CN104851936B - A kind of anti-artefact structure of flat panel detector and preparation method thereof - Google Patents
A kind of anti-artefact structure of flat panel detector and preparation method thereof Download PDFInfo
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- CN104851936B CN104851936B CN201510199012.6A CN201510199012A CN104851936B CN 104851936 B CN104851936 B CN 104851936B CN 201510199012 A CN201510199012 A CN 201510199012A CN 104851936 B CN104851936 B CN 104851936B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000011241 protective layer Substances 0.000 claims abstract description 76
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- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000007598 dipping method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 239000007788 liquid Substances 0.000 abstract description 14
- 238000003745 diagnosis Methods 0.000 abstract description 5
- 238000009434 installation Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 239000010409 thin film Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
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- 239000010951 brass Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of anti-artefact structure of flat panel detector and preparation method thereof, including step：First there is provided a substrate, in substrate surface formation protective layer；Then, lead layer is plated in the protective layer.Make to form the anti-artefact structure of flat panel detector using the preparation method of invention, on the one hand by good toughness and the suitable substrate of density is used as supporter, be easy to be processed into big sheet material, be relatively easy to carry out installation operation；On the other hand by protective layer protection group bottom, prevent that liquid lead causes to corrode to copper in manufacturing process.The anti-artefact structure of flat panel detector that the present invention is provided can effectively prevent back scattering, so as to form the higher image of quality, help doctor to make a definite diagnosis focus.
Description
Technical field
The present invention relates to medical detection field, more particularly to a kind of anti-artefact structure of flat panel detector and its making side
Method.
Background technology
Since First flat panel detector (Flat Panel Detector) equipment being released from nineteen ninety-five RSNA, with
In recent years flat board Detection Techniques take off, in the research and development and production process of flat panel detector, flat board Detection Techniques
Directly or indirectly two class can be divided into.Indirect FPD structure is mainly added by scintillator or luminescent coating to be made with photodiode
Amorphous silicon layer (amorphous Silicon, a-Si) adds thin film semiconductor's array (Thin Film Transistor again
Array, TFT) constitute.
The imaging process of non-crystalline silicon X-ray flat panel detector needs experience " X-ray " to arrive " visible ray ", then " charge pattern
Picture " arrives the imaging transfer process of " digital picture ", is that a kind of X ray image using amorphous silicon photodiodes array as core is visited
Survey device.X-ray photon is converted to visible ray by the scintillator or luminescent coating of detector under x-ray bombardment, then by with
The amorphous silicon array of photodiode effect is changed into electric image signal, is integrated and read and A/D conversion by peripheral circuit, so as to obtain
Obtain digitized image.Amorphous silicon flat-panel detectors have image taking speed fast, good space and density resolution, high s/n ratio,
The remarkable advantages such as Direct Digital output.
But, when in use, X-ray is passed through after the photosensitive layer of flat panel detector Amorphous silicon flat-panel detectors, can get to device
On part, device will be such that some devices are shown on image the difference of the reflex behavior of X-ray, form artifact, be doctor
Make accurately diagnosis and bring difficulty, easily cause mistaken diagnosis.
For solve the problems, such as Amorphous silicon flat-panel detectors back scattering formed artifact, most producers overleaf pad lead rubber or
Person's sheet lead.Lead is good to X-ray absorption, belongs to high desnity metal, is difficult to disperse in rubber.But over time, hold
Easily it is enriched with, ageing of rubber, the absorption and scattering to X-ray become uneven, anti-back scattering artifact effect is bad.Therefore,
Can be more preferable using the anti-artifact effect of pure sheet lead, but sheet lead material is soft, easily damaged, operation during to assembling requires high.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of anti-artifact knot of flat panel detector
Structure and preparation method thereof, it is soft for solving sheet lead material in the prior art, not the problem of easy processing and installation.
In order to achieve the above objects and other related objects, the present invention provides a kind of making of the anti-artefact structure of flat panel detector
Method, the preparation method at least includes：
1) substrate is provided, in substrate surface formation protective layer；
2) lead layer is plated in the protective layer.
It is used as a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the step 1) in
The step of including cleaning the substrate before forming protective layer.
As a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, in the step 1)
And the step 2) between the step of be additionally included in protective layer coating scaling powder layer.
It is used as a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the preparation method
Including：First, the substrate up and down and circumferential surface formation clad substrates protective layer；Then, in the protective layer
Up and down and circumferential surface coating scaling powder layer；Last lead plating, during lead plating, the scaling powder leaves the protective layer, from
And the protective layer up and down and circumferential surface formation lead layer.
As a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the substrate is
Copper, nickel or alloy.
It is used as a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the step 1) in
In substrate surface formation protective layer by the way of plating.
As a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the protective layer is
Nickel dam.
It is used as a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the step 2) in
By the way of hot dipping on the plated surface of the protective layer lead layer, the temperature range of hot dipping is 400 DEG C~450 DEG C.
It is used as a kind of scheme of optimization of the preparation method of the anti-artefact structure of flat panel detector of the present invention, the thickness of the lead layer
Degree scope is 0.05~0.1mm.
The present invention also provides a kind of flat panel detector anti-artefact structure, and the anti-artifact structure fabrication is detected in the flat board
The device back side, the anti-artefact structure includes：Substrate, the protective layer for being coated on the substrate surface, are plated in the protective layer
Lead layer.
As a kind of scheme of optimization of the anti-artefact structure of flat panel detector of the present invention, the protective layer, lead layer from it is inner it
Whole substrate is coated successively outside.
As a kind of scheme of optimization of the anti-artefact structure of flat panel detector of the present invention, a surface of the substrate from
Protective layer and lead layer are sequentially formed on down.
As a kind of scheme of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of the substrate is
0.2~0.4mm.
As a kind of scheme of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of the protective layer is
0.5~1.5 μm.
As a kind of scheme of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of the lead layer is
0.05~0.1mm
As described above, anti-artefact structure of flat panel detector of the present invention and preparation method thereof, including step：First there is provided
One substrate, in substrate surface formation protective layer；Then, lead layer is plated in the protective layer.Using the making side of invention
Legal system forms the anti-artefact structure of flat panel detector, on the one hand by good toughness and the suitable substrate of density is used as supporter, just
In being processed into big sheet material, installation operation is relatively easy to；On the other hand by protective layer protection group bottom, liquid in manufacturing process is prevented
Lead causes to corrode to copper.The anti-artefact structure of flat panel detector that the present invention is provided can effectively prevent back scattering, so as to form matter
The higher image of amount, helps doctor to make a definite diagnosis focus.
Brief description of the drawings
Fig. 1 is the preparation method schematic flow sheet of the anti-artefact structure of flat panel detector of the present invention.
Fig. 2 illustrates for the underlying structure provided in the embodiment of preparation method one of the anti-artefact structure of flat panel detector of the present invention
Figure.
Fig. 3 protects to be formed in the embodiment of preparation method one of the anti-artefact structure of flat panel detector of the present invention in substrate surface
The structural representation of layer.
Fig. 4 helps to be applied in the embodiment of preparation method one of the anti-artefact structure of flat panel detector of the present invention in protective layer
The structural representation of welding flux layer.
Fig. 5 for the anti-artefact structure of flat panel detector of the present invention the embodiment of preparation method one in formed in scaling powder layer surface
The structural representation of lead layer.
Fig. 6 shows for the anti-artefact structure formed in the anti-another embodiment of artifact construction manufacturing method of flat panel detector of the present invention
It is intended to.
Component label instructions
S1~S2 steps
1 substrate
2 protective layers
3 scaling powders layer
4 lead layers
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
Flat panel detector (Flat Panel Detector, FPD) is that the imaging detection being made up of precise electronic component is set
It is standby, the picture signal generated after radioactive ray transillumination object can be converted into being easy to store and handling by planar array detector, and
And meet the digital picture of certain standard.
The structure of flat panel detector is sandwich construction, mainly by scintillator (mainly having cesium iodide CsI at present) or fluorescence
Body (gadolinium oxysulfide GdSO) layer adds the amorphous silicon layer (amorphous Silicon, a-Si) acted on photodiode to add again
Tft array constitutes flat board sounder.The scintillator or luminescent coating of such flat panel detector can penetrate X after X-ray exposure
Linear light is converted to visible ray, will be seen that light is converted to electric signal with 2 D photoelectric conversion equipment, passes through thin film transistor (TFT) array
The digitized signal of each pixel is read and is communicated to the image processing system of computer and is integrated into X ray image, is finally obtained
Obtain Digital Image Display.
The anti-artifact structure fabrication of flat panel detector is at the back side of flat panel detector.Typically, flat panel detector has front
And the back side, wherein, front is the incident one side of X-ray, and the back side is the another side relative with front.
As shown in figure 1, the present invention provides a kind of preparation method of the anti-artefact structure of flat panel detector, the preparation method bag
Include following steps：
Step S1 is first carried out there is provided a substrate, in substrate surface formation protective layer.
Selection good toughness and density suitable material are used as base material.If the toughness that base material has had, holds
Easily cut, and the substrate has high resistance to deformability, it is not easy to break；If base material density is suitable, have
High X-ray absorption performance, makes flat panel detector have more preferable false proof image ability.
In line with mentioned above principle, substrate described in the metals such as copper, nickel can be selected, can also select any suitable metal or
Alloy is used as substrate, such as steel alloy.In the present embodiment, prioritizing selection copper metal is used as substrate.
The step of needing to clean the substrate surface before protective layer is formed, it is usual using surfactant come
Remove greasy dirt, rusty stain, dust or the other impurities of substrate surface.
The thickness range of the substrate can be selected as 0.2~0.4mm, and in the present embodiment, the thickness of the substrate is temporarily selected
For 0.3mm.
The protective layer is used for protecting the substrate, during follow-up lead plating, prevents that dissolving of the liquid lead to substrate is rotten
Erosion.It is therefore desirable to which the protective layer has higher fusing point, and it will not be dissolved at high temperature by liquid lead.In the present embodiment,
Selection nickel dam protects the substrate as protective layer, and certainly, in other embodiments, the protective layer can also select other
Suitable material.The thickness range of the protective layer is controlled in 0.5~1.5 μ m, in the present embodiment, the protective layer
Thickness is preferably 1 μm.
As a kind of currently preferred embodiment, scaling powder layer is applied in the protective layer, after reduction
Continue the surface tension of lead layer to be plated, contribute to liquid lead in protective layer flowing, extension and infiltrate, so that in protective layer
Form lead layer in uniform thickness.The scaling powder layer choosing is selected as organic mixture, is in a liquid state, mostly rosin mixture.
Then step S2 is performed, lead layer is plated in the protective layer.
Can by the way of hot dipping on the plated surface of the protective layer lead layer, the temperature range of hot dipping for 400 DEG C~
450℃.Specifically, the substrate to form matcoveredn and scaling powder is clamped using lifting screw, is placed in liquid lead, then it is even
Speed is pulled out, and room temperature is cooled to afterwards, so as to can plate 0.05~0.1mm lead layer on the surface of the protective layer.
It should be noted that during lead is soaked, scaling powder layer can enable lead fully be covered in protective layer,
Simultaneously under the hot conditions of liquid lead, the scaling powder layer can be volatilized out protective layer, or scaling powder layer can be by liquid
State lead is arranged.
The present invention further elucidates the refer to the attached drawing following by corresponding case study on implementation.
First, the brass or red metal coiled material of international thickness calibration specification are commercially bought, coiled material is cut into and compares target
The bigger sheet material of size, and sheet material is flattened, the sheet material is as substrate 1, and the substrate 1 is as shown in Figure 2.Wherein, target size
The size of anti-artefact structure to be installed on flat panel detector is referred to, it is convenient when the additional position in four sides is for follow-up lead plating
Clamp substrate 1, it is ensured that can plate lead on anti-artefact structure to be installed.
Then, copper coin (i.e. substrate 1) surface is cleaned with surfactant, then in about 1 μm of the electroplating surface of the copper coin
Nickel, the nickel dam is as protective layer 2, and the nickel dam is as shown in Figure 3.Specifically the process of electronickelling is：Using substrate to be electroplated as
Negative electrode, using nickel metal as anode, the solution (such as nickel sulfate) containing nickel ion applies between a cathode and an anode as electroplate liquid
Certain voltage, through after a while, then one layer of nickel protection layer 2 can be formed on the surface of substrate 1.
Then, as shown in figure 4, in 2 surface of nickel protection layer coating rosin scaling powder layer 3.
Then (do not illustrated) there is provided a container, lead metal is placed in the container, and heat the container to 400
DEG C, the lead metal in container is melted into liquid lead liquid, help weldering using lifting screw (not illustrated) clamping coating afterwards
The substrate 1 of oxidant layer 3 is simultaneously immersed in liquid lead, is at the uniform velocity pulled out afterwards, and scaling powder layer 3 volatilizees during leaching lead, the protective layer 2
Surface heat plating last layer lead layer 4, is made composite board as shown in Figure 5 after cooling.
Finally, the composite board is flattened, and composite board is cut into target size, so as to form flat panel detector
Anti- artefact structure.Follow-up to carry out other processing again, such as punching on anti-artefact structure enables the structure to be detected installed in flat board
The back side of device.
It should be noted that in the present embodiment, as shown in Figure 2-5, the substrate 1 up and down and circumferential surface will
Form the protective layer 2 of clad substrates；Then, the protective layer 2 up and down and circumferential surface coating scaling powder layer 3；Finally plate
Lead, during lead plating, the scaling powder leafing opens the protective layer so that the protective layer 2 up and down and around
Surface forms lead layer 4.From accompanying drawing 2~5 as can be seen that the protective layer 2, lead layer 4 are to coat whole substrate successively outside inner
1。
And in another embodiment, as shown in fig. 6, can also only a surface of the substrate 1 from bottom to top according to
Secondary formation protective layer 2 and lead layer 4.Wherein, when mounted, the lead layer 4 is directly contacted with the back side of flat panel detector.
As it can be seen in figures 5 and 6, the present invention also provides a kind of flat panel detector anti-artefact structure, the anti-artifact structure fabrication
The back side (is not illustrated) in the flat panel detector, and the anti-artefact structure at least includes：Substrate 1, formation are in the substrate 1
The protective layer 2 on surface and the lead layer 4 for being plated in the surface of protective layer 2.
The flat panel detector includes：It is photosensitive layer that scintillator (mainly having cesium iodide CsI at present) or fluorophor are constituted, non-
Crystal silicon layer and TFT transistor arrays.The photosensitive layer, amorphous silicon layer and TFT transistor arrays formation laminated construction make
In on one of surface (i.e. positive) of a glass plate.The anti-artefact structure is then made in another table of the glass plate
On face (i.e. the back side).
In one embodiment, as shown in figure 5, the protective layer 2, lead layer 4 coat whole substrate 1 outside inner successively.
In another embodiment, as shown in fig. 6, sequentially forming protective layer from bottom to top on a surface of the substrate 1
2 and lead layer 4.
As an example, the thickness range of the substrate 1 is 0.2~0.4mm, the thickness range of the protective layer 2 for 0.5~
1.5 μm, the thickness range of the lead layer 4 is 0.05~0.1mm.
In summary, the present invention provides a kind of anti-artefact structure of flat panel detector and preparation method thereof, including step：It is first
First there is provided a substrate, in substrate surface formation protective layer；Then, lead layer is plated in the protective layer.Using invention
Preparation method makes to form the anti-artefact structure of flat panel detector, on the one hand by good toughness and the suitable substrate of density is used as support
Body, is easy to be processed into big sheet material, is relatively easy to installation operation；On the other hand by protective layer protection group bottom, manufacturing process is prevented
Middle liquid lead causes to corrode to copper.The anti-artefact structure of flat panel detector that the present invention is provided can effectively prevent back scattering, so that
The higher image of quality is formed, helps doctor to make a definite diagnosis focus.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of preparation method of the anti-artefact structure of flat panel detector, it is characterised in that the anti-artefact structure of flat panel detector
The back side of flat panel detector is produced on, the preparation method includes：
1) substrate is provided, in substrate surface formation protective layer；
2) lead layer is plated in the protective layer；
Wherein, in the step 1) and the step 2) between be additionally included in the step of protective layer coating scaling powder layer
Suddenly；Also,
The preparation method includes：First, the substrate up and down and circumferential surface formation clad substrates protective layer；So
Afterwards, the protective layer up and down and circumferential surface coating scaling powder layer；Last lead plating, during lead plating, the scaling powder
Leafing opens the protective layer, thus the protective layer up and down and circumferential surface formation lead layer.
2. the preparation method of the anti-artefact structure of flat panel detector according to claim 1, it is characterised in that：The step 1)
The step of including cleaning the substrate before middle formation protective layer.
3. the preparation method of the anti-artefact structure of flat panel detector according to claim 1, it is characterised in that：The substrate is
Copper, nickel or alloy.
4. the preparation method of the anti-artefact structure of flat panel detector according to claim 1, it is characterised in that：The step 1)
It is middle to form protective layer in the substrate surface by the way of plating.
5. the preparation method of the anti-artefact structure of flat panel detector according to claim 4, it is characterised in that：The protective layer
For nickel dam.
6. the preparation method of the anti-artefact structure of flat panel detector according to claim 1, it is characterised in that：The step 2)
It is middle by the way of hot dipping on the plated surface of the protective layer lead layer, the temperature range of hot dipping is 400 DEG C~450 DEG C.
7. a kind of anti-artefact structure of flat panel detector, the anti-artifact structure fabrication is in the flat panel detector back side, its feature
It is that the anti-artefact structure includes：Substrate, formed the substrate surface protective layer and be plated in the protective layer table
The lead layer in face；Wherein, the protective layer, lead layer coat whole substrate successively from the inside to the outside；Also,
The anti-artefact structure of flat panel detector by first the substrate up and down and circumferential surface formation clad substrates
Protective layer, then the protective layer up and down and circumferential surface coating scaling powder layer, last lead plating and obtain；In lead plating process
In, the scaling powder leafing opens the protective layer so that the protective layer up and down and circumferential surface formation lead layer.
8. the anti-artefact structure of flat panel detector according to claim 7, it is characterised in that：On a surface of the substrate
Protective layer and lead layer are sequentially formed from bottom to top.
9. the anti-artefact structure of flat panel detector according to claim 7, it is characterised in that：The thickness range of the substrate is
0.2~0.4mm.
10. the anti-artefact structure of flat panel detector according to claim 7, it is characterised in that：The thickness model of the protective layer
Enclose for 0.5~1.5 μm.
11. the anti-artefact structure of flat panel detector according to claim 7, it is characterised in that：The thickness range of the lead layer
For 0.05~0.1mm.
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| CN108596993B (en) * | 2018-02-26 | 2022-07-12 | 上海奕瑞光电子科技股份有限公司 | System and method for correcting unsaturated artifacts of images |
| CN110779938A (en) * | 2019-11-27 | 2020-02-11 | 江苏省建筑科学研究院有限公司 | On-site nondestructive testing method and device for construction quality of prefabricated concrete column sleeve joint |
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