CN108599726B - Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method - Google Patents
Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method Download PDFInfo
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- 238000004458 analytical method Methods 0.000 title claims abstract description 19
- 230000006378 damage Effects 0.000 title claims abstract description 14
- 230000003595 spectral effect Effects 0.000 claims abstract description 15
- 238000005259 measurement Methods 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- 206010061245 Internal injury Diseases 0.000 abstract description 2
- 238000004445 quantitative analysis Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 39
- 238000000034 method Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The present invention provides a kind of both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis methods, to solve the problems, such as that existing analysis method cannot achieve sub- PN junction performance quantitative analysis.The dark spectral response and external quantum efficiency for obtaining formula stacked solar cell, cascade solar cell in both ends to be studied first are composed, then it establishes the system of linear equations of sub- PN junction parallel resistance and it is solved, analyze each sub- PN junction parallel resistance situation of change in damage from laser front and back, in conjunction with its contacting with PN junction physical quantity inside, both ends formula stacked solar cell, cascade solar cell internal injury is analyzed.
Description
Technical field
The present invention relates to a kind of both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis methods.
Background technique
Both ends formula stacked solar cell, cascade solar cell is a kind of efficient solar battery, is by by the single junction cell of several different materials
It is connected in series, to realize the efficient utilization of solar spectrum, improves its transfer efficiency.
There are mainly two types of the methods that both ends formula stacked solar cell, cascade solar cell damage from laser situation is analyzed and evaluated at present:
The first: it is defeated to be calculated open-circuit voltage, short circuit current, maximum using I-V characteristic of the device under illumination condition
The parameters such as power and fill factor out, so that device performance degree of impairment be analyzed and evaluated；
Second: using means such as quantum efficiency spectrum, electroluminescence spectrums, analyzing sub- PN junction performance change situation, and then right
The rapid wear characteristic of sub- PN junction carries out qualitative analysis.2014, appoints and climb et al. through this two kinds of means, realize the three knot GaAs sun
Rapid wear specificity analysis under the sub- PN junction high temperature of battery, referring to document, " Ren Pan, Wu Lingyuan, Wang Weiping wait high temperature to lead to three knots too
Positive electricity pond electroluminescence spectrum changes [J] laser and optoelectronics progress, 2014,51 (12): 121602. (REN Pan, WU
Lingyuan,WANG Weiping.Change of Electroluminescence Spectra of Solar Cells
Caused by Heating[J].Laser&Optoelectronics Progress.2014,51(12):121602.)”。
Above method has certain deficiency: first method can not analyze the performance of sub- PN junction；Second of side
Method although available sub- PN junction rapid wear characteristic, but it can not be quantitatively described.
Summary of the invention
The present invention is intended to provide a kind of both ends formula stacked solar cell, cascade solar cell laser-induced damage based on dark spectral response point
Analysis method can be used for carrying out calculating analysis to the sub- PN junction parallel resistance of device before and after laser irradiation, to solve existing analysis method
The problem of cannot achieve sub- PN junction performance quantitative analysis.
Basic principle design of the invention is:
The dark spectral response and quantum efficiency for obtaining formula stacked solar cell, cascade solar cell in both ends to be studied first are composed, and sub- PN is then established
It ties the system of linear equations of parallel resistance and it is solved, each sub- PN junction parallel resistance situation of change before and after analysis damage from laser, knot
Its contacting with PN junction physical quantity inside is closed, both ends formula stacked solar cell, cascade solar cell internal injury is analyzed.
The technical solution of the invention is as follows:
Both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method provided by the invention, is characterized in that, packet
Include following steps:
1) before and after measurement laser irradiation, dark spectral response characteristic in the sub- PN junction absorption bands of both ends formula stacked solar cell, cascade solar cell；
The dark spectral response characteristic includes peak response open-circuit voltage, peak response short circuit current and corresponding dark quantum efficiency；
Before and after setting laser irradiation, peak response open-circuit voltage is respectively ViAnd Vi', peak response short circuit current be respectively
IiAnd Ii', corresponding dark quantum efficiency is DEQEiAnd DEQEi′；
Wherein, i represents the serial number of sub- PN junction, i=1, and 2, n；
2) before and after measurement laser irradiation, maximum external quantum efficiency in the sub- PN junction absorption bands of both ends formula stacked solar cell, cascade solar cell,
It is denoted as EQE respectivelyiAnd EQEi′；
3) measurement result in step 1) and step 2) is combined, according to following formula, is established before and after laser irradiation respectively, sub- PN junction is simultaneously
Join the system of linear equations of resistance, specific as follows:
4) sub- PN junction parallel resistance solution vector R after predose is obtained by the equations of step 3)sh={ Rsh,1,
Rsh,2..., Rsh,nAnd Rsh'={ Rsh,1', Rsh,2' ..., Rsh,n′}；
5) sub- PN junction parallel resistance value after predose that step 4) obtains is compared, obtains laser irradiation rear and front end
Anyon PN junction performance change in formula stacked solar cell, cascade solar cell.
Further, performance change judgment criterion is in step 5) described above:
RshThen defect density is reduced to increase, on the contrary RshIncrease then defect density to reduce.
Further, dark spectral response refers to the photoelectric respone size under monochromatic light irradiation, if response short circuit current is
ISC, incident intensity Q, dark spectral response be DSR, h be Planck's constant, q is electron charge, λ is incident monochromatic wavelength, secretly
Quantum efficiency expression are as follows:
Beneficial effects of the present invention:
The method of the present invention is simple, principle is reliable, realizes laser irradiation rear and front end formula stacked solar cell, cascade solar cell neutron PN junction
The acquisition of parallel resistance, by comparison predose after sub- PN junction parallel resistance size, can be to PN junction after damage from laser inside
The analysis of defect density situation of change, to realize the quantitative description of solar cell PN junction rapid wear characteristic eventually.
Detailed description of the invention
Fig. 1 is flow chart of the invention；
Fig. 2 is that formula stacked solar cell, cascade solar cell half-light in both ends composes response theory；
Fig. 3 is the dark quantum efficiency of three-junction solar battery before and after laser irradiation；
Fig. 4 is three-junction solar battery external quantum efficiency before and after laser irradiation；
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and specific embodiments.
Referring to Fig. 1, the both ends formula stacked solar cell, cascade solar cell laser-induced damage provided by the present invention based on dark spectral response
Analysis method specifically includes the following steps:
Step 1: before and after measurement laser irradiation, dark spectral response characteristic in the sub- PN junction absorption bands of three-junction solar battery, note
Peak response open-circuit voltage is respectively ViAnd Vi', peak response short circuit current is respectively IiAnd Ii', corresponding dark quantum efficiency is
DEQEiAnd DEQEi', wherein i represents the serial number of sub- PN junction, i=1, and 2,3；Measurement result is referring to Fig. 3；
Step 2: before and after measurement laser irradiation, maximum external quantum efficiency in the sub- PN junction absorption bands of three-junction solar battery, point
EQE is not denoted as itiAnd EQEi', measurement result participates in Fig. 4；
Step 3: in conjunction with measurement result in step 1 and step 2, being based on dark spectral response output principle, establish laser respectively
After predose, the system of linear equations of sub- PN junction parallel resistance is specific as follows:
Note: the foundation of equation group depends on the size relation between EQE and DEQE.As EQE > DEQE, show to measure
Output electric current when DEQE is smaller, i.e., is tested battery photovoltage and open-circuit voltage sizableness at this time；When EQE=DEQE ≠ 0
When, output electric current is larger when showing to measure DEQE, i.e., is tested sub- PN junction photovoltage at this time and is less than its open-circuit voltage, therefore is approximate
Think half when its size is open circuit；As EQE=DEQE=0, show to be tested sub- PN junction entirely ineffective, it is small to be equivalent to one
Resistance takes 10 Ω herein.
Step 4: sub- PN junction parallel resistance solution vector R after obtaining predose is solved by step 3sh={ Rsh,1, Rsh,2,
Rsh,3And Rsh'={ Rsh,1', Rsh,2', Rsh,3′}；
Step 5: sub- PN junction parallel resistance value after predose that step 4) obtains being compared, before and after obtaining laser irradiation
Anyon PN junction performance change in three-junction solar battery.
In the present embodiment, laser-induced damage analysis has been carried out to three-junction solar battery sample using method of the invention,
Result is analyzed referring to table 1.
Table 1
(note: increase after the irradiation of middle battery parallel resistance be due to measurement accuracy not enough caused by deviation, but its magnitude is become
Change does not have an impact.)
R after comparison predosesh,iVariation discovery, Rsh,1There is the reduction of nearly 3 magnitudes, shows that pushing up inside battery lacks
It falls into and increases；Rsh,2With Rsh,3Do not occur the variation in magnitude, show in, bottom cell performance degradation it is unobvious.
Theoretical foundation of the invention:
1, ideal PN junction diode current-voltage correlation formula are as follows:
In formula, V is diode both end voltage, and n is Diode Ideality Factor, IsFor diode reverse saturation current, IDFor stream
Through diode current；kBFor Boltzmann constant, T is environment temperature, and q is electronic charge.
Relationship between the output Current Voltage of both ends formula stacked solar cell, cascade solar cell and each sub- PN junction Current Voltage are as follows:
Iout=Ii,
Wherein IoutWith VoutThe respectively output electric current and voltage of both ends formula stacked solar cell, cascade solar cell, IiWith ViRespectively i-th
The output electric current and voltage of sub- PN junction.
2, dark measurement of spectral response principle and physical meaning:
The both ends dark spectral response of formula stacked solar cell, cascade solar cell refers to its photoelectric respone size under monochromatic light irradiation.It is general
By the response short circuit current I of deviceSCIts dark spectral response (DSR), dark quantum efficiency are defined as with the ratio of incident intensity Q
(DEQE) expression formula is as follows:
Wherein h is Planck's constant, and q is electron charge, and λ is incident monochromatic wavelength.Response current physical meaning is explained
It is as follows:
When a monochromic beam is incident on both ends formula stacked solar cell, cascade solar cell surface, then some matched son can be absorbed wherein
Photovoltage V is generated in PN junctioni, due to the additional zero-bias of device at this time, will lead to that generate one at remaining PN junction both ends big
Small and ViEqual reverse biased, thus generate conducting electric current and be output to device both ends, size ISC(referring to attached drawing 2), then
ViWith ISCRatio be in reverse-biased under the conditions of sub- PN junction parallel resistance the sum of series connection.Therefore, by battery half-light
Spectrum response voltage ViWith response current ISCThe measurement of two parameter can realize the analysis of sub- PN junction parallel resistance.
3, PN junction parallel resistance RshFor a circuit level equivalent parameters, for analyzing PN junction leakage current, including PN junction
The leakage current of internal leakage current and knot edge.
The generation of leakage current is mainly derived from the recombination current inside PN junction, and the power and defect density of recombination current
It is positively correlated.Defect density is bigger, then it is stronger to correspond to complex effect, causes photogenerated current to reduce, is equivalent to parallel resistance RshDrop
It is low.Therefore pass through analysis equivalent parallel resistance RshVariation, defect density situation of change in PN junction can be obtained.
Claims (3)
1. a kind of both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method, which comprises the following steps:
1) before and after measurement laser irradiation, dark spectral response characteristic in the sub- PN junction absorption bands of both ends formula stacked solar cell, cascade solar cell；It is described
Dark spectral response characteristic includes peak response open-circuit voltage, peak response short circuit current and corresponding dark quantum efficiency；
Before and after setting laser irradiation, peak response open-circuit voltage is respectively ViAnd Vi', peak response short circuit current be respectively IiWith
Ii', corresponding dark quantum efficiency is DEQEiAnd DEQEi′；
Wherein, i represents the serial number of sub- PN junction, i=1, and 2, n；
2) before and after measurement laser irradiation, maximum external quantum efficiency in the sub- PN junction absorption bands of both ends formula stacked solar cell, cascade solar cell, respectively
It is denoted as EQEiAnd EQEi′；
3) measurement result in step 1) and step 2) is combined, according to following formula, is established before and after laser irradiation respectively, sub- PN junction electricity in parallel
The system of linear equations of resistance, specific as follows:
4) sub- PN junction parallel resistance solution vector R after predose is obtained by the equations of step 3)sh={ Rsh,1, Rsh,2...,
Rsh,nAnd Rsh'={ Rsh,1', Rsh,2' ..., Rsh,n′}；
5) sub- PN junction parallel resistance value after predose that step 4) obtains is compared, it is folded obtains laser irradiation rear and front end formula
Anyon PN junction performance change in layer solar cell.
2. both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method according to claim 1, it is characterised in that: described
Performance change judgment criterion is in step 5):
RshThen defect density is reduced to increase, on the contrary RshIncrease then defect density to reduce.
3. both ends formula stacked solar cell, cascade solar cell laser-induced damage analysis method according to claim 1, it is characterised in that: half-light
Spectrum response refers to the photoelectric respone size under monochromatic light irradiation, if response short circuit current is ISC, incident intensity Q, half-light spectrum
Response be DSR, h be Planck's constant, q is electron charge, λ is incident monochromatic wavelength, dark quantum efficiency expression are as follows:
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564013A (en) * | 2004-04-22 | 2005-01-12 | 上海交通大学 | Testing method for effective diffusion length of solar cell |
| CN102866163A (en) * | 2012-09-06 | 2013-01-09 | 中国科学院上海光学精密机械研究所 | Apparatus and method for detecting laser injury |
| CN104882512A (en) * | 2014-05-12 | 2015-09-02 | 江西瑞晶太阳能科技有限公司 | Method for increasing parallel resistance of crystalline silicon battery piece |
| JP2016149890A (en) * | 2015-02-13 | 2016-08-18 | 国立研究開発法人産業技術総合研究所 | Evaluation method and evaluation device for solar cell |
| CN107290637A (en) * | 2017-06-09 | 2017-10-24 | 西北核技术研究所 | Single PN kink type device laser-induced damage analysis method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564013A (en) * | 2004-04-22 | 2005-01-12 | 上海交通大学 | Testing method for effective diffusion length of solar cell |
| CN102866163A (en) * | 2012-09-06 | 2013-01-09 | 中国科学院上海光学精密机械研究所 | Apparatus and method for detecting laser injury |
| CN104882512A (en) * | 2014-05-12 | 2015-09-02 | 江西瑞晶太阳能科技有限公司 | Method for increasing parallel resistance of crystalline silicon battery piece |
| JP2016149890A (en) * | 2015-02-13 | 2016-08-18 | 国立研究開発法人産業技術総合研究所 | Evaluation method and evaluation device for solar cell |
| CN107290637A (en) * | 2017-06-09 | 2017-10-24 | 西北核技术研究所 | Single PN kink type device laser-induced damage analysis method |
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