CN104867950B - Photosensitive element and preparation method thereof - Google Patents
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- CN104867950B CN104867950B CN201510162031.1A CN201510162031A CN104867950B CN 104867950 B CN104867950 B CN 104867950B CN 201510162031 A CN201510162031 A CN 201510162031A CN 104867950 B CN104867950 B CN 104867950B
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Abstract
The invention discloses a kind of photosensitive elements, including：Substrate；Photosensitive unit is located in the substrate, includes the pel array being made of multiple photosensitive pixels；Lenticule unit, including multiple monochromatic lenticules, the monochrome lenticule are located on the photosensitive pixel, configure to make the light of particular color be incident on the photosensitive pixel corresponding with the particular color；And grid baffle, in the substrate and it is formed between the photosensitive pixel, the wherein described grid baffle is formed by non-reflective conductive material and is formed mesh shape corresponding with the pel array, configures to make the leakage current generated in each photosensitive pixel flow to the substrate and block the stray light between each pixel.
Description
Technical field
The present invention relates to a kind of photosensitive elements and preparation method thereof more particularly to one kind capable of reducing image blur and crosstalk
Photosensitive element and preparation method thereof.
Background technology
The pixel density of photosensitive element chip is higher and higher at present, and since the size of photosensitive element is there are limit,
The size of chip is substantially stationary, and it is smaller and smaller to thereby result in each photosensitive pixel.In general, the photosensitive pixel on chip always exists
Leakage current, the leakage current can flow in adjacent pixel, lead to image blur.In addition, can exist above each photosensitive pixel
Lenticule, theoretically, the lenticule only allow a certain monochromatic light to be incident on photosensitive pixel below, however in practice, by
In the limitation of the production technology and photosensitive pixel size of lenticule, can all there be a certain amount of stray light and be incident on other colors
Photosensitive pixel on, to cause imaging cross-interference issue.Meanwhile as described above, since the pixel on photosensitive element chip has
Smaller and smaller trend, stray light is also easier to be incident on the photosensitive pixel of other colors, and it is more next to be thus imaged cross-interference issue
It is more serious.
Invention content
In order to solve the above-mentioned technical problem, the purpose of the present invention is to provide one kind can generally reduce photosensitive pixel it
Between fuzzy and crosstalk photosensitive element and preparation method thereof.
According to an aspect of the present invention, a kind of photosensitive element is provided, including：Substrate；Photosensitive unit is located at the substrate
On, include the pel array being made of multiple photosensitive pixels；Lenticule unit, including multiple monochromatic lenticules, the monochrome are micro-
Lens are located on the photosensitive pixel, and configuration is corresponding with the particular color described photosensitive to make the light of particular color be incident on
In pixel；And grid baffle, in the substrate and between being formed in the photosensitive pixel, wherein the grid baffle by
Non-reflective conductive material forms and is formed mesh shape corresponding with the pel array, and configuration is each described to make
The leakage current generated in photosensitive pixel flows to the substrate and blocks the stray light between each pixel.
According to another aspect of the present invention, a kind of photosensitive element preparation method is provided, including：Prepare substrate；In the base
The grid baffle with mesh shape is formed on bottom, wherein the grid baffle is formed by non-reflective conductive material；Described
Formation includes the photosensitive unit for the pel array being made of multiple photosensitive pixels in substrate, wherein adjacent in the photosensitive unit
The photosensitive pixel is opened by the grid baffle interval；And lenticule unit is formed on photosensitive unit, wherein described micro-
Mirror unit includes multiple monochromatic lenticules, and the monochrome lenticule is located on the photosensitive pixel, configures to make particular color
Light is incident on the photosensitive pixel corresponding with the particular color, wherein the grid baffle arrange-ment is each described to make
The leakage current generated in photosensitive pixel flows to the substrate and blocks the stray light between each pixel.
Technique effect
It can be seen that photosensitive element according to an embodiment of the invention and preparation method thereof by multiple photosensitive pixels it
Between grid baffle formed by non-reflective conductive material, to make generated leakage current in each photosensitive pixel flow to photosensitive member
The substrate of part and the stray light between each pixel is blocked, thus, it is possible to guide leakage current caused by pixel to chip
Substrate avoids leakage current and flows in adjacent pixel, to reduce the fuzzy of imaging, and due to grid baffle
Stray light is incident in the pixel of other colors, therefore can also improve the cross-interference issue of imaging.
Description of the drawings
Above and other purpose, the advantages and features of the present invention can be more completely understood in conjunction with the accompanying drawings, in the accompanying drawings：
Fig. 1 is the vertical view for showing photosensitive element according to an embodiment of the invention；
Fig. 2 is the side view for showing photosensitive element according to an embodiment of the invention；And
Fig. 3 is the flow chart for the preparation method for showing photosensitive element according to an embodiment of the invention.
Attached drawing is intended to describe exemplary embodiment of the present invention, and is not necessarily to be construed as limiting the scope of the invention.It removes
It non-clearly points out, otherwise attached drawing is not considered as drawn to scale.
Specific implementation mode
Hereinafter, it will be described in detail with reference to the accompanying drawings the preferred embodiment of the present invention.In the present description and drawings, it will adopt
Substantially the same element and function is presented with like reference characters, and the repeatability of these elements and function is said by omitting
It is bright.In addition, for clarity and brevity, it is convenient to omit for the explanation of function and construction known in the art.
With reference to the accompanying drawings to a preferred embodiment of the present invention will be described in detail.
Photosensitive element according to an embodiment of the invention is described in detail with reference first to Fig. 1 and Fig. 2.Fig. 1 is to show
The vertical view of photosensitive element 1 according to an embodiment of the invention.Fig. 2 is to show photosensitive element 1 according to an embodiment of the invention
Side view.Photosensitive element 1 according to an embodiment of the invention can be applied to the electricity such as video camera, camera, camera
In sub- equipment.
As shown in Figures 1 and 2, photosensitive element 1 include substrate (not shown), photosensitive unit 11, lenticule unit 12 with
And grid baffle 13.
Substrate is located at the bottom of photosensitive element 1, configures to carry other components of photosensitive element 1, can arrange in the substrate
Have data line, signal wire, power cord etc., they be used for for photosensitive element 1 pel array in each pixel transmission data, carry
For drive signal and electric power etc..
Photosensitive unit 11 is located in the substrate comprising the pel array being made of multiple photosensitive pixels.Specifically,
As shown in fig. 1, the RGB pictures that pel array is made of multiple R pixels 111, multiple G pixels 112 and multiple B pixels 113
Pixel array.Each pixel in R, G, B pixel of pel array corresponds to a kind of color in RGB three primary colors, and each primary colors is equal
A corresponding primary channel, the rank value with 0 to 256 rank can be formed respectively by being combined tri- primary channels of RGB
The color of kind various kinds.
Lenticule unit 12 includes multiple monochromatic lenticules, and the monochrome lenticule is located on the photosensitive pixel, configures
To make the light of particular color be incident on the photosensitive pixel corresponding with the particular color.Specifically, such as institute in Fig. 2
Show, R lenticules 121 are located in R pixels 111, are used to that red light only to be made to pass through and are incident on R pixels 111；G lenticules 122
In G pixels 112, it is used to that green light only to be made to pass through and is incident on G pixels 112；B lenticule (not shown) is located at B pictures
On element 123, it is used to that blue light only to be made to pass through and is incident on B pixels 113.Include although foregoing illustrates lenticule units 12
Multiple monochrome lenticules, however the present invention is not limited thereto, lenticule unit 12 can also be filtered by multiple lenticules and multiple RGB
Microscope group is in this case, RGB filters play the role of filtering light of particular color.
Grid baffle 13 is located in the substrate and is formed between the photosensitive pixel, wherein the grid baffle is not by
Reflective conductive material forms and is formed mesh shape corresponding with the pel array, configures to make each sense
The leakage current generated in light pixel flows to the substrate and blocks the stray light between each pixel.Specifically, as in Fig. 1
Shown, grid baffle 13 is formed mesh shape corresponding with rgb pixel array, the adjacent photosensitive pixel of any two it
Between be each formed with grid baffle 13.Grid baffle 13 is formed by non-reflective conductive material.Preferably, to make grid baffle 13 more
Realize that the effect for blocking stray light, the height of grid baffle 13 should be slightly above the height of photosensitive pixel well, in this case, R,
G, B lenticules are formed in the top of corresponding photosensitive pixel, and the edge of lenticule is abutted with grid baffle 13.It may be selected
Ground, R, G, B lenticule also may be formed on corresponding photosensitive pixel, and the top of grid baffle 13 is higher than the side of lenticule
Edge.The width of grid baffle 13 is preferably the 10% to 20% of the width of photosensitive pixel.However the present invention is not limited thereto, ability
Field technique personnel can according to the material etc. of manufacturing process, grid baffle 13 come to grid baffle 13 height and width select
It selects, stray light is blocked between adjacent pixels as long as can realize.
It is known to those skilled in the art that in the ideal situation, leakage current is not present in photosensitive pixel, however in practice,
Rambling movement is carried out due to being constantly present a part of electronics, this part has electronically formed leakage current.According to this hair
The photosensitive element of bright embodiment, since grid baffle 13 is formed by conductive material, so grid baffle 13 is used as positive terminal
Forward diode structure is constituted with the substrate as negative terminal so that grid baffle 13 receives to be produced in each photosensitive pixel
Raw leakage current is simultaneously directed to the substrate.Thus, generated leakage in each photosensitive pixel in rgb pixel array
Electric current is directed to the substrate by grid baffle 13, and is guided to external circuit by the substrate, thus avoids light-sensitive image
Leakage current in element flows in adjacent pixel, to reduce the fuzzy of imaging.It is noted that being set in the substrate
It is equipped with the connection circuit being connected with the external circuit, for being guided leakage current to the external circuit from grid baffle 13,
And the external circuit can be grounded, to introduce ground by leakage current.
It is noted that it is known to those skilled in the art that in the ideal situation, photosensitive pixel does not produce in dark surrounds
Raw sensing electric current, however in practice, due to the limitation of impurities of materials and production technology, even if photosensitive pixel is in dark surrounds
In also generate small sensing electric current, i.e. dark current.In routine use, this dark current moment all exists photosensitive element, sense
Optical element is difficult to accurately calculate the size of dark current and remove it from sensing electric current, thus influences the accurate of imaging
Property.The grid baffle 13 of embodiment through the invention can accurately calculate the dark current of entire photosensitive element.Specifically, due to
Grid baffle 13 was both non-reflective, did not also generate sensing electric current, therefore dark current caused by grid baffle 13 is one and can survey
The constant of amount, by comparing the material of the material and grid baffle 13 of photosensitive pixel, it can be deduced that dark current caused by the two
Between there are proportionate relationships, then can show that photosensitive pixel is produced by calculating the value of dark current caused by grid baffle 13
The value of raw dark current, and will be removed in its sensing electric current from photosensitive pixel and obtain actual sensed electric current, thus, it is possible to carry
The accuracy that high photosensitive element 1 is imaged.In this case, the connection circuit being arranged in the substrate or the external electrical
Road can be connect with AD converter, to calculate the value of dark current caused by grid baffle 13.
Further, since grid baffle 13 is non-reflective, so it can block each light-sensitive image in rgb pixel array
Stray light between element, it is photosensitive to ensure that the monochromatic light across RGB lenticules is accurately incident on corresponding RGB as much as possible
In pixel, the cross-interference issue of imaging is effectively improved.
It can be seen that photosensitive element 1 according to an embodiment of the invention by between multiple photosensitive pixels by non-reflective
Conductive material form grid baffle 13, to make generated leakage current in each photosensitive pixel flow to the base of photosensitive element 1
Bottom and the stray light between each photosensitive pixel is blocked, thus, it is possible to guide leakage current caused by photosensitive pixel to chip
Substrate, avoid leakage current and flow in adjacent pixel, to reduce the fuzzy of imaging, and due to grid baffle
Stray light is incident in the pixel of other colors, therefore can also improve the cross-interference issue of imaging.At the same time it can also utilize lattice
Grid baffle 13 calculates the dark current in photosensitive element 1, to improve the accuracy of the imaging of photosensitive element 1.
Selectively, as shown in Figure 2, photosensitive element 1 according to an embodiment of the invention may also include bottom plate 14.Bottom plate
14 between photosensitive unit 11 and grid baffle 13 and the substrate.Bottom plate 14 is also formed by non-reflective conductive material.By
It is non-reflective in bottom plate 14, it is possible to which that reduction reflects stray light between each photosensitive pixel.As shown in Figure 2, bottom plate 14 with
Grid baffle 13 connects, due to both being formed by conductive material, so, on the one hand, the leakage current transmitted by grid baffle 13
The substrate can be flowed to by bottom plate 14, on the other hand, generated leakage current can also pass through bottom in each photosensitive pixel
Plate 14 flows to the substrate, thus further improves the efficiency of guiding leakage current, improves the imaging caused by due to leakage current
It is fuzzy.
Preferably, grid baffle 13 is formed with bottom plate 14 by black silicon materials.However the present invention is not limited thereto, grid
Baffle 13 can also be formed with bottom plate 14 by semi-conducting materials such as germanium, selenium, boron, tellurium, antimony and their compounds.However this hair
Bright to be not limited to this, those skilled in the art can according to actual needs select grid baffle 13 and the material of bottom plate 14
It selects.
Photosensitive element preparation method 300 according to an embodiment of the invention is described in detail referring to Fig. 3.In order to
Convenient for description, will come to photosensitive element preparation method 300 in conjunction with each component part of Fig. 1 and photosensitive element shown in Fig. 21
It illustrates, therefore the detailed description by omission to each component part of photosensitive element 1.
As shown in Figure 3, in step S301, substrate is prepared.Substrate is located at the bottom of photosensitive element 1 and carries photosensitive element
1 other components, can be disposed with data line, signal wire, power cord etc. in the substrate, they are used for the pixel for photosensitive element 1
Each pixel transmission data, offer drive signal and electric power etc. in array.
In step S302, the grid baffle with mesh shape is formed on the substrate, wherein grid baffle is not by anti-
The conductive material of light is formed.
Specifically, grid baffle 13 is formed by non-reflective conductive material on the substrate, and by grid baffle 13
It is formed between each adjacent photosensitive pixel, wherein grid baffle 13 is formed grid-shaped corresponding with the pel array
Shape, it is spuious between each pixel to make the leakage current generated in each photosensitive pixel flow to the substrate and block
Light.As shown in fig. 1, grid baffle 13 is formed mesh shape corresponding with rgb pixel array, and any two is adjacent
Grid baffle 13 is each formed between photosensitive pixel.The conduction non-reflective as such as silicon or silicon compound of grid baffle 13
Material is formed.Preferably, the effect of stray light is blocked to make grid baffle 13 be better achieved, the height of grid baffle 13 should be omited
Higher than the height of photosensitive pixel, in this case, R, G, B lenticule are formed in the top of corresponding photosensitive pixel, and micro-
The edge of mirror is abutted with grid baffle 13.Selectively, R, G, B lenticule also may be formed on corresponding photosensitive pixel, and
The top of grid baffle 13 is higher than the edge of lenticule.The width of grid baffle 13 be preferably the width of photosensitive pixel 10% to
20%, however the present invention is not limited thereto, those skilled in the art can according to the material etc. of manufacturing process, grid baffle 13 come
The height and width of grid baffle 13 are selected, stray light is blocked between adjacent pixels as long as can realize.Lattice
Grid baffle 13 configuration come so that the leakage current generated in each photosensitive pixel is flowed to the substrate and block each pixel it
Between stray light.
In step S303, formation on the substrate includes the photosensitive list for the pel array being made of multiple photosensitive pixels
Member, wherein the photosensitive pixel adjacent in the photosensitive unit is opened by the grid baffle interval.
Specifically, on the substrate formed include the pel array being made of multiple photosensitive pixels photosensitive unit 11.
The rgb pixel array that pel array is made of multiple R pixels 111, multiple G pixels 112 and multiple B pixels 113.Pixel battle array
Each pixel in R, G, B pixel of row corresponds to a kind of color in RGB three primary colors, and the corresponding primary colors of each primary colors is logical
Road, the rank value with 0 to 256 rank, various colors can be formed by being combined tri- primary channels of RGB.
In step S304, lenticule unit is formed on photosensitive unit, the lenticule unit includes that multiple monochromes are micro-
Mirror, the monochrome lenticule are located on the photosensitive pixel, configure to make the light of particular color be incident on and the particular color
On the corresponding photosensitive pixel.
Specifically, lenticule unit 12 includes multiple monochromatic lenticules, and the monochrome lenticule is located at the photosensitive pixel
On, it configures to make the light of particular color be incident on the photosensitive pixel corresponding with the particular color.As shown in Figure 2, R
Lenticule 121 is located in R pixels 111, is used to that red light only to be made to pass through and is incident on R pixels 111；G lenticules 122 are located at
In G pixels 112, it is used to that green light only to be made to pass through and is incident on G pixels 112；B lenticule (not shown) is located at B pixels 123
On, it is used to that blue light only to be made to pass through and is incident on B pixels 113.Although including multiple foregoing illustrates lenticule unit 12
Monochromatic lenticule, however the present invention is not limited thereto, lenticule unit 12 can also be by multiple lenticules and multiple RGB filters groups
At in this case, RGB filters play the role of filtering light of particular color.
It is known to those skilled in the art that in the ideal situation, leakage current is not present in photosensitive pixel, however in practice,
Rambling movement is carried out due to being constantly present a part of electronics, this part has electronically formed leakage current.According to this hair
The photosensitive element of bright embodiment, since grid baffle 13 is formed by conductive material, so grid baffle 13 is used as positive terminal
Forward diode structure is constituted with the substrate as negative terminal so that grid baffle 13 receives to be produced in each photosensitive pixel
Raw leakage current is simultaneously directed to the substrate.Thus, generated leakage in each photosensitive pixel in rgb pixel array
Electric current is directed to the substrate by grid baffle 13, and the connection circuit being connected with external circuit is provided in the substrate,
For being guided leakage current to the external circuit from grid baffle 13, and the external circuit can be grounded, to leak electricity
Stream introduces ground.It thus avoids the leakage current in photosensitive pixel to flow in adjacent pixel, to reduce the fuzzy of imaging.
It is noted that it is known to those skilled in the art that in the ideal situation, photosensitive pixel does not produce in dark surrounds
Raw sensing electric current, however in practice, due to the limitation of impurities of materials and production technology, even if photosensitive pixel is in dark surrounds
In also generate small sensing electric current, i.e. dark current.In routine use, this dark current moment all exists photosensitive element, sense
Optical element is difficult to accurately calculate the size of dark current and remove it from sensing electric current, thus influences the accurate of imaging
Property.Photosensitive element prepared by the photosensitive element preparation method 300 of the embodiment of the present invention can accurately calculate entire photosensitive member
The dark current of part.Specifically, since grid baffle 13 is both non-reflective, sensing electric current is not generated yet, therefore grid baffle 13 is produced
Raw dark current is a constant that can be measured, can be with by comparing the material of the material and grid baffle 13 of photosensitive pixel
Show that there are proportionate relationships between dark current caused by the two, the value by calculating dark current caused by grid baffle 13 is
It can obtain the value of dark current caused by photosensitive pixel, and will be removed in its sensing electric current from photosensitive pixel and obtain practical sense
Survey electric current..In this case, the connection circuit being arranged in the substrate or the external circuit can be with AD converters
Connection, to calculate the value of dark current caused by grid baffle 13.
Further, since grid baffle 13 is non-reflective, so it can block each light-sensitive image in rgb pixel array
Stray light between element, it is photosensitive to ensure that the monochromatic light across RGB lenticules is accurately incident on corresponding RGB as much as possible
In pixel, the cross-interference issue of imaging is effectively improved.
It can be seen that photosensitive element preparation method 300 according to an embodiment of the invention by multiple photosensitive pixels it
Between grid baffle formed by non-reflective conductive material, to make generated leakage current in each photosensitive pixel flow to photosensitive member
The substrate of part and the stray light between each photosensitive pixel is blocked, thus, it is possible to guide leakage current caused by pixel to core
The substrate of piece avoids leakage current and flows in adjacent pixel, to reduce the fuzzy of imaging, and since grid baffle hinders
It has kept off stray light to be incident in the pixel of other colors, therefore the cross-interference issue of imaging can also be improved.At the same time it can also utilize
Grid baffle calculates the dark current in photosensitive element, to improve the accuracy of photosensitive element imaging.
Selectively, photosensitive element preparation method 300 according to an embodiment of the invention, which may also include, prepares bottom plate.Specifically
Ground, between step S301 and step S302, the step of increase prepares bottom plate：Bottom plate 14 is prepared on the substrate.Then, exist
Step S302 forms the grid baffle 13 with mesh shape on bottom plate 14.Bottom plate 14 is also by non-reflective conductive material shape
At.Since bottom plate 14 is non-reflective, it is possible to which reduction reflects stray light between each photosensitive pixel.As shown in Figure 2, bottom plate
14 connect with grid baffle 13, due to both being formed by conductive material, so, on the one hand, the leakage transmitted by grid baffle 13
Electric current can flow to the substrate by bottom plate 14, and on the other hand, generated leakage current can also lead in each photosensitive pixel
It crosses bottom plate 14 and flows to the substrate, thus further improve the efficiency of guiding leakage current, improve caused by due to leakage current
Image blur.
Preferably, grid baffle 13 is formed with bottom plate 14 by black silicon materials.However the present invention is not limited thereto, grid
Baffle 13 can also be formed with bottom plate 14 by semi-conducting materials such as germanium, selenium, boron, tellurium, antimony and their compounds.However this hair
Bright to be not limited to this, those skilled in the art can according to actual needs select grid baffle 13 and the material of bottom plate 14
It selects.
It should be noted that in the present specification, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including ... ", it is not excluded that including
There is also other identical elements in the process, method, article or equipment of the element.
It will be appreciated by those of skill in the art that the embodiments described herein can be soft with electronic hardware, computer
The combination of part or the two is realized, in order to clearly illustrate the interchangeability of hardware and software, has been pressed in the above description
Each exemplary composition and step are generally described according to function.These functions are implemented in hardware or software actually,
Specific application and design constraint depending on technical solution.Those skilled in the art can make each specific application
Differently realize described function, but such implementation should not be considered as beyond the scope of the present invention.
Those skilled in the art should understand that be：The above embodiments are only used to illustrate the technical solution of the present invention., and
It is non-that it is limited；Although present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can
With technical scheme described in the above embodiments is modified, either which part or all technical features are carried out etc.
With replacement；And these modifications or replacements, the range of it does not separate the essence of the corresponding technical solution claims of the present invention.
Claims (8)
1. a kind of photosensitive element, including：
Substrate；
Photosensitive unit is located in the substrate, includes the pel array being made of multiple photosensitive pixels；
Lenticule unit, including multiple monochromatic lenticules, the monochrome lenticule are located on the photosensitive pixel, configure to make spy
The light for determining color is incident on the photosensitive pixel corresponding with the particular color；And
Grid baffle, in the substrate and between being formed in the photosensitive pixel, wherein the grid baffle is by non-reflective
Conductive material formed and be formed mesh shape corresponding with the pel array, configuration makes each light-sensitive image
The leakage current generated in element flows to the substrate and blocks the stray light between each pixel；
Wherein, the grid baffle constitutes forward diode structure as positive terminal and the substrate as negative terminal,
So that the grid baffle receives the leakage current generated in each photosensitive pixel and is directed to the substrate.
2. photosensitive element according to claim 1, wherein
There are one the photosensitive pixels for setting in each lattice space that the grid baffle is formed.
3. photosensitive element according to claim 1, further includes：
Bottom plate is formed between the photosensitive unit and the grid baffle and the substrate by non-reflective conductive material.
4. photosensitive element according to claim 3, wherein
The bottom plate and the grid baffle are formed by black silicon materials.
5. a kind of photosensitive element preparation method, including：
Prepare substrate；
The grid baffle with mesh shape is formed on the substrate, wherein the grid baffle is by non-reflective conductive material
It is formed；
Formation includes the photosensitive unit for the pel array being made of multiple photosensitive pixels on the substrate, wherein the photosensitive list
The adjacent photosensitive pixel is opened by the grid baffle interval in member；And
Lenticule unit is formed on photosensitive unit, wherein the lenticule unit includes multiple monochromatic lenticules, the monochrome
Lenticule is located on the photosensitive pixel, configures to make the light of particular color be incident on the sense corresponding with the particular color
On light pixel,
Wherein, the grid baffle arrange-ment makes the leakage current generated in each photosensitive pixel flow to the substrate and hides
Keep off the stray light between each pixel；
Wherein, the grid baffle constitutes forward diode structure as positive terminal and the substrate as negative terminal,
So that the grid baffle receives the leakage current generated in each photosensitive pixel and is directed to the substrate.
6. photosensitive element preparation method according to claim 5, wherein
There are one the photosensitive pixels for setting in each lattice space that the grid baffle is formed.
7. photosensitive element preparation method according to claim 5, further includes：
Bottom plate is formed between the photosensitive unit and the grid baffle and the substrate, wherein the bottom plate is by non-reflective
Conductive material is formed.
8. photosensitive element preparation method according to claim 7, wherein
The bottom plate and the grid baffle are made of black silicon materials.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312205A (en) * | 2007-05-24 | 2008-11-26 | 索尼株式会社 | Solid-state imaging device and camera |
| CN101728407A (en) * | 2008-10-31 | 2010-06-09 | 索尼株式会社 | Solid-state imaging device, method for manufacturing the same, and electronic apparatus |
| CN103403869A (en) * | 2011-03-02 | 2013-11-20 | 索尼公司 | Solid state imaging device and fabrication method therefor, and electronic instrument |
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| JP2009206356A (en) * | 2008-02-28 | 2009-09-10 | Toshiba Corp | Solid-state imaging device and manufacturing method thereof |
| US8237206B2 (en) * | 2008-08-12 | 2012-08-07 | United Microelectronics Corp. | CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor |
| JP5857399B2 (en) * | 2010-11-12 | 2016-02-10 | ソニー株式会社 | Solid-state imaging device and electronic device |
| CN104465688A (en) * | 2014-12-23 | 2015-03-25 | 北京思比科微电子技术股份有限公司 | Micro lens structure of image sensor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312205A (en) * | 2007-05-24 | 2008-11-26 | 索尼株式会社 | Solid-state imaging device and camera |
| CN101728407A (en) * | 2008-10-31 | 2010-06-09 | 索尼株式会社 | Solid-state imaging device, method for manufacturing the same, and electronic apparatus |
| CN103403869A (en) * | 2011-03-02 | 2013-11-20 | 索尼公司 | Solid state imaging device and fabrication method therefor, and electronic instrument |
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