CN104898153B - A kind of infant industry and medical image Photoelectric Detection board device - Google Patents

A kind of infant industry and medical image Photoelectric Detection board device Download PDF

Info

Publication number
CN104898153B
CN104898153B CN201510349746.8A CN201510349746A CN104898153B CN 104898153 B CN104898153 B CN 104898153B CN 201510349746 A CN201510349746 A CN 201510349746A CN 104898153 B CN104898153 B CN 104898153B
Authority
CN
China
Prior art keywords
photoelectric detection
detection area
parallel data
board device
medical image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201510349746.8A
Other languages
Chinese (zh)
Other versions
CN104898153A (en
Inventor
尚志红
刘云
郑善锋
廖小雄
廖逸
罗敏
潘敏
廖延皓
廖旻昊
廖小东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201510349746.8A priority Critical patent/CN104898153B/en
Publication of CN104898153A publication Critical patent/CN104898153A/en
Application granted granted Critical
Publication of CN104898153B publication Critical patent/CN104898153B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Apparatus For Radiation Diagnosis (AREA)
  • Measurement Of Radiation (AREA)

Abstract

The present invention provides the novel photoelectrics under a kind of industry and medicine perspective digital picture development occasion to detect board device.The device is produced on a kind of flexible thin-film material, including Photoelectric Detection area and parallel data treatment region.The Photoelectric Detection area be made of charge storage array, surface coating photosensitive coating, the pinpoint structure of geometry;The parallel data treatment region is a kind of microprocessor control, carries out the parallel organization that the amplification of light quantum charge integration, analog-to-digital conversion and image information data exchange;The Photoelectric Detection area is the structure that multiple can be overlapped into tablet or curved surface present situation.

Description

A kind of infant industry and medical image Photoelectric Detection board device
Technical field
The present invention relates to the electronic information technical fields that the industries such as industry, medicine, security protection have an X-rayed chromatography image light electro-detection. More particularly to a kind of industry and medical image Photoelectric Detection board device.
Background technology
In digitized image developing system, the abundant degree of volume, processing speed and acquisition of information, x-ray are considered Energy is converted into what electric signal was realized mostly by flat-panel detector, the computer in tablet image detector technologies and system Image processing techniques forms the core technology of digital picture development treatment.So the characteristic of flat-panel detector is to digital picture quality It has a huge impact.Often wish to use the X-ray detector for making every effort to large scale as far as possible and high resolution in practical application, with The complete X-ray absorption image of big area of detection, high quality is obtained, for example, in X ray systems around the primary rotation of patient The middle entire organ of scanning, obtains the thoracic cavity of such as patient, the entire perspective information of heart.But since flat-panel detector technology is related to The many technical fields of nuclear physics, Semiconductor Physics, material science, core manufacturing technology is more complicated, and application cost is also very high, especially It is in, the flat-panel detector product of big size.
Patent of the present invention proposes a kind of digital picture flat-panel detector device based on flexible circuit manufacturing technology, in low life Under the premise of producing cost, flexibly processing picture signal, with the semi conductive high density large scale integrated chip of existing maturation Finished product technology, design are combined into the opto-electronic conversion detector of large-size, and are kept close to non-crystalline silicon visual detector The level of spatial resolution and detective quantum efficiency.
Invention content
The technical problems to be solved by the invention are to provide low in a kind of industry and medical image number development treatment Production cost, image sensing signal are flexibly handled, spatial resolution and detective quantum efficiency it is moderate image tablet detection Device device.
The technical problems to be solved by the invention are realized using following technical scheme:A kind of infant industry and medical image Photoelectric Detection board device, for the X ray such as industry, medicine, security protection number development occasion, including multiple photodetector unit groups L-shaped strip-shaped flexible thin film circuit, multiple L-type strip-shaped flexible thin film circuits are overlapped by plane or are formed by stacking complete inspection by curved surface Survey device device.The photodetector unit is divided into Photoelectric Detection area and parallel data treatment region Liang Ge areas, by a 5X5 totally 25 A charge storage array, one large-scale field effect transistor switch control chip, a public charge integrating circuit and a list First microprocessor parallel processing chip is formed.
The charge storage array is made of the charge accumulator that the five-element five arrange, and preferable application example is the water of memory Flat 1000 μm ~ 2000 μm of spacing, vertical interval are 1000 μm ~ 1500 μm, rectangle or circle, and surface coating visible ray all can measure sense Optical coating, be such as applied to X-ray digital image it is photosensitive when, in memory geometric center alignment flash layer cesium iodide grid filling hole The heart.For this purpose, the colour developing column in its corresponding X-ray scintillation body layer or luminescent coating need to be designed to corresponding geometric position distribution.
The large-scale field effect transistor switch control chip needs connecing for the analog channel of energy single control 25 or more Ground and sample of signal, package dimension are less than below 8X8cm.Higher accurate dimension positioning is such as obtained, need to be mounted using bare die.
The light quantum got on memory is converted into electric signal, picture signal and local by the charge integrating circuit The signal-to-noise ratio of noise is higher than 12 bits.One more excellent example is the TLV2252 dual operational amplifier chips using micropackaging Construct integrating circuit.
The unit microprocessor parallel processing chip is by 16 risc microcontroller chips of micropackaging and built-in High-speed a/d conversion circuit is formed.Several more excellent examples be using MSP430F2013 TSSOP14 patches encapsulation or The UFQFPN20 patches encapsulation of STM8L151F3U6.When obtaining 300 μm X300 μm or more of spatial resolution, it need to use naked Piece mounts.
The L-type strip-shaped flexible thin film circuit is made of 10 ~ 15 photodetector units, Liang Ge areas is formed altogether, first, light Electro-detection area, first, realtime graphic parallel processing area;Photoelectric Detection 5 ~ 7mm of sector width, realtime graphic parallel processing sector width are The former 2 ~ 3 times.Band-like tablet visual detector can be made in single L-type strip-shaped flexible thin film circuit, in scan-type picture number It is applied in word toning system, such as bone digital angiography, the image detection of X-ray machine security protection instrument;Multiple L-type strip-shaped flexible thin-film electros Road can be overlapped into flat or curved face type visual detector, be applied in local radiography and CT tomographic map opto-electronic conversions.
Description of the drawings
Fig. 1 is single photodetector unit electrical block diagram in apparatus of the present invention.Fig. 2 is L-type in apparatus of the present invention Strip-shaped flexible thin film circuit cross section structure schematic diagram.Fig. 3 is that L-type flexible thin film circuit has been overlapped by plane in apparatus of the present invention Whole detector structure diagram.Fig. 4 is that L-type flexible thin film circuit is overlapped into complete detector structure by curved surface in apparatus of the present invention Schematic diagram.
Specific embodiment
In order to make the technical means, creative features, achievement of purpose and effectiveness of the invention easy to understand, with reference to tool Body illustrates, and the present invention is furture elucidated.
As shown in Figure 1, a kind of infant industry and medical image Photoelectric Detection board device, for industry, medicine, security protection Etc. industries perspective tomographic map Photoelectric Detection, including multiple photodetector unit circuits form L-type strip-shaped flexible thin film circuit, Multiple L-type flexible thin film circuits are overlapped by plane or curved surface is formed by stacking complete detector device.The photodetector unit For circuit production on fexible film, 100 μm ~ 200 μm of flexible thin film thickness is divided into Photoelectric Detection area(1)With parallel data treatment region (2)Liang Ge areas, Photoelectric Detection area(1)By a 5X5 totally 25 charge memory arrays(3)Composition;Parallel data treatment region(2) By one large-scale field effect transistor switch control chip(4), a public charge integrating circuit(5)With a unit microprocessor Device parallel processing chip(6)It forms;The Photoelectric Detection area(1)The upper charge accumulator for being laid with the five-element five and arranging(3), one compared with Good application example is 1000 μm ~ 2000 μm of the level interval of memory, and vertical interval is 1000 μm ~ 1500 μm, charge accumulator Rectangular or round, equal surface coating visible ray all can measure photosensitive coating, and each memory geometric center is directed at flash layer iodate Caesium grid fills hole center.As shown in Fig. 3 institutes, whole Photoelectric Detection areas(1)、(7)It is overlapped into complete photoelectricity tablet It is contacted with X-ray scintillation layer.The parallel data treatment region(2)In large-scale field effect transistor switch control chip(4) Energy single controls ground connection and the sample of signal of the analog channel of 25 or more;Sample microprocessor parallel processing chip(6)Control Charge accumulator(3)With public charge integrating circuit(5)Connection and integrated signal high-speed a/d conversion, conversion end is laggard Row data communications exchange.Whole parallel data treatment regions(2)、(8)In microprocessor chip carry out concurrent working.Such as Fig. 4 Shown, described Photoelectric Detection area(1)、(7)Also curved surface can be overlapped by required.
The basic principles, main features and the advantages of the invention have been shown and described above.The technology of the industry For personnel it should be appreciated that the present invention is not limited by above-mentioned implementation, described in the above embodiment and specification is to illustrate this The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its Equivalent thereof.

Claims (3)

1. a kind of industry and medical image Photoelectric Detection board device, which is characterized in that this device is to be produced on a kind of flexibility On thin-film material, the image Photoelectric Detection slab construction including Photoelectric Detection area and parallel data treatment region Liang Ge areas;
The Photoelectric Detection area by one 5 × 5 totally 25 charge memory arrays form;
The parallel data treatment region is by one large-scale field effect transistor switch control chip, a public charge integrating circuit It is formed with a microprocessor parallel data processing chip;
The large size field effect transistor switch control chip energy single controls ground connection and the signal of the analog channel of 25 or more Sampling;Microprocessor parallel data processing chip controls each charge memory array company with public charge integrating circuit respectively It connects and the high-speed a/d of integrated signal is converted, data communications exchange is carried out after conversion end.
2. a kind of industry according to claim 1 and medical image Photoelectric Detection board device, which is characterized in that described Photoelectric Detection area is surface coating photosensitive coating and the pinpoint structure of geometry.
3. a kind of industry according to claim 1 and medical image Photoelectric Detection board device, which is characterized in that described Photoelectric Detection area is the structure that multiple can be overlapped into tablet or curve form.
CN201510349746.8A 2015-06-24 2015-06-24 A kind of infant industry and medical image Photoelectric Detection board device Expired - Fee Related CN104898153B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510349746.8A CN104898153B (en) 2015-06-24 2015-06-24 A kind of infant industry and medical image Photoelectric Detection board device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510349746.8A CN104898153B (en) 2015-06-24 2015-06-24 A kind of infant industry and medical image Photoelectric Detection board device

Publications (2)

Publication Number Publication Date
CN104898153A CN104898153A (en) 2015-09-09
CN104898153B true CN104898153B (en) 2018-06-19

Family

ID=54030913

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510349746.8A Expired - Fee Related CN104898153B (en) 2015-06-24 2015-06-24 A kind of infant industry and medical image Photoelectric Detection board device

Country Status (1)

Country Link
CN (1) CN104898153B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881171A (en) * 1986-07-09 1989-11-14 U.S. Philips Corp. Scintillation camera having simplified electronic control
CN102346260A (en) * 2011-06-08 2012-02-08 上海奕瑞光电子科技有限公司 X-ray flat panel detector with temperature sensing function and preparation method thereof
CN203981890U (en) * 2014-07-04 2014-12-03 上海奕瑞光电子科技有限公司 A kind of X ray flat-panel detector structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0868863A (en) * 1994-08-29 1996-03-12 Shimadzu Corp Radiation detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881171A (en) * 1986-07-09 1989-11-14 U.S. Philips Corp. Scintillation camera having simplified electronic control
CN102346260A (en) * 2011-06-08 2012-02-08 上海奕瑞光电子科技有限公司 X-ray flat panel detector with temperature sensing function and preparation method thereof
CN203981890U (en) * 2014-07-04 2014-12-03 上海奕瑞光电子科技有限公司 A kind of X ray flat-panel detector structure

Also Published As

Publication number Publication date
CN104898153A (en) 2015-09-09

Similar Documents

Publication Publication Date Title
US8063380B2 (en) Semiconductor crystal high resolution imager
US7166848B2 (en) Three dimensional radiation detector
Vandenbroucke et al. Performance characterization of a new high resolution PET scintillation detector
US10288748B2 (en) Double-sided organic photodetector on flexible substrate
US7498583B2 (en) Radiation imaging apparatus
US7615757B2 (en) Semiconductor radiological detector and semiconductor radiological imaging apparatus
WO2013012809A1 (en) Radiation detector modules based on multi-layer cross strip semiconductor detectors
US20150001403A1 (en) Methods and systems for signal communication in gamma ray detectors
EP3465278A1 (en) Direct photon conversion detector
US10353083B2 (en) Monolithic digital x-ray detector stack with energy resolution
CN106483548B (en) A kind of photon counting detector array and its imaging method
CN111837057A (en) High resolution depth-coded PET detector with prismatic light guide array
JP2018508763A (en) Composite scintillation crystal, composite scintillation detector and radiation detector
US20110042575A1 (en) Semiconductor Detector Block and Positron Emission Tomography Device Using the Same
JP3976259B2 (en) Positron emission tomography equipment
CN102090898A (en) Digital image detecting device for measuring detection and verification of point dosage rapidly in real time
CN104898153B (en) A kind of infant industry and medical image Photoelectric Detection board device
Vavrik et al. Modular pixelated detector system with the spectroscopic capability and fast parallel read-out
CN115153601A (en) Three-dimensional position sensitive detector and PET imaging system
CN106324649B (en) semiconductor detector
JP2009074817A (en) Semiconductor detector module, and radiation detection device or nuclear medicine diagnosis device using the semiconductor detector module
CN104849744B (en) A kind of infant industry and medical image photoelectric detection system
CN113189640A (en) Detector for fast neutron imaging and correction method thereof
CN206074817U (en) Semiconductor detector
KR102316574B1 (en) A Compton Imager and a Single Photon Emission and Positron Emission Tomography System including the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180619

Termination date: 20190624

CF01 Termination of patent right due to non-payment of annual fee