CN206074817U - Semiconductor detector - Google Patents
Semiconductor detector Download PDFInfo
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- CN206074817U CN206074817U CN201621032761.6U CN201621032761U CN206074817U CN 206074817 U CN206074817 U CN 206074817U CN 201621032761 U CN201621032761 U CN 201621032761U CN 206074817 U CN206074817 U CN 206074817U
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Abstract
Disclose a kind of semiconductor detector.According to embodiment, the semiconductor detector can include：Semiconductor probe material, including first side relative to each other and second side, wherein, one of first side and second side are the ray planes of incidence for receiving incident ray；The multiple pixel negative electrodes being arranged in first side；The multiple pixel anodes being arranged in second side, wherein, pixel anode is corresponded each other with pixel negative electrode；And it is arranged at the blocking electrode of each pixel negative electrode or pixel anode periphery on the ray plane of incidence.In accordance with an embodiment of the present disclosure, the electric charge that can be prevented effectively between pixel is shared, and improves the imaging resolution of detector.
Description
Technical field
It relates to the semiconductor detector in radiation detection, and in particular to the ray of detector in radiation detection imaging
Electrode design in incident direction.
Background technology
Semiconductor detector is widely paid close attention to its higher detection efficient, preferable energy resolution, is employed
To in the items application of radiation detection, such as nuclide identification instrument, metering alarm in environmental radiation detection etc.；In national security
Articles detecting such as object machine, industrial computed tomography (CT)；CT, dental imaging in medical applications, positron emission
Tomoscan (Positron Emssion Tomography, PET), single photon emission tomoscan (Single Photon
Computer Tomography, SPECT) etc..The species of semi-conducting material is a lot, such as CdMnTe (tellurium manganese cadmium), HgI2(iodine
Change hydrargyrum), TlBr (thallium bromide), PbI2 (lead iodide), GaAs (GaAs), Ge (germanium) etc., the characteristics of they have different respectively,
It is applied to different fields.
, in addition to good energy resolution, high detection efficient, it can also be for CdZnTe (cadmium-zinc-teiluride writes a Chinese character in simplified form CZT)
Work under room temperature, this makes it most potential radiation detection material.Using CZT quasiconductors, the spy of dot structure is designed to
Device is surveyed, the multiple fields in radiant image, such as dentistry CT, SPECT etc. can be applied.
Dot structure not only can obtain good energy resolution, can also obtain relatively high spatial resolution,
The aspects such as astronomical imaging, medical imaging have a extensive future.
Pixel electrode (pixel negative electrode or pixel anode) is a kind of unipolar charge sensitive technologies, its charge inducing only by
A kind of drift of carrier is contributed.Different from the uniform electric field of planar detector, the Electric Field Distribution inside pixel detector is
It is heterogeneous.When the free charge for producing drifts about in the region away from pixel electrode, as the free charge is by multiple pixels
Electrode is shared, therefore the charge inducing on single pixel electrode is very little.Only when free charge is floated near pixel electrode
During shifting, the charge inducing on respective pixel electrode just can change rapidly.Charge inducing almost all on single pixel electrode by
Electric charge is contributed in the drift of pixel electrode near zone.For the CZT detector using pixel anode, hole drifts about to pixel
Electric charge can be almost ignored in the contribution of anode charge inducing, it is achieved thereby that unipolar charge sensitive technologies, improve power spectrum point
Resolution.
But, free charge can be spread during drift, and Partial charge electricity can occur collected by adjacent pixel
Lotus assignment problem.As the reduction of Pixel Dimensions, charge distributing are more serious, the energy spectral resolution of single pixel is caused to be deteriorated.Example
Such as, when the incident position of photon is in the centre of two neighbors, then can be by the two phases by electric charge caused by incident photon
Adjacent pixel collection, the signal of two pixels are rub-out signal；When the incident position of photon is in the middle of 4 neighbors, that
Can be by this 4 adjacent pixel collections by electric charge caused by incident photon.In practical situation, the position of incident photon is not true
Fixed, secondly, the semaphore of each pixel contribution is also uncertain, therefore the accurate location of ray is very doubt.
Meet to share electric charge by signal and be modified, the workload in circuit design is very huge, signal
The efficiency of amendment also will not be very high.Data processing is carried out again by data acquisition, it is impossible to enough realize the Real-time Collection of signal and divide
Analysis.
Utility model content
In view of the above problems, the purpose of the disclosure at least in part be provide one kind in ray incident direction have change
Enter the semiconductor detector of electrode structure.
According to an aspect of this disclosure, there is provided a kind of semiconductor detector, including：Semiconductor probe material, including
First side relative to each other and second side, wherein, one of first side and second side are the rays for receiving incident ray
The plane of incidence；The multiple pixel negative electrodes being arranged in first side；The multiple pixel anodes being arranged in second side, wherein, as
Plain anode is corresponded each other with pixel negative electrode；And it is arranged at each pixel negative electrode on the ray plane of incidence or pixel anode periphery
Blocking electrode.
For example, the ray plane of incidence can be first side.In this case, blocking electrode can be arranged at each pixel negative electrode
Periphery and in alignment with the gap between respective pixel anode.Alternatively, the ray plane of incidence can be second side.Such case
Under, blocking electrode can be arranged at each pixel anode periphery and in alignment with the gap between respective pixel negative electrode.
Ray can be various suitable rays, for example, penetrate including X-ray, gamma ray, isotope ray and Alpha
At least one of line.
Pixel anode or pixel negative electrode can be various suitable shapes, such as square, rectangle, circle or rhombus.
The pixel that blocking electrode can be limited on the space of square, rectangle, circle or rhombus, and the ray plane of incidence is cloudy
Pole or pixel anode can be in corresponding spaces.
Semiconductor probe material can be various suitable X-ray detection X materials, for example including CdZnTe, Ge, CdTe,
HgI2、PbI2, TiBr or GaAs.
Pixel anode and pixel negative electrode can be various suitable electrode materials respectively, such as including gold, platinum, nickel, titanium, indium
At least one of.
Blocking electrode can include high atomic number metal material such as at least one of lead, ferrum, tungsten, copper, gold, platinum, indium.
According to pixel negative electrode or pixel that the semiconductor detector of the disclosure can also include being filled on the ray plane of incidence
Insulant between anode and blocking electrode.
In the semiconductor detector according to the disclosure, plain anode or pixel negative electrode can be arranged as one dimensional linear array or two dimension
Face battle array.
Can also be included for the pixel anode or pixel on the ray plane of incidence according to the semiconductor detector of the disclosure
Welding lead or PCB encapsulation that negative electrode and blocking electrode are biased.
In accordance with an embodiment of the present disclosure, blocking electrode can be added on the ray plane of incidence.Blocking electrode can stop spy
The radiation signal surveyed between device pixel, makes the ray into detector incide in pixel, so as to avoid the electric charge between pixel
It is shared, the imaging resolution of detector is improved, shared impact of the signal to detector performance is reduced.
Description of the drawings
By description referring to the drawings to the embodiment of the present disclosure, the above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 shows the perspective view of the semiconductor detector according to the embodiment of the present disclosure；
Fig. 2 (a) shows the sectional view of the electrode structure according to the embodiment of the present disclosure；
Fig. 2 (b) shows the sectional view of the electrode structure according to the embodiment of the present disclosure；
Fig. 2 (c) shows the sectional view according to the encapsulation of the PCB of the embodiment of the present disclosure；
Fig. 3 shows the plane graph of the electrode structure according to the embodiment of the present disclosure；And
Fig. 4 shows the plane graph of the electrode structure according to another embodiment of the disclosure.
Specific embodiment
Hereinafter, will be described with reference to the accompanying drawings embodiment of the disclosure.However, it should be understood that these descriptions are simply exemplary
, and it is not intended to limit the scope of the present disclosure.Additionally, in the following description, the description to known features and technology is eliminated, with
Avoid unnecessarily obscuring the concept of the disclosure.
The various structural representations according to the embodiment of the present disclosure are shown in the drawings.These figures are not drawn to scale
, wherein for the purpose of clear expression, being exaggerated some details, and some details may be eliminated.Shown in figure
Various regions, the shape of layer and the relative size between them, position relationship are only exemplary, in practice because of system
Make tolerance or technical limitations and deviation, and those skilled in the art can be designed with difference in addition according to actually required
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when by one layer/element referred to as positioned at another layer/element " on " when, the layer/element can
With on another layer/element, or between them, there may be intermediate layer/element.In addition, if in a kind of direction
In one layer/element be located at another layer/element " on ", then when turn towards when, the layer/element may be located at another layer/unit
Part D score.
Fig. 1 shows the perspective view of the semiconductor detector according to the embodiment of the present disclosure.
As shown in figure 1, semiconductor probe material 101 can be included according to the semiconductor detector 100 of the embodiment.
This, semiconductor probe material 101 can be interacted with radiation to be detected, and produce electric charge.For example, quasiconductor is visited
Material 101 of measuring and monitoring the growth of standing timber can include CdZnTe, Ge, CdTe, HgI2、PbI2, TlBr or GaAs.In the following description, with CdZnTe
(CZT) it is described as a example by, but disclosure not limited to this.Semiconductor probe material 101 can be crystalline material, therefore which is extremely
Few some surfaces for example can be obtained by cleavage.In this example, semiconductor probe material 101 is shown as into hexahedron
(more specifically, cuboid), size are for about 10mm × 10mm × 5mm.But disclosure not limited to this.
Semiconductor probe material 101 can include relative side 101S-1 and 101S-2, can be with the two sides
Negative electrode 103 and anode 105 are formed respectively.Electric field can be formed between negative electrode 103 and anode 105, is radiated half to guide
Electric charge caused by conductor detection material 101, to detect to radiation.In the following description, with side 101S-1 as spoke
It is described as a example by the ray plane of incidence penetrated.Ray can include such as X-ray, gamma ray, isotope ray and Alpha
At least one of ray.In this case, radiation can be incided in semiconductor probe material 101 with Jing negative electrodes 103, with quasiconductor
Detection material 101 interacts, and produces electric charge (for example, electronics).Electric charge can be collected by anode 105, and is thus made
For the detectable signal of detector result of detection.Certainly, disclosure not limited to this.For example, ray can be incident from side 101S-2.
In this case, in below describing, negative electrode and anode can be exchanged.
Negative electrode 103 and anode 105 each can for example include conductive material, such as metal material such as gold, platinum, nickel, titanium, indium
Middle a kind of or their mixing material, or can be their lamination.Negative electrode 103 and anode 105 for example can be by partly
Conductive material is deposited with respectively on the side 101S-1 and 101S-2 of conductor detection material 101, and the conductive material to being deposited with is carried out
Photoetching is forming.In this respect it is to be noted that negative electrode 103 and anode 105 can include identical or different material.
Negative electrode 103 and anode 105 can be formed as various patterns.Here, being described by taking pixel type electrode as an example.Specifically
Ground, negative electrode 103 can be formed as the pel array formed on the 101S-1 of side, and anode 105 can be formed as on the 101S-2 of side
Pel array.This array can be one dimensional linear array or two-dimensional array.This is further detailed below.
Fig. 2 (a) shows the sectional view of the electrode structure according to the embodiment of the present disclosure.
As shown in Fig. 2 (a), according to the semiconductor detector 200 of the embodiment can include semiconductor probe material 201 with
And the negative electrode and anode on the opposite flank of the semiconductor probe material 201.Here, negative electrode and anode are all formed as pixel
Configuration, respectively including pixel negative electrode 203 and pixel anode 205.These pixel electrodes (negative electrode or anode) define that quasiconductor is visited
Survey the detected pixel of device.Here, so-called " detected pixel ", refers to result of detection of the detector according to these pixels, come to being visited
The radiation of survey is imaged, i.e., detected pixel is corresponding to the pixel in radiation image.With regard to semiconductor probe material, anode and the moon
The configuration of pole, referring also to the description above in association with Fig. 1.
In general, pixel negative electrode 203 and pixel anode 205 can be corresponded each other.That is, one pixel negative electrode 203
A pixel anode 205 is can correspond to, for example they are aligned each other in position, it is highly preferred that mutual center alignment.In
It is that in semiconductor probe material 201, caused electric charge can be corresponding via the ray of 203 incidence of pixel negative electrode
Pixel anode 205 collect.It is to be herein pointed out the size and shape of pixel negative electrode 203 and pixel anode 205 can phase
Together, it is also possible to different.
Such as explained in the background section, there is charge sharing problem in the semiconductor detector of pixel configuration.For this purpose, root
Also include being arranged at the blocking electrode 207 of 203 periphery of pixel negative electrode according to the semiconductor detector 200 of the embodiment.More specifically,
Blocking electrode 207 can be arranged around pixel negative electrode 203, so as to limit the aperture of pixel-oriented negative electrode 203, incident ray
Can be incided on pixel negative electrode 203 by these apertures.Can according to actual needs, adjustment aperture.For example, can increase
Aperture, to improve counting rate.
Blocking electrode 207 can be made up of the material that can absorb or stop ray.For example, blocking electrode 207 can be with
Including high atomic number (for example, being not less than the atomic number of ferrum) metal material such as lead, ferrum, tungsten, copper, gold, platinum or indium, Huo Zheqi
His metal material such as aluminum etc., or can be their mixing material or lamination, the lamination of such as lead and copper.
The thickness of blocking electrode 207 can be determined according to the energy of incident ray so that be enough to absorb or stop incidence
Ray.Furthermore it is also possible to according to the performance and thickness of semiconductor probe material 201, determine the thickness of blocking electrode 207.
For example, although the thickness of blocking electrode 207 is not enough to stop incident ray completely, but the ray not being blocked does not affect detection
Device normal work.
The edge of blocking electrode 207 can be relative to the border in gap between respective pixel anode 205 (in Fig. 2 (a)
Shown in dotted line) stretch out, therefore blocking electrode 207 can be more than the gap between respective pixel anode 205, such that it is able to have
Region between pixel anode 205 is blocked effect.In accordance with an embodiment of the present disclosure, blocking electrode 207 can be in alignment with corresponding picture
Gap (for example, center alignment) between plain anode 205.Correspondingly, the periphery of pixel negative electrode 203 can be relative to respective pixel
Retract the periphery of anode 205.
Then, when ray (for example, vertical) incides the plane of incidence (upper surface in Fig. 2 (a)), it is incident on pixel anode
The ray of middle position can be blocked electrode 207 to be stopped.This way it is possible to avoid the shared problem of electric charge.
The size of blocking electrode 207 and pixel negative electrode 203 can be according to practical application, the chi of semiconductor probe material 201
Depending on very little and performance.For example, in pixel precision requires higher application such as medical treatment CT, can arrange little pixel negative electrode and
With respect to large-area blocking electrode；And in the application that pixel precision requires relatively low, the relative area of blocking electrode can reduce.
In Fig. 2 (a), show a case that blocking electrode 207 is higher than pixel negative electrode 203.But, the disclosure is not limited to
This.The thickness of blocking electrode 207 can also be identical with the thickness of pixel negative electrode 203.In addition, cloudy with pixel in blocking electrode 207
Between pole 203, can be with fill insulant (not shown).
In the case where blocking electrode 207 is higher than pixel negative electrode 203, such as shown in Fig. 2 (b), can be for example, by wire 209
Pixel negative electrode 203 is led to into extraction electrode 211.Furthermore it is possible to fill insulant 213, insulation between blocking electrode 207
Material 213 covers pixel negative electrode 203.Extraction electrode 211 can be arranged on insulant 213.So, extraction electrode 211
Can be in substantially approximately the same plane with blocking electrode 207, the conveniently connection of skew and the encapsulation of pcb board.
For in detection process, pixel negative electrode 203 is arranged with the bias of blocking electrode 207, can be hung down by benchmark radiographic source
Straight irradiation pixel negative electrode so that under selected bias, the signal into pixel negative electrode 203 is entirely by by corresponding pixel anode 205
Collection.Pixel negative electrode 203 can be with identical with the bias of blocking electrode 207, it is also possible to different.Can be by welding lead to them
It is biased.Or, it is also possible to encapsulate to be biased by PCB.
Show in Fig. 2 (c) that the example PCB for semiconductor detector 200 shown in Fig. 2 (b) is encapsulated.Such as Fig. 2
C shown in (), the side (downside in figure) of PCB 220 can be bound to the side of semiconductor detector 200 (in figure
Side).In the side of PCB 220, pad 221 can be set, made electrical contact with for the extraction electrode 211 with pixel negative electrode.Example
Such as, the pattern of pad 221 can be identical with the pattern of extraction electrode 211.Pad 221 can cause PCB circuits by via 223
The opposite side (upside in figure) of plate 220.In addition, the via corresponding with blocking electrode 207 is additionally provided with PCB 220
225.Via 223,225 can be connected to bias in the opposite side (upside in figure) of PCB.
Fig. 3 shows the plane graph of the electrode structure according to the embodiment of the present disclosure.
The two-dimensional array of pixel negative electrode 303 can be included according to the electrode 300 on the ray plane of incidence of the embodiment.
In fig. 3 it is shown that 4 × 4 array, but disclosure not limited to this.The disclosure can include greater or lesser array, and
Pixel count in array in row is not necessarily equal to the pixel count in row.Correspondingly, on opposite sides, pixel anode also can be formed
4 × 4 array (not shown).
In this example, pixel negative electrode 303 is shown as into square, but disclosure not limited to this.For example, pixel negative electrode
303 can be formed as the other shapes such as rectangle, circle, rhombus according to actual needs.
In addition, electrode 300 also includes blocking electrode 307.In this example, blocking electrode 307 is formed as monolithic, covers whole
The individual plane of incidence.The blocking electrode 307 of the monolithic internally defines some apertures, and pixel negative electrode 303 is arranged in these apertures.
Aperture can be formed as the space of square, rectangle, circle or rhombus, such that it is able to correspondingly in these apertures, this arranges square
The pixel negative electrode 303 of shape, rectangle, circle or rhombus.Certainly, the shape of the shape in aperture and pixel negative electrode 303 need not phase completely
Together.Between the periphery of the inwall and pixel negative electrode 303 in aperture, insulant can be set.
In the embodiment above, the array of pixel anode is shown as into two-dimensional array, but disclosure not limited to this.Example
Such as, the array of pixel anode can be other layouts such as one dimensional linear array or trapezium structure.
Fig. 4 shows the plane graph of the electrode structure according to another embodiment of the disclosure.
As shown in figure 4, one dimensional linear array and the setting of pixel negative electrode 403 can be included according to the electrode 400 of the embodiment
In the blocking electrode 407 of 403 periphery of pixel negative electrode.With regard to their configuration, above description is may refer to.
Embodiment of this disclosure is described above.But, the purpose that these embodiments are merely to illustrate that, and
It is not intended to limit the scope of the present disclosure.The scope of the present disclosure is limited by claims and its equivalent.Without departing from this public affairs
The scope opened, those skilled in the art can make various alternatives and modifications, and these alternatives and modifications all should fall in the disclosure
Within the scope of.
Claims (7)
1. a kind of semiconductor detector, including：
Semiconductor probe material, including first side relative to each other and second side, wherein, first side and second side it
One is the ray plane of incidence for receiving incident ray；
The multiple pixel negative electrodes being arranged in first side；
The multiple pixel anodes being arranged in second side, wherein, pixel anode is corresponded each other with pixel negative electrode；And
It is arranged at the blocking electrode of each pixel negative electrode or pixel anode periphery on the ray plane of incidence.
2. semiconductor detector according to claim 1, wherein,
The ray plane of incidence is first side, and blocking electrode is arranged at each pixel negative electrode periphery and in alignment between respective pixel anode
Gap；Or
The ray plane of incidence is second side, and blocking electrode is arranged at each pixel anode periphery and in alignment between respective pixel negative electrode
Gap.
3. semiconductor detector according to claim 1, wherein, pixel anode or pixel negative electrode be shaped as square,
Rectangle, circle or rhombus.
4. semiconductor detector according to claim 1, wherein, blocking electrode limits square, rectangle, circle or Pedicellus et Pericarpium Trapae
Pixel negative electrode or pixel anode on the space of shape, and the ray plane of incidence is in corresponding space.
5. semiconductor detector according to claim 1, also includes：Pixel negative electrode or the picture being filled on the ray plane of incidence
Insulant between plain anode and blocking electrode.
6. semiconductor detector according to claim 1, wherein, blocking electrode is higher than the pixel negative electrode on the ray plane of incidence
Or pixel anode, and the semiconductor detector also includes：
The insulant being arranged between blocking electrode, insulant cover the pixel negative electrode or pixel sun on the ray plane of incidence
Pole；
The extraction electrode being arranged on insulant；And
Pixel negative electrode or pixel anode on the plane of incidence is electrically connected to into the wire of extraction electrode.
7. semiconductor detector according to claim 1, wherein, pixel anode or pixel cathode arrangement be one dimensional linear array or
Two-dimensional array.
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| CN201621032761.6U CN206074817U (en) | 2016-08-31 | 2016-08-31 | Semiconductor detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106324649A (en) * | 2016-08-31 | 2017-01-11 | 同方威视技术股份有限公司 | Semiconductor detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106324649A (en) * | 2016-08-31 | 2017-01-11 | 同方威视技术股份有限公司 | Semiconductor detector |
| CN106324649B (en) * | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | semiconductor detector |
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