CN201749863U - 一种砷化铟红外光伏电池 - Google Patents

一种砷化铟红外光伏电池 Download PDF

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CN201749863U
CN201749863U CN2010201497339U CN201020149733U CN201749863U CN 201749863 U CN201749863 U CN 201749863U CN 2010201497339 U CN2010201497339 U CN 2010201497339U CN 201020149733 U CN201020149733 U CN 201020149733U CN 201749863 U CN201749863 U CN 201749863U
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邓惠勇
王奇伟
吴杰
胡淑红
郭少令
陈鑫
戴宁
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Shanghai Institute of Technical Physics of CAS
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Abstract

本专利公开了一种砷化铟红外光伏电池，该电池包括非掺杂n型InAs单晶衬底，在衬底上外延p型InAs单晶薄膜，蒸镀在p型薄膜表面的栅状Au前电极，以及蒸镀在衬底背面的全覆盖的Au背电极。p型InAs外延薄膜采用液相外延的方法制备，溶剂为In，溶质为InAs，掺杂剂为Zn。电极采用离子束溅射的方法制备。本专利的优点是：可以用作转换1～3μm波长范围的太阳辐射的太阳电池，拓宽了太阳电池的光谱利用范围，也可以用作转换热源温度为1000～3000K的热光伏器件；其次本实用新型结构简单，电池参数可以很容易通过调节工艺参数控制，制备成本低。

Description

一种砷化铟红外光伏电池 
技术领域
本专利涉及薄膜太阳电池及热光伏器件，特别是指一种可以用作转换1～3μm波长范围的太阳辐射的太阳电池，拓宽了太阳电池的光谱利用范围，也可以用作转换热源温度为1000～3000K的热光伏器件。 
背景技术
太阳能具有取之不尽、无污染的优点，是解决未来能源短缺与环境污染的理想能源，各国政府均把发展太阳能作为一种战略部署。然而，目前太阳电池发电的成本约为传统的电力的8倍(约5元/千瓦时)，这限制了其推广应用。太阳电池的发电成本居高不下主要与二个因素有关，其一是高质量的原材料供不应求，其二与其光电转换效率低(约为12％)有关，特别是对于军事装备、航空、航天等军事与空间应用领域，光电转换效率是太阳能电池最重要的指标。为了提高光电转换效率，人们作了不懈的努力来提高电池的制备技术和优化器件的参数，但每提高一个百分点都不容易，其根本原因是任何单一半导体材料的光电响应频带范围相对于太阳光谱来说都太窄，只有用几种不同禁带宽度的材料分别响应光谱的高、中、低频区，并叠加它们的效应，才可能大幅度提高太阳能电池的光电转换效率。目前，太阳能电池(如Si、GaAs、CdTe、InGaAs等)主要是转换太阳辐射能量的可见光和很窄的近红外部分，大部分的红外光无法转换成电能，而红外光能量约占太阳辐射总能量的43％，因此，若能够将太阳辐射中的大部分红外光转换成电能，这对提高太阳能电池的效率是很有意义的。 
热光伏电池是一种转换热辐射的器件，与太阳电池的原理相同，只是辐射源不同。与太阳电池相比，具有不受天气的影响的优势，是太阳电池的有益补充。由于热源辐射的峰值波长主要由热源的温度决定，它们之间的关系可由维恩位移定律来确定，即λ·T＝2898(μm·K)，因此，根据热源的温度不同，热光伏电池应选择不同禁带宽度的半导体材料。 
InAs是一种可工作于室温的优良红外材料，室温下其禁带宽度为0.35eV，对应截止波长为3.5μm，因此，InAs光伏电池可转换1～3μm波长范围的太阳辐射的太阳电池，拓宽了太阳电池的光谱利用范围，也可以用作转换热源温度为1000～3000K的理想热光伏器件。 
发明内容
本专利的目的是提供一种红外光伏电池及制备方法，可以用作转换1～3μm波长范围的太阳辐射的太阳电池，拓宽太阳电池的光谱利用范围，也可以用作转换热源温度为1000～3000K的热光伏器件。 
本专利的InAs红外光伏电池，包括：Au背电极、n型非故意掺杂衬底、Zn掺杂p型外延层与栅状Au前电极，其特征在于： 
p型外延层的厚度1～3μm； 
栅状Au前电极的覆盖面积为5～20％。 
本专利的InAs红外光伏电池的p型薄膜采用水平滑移的液相外延方法制备，其特征在于： 
采用过冷冷却的方法制备p型薄膜，饱和溶液的过冷度为10～15℃； 
溶液均匀温度高于生长温度25～35℃，降温速率为0.3～0.4℃/min。 
本专利的InAs红外光伏电池的Au电极采用离子束溅射的方法制备，其特征在于： 
电极材料为Au，厚度为30～50nm。 
本专利的优点是： 
1.可以用作转换1～3μm波长范围的太阳辐射的太阳电池，拓宽了太阳电池的光谱利用范围，也可以用作转换热源温度为1000～3000K的热光伏器件。 
2.本专利结构简单，电池参数可以很容易通过调节工艺参数控制，制备成本低。 
附图说明
图1为本专利的InAs红外光伏电池的结构示意图。 
图2为p型InAs薄膜的X射线衍射图。 
图3为实施例的InAs红外光伏电池在AM1.5光照条件下的J-V曲线，其中插图为电池的暗J-V曲线。 
具体实施方式
下面结合附图和实施例，对本专利的具体实施方式作进一步的详细说明： 
衬底的清洗与溶液的配制：称量高纯In(7N)3.65365g，InAs单晶(5N)0.13124g，高纯Zn(7N)0.00551g。将10ml超净水倒入10ml盐酸(MOS级)，用该溶液清洗In与Zn约1分钟；将6ml硝酸(MOS级)倒入10ml双氧水(MOS级)，用该配比的溶液分别清洗InAs衬底与原料约70秒。然后分别用大量的超净水冲洗，接着分别用无水乙醇(MOS级)漂洗2次，最后用氮气吹干待用。 
p型薄膜的液相外延制备：将InAs单晶衬底放入石墨舟的衬底槽，将原料(高纯In、InAs单晶与高纯Zn)放入母液槽，然后采用过冷冷却工艺外延生长p型薄膜。均匀化时间约为1小时，饱和溶液的过冷度约为15℃，降温速率约为0.4℃/min，生长时间约为3分钟。 
见图2，X射线衍射图谱表明，制备的薄膜为(100)取向的单晶薄膜，很高的衍射强度与窄的半高宽表明薄膜的晶体质量很好。 
电极的制备：采用离子束溅射的方法蒸镀Au电极，溅射电流为30mA，溅射速率约为0.2nm/秒，电极的厚度为50nm。其中前电极为栅状，电极的覆盖面积约为20％。 
见图3，无光照条件下的I-V测试表明，室温下薄膜呈现出典型的窄带隙半导体p-n结的特性。AM1.5条件下的测试表明电池的开路电压为2.8mV，短路电流密度为1.5mA/cm2。 

Claims (1)

1.一种砷化铟红外光伏电池，包括：背电极(1)、衬底(2)、p型外延层(3)与栅状前电极(4)，其特征在于：所述的p型外延层(3)的InAs厚度为1～3μm；所述的背电极(1)与栅状前电极(4)所用的电极材料为Au，厚度为30～50nm；所述的栅状前电极(4)的覆盖面积为5～20％。 
CN2010201497339U 2010-04-02 2010-04-02 一种砷化铟红外光伏电池 Expired - Fee Related CN201749863U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882499A (zh) * 2015-05-19 2015-09-02 东南大学 一种热伏电池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882499A (zh) * 2015-05-19 2015-09-02 东南大学 一种热伏电池

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