CN104882655B - The millimeter waveguide combining amplifier structure of productibility and uniformity can be improved - Google Patents
The millimeter waveguide combining amplifier structure of productibility and uniformity can be improved Download PDFInfo
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- CN104882655B CN104882655B CN201510217647.4A CN201510217647A CN104882655B CN 104882655 B CN104882655 B CN 104882655B CN 201510217647 A CN201510217647 A CN 201510217647A CN 104882655 B CN104882655 B CN 104882655B
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- epicoele
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- resorption
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Abstract
The invention discloses the millimeter waveguide combining amplifier structure that can improve productibility and uniformity, including epicoele and cavity of resorption, input waveguide is installed in the cavity of epicoele, input waveguide is connected by transition line with the input of MMIC circuits, and the output end of MMIC circuits is connected by transition line with output waveguide；Epicoele and cavity of resorption are full symmetric structure, to being combined；The input waveguide and the edge of output waveguide connected with transition line is into periodic waveform.Using cavity body structure substitution epicoele, pad, the cavity of resorption of two symmetrical structures.Compared to three-decker, two symmetrical cavity body structures remove intermediate washer, and coincideing, required precision is low, and productibility is good.The dieelctric sheet extruded without pad will not deformed damaged, emulation and actual goodness of fit height, consistent reliability also greatly improves.Pad and the medium groove structure of cavity formation are destroyed, and will not produce resonance, broadband character is good.
Description
Technical field
The present invention relates to solid-state power amplifier technical field, more particularly to the millimeter of productibility and uniformity can be improved
Sonic wave guide combining amplifier structure.
Background technology
Millimeter Wave Solid State Devices have that DC power is low, reliability is high, circuit structure is compact, size is small and lightweight etc. excellent
Point, thus extremely people's concern, using increasingly extensive.Single solid-state devices power output is due to by itself Semiconductor Physics characteristic
Limitation and do not reach power application much, so the method for carrying out power combing using multiple solid-state devices obtains high power
Output is the hot topic of research.
Two layers of space power synthesis technical scheme based on millimeter waveguide space is small due to size, compact conformation, in milli
Metric wave system is used widely, but needs to be fitted close between three parts, three parts because it contains, and machining accuracy will
High, the low problem of broadband combined coefficient is sought, causes it to be difficult to large-scale production.Based on millimeter waveguide space combination skill
Art is due to the limitation of waveguide mouthful, and millimeter waveguide space power synthesis scheme uses the form of two layers of transmission line, such as Fig. 1-3 institutes
Show, cavity body structure is made up of epicoele 1, pad 3, cavity of resorption 2, and 6 points of MMIC circuits (monolithic integrated microwave circuit) 7 and transition line
Not Zhuan Ru epicoele 1, cavity of resorption 2 separates by pad 3.Needed in its structure between epicoele 1,2 three parts of pad 3 and cavity of resorption close
Coordinate, requirement on machining accuracy is high.Even require that pin docking is accurate to 10 microns in more than 67GHz frequency range.Transition line and chamber
Body, gasket construction it is overlapping when, dieelctric sheet is squeezed yielding so that simulation model and actual conditions grave fault, and clawback is damaged
Consumption deteriorates.The easy resonance of hemi-closure space that medium is surrounded with pad, cavity, causes easily occur serious shake in bandwidth range,
Broadband character is deteriorated.
The content of the invention
The purpose of the present invention is exactly, in order to solve the above problems there is provided a kind of millimeter waveguide combining amplifier, to utilize
The mode of mould waveguide, using the cavity of two symmetrical structures, realizes two-way space power synthesis, relative to two layers of traditional waveguide
Spatial power synthesis amplifier, reduces the pad of centre, reduces the precision of part cooperation, improves producing for amplifier
Property and uniformity.
To achieve these goals, the present invention is adopted the following technical scheme that：
The millimeter waveguide combining amplifier structure of productibility and uniformity, including epicoele and cavity of resorption can be improved, it is described
Input waveguide is installed, the input waveguide is connected by transition line with the input of MMIC circuits, described in the cavity of epicoele
The output end of MMIC circuits is connected by transition line with output waveguide；The epicoele and cavity of resorption are full symmetric structure, pairing
Together；The input waveguide and the edge of output waveguide connected with transition line is into periodic waveform.
The periodic waveform is periodic semi arch.
Energy is respectively coupled on each layer circuit of epicoele and cavity of resorption from input waveguide by transition line, and every layer is passed through MMIC
After circuit amplifies to energy, then each layer transition line of process changes into output waveguide energy synthesis.
Beneficial effects of the present invention：
(1) good reliability：The structure of intermediate washer is eliminated, transition line is difficult to be deformed damaging.
(2) conformity of production is good：The cavity of two valve symmetrical structures replaces original three layers structure, and processing coincide precision will
Ask low, uniformity and productibility are greatly improved.
(3) synthesis delivery efficiency height, insertion loss are small：Using preiodic type waveguiding structure combination transition line, low, synthesis is lost
Efficiency high.
(4) working band is wide：Remove after pad, destruction cavity and the medium groove of pad formation, resonance is difficult in band；Make
With periodic waveguide structure semi, effective broadening bandwidth of operation.
(5) compact conformation, is easy to application：Periodic waveguide transition structure make it that gradual change line length is shorter, and structure can be realized
Shorter size.
(6) reasonably optimizing waveguiding structure, the waveguiding structure connected with transition line uses periodic semi arch structure, excellent
The standing-wave ratio of synthesis power amplifier is changed, insertion loss is outstanding in single grading structure, plays good mode transition.And
Transition line after the optimization size in the case where realizing identical index is greatly reduced, and structure is more compact.
Brief description of the drawings
Fig. 1 illustrates for existing power synthesis amplifier three-decker；
Fig. 2 is existing power synthesis amplifier decomposition texture schematic diagram；
Fig. 3 is the structural representation that existing internal circuit is placed in cavity；
Fig. 4 is cycle semi arch waveguiding structure schematic diagram of the invention；
Fig. 5 is epicoele of the present invention and the structural representation of cavity of resorption intracavitary；
Fig. 6 is power synthesis amplifier decomposition texture schematic diagram of the present invention；
Fig. 7 is the structural representation that internal circuit of the present invention is placed in cavity；
Wherein, 1. epicoele, 2. cavity of resorptions, 3. pads, 4. input waveguides, 5. output waveguides, 6. transition lines, 7.MMIC circuits,
8. periodic semi arch.
Embodiment
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
Such as Fig. 4-5, the millimeter waveguide combining amplifier structure of productibility and uniformity, including the He of epicoele 1 can be improved
Input waveguide 4 is installed, the input waveguide 4 passes through transition line 6 and MMIC circuits 7 in cavity of resorption 2, the cavity of the epicoele 1
Input is connected, and the output end of the MMIC circuits 7 is connected by transition line 6 with output waveguide 5；The epicoele 1 and cavity of resorption 2 are
Full symmetric structure, to being combined；The input waveguide 4 and the edge of output waveguide 5 connected with transition line 6 is into periodic
Waveform.
The periodic waveform is periodic semi arch 8.
Energy is respectively coupled on each layer circuit of epicoele 1 and cavity of resorption 2 from input waveguide 4 by transition line 6, every layer of process
After MMIC circuits 7 amplify to energy, then each layer transition line 6 of process changes into output waveguide 5 energy synthesis.
Using cavity body structure substitution epicoele 1, pad 3, the cavity of resorption 2 of two symmetrical structures.Compared to three-decker, two right
Cavity body structure is claimed to remove intermediate washer 3, coincideing, required precision is low, and productibility is good.The transition line extruded without pad 3 will not be deformed
Damage, emulation and the actual goodness of fit are high, and reliability is also greatly improved.Pad 3 and the medium groove structure of cavity formation are destroyed,
Resonance will not be produced, broadband character is good.Reasonably optimizing waveguiding structure, the waveguiding structure connected with transition line 6 is using periodically
Semi arch structure, optimize the standing-wave ratio of synthesis power amplifier, insertion loss is outstanding in single transition line, play good
Mode transition.And the size in the case where realizing identical index of the transition line after optimizing is greatly reduced, and structure is more compact.Adopt
Productibility can be realized with the method for the present invention and uniformity is good, broadband, high-frequency, efficient millimeter wave synthesis power
Amplifier.
The synthesis power amplification circuit proposed in the present invention, the transition structure used is all cycle semi arch waveguiding structure
Form is combined with transition line, by rational design size and structure, can realize that waveguide is arrived to transition line in broadband
The conversion of waveguide.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, not to present invention protection model
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deform still within protection scope of the present invention that creative work can make.
Claims (3)
1. the millimeter waveguide combining amplifier structure of the uniformity of productibility and simulation model and actual product can be improved, its
Be characterized in, including epicoele and cavity of resorption that input waveguide is installed in the cavity of the epicoele, the input waveguide by transition line with
The input connection of MMIC circuits, the output end of the MMIC circuits is connected by transition line with output waveguide；The epicoele and
Cavity of resorption is full symmetric structure, directly to being combined；The input waveguide and the edge of output waveguide connected with transition line into
Periodic waveform.
2. the millimeter waveguide that can improve the uniformity of productibility and simulation model and actual product as claimed in claim 1 is closed
Into amplifier architecture, it is characterized in that, the periodic waveform is periodic semi arch.
3. the millimeter waveguide that can improve the uniformity of productibility and simulation model and actual product as claimed in claim 1 is closed
Into amplifier architecture, it is characterized in that, energy is respectively coupled to each layer circuit of epicoele and cavity of resorption from input waveguide by transition line
On, every layer is changed into output waveguide energy synthesis after MMIC circuits amplify to energy, then by each layer transition line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217647.4A CN104882655B (en) | 2015-04-30 | 2015-04-30 | The millimeter waveguide combining amplifier structure of productibility and uniformity can be improved |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217647.4A CN104882655B (en) | 2015-04-30 | 2015-04-30 | The millimeter waveguide combining amplifier structure of productibility and uniformity can be improved |
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| Publication Number | Publication Date |
|---|---|
| CN104882655A CN104882655A (en) | 2015-09-02 |
| CN104882655B true CN104882655B (en) | 2017-09-22 |
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| CN201510217647.4A Expired - Fee Related CN104882655B (en) | 2015-04-30 | 2015-04-30 | The millimeter waveguide combining amplifier structure of productibility and uniformity can be improved |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106505285A (en) * | 2016-09-26 | 2017-03-15 | 西安空间无线电技术研究所 | The millimeter wave high reliability light guide module that a kind of preventing RF signal is revealed |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201638920U (en) * | 2009-09-30 | 2010-11-17 | 华南理工大学 | Ka waveband multi-path waveguide space power synthesis amplifier |
| CN102315506A (en) * | 2010-07-06 | 2012-01-11 | 杨健 | Integrated cooling system of high-power amplifier using waveguide space synthesis method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4305382B2 (en) * | 2004-12-27 | 2009-07-29 | 三菱電機株式会社 | High power amplifier |
| US9293801B2 (en) * | 2012-11-26 | 2016-03-22 | Triquint Cw, Inc. | Power combiner |
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2015
- 2015-04-30 CN CN201510217647.4A patent/CN104882655B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201638920U (en) * | 2009-09-30 | 2010-11-17 | 华南理工大学 | Ka waveband multi-path waveguide space power synthesis amplifier |
| CN102315506A (en) * | 2010-07-06 | 2012-01-11 | 杨健 | Integrated cooling system of high-power amplifier using waveguide space synthesis method |
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| CN104882655A (en) | 2015-09-02 |
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Effective date of registration: 20190220 Address after: 266555 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: CHINA ELECTRONICS TECHNOLOGY INSTRUMENTS Co.,Ltd. Address before: 266555 No. 98 Xiangjiang Road, Qingdao economic and Technological Development Zone, Shandong Patentee before: THE 41ST INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. |
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Address after: 266555 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: CLP kesiyi Technology Co.,Ltd. Address before: 266555 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee before: CHINA ELECTRONICS TECHNOLOGY INSTRUMENTS Co.,Ltd. |
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Granted publication date: 20170922 |