CN104882512A - Method for increasing parallel resistance of crystalline silicon battery piece - Google Patents
Method for increasing parallel resistance of crystalline silicon battery piece Download PDFInfo
- Publication number
- CN104882512A CN104882512A CN201410212533.6A CN201410212533A CN104882512A CN 104882512 A CN104882512 A CN 104882512A CN 201410212533 A CN201410212533 A CN 201410212533A CN 104882512 A CN104882512 A CN 104882512A
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- China
- Prior art keywords
- cutting
- parallel resistance
- cell piece
- silicon battery
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 238000005520 cutting process Methods 0.000 claims abstract description 40
- 238000003698 laser cutting Methods 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000011056 performance test Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000007688 edging Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a method for increasing parallel resistance of a crystalline silicon battery piece. The method comprises the step of cutting a low parallel-resistance battery piece according to a set cutting trajectory by using a laser cutting machine. The method has the effects that: 1, the improvement effect is good, the parallel resistance is obviously increased when the low parallel-resistance battery piece is improved by using the method, and the proportion of Rsh>30 omega reaches above 60%; 2, the production efficiency is high; 3, and the power package loss of the improved battery pack is less than 3%.
Description
Technical field: the present invention relates to photovoltaic field, particularly a kind of method improving crystal-silicon battery slice parallel resistance.
Background technology: the existing crystal-silicon battery slice produced have part in use can Yin Qinei parallel resistance (Rsh) < 30 Ω and produce electric leakage, make the electric energy of crystal silicon battery produce loss, reduce the optoelectronic transformation efficiency of crystal silicon battery.The existing crystal-silicon battery slice to parallel resistance (Rsh) < 30 Ω improves, namely the parallel resistance in it is improved, make the method for parallel resistance > 30 Ω in it, mainly contain the means such as manual grinding, the husky edging of Buddha's warrior attendant.Manual grinding is to manually, and use is frustrated cutter class instrument and carried out edge polishing to low parallel resistance cell piece (parallel resistance (Rsh) < 30 Ω, as follows), makes it change into the cell piece of normal parallel resistance; This kind of mode in use deficiency is: production efficiency is low, very easily causes fragment, hiddenly to split, lacks the defect sheets such as limit.The husky edging of Buddha's warrior attendant cell piece is placed in the equipment having Buddha's warrior attendant sand to denude with mechanical motion mode, principle and manual grinding similar, although production efficiency is high, make the reverse low conversion rate of low parallel resistance cell piece.
Summary of the invention: the object of the invention is improving above-mentioned deficiency existing in low parallel resistance cell piece technology used for existing, and propose a kind of resistance that both can improve low parallel resistance cell piece and make it reach standard value, there is again production efficiency high, the method for the raising crystal-silicon battery slice parallel resistance damaging and do not affect its performance can not be caused low parallel resistance cell piece.
By following technical proposals, can realize object of the present invention, a kind of method improving crystal-silicon battery slice parallel resistance, it is characterized in that, it is made up of following steps:
The first step: start laser cutting machine, set cutting parameter and cutting track;
Second step: be placed on laser cutting machine operating platform by low parallel resistance cell piece, opens vacuum valve and is fixed by low parallel resistance cell piece;
3rd step: under nitrogen protection, cuts low parallel resistance cell piece edge by set cutting track;
4th step: close vacuum valve, take off cell piece;
5th step: to cell piece performance test and component power test;
The setting of cutting parameter described in the first step is: cutting current parameter setting values is 6.2 ~ 8.6A; Laser facula size is 0.5mm ~ 0.2mm, and cutting speed is 5 ~ 10mm/s; Described in the first step, cutting track is: single-sided linear divides 4 sections to cut or the square continuous cutting in 4 limits.
Carrying out cutting to cell piece edge described in 3rd step is: cut at cell piece edge with monolateral flute profile formula cutting.
Described in 5th step to cell piece performance test and component power test, employing be Halm tester.
Effect of the present invention is: 1, improve effective, for enterprise reduces loss, improve economic benefit, be not difficult to find out from the test result of table 1 and table 2, by improving low parallel resistance cell piece by this method, parallel resistance promotes obviously, Rsh > 30 Ω ratio reaches more than 60%, this is, this method adopts laser to process low parallel resistance cell piece, and it can not apply mechanical force to cell piece, so, there will not be fragment, hiddenly to split, lack the defect sheets such as limit, thus improve qualification rate; 2, production efficiency is high, because this method adopts is full-automatic mechanical equalization, so it will to be enhanced productivity decades of times than the mode of manual grinding; 3, the battery component power package loss after improvement is low, and encapsulation loss is less than 3%.
Embodiment: specifically describe further the present invention by the following examples, what be necessary to herein means out be following examples is further illustrate of the present invention, instead of limits the scope of the invention.
Embodiment 1:
Randomly draw the sample of 100 low parallel resistance sheets as the present embodiment;
The first step: start laser cutting machine, cutting current parameter setting values is 6.2A, and laser facula size is 0.1mm, and cutting speed is 80mm/s, and cutting track is that single-sided linear divides 4 sections of cuttings;
Second step: low parallel resistance cell piece is placed in laser cutting machine operating platform, opens vacuum valve, fixes low parallel resistance cell piece;
3rd step: under nitrogen protection, cuts with monolateral flute profile formula low parallel resistance cell piece edge by the cutting track of setting;
4th step: close vacuum valve, take off cell piece;
5th step: adopt Halm tester, carry out electric performance test to the cell piece after processing, test result is in table 1; In cell piece after cutting test screen, randomly draw 60, make P60 standard package and test component power with Halm tester, test result is in table 2.
Embodiment 2:
Randomly draw the sample of 100 low parallel resistance sheets as the present embodiment;
The first step: start laser cutting machine, cutting current parameter setting values is 7.6A, and laser facula size is 0.1mm, and cutting speed is 100mm/s, and cutting track is that single-sided linear divides 4 sections of cuttings;
Second step: low parallel resistance crystal silicon solar battery sheet is placed in laser cutting machine operating platform, opens vacuum valve, low parallel resistance cell piece is fixed;
3rd step: under nitrogen protection, cuts with monolateral flute profile formula cell piece edge by the cutting track of setting;
4th step: close vacuum valve, take off cell piece;
5th step: electrical performance of cell test and component power test;
Adopt Halm tester, carry out electric performance test to the cell piece after processing, test result is in table 1; In cell piece after cutting test screen, randomly draw 60, make P60 standard package and test component power with Halm tester, test result is in table 2.
Embodiment 3:
Randomly draw the sample of 100 low parallel resistance sheets as the present embodiment;
The first step: start laser cutting machine, cutting current parameter setting values is 8.5A, and laser facula size is 0.1mm, and cutting speed is 100mm/s, and cutting track is the 4 square continuous cuttings in limit;
Second step: low parallel resistance crystal silicon solar battery sheet is placed in laser cutting machine operating platform, opens vacuum valve, low parallel resistance cell piece is fixed;
3rd step: under nitrogen protection, cuts with monolateral flute profile formula cell piece edge by the cutting track of setting;
4th step: close vacuum valve, take off cell piece;
5th step: electrical performance of cell test and component power test;
Adopt Halm tester, carry out electric performance test to the cell piece after processing, test result is in table 1; In cell piece after cutting test screen, randomly draw 60, make P60 standard package and test component power with Halm tester, test result is in table 2.
Table 1: the unit for electrical property parameters of embodiment 1 ~ 3 gained sample and Rsh > 30 Ω ratio.
Table 2: embodiment 1 ~ 3 gained sample makes P60 standard package power and encapsulation loss.
Claims (4)
1. improve a method for crystal-silicon battery slice parallel resistance, it is characterized in that, it is made up of following steps:
The first step: start laser cutting machine, set cutting parameter and cutting track;
Second step: be placed on laser cutting machine operating platform by low parallel resistance cell piece, opens vacuum valve and is fixed by low parallel resistance cell piece;
3rd step: under nitrogen protection, cuts low parallel resistance cell piece edge by set cutting track;
4th step: close vacuum valve, take off cell piece;
5th step: to cell piece performance test and component power test.
2. by a kind of method improving crystal-silicon battery slice parallel resistance according to claim 1, it is characterized in that, the setting of cutting parameter described in the first step is: cutting current parameter setting values is 6.2 ~ 8.6A; Laser facula size is 0.5mm ~ 0.2mm, and cutting speed is 5 ~ 10mm/s; Described in the first step, cutting track is: single-sided linear divides 4 sections to cut or the square continuous cutting in 4 limits.
3. by a kind of method improving crystal-silicon battery slice parallel resistance according to claim 1, it is characterized in that, carrying out cutting to cell piece edge described in the 3rd step is: cut at cell piece edge with monolateral flute profile formula cutting.
4., by a kind of method improving crystal-silicon battery slice parallel resistance described in claim 1 or 2 or 3, it is characterized in that, described in the 5th step to cell piece performance test and component power test, employing be Halm tester.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410212533.6A CN104882512A (en) | 2014-05-12 | 2014-05-12 | Method for increasing parallel resistance of crystalline silicon battery piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410212533.6A CN104882512A (en) | 2014-05-12 | 2014-05-12 | Method for increasing parallel resistance of crystalline silicon battery piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104882512A true CN104882512A (en) | 2015-09-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410212533.6A Pending CN104882512A (en) | 2014-05-12 | 2014-05-12 | Method for increasing parallel resistance of crystalline silicon battery piece |
Country Status (1)
| Country | Link |
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| CN (1) | CN104882512A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599726A (en) * | 2018-04-23 | 2018-09-28 | 西北核技术研究所 | Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method |
| CN113976484A (en) * | 2021-12-28 | 2022-01-28 | 南京日托光伏新能源有限公司 | Grading electric leakage screening method for solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102034903A (en) * | 2010-11-09 | 2011-04-27 | 苏州矽美仕绿色新能源有限公司 | Method for treating electric leakage of surface of silicon solar battery |
-
2014
- 2014-05-12 CN CN201410212533.6A patent/CN104882512A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102034903A (en) * | 2010-11-09 | 2011-04-27 | 苏州矽美仕绿色新能源有限公司 | Method for treating electric leakage of surface of silicon solar battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599726A (en) * | 2018-04-23 | 2018-09-28 | 西北核技术研究所 | Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method |
| CN108599726B (en) * | 2018-04-23 | 2019-05-03 | 西北核技术研究所 | Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method |
| CN113976484A (en) * | 2021-12-28 | 2022-01-28 | 南京日托光伏新能源有限公司 | Grading electric leakage screening method for solar cell |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20150902 |