CN104882499A - 一种热伏电池 - Google Patents

一种热伏电池 Download PDF

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CN104882499A
CN104882499A CN201510255671.7A CN201510255671A CN104882499A CN 104882499 A CN104882499 A CN 104882499A CN 201510255671 A CN201510255671 A CN 201510255671A CN 104882499 A CN104882499 A CN 104882499A
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娄朝刚
李晓剑
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Southeast University
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Abstract

本发明公开了一种热伏电池，包括电池基本单元，所述电池基本单元为PN结，所述PN结设置在柔性或非柔性衬底上，所述PN结的材料为窄禁带宽度半导体，可选用有机或无机半导体材料，所述PN结上设置有正负极以及偏压电极；还包括储电装置，正负极与储电装置相连并向储电装置充电，储电装置同时连接到偏压电极对热伏电池提供偏压。由于该热伏电池是以常温下物体所发射出的红外热辐射作为它的热辐射源，因此，该热伏电池可以在常温的任何环境中工作，不受环境条件的限制，相比需要太阳光的光伏电池和专门辐射源的热伏电池，本发明中的电池可以应用的场合要广泛得多。

Description

一种热伏电池
技术领域
本发明涉及电池领域，特别是一种热伏电池。
背景技术
热伏电池是指将热源发射的红外辐射通过半导体PN结直接转换成电能的技术。目前所用的热伏电池大多需要专门的热辐射源，只能工作在数百摄氏度的高温环境中。这导致热伏系统结构比较复杂，而且只能应用于一些特殊场合。而传统的光伏电池则需要太阳光的照射。在夜晚或者无光的环境中，光伏电池无法工作。这限制了他们的应用场合。
根据黑体理论，任何物体在绝对零度以上都会以红外线的形式向外辐射能量。随着温度的升高，物体辐射的能量越大。由于在常温下这些红外线中单个光子的能量很低，通常在0.1电子伏特左右，普通的光伏电池无法吸收。如果能够采用一些窄禁带宽度的半导体材料来制作电池，则有可能将这些随处都有的辐射能量利用起来发电。
发明内容
发明目的：为了克服现有技术中存在的不足，本发明提供一种热伏电池，解决现有的热伏电池或光伏电池在常温无光照的条件下无法工作的技术问题。
技术方案：为实现上述目的，本发明采用的技术方案为：
一种热伏电池，包括电池基本单元，所述电池基本单元为PN结，所述PN结设置在柔性或非柔性衬底上，所述PN结的材料为窄禁带宽度半导体，可选用有机或无机半导体材料，所述PN结上设置有正负极以及偏压电极；还包括储电装置，正负极与储电装置相连并向储电装置充电，储电装置同时连接到偏压电极对热伏电池提供偏压。
利用窄禁带宽度半导体能够吸收常温下红外光线中的能量通过光生伏特效应转化为电能的特性从而制备出电池，同时，由于窄禁带半导体材料制作的PN结中靠载流子扩散形成的自建电场的电压较小，造成在空间电荷区被激发出来的载流子的漂移速度较低和复合几率较高，从而影响电池的输出功率，因此利用偏压电极增强PN结内部的自建电场，提高载流子的漂移速度，使得制备出的电池具有足够多的有效载流子。
进一步的，在本发明中，还包括控制器，所述控制器检测储电装置内的电容量以及热伏电池的负载，并根据检测结果控制充放电。控制器用来检测储电装置的电量和负载情况，并根据检测结果来选择向储电装置充电或直接输出到负载。当检测到没有负载且储电装置内未饱和时，控制器控制将热伏电池中的电能转移到储电装置中，直至最终达到平衡状态；当检测到有负载时，根据负载功率大小，控制器控制偏压电压的大小从而改变电池的输出功率，并将热伏电池的输出功率合理分配至供应负载和储电装置；当储电装置的电量下降到一定阈值时，控制器自动切换到向储电装置充电，保证热伏电池上的偏压足够大。
进一步的，在本发明中，PN结的两个端面，其中一个端面制备有减反射薄膜、另一个端面制备有增反射薄膜。减反射薄膜可以降低红外线在表面的反射，而增反射薄膜则可以降低红外线的透射，提高能量转化效率。
进一步的，在本发明中，设置多个电池基本单元，且电池基本单元依次串联后组成叠层电池，通过一对正负极输出。这样设置可以增加对红外线的吸收，且有利于提高电池的输出电压，提高电池的输出功率。
进一步的，在本发明中，热伏电池在使用时，还可以将多个热伏电池串联后输出。这样设置一方面提高了电池整体的输出功率，另一方面提高电池对红外线的吸收能力。
有益效果：
本发明的热伏电池能够在常温无光照环境中工作，不需外加高温辐射源和光照，能够将周围环境辐射出的红外线通过光生伏特效应转化为电能。由于该热伏电池是以常温下物体所发射出的红外热辐射作为它的热辐射源，因此，该热伏电池可以在常温的任何环境中工作，不受环境条件的限制，相比需要太阳光的光伏电池和专门辐射源的热伏电池，本发明中的电池可以应用的场合要广泛得多。
附图说明
图1为热伏电池的结构与电路连接示意图。
具体实施方式
下面结合附图对本发明作更进一步的说明。
如图1所示为一种热伏电池，包括电池基本单元和电路连接，所述电池基本单元为PN结，包括位于上方的P型区2和位于下方的N型区3，所述PN结设置在其下方的衬底4上，所述PN结的材料为窄禁带宽度半导体，PN结的上表面制备有减反射薄膜，下表面制备有增反射薄膜，这两种薄膜的生长技术有：电子束蒸发镀膜、真空蒸发镀膜、磁控溅射镀膜、化学气相沉积、液相反应沉积等；所述PN结上设置有正负极以及偏压电极，所述正负极包括位于P型区2上方的电池正极1和位于N型区3下方的电池负极5，所述偏压电极包括位于P型区2上方的偏压负极6和位于N型区3下方的偏压正极7，偏压电极通过偏压电极介质层8与PN结连接；还包括储电装置9，所述储电装置9为蓄电池或电容并且由控制器10控制，并连接正负极和偏压电极，所述控制器10检测储电装置9内的电容量以及热伏电池的负载，并根据检测结果控制充放电。
制备时，可将多个电池基本单元制成叠层电池通过一对正负极输出。使用时，可以将多个热伏电池串联后输出。这样都可以增加电池输出功率和对红外线的吸收。
下面的实施例中列举了本装置的制备过程。
实施例1
1、选取玻璃为衬底4，在衬底4上表面制备电池负极5和偏压正极7；
2、在上述电池负极5和偏压正极7上面采用分子束外延的方法制备碲镉汞PN结；
3、采用掩膜光刻和热蒸发的方法在PN结上表面制备电池正极1和偏压负极6；
4、采用磁控溅射的方法在PN结上表面制备减反射薄膜；
5、储电装置9采用蓄电池。
实施例2
1、选取聚酰亚胺薄膜为柔性衬底4，在衬底4上表面制备电池负极5和偏压正极7；
2、在上述电池负极5和偏压正极7上面采用化学气相沉积的方法制备碲镉汞PN结；
3、采用掩膜光刻和热蒸发的方法在PN结上表面制备电池正极1和偏压负极6；
4、采用热蒸发的方法在PN结上表面制备减反射薄膜。
5、储电装置9采用电容器。
实施例3
1、选取导电的氮化铝薄片为衬底4，在衬底4下表面制备电池负极5和偏压正极7；
2、在衬底4上表面采用热蒸发的方法制备有机半导体PN结；
3、采用掩膜光刻和热蒸发的方法在PN结上表面制备电池正极1和偏压负极6；
4、采用热蒸发的方法在PN结上表面制备减反射薄膜。
5、储电装置9采用电容器。
实施例4
1、选取硅片为衬底4，在衬底4下表面制备电池负极5和偏压正极7；
2、在衬底4上表面采用分子束外延的方法制备一个无机半导体PN结；
3、在PN结上表面用分子束外延的方法制备一个同样的PN结；
4、重复步骤3，制备多个PN结形成依次累加的形式；
5、在最上面的PN结上表面采用掩膜光刻和热蒸发的方法制备电池正极1和偏压负极6；
6、采用热蒸发的方法在最上面的PN结上表面制备减反射薄膜。
7、储电装置9采用电容器。
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (5)

1.一种热伏电池，其特征在于：包括电池基本单元，所述电池基本单元为PN结，所述PN结设置在衬底(4)上且PN结包括P区(2)和N区(3)，所述PN结的材料为窄禁带宽度半导体，所述PN结的P区(2)上设置有电池正极(1)和偏压负极(6)，所述PN结的N区(3)上设置有电池负极(5)和偏压正极(7)，且偏压负极(6)和偏压正极(7)分别通过偏压介质层(8)与PN结的相应侧连接；还包括储电装置(9)，电池正极(1)和电池负极(5)均与储电装置(9)相连并向储电装置(9)充电，储电装置(9)同时连接到偏压负极(6)和偏压正极(7)对热伏电池提供偏压。
2.根据权利要求1所述的热伏电池，其特征在于：还包括控制器(10)，所述控制器(10)检测储电装置(9)内的电容量以及热伏电池的负载，并根据检测结果控制充放电。
3.根据权利要求1或2所述的热伏电池，其特征在于：PN结的两个端面，其中一个端面制备有减反射薄膜、另一个端面制备有增反射薄膜。
4.根据权利要求1或2所述的热伏电池，其特征在于：设置多个电池基本单元，且电池基本单元依次串联后通过一对电池正极(1)和电池负极(5)输出。
5.权利要求1所述的热伏电池的使用方法，其特征在于：将多个热伏电池串联后输出。
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