CN104898153A - Novel industrial and medical image photoelectric detection plate device - Google Patents
Novel industrial and medical image photoelectric detection plate device Download PDFInfo
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- CN104898153A CN104898153A CN201510349746.8A CN201510349746A CN104898153A CN 104898153 A CN104898153 A CN 104898153A CN 201510349746 A CN201510349746 A CN 201510349746A CN 104898153 A CN104898153 A CN 104898153A
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Abstract
The invention provides a novel photoelectric detection plate device on an industrial and medical perspective digital image development occasion. The device is manufactured on a flexible thin film material and comprises a photoelectric detection area and a parallel data processing area. The photoelectric detection area is a structure formed by charge storage arrays, outwardly coated by a photosensitive paint and precisely positioned in geometry. The parallel data processing area is a parallel structure which is controlled by a microprocessor and used for light quantum charge integration amplification, analog-to-digital conversion and image information data exchange. The photoelectric detection area is the structure characterized in that a plurality of the structures can be folded to form a plat or a curved-surface shape.
Description
Technical field
The present invention relates to the electronic information technical field of the industry perspective chromatography image light electro-detection such as industry, medical science, security protection.Be specifically related to a kind of industry and medical image Photoelectric Detection board device.
Background technology
In digitized image developing system, that considers volume, processing speed and acquisition of information enriches degree, x-ray energy conversion becomes electric signal mostly to be realized by flat-panel detector, and lithograph forms the core technology of digital picture development treatment as the computer image processing technology in detector technologies and system.So the characteristic of flat-panel detector has a huge impact digital picture quality.In practical application normal wish to adopt make every effort to large scale as far as possible and the high X-ray detector of resolution, to obtain large area of detection, high-quality complete X ray absorption image, such as, in the once rotation of X ray system around patient, scan whole organ, obtain the whole perspective information of the thoracic cavity of such as patient, heart.But because flat-panel detector technology relates to nuclear physics, semiconductor physics, the many technical fields of material science, its core manufacturing technology is more complicated, and application cost is also very high, especially, the flat-panel detector product of big size.
Patent of the present invention proposes a kind of digital picture flat-panel detector device based on flexible circuit manufacturing technology, under the prerequisite of low production cost, sweetly disposition picture signal, use the semi conductive high density large scale integrated chip finished product technology of existing maturation, the opto-electronic conversion detecting device of design team's synthesis large-size, and keep close to the spatial resolution of amorphous silicon visual detector and the level of detective quantum efficiency.
Summary of the invention
Technical matters to be solved by this invention is to provide low production cost, image sensing signal sweetly disposition in a kind of industry and medical image numeral development treatment, spatial resolution and the moderate image flat-panel detector device of detective quantum efficiency.
Technical matters to be solved by this invention realizes by the following technical solutions: a kind of infant industry and medical image Photoelectric Detection board device, for X ray numeral development occasions such as industry, medical science, security protections, comprise multiple photodetector unit composition L-type strip-shaped flexible thin film circuit, multiple L-type strip-shaped flexible thin film circuit is superimposed or to be formed by stacking complete detector device by curved surface by plane.Described photodetector unit is divided into Photoelectric Detection district and Liang Ge district of Synchronous data dispose district, and by a 5X5, totally 25 charge storage arrays, a large-scale fet switch control chip, a public charge integrating circuit and unit microprocessor parallel processing chips are formed.
The charge accumulator that described charge storage array is arranged by the five-element five forms, its better application example is the level interval 1000 μm ~ 2000 μm of storer, vertical interval is 1000 μm ~ 1500 μm, rectangle or circle, the all-round photosensitive coating of surface coating visible ray, as be applied to X-ray digital image photosensitive time, storer geometric center aim at flash layer cesium iodide grid filler opening center.For this reason, the colour developing post in its corresponding X-ray scintillation body layer or luminescent coating need be designed to the distribution of corresponding geometric position.
Described large-scale fet switch control chip needs energy single to control ground connection and the sample of signal of the analog channel of more than 25, and package dimension is less than below 8X8cm.As higher accurate dimension location will be obtained, nude film need be used to mount.
Described charge integrating circuit, is converted into electric signal the light quantum got on storer, and the signal to noise ratio (S/N ratio) of picture signal and this Earth noise is higher than 12 bits.A more excellent example uses the TLV2252 dual operational amplifier chip of micropackaging to construct integrating circuit.
Described unit microprocessor parallel processing chip is made up of 16 risc microcontroller chips of micropackaging and built-in high-speed a/d change-over circuit.Several more excellent example uses the TSSOP14 paster encapsulation of MSP430F2013 or the UFQFPN20 paster encapsulation of STM8L151F3U6.When obtaining the spatial resolution of 300 μm more than X300 μm, nude film need be used to mount.
Described L-type strip-shaped flexible thin film circuit is made up of 10 ~ 15 photodetector unit, and form Liang Ge district altogether, one is Photoelectric Detection district, and one is realtime graphic parallel processing district; Photoelectric Detection sector width 5 ~ 7mm, realtime graphic parallel processing sector width is the former 2 ~ 3 times.Single L-type strip-shaped flexible thin film circuit can make banded dull and stereotyped visual detector, applies in scan-type image digitization toning system, and the image as bone digital angiography, X-ray machine security protection instrument etc. detects; Multiple L-type strip-shaped flexible thin film circuit can be overlapped into flat or curved face type visual detector, applies in local radiography and CT tomographic map opto-electronic conversion.
Accompanying drawing explanation
Fig. 1 is single photodetector unit electrical block diagram in apparatus of the present invention.Fig. 2 is L-type strip-shaped flexible thin film circuit cross section structure schematic diagram in apparatus of the present invention.Fig. 3 is that in apparatus of the present invention, L-type flexible thin film circuit is overlapped into complete detector structural representation by plane.Fig. 4 is that in apparatus of the present invention, L-type flexible thin film circuit is overlapped into complete detector structural representation by curved surface.
Embodiment
In order to make technological means of the present invention, creation characteristic, reach object and effect is easy to understand, below in conjunction with concrete diagram, illustrate the present invention further.
As shown in Figure 1, a kind of infant industry and medical image Photoelectric Detection board device, for the Photoelectric Detection of the industry perspective tomographic maps such as industry, medical science, security protection, comprise multiple photodetector unit circuit composition L-type strip-shaped flexible thin film circuit, by plane, superimposed or curved surface is formed by stacking complete detector device multiple L-type flexible thin film circuit.Described photodetector unit circuit production is on fexible film, flexible thin thickness 100 μm ~ 200 μm, be divided into Photoelectric Detection district (1) and Synchronous data dispose district (2) Liang Ge district, Photoelectric Detection district (1) by a 5X5 totally 25 charge memory arrays (3) form; Synchronous data dispose district (2) is made up of a large-scale fet switch control chip (4), a public charge integrating circuit (5) and a unit microprocessor parallel processing chip (6); The charge accumulator (3) that the upper five-element five of laying in described Photoelectric Detection district (1) arrange, a better application example is the level interval 1000 μm ~ 2000 μm of storer, vertical interval is 1000 μm ~ 1500 μm, charge accumulator is rectangular or circular, the all-round photosensitive coating of equal surface coating visible ray, each storer geometric center aims at flash layer cesium iodide grid filler opening center.As shown in Fig. 3 institute, described whole Photoelectric Detection districts (1), (7) are overlapped into complete photoelectricity flat board and contact with X-ray scintillation floor.Large-scale fet switch control chip (4) energy single in described Synchronous data dispose district (2) controls ground connection and the sample of signal of the analog channel of more than 25; Sampling microprocessor parallel processing chip (6) controls the connection of charge accumulator (3) and public charge integrating circuit (5), and the high-speed a/d conversion of integrated signal, carries out data communications exchange after EOC.Microprocessor chip in whole Synchronous data dispose districts (2), (8) carries out concurrent working.As shown in Figure 4, described Photoelectric Detection district (1), (7) also can be overlapped into curved surface by required.
More than show and describe ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not by the restriction of above-mentioned enforcement; what describe in above-mentioned embodiment and instructions just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (4)
1. infant industry and a medical image Photoelectric Detection board device, is characterized in that, this device is produced on a kind of flexible thin-film material, comprises the image light electro-detection slab construction in Photoelectric Detection district and Liang Ge district of Synchronous data dispose district.
2. a kind of infant industry according to claim 1 and medical image Photoelectric Detection board device, is characterized in that, described Photoelectric Detection district is made up of charge storage array, surface coating photosensitive coating, and the pinpoint structure of geometry.
3. a kind of infant industry according to claim 1 and medical image Photoelectric Detection board device, it is characterized in that, described Synchronous data dispose district is a kind of Microprocessor S3C44B0X, carry out the parallel organization that the amplification of light quantum charge integration, analog to digital conversion and image information data exchange.
4. a kind of infant industry according to claim 1 and medical image Photoelectric Detection board device, is characterized in that, described Photoelectric Detection district is the structure that multiplely can be overlapped into flat board or curved surface present situation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510349746.8A CN104898153B (en) | 2015-06-24 | 2015-06-24 | A kind of infant industry and medical image Photoelectric Detection board device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510349746.8A CN104898153B (en) | 2015-06-24 | 2015-06-24 | A kind of infant industry and medical image Photoelectric Detection board device |
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| CN104898153A true CN104898153A (en) | 2015-09-09 |
| CN104898153B CN104898153B (en) | 2018-06-19 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881171A (en) * | 1986-07-09 | 1989-11-14 | U.S. Philips Corp. | Scintillation camera having simplified electronic control |
| JPH0868863A (en) * | 1994-08-29 | 1996-03-12 | Shimadzu Corp | Radiation detector |
| CN102346260A (en) * | 2011-06-08 | 2012-02-08 | 上海奕瑞光电子科技有限公司 | X-ray flat panel detector with temperature sensing function and preparation method thereof |
| CN203981890U (en) * | 2014-07-04 | 2014-12-03 | 上海奕瑞光电子科技有限公司 | A kind of X ray flat-panel detector structure |
-
2015
- 2015-06-24 CN CN201510349746.8A patent/CN104898153B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881171A (en) * | 1986-07-09 | 1989-11-14 | U.S. Philips Corp. | Scintillation camera having simplified electronic control |
| JPH0868863A (en) * | 1994-08-29 | 1996-03-12 | Shimadzu Corp | Radiation detector |
| CN102346260A (en) * | 2011-06-08 | 2012-02-08 | 上海奕瑞光电子科技有限公司 | X-ray flat panel detector with temperature sensing function and preparation method thereof |
| CN203981890U (en) * | 2014-07-04 | 2014-12-03 | 上海奕瑞光电子科技有限公司 | A kind of X ray flat-panel detector structure |
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