CN202270031U - X ray/proton image detector - Google Patents
X ray/proton image detector Download PDFInfo
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- CN202270031U CN202270031U CN2011203629036U CN201120362903U CN202270031U CN 202270031 U CN202270031 U CN 202270031U CN 2011203629036 U CN2011203629036 U CN 2011203629036U CN 201120362903 U CN201120362903 U CN 201120362903U CN 202270031 U CN202270031 U CN 202270031U
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Abstract
The utility model designs an X ray/proton image detector, which mainly comprises an X ray/proton conversion layer, wherein a layer of amorphous silicon image sensing array is arranged at the lower part of the X ray/proton conversion layer in a contact manner and the amorphous silicon image sensing array is electrically connected with the X ray/proton conversion layer; the amorphous silicon image sensing array is electrically connected with a signal buffer; the signal buffer is electrically connected with an analogue-digital converter; the analogue-digital converter is electrically connected with a control circuit; a layer of attenuation layer is arranged at the lower part of the amorphous silicon image sensing array; the X ray/proton conversion layer and the amorphous silicon image sensing array are orderly arranged at the lower part of the attenuation layer; the X ray/proton conversion layer is electrically connected with the amorphous silicon image sensing array; and the amorphous silicon image sensing array is also electrically connected with the signal buffer. The X ray/proton image detector can be simultaneously applied to imaging application of an X ray and a proton ray, can increase image information content, improve imaging quality and has use flexibility.
Description
Technical field
This utility model relates to the image detector that carries out medical imaging with X ray/proton, specifically a kind of X ray/proton imaging detector.
Background technology
At present, digital X radiography detection (being called for short DR) technology is widely used on the medical detecting Instrument.In the X-ray radiography system, what most of company adopted is the indirect conversion pattern.X ray is converted into and the corresponding optical signal of its density by the ray conversion coating after penetrating object, and said optical signal is provided for photoelectric conversion device again, by photoelectric conversion device said optical signal is converted into the corresponding signal of telecommunication.Then, the image processing system that the said signal of telecommunication is transmitted to computer again is integrated into X ray image, thereby shows the digital picture of institute's irradiating object.
The proton photographic system is a kind of new detection imaging system.Its operation principle is to utilize the proton irradiation examined object, and penetrating component is converted into the corresponding optical signal and the signal of telecommunication by above-mentioned Transformation Program more then, finally is used for the image of constructed object.Proton has dose distribution advantage Bragg peak, and its ion energy major part is deposited on the end of range, can in irradiation, reach high accuracy and high security.In addition, the proton imaging detector can also be surveyed the energy of incident proton, thereby derives the thickness that passes object, and this point is that the X ray image detector can't be accomplished.And, the demand of proton imaging detector is also increased gradually owing to utilize the proton therapeutic cancer to become following radiotherapy development trend.
Although proton has said advantage, because the present popularity used of X ray image detector, and consider from the economy angle, be necessary to provide a kind of detector that not only had been applicable to X ray but also had been applicable to the proton ray.For the user, both can increase image information, improve image quality, possess the motility of use again.
The utility model content
The purpose of this utility model is to provide a kind of X ray that both had been applicable to be applicable to the X ray/proton imaging detector of proton ray for the deficiency that solves above-mentioned technology.
In order to achieve the above object; The X ray that this utility model designed/proton imaging detector, it mainly comprises non-crystalline silicon image sensing array, contact is provided with one deck X ray/proton conversion layer on non-crystalline silicon image sensing array top; And both are through being electrically connected; Non-crystalline silicon image sensing array is electrically connected with signal buffer, and signal buffer is electrically connected with analog-digital converter, and analog-digital converter is electrically connected with control circuit.This construction features: X ray/proton conversion coating is used to receive X ray or the proton ray that penetrates object, and becomes optical signal to the power conversion of X ray or proton ray, non-crystalline silicon image sensing array ability sensor light signal; And a small amount of fluorescent X-ray/proton ray and the X ray/proton ray that weakens; And being translated into the signal of telecommunication, the signal of telecommunication is resent to analog-digital converter through after the amplification of signal buffer; Last just reading by control circuit this signal of telecommunication of control; When surveying the proton ray, this signal of telecommunication is proportional with the stopping power of input proton, and the energy of proton ray to be measured can be derived by stopping power.Therefore through calculating, the electronic signal that detector records can convert the proton ray energy into.
Be provided with one deck damping layer in non-crystalline silicon image sensing array bottom; Be provided with one deck X ray/proton conversion layer and one deck non-crystalline silicon image sensing array successively again in the damping layer bottom; X ray/proton conversion layer and non-crystalline silicon image sensing array are electrically connected, and this non-crystalline silicon image sensing array is electrically connected with signal buffer equally.This construction features: when surveying the proton ray, utilize damping layer, make the stopping power under the different-energy that two-layer non-crystalline silicon image sensing array up and down measures, and then extrapolate the energy of proton ray more accurately.
As optimization; Signal buffer, analog-digital converter and control circuit are arranged on X ray/proton conversion layer side, do not receive X ray, proton direct irradiation, because its material is low to the tolerance of X ray/proton ray; Long-time irradiation can damage, thereby influences detector service life.
The resulting X ray of this utility model/proton imaging detector, characteristics are: can be applied in simultaneously in the application of X ray and proton radial imaging, both can increase amount of image information, improve image quality, possess the motility of use again.In the design of proton imaging system, use double-deck imaging system, improved the precision that proton energy is measured.This X ray/proton imaging detector can be used to carry out various nondestructive application in digital radiography system or the computer axial topography system.Such application possibly comprise the digital radiographic system, the X ray chromatographic imaging system, and the transverse energy of proton ray medical image system and the treatment of proton ray irradiation distributes and monitors.
Description of drawings
Fig. 1 is the structural representation of one deck imaging system for this utility model;
Fig. 2 is the structural representation of two layers of imaging system for this utility model.
The specific embodiment
Combine accompanying drawing that this utility model is done further to describe through embodiment below.
Embodiment 1:
As shown in Figure 1; X ray/proton imaging detector that present embodiment is described, it mainly comprises non-crystalline silicon image sensing array 2, contact is provided with one deck X ray/proton conversion layer 1 on non-crystalline silicon image sensing array 2 tops; And both are through being electrically connected; Non-crystalline silicon image sensing array 2 is electrically connected with signal buffer 3, and signal buffer 3 is electrically connected with analog-digital converter 4, and analog-digital converter 4 is electrically connected with control circuit 5; Signal buffer 3, analog-digital converter 4 and control circuit 5 are arranged on X ray/proton conversion layer 1 side, do not receive X ray, proton direct irradiation.
Said X ray/proton conversion coating is a cesium iodide scintillation crystal layer.Cesium iodide is strong with the ability that X ray converts visible light to, and cesium iodide is processed into column structure, can further improve the ability of catching X ray, and reduces scattered light.The thickness of said X ray/proton conversion coating is about in 50 microns to 5 millimeters the scope.
Cesium iodide scintillation crystal layer is by the collecting part of scintillator, light and electrooptical device three parts and the radiation detector of forming.So the conversion coating material of crystal scintillation detector is all similar with principle.High energy particle (x ray; Electron beam or proton beam etc.) get into behind the scintillator collision and sedimentary energy through the charged particle (mainly being electronics) of regenerating; When the orbital electron of atom in the scintillator when incoming particle is accepted the energy greater than its energy gap, just being excited transits to conduction band.Then, get back to ground state through a series of physical processes again, according to different very short fluorescence decay time of launching of mechanism of de excitation.The linear energy transfer of proton can deposit more energy far above X ray when passing the scintillation crystal of same thickness, thereby the efficient that makes cesium iodide crystal survey the proton ray is superior to X ray.
Said non-crystalline silicon image sensing array 2 is two-dimentional electrical switch with thin film transistor (TFT), is made up of the photodiode pixel array.Non-crystalline silicon image sensing array 2 is called active pixel sensor again, is characterized in: the supply voltage wide ranges makes things convenient for the design of power circuit; The circuit capacity of resisting disturbance is strong; Quiescent dissipation is low.
After the synchronous and amplification of said electronic signal through signal buffer 3, be resent to analog-digital converter 4, last just reading by control circuit 5 these electronic signals of control.Signal buffer 3, analog-digital converter 4 and control circuit 5 are to be electrically connected to each other by circuit; Be set at X ray/proton conversion layer 1 side; Do not receive X ray, proton direct irradiation; Because its material is low to X ray/proton ray tolerance, long-time irradiation can damage, and influences detector service life.
Embodiment 2:
As shown in Figure 2; X ray/proton imaging detector that present embodiment is described; Be provided with one deck damping layer 6 in non-crystalline silicon image sensing array 2 bottoms; Be provided with one deck X ray/proton conversion layer 1 and one deck non-crystalline silicon image sensing array 2 successively again in damping layer 6 bottoms, X ray/proton conversion layer 1 is electrically connected with non-crystalline silicon image sensing array 2, and this non-crystalline silicon image sensing array 2 is electrically connected with signal buffer 3 equally.
The thickness of said X ray/proton conversion coating is about in 50 microns to 5 millimeters the scope.
Said non-crystalline silicon image sensing array 2 is two-dimentional electrical switch with thin film transistor (TFT), is made up of the photodiode pixel array.Non-crystalline silicon image sensing array 2 is called active pixel sensor again, is characterized in: the supply voltage wide ranges makes things convenient for the design of power circuit; The circuit capacity of resisting disturbance is strong; Quiescent dissipation is low.
Place one deck damping layer 6 between two-layer X ray/proton conversion coating and the non-crystalline silicon image sensing array 2, said damping layer 6 is to be made up of polystyrene material, and it act as the energy that reduces through proton beam.The purpose that adds said damping layer 6 is the stopping power under the different-energy that two-layer non-crystalline silicon image sensing array 2 is measured about making, and then extrapolates the energy of more accurate former incident proton.
After the synchronous and amplification of said electronic signal through signal buffer 3, be resent to analog-digital converter 4, last just reading by control circuit 5 these electronic signals of control.Signal buffer 3, analog-digital converter 4 and control circuit 5 are to be electrically connected to each other by circuit; Be set at X ray/proton conversion layer 1 side; Do not receive X ray, proton direct irradiation; Because its material is low to X ray/proton ray tolerance, long-time irradiation can damage, and influences detector service life.
The above is merely the preferred embodiment of this utility model, and all equalizations of being done according to this utility model claim are modified and changed, and all should belong to the covering scope of this utility model.
Claims (3)
1. X ray/proton imaging detector; It mainly comprises non-crystalline silicon image sensing array; It is characterized in that contact is provided with one deck X ray/proton conversion layer on non-crystalline silicon image sensing array top, and both are through being electrically connected, non-crystalline silicon image sensing array is electrically connected with signal buffer; Signal buffer is electrically connected with analog-digital converter, and analog-digital converter is electrically connected with control circuit.
2. X ray according to claim 1/proton imaging detector; It is characterized in that being provided with one deck damping layer in non-crystalline silicon image sensing array bottom; Be provided with one deck X ray/proton conversion layer and one deck non-crystalline silicon image sensing array successively again in the damping layer bottom; X ray/proton conversion layer and non-crystalline silicon image sensing array are electrically connected, and this non-crystalline silicon image sensing array is electrically connected with signal buffer equally.
3. X ray according to claim 1 and 2/proton imaging detector is characterized in that signal buffer, analog-digital converter and control circuit are arranged on X ray/proton conversion layer side, avoid receiving X ray, proton direct irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203629036U CN202270031U (en) | 2011-09-26 | 2011-09-26 | X ray/proton image detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011203629036U CN202270031U (en) | 2011-09-26 | 2011-09-26 | X ray/proton image detector |
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| CN202270031U true CN202270031U (en) | 2012-06-13 |
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| CN2011203629036U Expired - Fee Related CN202270031U (en) | 2011-09-26 | 2011-09-26 | X ray/proton image detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490012A (en) * | 2018-04-13 | 2018-09-04 | 中国工程物理研究院激光聚变研究中心 | The sub- camera installation of double grains and method based on X-ray and proton that laser generates |
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2011
- 2011-09-26 CN CN2011203629036U patent/CN202270031U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490012A (en) * | 2018-04-13 | 2018-09-04 | 中国工程物理研究院激光聚变研究中心 | The sub- camera installation of double grains and method based on X-ray and proton that laser generates |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120613 Termination date: 20190926 |
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| CF01 | Termination of patent right due to non-payment of annual fee |