CN104867993A - Inclined evaporation metal contact silicon solar cell and preparation method therefor - Google Patents
Inclined evaporation metal contact silicon solar cell and preparation method therefor Download PDFInfo
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- CN104867993A CN104867993A CN201510247857.8A CN201510247857A CN104867993A CN 104867993 A CN104867993 A CN 104867993A CN 201510247857 A CN201510247857 A CN 201510247857A CN 104867993 A CN104867993 A CN 104867993A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 131
- 239000010703 silicon Substances 0.000 title claims abstract description 131
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 title claims abstract description 16
- 238000001704 evaporation Methods 0.000 title abstract description 14
- 230000008020 evaporation Effects 0.000 title abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 63
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000004411 aluminium Substances 0.000 claims abstract description 38
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 20
- 239000004332 silver Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 34
- 230000035484 reaction time Effects 0.000 claims description 31
- 210000005056 cell body Anatomy 0.000 claims description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 21
- 210000004027 cell Anatomy 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 238000007704 wet chemistry method Methods 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 101150097381 Mtor gene Proteins 0.000 claims description 12
- 238000010257 thawing Methods 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000010923 batch production Methods 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000007781 pre-processing Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 11
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H01L31/022425—
-
- H01L31/1804—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method for an inclined evaporation metal contact silicon solar cell, and the method comprises the steps: carrying out laser slotting on the front surface of a silicon chip; carrying out the preprocessing of the silicon chip; forming an N-type emitter electrode on the front surface of the silicon chip through phosphorus diffusion; carrying out laser slotting on the back surface of the silicon chip; forming a back electrode on the back surface of the silicon chip; forming an oxidation layer on the front surface of the silicon chip under the condition of low temperature and high voltage, wherein the surface of the oxidation layer is provided with a trench shape; employing vacuum evaporation equipment, wherein the interior of the vacuum evaporation equipment is provided with an aluminium wire evaporated into gaseous aluminium particles which react and are deposited on a side surface of a front groove of the silicon chip and form a positive electrode; employing a conductive silver adhesive to connect all surface electrodes; forming a front passivation layer on the front surface of the silicon chip; forming a back front passivation layer on the back surface of the silicon chip, and forming a solar cell. The solar cell is simple in manufacture, and an electrode material has no loss. The solar cell is low in cost, is low energy consumption, and is suitable for batch production.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of tilting evaporated metal contact crystal silicon solar batteries and preparation method thereof.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.Owing to being the solid semiconductor device utilizing the photovoltaic effect of various potential barrier solar energy to be converted to electric energy, therefore also known as solar cell or photovoltaic cell, be the significant components of solar array power-supply system.Solar cell mainly contains crystal silicon (Si) battery, three or five race semi-conductor cell (GaAs, Cds/Cu
2s, Cds/CdTe, Cds/InP, CdTe/Cu
2te), without machine battery, organic battery etc., wherein crystal silicon solar batteries occupies market mainstream leading position.The stock of crystal silicon solar batteries is that purity reaches 99.9999%, resistivity at the p type single crystal silicon of 10 more than Ω-cm, comprise the parts such as front matte, front p-n junction, front surface antireflection film, positive backplate.Being front in component package adds printing opacity cover plate (glass as saturating in height and EVA) protection by plane of illumination, prevents battery to be subject to the radiation damage of high energy electron and proton in the Van Allen belt of outer space.
The process route of conventional solar cell is all adopt wet-method etching → High temperature diffusion → wet etching → high temperature reduced passivation resisting plated film → silk screen printing (conductive silver paste, aluminium paste) → high temperature sintering → formation solar cell.Owing to using wet-method etching surface texturing techniques, the control for suede structure is poor, therefore cannot obtain more complete conforming suede structure, and existing technique many uses high temperature process, cause power consumption higher, what have the greatest impact is, use expensive conductive silver slurry, cost is higher.
Summary of the invention
Technical problem to be solved by this invention is, provide a kind of and make simple, electrode material is without consume, with low cost, consume energy preparation method that the is low and crystal silicon solar batteries of applicable production in enormous quantities etc.
Technical problem to be solved by this invention is also, provides a kind of structure simple, and electrode material is without consume, with low cost, consume energy the low and crystal silicon solar batteries of applicable production in enormous quantities etc.
In order to solve the problems of the technologies described above, the invention provides the preparation method of a kind of tilting evaporated metal contact crystal silicon solar batteries, comprising:
A. at the front lbg of silicon chip, front cell body is formed;
B. preliminary treatment is carried out to silicon chip;
C. spread by phosphorus at front side of silicon wafer, form N-type emitter;
D. at silicon chip back side lbg, back side cell body is formed;
E. back electrode is formed at silicon chip back side;
F. front side of silicon wafer is under the condition of cryogenic high pressure, passes into oxygen and HCL gas, and form the oxide layer that surface has groove pattern, wherein, pressure is 8-22 atmospheric pressure, and temperature is 600-800 DEG C, HCL gas is 2 ~ 4:1 with the ratio of the air flow rate of oxygen;
G. using vacuum evaporation equipment, be provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms positive electrode at the side reactive deposition of the front cell body of silicon chip;
H. conductive silver glue is used to link each electrode;
I. front passivation layer is formed at front side of silicon wafer;
J. form backside passivation layer at silicon chip back side, form solar cell.
As the improvement of such scheme, in step G, the thickness of described positive electrode is purity>=99.99% of 50-80um, described aluminium wire, and the vacuum degree of described vacuum evaporation equipment is 1.5x10
-3~ 1.2x10
-2pa;
Described silicon chip is located at the oblique upper of aluminium wire or oblique below.
As the improvement of such scheme, step e comprises: use vacuum evaporation equipment, being provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms the back electrode of thickness 100-200um in the reverse groove precursor reactant deposition of silicon chip.
As the improvement of such scheme, step H comprises: use conductive silver glue to link each electrode, conductive silver glue is cured reaction the condition of temperature 110-130 DEG C.
As the improvement of such scheme, in steps A, described front cell body is rectangle, and width is 50-80 um, and the degree of depth is 50-100 um, and grating spacing is 1-3mm.
As the improvement of such scheme, in step B, described preliminary treatment comprises successively:
Acid solution is used by silicon chip to carry out wet chemistry corrosion;
Silicon chip is carried out chemical cleaning;
At the back side diffusion mask of silicon chip;
Adopt alkaline solution to carry out the making herbs into wool of wet chemistry alkali in the front of silicon chip.
As the improvement of such scheme, described wet chemistry corrosion is that the acid solution using hydrofluoric acid and nitric acid to form corrodes, and wherein, reaction temperature is 30-40 DEG C, and the reaction time is 120-240 second, hydrofluoric acid: nitric acid=1:2-3;
Described chemical cleaning uses HPM solution under the condition of reaction temperature 70-90 DEG C, carry out first time cleaning, uses DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, described HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; Described DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
Described wet chemistry alkali making herbs into wool uses NaOH: Na
2siO
4: the mixed solution of IPA=1:1-2: 1-2 composition, carries out the condition of reaction temperature 80-90 DEG C.
As the improvement of such scheme, step F comprises: silicon chip is put into high-pressure chamber, the pressure of described high-pressure chamber is 10-20 atmospheric pressure, pass into oxygen and HCL gas, be react with silicon chip surface under the condition of 650-750 DEG C in reaction temperature, form the silicon dioxide oxide layer that thickness is 1-5nm, wherein, the gas flow of oxygen is the gas flow of 2000-5000 ml/min, HCL gas is 4000-20000 ml/min.
As the improvement of such scheme, described front passivation layer and backside passivation layer are silicon nitride film, and the gross thickness of described silicon nitride film is 80-120nm.
As the improvement of such scheme, described step I and J all adopts plasma reinforced chemical vapour deposition legal system to obtain passivation layer, and described plasma reinforced chemical vapour deposition method comprises:
Temperature 400-450 DEG C, pressure 1600-2000 mTor, plasma power 6000-7000 Watt reaction chamber in, pass into reacting gas NH
33.5-4.5 slm and SiH
4900-1100 sccm, reaction time 200-230 s, forms ground floor silicon nitride film;
By NH
3flow change into 4.5-6.5 slm, SiH
4flow change into 500-800 sccm, reaction time 390-410s, form second layer silicon nitride film.
Accordingly, the present invention also provides a kind of tilting evaporated metal to contact crystal silicon solar batteries, and described solar cell is obtained by the preparation method of above-mentioned any embodiment.
Implement the present invention, there is following beneficial effect:
One, the present invention adopts silicon chip to be matrix, forms oxide layer, form positive electrode by vacuum evaporation by step F, and battery structure is based on metal → insulator → semiconductor contact, and wherein, metal is positive electrode, and insulator is oxide layer, and semiconductor is silicon chip.Due to the structural design of metal-insulator semiconductor, electrode and emitter are not directly contact, therefore battery surface is passivated completely, and Carrier recombination is very little, can obtain very high open circuit voltage and fill factor, curve factor.
Two, oxide layer has groove pattern and its very thin thickness, the aluminium of the very thin oxide layer surface thereof evaporation low cost of surface grooves pattern is as electrode, photoetching, electrode need not burn technique and can form high-quality electrode contact, overcome this shortcoming of further raising that traditional silk-screened electrode technology strictly limits battery efficiency.
Three, the present invention adopts tilting to evaporate the mode of aluminum metal, forms positive electrode to make gaseous aluminum particulate at the side reactive deposition of the front cell body of silicon chip.Because electrode is the side of evaporation in the oxide layer of groove pattern, therefore positive electrode is almost unobstructed to battery surface, minimum to the shielding rate of light, is conducive to improving short circuit current.
Four, the present invention adopts tilting to evaporate the mode of aluminum metal, silicon chip can with the mode of circumference arrangement be located at aluminium wire oblique upper or tiltedly below to complete evaporation, therefore the present invention is disposable can the large batch of battery electrode of evaporation, make simple, be applicable to producing in enormous quantities.
Five, due to the structural design of metal-insulator semiconductor, electrode and emitter are not directly contact, therefore the present invention also can not optimized for emission pole by contact performance restriction.
Six, because the present invention has above-mentioned feature, therefore it directly uses conductive silver glue to link each electrode, do not need as prior art, use conductive silver paste to connect each electrode, conductive silver glue is compared with conductive silver paste, greatly save the cost of raw material, further, the silver that the present invention adopts aluminium with low cost to replace cost intensive does surface electrode, without the need to mask and evaporation metal almost free of losses when making front electrode.
Seven, because the present invention has above-mentioned feature, therefore it carries out surface passivation under cryogenic, can obtain high-quality passivation effect.
To sum up, manufacture craft of the present invention is simple, without the need to photoetching and other high-temperature technologies, and low, the electrode material of consuming energy, without consume, with low cost, utilizes angled manner can disposable evaporation battery in enormous quantities, is applicable to producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the flow chart of preparation method of the present invention;
Fig. 2 is the structural representation of the solar cell that the present invention obtains;
Fig. 3 is the cutaway view of oxide layer shown in Fig. 2;
Fig. 4 is the structural representation of vacuum evaporation equipment of the present invention;
Fig. 5 is the vertical view of vacuum evaporation equipment shown in Fig. 4;
Fig. 6 is the enlarged drawing in the portion of A shown in Fig. 4.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
See Fig. 1, the invention provides a kind of tilting evaporated metal contact crystal silicon solar batteries, comprising:
S101, front lbg at silicon chip, form front cell body.
Preferably, described silicon chip is P-type silicon, and use Nd:YAG laser (wavelength: 532nm) fluting in the front of silicon chip, described front cell body is rectangle, and width is 50-80 um, and the degree of depth is 50-100 um, and grating spacing is 1-3mm.
S102, preliminary treatment is carried out to silicon chip.
Described preliminary treatment comprises successively:
(1) used by silicon chip acid solution to carry out wet chemistry corrosion, concrete, described wet chemistry corrosion is that the acid solution using hydrofluoric acid and nitric acid to form corrodes, wherein, reaction temperature is 30-40 DEG C, and the reaction time is 120-240 second, hydrofluoric acid: nitric acid=1:2-3.
(2) silicon chip is carried out chemical cleaning, concrete, described chemical cleaning uses HPM solution under the condition of reaction temperature 70-90 DEG C, carry out first time cleaning, uses DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, described HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; Described DHF solution is by HF, H
2o forms, HF:H
2o=1:100.
Adopt above-mentioned cleaning way, bring following advantage: DHF can remove the natural oxide film of silicon chip surface and the metal hydroxides of attachment thereof; HPM is for removing the metal contamination such as sodium, iron, magnesium of silicon chip surface, and at room temperature HPM just can remove Fe and Zn.
(3) at the back side diffusion mask of silicon chip.
It should be noted that, described diffusion mask adopts prior art, such as liquid source thermal diffusion, obtained.
(4) adopt alkaline solution to carry out the making herbs into wool of wet chemistry alkali in the front of silicon chip, concrete, described wet chemistry alkali making herbs into wool uses NaOH: Na
2siO
4: the mixed solution of IPA=1:1-2: 1-2 composition, carries out the condition of reaction temperature 80-90 DEG C.
S103, to be spread by phosphorus at front side of silicon wafer, form N-type emitter;
Preferably, step S103 uses phosphorus oxychloride (POCL
3), in the scope that reaction temperature is 700-800 DEG C, realize diffusion.
S104, at silicon chip back side lbg, form back side cell body.
S105, silicon chip back side formed back electrode.
The preparation of back electrode can be obtained by common silk-screen printing technique, or uses vacuum evaporation equipment to obtain.
Preferably, back electrode uses vacuum evaporation equipment to obtain, and wherein, being provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms the back electrode of thickness 100-200um in the reverse groove precursor reactant deposition of silicon chip.
Vacuum evaporation equipment is adopted to obtain back electrode, can the large batch of battery electrode of disposable evaporation, make simple, be applicable to producing in enormous quantities.In addition, vacuum evaporation equipment accurately can control the thickness of back electrode, by its THICKNESS CONTROL in the scope of 100-200um, meets the different requirements of back electrode to solder, welding temperature.
S106, front side of silicon wafer, under the condition of cryogenic high pressure, pass into oxygen and HCL gas, and form the oxide layer that surface has groove pattern, wherein, pressure is 8-22 atmospheric pressure, and temperature is 600-800 DEG C, HCL gas is 2 ~ 4:1 with the ratio of the air flow rate of oxygen.
Preferably, silicon chip is put into high-pressure chamber, the pressure of described high-pressure chamber is 10-20 atmospheric pressure, pass into oxygen and HCL gas, be react with silicon chip surface under the condition of 650-750 DEG C in reaction temperature, form the silicon dioxide oxide layer that thickness is 1-5nm, wherein, the gas flow of oxygen is the gas flow of 2000-5000 ml/min, HCL gas is 4000-20000 ml/min.
The oxide layer obtained by said method has groove pattern and its very thin thickness, the aluminium of the very thin oxide layer surface thereof evaporation low cost of surface grooves pattern is as electrode, photoetching, electrode need not burn technique and can form high-quality electrode contact, overcome this shortcoming of further raising that traditional silk-screened electrode technology strictly limits battery efficiency.
S107, use vacuum evaporation equipment, being provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms positive electrode at the side reactive deposition of the front cell body of silicon chip.
Preferably, the thickness of described positive electrode is purity>=99.99% of 50-80um, described aluminium wire, and the vacuum degree of described vacuum evaporation equipment is 1.5x10
-3~ 1.2x10
-2pa.Vacuum evaporation equipment accurately can control the thickness of back electrode, by its THICKNESS CONTROL in the scope of 50-80um, meets the different requirements of positive electrode to solder, welding temperature.
Described silicon chip is located at the oblique upper of aluminium wire or oblique below, and the present invention adopts tilting to evaporate the mode of aluminum metal, forms positive electrode to make gaseous aluminum particulate at the side reactive deposition of the front cell body of silicon chip.Because electrode is the side of evaporation in the oxide layer of groove pattern, therefore positive electrode is almost unobstructed to battery surface, minimum to the shielding rate of light, is conducive to improving short circuit current.
Further, the invention provides the preferred implementation of vacuum evaporation equipment, as shown in Figure 4,5, heater 20 is provided with in the middle of the bottom of described vacuum evaporation equipment 10, aluminium wire 30 is provided with in described heater 20, the top of described vacuum evaporation equipment is provided with multiple silicon chip 40, and described multiple silicon chip 40 is distributed in the surrounding of vacuum evaporation equipment 10.Better, this heater 20 is crucible, and multiple silicon chip 40 is distributed in the surrounding of vacuum evaporation equipment 10 with circular manner, but is not limited thereto.
As shown in Figure 6, silicon chip 40 can be located at the oblique upper of aluminium wire or oblique below in the mode of circumference arrangement, aluminium wire thawing flashes to gaseous aluminum particulate, to be tilt relationship with vertical direction, direction (direction B as shown in Figure 6) contacts with silicon chip 40 gaseous aluminum particulate, and gaseous aluminum particulate forms positive electrode 6 at the side reactive deposition of the front cell body 8 of silicon chip 40.The present invention is disposable can the large batch of battery electrode of evaporation, makes simple, is applicable to producing in enormous quantities.
S108, use conductive silver glue link each electrode.
Use conductive silver glue to link each electrode, conductive silver glue is cured reaction the condition of temperature 110-130 DEG C.
Because the present invention has above-mentioned feature, therefore it directly uses conductive silver glue to link each electrode, do not need as prior art, use conductive silver paste to connect each electrode, conductive silver glue is compared with conductive silver paste, greatly save the cost of raw material, further, the silver that the present invention adopts aluminium with low cost to replace cost intensive does surface electrode, without the need to mask and evaporation metal almost free of losses when making front electrode.
S109, form front passivation layer at front side of silicon wafer;
Described front passivation layer is silicon nitride film, and front passivation layer adopts plasma reinforced chemical vapour deposition method to obtain, and comprises the following steps:
(1) temperature 400-450 DEG C, pressure 1600-2000 mTor, plasma power 6000-7000 Watt reaction chamber in, pass into reacting gas NH
33.5-4.5 slm and SiH
4900-1100 sccm, reaction time 200-230 s, forms ground floor silicon nitride film;
(2) by NH
3flow change into 4.5-6.5 slm, SiH
4flow change into 500-800 sccm, reaction time 390-410s, form second layer silicon nitride film.
Ground floor silicon nitride film and the superposition of second layer silicon nitride film form silicon nitride film, and the gross thickness of silicon nitride film is 80-120nm.
S110, silicon chip back side formed backside passivation layer, formed solar cell.
Described backside passivation layer is silicon nitride film, and backside passivation layer adopts plasma reinforced chemical vapour deposition method to obtain, and comprises the following steps:
(1) temperature 400-450 DEG C, pressure 1600-2000 mTor, plasma power 6000-7000 Watt reaction chamber in, pass into reacting gas NH
33.5-4.5 slm and SiH
4900-1100 sccm, reaction time 200-230 s, forms ground floor silicon nitride film;
(2) by NH
3flow change into 4.5-6.5 slm, SiH
4flow change into 500-800 sccm, reaction time 390-410s, form second layer silicon nitride film.
Ground floor silicon nitride film and the superposition of second layer silicon nitride film form silicon nitride film, and the gross thickness of silicon nitride film is 80-120nm.
Accordingly, the present invention also provides a kind of tilting evaporated metal to contact crystal silicon solar batteries, and described solar cell preparation method as shown in Figure 1 obtains.This solar cell finished product as shown in Figure 2, comprise backside passivation layer 1, back electrode 2, P-type silicon 3, N-type emitter 4, oxide layer 5, positive electrode 6 and front passivation layer 7 from the bottom to top successively, described backside passivation layer 1, back electrode 2, P-type silicon 3, N-type emitter 4, oxide layer 5, positive electrode 6 and front passivation layer 7 are interconnected successively.The front of P-type silicon 3 offers front cell body 8, and positive electrode 6 is located at the side of front cell body 8.
As shown in Figure 3, the surface of oxide layer 5 forms groove 51, and the thickness of oxide layer 5 is 1-5nm.In the very thin oxide layer of surface grooves pattern, the aluminium of evaporation low cost is as positive electrode, photoetching, electrode need not burn technique and can form high-quality electrode contact, overcome this shortcoming of further raising that traditional silk-screened electrode technology strictly limits battery efficiency.
The present invention is set forth further below with specific embodiment
Embodiment 1
Select P-type silicon, use Nd:YAG laser (wavelength: 532nm) fluting in the front of silicon chip, described front cell body is rectangle, and width is 50 um, and the degree of depth is 50 um, and grating spacing is 1mm;
The acid solution using hydrofluoric acid and nitric acid to form corrodes silicon chip, and wherein, reaction temperature is 30 DEG C, and the reaction time is 120 seconds, hydrofluoric acid: nitric acid=1:2;
Use HPM solution under the condition of reaction temperature 70 DEG C, carry out first time cleaning, use DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
At the back side diffusion mask of silicon chip;
NaOH: Na is adopted in the front of silicon chip
2siO
4: the mixed solution of IPA=1:1: 1 composition, carries out the making herbs into wool of wet chemistry alkali in the condition of reaction temperature 80 DEG C;
Use phosphorus oxychloride (POCL
3) diffusion, form N-type emitter, reaction temperature is 700 DEG C;
At silicon chip back side lbg, form back side cell body;
Back electrode is formed by silk screen printing;
Be 8 atmospheric pressure at pressure, temperature is under the condition of 600 DEG C, passes into the oxygen of 2000 ml/min and the HCL gas of 4000 ml/min, forms 1nm, oxide layer that surface has groove pattern;
Use vacuum evaporation equipment, being provided with aluminium wire in vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3pa, temperature is under the condition of 1200 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and it is the positive electrode of 50um that gaseous aluminum particulate forms thickness at the side reactive deposition of the front cell body of silicon chip;
Use conductive silver glue to link each electrode, and be cured reaction in the condition of temperature 110 DEG C;
Form at front side of silicon wafer the front passivation layer that gross thickness is 80nm, preparation front passivation layer comprises: in the reaction chamber of temperature 400 DEG C, pressure 1600 mTor, plasma power 6000 Watt, pass into reacting gas NH
33.5 slm and SiH
4900 sccm, reaction time 200 s, form ground floor silicon nitride film; By NH
3flow change into 4.5 slm, SiH
4flow change into 500 sccm, reaction time 390s, form second layer silicon nitride film;
Forming gross thickness at silicon chip back side is the backside passivation layer of 80nm, and preparation backside passivation layer comprises: in the reaction chamber of temperature 400 DEG C, pressure 1600 mTor, plasma power 6000 Watt, pass into reacting gas NH
33.5 slm and SiH
4900 sccm, reaction time 200 s, form ground floor silicon nitride film; By NH
3flow change into 4.5 slm, SiH
4flow change into 500 sccm, reaction time 390s, form second layer silicon nitride film.Finally, solar cell finished product is obtained.
Embodiment 2
Select P-type silicon, use Nd:YAG laser (wavelength: 532nm) fluting in the front of silicon chip, described front cell body is rectangle, and width is 60 um, and the degree of depth is 70 um, and grating spacing is 2mm;
The acid solution using hydrofluoric acid and nitric acid to form corrodes silicon chip, and wherein, reaction temperature is 35 DEG C, and the reaction time is 150 seconds, hydrofluoric acid: nitric acid=1:2.5;
Use HPM solution under the condition of reaction temperature 80 DEG C, carry out first time cleaning, use DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
At the back side diffusion mask of silicon chip;
NaOH: Na is adopted in the front of silicon chip
2siO
4: the mixed solution of IPA=1:1: 2 compositions, carries out the making herbs into wool of wet chemistry alkali in the condition of reaction temperature 82 DEG C;
Use phosphorus oxychloride (POCL
3) diffusion, form N-type emitter, reaction temperature is 750 DEG C;
At silicon chip back side lbg, form back side cell body;
Back electrode is formed by silk screen printing;
Be 15 atmospheric pressure at pressure, temperature is under the condition of 700 DEG C, passes into the oxygen of 3000 ml/min and the HCL gas of 7500 ml/min, forms 2nm, oxide layer that surface has groove pattern;
Use vacuum evaporation equipment, being provided with aluminium wire in vacuum evaporation equipment, is 1.3x10 in vacuum degree
-2pa, temperature is under the condition of 1300 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and it is the positive electrode of 60um that gaseous aluminum particulate forms thickness at the side reactive deposition of the front cell body of silicon chip;
Use conductive silver glue to link each electrode, and be cured reaction in the condition of temperature 120 DEG C;
Form at front side of silicon wafer the front passivation layer that gross thickness is 100nm, preparation front passivation layer comprises: in the reaction chamber of temperature 420 DEG C, pressure 1800 mTor, plasma power 6200Watt, pass into reacting gas NH
33.8slm and SiH
4950 sccm, reaction time 210s, form ground floor silicon nitride film; By NH
3flow change into 5.5slm, SiH
4flow change into 600sccm, reaction time 400s, form second layer silicon nitride film;
Forming gross thickness at silicon chip back side is the backside passivation layer of 100nm, and preparation backside passivation layer comprises: in the reaction chamber of temperature 420 DEG C, pressure 1800 mTor, plasma power 6200Watt, pass into reacting gas NH
33.8slm and SiH
4950 sccm, reaction time 210s, form ground floor silicon nitride film; By NH
3flow change into 5.5slm, SiH
4flow change into 600sccm, reaction time 400s, form second layer silicon nitride film.Finally, solar cell finished product is obtained.
Embodiment 3
Select P-type silicon, use Nd:YAG laser (wavelength: 532nm) fluting in the front of silicon chip, described front cell body is rectangle, and width is 70 um, and the degree of depth is 80 um, and grating spacing is 2.5mm;
The acid solution using hydrofluoric acid and nitric acid to form corrodes silicon chip, and wherein, reaction temperature is 65 DEG C, and the reaction time is 200 seconds, hydrofluoric acid: nitric acid=1:3;
Use HPM solution under the condition of reaction temperature 85 DEG C, carry out first time cleaning, use DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
At the back side diffusion mask of silicon chip;
NaOH: Na is adopted in the front of silicon chip
2siO
4: the mixed solution of IPA=1:2: 2 compositions, carries out the making herbs into wool of wet chemistry alkali in the condition of reaction temperature 88 DEG C;
Use phosphorus oxychloride (POCL
3) diffusion, form N-type emitter, reaction temperature is 780 DEG C;
At silicon chip back side lbg, form back side cell body;
Back electrode is formed by silk screen printing;
Be 20 atmospheric pressure at pressure, temperature is under the condition of 750 DEG C, passes into the oxygen of 4000 ml/min and the HCL gas of 12000 ml/min, forms 3nm, oxide layer that surface has groove pattern;
Use vacuum evaporation equipment, being provided with aluminium wire in vacuum evaporation equipment, is 2.0x10 in vacuum degree
-3pa, temperature is under the condition of 1350 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and it is the positive electrode of 70um that gaseous aluminum particulate forms thickness at the side reactive deposition of the front cell body of silicon chip;
Use conductive silver glue to link each electrode, and be cured reaction in the condition of temperature 125 DEG C;
Form at front side of silicon wafer the front passivation layer that gross thickness is 110nm, preparation front passivation layer comprises: in the reaction chamber of temperature 440 DEG C, pressure 1900 mTor, plasma power 6800 Watt, pass into reacting gas NH
34.2 slm and SiH
41000 sccm, reaction time 220 s, form ground floor silicon nitride film; By NH
3flow change into 6.0 slm, SiH
4flow change into 700 sccm, reaction time 400s, form second layer silicon nitride film;
Forming gross thickness at silicon chip back side is the backside passivation layer of 110nm, and preparation backside passivation layer comprises: in the reaction chamber of temperature 440 DEG C, pressure 1900 mTor, plasma power 6800 Watt, pass into reacting gas NH
34.2 slm and SiH
41000 sccm, reaction time 220 s, form ground floor silicon nitride film; By NH
3flow change into 6.0 slm, SiH
4flow change into 700 sccm, reaction time 400s, form second layer silicon nitride film.Finally, solar cell finished product is obtained.
Embodiment 4
Select P-type silicon, use Nd:YAG laser (wavelength: 532nm) fluting in the front of silicon chip, described front cell body is rectangle, and width is 80 um, and the degree of depth is 100 um, and grating spacing is 3mm;
The acid solution using hydrofluoric acid and nitric acid to form corrodes silicon chip, and wherein, reaction temperature is 40 DEG C, and the reaction time is 240 seconds, hydrofluoric acid: nitric acid=1:3;
Use HPM solution under the condition of reaction temperature 90 DEG C, carry out first time cleaning, use DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
At the back side diffusion mask of silicon chip;
NaOH: Na is adopted in the front of silicon chip
2siO
4: the mixed solution of IPA=1:2: 2 compositions, carries out the making herbs into wool of wet chemistry alkali in the condition of reaction temperature 90 DEG C;
Use phosphorus oxychloride (POCL
3) diffusion, form N-type emitter, reaction temperature is 800 DEG C;
At silicon chip back side lbg, form back side cell body;
Back electrode is formed by silk screen printing;
Be 22 atmospheric pressure at pressure, temperature is under the condition of 800 DEG C, passes into the oxygen of 5000 ml/min and the HCL gas of 20000 ml/min, forms 5nm, oxide layer that surface has groove pattern;
Use vacuum evaporation equipment, being provided with aluminium wire in vacuum evaporation equipment, is 1.3x10 in vacuum degree
-2pa, temperature is under the condition of 1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and it is the positive electrode of 80um that gaseous aluminum particulate forms thickness at the side reactive deposition of the front cell body of silicon chip;
Use conductive silver glue to link each electrode, and be cured reaction in the condition of temperature 130 DEG C;
Form at front side of silicon wafer the front passivation layer that gross thickness is 120nm, preparation front passivation layer comprises: in the reaction chamber of temperature 450 DEG C, pressure 2000 mTor, plasma power 7000 Watt, pass into reacting gas NH
34.5 slm and SiH
41100 sccm, reaction time 230 s, form ground floor silicon nitride film; By NH
3flow change into 6.5 slm, SiH
4flow change into 800 sccm, reaction time 410s, form second layer silicon nitride film;
Forming gross thickness at silicon chip back side is the backside passivation layer of 120nm, and preparation backside passivation layer comprises: in the reaction chamber of temperature 450 DEG C, pressure 2000 mTor, plasma power 7000 Watt, pass into reacting gas NH
34.5 slm and SiH
41100 sccm, reaction time 230 s, form ground floor silicon nitride film; By NH
3flow change into 6.5 slm, SiH
4flow change into 800 sccm, reaction time 410s, form second layer silicon nitride film.Finally, solar cell finished product is obtained.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a preparation method for tilting evaporated metal contact crystal silicon solar batteries, is characterized in that, comprising:
A, front lbg at silicon chip, form front cell body;
B, preliminary treatment is carried out to silicon chip;
C, to be spread by phosphorus at front side of silicon wafer, form N-type emitter;
D, at silicon chip back side lbg, form back side cell body;
E, silicon chip back side formed back electrode;
F, front side of silicon wafer, under the condition of cryogenic high pressure, pass into oxygen and HCL gas, and form the oxide layer that surface has groove pattern, wherein, pressure is 8-22 atmospheric pressure, and temperature is 600-800 DEG C, HCL gas is 2 ~ 4:1 with the ratio of the air flow rate of oxygen;
G, use vacuum evaporation equipment, being provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms positive electrode at the side reactive deposition of the front cell body of silicon chip;
H, use conductive silver glue link each electrode;
I, form front passivation layer at front side of silicon wafer;
J, silicon chip back side formed backside passivation layer, formed solar cell.
2. preparation method as claimed in claim 1, it is characterized in that, in step G, the thickness of described positive electrode is purity>=99.99% of 50-80um, described aluminium wire, and the vacuum degree of described vacuum evaporation equipment is 1.5x10
-3~ 1.2x10
-2pa;
Described silicon chip is located at the oblique upper of aluminium wire or oblique below.
3. preparation method as claimed in claim 1, it is characterized in that, step e comprises: use vacuum evaporation equipment, being provided with aluminium wire in described vacuum evaporation equipment, is 1.3x10 in vacuum degree
-3~ 1.3x10
-2pa, temperature is under the condition of 1200-1400 DEG C, and aluminium wire thawing flashes to gaseous aluminum particulate, and gaseous aluminum particulate forms the back electrode of thickness 100-200um in the reverse groove precursor reactant deposition of silicon chip.
4. the preparation method as described in any one of claim 1-3, is characterized in that, step H comprises: use conductive silver glue to link each electrode, conductive silver glue is cured reaction the condition of temperature 110-130 DEG C.
5. preparation method as claimed in claim 4, it is characterized in that, in steps A, described front cell body is rectangle, and width is 50-80 um, and the degree of depth is 50-100 um, and grating spacing is 1-3mm.
6. preparation method as claimed in claim 4, it is characterized in that, in step B, described preliminary treatment comprises successively:
Acid solution is used by silicon chip to carry out wet chemistry corrosion;
Silicon chip is carried out chemical cleaning;
At the back side diffusion mask of silicon chip;
Adopt alkaline solution to carry out the making herbs into wool of wet chemistry alkali in the front of silicon chip.
7. preparation method as claimed in claim 6, is characterized in that, described wet chemistry corrosion is that the acid solution using hydrofluoric acid and nitric acid to form corrodes, wherein, reaction temperature is 30-40 DEG C, and the reaction time is 120-240 second, hydrofluoric acid: nitric acid=1:2-3;
Described chemical cleaning uses HPM solution under the condition of reaction temperature 70-90 DEG C, carry out first time cleaning, uses DHF solution under the condition of room temperature, carry out second time cleaning; Wherein, described HPM solution is by HCl, H
2o
2, H
2o forms, HCl:H
2o
2: H
2o=1:1:6; Described DHF solution is by HF, H
2o forms, HF:H
2o=1:100;
Described wet chemistry alkali making herbs into wool uses NaOH: Na
2siO
4: the mixed solution of IPA=1:1-2: 1-2 composition, carries out the condition of reaction temperature 80-90 DEG C.
8. preparation method as claimed in claim 4, it is characterized in that, step F comprises: silicon chip is put into high-pressure chamber, the pressure of described high-pressure chamber is 10-20 atmospheric pressure, passes into oxygen and HCL gas, is to react with silicon chip surface under the condition of 650-750 DEG C in reaction temperature, form the silicon dioxide oxide layer that thickness is 1-5nm, wherein, the gas flow of oxygen is the gas flow of 2000-5000 ml/min, HCL gas is 4000-20000 ml/min.
9. preparation method as claimed in claim 4, it is characterized in that, described front passivation layer and backside passivation layer are silicon nitride film, and the gross thickness of described silicon nitride film is 80-120nm;
Described step I and J all adopts plasma reinforced chemical vapour deposition legal system to obtain passivation layer, and described plasma reinforced chemical vapour deposition method comprises:
Temperature 400-450 DEG C, pressure 1600-2000 mTor, plasma power 6000-7000 Watt reaction chamber in, pass into reacting gas NH
33.5-4.5 slm and SiH
4900-1100 sccm, reaction time 200-230 s, forms ground floor silicon nitride film;
By NH
3flow change into 4.5-6.5 slm, SiH
4flow change into 500-800 sccm, reaction time 390-410s, form second layer silicon nitride film.
10. a tilting evaporated metal contact crystal silicon solar batteries, is characterized in that, described tilting evaporated metal contact crystal silicon solar batteries is obtained by the preparation method described in any one of claim 1-9.
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| CN1489791A (en) * | 2001-02-01 | 2004-04-14 | ��Խ�뵼����ʽ���� | Solar cell module and its installing method |
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