CN104883175A - Output circuit suitable for integrated circuit and related control method - Google Patents
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Abstract
Description
技术领域technical field
本发明系关于集成电路的输出电路,尤其是可以稳定输出共模信号的输出电路以及相关的控制方法。The invention relates to an output circuit of an integrated circuit, especially an output circuit capable of stably outputting a common-mode signal and a related control method.
背景技术Background technique
电子产品之间的通讯,可以透过实体的传输线以及特殊通讯规格来达成。许多通讯规格采用了差动信号来通讯,其可以达到相当高的信号传输速度。对于高速通讯而言,传输线往往需要搭配有终端电阻,用来降低信号反射,以增加传输速度。举例来说,终端电阻(terminator)可以设于一接收端集成电路中,连接在一接合垫与一电源线之间。Communication between electronic products can be achieved through physical transmission lines and special communication specifications. Many communication standards use differential signaling for communication, which can achieve a relatively high signal transmission speed. For high-speed communication, transmission lines often need to be equipped with terminal resistors to reduce signal reflection and increase transmission speed. For example, a terminator can be provided in a receiving IC, connected between a bonding pad and a power line.
一般集成电路内的电路架构,依据功能,大致可以分成两类:核心电路(corecircuit)以及输出入电路(input and output circuit)。核心电路负责集成电路内的信号处理或是转换,输出入电路则是作为集成电路与外界电子组件之间通讯的窗口或是桥梁。随着半导体制程的演进以及对于运算速度的需求,核心电路所采用的核心电源电压往往越来越低。但是,输出入电路必须有足够的驱动力以及跟外界电子组件匹配的要求,所以,输出入电路所采用的输出入电源电压往往高于核心电源电压不少。举例来说,输出入电源电压可能维持在3.3V,而核心电源电压则低到0.9V。而当核心电源电压如此低到0.9V时,便发生了许多先前技术中所未知的问题,需要去克服或是解决。Generally, the circuit architecture in integrated circuits can be roughly divided into two categories according to their functions: core circuit and input and output circuit. The core circuit is responsible for signal processing or conversion in the integrated circuit, and the input and output circuits are used as a window or bridge for communication between the integrated circuit and external electronic components. With the evolution of semiconductor manufacturing process and the demand for computing speed, the core power supply voltage used by core circuits is often lower and lower. However, the I/O circuit must have sufficient driving force and matching requirements with external electronic components, so the I/O power supply voltage used by the I/O circuit is often much higher than the core power supply voltage. For example, the input and output supply voltage may be maintained at 3.3V, while the core supply voltage is as low as 0.9V. And when the core power supply voltage is as low as 0.9V, many problems that are unknown in the prior art occur, and need to be overcome or solved.
发明内容Contents of the invention
实施例提供有一种适用于一集成电路的输出电路。该输出电路包含有一驱动器、一前驱动器、以及一缓冲电路。该驱动器电连接至该集成电路外的二输出端以进行讯号输出。该前驱动器用以控制该驱动器,包含串接的一负载以及一输入晶体管。该负载与该输入晶体管之间具有一接点用以控制该驱动器。该缓冲电路依据一内部信号控制该负载以及该输入晶体管。该缓冲电路在控制该输入晶体管关闭之前,先降低该负载的一阻抗以改变该接点的电压。Embodiments provide an output circuit suitable for an integrated circuit. The output circuit includes a driver, a pre-driver, and a buffer circuit. The driver is electrically connected to two output terminals outside the integrated circuit for signal output. The front driver is used to control the driver and includes a load and an input transistor connected in series. There is a contact between the load and the input transistor for controlling the driver. The buffer circuit controls the load and the input transistor according to an internal signal. The buffer circuit lowers an impedance of the load to change the voltage of the contact before controlling the input transistor to turn off.
实施例另提供有一种适用于一集成电路的一输出电路的控制方法。该输出电路包含有信号串流的一前驱动器以及一驱动器。该驱动器用以电连接至该集成电路外的二输出端以进行讯号输出。该前驱动器包含有串接的一负载以及一输入晶体管。该负载与该输入晶体管之间具有一接点电连接至该驱动器。该控制方法包含有:依据一内部信号,降低该负载的一阻抗;以及,于降低该负载的该阻抗后,依据该内部信号,控制该输入晶体管关闭。The embodiment further provides a control method suitable for an output circuit of an integrated circuit. The output circuit includes a pre-driver and a driver with signal streams. The driver is electrically connected to two output terminals outside the integrated circuit for signal output. The front driver includes a load and an input transistor connected in series. A contact between the load and the input transistor is electrically connected to the driver. The control method includes: reducing an impedance of the load according to an internal signal; and controlling the input transistor to turn off according to the internal signal after reducing the impedance of the load.
实施例另提供一种适用于一集成电路的一输出电路的控制方法。该输出电路包含有一驱动器以及一前驱动器。该驱动器用以电连接至该集成电路外的二输出端以进行讯号输出。该前驱动器具有一非反向输出以及一反向输出。该控制方法包含有:依据一内部信号,使该反向输出的一电压开始接近一电源线电压后,使该非反向输出的一电压自该电源线电压开始远离;以及,依据该非反向输出的该电压以及该反向输出的该电压控制该驱动器。该反向输出的该电压开始接近该电源线电压的一时间点,早于该非反向输出的该电压自该电源线电压开始远离的一时间点。The embodiment further provides a control method applicable to an output circuit of an integrated circuit. The output circuit includes a driver and a front driver. The driver is electrically connected to two output terminals outside the integrated circuit for signal output. The front driver has a non-inverting output and an inverting output. The control method includes: according to an internal signal, after making a voltage of the reverse output approach a power line voltage, make a voltage of the non-reverse output start to move away from the power line voltage; and, according to the non-reverse The voltage to the output and the voltage to the inverse output control the driver. A time point at which the voltage of the inverting output begins to approach the power line voltage is earlier than a time point at which the voltage of the non-inverting output begins to diverge from the power line voltage.
附图说明Description of drawings
图1显示一发射端集成电路与一接收端集成电路。FIG. 1 shows a transmitter IC and a receiver IC.
图2显示图1中发射端集成电路的一些信号波形。Figure 2 shows some signal waveforms of the transmitter IC in Figure 1.
图3显示依据本发明的一实施例的输出电路。FIG. 3 shows an output circuit according to an embodiment of the invention.
图4显示图3中的一些信号波形以及时序关系。Figure 4 shows some signal waveforms and timing relationships in Figure 3.
图5显示图3中缓冲电路的另一实施例。FIG. 5 shows another embodiment of the snubber circuit in FIG. 3 .
图6显示图3中前驱动器的另一实施例。FIG. 6 shows another embodiment of the front driver in FIG. 3 .
图7显示依据本发明的另一实施例中的输出电路。FIG. 7 shows an output circuit according to another embodiment of the present invention.
具体实施方式Detailed ways
图1显示一发射端集成电路内的输出电路100透过传输线106N与106P,电连接至一接收端集成电路180。输出电路100有缓冲电路108、前驱动器(pre-driver)102、以及电流模式驱动器(current-mode driver)104。电流模式驱动器104透过发射端集成电路之外的传输线106N与106P,电连接到接收端集成电路180中的两个终端电阻Rdln与Rdlp,而终端电阻Rdln与Rdlp电连接到接收端集成电路180中的输出入电源线VIO-RX,其为3.3V。FIG. 1 shows an output circuit 100 in a transmitter IC electrically connected to a receiver IC 180 through transmission lines 106N and 106P. The output circuit 100 has a buffer circuit 108 , a pre-driver 102 , and a current-mode driver 104 . The current mode driver 104 is electrically connected to the two terminal resistors Rdln and Rdlp in the receiver IC 180 through the transmission lines 106N and 106P outside the transmitter IC, and the terminal resistors Rdln and Rdlp are electrically connected to the receiver IC 180 The output-input power line VIO-RX in, which is 3.3V.
缓冲电路108依据在内部端S-internal上的内部信号VS-internal,在非反向端S-non与反向端S-inv上产生逻辑值大致相反的非反向信号VS-non与反向信号VS-inv。在此说明书,不用于限制本发明的例子中,逻辑1表示一相对高电压,与逻辑1相反的逻辑0表示一相对低电压。According to the internal signal V S- internal on the internal terminal S-internal, the buffer circuit 108 generates non-inverting signals V S-non and Inversion signal V S-inv . In this description, a logic 1 represents a relatively high voltage, and logic 0, which is the opposite of a logic 1, represents a relatively low voltage.
前驱动器102具有两个NMOS晶体管Nnpr以及Nipr、两个负载电阻Rpln与Rplp、以及电流源It-pr。NMOS晶体管Nnpr、负载电阻Rpln以及电流源It-pr串接于核心电源线Vcore(0.9V)与接地线(0V)之间。类似的,NMOS晶体管Nipr、负载电阻Rplp以及电流源It-pr串接于核心电源线Vcore与接地线之间。NMOS晶体管Nnpr与负载电阻Rpln之间的连接点ND-,电连接以控制电流模式驱动器104中的NMOS晶体管Nndr;NMOS晶体管Nipr与负载电阻Rplp之间的连接点ND+,电连接以控制电流模式驱动器104中的NMOS晶体管Nidr。简单的说,NMOS晶体管Nnpr以及Nipr可以切换电流源It-pr的电流It-pr流经负载电阻Rpln或是Rplp,藉此决定连接点ND-与ND+上的信号VND-与VND+。所以,非反向信号VS-non与反向信号VS-inv可以视为二电流切换信号。连接点ND-与ND+可以分别视为前驱动器102的反向输出以及非反向输出。The front driver 102 has two NMOS transistors Nnpr and Nipr, two load resistors Rpln and Rplp, and a current source It-pr. The NMOS transistor Nnpr, the load resistor Rpln and the current source It-pr are connected in series between the core power line Vcore (0.9V) and the ground line (0V). Similarly, the NMOS transistor Nipr, the load resistor Rplp and the current source It-pr are connected in series between the core power line Vcore and the ground line. The connection point ND- between the NMOS transistor Nnpr and the load resistor Rpln is electrically connected to control the NMOS transistor Nndr in the current mode driver 104; the connection point ND+ between the NMOS transistor Nipr and the load resistor Rplp is electrically connected to control the current mode driver NMOS transistor Nidr in 104 . In short, the NMOS transistors Nnpr and Nipr can switch the current It-pr of the current source It- pr to flow through the load resistor Rpln or Rplp, thereby determining the signals V ND- and V ND+ on the connection points ND- and ND+ . Therefore, the non-inversion signal V S-non and the inversion signal V S-inv can be regarded as two current switching signals. The connection points ND− and ND+ can be regarded as the inverting output and the non-inverting output of the front driver 102 respectively.
电流模式驱动器104中的NMOS晶体管Nndr与Nidr,一同电连接到电流源It-dr。类似的,NMOS晶体管Nndr与Nidr可以切换电流源It-dr的电流It-dr流经终端电阻Rdln或Rdlp,藉此决定输出端NO-与NO+上的输出信号VNO-与VNO+。The NMOS transistors Nndr and Nidr in the current mode driver 104 are electrically connected to the current source It-dr. Similarly, the NMOS transistors Nndr and Nidr can switch the current It-dr of the current source It- dr to flow through the terminal resistor Rdln or Rdlp, thereby determining the output signals V NO- and V NO+ on the output terminals NO- and NO+ .
图2显示图1中的一些信号波形。随着非反向信号VS-non与反向信号VS-inv在时间点t1改变了其电压值,也就是改变了其逻辑值,前驱动器102中的信号VND-与VND+开始改变其电压值。这样的改变直到时间点t4才完成。在时间点t2到t3之间的时段中,信号VND-与VND+交越。在图2中,信号VND-与VND+交越于交越电压VND-CROSS。为了有足够的信号摆幅(signal swing),信号VND-与VND+的最低电压值VND-MIN会尽可能的偏低。可预期的,越低的最低电压值VND-MIN,越低的交越电压VND-CROSS。Figure 2 shows some of the signal waveforms in Figure 1. As the non-inversion signal V S-non and the inversion signal V S-inv change their voltage values at time t1, that is, change their logic values, the signals V ND- and V ND+ in the front driver 102 start to change its voltage value. Such a change is not completed until time t4. During the period between time points t2 and t3, the signals V ND− and V ND+ cross. In FIG. 2 , the signals V ND- and V ND+ cross over the crossover voltage V ND-CROSS . In order to have sufficient signal swing, the minimum voltage V ND-MIN of the signals V ND- and V ND+ should be as low as possible. It is expected that the lower the minimum voltage value V ND-MIN , the lower the crossover voltage V ND-CROSS .
请注意,电流模式驱动器104中的电流源It-dr需要有足够的跨压VDROP,来维持电流It-dr为所预期的一个定值。但是,如同图2所示,在时间点t2到t3之间的时段内,因为信号VND-与VND+同时偏低,所以跨压VDROP不足,导致电流It-dr不幸地变小,不再是所预设的一个定值。Please note that the current source It-dr in the current mode driver 104 needs to have enough voltage across V DROP to maintain the current It -dr at a desired constant value. However, as shown in Figure 2, during the period between time points t2 and t3, because the signals V ND- and V ND+ are low at the same time, the cross-voltage V DROP is insufficient, causing the current I t-dr to decrease unfortunately, It is no longer a preset value.
不稳定的电流It-dr,会恶化电磁波干扰(electromagnetic interference,EMI)。在图2中,输出共模信号VCM表示输出信号VNO-与VNO+的平均值。当终端电阻Rdln与Rdlp的电阻值都是RLOAD的固定值时,图1中的输出共模信号VCM的电压大约会是(3.3–0.5*It-dr*RLOAD)伏特。当电流It-dr为一定值时,可以推算出输出共模信号VCM大约也会是一个定电压。但是,当电流It-dr变小,输出共模信号VCM就会增加,如同图2所示。而不稳定的输出共模信号VCM,会制造出较大的电磁波干扰。换言之,信号VND-与VND+同时偏低,也就是交越电压VND-CROSS偏低,将可能导致不良的电磁波干扰。The unstable current I t-dr will worsen electromagnetic interference (EMI). In FIG. 2 , the output common-mode signal V CM represents the average value of the output signals V NO− and V NO+ . When the resistance values of the terminal resistors Rdln and Rdlp are both fixed at R LOAD , the voltage of the output common-mode signal V CM in FIG. 1 will be about (3.3-0.5*I t-dr *R LOAD ) volts. When the current I t-dr is a certain value, it can be deduced that the output common-mode signal V CM will be approximately a constant voltage. However, when the current I t-dr becomes smaller, the output common-mode signal V CM will increase, as shown in Figure 2. However, the unstable output common-mode signal V CM will produce relatively large electromagnetic wave interference. In other words, the signals V ND- and V ND+ are low at the same time, that is, the crossover voltage V ND-CROSS is low, which may cause undesirable electromagnetic wave interference.
图3显示依据本发明所实施的一输出电路200。在一实施例中,输出电路200取代图1中的输出电路100。尽管图3没有显示,在实施例中,输出电路200可以透过图1中的传输线106N与106P,电连接到接收端集成电路180。为了解说上的方便,图3中有许多符号与图1中的符号一样,其所代表的组件、材料、或是物质,为功能上一样或是类似,所以可能不再重述。但本发明不限于此,相同符号的组件,在不同实施例中,可能用不同的电路、材料、或是架构来实施。FIG. 3 shows an output circuit 200 implemented according to the present invention. In one embodiment, the output circuit 200 replaces the output circuit 100 in FIG. 1 . Although not shown in FIG. 3 , in an embodiment, the output circuit 200 can be electrically connected to the receiver integrated circuit 180 through the transmission lines 106N and 106P in FIG. 1 . For the convenience of explanation, many symbols in FIG. 3 are the same as those in FIG. 1 , and the components, materials, or substances represented by them are functionally the same or similar, so they may not be repeated here. But the present invention is not limited thereto, components with the same symbol may be implemented with different circuits, materials, or structures in different embodiments.
在图3中,缓冲电路208提供信号给前驱动器202,前驱动器202提供信号给电流模式驱动器104。所以缓冲电路208、前驱动器202、以及电流模式驱动器104形成一信号串流(cascode)架构。In FIG. 3 , buffer circuit 208 provides a signal to pre-driver 202 , which provides a signal to current mode driver 104 . Therefore, the buffer circuit 208, the pre-driver 202, and the current mode driver 104 form a signal cascode structure.
相较于图1中的前驱动器102,图3中的前驱动器202多了PMOS晶体管Ppln以及Pplp。并联的PMOS晶体管Ppln与负载电阻Rpln构成了一个负载Ln;并联的PMOS晶体管Pplp与负载电阻Rplp构成了另一个负载Lp。PMOS晶体管Ppln与Pplp分别有控制端S-CHG+以及S-CHG-,其上分别有负载控制信号VS-CHG+以及VS-CHG-。Compared with the front driver 102 in FIG. 1 , the front driver 202 in FIG. 3 has more PMOS transistors Ppln and Pplp. The parallel-connected PMOS transistor Ppln and the load resistor Rpln form a load Ln; the parallel-connected PMOS transistor Pplp and the load resistor Rplp form another load Lp. The PMOS transistors Ppln and Pplp respectively have control terminals S-CHG+ and S-CHG-, on which load control signals V S-CHG+ and V S-CHG- are respectively provided.
相较于图1中的缓冲电路108,图3中的缓冲电路208额外地电连接到控制端S-CHG+以及S-CHG-。从缓冲电路208的电路连接可知,负载控制信号VS-CHG+与VS-CHG-,都是内部端S-internal上的内部信号VS-internal经延迟所产生,只是负载控制信号VS-CHG+与VS-CHG-的逻辑值相反。换言之,当负载控制信号VS-CHG+位于逻辑1的一高电压时,负载控制信号VS-CHG-将位于逻辑0的一低电压。类似的,非反向信号VS-non与反向信号VS-inv分别是负载控制信号VS-CHG-与VS-CHG+经延迟所产生,因此非反向信号VS-non与反向信号VS-inv的逻辑值相反。Compared with the buffer circuit 108 in FIG. 1 , the buffer circuit 208 in FIG. 3 is additionally electrically connected to the control terminals S-CHG+ and S-CHG-. It can be seen from the circuit connection of the buffer circuit 208 that the load control signals V S-CHG+ and V S-CHG- are both generated by delaying the internal signal V S- internal on the internal terminal S-internal, and only the load control signal V S- CHG+ is the logical opposite of VS-CHG- . In other words, when the load control signal V S-CHG+ is at a high voltage of logic 1, the load control signal V S-CHG- will be at a low voltage of logic 0. Similarly, the non-inversion signal V S-non and the inversion signal V S-inv are generated by delaying the load control signals V S-CHG- and V S-CHG+ respectively, so the non-inversion signal V S-non and the inversion Inverse to the logic value of signal V S-inv .
图4显示图3中的一些信号波形以及时序关系。在图4中,内部信号VS-internal到负载控制信号VS-CHG+与VS-CHG-之间的信号延迟时间,大约都是Td1;负载控制信号VS-CHG-或VS-CHG+到非反向信号VS-non或反向信号VS-inv之间的信号延迟时间,大约都是Td2。可推知的,内部信号VS-internal到非反向信号VS-non或反向信号VS-inv之间的信号延迟时间,大约会是Td1+Td2。Figure 4 shows some signal waveforms and timing relationships in Figure 3. In Figure 4, the signal delay time between the internal signal V S-internal and the load control signal V S-CHG+ and V S-CHG- is about Td 1 ; the load control signal V S-CHG- or V S- The signal delay time between CHG+ and the non-inversion signal V S-non or the inversion signal V S-inv is about Td 2 . It can be deduced that the signal delay time between the internal signal V S-internal and the non-inverted signal V S-non or the inverted signal V S-inv is about Td 1 +Td 2 .
在时间点t0之前,非反向信号VS-non与反向信号VS-inv分别位于一低电压(逻辑0)与一高电压(逻辑1),所以几乎全部的电流It-pr都会流经NMOS晶体管Nipr,因此信号VND+在一低电压,而信号VND-在一高电压,如同图4所示。Before the time point t0, the non-inversion signal V S-non and the inversion signal V S-inv are respectively at a low voltage (logic 0) and a high voltage (logic 1), so almost all the current I t-pr will be It flows through the NMOS transistor Nipr, so the signal V ND+ is at a low voltage, and the signal V ND- is at a high voltage, as shown in FIG. 4 .
如同图4所示,于时间点t0,内部信号VS-internal从一低电压(逻辑0),变成一高电压(逻辑1)。As shown in FIG. 4 , at the time point t0 , the internal signal V S-internal changes from a low voltage (logic 0) to a high voltage (logic 1).
经过信号延迟时间Td1后的时间点t01,负载控制信号VS-CHG+与VS-CHG-开始变化。负载控制信号VS-CHG+的电压变大,PMOS晶体管Ppln的通道阻抗增高,所以负载Ln的阻抗增加。相反的,负载控制信号VS-CHG-的电压变小,所以负载Lp的阻抗减少。在时间点t01,因为本来就几乎没有电流流经NMOS晶体管Nnpr与负载Ln,因此,负载Ln的阻抗增加并不会影响到信号VND-,其依然维持在一高电压,譬如说核心电源线Vcore的0.9V。在时间点t01,因为几乎所有的电流It-pr都流经负载Lp,所以负载Lp的阻抗减少将会拉高信号VND+的电压,使其开始往0.9V逼近,如同图4所示。At the time point t01 after the signal delay time Td1, the load control signals V S-CHG+ and V S-CHG- start to change. The voltage of the load control signal V S-CHG+ increases, and the channel impedance of the PMOS transistor Ppln increases, so the impedance of the load Ln increases. Conversely, the voltage of the load control signal V S-CHG- decreases, so the impedance of the load Lp decreases. At time point t01, since there is almost no current flowing through the NMOS transistor Nnpr and the load Ln, the increase in the impedance of the load Ln will not affect the signal V ND- , which remains at a high voltage, such as the core power line 0.9V for Vcore. At time point t01, since almost all of the current I t-pr flows through the load Lp, the decrease in the impedance of the load Lp will pull up the voltage of the signal V ND+ , making it start to approach 0.9V, as shown in FIG. 4 .
再经过信号延迟时间Td2后的时间点t1,非反向信号VS-non与反向信号VS-inv开始变化。此时,NMOS晶体管Nnpr的阻抗减少,而NMOS晶体管Nipr的阻抗增加。电流It-pr开始从流经负载Lp,被切换成流经负载Ln。因此,信号VND-从0.9V开始下降,信号VND+维持上升趋势或是维持在0.9V。At time point t1 after the signal delay time Td 2 , the non-inversion signal V S-non and the inversion signal V S-inv start to change. At this time, the impedance of the NMOS transistor Nnpr decreases, while the impedance of the NMOS transistor Nipr increases. The current I t-pr is switched from flowing through the load Lp to flowing through the load Ln. Therefore, the signal V ND- begins to drop from 0.9V, and the signal V ND+ maintains an upward trend or remains at 0.9V.
负载控制信号VS-CHG-与VS-CHG+等同于两个前馈信号(feed-forward signal),在NMOS晶体管Nnpr与Nipr的阻抗改变之前的时间点t01,就预先改变负载Lp与Ln的阻抗。如同图4所示,这样前馈的结果,使得信号ND+在时间点t01就开始上升,而信号ND-在时间点t1才开始下降。The load control signals V S-CHG- and V S-CHG+ are equivalent to two feed-forward signals. At time t01 before the impedances of the NMOS transistors Nnpr and Nipr change, the loads Lp and Ln are changed in advance. impedance. As shown in FIG. 4 , as a result of such feedforward, the signal ND+ starts to rise at the time point t01 , and the signal ND- starts to fall at the time point t1 .
图4中的一些虚线,复制了图2中的信号VND+、电流It-dr、以及输出共模信号VCM,以作为比较。在图3以及图4的实施例中,因为信号VND+在时间点t01就开始上升了,所以信号VND+与VND-的交越电压VND-CROSS-NEW,将会比起图2中的交越电压VND-CROSS来的高。只要设计的适当,较高的交越电压VND-CROSS-NEW可以保证图3中的电流源It-dr有足够的跨压VDROP,来维持电流It-dr以及输出共模信号VCM为固定值,如同图4所示。换言之,图3的实施例,可以改善图1中,因为输出共模信号VCM不稳定所造成的电磁波干扰问题。Some dotted lines in FIG. 4 reproduce the signal V ND+ , the current I t-dr , and the output common-mode signal V CM in FIG. 2 for comparison. In the embodiment shown in FIG. 3 and FIG. 4, since the signal V ND+ starts to rise at the time point t01, the crossover voltage V ND-CROSS-NEW of the signal V ND+ and V ND- will be compared with that in FIG. 2 The crossover voltage V ND-CROSS comes high. As long as the design is proper, the higher crossover voltage V ND-CROSS-NEW can ensure that the current source It-dr in Figure 3 has enough cross-voltage V DROP to maintain the current It -dr and output the common-mode signal V CM is a fixed value, as shown in Figure 4. In other words, the embodiment of FIG. 3 can improve the electromagnetic wave interference problem caused by the unstable output common-mode signal V CM in FIG. 1 .
从图3与图4的说明也可以推知,当内部信号VS-internal从逻辑1的一高电压,变成逻辑0的一低电压时,信号VND-开始上升的时间点,会早于信号VND+开始下降的时间点,所以可以得到一个较高的交越电压。一样可以稳定电流It-dr以及输出共模信号VCM。It can also be deduced from the illustrations in FIG. 3 and FIG. 4 that when the internal signal V S-internal changes from a high voltage of logic 1 to a low voltage of logic 0, the time point when the signal V ND- begins to rise will be earlier than The time point when the signal V ND+ starts to fall, so a higher crossover voltage can be obtained. It can also stabilize the current I t-dr and output the common mode signal V CM .
在图3中,非反向信号VS-non是以延迟负载控制信号VS-CHG-来产生,但本发明并不限于此。图5显示另一个缓冲电路208a,在一些实施例中,可以取代缓冲电路208。在图5中,非反向信号VS-non是以延迟负载控制信号VS-CHG+来产生,而反向信号VS-inv是以延迟负载控制信号VS-CHG-来产生。In FIG. 3 , the non-inversion signal V S-non is generated by the delayed load control signal V S-CHG- , but the invention is not limited thereto. FIG. 5 shows another buffer circuit 208a, which may replace buffer circuit 208 in some embodiments. In FIG. 5 , the non-inverting signal V S-non is generated by the delayed load control signal V S-CHG+ , and the inverted signal V S-inv is generated by the delayed load control signal V S-CHG- .
图6显示另一个前驱动器202a,在一些实施例中,可以用以取代图3中的前驱动器202。相较于图3中的前驱动器202,图6中的前驱动器202a以NMOS晶体管Npln与Nplp来改变负载Lna与Lpa的阻抗。图4也可以用来说明图6中的一些信号波形。图6中前驱动器202a,可以改善电磁波干扰问题。FIG. 6 shows another front driver 202a, which may be used to replace the front driver 202 in FIG. 3 in some embodiments. Compared with the front driver 202 in FIG. 3 , the front driver 202 a in FIG. 6 uses NMOS transistors Npln and Nplp to change the impedances of the loads Lna and Lpa. Figure 4 can also be used to illustrate some of the signal waveforms in Figure 6. The front driver 202a in FIG. 6 can improve the problem of electromagnetic wave interference.
先前所举例的输出电路都是以NMOS晶体管作为电流切换开关,譬如说,图1中的NMOS晶体管Nnpr与Nipr就是二电流切换开关。但是,本发明并不限于此。图7显示依据本发明的另一实施例中的输出电路400,其中使用许多PMOS晶体管作为电流切换开关。图7的操作原理与改善电磁干扰的成效,可以参考先前的说明得知,故不再累述。当然,在一些实施例中,图7中用来改变负载阻抗的NMOS晶体管,也可以改采用PMOS晶体管来实施。The output circuits exemplified above all use NMOS transistors as current switching switches. For example, the NMOS transistors Nnpr and Nipr in FIG. 1 are two current switching switches. However, the present invention is not limited thereto. FIG. 7 shows an output circuit 400 according to another embodiment of the present invention, in which many PMOS transistors are used as current switching switches. The operation principle of FIG. 7 and the effect of improving electromagnetic interference can be known by referring to the previous description, so it will not be repeated here. Of course, in some embodiments, the NMOS transistor used to change the load impedance in FIG. 7 can also be implemented by using a PMOS transistor instead.
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070057702A1 (en) * | 2005-09-13 | 2007-03-15 | Nec Electronics Corporation | Output buffer circuit |
CN101510772A (en) * | 2009-03-19 | 2009-08-19 | 智原科技股份有限公司 | Output/input circuit with small area |
US20090267818A1 (en) * | 2008-04-24 | 2009-10-29 | William George John Schofield | Low distortion current switch |
CN102487278A (en) * | 2010-12-01 | 2012-06-06 | 晨星软件研发(深圳)有限公司 | Low-leakage I/O circuits and related devices |
CN103383416A (en) * | 2012-05-04 | 2013-11-06 | 南亚科技股份有限公司 | Circuit and method for testing impedance of off-chip driver |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070057702A1 (en) * | 2005-09-13 | 2007-03-15 | Nec Electronics Corporation | Output buffer circuit |
US20090267818A1 (en) * | 2008-04-24 | 2009-10-29 | William George John Schofield | Low distortion current switch |
CN101510772A (en) * | 2009-03-19 | 2009-08-19 | 智原科技股份有限公司 | Output/input circuit with small area |
CN102487278A (en) * | 2010-12-01 | 2012-06-06 | 晨星软件研发(深圳)有限公司 | Low-leakage I/O circuits and related devices |
CN103383416A (en) * | 2012-05-04 | 2013-11-06 | 南亚科技股份有限公司 | Circuit and method for testing impedance of off-chip driver |
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