CN104867950A - Photosensitive element and preparation method thereof - Google Patents
Photosensitive element and preparation method thereof Download PDFInfo
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- CN104867950A CN104867950A CN201510162031.1A CN201510162031A CN104867950A CN 104867950 A CN104867950 A CN 104867950A CN 201510162031 A CN201510162031 A CN 201510162031A CN 104867950 A CN104867950 A CN 104867950A
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Abstract
The invention discloses a photosensitive element comprising a substrate; photosensitive units which are arranged on the substrate and comprise pixel arrays composed of multiple photosensitive pixels; micro-lens units which comprise multiple monochromatic micro-lenses which are arranged on the photosensitive pixels and configured for enabling light with specific colors to be incident to the photosensitive pixels corresponding to the specific colors; and a grid baffle plate which is arranged on the substrate and formed among the photosensitive pixels, wherein the grid baffle plate is formed by non-reflective conductive material and is formed into a grid shape corresponding to the pixel arrays and is configured for enabling leakage current generated by each photosensitive pixel to flow to the substrate and shade stray light among all the pixels.
Description
Technical field
The present invention relates to a kind of photo-sensitive cell and preparation method thereof, particularly relate to and a kind ofly can reduce photo-sensitive cell of image blur and crosstalk and preparation method thereof.
Background technology
The picture element density of current photo-sensitive cell chip is more and more higher, and there is limit due to the size of photo-sensitive cell, and therefore the size of chip is substantially fixing, causes each photosensitive pixel more and more less thus.Usually, always there is leakage current in the photosensitive pixel on chip, this leakage current can flow in adjacent pixel, causes image blur.In addition, lenticule can be there is above each photosensitive pixel, in theory, this lenticule only allows a certain monochromatic light to incide photosensitive pixel below it, but in practice, due to the restriction of lenticular production technology and photosensitive pixel size, all can there is a certain amount of stray light and incide on the photosensitive pixel of other color, thus cause imaging cross-interference issue.Meanwhile, as described above, because the pixel on photo-sensitive cell chip has more and more less trend, stray light also more easily incides on the photosensitive pixel of other color, and imaging cross-interference issue is more and more serious thus.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the present invention is to provide and a kind ofly can reduce photo-sensitive cell of fuzzy and crosstalk between photosensitive pixel and preparation method thereof substantially.
According to an aspect of the present invention, a kind of photo-sensitive cell is provided, comprises: substrate; Photosensitive unit, is positioned in described substrate, comprises the pel array be made up of multiple photosensitive pixel; Lenticule unit, comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color; And grid baffle plate, described substrate is formed between described photosensitive pixel, wherein said grid baffle plate is formed by opaque electric conducting material and is formed the mesh shape corresponding with described pel array, and configuration makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.
According to a further aspect in the invention, a kind of photo-sensitive cell preparation method is provided, comprises: preparation substrate; Form the grid baffle plate with mesh shape on the substrate, wherein said grid baffle plate is formed by opaque electric conducting material; Form the photosensitive unit comprising the pel array be made up of multiple photosensitive pixel on the substrate, described photosensitive pixel adjacent in wherein said photosensitive unit is opened by described grid baffle interval; And on photosensitive unit, form lenticule unit, wherein, described lenticule unit comprises multiple monochromatic lenticule, described monochromatic lenticule is positioned on described photosensitive pixel, configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color, wherein, described grid baffle arrange-ment makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.
Technique effect
As can be seen here, photo-sensitive cell and preparation method thereof by forming grid baffle plate by opaque electric conducting material between multiple photosensitive pixel according to an embodiment of the invention, thus make the leakage current produced in each photosensitive pixel flow to the substrate of photo-sensitive cell and the stray light blocked between each pixel, the leakage current that pixel produces can be guided to the substrate of chip thus, avoiding leakage current flows in adjacent pixel, thus decrease the fuzzy of imaging, and due to grid baffle, stray light incides in the pixel of other color, therefore the cross-interference issue of imaging can also be improved.
Accompanying drawing explanation
More fully can understand above-mentioned and other object, advantage and feature of the present invention in conjunction with the drawings, in the accompanying drawings:
Fig. 1 is the vertical view that photo-sensitive cell is according to an embodiment of the invention shown;
Fig. 2 is the end view that photo-sensitive cell is according to an embodiment of the invention shown; And
Fig. 3 is the flow chart of the preparation method that photo-sensitive cell is according to an embodiment of the invention shown.
Accompanying drawing is intended to describe exemplary embodiment of the present invention, and should not be interpreted as limiting the scope of the invention.Unless explicitly stated otherwise, otherwise accompanying drawing should not be considered as drawing in proportion.
Embodiment
Hereinafter, the preferred embodiments of the present invention are described in detail with reference to the accompanying drawings.In the present description and drawings, will element identical substantially and function be used the same reference numerals to represent, and will the duplicate explanation to these elements and function be omitted.In addition, for clarity and brevity, the explanation for function known in the art and structure can be omitted.
With reference to the accompanying drawings to a preferred embodiment of the present invention will be described in detail.
First see figures.1.and.2 and photo-sensitive cell is according to an embodiment of the invention described in detail.Fig. 1 is the vertical view that photo-sensitive cell 1 is according to an embodiment of the invention shown.Fig. 2 is the end view that photo-sensitive cell 1 is according to an embodiment of the invention shown.Photo-sensitive cell 1 can be applied in such as video camera, camera, the first-class electronic equipment of shooting according to an embodiment of the invention.
As shown in Figures 1 and 2, photo-sensitive cell 1 comprises substrate (not shown), photosensitive unit 11, lenticule unit 12 and grid baffle plate 13.
Substrate is positioned at the bottom of photo-sensitive cell 1, configuration carries other assembly of photo-sensitive cell 1, can be furnished with data wire, holding wire, power line etc. in the substrate, they transmit data for each pixel in the pel array for photo-sensitive cell 1, provide drive singal and electric power etc.
Photosensitive unit 11 is positioned in described substrate, and it comprises the pel array be made up of multiple photosensitive pixel.Specifically, as shown in fig. 1, the rgb pixel array that is made up of multiple R pixel 111, multiple G pixel 112 and multiple B pixel 113 of pel array.A kind of color in the equal corresponding RGB three primary colors of each pixel in R, G, B pixel of pel array, the all corresponding primary channel of each primary colors, it has the rank value on 0 to 256 rank, can form various color by RGB tri-primary channel are carried out combination.
Lenticule unit 12 comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color.Specifically, as shown in Figure 2, R lenticule 121 is positioned in R pixel 111, and it is for only making red light pass and inciding R pixel 111; G lenticule 122 is positioned in G pixel 112, and it is for only making green light pass and inciding G pixel 112; B lenticule (not shown) is positioned in B pixel 123, and it is for only making blue light pass and inciding B pixel 113.Although foregoing illustrates lenticule unit 12 to comprise multiple monochromatic lenticule, but the present invention is not limited to this, lenticule unit 12 can also be made up of multiple lenticule and multiple RGB filter, and in this case, RGB filter plays the effect of filtering light of particular color.
Grid baffle plate 13 is in described substrate and be formed between described photosensitive pixel, wherein said grid baffle plate is formed by opaque electric conducting material and is formed the mesh shape corresponding with described pel array, and configuration makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.Specifically, as shown in fig. 1, grid baffle plate 13 is formed the mesh shape corresponding with rgb pixel array, is all formed with grid baffle plate 13 between any two adjacent photosensitive pixels.Grid baffle plate 13 is formed by opaque electric conducting material.Preferably, realize the effect of blocking stray light better for making grid baffle plate 13, the height of grid baffle plate 13 should a little more than the height of photosensitive pixel, in this case, R, G, B lenticule is formed in the top of corresponding photosensitive pixel, and lenticular edge and grid baffle plate 13 adjoin.Selectively, R, G, B lenticule also can be formed on corresponding photosensitive pixel, and the top of grid baffle plate 13 is higher than lenticular edge.The width of grid baffle plate 13 is preferably 10% to 20% of the width of photosensitive pixel.But the present invention is not limited to this, those skilled in the art can select, as long as can realize blocking stray light between adjacent pixels the height of grid baffle plate 13 and width according to material of manufacturing process, grid baffle plate 13 etc.
It is known to those skilled in the art that in the ideal situation, in photosensitive pixel, there is not leakage current, but in practice, carry out rambling motion owing to always there is a part of electronics, therefore this part electronics defines leakage current.Photo-sensitive cell according to an embodiment of the invention, because grid baffle plate 13 is formed by electric conducting material, so grid baffle plate 13 forms forward diode structure as positive terminal with as the described substrate of negative terminal, leakage current grid baffle plate 13 being received produce in each photosensitive pixel described substrate of being led.Thus, the leakage current produced in each photosensitive pixel in rgb pixel array is directed to described substrate by grid baffle plate 13, and guiding to external circuit by described substrate, the leakage current that thus avoid in photosensitive pixel flows in adjacent pixel, thus decreases the fuzzy of imaging.It is worth mentioning that, be provided with the connecting circuit be connected with described external circuit in described substrate, for leakage current is guided to described external circuit from grid baffle plate 13, and described external circuit can ground connection, thus leakage current is introduced ground.
It is worth mentioning that, it be known to those skilled in the art that in the ideal situation, photosensitive pixel does not produce current sensor in dark surrounds, but in practice, due to the restriction of impurities of materials and production technology, even if photosensitive pixel also produces small current sensor in dark surrounds, i.e. dark current.Photo-sensitive cell is in routine use, and this dark current moment all exists, and photo-sensitive cell is difficult to accurately calculate the size of dark current and it is removed from current sensor, has influence on the accuracy of imaging thus.Can the dark current of the whole photo-sensitive cell of accurate Calculation by the grid baffle plate 13 of embodiments of the invention.Particularly, because grid baffle plate 13 is neither reflective, also current sensor is not generated, therefore the dark current that grid baffle plate 13 produces is a constant that can measure, by the material of the material and grid baffle plate 13 that compare photosensitive pixel, can draw to there is proportionate relationship between the two dark current produced, then the value by calculating the dark current that grid baffle plate 13 produces can draw the value of the dark current that photosensitive pixel produces, and it is removed from the current sensor of photosensitive pixel and draws actual sensed electric current, the accuracy of photo-sensitive cell 1 imaging can be improved thus.In this case, the described connecting circuit arranged in described substrate or described external circuit can be connected with AD converter, to calculate the value of the dark current that grid baffle plate 13 produces.
In addition, because grid baffle plate 13 is opaque, so the stray light that it can block in rgb pixel array between each photosensitive pixel, thus ensure as much as possible to incide exactly on corresponding RGB photosensitive pixel through the lenticular monochromatic light of RGB, effectively improve the cross-interference issue of imaging.
As can be seen here, photo-sensitive cell 1 by forming grid baffle plate 13 by opaque electric conducting material between multiple photosensitive pixel according to an embodiment of the invention, thus make the leakage current produced in each photosensitive pixel flow to the substrate of photo-sensitive cell 1 and the stray light blocked between each photosensitive pixel, the leakage current that photosensitive pixel produces can be guided to the substrate of chip thus, avoiding leakage current flows in adjacent pixel, thus decrease the fuzzy of imaging, and due to grid baffle, stray light incides in the pixel of other color, therefore the cross-interference issue of imaging can also be improved.Meanwhile, grid baffle plate 13 can also be utilized to calculate dark current in photo-sensitive cell 1, thus improve the accuracy of photo-sensitive cell 1 imaging.
Selectively, as shown in Figure 2, photo-sensitive cell 1 also can comprise base plate 14 according to an embodiment of the invention.Base plate 14 is at photosensitive unit 11 with between grid baffle plate 13 and described substrate.Base plate 14 is also formed by opaque electric conducting material.Because base plate 14 is not reflective, so reflect stray light between each photosensitive pixel can be reduced.As shown in Figure 2, base plate 14 is connected with grid baffle plate 13, because both are formed by electric conducting material, so on the one hand, the leakage current transmitted by grid baffle plate 13 can flow to described substrate by base plate 14, on the other hand, the leakage current produced in each photosensitive pixel also can flow to described substrate by base plate 14, further increases the efficiency guiding leakage current thus, improves the image blur that due to leakage current causes.
Preferably, grid baffle plate 13 and base plate 14 are formed by black silicon material.But the present invention is not limited to this, grid baffle plate 13 and base plate 14 can also be formed by semi-conducting materials such as germanium, selenium, boron, tellurium, antimony and their compounds.But the present invention is not limited to this, those skilled in the art can select the material of grid baffle plate 13 and base plate 14 according to actual needs.
Referring to Fig. 3, photo-sensitive cell preparation method 300 is according to an embodiment of the invention described in detail.For convenience of description, each part of the photo-sensitive cell 1 shown in composition graphs 1 and Fig. 2 is described photo-sensitive cell preparation method 300, therefore will omits the detailed description to each part of photo-sensitive cell 1.
As shown in Figure 3, in step S301, preparation substrate.Substrate is positioned at the bottom of photo-sensitive cell 1 and carries other assembly of photo-sensitive cell 1, can be furnished with data wire, holding wire, power line etc. in the substrate, they transmit data for each pixel in the pel array for photo-sensitive cell 1, provide drive singal and electric power etc.
In step S302, form the grid baffle plate with mesh shape on the substrate, wherein grid baffle plate is formed by opaque electric conducting material.
Particularly, grid baffle plate 13 is formed on the substrate by opaque electric conducting material, and grid baffle plate 13 is formed between each adjacent photosensitive pixel, wherein grid baffle plate 13 is formed the mesh shape corresponding with described pel array, thus makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.As shown in fig. 1, grid baffle plate 13 is formed the mesh shape corresponding with rgb pixel array, is all formed with grid baffle plate 13 between any two adjacent photosensitive pixels.Grid baffle plate 13 is formed by the opaque electric conducting material that such as silicon or silicon compound are such.Preferably, realize the effect of blocking stray light better for making grid baffle plate 13, the height of grid baffle plate 13 should a little more than the height of photosensitive pixel, in this case, R, G, B lenticule is formed in the top of corresponding photosensitive pixel, and lenticular edge and grid baffle plate 13 adjoin.Selectively, R, G, B lenticule also can be formed on corresponding photosensitive pixel, and the top of grid baffle plate 13 is higher than lenticular edge.The width of grid baffle plate 13 is preferably 10% to 20% of the width of photosensitive pixel, but the present invention is not limited to this, those skilled in the art can select, as long as can realize blocking stray light between adjacent pixels the height of grid baffle plate 13 and width according to material of manufacturing process, grid baffle plate 13 etc.Grid baffle plate 13 configuration makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.
In step S303, form the photosensitive unit comprising the pel array be made up of multiple photosensitive pixel on the substrate, described photosensitive pixel adjacent in wherein said photosensitive unit is opened by described grid baffle interval.
Particularly, the photosensitive unit 11 comprising the pel array be made up of multiple photosensitive pixel is formed on the substrate.The rgb pixel array that pel array is made up of multiple R pixel 111, multiple G pixel 112 and multiple B pixel 113.A kind of color in the equal corresponding RGB three primary colors of each pixel in R, G, B pixel of pel array, the all corresponding primary channel of each primary colors, it has the rank value on 0 to 256 rank, can form various color by RGB tri-primary channel are carried out combination.
In step S304, photosensitive unit is formed lenticule unit, described lenticule unit comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color.
Particularly, lenticule unit 12 comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color.As shown in Figure 2, R lenticule 121 is positioned in R pixel 111, and it is for only making red light pass and inciding R pixel 111; G lenticule 122 is positioned in G pixel 112, and it is for only making green light pass and inciding G pixel 112; B lenticule (not shown) is positioned in B pixel 123, and it is for only making blue light pass and inciding B pixel 113.Although foregoing illustrates lenticule unit 12 to comprise multiple monochromatic lenticule, but the present invention is not limited to this, lenticule unit 12 can also be made up of multiple lenticule and multiple RGB filter, and in this case, RGB filter plays the effect of filtering light of particular color.
It is known to those skilled in the art that in the ideal situation, in photosensitive pixel, there is not leakage current, but in practice, carry out rambling motion owing to always there is a part of electronics, therefore this part electronics defines leakage current.Photo-sensitive cell according to an embodiment of the invention, because grid baffle plate 13 is formed by electric conducting material, so grid baffle plate 13 forms forward diode structure as positive terminal with as the described substrate of negative terminal, leakage current grid baffle plate 13 being received produce in each photosensitive pixel described substrate of being led.Thus, the leakage current produced in each photosensitive pixel in rgb pixel array is directed to described substrate by grid baffle plate 13, the connecting circuit be connected with external circuit is provided with in described substrate, for leakage current is guided to described external circuit from grid baffle plate 13, and described external circuit can ground connection, thus leakage current is introduced ground.The leakage current that thus avoid in photosensitive pixel flows in adjacent pixel, thus decreases the fuzzy of imaging.
It is worth mentioning that, it be known to those skilled in the art that in the ideal situation, photosensitive pixel does not produce current sensor in dark surrounds, but in practice, due to the restriction of impurities of materials and production technology, even if photosensitive pixel also produces small current sensor in dark surrounds, i.e. dark current.Photo-sensitive cell is in routine use, and this dark current moment all exists, and photo-sensitive cell is difficult to accurately calculate the size of dark current and it is removed from current sensor, has influence on the accuracy of imaging thus.The photo-sensitive cell prepared by photo-sensitive cell preparation method 300 of embodiments of the invention, can the dark current of the whole photo-sensitive cell of accurate Calculation.Particularly, because grid baffle plate 13 is neither reflective, also current sensor is not generated, therefore the dark current that grid baffle plate 13 produces is a constant that can measure, by the material of the material and grid baffle plate 13 that compare photosensitive pixel, can draw to there is proportionate relationship between the two dark current produced, the value of the dark current that photosensitive pixel produces can be drawn by the value calculating the dark current that grid baffle plate 13 produces, and it is removed from the current sensor of photosensitive pixel and draws actual sensed electric current.。In this case, the described connecting circuit arranged in described substrate or described external circuit can be connected with AD converter, to calculate the value of the dark current that grid baffle plate 13 produces.
In addition, because grid baffle plate 13 is opaque, so the stray light that it can block in rgb pixel array between each photosensitive pixel, thus ensure as much as possible to incide exactly on corresponding RGB photosensitive pixel through the lenticular monochromatic light of RGB, effectively improve the cross-interference issue of imaging.
As can be seen here, photo-sensitive cell preparation method 300 by forming grid baffle plate by opaque electric conducting material between multiple photosensitive pixel according to an embodiment of the invention, thus make the leakage current produced in each photosensitive pixel flow to the substrate of photo-sensitive cell and the stray light blocked between each photosensitive pixel, the leakage current that pixel produces can be guided to the substrate of chip thus, avoiding leakage current flows in adjacent pixel, thus decrease the fuzzy of imaging, and due to grid baffle, stray light incides in the pixel of other color, therefore the cross-interference issue of imaging can also be improved.Meanwhile, the dark current in grid baffle plate calculating photo-sensitive cell can also be utilized, thus improve the accuracy of photo-sensitive cell imaging.
Selectively, photo-sensitive cell preparation method 300 also can comprise and prepare base plate according to an embodiment of the invention.Particularly, between step S301 and step S302, increase the step preparing base plate: prepare base plate 14 on the substrate.Then, in step S302, base plate 14 forms the grid baffle plate 13 with mesh shape.Base plate 14 is also formed by opaque electric conducting material.Because base plate 14 is not reflective, so reflect stray light between each photosensitive pixel can be reduced.As shown in Figure 2, base plate 14 is connected with grid baffle plate 13, because both are formed by electric conducting material, so on the one hand, the leakage current transmitted by grid baffle plate 13 can flow to described substrate by base plate 14, on the other hand, the leakage current produced in each photosensitive pixel also can flow to described substrate by base plate 14, further increases the efficiency guiding leakage current thus, improves the image blur that due to leakage current causes.
Preferably, grid baffle plate 13 and base plate 14 are formed by black silicon material.But the present invention is not limited to this, grid baffle plate 13 and base plate 14 can also be formed by semi-conducting materials such as germanium, selenium, boron, tellurium, antimony and their compounds.But the present invention is not limited to this, those skilled in the art can select the material of grid baffle plate 13 and base plate 14 according to actual needs.
It should be noted that, in this manual, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
Those skilled in the art can recognize, embodiment disclosed herein can realize with electronic hardware, computer software or the combination of the two, in order to the interchangeability of hardware and software is clearly described, generally describe composition and the step of each example in the above description according to function.These functions perform with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.Those skilled in the art can use distinct methods to realize described function to each specifically should being used for, but this realization should not thought and exceeds scope of the present invention.
Those skilled in the art should understand that: above each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those skilled in the art can modify to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of claims of the present invention.
Claims (10)
1. a photo-sensitive cell, comprising:
Substrate;
Photosensitive unit, is positioned in described substrate, comprises the pel array be made up of multiple photosensitive pixel;
Lenticule unit, comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color; And
Grid baffle plate, described substrate is formed between described photosensitive pixel, wherein said grid baffle plate is formed by opaque electric conducting material and is formed the mesh shape corresponding with described pel array, and configuration makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.
2. photo-sensitive cell according to claim 1, wherein
A described photosensitive pixel is provided with in each lattice space that described grid baffle plate is formed.
3. photo-sensitive cell according to claim 1, also comprises:
Base plate, at described photosensitive unit with between described grid baffle plate and described substrate, is formed by opaque electric conducting material.
4. photo-sensitive cell according to claim 1, wherein
Described grid baffle plate forms forward diode structure as positive terminal with as the described substrate of negative terminal, makes the leakage current that produces in each described photosensitive pixel of described grid baffle plate reception and described substrate of being led.
5. photo-sensitive cell according to claim 3, wherein
Described base plate and described grid baffle plate are formed by black silicon material.
6. a photo-sensitive cell preparation method, comprising:
Preparation substrate;
Form the grid baffle plate with mesh shape on the substrate, wherein said grid baffle plate is formed by opaque electric conducting material;
Form the photosensitive unit comprising the pel array be made up of multiple photosensitive pixel on the substrate, described photosensitive pixel adjacent in wherein said photosensitive unit is opened by described grid baffle interval; And
Photosensitive unit is formed lenticule unit, and wherein, described lenticule unit comprises multiple monochromatic lenticule, and described monochromatic lenticule is positioned on described photosensitive pixel, and configuration makes the light of particular color incide on the described photosensitive pixel corresponding with described particular color,
Wherein, described grid baffle arrange-ment makes the leakage current produced in each described photosensitive pixel flow to described substrate and block the stray light between each pixel.
7. photo-sensitive cell preparation method according to claim 6, wherein
A described photosensitive pixel is provided with in each lattice space that described grid baffle plate is formed.
8. photo-sensitive cell preparation method according to claim 6, also comprises:
Form base plate at described photosensitive unit with between described grid baffle plate and described substrate, wherein said base plate is formed by opaque electric conducting material.
9. photo-sensitive cell preparation method according to claim 6, wherein
Described grid baffle plate forms forward diode structure as positive terminal with as the described substrate of negative terminal, makes the leakage current that produces in each described photosensitive pixel of described grid baffle plate reception and described substrate of being led.
10. photo-sensitive cell preparation method according to claim 8, wherein
Described base plate and described grid baffle plate are made up of black silicon material.
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| CN103403869A (en) * | 2011-03-02 | 2013-11-20 | 索尼公司 | Solid state imaging device and fabrication method therefor, and electronic instrument |
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