CN104882421A - IGBT device heat dissipation structure - Google Patents
IGBT device heat dissipation structure Download PDFInfo
- Publication number
- CN104882421A CN104882421A CN201410073570.3A CN201410073570A CN104882421A CN 104882421 A CN104882421 A CN 104882421A CN 201410073570 A CN201410073570 A CN 201410073570A CN 104882421 A CN104882421 A CN 104882421A
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- CN
- China
- Prior art keywords
- base plate
- radiator structure
- igbt device
- substrate
- igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses an IGBT device heat dissipation structure arranged in an IGBT device; the IGBT device comprises a substrate, and an IGBT chip arranged on the substrate; the IGBT device also comprises a base plate; the substrate is arranged on the heat dissipation structure through the base plate; the heat dissipation structure is provided with a plurality of grooves on a surface opposite to the base plate; the base plate is provided with a plurality of projections matching the plurality of grooves; when the base plate matches the heat dissipation structure, the plurality of projections are accommodated in the grooves. When the size of the IGBT device is fixed, the heat dissipation structure of the IGBT device possesses good heat dissipation effects, guarantees product reliability, stability and security, and prolongs the service life of a product.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of radiator structure of IGBT device.
Background technology
Along with the high speed development of China's economic, the field such as high ferro, subway, urban track traffic, wind-powered electricity generation, solar energy, clean energy resource is all at development, and in these areas, IGBT module is widely used in the inverter in these fields.Meanwhile, due to progress and the development of science and technology, high technology content, baroque convertor assembly division of labor based on specialization be extremely strong, be more tending towards modularization.So large-scale modular member is produced, and requires high to IGBT module in homogeneity of product and reliability etc.IGBT module generally comprises base plate and radiator structure, wherein above-mentioned base plate and the steady operation role of radiator structure to module particularly important, but IGBT module is in order to meet the demands such as standardization, its length and width size normally remains unchanged, therefore under the requirement of fixed dimension, base plate and the radiator structure of large-size cannot be adopted, thus improve that product radiating effect then becomes very difficult.
Summary of the invention
In view of this, the invention provides a kind of radiator structure of IGBT device, with the problem that the radiator structure radiating effect overcoming existing IGBT device is not good.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
A kind of radiator structure of IGBT device, it is arranged in IGBT device, described IGBT device comprises substrate, the igbt chip be arranged on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, the surface that described radiator structure is relative with described base plate is provided with some grooves, described base plate is provided with the some projections with described some fit depressions, when described base plate matches with described radiator structure, described some projections are contained in described groove.
As a further improvement on the present invention, described some grooves are cone tank, and described some projections are the tapered protrusion that shape matches with described cone tank.
As a further improvement on the present invention, described some grooves equidistantly and be set in parallel in the surface of described radiator structure.
As a further improvement on the present invention, described substrate is DBC plate, and described igbt chip is welded on described DBC plate by solder.
As a further improvement on the present invention, heat-conducting silicone grease is provided with between described base plate and described radiator structure.
As a further improvement on the present invention, the bottom surface of described groove is arcwall face, and described some grooves with arcwall face form waveform configuration.
For achieving the above object, the present invention also provides a kind of radiator structure of IGBT device, it is arranged in IGBT device, described IGBT device comprises substrate, be arranged at the igbt chip on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, the surface that described radiator structure is relative with described base plate is provided with some blind holes, described base plate is provided with the some projections matched with described some blind holes, when described base plate matches with described radiator structure, described some projections are contained in described blind hole.
Compared with prior art, the invention has the beneficial effects as follows: the radiator structure of IGBT device of the present invention is when IGBT device size is fixing, there is good radiating effect, ensure that the reliability of product, stability and fail safe, extend the useful life of product simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the planar structure schematic diagram of radiator structure one embodiment of IGBT device of the present invention;
Fig. 2 is the planar structure schematic diagram of another embodiment of radiator structure of IGBT device of the present invention;
Fig. 3 is the planar structure schematic diagram of the radiator structure embodiment again of IGBT device of the present invention.
Embodiment
The present invention discloses a kind of radiator structure of IGBT device, it is arranged in IGBT device, described IGBT device comprises substrate, the igbt chip be arranged on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, the surface that described radiator structure is relative with described base plate is provided with some grooves, described base plate is provided with the some projections with described some fit depressions, when described base plate matches with described radiator structure, described some projections are contained in described groove.
As a further improvement on the present invention, described some grooves are cone tank, and described some projections are the tapered protrusion that shape matches with described cone tank.
As a further improvement on the present invention, described some grooves equidistantly and be set in parallel in the surface of described radiator structure.
As a further improvement on the present invention, described substrate is DBC plate, and described igbt chip is welded on described DBC plate by solder.
As a further improvement on the present invention, heat-conducting silicone grease is provided with between described base plate and described radiator structure.
As a further improvement on the present invention, the bottom surface of described groove is arcwall face, and described some grooves with arcwall face form waveform configuration.
The present invention also discloses the radiator structure of another kind of IGBT device under identical inventive concept, it is arranged in IGBT device, described IGBT device comprises substrate, be arranged at the igbt chip on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, the surface that described radiator structure is relative with described base plate is provided with some blind holes, described base plate is provided with the some projections matched with described some blind holes, when described base plate matches with described radiator structure, described some projections are contained in described blind hole.
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
As shown in Figure 1, the radiator structure 40 of IGBT device of the present invention is arranged in IGBT device, and this IGBT device comprises substrate 10 and is arranged at the igbt chip 20 on substrate 10.Particularly, above-mentioned igbt chip 20 is welded on substrate 10 by solder, and in present embodiment, aforesaid substrate 10 is DBC plate.Above-mentioned IGBT device also comprises base plate 30, and aforesaid substrate 10 is arranged on radiator structure 40 by base plate 30, thus the heat that igbt chip 20 produces is passed on radiator structure 40 by substrate 10, base plate 30 successively, and is distributed by radiator structure 40.
Further, the surface that above-mentioned radiator structure 40 is relative with base plate 30 is provided with some grooves 401, base plate 30 is provided with match with above-mentioned some grooves 401 some protruding 301.Thus, so arrange, between base plate 30 and radiator structure 40, there is larger contact area, thus increase the area of dissipation of radiator structure 40, improve the effect of heat radiation.In order to make base plate 30 can firmly be connected with radiator structure 40, between above-mentioned base plate 30 and radiator structure 40, be also provided with heat-conducting silicone grease.
Coordinate with reference to shown in Fig. 2, particularly, above-mentioned some grooves 401 are cone tank, and preferably, above-mentioned some cone tanks are equidistantly parallel to the surface of above-mentioned radiator structure 40.As a kind of alternate embodiments of equivalence, the bottom surface of above-mentioned some grooves 401 is arcwall face, and above-mentioned some grooves 401 with arcwall face form waveform configuration.Above-mentioned waveform configuration specifically refers to that above-mentioned some grooves 401 are in the arrangement of height relief form, and namely the junction of above-mentioned two adjacent grooves 401 forms crest, forms trough bottom arcwall face.Correspondingly, above-mentioned base plate 30 is provided with the arc convex 301 matched with the above-mentioned groove 401 with arcwall face.
As shown in Figure 3, conceive based on foregoing invention, the present invention also provides a kind of radiator structure 204 of IGBT device, it is arranged in IGBT device, this IGBT device comprises: substrate 201, the igbt chip 202 be arranged on substrate 201, above-mentioned IGBT device also comprises base plate 203, and wherein, substrate 201 is arranged on radiator structure 204 by base plate 203.Further, the surface that radiator structure 204 is relative with base plate 203 is provided with some blind holes 2041, and base plate 203 is provided with match with above-mentioned some blind holes 2041 some protruding 2031, when above-mentioned base plate 203 matches with radiator structure 204, some protruding 2031 are correspondingly contained in blind hole 2041.So, the contact area between base plate and radiator structure can be increased equally, and then increase the area of dissipation of radiator structure, improve radiating effect.
In sum, the radiator structure of IGBT device of the present invention, when IGBT device size is fixing, has good radiating effect, ensure that the reliability of product, stability and fail safe, extend the useful life of product simultaneously.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through suitable conjunction, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (7)
1. the radiator structure of an IGBT device, it is arranged in IGBT device, described IGBT device comprises substrate, the igbt chip be arranged on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, it is characterized in that, the surface that described radiator structure is relative with described base plate is provided with some grooves, described base plate is provided with the some projections with described some fit depressions, when described base plate matches with described radiator structure, described some projections are contained in described groove.
2. the radiator structure of IGBT device according to claim 1, is characterized in that, described some grooves are cone tank, and described some projections are the tapered protrusion that shape matches with described cone tank.
3. the radiator structure of IGBT device according to claim 1, is characterized in that, described some grooves equidistantly and be set in parallel in the surface of described radiator structure.
4. the radiator structure of IGBT device according to claim 1, is characterized in that, described substrate is DBC plate, and described igbt chip is welded on described DBC plate by solder.
5. the radiator structure of IGBT device according to claim 1, is characterized in that, is provided with heat-conducting silicone grease between described base plate and described radiator structure.
6. the radiator structure of IGBT device according to claim 1, is characterized in that, the bottom surface of described groove is arcwall face, and described some grooves with arcwall face form waveform configuration.
7. the radiator structure of an IGBT device, it is arranged in IGBT device, described IGBT device comprises substrate, the igbt chip be arranged on described substrate, described IGBT device also comprises base plate, described substrate is arranged on described radiator structure by described base plate, it is characterized in that, the surface that described radiator structure is relative with described base plate is provided with some blind holes, described base plate is provided with the some projections matched with described some blind holes, when described base plate matches with described radiator structure, described some projections are contained in described blind hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410073570.3A CN104882421A (en) | 2014-02-28 | 2014-02-28 | IGBT device heat dissipation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410073570.3A CN104882421A (en) | 2014-02-28 | 2014-02-28 | IGBT device heat dissipation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104882421A true CN104882421A (en) | 2015-09-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201410073570.3A Pending CN104882421A (en) | 2014-02-28 | 2014-02-28 | IGBT device heat dissipation structure |
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| CN (1) | CN104882421A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6590123B1 (en) * | 2019-01-10 | 2019-10-16 | 三菱電機株式会社 | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001085877A (en) * | 1999-09-10 | 2001-03-30 | Furukawa Electric Co Ltd:The | Heat sink with heat receiving surface provided with protrusions |
| CN201017875Y (en) * | 2007-03-08 | 2008-02-06 | 洋鑫科技股份有限公司 | Luminous diode heat radiation structure |
| CN101483158A (en) * | 2008-01-07 | 2009-07-15 | 瑞鼎科技股份有限公司 | Chip, chip manufacturing method and chip encapsulation construction |
| CN101990387A (en) * | 2009-07-31 | 2011-03-23 | 鸿富锦精密工业（深圳）有限公司 | Heat sink device |
-
2014
- 2014-02-28 CN CN201410073570.3A patent/CN104882421A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001085877A (en) * | 1999-09-10 | 2001-03-30 | Furukawa Electric Co Ltd:The | Heat sink with heat receiving surface provided with protrusions |
| CN201017875Y (en) * | 2007-03-08 | 2008-02-06 | 洋鑫科技股份有限公司 | Luminous diode heat radiation structure |
| CN101483158A (en) * | 2008-01-07 | 2009-07-15 | 瑞鼎科技股份有限公司 | Chip, chip manufacturing method and chip encapsulation construction |
| CN101990387A (en) * | 2009-07-31 | 2011-03-23 | 鸿富锦精密工业（深圳）有限公司 | Heat sink device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6590123B1 (en) * | 2019-01-10 | 2019-10-16 | 三菱電機株式会社 | Semiconductor device |
| WO2020144814A1 (en) * | 2019-01-10 | 2020-07-16 | 三菱電機株式会社 | Semiconductor device |
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Application publication date: 20150902 |
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