CN109686811A - A kind of photoelectricity flat panel detector and its board structure - Google Patents
A kind of photoelectricity flat panel detector and its board structure Download PDFInfo
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- CN109686811A CN109686811A CN201810598279.6A CN201810598279A CN109686811A CN 109686811 A CN109686811 A CN 109686811A CN 201810598279 A CN201810598279 A CN 201810598279A CN 109686811 A CN109686811 A CN 109686811A
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- 230000005622 photoelectricity Effects 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011159 matrix material Substances 0.000 claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 235000009518 sodium iodide Nutrition 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 2
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of photoelectricity flat panel detector and its board structure, which includes one layer of active-matrix substrate layer, one layer of photodetector layers, one layer of scintillator layers.It is made of on active-matrix substrate pixel region one by one and peripheral circuit, the present invention inhibits the electric jamming between adjacent pixel, the ghost image and light cross-cutting issue of Lai Gaishan imaging sensor by the structure of improvement photodetector layers.
Description
Technical field
The present invention relates to a kind of photoelectricity flat panel detector and its board structures, specifically optimize the knot of photodetection layer
Structure belongs to field of photoelectric technology.It is preferably used for the fields such as medical diagnosis, industrial non-destructive inspection and public safety inspection.
Radioactive ray in the present invention include X-ray, alpha ray, β ray, gamma-rays etc..
Background technique
In recent years, with advances in technology and the reduction of cost, the X-ray of the flat-panel detector made of semiconductor material
Device for image is more and more wider in the fields application such as medical treatment, industrial nondestructive testing, public safety.In the skill converted using indirect energy
In art, x-ray is converted to visible light by scintillator layers, it is seen that light generates charge accumulated to having using photoelectric conversion layer
On source matrix substrate, and it is read out.If direct energy conrersion mode, X-ray passes through photoelectric conversion layer, directly produces
Raw electronics, gathers on active-matrix substrate.
The active-matrix substrate of actual use is usually amorphous silicon, metal oxide thin-film transistor (TFT) or complementation
Metal oxide (CMOS) technology.Because the electron mobility of amorphous silicon is lower, in order to obtain larger quantum detection effect
Rate (DQE), so the pixel of the active matrix based on amorphous TFT is bigger, usually in 100-150um or so.And it is based on metal
The electron mobility of the semiconductor of oxide and CMOS is 10-400 times of amorphous silicon, thus pixel size can accomplish 75um with
Under, it is used for finer detection.
X-ray is converted to visible light by scintillator layers, it is seen that light enters after photodetection layer, forms charge, but it
Preceding technology has the pixel that a small amount of charge flows on other adjacent active-matrix substrates, causes the distortion read, causes
The problem of ghost image or other display quality are deteriorated.
Summary of the invention
A kind of photoelectricity flat panel detector substrate contains one layer of active-matrix substrate layer, one layer of photodetector layers, one layer of sudden strain of a muscle
Bright body layer, ray are converted into visible light by scintillator layers, it is seen that light passes through photodetection layer again and is converted into electronics, active matrix
Substrate layer carries out signal processing to electronics by sub-pixel；It is corresponding, also there is pixel to be spaced from photodetection layer
And it is corresponded with the pixel on active-matrix substrate.
Preferably, the Pixel Dimensions on the photodetection layer are exposed or are printed by photomask within 200um
Equal manufacturing process production.
Preferably, the material of the photodetection layer is amorphous silicon (a-Si), perovskite, copper indium gallium selenide (CIGS), telluride
Cadmium (CdTe) etc..
Preferably, the active-matrix substrate can be monocrystalline silicon, amorphous silicon, low temperature polycrystalline silicon, metal oxide, organic
The materials such as semiconductor.
Preferably, the scintillator can for inorganic perhaps organic material can by indirect energy convert or directly
Energy conversion, material is usually cesium iodide (CSI), sodium iodide, zinc sulphide, amorphous selenium etc..Scintillator can not also use, ray
It is directly entered photodetection layer and carries out energy level transition, generate charge accumulated on active-matrix substrate.
Preferably, by the way that barricade, black matrix" etc. be inorganic, organic etc., insulating materials separate the pixel, prevent charge
Intersect and flows into other pixels.
Preferably, shape, the size of the pixel size, shape and active matrix pixel opening are corresponding, it is ensured that electricity
Lotus can completely flow into active matrix.
Preferably, the barricade can first be produced on active-matrix substrate and also the later period to photodetection layer into
Row dry etching, then with insulating materials, the interval of pixel is filled on photodetection layer.
The structure for improving photodetector layers through the invention, inhibits the electric jamming between adjacent pixel, can change
The ghost image and light cross-cutting issue of kind imaging sensor, obtain good imaging effect.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of current Traditional photovoltaic flat panel detector substrate；
Fig. 2 is active-matrix substrate dot structure schematic top plan view；
Fig. 3 is the photoelectricity flat panel detector substrate diagrammatic cross-section of the photodetector with barrier wall structure；
In figure: 1- active-matrix substrate, 2- photodetection layer, 3- scintillator layers, the pixel on 4- active-matrix substrate, 5-
Barricade.
Specific embodiment
Fig. 1 is the diagrammatic cross-section of photoelectricity flat panel detector substrate traditional at present
Photoelectricity flat panel detector substrate mainly adds photodetection layer and scintillator layers by lowest level active-matrix substrate
Composition.Work as ray, such as X-ray penetration-detection object, usually indirect energy is converted, and is needed to first pass through scintillator layers, is converted to
Visible light is again incident on photodetection layer, is converted to charge, and charge, which is accumulated again on active matrix layer, to be read out, can handle
The shape of object to be detected is read out by digital signal.Other modes can also carry out direct energy conrersion, be exactly ray
Photodetection layer is shone directly into, electronics is converted to by energy level transition.When photodetection layer is when carrying out photoelectric conversion, generate
Electronics or electric field influence whether adjacent pixel, cause the charge of adjacent pixel to be distorted, influence be imaged accuracy.
Fig. 2 is active-matrix substrate dot structure schematic top plan view
On active-matrix substrate, multiple dot structures are formed, transistor is usually amorphous silicon, monocrystalline silicon, polysilicon, gold
Belong to oxide or organic semiconductor etc..It in accumulation to pixel electrode, then is read out by triode, usual amorphous silicon
Leakage current it is larger, monocrystalline silicon, polysilicon take second place, and the leakage current of metal oxide is minimum at present, leakage current more under, refreshing frequency
It is higher, dynamic detection can be used in.4 be the pixel on active-matrix substrate, and pixel is typically sized to less than 150-200um,
Related to resolution ratio, quantum efficiency, electron mobility etc., the aperture opening ratio of pixel is big as far as possible, to obtain higher quantum conversion
Efficiency.
Fig. 3 is the photoelectricity flat panel detector substrate diagrammatic cross-section of the photodetector with barrier wall structure
On active base plate photodetection layer, need to make one layer of photodetection layer again.Photodetection layer main material be
Amorphous silicon PN junction, copper indium gallium selenide (CIGS), perovskite etc., pass through physical vapour deposition (PVD) (PVD) or plasma-reinforced chemical gas
Mutually the modes such as deposition (PECVD) are sputtered, are exposed, etching technics makes, and can also pass through the modes such as printing.In order to completely cut off light
Charge on electric detecting layer interacts, we made in the corresponding pixel of photodetection layer 5 in Fig. 3 shown in barricade, barricade
Height be 0.2um-3um, in the top of active matrix pixel, material is insulator for position, can first pass through plated film or print
The mode of brush is deposited in active base plate pixel, can also be deposited in photodetection layer dry according to dot structure on active base plate
Redeposition is got on after carving.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the scope of the present invention.
Claims (8)
1. a kind of photoelectricity flat panel detector substrate, which is characterized in that contain one layer of active-matrix substrate layer, one layer of photodetector
Layer, one layer of scintillator layers, ray are converted into visible light by scintillator layers, it is seen that light passes through photodetection layer again and is converted into electricity
Son, active-matrix substrate layer carry out signal processing to electronics by sub-pixel；It is corresponding, also there is pixel on photodetection layer
It is spaced from by barricade and is corresponded with the pixel on active-matrix substrate.
2. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the pixel on the photodetection layer
Size is exposed by photomask within 200um or the manufacturing process such as printing makes.
3. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the material of the photodetection layer is
Amorphous silicon (a-Si), perovskite, copper indium gallium selenide (CIGS), cadmium telluride (CdTe) etc..
4. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the active-matrix substrate can be
The materials such as monocrystalline silicon, amorphous silicon, low temperature polycrystalline silicon, metal oxide, organic semiconductor.
5. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the scintillator can be inorganic or
Person's organic material, can by indirect energy convert or direct energy conrersion, material be usually cesium iodide (CSI), sodium iodide,
Zinc sulphide, amorphous selenium etc..Scintillator can not also use, and ray is directly entered photodetection layer and carries out energy level transition, generate
Charge accumulated is on active-matrix substrate.
6. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the pixel passes through barricade, black
Colour moment battle array etc. is inorganic, the insulating materials such as organic separate, and prevents charge from intersecting and flows into or built in field interferes other pixels, barricade
Height be 0.2-3um.
7. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the pixel size, shape and
Shape, the size of active matrix pixel opening are corresponding, it is ensured that charge can completely flow into active matrix.
8. photoelectricity flat panel detector substrate according to claim 1, which is characterized in that the barricade can be first produced on
It can also be filled with insulating materials at interval of the later period to pixel on photodetection layer on active-matrix substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810598279.6A CN109686811A (en) | 2018-06-12 | 2018-06-12 | A kind of photoelectricity flat panel detector and its board structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810598279.6A CN109686811A (en) | 2018-06-12 | 2018-06-12 | A kind of photoelectricity flat panel detector and its board structure |
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| CN109686811A true CN109686811A (en) | 2019-04-26 |
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| CN201810598279.6A Pending CN109686811A (en) | 2018-06-12 | 2018-06-12 | A kind of photoelectricity flat panel detector and its board structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110412645A (en) * | 2019-09-03 | 2019-11-05 | 张家港赛提菲克医疗器械有限公司 | A kind of novel scatter suppression flat panel detector |
| CN111198396A (en) * | 2019-12-23 | 2020-05-26 | 德润特医疗科技（武汉）有限公司 | AED rapid detection method |
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| US20020168793A1 (en) * | 2001-05-10 | 2002-11-14 | Yoshihiro Izumi | Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices |
| JP2004325178A (en) * | 2003-04-23 | 2004-11-18 | Toshiba Corp | Radiation detector |
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| CN1790054A (en) * | 2004-12-17 | 2006-06-21 | 西门子公司 | Radiation detector, in particular for x- or gamma radiation, and method for producing it |
| CN101010806A (en) * | 2004-08-20 | 2007-08-01 | 皇家飞利浦电子股份有限公司 | Microelectronic system with a passivation layer |
| CN102628953A (en) * | 2011-02-07 | 2012-08-08 | 三星电子株式会社 | Radiation detector, method for manufacturing the same and X-ray image processing system including the radiation detector |
| JP2013019690A (en) * | 2011-07-07 | 2013-01-31 | Toshiba Corp | Radiation detector |
| JP2013068513A (en) * | 2011-09-22 | 2013-04-18 | Yasu Medical Imaging Technology Co Ltd | Radiation image sensor and photoelectric conversion element array unit |
| CN104781889A (en) * | 2012-11-16 | 2015-07-15 | 东丽株式会社 | Protein production accelerator |
| CN208970541U (en) * | 2018-06-12 | 2019-06-11 | 南京迪钛飞光电科技有限公司 | A kind of photoelectricity flat panel detector substrate |
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2018
- 2018-06-12 CN CN201810598279.6A patent/CN109686811A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020168793A1 (en) * | 2001-05-10 | 2002-11-14 | Yoshihiro Izumi | Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices |
| JP2004325178A (en) * | 2003-04-23 | 2004-11-18 | Toshiba Corp | Radiation detector |
| JP2005030806A (en) * | 2003-07-08 | 2005-02-03 | Toshiba Corp | Radiation detector and manufacturing method thereof |
| CN101010806A (en) * | 2004-08-20 | 2007-08-01 | 皇家飞利浦电子股份有限公司 | Microelectronic system with a passivation layer |
| CN1790054A (en) * | 2004-12-17 | 2006-06-21 | 西门子公司 | Radiation detector, in particular for x- or gamma radiation, and method for producing it |
| CN102628953A (en) * | 2011-02-07 | 2012-08-08 | 三星电子株式会社 | Radiation detector, method for manufacturing the same and X-ray image processing system including the radiation detector |
| JP2013019690A (en) * | 2011-07-07 | 2013-01-31 | Toshiba Corp | Radiation detector |
| JP2013068513A (en) * | 2011-09-22 | 2013-04-18 | Yasu Medical Imaging Technology Co Ltd | Radiation image sensor and photoelectric conversion element array unit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110412645A (en) * | 2019-09-03 | 2019-11-05 | 张家港赛提菲克医疗器械有限公司 | A kind of novel scatter suppression flat panel detector |
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Address after: 2-67, No. 5, Qijing 1st Road, Longshan Street, Wuhu Economic and Technological Development Zone, Wuhu City, Anhui Province, 241006 Applicant after: Wuhu ditifei Photoelectric Technology Co.,Ltd. Address before: No. 3 Hengda Road, Economic and Technological Development Zone, Qixia District, Nanjing City, Jiangsu Province, 210038 Applicant before: NANJING DIFEITAI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |