CN104849744A - Novel photoelectric detection device for industrial and medical images - Google Patents
Novel photoelectric detection device for industrial and medical images Download PDFInfo
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- CN104849744A CN104849744A CN201510349761.2A CN201510349761A CN104849744A CN 104849744 A CN104849744 A CN 104849744A CN 201510349761 A CN201510349761 A CN 201510349761A CN 104849744 A CN104849744 A CN 104849744A
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Abstract
The invention provides a novel photoelectric detection device for developing occasions of industrial and medical perspective digital images. The device is disposed on a multi-layer printed circuit board material, and comprises a photoelectric detection region and a parallel data processing region. The photoelectric detection region is in an intensive structure which consists of a charge storage array, wherein the surface of the intensive structure is provided with a light-sensing coating in a coated manner. The parallel data processing region is in a parallel structure which is controlled by a microprocessor, wherein the interior of the parallel structure is provided with a high-speed A/D converter, and the parallel structure is used for controlling the amplification of light quantum charges and the exchange of image information data. The photoelectric detection region is in a horizontally-moving scannable structure which achieves precise synchronous control with a transmission X light beam.
Description
Technical field
The present invention relates to the electronic information technical field of the industry perspective chromatography image light electro-detection such as industry, medical science, security protection.Be specifically related to a kind of industry and medical image photoelectric detection system.
Background technology
In digitized image developing system, that considers volume, processing speed and acquisition of information enriches degree, x-ray energy conversion becomes electric signal mostly to be realized by flat-panel detector or strip-shaped detector, and the computer image processing technology in image photodetector technologies and system forms the core technology of digital picture development treatment.So the characteristic of image light photodetector has a huge impact digital picture quality.In practical application normal wish to adopt make every effort to large scale as far as possible and the high X-ray detector of resolution, to obtain large area of detection, high-quality complete X ray absorption image, such as, in the once rotation of X ray system around patient, scan whole organ, obtain the whole perspective information of the thoracic cavity of such as patient, heart.But because large-area flat-plate detector technologies relates to nuclear physics, semiconductor physics, the many technical fields of material science, its core manufacturing technology is more complicated, and application cost is also very high, especially, the flat-panel detector product of big size.
Patent of the present invention proposes a kind of digital picture pick-up unit based on multilayer board circuit manufacturing technology, under the prerequisite of low production cost, sweetly disposition picture signal, use the semi conductive high density large scale integrated chip finished product technology of existing maturation, the opto-electronic conversion detecting device of the larger banded size of design team's synthesis, and keep close to the spatial resolution of amorphous silicon visual detector and the level of detective quantum efficiency.
Summary of the invention
Technical matters to be solved by this invention is to provide low production cost, image sensing signal sweetly disposition in a kind of industry and medical image numeral development treatment, spatial resolution and the high image light electric detection means of detective quantum efficiency.
Technical matters to be solved by this invention realizes by the following technical solutions: a kind of infant industry and medical image photoelectric detection system, for X ray numeral development occasions such as industry, medical science, security protections, comprise multiple photodetector unit composition L-type multilayer board circuit, be arranged on two stainless steel shafts of being close to below X-ray scintillation layer, driven by accurate digital control motor and do horizontal scanning campaign, form complete pick-up unit with radiographic source.
Described photodetector unit is divided into Photoelectric Detection district and Gong Sange district of two Synchronous data dispose district, arranges totally 50 charge storage arrays, large-scale fet switch control chip, public charge integrating circuit and unit microprocessor parallel processing chips form by the five-element ten.
Described charge storage array by 5X10 totally 50 charge accumulators form, its better application example is level interval 1000 μm of m of storer, vertical interval 1000 μm, rectangle or circle, the all-round photosensitive coating of surface coating visible ray.
Described large-scale fet switch control chip needs energy single to control ground connection and the sample of signal of the analog channel of more than 25, and package dimension is less than below 8X8cm.As higher accurate dimension location will be obtained, nude film need be used to mount.
Described charge integrating circuit, is converted into electric signal the light quantum got on storer, and the signal to noise ratio (S/N ratio) of picture signal and this Earth noise is higher than 12 bits.A more excellent example uses the TLV2252 dual operational amplifier chip of micropackaging to construct integrating circuit.
Described unit microprocessor parallel processing chip is made up of 16 risc microcontroller chips of micropackaging and built-in high-speed a/d change-over circuit.Several more excellent example uses the TSSOP14 paster encapsulation of MSP430F2013 or the UFQFPN20 paster encapsulation of STM8L151F3U6.When obtaining the spatial resolution of 200 μm more than X200 μm, nude film need be used to mount.
The banded multilayer board circuit of described L-type is made up of 10 ~ 15 photodetector unit, and form three districts altogether, one is Photoelectric Detection district, and two is realtime graphic parallel processing district; Photoelectric Detection sector width 5 ~ 7mm, realtime graphic parallel processing sector width is the former 2 ~ 3 times.L-type multilayer board circuit thickness 800 μm, be fixed on the two stainless steel shafts below X-ray scintillation layer, driven by accurate digital control motor and do horizontal scanning, form scan-type image digitization toning system with x-ray source, apply in the image light electro-detection of bone digital angiography, thoracic cavity digital angiography, X-ray machine security protection instrument, inside workpiece structure perspective etc.; Also application in resolving can be detected at the circulating type tomographic map that rate request is lower slightly.
Accompanying drawing explanation
Fig. 1 is single photodetector unit electrical block diagram in apparatus of the present invention.Fig. 2 is L-type banded multilayer circuit board Facad structure schematic diagram in apparatus of the present invention.Fig. 3 is apparatus of the present invention structural section schematic diagram.
Embodiment
In order to make technological means of the present invention, creation characteristic, reach object and effect is easy to understand, below in conjunction with concrete diagram, illustrate the present invention further.
As shown in Figure 3, a kind of infant industry and medical image photoelectric detection system, for the Photoelectric Detection of the industry perspective tomographic maps such as industry, medical science, security protection, comprise banded multilayer board circuit (19) of multiple photodetector unit circuit composition L-type, P.e.c. plate thickness 800 μm, be fixed on the two stainless steel shafts below X-ray scintillation layer (17) (18), driven by accurate digital control motor and do horizontal scanning, form scan-type image digitization toning system with x-ray source (11).As shown in Fig. 1, described photodetector unit circuit production, on multilayer board, is divided into Photoelectric Detection district (1) and Synchronous data dispose district (2), (3) three districts; The upper five-element ten of laying in described Photoelectric Detection district (1) arrange totally 50 charge memory arrays (4) and form; A better application example is the level interval 1000 μm of storer, and vertical interval is 1000 μm, and charge accumulator is rectangular or circular, all the all-round photosensitive coating of surface coating visible ray; Described Synchronous data dispose district (2), (3), be made up of large-scale fet switch control chip (7), (8), public charge integrating circuit (6), (9) and unit microprocessor parallel processing chip (5), (10).As shown in Figure 3, X ray source capsule (11) and ray window (12) by can precision rotation shielding lead (13) wrap up, shielding lead has strip light penetrating slit (14), the light penetrating slit scanning of X-ray transparent shielding lead is radiated on sample (15), and through pick-up unit thin layer (16), flash layer (17); Described shielding lead (13) and stainless steel shaft (18) stringent synchronization rotation sweep, guarantee to project the flash layer region, top that X ray falls Photoelectric Detection district.Microprocessor chip (5) in described Synchronous data dispose district (2), (8), (10), carry out concurrent working, control charge accumulator (4) with public charge integrating circuit (6), (9) connection, change with the high-speed a/d of integrated signal, after EOC, carry out data communications exchange.
More than show and describe ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not by the restriction of above-mentioned enforcement; what describe in above-mentioned embodiment and instructions just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (5)
1. infant industry and a medical image photoelectric detection system, is characterized in that, this device is produced on a kind of multilayer board material, comprises the image photoelectricity measures the structure in Photoelectric Detection district and Liang Ge Synchronous data dispose district.
2. a kind of infant industry according to claim 1 and medical image photoelectric detection system, is characterized in that, described Photoelectric Detection district be a kind ofly to be made up of charge storage array, the banded structure of surface coating photosensitive coating.
3. a kind of infant industry according to claim 1 and medical image photoelectric detection system, is characterized in that, the parallel organization that described Liang Ge Synchronous data dispose district is a kind of Microprocessor S3C44B0X, built-in high-speed a/d is changed and image information data exchanges.
4. a kind of infant industry according to claim 1 and medical image photoelectric detection system, is characterized in that, described Photoelectric Detection district is a kind of accurate controlled architecture can doing horizontal direction scans movement.
5. a kind of infant industry according to claim 1 and medical image photoelectric detection system, is characterized in that, described Photoelectric Detection district is the accurate controlled architecture stitching stringent synchronization rotation sweep with the transmission on the shielding lead outside X ray source capsule.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510349761.2A CN104849744B (en) | 2015-06-24 | 2015-06-24 | A kind of infant industry and medical image photoelectric detection system |
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| CN201510349761.2A CN104849744B (en) | 2015-06-24 | 2015-06-24 | A kind of infant industry and medical image photoelectric detection system |
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| CN104849744A true CN104849744A (en) | 2015-08-19 |
| CN104849744B CN104849744B (en) | 2018-06-19 |
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Citations (6)
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| JPS5776466A (en) * | 1980-10-29 | 1982-05-13 | Toshiba Corp | Radiation detector |
| JPH0868863A (en) * | 1994-08-29 | 1996-03-12 | Shimadzu Corp | Radiation detector |
| CN1688253A (en) * | 2002-10-03 | 2005-10-26 | 皇家飞利浦电子股份有限公司 | Symmetrical multiple-slice computed tomography data measuring system |
| CN1957846A (en) * | 2005-11-01 | 2007-05-09 | Ge医疗系统环球技术有限公司 | X-ray detector and X-ray CT apparatus |
| CN103314308A (en) * | 2011-01-21 | 2013-09-18 | 通用电气公司 | X-ray system and method for sampling image data |
| CN104267424A (en) * | 2014-10-24 | 2015-01-07 | 哈尔滨工业大学 | X-ray omnidirectional detector |
-
2015
- 2015-06-24 CN CN201510349761.2A patent/CN104849744B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5776466A (en) * | 1980-10-29 | 1982-05-13 | Toshiba Corp | Radiation detector |
| JPH0868863A (en) * | 1994-08-29 | 1996-03-12 | Shimadzu Corp | Radiation detector |
| CN1688253A (en) * | 2002-10-03 | 2005-10-26 | 皇家飞利浦电子股份有限公司 | Symmetrical multiple-slice computed tomography data measuring system |
| CN1957846A (en) * | 2005-11-01 | 2007-05-09 | Ge医疗系统环球技术有限公司 | X-ray detector and X-ray CT apparatus |
| CN103314308A (en) * | 2011-01-21 | 2013-09-18 | 通用电气公司 | X-ray system and method for sampling image data |
| CN104267424A (en) * | 2014-10-24 | 2015-01-07 | 哈尔滨工业大学 | X-ray omnidirectional detector |
Non-Patent Citations (2)
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| 何清义等: "CL128E与CL256C型自扫描光电二极管列阵的研究", 《西南师范大学学报》 * |
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