CN104885006A - 在光学正面的公共电极和相反的背面的电接触部分之间形成导电连接 - Google Patents
在光学正面的公共电极和相反的背面的电接触部分之间形成导电连接 Download PDFInfo
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Abstract
一种用于在显示器背面(34)的接触部分(24)和显示器正面(32)的公共电极(20)之间建立导电连接的技术,其包括压缩显示器正面(32)和显示器背面(34)之间的可压缩导电部件(30)的步骤,其中,所述方法还包括在所述压缩步骤之前在所述接触部分(24)和所述可压缩导电部件(30)之间插入一个或多个具有不大于5Gpa的低弹性模量的层(10,36)的步骤。
Description
一些显示装置包括层压到光学介质部件上的控制部件,并且包括处于光学介质部件的公共电极和控制部件的电路之间的电接触。
所述控制部件通常包括控制光学介质部件的相应部分的电子开关器件的阵列。所述电子开关器件的阵列通常包括形成于所述电子开关器件之上的一个或多个绝缘材料的毯式盖层(blanket layer),以及一种用于获得所述控制部件和所述光学介质部件之间的所述导电连接的常规技术涉及有意地避免在电路的用于与光学介质部件上的公共电极的导电连接的部分(接触部分)上淀积绝缘材料。
发明人已经认识到了开发用于在控制部件和光学介质部件之间建立导电连接的改进技术的挑战。
在此提供了一种在控制部件的接触元件和光学介质部件的公共电极之间建立导电连接的方法,其包括压缩在控制部件和光学介质部件之间的可压缩导电部件;其中,所述方法还包括在所述压缩之前在所述接触元件和所述可压缩部件之间插入一个或多个具有低弹性模量的层。
根据一个实施例,所述一个或多个具有低弹性模量的层包括一个或多个绝缘层,并且所述方法还包括提供贯穿所述接触元件和所述可压缩导电部件之间的所述一个或多个有机层的导电连接。
根据一个实施例,所述可压缩导电部件是包括嵌入有导电结构的导电粘合剂的垫。
根据一个实施例,所述可压缩导电部件包括导电糊剂。
根据一个实施例,所述控制部件包括像素电极的阵列和用于控制所述像素电极阵列处的电位的电子开关器件的阵列;并且所述一个或多个有机层还起着使所述像素电极与一个或多个下层导电元件绝缘的作用。
根据一个实施例,所述方法还包括贯穿一个或多个绝缘层既形成用于电子开关器件和像素电极阵列的相应的像素电极之间的导电连接的通孔(a),又形成用于所述接触元件和所述光学介质部件的所述公共电极之间的导电连接的一个或多个通孔(b)。
根据一个实施例,所述方法还包括:在所述一个或多个绝缘层的所述上表面上形成分别经由所述通孔(a)和所述一个或多个通孔(b)电连接至所述电子开关器件的阵列和所述接触元件的上导电层;以及对所述上导电层进行图案化,从而既定义所述像素电极的阵列,又定义导电连接至所述接触元件并与所述像素电极阵列电隔离的导电元件。根据一个实施例,所述一个或多个具有低弹性模量的层具有低于大约5GPa的杨氏模量。
在此还提供了一种用于层压至光学介质部件的控制部件的制造方法,所述控制部件包括像素电极的阵列和用于控制所述像素电极阵列处的电位的电子开关器件阵列,以及用于对所述光学介质部件的公共电极的导电连接的接触元件;所述方法包括:在所述电子开关器件阵列和所述接触元件之上淀积一个或多个绝缘层;以及穿过所述一个或多个绝缘层既形成用于所述电子开关器件和所述像素电极阵列的相应的像素电极之间的导电连接的通孔(a),又形成用于所述接触元件和所述光学介质部件的所述公共电极之间的导电连接的一个或多个通孔(b)。
根据一个实施例,所述方法包括:在所述一个或多个绝缘层的所述上表面上形成分别经由所述通孔(a)和所述一个或多个通孔(b)电连接至所述电子开关器件的阵列和所述接触元件的上导电层;以及对所述上导电层进行图案化,从而既定义所述像素电极的阵列,又定义导电连接至所述接触元件并与所述像素电极阵列电隔离的导电元件。
还提供了一种光学装置制造方法,其包括:将光学介质部件层压到如上文所述制造的控制部件上,其中,所述层压包括在所述导电元件和所述光学介质部件的公共电极之间插入导电垫和/或导电粘合剂。
还提供了一种光学装置制造方法,其包括:在如上文所述制造的控制部件的绝缘层的上表面上形成通过所述一个或多个通孔(b)电连接至所述接触元件的导电粘合剂层;以及将光学介质部件层压至所述控制部件,其中,所述层压包括在所述导电粘合剂层和所述光学介质部件的公共电极之间插入导电垫,或者使所述导电粘合剂层与所述光学介质部件的所述公共电极直接接触。
在此还提供了一种用于层压至光学介质部件的控制部件,其中,所述控制部件包括像素电极的阵列和用于控制所述像素电极阵列处的电位的电子开关器件阵列,以及用于对所述光学介质部件的公共电极的导电连接的接触元件;其中,所述控制部件还包括在所述电子开关器件阵列和所述接触元件两者之上形成的一个或多个绝缘层;以及穿过所述一个或多个绝缘层的既提供电子开关器件和像素电极阵列的相应的像素电极之间的导电互连(a),又提供所述接触元件和所述光学介质部件的所述公共电极之间的一个或多个导电互连(b)的导电连接。
根据一个实施例,所述控制部件包括:处于所述一个或多个绝缘层之上的图案化的导电材料的上层,其中,所述导电材料的上层提供:所述像素电极阵列;所述导电互连(a);所述一个或多个导电互连(b);以及与所述像素电极阵列共平面但是与所述像素电极阵列电隔离的导电元件。
在此还提供了一种显示装置,其包括如上文所述的控制部件和层压至所述控制部件的光学介质部件;以及插入到所述导电元件和所述光学介质部件的公共电极之间的导电垫和/或导电粘合剂。
根据一个实施例,所述控制部件包括处于所述一个或多个绝缘层之上的导电粘合剂材料的上层,其中,所述导电粘合剂材料的上层提供:所述一个或多个导电互连(b);以及与所述像素电极阵列共平面但是与所述像素电极阵列电隔离的导电元件。
在此还提供了一种显示装置,其包括如上文所述的控制部件和层压至所述控制部件的光学介质部件;以及插入到所述导电元件和所述光学介质部件的公共电极之间的导电垫。
在下文中将参考附图仅通过举例的方式描述本发明的实施例,在附图中:
图1和图2示出了根据本发明的实施例的技术;以及
参考图1和2,根据本发明的实施例涉及包括控制背面34和光学介质正面32的显示装置的制造。控制背面34包括用于控制相应的像素电极16处的电位的TFT的阵列。所述光学介质部件包括(例如)光学有源层18,可以通过切换像素电极16处的电位使所述光学有源层18的光学特性在至少两个状态之间切换。例如,所述光学有源层可以是液晶层或者电子墨水层。为简单起见,图1仅示出了处于一个维度内的三个TFT和像素电极,但是显示装置通常包括数百万的TFT和像素电极,以提供高分辨率显示。
所述制造过程涉及在衬底2上淀积诸如金的导体材料层,并通过(例如)光刻或激光烧蚀来图案化所述导体材料层,以形成:交错的源电极和漏电极4、6的对;连接相应行的TFT的源电极的寻址线(未示出);以及与光学介质正面32的公共电极20进行电接触(ECON)的接触部分24,如下文所讨论的。之后,在图案化的导电层之上淀积半导体沟道材料层,并通过例如激光烧蚀对其进行图案化,以形成半导体材料岛8,从而为每一源/漏电极对提供半导体沟道。之后,在整个导电层(包括接触部分24)和半导体岛8之上淀积一种或多种有机聚合物介电材料的层10,所述材料具有优选低于大约5GPa(更优选不大于大约3.2GPa)的低杨氏模量。在介电层10之上淀积诸如金的第二导电材料层,并对其进行图案化以形成栅极线12,所述栅极线中的每个形成相应列的TFT的栅电极。之后,在介电层10和栅极线12之上淀积有机聚合物绝缘材料36的上层,所述材料36也具有优选低于大约5GPa的低杨氏模量。材料的杨氏模量被定义为在胡克定律适用的范围内沿某一轴的应力与沿该轴的应变的比值。其可以由在对材料样本实施的拉伸测试中建立的应变-应力曲线的斜率实验确定。
接下来,通过例如激光烧蚀对有机介电层10和有机绝缘层36的组合进行图案化,以形成:(a)通孔38的阵列,每一通孔均向下延伸至相应TFT的漏电极6;以及(b)多个相异的通孔40,其向下延伸至电接触。之后,在图案化的有机绝缘层36之上淀积导体材料,以填充通孔38和40(由此形成导电互连14、26)两者,并形成在有机绝缘层36上延伸的另外的连续的导体层。之后通过(例如)激光烧蚀对该另外的导体层进行图案化,从而(i)定义像素电极16的阵列,每个像素电极导电连接至相应TFT的漏电极6,以及(ii)使接触部分24与像素电极16电隔离。
而后,将光学介质正面32层压到控制背面34。光学介质正面32包括经由公共电极层20支持于基板22上的光学有源层18。公共电极层延伸超过了光学有源层18的边缘。将包括嵌入有金属化纤维和/或金属化球的导电粘合剂的可压缩导电垫30插入到公共电极层20和导电连接至接触部分24(但是与像素电极16电隔离)的上导电层的部分28之间;并且通过对光学介质正面32和控制背面34之间的导电垫30进行压缩而在接触部分24和28之间建立可靠的电连接。根据用于导电垫30的材料,在导电垫30和所述的上导电层部分28之间施加导电胶(或者其他接合促进剂)可以是有效的。替代地,可以将一滴或多滴导电可压缩胶或糊剂以相对较高的精确度淀积到上导电层的所述部分28上而不是导电垫30上。在显示装置的工作过程中,公共电极在整个光学有源层18的反面(opposite side)处提供公共电位,与之相对的,对像素电极16处的电位进行独立地切换。
根据一种变型,不用与用于像素电极16的相同的导体材料填充用于ECON的通孔26。而是在用于填充通孔38以及形成像素电极16的导体材料的淀积过程中遮蔽绝缘层36的处于接触部分24之上的区域;而后以高精确度淀积一滴或多滴导电胶,以填充通孔40,并在绝缘层36的处于接触部分24之上的部分和通孔26之上形成导电胶层。可以将所得到的导电胶的淀积配置为与光学介质正面32的公共电极20直接接触或者经由导电垫接触。在导电垫(或导电胶)的区域内,在上导电层的接触部分28和下导电层的接触部分24之间采用具有低杨氏模量的有机材料有利于避免在将光学介质正面32层压到控制面32的压力下形成裂缝。
因为能够容易地以相对较高的可靠准确度实现贯穿有机介电层10和有机绝缘层36形成通孔40并采用导电材料和/或导电胶液滴的淀积填充通孔40,所以上文描述的技术还有助于减少基板上的用于形成ECON所需的空间。上文所述的技术还避免了(i)以所需的高对准准确度执行介电层10和绝缘层36的淀积,以避免这些层10、26覆盖位于接近于同一层次处的电路的其余部分的接触部分24的困难(或者在淀积之后修整这些层10、36的边缘的低效性),或者(ii)必须将该接触部分24和同一层次处的电路的其余部分之间的距离不利地增大到能够在无需高对准精确度的情况下有选择地而不是在接触部分24之上淀积介电层10和绝缘层36的程度(并由此增大背面34的覆盖区)。
申请人在此公开了文中描述的每一单独的个体特征以及两个或更多这样的特征的任何组合,其公开程度使得这样的特征或组合能够在本说明书的整体的基础上考虑本领域技术人员的公知常识得以实施,而不管这样的特征或特征的组合是否解决了文中描述的问题,并且其也不对权利要求的范围构成限制。申请人指出,本发明的各个方面可以由任何这样的单独特征或者特征的组合构成。考虑到前述说明,本领域技术人员显然将认识到可以在本发明的范围内做出各种修改。
Claims (17)
1.一种在控制部件的接触元件和光学介质部件的公共电极之间建立导电连接的方法,所述方法包括压缩在控制部件和所述光学介质部件之间的可压缩导电部件;其中,所述方法还包括在所述压缩之前在所述接触元件和所述可压缩部件之间插入一个或多个具有低弹性模量的层。
2.根据权利要求1所述的方法,其中,所述一个或多个具有低弹性模量的层包括一个或多个绝缘层,并且所述方法还包括提供贯穿所述接触元件和所述可压缩导电部件之间的所述一个或多个有机层的导电连接。
3.根据权利要求1所述的方法,其中,所述可压缩导电部件是包括嵌入有导电结构的导电粘合剂的垫。
4.根据权利要求1所述的方法,其中,所述可压缩导电部件包括导电糊剂。
5.根据权利要求1到4的任一项所述的方法,其中,所述控制部件包括像素电极的阵列和用于控制所述像素电极的阵列处的电位的电子开关器件的阵列;并且所述一个或多个有机层还起着使所述像素电极与下面的一个或多个导电元件绝缘的作用。
6.根据权利要求5所述的方法,包括贯穿所述一个或多个绝缘层地,形成用于所述电子开关器件和所述像素电极的阵列的相应的像素电极之间的导电连接的通孔(a),以及形成用于所述接触元件和所述光学介质部件的所述公共电极之间的导电连接的一个或多个通孔(b)。
7.根据权利要求6所述的方法,还包括:在所述一个或多个绝缘层的所述上表面上形成分别经由所述通孔(a)和所述一个或多个通孔(b)电连接至所述电子开关器件的阵列和所述接触元件的上导电层;以及对所述上导电层进行图案化,从而定义所述像素电极的阵列,以及定义导电连接至所述接触元件并与所述像素电极阵列电隔离的导电元件。
8.根据权利要求1到7的任一项所述的方法,其中,所述一个或多个具有低弹性模量的层具有低于大约5GPa的杨氏模量。
9.一种用于层压至光学介质部件的控制部件的制造方法,所述控制部件包括像素电极的阵列和用于控制所述像素电极的阵列处的电位的电子开关器件的阵列,以及用于到所述光学介质部件的公共电极的导电连接的接触元件;所述方法包括:在所述电子开关器件的阵列和所述接触元件之上淀积一个或多个绝缘层;以及穿过所述一个或多个绝缘层地,形成用于所述电子开关器件和所述像素电极阵列的相应的像素电极之间的导电连接的通孔(a),以及形成用于所述接触元件和所述光学介质部件的所述公共电极之间的导电连接的一个或多个通孔(b)。
10.根据权利要求9所述的方法,包括:在所述一个或多个绝缘层的所述上表面上形成分别经由所述通孔(a)和所述一个或多个通孔(b)电连接至所述电子开关器件的阵列和所述接触元件的上导电层;以及对所述上导电层进行图案化,从而定义所述像素电极的阵列,以及定义导电连接至所述接触元件并与所述像素电极阵列电隔离的导电元件。
11.一种光学装置制造方法,包括:将光学介质部件层压到根据权利要求10制造的控制部件,其中,所述层压包括在所述导电元件和所述光学介质部件的公共电极之间插入导电垫和/或导电粘合剂。
12.一种光学装置制造方法,包括:在根据权利要求9制造的控制部件的绝缘层的上表面上形成通过所述一个或多个通孔(b)电连接至所述接触元件的导电粘合剂层;以及将光学介质部件层压至所述控制部件,其中,所述层压包括在所述导电粘合剂层和所述光学介质部件的公共电极之间插入导电垫,或者使所述导电粘合剂层与所述光学介质部件的所述公共电极直接接触。
13.一种用于层压至光学介质部件的控制部件,其中,所述控制部件包括像素电极的阵列和用于控制所述像素电极阵列处的电位的电子开关器件的阵列,以及用于到所述光学介质部件的公共电极的导电连接的接触元件;其中,所述控制部件还包括在所述电子开关器件的阵列和所述接触元件两者之上形成的一个或多个绝缘层;以及穿过所述一个或多个绝缘层的导电连接,所述导电连接提供所述电子开关器件和所述像素电极阵列的相应的像素电极之间的导电互连(a),以及提供所述接触元件和所述光学介质部件的所述公共电极之间的一个或多个导电互连(b)。
14.根据权利要求13所述的控制部件,包括:处于所述一个或多个绝缘层之上的图案化的导体材料的上层,其中,所述导体材料的上层提供:所述像素电极的阵列;所述导电互连(a);所述一个或多个导电互连(b);以及与所述像素电极的阵列共面但是与所述像素电极的阵列电隔离的导电元件。
15.一种显示装置,包括根据权利要求14的控制部件和层压至所述控制部件的光学介质部件;以及插入在所述导电元件和所述光学介质部件的公共电极之间的导电垫和/或导电粘合剂。
16.根据权利要求13所述的控制部件,包括处于所述一个或多个绝缘层之上的导电粘合剂材料的上层,其中,所述导电粘合剂材料的上层提供:所述一个或多个导电互连(b);以及与所述像素电极的阵列共面但是与所述像素电极阵列电隔离的导电元件。
17.一种显示装置,包括根据权利要求16的控制部件和层压至所述控制部件的光学介质部件;以及插入在所述导电元件和所述光学介质部件的公共电极之间的导电垫。
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CN (1) | CN104885006B (zh) |
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JP6105459B2 (ja) | 2013-12-17 | 2017-03-29 | 株式会社ジャパンディスプレイ | 液晶表示装置及び電子機器 |
US9576894B2 (en) * | 2015-06-03 | 2017-02-21 | GlobalFoundries, Inc. | Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same |
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JP2000081636A (ja) * | 1998-09-03 | 2000-03-21 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
CN1591145A (zh) * | 2003-08-29 | 2005-03-09 | 精工爱普生株式会社 | 电光装置和电子设备 |
CN1619403A (zh) * | 2003-10-01 | 2005-05-25 | 三星电子株式会社 | 薄膜晶体管阵列面板及包括它的液晶显示器 |
US20070080349A1 (en) * | 2005-05-27 | 2007-04-12 | Sharp Kabushiki Kaisha | Substrate for display device and liquid crystal display device having the same |
US20080024708A1 (en) * | 2006-07-31 | 2008-01-31 | Samsung Electronics Co., Ltd | Liquid crystal display panel and fabricating method thereof |
CN101178524A (zh) * | 2006-11-09 | 2008-05-14 | 三星电子株式会社 | 具有集成触摸面板的lcd |
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US6433841B1 (en) * | 1997-12-19 | 2002-08-13 | Seiko Epson Corporation | Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same |
KR20070048912A (ko) * | 2005-11-07 | 2007-05-10 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR20080003226A (ko) * | 2006-06-30 | 2008-01-07 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
KR101298693B1 (ko) * | 2006-07-19 | 2013-08-21 | 삼성디스플레이 주식회사 | 액정표시패널 및 이의 제조 방법 |
KR101476276B1 (ko) * | 2008-12-02 | 2014-12-31 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR101591476B1 (ko) * | 2009-10-19 | 2016-02-19 | 삼성디스플레이 주식회사 | 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
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JP2000081636A (ja) * | 1998-09-03 | 2000-03-21 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
CN1591145A (zh) * | 2003-08-29 | 2005-03-09 | 精工爱普生株式会社 | 电光装置和电子设备 |
CN1619403A (zh) * | 2003-10-01 | 2005-05-25 | 三星电子株式会社 | 薄膜晶体管阵列面板及包括它的液晶显示器 |
US20070080349A1 (en) * | 2005-05-27 | 2007-04-12 | Sharp Kabushiki Kaisha | Substrate for display device and liquid crystal display device having the same |
US20080024708A1 (en) * | 2006-07-31 | 2008-01-31 | Samsung Electronics Co., Ltd | Liquid crystal display panel and fabricating method thereof |
CN101178524A (zh) * | 2006-11-09 | 2008-05-14 | 三星电子株式会社 | 具有集成触摸面板的lcd |
Also Published As
Publication number | Publication date |
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GB2505175A (en) | 2014-02-26 |
CN104885006B (zh) | 2018-02-23 |
GB2505175B (en) | 2020-02-05 |
US20150206944A1 (en) | 2015-07-23 |
GB201214812D0 (en) | 2012-10-03 |
WO2014029771A1 (en) | 2014-02-27 |
US9627493B2 (en) | 2017-04-18 |
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