation defect after photoetching process, recycle the defective mask plate of tool thus, avoid the problem of repairing the defective mask plate of tool or again making the high manufacturing cost that mask plate brings, namely reduce manufacturing cost; Meanwhile, production yield is turn improved.
Concrete, please refer to Fig. 1, it is the schematic flow sheet with the post-processing approach of the mask plate of defect pattern of the embodiment of the present invention.As shown in Figure 1, the post-processing approach described in the mask plate of defect pattern comprises:
Step S10 a: mask plate is provided, described mask plate comprises multiple pattern, and one or more pattern has defect;
Step S11: form shade to reduce the transmittance with the quartz glass at defect pattern place in the quartz glass at the defective pattern place of tool by laser.
Accordingly, the embodiment of the present invention additionally provides a kind of using method with the mask plate of defect pattern, concrete, please refer to Fig. 2, and it is the schematic flow sheet with the using method of the mask plate of defect pattern of the embodiment of the present invention.As shown in Figure 2, the using method described in the mask plate of defect pattern comprises:
Step S10 a: mask plate is provided, described mask plate comprises multiple pattern, and one or more pattern has defect;
Step S11: form shade to reduce the transmittance with the quartz glass at defect pattern place in the quartz glass at the defective pattern place of tool by laser;
Step S12: the mask plate after laser treatment is placed in litho machine, to make described mask plate after laser treatment for photoetching process.
In the embodiment of the present application, described in have in the using method of the mask plate of defect pattern, first need the mask plate to having defect pattern to process, and then utilize process after the mask plate with defect pattern carry out photoetching process.
Further, please refer to Fig. 3, it is the view of mask plate in the embodiment of the present invention and wafer.As shown in Figure 3, described mask plate 20 comprises multiple pattern, schematically shows 4 reticle pattern at this, and wherein, pattern 200 is the defective pattern of tool, and such as pattern 200 there occurs stripping problem; Pattern 201, for meeting the pattern of lithography requirements, is called not have defective pattern accordingly.In the embodiment of the present application, the defective pattern 200 of described tool for being less than lines or the island pattern of design rule, described in do not have defective pattern 201 can one or more for being less than in the lines of design rule or island pattern, device pattern, test pattern etc.In other embodiments of the application, the defective pattern 200 of described tool also can be the pattern of other kinds.
In the embodiment of the present application, after laser treatment, shade 22 will be formed in the quartz glass at tool defective pattern 200 place, thus reduce the transmittance of the quartz glass with defect pattern place.Concrete, utilize pulsed laser to produce pulse laser, utilize pulse laser to form shade in the quartz glass at tool defective pattern 200 place.Concrete, please refer to Fig. 4, its structural representation of laser pulse system for using in the embodiment of the present invention.Accurately, reliably shade can be formed in the quartz glass at tool defective pattern 200 place by described laser pulse system.
As shown in Figure 4, described laser pulse system comprises pulsed laser 31, optical beam redirector 32 and condenser 33, wherein, described pulsed laser 31 is in order to produce pulse laser, the pulse laser special project that described optical beam redirector 32 produces in order to make pulsed laser 31, described condenser 33 is assembled in order to make the pulse laser through optical beam redirector 32.At this, produce pulse laser by pulsed laser 31 and can realize repeatedly casting a shadow on the defective pattern of tool, thus reduce control/technological requirement; And by the pulse laser that described optical beam redirector 32 and condenser 33 can make described pulsed laser 31 produce, there is greater flexibility, the direction that namely can change the pulse laser that pulsed laser 31 produces and the laser that pulsed laser 31 can be made to produce more are assembled, thus realize the transmittance casting a shadow to reduce the defective pattern of tool on the defective pattern of tool better, improve and produce yield.
In the embodiment of the present application, the defective pattern 200 of described tool is for being less than lines or the island pattern of design rule.After laser treatment, the transmittance of the quartz glass at the defective pattern place of described tool is less than 50%.Preferably, pulse laser is utilized in the quartz glass at the defective pattern place of tool, to form the used time of shade for 1ms ~ 1000s.Thus, shade can either be formed in the quartz glass at tool defective pattern 200 place, reduce the transmittance of the quartz glass with defect pattern 200 place; Production efficiency can be ensured again.
In the embodiment of the present application, after the mask plate 20 with defect pattern is processed, the mask plate 20 described in normal use with defect pattern will be continued.That is, the mask plate 20 after laser treatment is placed in litho machine, to make described mask plate after laser treatment for photoetching process.
Please continue to refer to Fig. 3, by carrying out illumination to mask plate 20, can, by the design transfer on mask plate 20 on wafer 21, make wafer 21 defines photoengraving pattern 210.At this, wafer 21 only defines three photoengraving patterns 210, the pattern 201 on the corresponding mask plate 20 of these three photoengraving patterns 210, namely these three photoengraving patterns 210 are obtained by the pattern 201 photoetching transfer on mask plate 20.And the defective pattern 200 of tool on mask plate 20, due to the effect of shade 22, photoetching transfer will not be there is, thus avoid its defect is taken on wafer 21, thus reduce the risk that defect occurs the wafer after photoetching process 21, improve production yield.
As fully visible, in the post-processing approach with the mask plate of defect pattern provided in the embodiment of the present application and using method, in the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with defect pattern place by laser, thus utilizing the mask plate with defect pattern to carry out in the process exposed, avoid the formation of defect pattern on wafer, reduce the risk of the wafer generation defect after photoetching process, recycle the defective mask plate of tool thus, avoid the problem of repairing the defective mask plate of tool or again making the high manufacturing cost that mask plate brings, namely manufacturing cost is reduced, meanwhile, production yield is turn improved.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (10)
1. there is a post-processing approach for the mask plate of defect pattern, it is characterized in that, comprising:
There is provided a mask plate, described mask plate comprises multiple pattern, and one or more pattern has defect;
In the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with the quartz glass at defect pattern place by laser.
2. have the post-processing approach of the mask plate of defect pattern as claimed in claim 1, it is characterized in that, after laser treatment, the transmittance of the quartz glass at the defective pattern place of described tool is less than 50%.
3. have the post-processing approach of the mask plate of defect pattern as claimed in claim 1, it is characterized in that, the defective pattern of described tool is the lines or the island pattern that are less than design rule.
4. there is the post-processing approach of the mask plate of defect pattern as claimed in claim 1, it is characterized in that, utilize pulsed laser to produce pulse laser, utilize pulse laser to form shade in the quartz glass at the defective pattern place of tool.
5. there is the post-processing approach of the mask plate of defect pattern as claimed in claim 4, it is characterized in that, utilize pulse laser in the quartz glass at the defective pattern place of tool, to form the used time of shade for 1ms ~ 1000s.
6. there is a using method for the mask plate of defect pattern, it is characterized in that, comprising:
There is provided a mask plate, described mask plate comprises multiple pattern, and one or more pattern has defect;
In the quartz glass at the defective pattern place of tool, shade is formed to reduce the transmittance with the quartz glass at defect pattern place by laser;
Mask plate after laser treatment is placed in litho machine, to make described mask plate after laser treatment for photoetching process.
7. have the using method of the mask plate of defect pattern as claimed in claim 6, it is characterized in that, the defective pattern of described tool will not shift.
8. have the using method of the mask plate of defect pattern as claimed in claim 6, it is characterized in that, after laser treatment, the transmittance of the quartz glass at the defective pattern place of described tool is less than 50%.
9. have the using method of the mask plate of defect pattern as claimed in claim 6, it is characterized in that, the defective pattern of described tool is the lines or the island pattern that are less than design rule.
10. there is the using method of the mask plate of defect pattern as claimed in claim 6, it is characterized in that, utilize pulsed laser to produce pulse laser, utilize pulse laser to form shade in the quartz glass at the defective pattern place of tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410083024.8A CN104898370A (en) | 2014-03-07 | 2014-03-07 | Post-processing method and use method of mask having defect pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410083024.8A CN104898370A (en) | 2014-03-07 | 2014-03-07 | Post-processing method and use method of mask having defect pattern |
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| Publication Number | Publication Date |
|---|---|
| CN104898370A true CN104898370A (en) | 2015-09-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410083024.8A Pending CN104898370A (en) | 2014-03-07 | 2014-03-07 | Post-processing method and use method of mask having defect pattern |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1770008A (en) * | 2004-11-03 | 2006-05-10 | 国际商业机器公司 | Method and apparatus for correction of defects in lithography masks |
| CN102338942A (en) * | 2010-07-21 | 2012-02-01 | 财团法人工业技术研究院 | Method and system for repairing flat panel display |
| CN102540749A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| US20130078746A1 (en) * | 2011-09-24 | 2013-03-28 | Globalfoundries Inc. | Reticle defect correction by second exposure |
| CN103586578A (en) * | 2013-11-14 | 2014-02-19 | 苏州图森激光有限公司 | Method for darkening or coloring surface of material |
-
2014
- 2014-03-07 CN CN201410083024.8A patent/CN104898370A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1770008A (en) * | 2004-11-03 | 2006-05-10 | 国际商业机器公司 | Method and apparatus for correction of defects in lithography masks |
| CN102338942A (en) * | 2010-07-21 | 2012-02-01 | 财团法人工业技术研究院 | Method and system for repairing flat panel display |
| CN102540749A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| US20130078746A1 (en) * | 2011-09-24 | 2013-03-28 | Globalfoundries Inc. | Reticle defect correction by second exposure |
| CN103586578A (en) * | 2013-11-14 | 2014-02-19 | 苏州图森激光有限公司 | Method for darkening or coloring surface of material |
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Application publication date: 20150909 |
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