CN104851867B - Apply the aluminium alloy lead frame in power semiconductor component - Google Patents
Apply the aluminium alloy lead frame in power semiconductor component Download PDFInfo
- Publication number
- CN104851867B CN104851867B CN201510315743.2A CN201510315743A CN104851867B CN 104851867 B CN104851867 B CN 104851867B CN 201510315743 A CN201510315743 A CN 201510315743A CN 104851867 B CN104851867 B CN 104851867B
- Authority
- CN
- China
- Prior art keywords
- chip
- electrodeposition
- metals
- lead frame
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
- H01L2924/15724—Aluminium [Al] as principal constituent
Abstract
The present invention relates to a kind of lead frame, more precisely, the present invention is intended to provide a kind of aluminium alloy lead frame applied in power semiconductor component.The invention provides the species and its proportionate relationship of each stock in aluminium alloy mixing material, and utilize the aluminium alloy lead frame prepared by the mixing material.And one layer of first electrodeposition of metals is first electroplated on the lead frames, the second electrodeposition of metals and the 3rd electrodeposition of metals are then electroplated on the first electrodeposition of metals again.The lead frame for being coated with first, second, third electrodeposition of metals is used for complete the manufacturing process such as chip stickup, wire bonding and plastic package process.After completion plastic package process, in addition it is also necessary to the 4th electrodeposition of metals is electroplated on the 3rd exposed region outside capsulation material of electrodeposition of metals.
Description
Technical field
The present invention relates generally to a kind of lead frame, more precisely, the present invention is intended to provide one kind is applied in power half
Aluminium alloy lead frame in conductor component.
Background technology
The encapsulation of ball bar permutation BGA formulas is different from, lead frame Lead-frame has been quoted in power device etc. extensively
In encapsulated type, because the larger work(class device of power consumption usually requires to be provided simultaneously with less size and with preferably scattered
Hot property, and the lead frame of metal material is then well positioned to meet this purpose.In the prior art, most power point
It is copper alloy or other metal alloy materials from lead frame used in device, in currently disclosed technical conditions
Under, batch application is also difficult in actual production by the use of aluminum alloy material as lead frame.Maximum the problem of is, aluminium alloy
Material is easily damaged when being punched or being bent, thus cause the lead frame of aluminum alloy material be also easy for bursting apart or
Wreck.Those skilled in the art is both known about, in semiconductor packaging industry, and substantial lead frame is all needed in multiple working procedure
It is punched out and implements bending.
In addition, another vital factor is also resided in, aluminium alloy is easily aoxidized in air ambient, once and aluminium is closed
The surface of gold has oxide, just easilys lead to the electric connection that chip can not be with aluminium alloy progress each other, these
The removing of oxide also can additionally increase cost, and this to be us do not expect to see.In order to solve these problems, the U.S. is special
Profit application US2010/0009500 A1 disclose a kind of manufacturing process of the lead frame based on aluminum alloy material, and this application is carried
Go out on the lead frames using noble metal as electrodeposited coating, it is obvious that the scheme that this application is proposed can only be rested on
In experiment or theoretic, because being largely not appropriate for using noble metal, large batch of industrial production is also more difficult to be reduced into
This.Exactly in view of these stubborn problems, the present invention, which is proposed, to be applied aluminum alloy materials on lead frame is prepared and utilize
Aluminium alloy lead frame come realize production power device method.
The content of the invention
The invention provides a kind of method that utilization aluminium alloy lead frame prepares power semiconductor component, wherein, institute
Lead frame is stated comprising multiple chip mount units and comprising multiple pins being arranged on around chip mount unit, the present invention
The method provided is mainly included the following steps that：
First, second, third electrodeposition of metals is electroplated successively on the surface of the lead frame；In chip mount unit institute
Comprising chip paste the top surface adhering chip in area, and the multiple electrodes point of chip front side will be arranged on using a plurality of bonding wire
It is not electrically connected on the pin-land that different pins are included；Plastic package process is carried out, formation is coated on chip and pastes area's top surface
And simultaneously also by chip, bonding wire and pin-land coat plastic-sealed body；Modeling is extended to what the pin was included
Seal and the 4th electrodeposition of metals is further electroplated on the external pin outside body.
Above-mentioned method, first electrodeposition of metals, the second electrodeposition of metals and the 3rd electrodeposition of metals are neither
Include precious metal electrodeposited coating.First electrodeposition of metals is zinc electrodeposited coating, and second electrodeposition of metals is nickel electrodeposited coating.
Above-mentioned method, the 3rd electrodeposition of metals is copper electrodeposited coating.4th electrodeposition of metals is tin electrodeposited coating.
Silicone content is 0.2%~0.6% in above-mentioned method, the lead frame, and iron content is 0.3%~0.8%, copper
Content be 0.1%~0.3%, manganese content be 0.1%~1%, content of magnesium be 0.5%~5%, chromium content be 0.1%~
0.5%, Zn content is 0.1%~0.4%, and Ti content is 0.05%~0.3%.
Above-mentioned method, the gross thickness of first, second electrodeposition of metals and the 3rd electrodeposition of metals for 0.5um~
15um.Above-mentioned method, the thickness of the 4th electrodeposition of metals is 5um~15um.Above-mentioned method, the lead frame
Gross thickness is T, and the punching radius of corner of angle die cutting is limited in 0.5T~2Tmm produced by being punched out to lead frame.Above-mentioned
Method, the gross thickness of the lead frame is T, and the bending radius of corner of the bending angle produced by being bent to lead frame is limited
System is in 0.5T~3Tmm.
Above-mentioned method, wherein, while plating forms four electrodeposition of metals on external pin, also in the chip
The bottom surface for pasting area is electroplate with the 4th electrodeposition of metals；And electroplate the 4th electrodeposition of metals covering that area bottom surface is pasted in chip
It is being plated on successively on the first electrodeposition of metals, the second electrodeposition of metals and the 3rd electrodeposition of metals of chip stickup area bottom surface,
And be plated on chip paste area bottom surface the 4th electrodeposition of metals expose to outside the plastic-sealed body.
Above-mentioned method, pin, chip mount unit are cut from lead frame separate after and will connection
After company muscle excision on pin, the cut surface formed on pin or on chip mount unit is exposed to first, the
2nd, outside the third and fourth electrodeposition of metals.
Above-mentioned method, wherein, positioned at the chip back electrode by conductive material adhesion be plated on chip glue
On the 3rd electrodeposition of metals for pasting area's top surface, and plating is covered in successively in the 3rd electrodeposition of metals that chip pastes area's top surface
Chip is plated on to paste on the first electrodeposition of metals and the second electrodeposition of metals of area's top surface.Above-mentioned method, wherein, it is described to draw
The position of plane where pin pastes the position of the plane where area higher than the chip, and completes the 4th electrodeposition of metals
After plating, the external pin is further bent shaping and is generally aligned in the same plane to chip stickup area.
Present invention also offers power semiconductor component prepared by a kind of utilization aluminium alloy lead frame, including：
Comprising chip mount unit and include the aluminium alloy leads of multiple pins being arranged on around chip mount unit
First, second, third electrodeposition of metals is electroplated on framework, the surface of the aluminium alloy lead frame successively, wherein, first gold medal
Belong to electrodeposited coating, second electrodeposition of metals and the 3rd electrodeposition of metals and all do not include precious metal electrodeposited coating；It is arranged on
The chip of chip mount unit pastes the chip on the top surface in area；A plurality of bonding wire will be arranged on the multiple electrodes of chip front side
It is electrically connected on the pin-land included in different pins；Be coated on chip paste area's top surface and while also by core
The plastic-sealed body of piece, bonding wire and pin-land cladding；And plating the pin included extend to plastic-sealed body it
The 4th electrodeposition of metals on outer external pin.
Above-mentioned power semiconductor component, wherein the 4th electrodeposition of metals does not include precious metal electrodeposited coating.
Above-mentioned power semiconductor component, first electrodeposition of metals is zinc electrodeposited coating, second metal plating
Layer is nickel electrodeposited coating.Above-mentioned power semiconductor component, the 3rd electrodeposition of metals is copper electrodeposited coating.Above-mentioned power half
Conductor component, the 4th electrodeposition of metals is tin electrodeposited coating.
Silicone content is 0.2%~0.6% in above-mentioned power semiconductor component, the aluminium alloy lead frame, and iron contains
Measure as 0.3%~0.8%, copper content is 0.1%~0.3%, manganese content is 0.1%~1%, content of magnesium is 0.5%~5%,
Chromium content is 0.1%~0.5%, and Zn content is 0.1%~0.4%, and Ti content is 0.05%~0.3%.
Above-mentioned power semiconductor component, the total thickness of first, second electrodeposition of metals and the 3rd electrodeposition of metals
Spend for 0.5um~15um.Above-mentioned power semiconductor component, the thickness of the 4th electrodeposition of metals is 5um~15um.
Above-mentioned power semiconductor component, the gross thickness of the lead frame is T, and what the lead frame was included rushes
The punching radius of corner of corner cut is limited in 0.5T~2Tmm.Above-mentioned power semiconductor component, the total thickness of the lead frame
The bending radius of corner spent for T, the lead frame bending angle included is limited in 0.5T~3Tmm.
Above-mentioned power semiconductor component, the bottom surface for also pasting area in the chip is electroplate with the 4th electrodeposition of metals；
And plating is covered in the 4th electrodeposition of metals that chip pastes area bottom surface and is plated on chip pastes area bottom surface first successively
On electrodeposition of metals, the second electrodeposition of metals and the 3rd electrodeposition of metals, and it is plated on the 4th gold medal that chip pastes area bottom surface
Category electrodeposited coating is exposed to outside the plastic-sealed body.
Above-mentioned power semiconductor component, the cut surface formed on pin or on chip mount unit is exposed to
Outside first, second, third and fourth electrodeposition of metals.
In addition, the present invention also provides power semiconductor component prepared by a kind of utilization aluminium alloy lead frame, including：
Comprising chip mount unit and include the aluminium alloy leads of multiple pins being arranged on around chip mount unit
First, second, third electrodeposition of metals is electroplated successively in framework, the surface of the aluminium alloy lead frame；Installed installed in chip
The chip of unit pastes the chip on the top surface in area；The multiple electrodes for being arranged on chip front side are distinguished electrical by a plurality of bonding wire
It is connected on the pin-land that different pins are included；Be coated on chip paste area's top surface and while also by chip, bonding draw
The plastic-sealed body of line and pin-land cladding；And the outside extended to outside plastic-sealed body that plating is included in the pin is drawn
The 4th electrodeposition of metals on pin；Wherein, the gross thickness of the lead frame is T, and the punching that the lead frame is included
The punching radius of corner at angle is limited in the bending radius of corner for the bending angle that 0.5T~2Tmm and the lead frame are included
It is limited in 0.5T~3Tmm.
Those skilled in the art reads the detailed description of preferred embodiments below, and referring to the drawings after, it is of the invention
The advantage of these and other aspects undoubtedly will be evident.
Brief description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Figure 1A is the overlooking the structure diagram of lead frame.
Figure 1B is vertical section structural representation of the lead frame along dotted line A-A.
Fig. 2A is the vertical section structural representation after lead frame first, second electrodeposition of metals of plating.
Fig. 2 B are the structural representations that first, second electrodeposition of metals electroplated is amplified.
Fig. 3 A-3B are that adhering chip and be connected to the electrode of chip draws on the chip mount unit included in lead frame
Structural representation after on pin welding zone.
Fig. 4 is the knot for completing to envelope the chip mount unit that lead frame is included with the plastic-sealed body of acquisition after plastic package process
Structure schematic diagram.
Fig. 5 is on the external pin outside plastic-sealed body is extended to and the exposed chip outside plastic-sealed body pastes the bottom in area
The structural representation of the 3rd electrodeposition of metals is electroplated on face.
Fig. 6 A are that the external pin part bending forming of pin extremely is pasted into area with chip to be located at conplane schematic diagram.
Fig. 6 B are the vertical view signals of the SMD power device obtained on lead frame after each chip mount unit separation
Figure.
Fig. 7 A are the overlooking the structure diagrams of another lead frame in another embodiment of the application.
Fig. 7 B are the section signals of the plug-type power device obtained on lead frame after each chip mount unit separation
Figure.
Fig. 7 C are the overlooking the structure diagrams of plug-type power device.
Fig. 8 A-1 to 8A-2 are the structural representations that the punching radius of corner to lead frame is limited.
Fig. 8 B are the structural representations that the bending radius of corner to lead frame is limited.
Embodiment
Referring to shown in Figure 1A, the present invention by by taking the lead frame 100 and chip mount unit 100A of diagram as an example to this case
Carry out narration explanation.The lead frame 100 of aluminum alloy material is generally comprised multiple be similar to and confined with dotted line in Figure 1A
Chip mount unit 100A, and chip mount unit 100A comprise at least have chip paste area (Ji Jidao areas) 101 and set
Paste the pin that does not illustrate of multiple pins 102,103,104 or more around area 101 in chip, and pin 102,103
Pin-land 102a and pin-land 103a is included respectively.Alternatively, it is possible to use connect muscle 105 by pin 102,103,104
Mutually it is joined to one another or these pins is connected to other positions of lead frame 100, so that the machinery for strengthening pin is strong
Spend to prevent them from occurring the intentional deformation such as distortion or bending.It should be appreciated that except in figure ia having illustrated
Structure is applied to beyond the application, also have other polytype lead frame (not shown) can with alternative lead frame 100 or
Chip mount unit 100A, the application is to carry out general explaination to the spirit of the present invention with the structure of schema, therefore in figure
Described structure is not construed as limiting the invention.
Lead frame based on aluminum alloy materials easily bursts apart or wrecked when being punched or being bent, this programme
On the one hand it is that using suitable raw material, and is drawn by the proportionate relationship for adjusting the various composition in alloy material to optimize
The hardness and toughness of wire frame, allow it to bear a range of flush shear force or the unlikely fracture in its bending forming.
Specifically, the species and content difference of various stocks in the aluminium alloy mixing material that lead frame 100 is used are prepared
It can choose as follows：Silicon Si content is 0.20%~0.6%, and iron Fe content is 0.3%~0.8%, and copper Cu content is
0.1%~0.3%, manganese Mn content are 0.1%~1%, and magnesium Mg content is 0.5%~5%, and chromium Cr content is 0.1%
~0.5%, zinc Zn content are 0.1%~0.4%, and titanium Ti content is 0.05%~0.3%, and other materials are metallic aluminium
Al.It must notice that the mixing material of above-mentioned disclosed this proportionate relationship is applied to any types aluminium alloy lead frame
Preparation, and if simply any one or a few stock in the mixing material is slightly replaced or extra by other
Raw material supplement is added in the mixing material or slightly changes the percentage of various stocks, is all considered as containing
Cover the true intention of the present invention and whole variations and modifications of scope.
The method flow of the present invention can be substantially described as follows：As the aluminium alloy lead frame prepared by above-mentioned mixing material
First have to electroplate one layer of first electrodeposition of metals (such as zinc electrodeposited coating), another layer the is then electroplated on aluminium alloy lead frame again
Two electrodeposition of metals (such as nickel electrodeposited coating) are covered on the first electrodeposition of metals, the electrodeposition of metals (example of re-plating afterwards the 3rd
Such as copper electrodeposited coating) it is covered on the second electrodeposition of metals.First electrodeposition of metals, the second electrodeposition of metals and the 3rd metal plating
Layer does not all include precious metal electrodeposited coating.Now, being electroplate with the lead frame of first, second, third electrodeposition of metals needs use
To complete the manufacturing process such as chip stickup, wire bonding and plastic package process.In plastic package process, a part of region of lead frame
In being coated on by plastic packaging material, namely a part of region of the 3rd electrodeposition of metals is necessarily enveloped by plastic-sealed body, but the 3rd
Another part region not enveloped by plastic-sealed body of electrodeposition of metals is easy for aoxidizing.So complete plastic package process it
Afterwards, in addition it is also necessary to electroplate the 4th cheap electrodeposition of metals and (be for example not susceptible in the region not coated in lead frame by plastic packaging material
The tin electrodeposited coating of oxidation), namely it is using the 4th electrodeposition of metals that the 3rd electrodeposition of metals is exposed outside capsulation material
This subregion cover, its detailed process is referring to the description below of the present invention.
Referring to the process chart shown in Figure 1A -6B, the present invention is described in detail.In chip mount unit 100A, draw
The chip that pin 102,103,104 is respectively provided with pastes the same side in area 101, and pin-land 102a and pin-land 103a glue with chip
The separation of area 101 is pasted to disconnect and set along the edge that chip pastes area 101, and pin 104 is then directly connected to chip stickup
In area 101, wherein pin 104 includes inside pin 104a and external pin 104b, now thinks the company of also corresponding to of pin 104
Muscle.Pin 102,103,104 can both paste area 101 with chip and be generally aligned in the same plane the two that can also be formed as shown in Figure 1B
Not in conplane structure.Figure 1B is the dotted line A-A along along Figure 1A of lead frame 100 vertical section structural representation, the implementation
In mode, the plane where pasting area 101 higher than chip in the position of the plane where original state, pin 102,103,104
Position.First, first will lead frame 100 the first electrodeposition of metals of electroplating surface 201, the first electrodeposition of metals 201 is
The electrodeposited coating of one layer of zinc, and electroplate the second electrodeposition of metals 202 on lead frame 100 and be covered in the first electrodeposition of metals 201
On, the second electrodeposition of metals 202 is nickel electrodeposited coating.First nickel plating can be selected zinc-plated again, can also be in zinc layers plating nickel on surface.Then
Again as shown in Figure 2 A, the 3rd metal electricity that another layer is covered on the second electrodeposition of metals 202 is electroplated on lead frame 100
Coating 203, now the 3rd electrodeposition of metals 203 can be the electrodeposited coating of one layer of copper.First electrodeposition of metals 201, the second metal
The electrodeposition of metals 203 of electrodeposited coating 202 and the 3rd does not all include precious metal electrodeposited coating.In order to more intuitively understand, Fig. 2 B are to cut
Take one section of lead frame for being coated with the first electrodeposition of metals 201, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203 successively
The fragment of frame 100 and the schematic diagram being amplified.
Referring to shown in Fig. 3 A-3B, chip 400 is pasted onto the chip stickup area 101 that chip mount unit 100A is included
On, but the back side of chip 400 not directly with chip paste area 101 top surface 101a contact because the back side of chip 400 its
It is directly to be contacted with electroplating the 3rd electrodeposition of metals 203 for pasting the top surface of area 101 in chip in fact, and electroplates and paste area in chip
3rd electrodeposition of metals 203 of 101 top surfaces is then covered in and is plated on the first electrodeposition of metals that chip pastes the top surface of area 101 successively
201 and second on electrodeposition of metals 202.The power device of the generally vertical formula of chip 400, such as rectilinear power
MOSFET, being arranged on the positive electrode of chip 400 typically at least includes first electrode 401 and second electrode 402, first electrode
401 and second electrode 402 insulated by the passivation layer that does not illustrate, and be arranged on the electrode at the back side of chip 400 then for its 3rd
Electrode (is not marked), the 3rd electrode can be bonded in by conductive material (such as conductive silver paste or solder(ing) paste) be plated on chip glue
Paste area 101 top surface on electrodeposited coating on, namely the 3rd electrode essentially by the conductive material adhesion be plated on chip glue
On the 3rd electrodeposition of metals 203 for pasting the top surface the superiors of area 101.In some embodiments, the first electrode 401 of chip 400
Typically it is grid and source electrode respectively with second electrode 402, and the 3rd electrode then drains for it.
After the stickup for completing chip, in addition it is also necessary to will be arranged on the positive multiple electricity of chip 400 using a plurality of bonding wire 302
Pole is electrically connected on the pin-land included in different pins, and these bonding wires 302 at least include bonding wire
First electrode 401 is electrically connected at pin 102 and included by 302a, 302b, such as the utilization bonding wire 302a shown in Fig. 3 B
Pin-land 102a on, second electrode 402 is electrically connected at the pin that pin 103 included using bonding wire 302b and welded
On area 103a.Naturally, bonding wire 302a is not contacted directly with pin-land 102a, bonding wire 302a is in fact and plating
Outermost 3rd electrodeposition of metals 203 on the 102a of pin-land is directly contacted, and is electroplated on the 102a of pin-land
3rd electrodeposition of metals 203 is then to be covered in the first electrodeposition of metals 201 and second being plated on successively on the 102a of pin-land
On electrodeposition of metals 202；Equally, bonding wire 302a is also outermost 3rd metal on the 103a of pin-land with plating
Electrodeposited coating 203 is directly contacted, and the 3rd electrodeposition of metals 203 electroplated on the 103a of pin-land is then to be covered in electricity successively
It is plated on the first electrodeposition of metals 201 and the second electrodeposition of metals 202 on the 103a of pin-land.It is worth noting that, pin
103 tend to appear as L-shaped structure, the external pin 103b that its pin-land 103a is included perpendicular to pin 103, and pin
The edge that welding zone 103a pastes area 101 generally along chip carries out extension so as to a larger bonding area, to meet
A plurality of bonding wire 302b solder bonds are closed thereon, because constituting the second electrode 402 of source electrode generally has larger electricity
Stream passes through, and the bonding wire 302b of more a plurality of number can then carry passing through for these high currents.
Shown in Figure 4, chip 400 and bonding wire 302 must be got up with the cladding of plastic-sealed body 500 so that they obtain thing
Reason protection.Formed mainly in plastic package process and be coated on the plastic-sealed body 500 that chip pastes the top surface of area 101, wherein plastic-sealed body 500
Also chip 400, bonding wire 302 and each pin-land 102a, 103a are enveloped simultaneously.Because the 3rd electrodeposition of metals
203 are plated on the outermost layer of lead frame 100, then complete after plastic packaging, plastic-sealed body and the electrodeposition of metals 203 of part the 3rd are direct
Contact with each other, the region of the 3rd electrodeposition of metals 203 that part is not coated by plastic-sealed body 500 is exposed outside.So needing Fig. 5 for another example
Shown carries out another electroplating technology on lead frame 100, to form one layer of the 4th electrodeposited coating 204, by exposed in plastic packaging
The area covers of the 3rd electrodeposition of metals 203 outside body 500, as one kind selection, the 4th electrodeposited coating 204 can be tin plating
Layer.First electrodeposition of metals 201, the second electrodeposition of metals 202, and the 3rd electrodeposition of metals 203 and the 4th electrodeposition of metals
204 all do not include precious metal electrodeposited coating.The concrete structure of pin 102,103 is illustrated in Fig. 3 B, it is outer that pin 102 is included
Portion pin 102b and pin-land 102a links together, the external pin 103b that pin 103 is included and pin-land 103a
Link together, and external pin 102b, 103b are all extended to outside plastic-sealed body 500 after plastic package process is completed.So shape
Into after the 4th electrodeposited coating 204, the 4th electrodeposition of metals 204 is just electroplated on external pin 102b, 103b naturally.And electricity
The 4th electrodeposition of metals 204 being plated on external pin 102b is covered in the first metal being plated on successively on external pin 102b
On electrodeposited coating 201, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203, for external pin 103b equally such as
This.Because foregoing teachings have been illustrated, the position of the plane where pin 102,103,104 can be selected above chip and paste area
The position of plane where 101, and because the heat dissipation capacity of the power chip 400 with big power consumption is big, so at one preferably
In embodiment, chip pastes area 101 and is in a relatively low position so that being covered in the outermost plating of its bottom surface 101b
Layer can be used for being exposed at outside plastic-sealed body 500 realizing the purpose of radiating.Referring to Fig. 4, it can be found that completing plastic packaging work
After skill, substantially electroplate the 3rd electrodeposition of metals 203 for pasting the bottom surface of area 101 in chip and be exposed at outside plastic-sealed body 500,
And plating is covered in the 3rd electrodeposition of metals 203 that chip pastes the bottom surface of area 101 and is plated on the chip stickup bottom of area 101 successively
On first electrodeposition of metals 201 and the second electrodeposition of metals 202 in face.In this way, then completing the plating of the 4th electrodeposition of metals 204
Afterwards, plating is just covered in the 4th electrodeposition of metals 204 that chip pastes the bottom surface of area 101 and is plated on chip stickup area successively
On the first electrodeposition of metals 201, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203 of 101 bottom surfaces, and the plating
The 4th electrodeposition of metals 204 pasted in chip at the bottom surface of area 101 is also exposed to outside plastic-sealed body 500.In its electroplating technology, the
The gross thickness of one electrodeposition of metals 201, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203 can be in 0.5um~15um
Between, the thickness of the 4th electrodeposition of metals 204 can be controlled between 5um~15um.It is worth mentioning, is the of tin electrodeposited coating
Four electrodeposition of metals 204 are not susceptible to oxidation, and its chemical stability is good.
Referring to the complete packaging body 600 obtained shown in Fig. 6 A-6B, mainly the 4th electrodeposition of metals is completed
After 204 plating, implement the cutting of pin/company muscle and be molded (Trim/Form) process, by packaging body 600 from lead frame 100
Upper cutting is separated, and external pin 102b, the 103b cut down during this from lead frame 100 is further curved
Folding and shaping are generally aligned in the same plane (Fig. 6 A) to chip stickup area 101, because the external pin 104b parts of pin 104 are follow-up
Much use are had no in technique, so external pin 104b is truncated and only leaves internal pin 104a by plastic packaging in the process
In plastic-sealed body 500 (Fig. 6 B).It is because envelope that wherein external pin 102b, 103b, which is bent to coplanar with chip stickup area 101,
It is a kind of encapsulated type for being applied to surface mounting technology (SMT) to fill body 600, and the multilayer electricity of the bottom surface of area 101 is pasted positioned at chip
Outermost 4th electrodeposition of metals 204 of its in coating can by conductive material with larger one on printing board PCB
A little pad solders together, and also may be used by external pin 102b, 103b that same outermost layer is electroplate with the 4th electrodeposition of metals 204
With together with other smaller pad solders on printing board PCB.Wherein, chip pastes the bottom surface one in area 101
As there is larger area because the bottom surface that chip pastes area 101 serves not only as electrode and is also used as preferable sinking path.
It is worth noting that, during the transport or storage of aluminium alloy lead frame, in order to extend the aluminum alloy frame resting period,
Also tend to need to coat one layer of organic OSP (Organic Solder-ability on its 3rd electrodeposition of metals 203
Preservatives) protection against oxidation layer, to prevent the 3rd electrodeposition of metals 203 from being aoxidized in normal environment, and OSP layers
It is easy to be removed rapidly by scaling powder in follow-up high-temperature soldering, such as OSP layers can paste in foregoing mentioned chip
During vapor away at high temperature, and enable the 3rd electrodeposition of metals 203 that exposes under OSP layers that there is more preferable solder bond
Power.Referring to Fig. 6 B, in pin/company's muscle cutting and molding procedure, by pin 102,103,104 and chip mount unit 101 from drawing
On wire frame 100 after cutting separation, what is formed on pin 102 just produces for blocking the cut place separated with lead frame 100
Given birth to a cut surface 102c-1, equally pin 103,104 each on formed be used for block what is separated with lead frame 100
Cut place generates cut surface 103c-1 and cut surface 104c-1 respectively, and being used for of being formed on chip mount unit 101
The cut place separated, which is blocked, with lead frame 100 generates cut surface 101c, and on pin 102,103,104 and chip is installed
These cut places each formed on unit 101 are the junction of they and lead frame 100 originally.At the same time, by even
Be connected on after company's muscle 105 on pin 102,103,104 cuts off, also formed on pin 102 be used for and even muscle 105 is blocked point
From cut place generate cut surface 102c-2, equally formed on pin 103 be used for even muscle 105 block the cutting separated
Place generates cut surface 103c-2, and these cut places formed on pin 102,103 is respective are they and even muscle 105 originally
Junction.These cut surfaces are the sides of each pin or chip mount unit, it is obvious that cut surface 102c-1,102c-2,
104c-1 and cut surface 103c-1,103c-2,101c are not covered by any electrodeposited coating, then constitute the aluminium of pin 102
Alloy material is directly exposed to outside each electrodeposited coating in the region positioned at cut surface 102c-1,102c-2, and the aluminium for constituting pin 103 is closed
Golden material is directly exposed to outside each electrodeposited coating in the region positioned at cut surface 103c-1,103c-2, and the aluminium for constituting pin 104 is closed
Golden material is directly exposed to outside each electrodeposited coating in the region positioned at cut surface 104c-1, equally constitutes chip mount unit 101
Aluminum alloy materials are directly exposed to outside each electrodeposited coating in the region positioned at cut surface 101c.
The lead frame 100 shown in lead frame 100' and Figure 1A shown in Fig. 7 A has no larger difference, shown in Fig. 7 B
Packaging body 600' the flow prepared shown in similar Figure 1A -5, on lead frame 100' implement plating the 4th electrodeposition of metals
Separated after 204, it is necessary to cut packaging body 600' from lead frame 100' in pin cutting and molding procedure.Its
Differ only in, the external pin 104'b that pin 104' is included is not truncated, external pin 104'b and 102'b,
103'b is extended to outside plastic-sealed body 600' simultaneously, and the external pin separated is cut from lead frame 100'
102'b is not also bent and is molded to chip stickup area 101' with 103'b, 104'b and is generally aligned in the same plane (Fig. 7 B).4th
Electrodeposition of metals 204 is electroplated on external pin 102'b, 103'b and 104'b simultaneously.It is connected for pasting area 101' with chip
Together for pin 104', its internal pin 104'a by plastic packaging in plastic-sealed body 500, its external pin 104'b and chip
400 drain electrode is electrically connected with and constitutes an effective drain terminal.Packaging body 600' is a kind of plug-in type (Insert
Device encapsulated type), wherein, external pin 102'b, 103'b, 104'b are generally aligned in the same plane, and they are located at simultaneously
Chip mount unit 100'A side is arranged into a row, and the external pin 102'b, 103'b, 104'b can be used for inserting circuit
In the female plug being already prepared on plate.Equally, in this embodiment, it is also desirable in the 3rd electrodeposition of metals obtained
One layer of organic OSP protection against oxidation layer is covered on 203, the OSP can also be vapored away under the hot environment of chip adhering processes.
The lead frame adopted based on prepared device is aluminium alloy, in order to further avoid because of lead frame
Cause lead frame to burst apart or wreck when some part/regions are punched or bent, the present invention propose to
The angle die cutting of certain radian (substantially circular arc) and/or the punching radius of corner of bending angle and/or bending radius of corner are carried out
The method of limitation.Referring to the pin 102,103,104 shown in Figure 1B, it is clear that they paste area 101 with chip and are not in together
One plane, will manufacture foregoing this structure, must just make it that be connected pin in lead frame 100 pastes area 101 with chip
Bending torsional deformation occurs for coupling part.Or by taking Fig. 6 A as an example, external pin 102a, 103a of pin 102,103 are bent
Shaping is generally aligned in the same plane to chip stickup area 101, and its external pin 102a, 103a are only punched or bent external force
Can so it deform.It is worth noting that, bending drastically is easily burst apart, slow bending must increase the size of lead frame
To provide enough excessive spaces but this is unfavorable for the miniaturization of device.Have in view of that, Fig. 8 A-1 to Fig. 8 A-2 and Fig. 8 B are carried
The method of confession can effectively solve the problem that these problems, and there is provided the lead frame structure of optimization.Assuming that the gross thickness of lead frame 100
For T (mm), if the punching radius of corner R of the angle die cutting (Punch angle) produced by being punched out to lead frame1Meet
It is limited in 0.5T~2T (mm), then the aluminium alloy lead frame prepared by the mixing material of foregoing disclosed each proportionate relationship
Just it is less likely to occur to burst apart.Referring to shown in Fig. 8 A-1, in this area, we generally can be using clicking technique or other are similar
Method removes unwanted part on lead frame, and retains necessary part on the lead frames simultaneously and such as draw to constitute
The basic construction unit such as pin or Lian Jinhuoji islands area.Furthermore, in the step of implementing to be punched to lead frame 100,
Can just be formed at the part region being punched of lead frame 100 similar punching window 106a as shown in Fig. 8 A-1,
106b, 106c, 106d and other more punching windows do not marked, so as to obtain the pin between these punching windows
Or connect muscle or Ji Dao areas., can be in chip mount unit 100A with void as shown in Fig. 8 A-1 in order to more intuitively understand
The fixed lead frame fragment 100B of wire frame illustrates come the limited degree for the circle of contact angular radius that liquidates.Fig. 8 A-2 (top view) institute
What is shown is the lead frame fragment 100B of proportional amplification general configuration schematic diagram, can choose neighbouring pin 102,104
And narration explanation even is carried out exemplified by a punching window 106b of muscle 105, wherein, each punching in punching window 106b
Angle is not right angle, on the contrary, punching window 106b each angle die cutting is die-cut into the fillet with certain radian, and at this
Radius of corner R can be just punched in the forming process of a little angle die cuttings1It is limited in the range of 0.5T~2T (mm).The opposing party
Face, when implementing to bend to lead frame, produced bending angle (Bending angle) the also circle with certain radian
Angle, and if the bending radius of corner R of the bending angle2(Fig. 8 B) meet is limited in the range of 0.5T~3T (mm), then before
The aluminium alloy lead frame prepared by the mixing material of disclosed each proportionate relationship is stated just to be less likely to occur to wreck.Again because drawing
Plating is also needed on wire frame 100 has certain thickness various electrodeposition of metals, in order to prevent that the lead frame after plating can
What can be occurred bursts apart, can also be by following term restriction：If the gross thickness of lead frame 100 is T (mm), the first metal plating
Layer the 201, second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203, the 4th electrodeposition of metals 204 gross thickness be D (mm),
Then to the electrodeposition of metals 201 of lead frame 100 and first, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203 and the 4th
The punching fillet of electrodeposition of metals 204 is limited in 0.5* (T+D)~2* (T+D) mm, and to the metal of lead frame 100 and first electricity
The bending fillet limitation of coating 201, the second electrodeposition of metals 202 and the 3rd electrodeposition of metals 203 and the 4th electrodeposition of metals 204
0.5* (T+D)~3* (T+D) mm (" * " is multiplication sign), if being electroplate with the electrodeposited coating of more levels on lead frame 100,
The like.
More than, by explanation and accompanying drawing, embodiment and exemplary embodiments are given, but these contents are not intended as
Limitation.For a person skilled in the art, read after described above, various changes and modifications undoubtedly will be evident.Cause
This, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.In right
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of claim.
Claims (9)
1. power semiconductor component prepared by a kind of utilization aluminium alloy lead frame, it is characterised in that including：
Comprising chip mount unit and include the aluminium alloy lead frames of multiple pins being arranged on around chip mount unit,
First, second, third electrodeposition of metals is electroplated successively in the surface of the aluminium alloy lead frame；
The chip on the top surface in area is pasted installed in the chip of chip mount unit；
A plurality of bonding wire the multiple electrodes for being arranged on chip front side is electrically connected the pin included in different pins
On welding zone；
Be coated on chip paste area's top surface and while also by chip, bonding wire and pin-land coat plastic-sealed body；With
And
Electroplate the 4th electrodeposition of metals extended on the external pin outside plastic-sealed body included in the pin；
Wherein, the gross thickness of the lead frame is T, and the punching radius of corner limit of the angle die cutting that is included of the lead frame
The bending radius of corner for making the bending angle included in 0.5T~2T and the lead frame is limited in 0.5T~3T；
Silicone content is 0.2%~0.6% in the aluminium alloy lead frame, and iron content is 0.3%~0.8%, and copper content is
0.1%~0.3%, manganese content is 0.1%~1%, and content of magnesium is 0.5%~5%, and chromium content is 0.1%~0.5%, and zinc contains
Measure as 0.1%~0.4%, Ti content is 0.05%~0.3%.
2. a kind of method that utilization aluminium alloy lead frame prepares power semiconductor component, wherein, the lead frame is included
Multiple chip mount units and include multiple pins being arranged on around chip mount unit, it is characterised in that including following
Step：
First, second, third electrodeposition of metals is electroplated successively on the surface of the lead frame；
The chip included in chip mount unit pastes the top surface adhering chip in area, and will be arranged on using a plurality of bonding wire
The multiple electrodes of chip front side are electrically connected on the pin-land included in different pins；
Carry out plastic package process, formed be coated on chip paste area's top surface and while also by chip, bonding wire and pin weld
The plastic-sealed body of area's cladding；
The 4th electrodeposition of metals of further plating on the external pin outside plastic-sealed body is extended to what the pin was included；
The gross thickness of the lead frame is T, the punching radius of corner limit of the angle die cutting produced by being punched out to lead frame
System is in 0.5T~2T；
Silicone content is 0.2%~0.6% in the aluminium alloy lead frame, and iron content is 0.3%~0.8%, and copper content is
0.1%~0.3%, manganese content is 0.1%~1%, and content of magnesium is 0.5%~5%, and chromium content is 0.1%~0.5%, and zinc contains
Measure as 0.1%~0.4%, Ti content is 0.05%~0.3%.
3. method as claimed in claim 2, it is characterised in that wherein described first electrodeposition of metals, the second electrodeposition of metals
Precious metal electrodeposited coating is not all included with the 3rd electrodeposition of metals.
4. method as claimed in claim 2, it is characterised in that the gross thickness of the lead frame is T, is carried out to lead frame
The bending radius of corner of bending angle produced by bending is limited in 0.5T~3T.
5. method as claimed in claim 2, it is characterised in that plating forms the same of the 4th electrodeposition of metals on external pin
When, the bottom surface for also pasting area in the chip is electroplate with the 4th electrodeposition of metals；And
Plating is covered in the 4th electrodeposition of metals that chip pastes area bottom surface and is plated on chip pastes area bottom surface first successively
On electrodeposition of metals, the second electrodeposition of metals and the 3rd electrodeposition of metals, and it is plated on the 4th gold medal that chip pastes area bottom surface
Category electrodeposited coating is exposed to outside the plastic-sealed body.
6. method as claimed in claim 2, it is characterised in that pin, chip mount unit are cut from lead frame and divided
From and by be connected to after company's muscle excision on pin, the cut surface formed on pin or on chip mount unit is sudden and violent
It is exposed at outside first, second, third and fourth electrodeposition of metals.
7. method as claimed in claim 2, it is characterised in that the electrode positioned at the chip back passes through conductive material adhesion
It is being plated on the 3rd electrodeposition of metals of chip stickup area's top surface, and is electroplating the 3rd metal electricity that area's top surface is pasted in chip
Coating is covered in be plated on first, second electrodeposition of metals of chip stickup area's top surface successively.
8. method as claimed in claim 2, it is characterised in that the position of the plane where the pin is viscous higher than the chip
After the position of plane where patch area, and the plating of the 4th electrodeposition of metals of completion, the external pin is further curved
Foldable type is generally aligned in the same plane to chip stickup area.
9. a kind of method that utilization aluminium alloy lead frame prepares power semiconductor component, wherein, the lead frame is included
Multiple chip mount units and include multiple pins being arranged on around chip mount unit, it is characterised in that including following
Step：
First, second, third electrodeposition of metals is electroplated successively on the surface of the lead frame；
The chip included in chip mount unit pastes the top surface adhering chip in area, and will be arranged on using a plurality of bonding wire
The multiple electrodes of chip front side are electrically connected on the pin-land included in different pins；
Carry out plastic package process, formed be coated on chip paste area's top surface and while also by chip, bonding wire and pin weld
The plastic-sealed body of area's cladding；
The 4th electrodeposition of metals of further plating on the external pin outside plastic-sealed body is extended to what the pin was included；
The gross thickness of the lead frame is T, and the bending radius of corner of the bending angle produced by being bent to lead frame is limited
System is in 0.5T~3T；Silicone content is 0.2%~0.6% in the aluminium alloy lead frame, and iron content is 0.3%~0.8%, copper
Content be 0.1%~0.3%, manganese content be 0.1%~1%, content of magnesium be 0.5%~5%, chromium content be 0.1%~
0.5%, Zn content is 0.1%~0.4%, and Ti content is 0.05%~0.3%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510315743.2A CN104851867B (en) | 2011-12-27 | 2011-12-27 | Apply the aluminium alloy lead frame in power semiconductor component |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110461629.2A CN103187382B (en) | 2011-12-27 | 2011-12-27 | Be applied in the aluminium alloy lead frame in power semiconductor components and parts |
| CN201510315743.2A CN104851867B (en) | 2011-12-27 | 2011-12-27 | Apply the aluminium alloy lead frame in power semiconductor component |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110461629.2A Division CN103187382B (en) | 2011-12-27 | 2011-12-27 | Be applied in the aluminium alloy lead frame in power semiconductor components and parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104851867A CN104851867A (en) | 2015-08-19 |
| CN104851867B true CN104851867B (en) | 2017-10-10 |
Family
ID=48678474
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110461629.2A Active CN103187382B (en) | 2011-12-27 | 2011-12-27 | Be applied in the aluminium alloy lead frame in power semiconductor components and parts |
| CN201510315743.2A Active CN104851867B (en) | 2011-12-27 | 2011-12-27 | Apply the aluminium alloy lead frame in power semiconductor component |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110461629.2A Active CN103187382B (en) | 2011-12-27 | 2011-12-27 | Be applied in the aluminium alloy lead frame in power semiconductor components and parts |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN103187382B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112705B (en) * | 2014-06-06 | 2017-06-13 | 宁波康强电子股份有限公司 | A kind of lead frame copper electroplating method and lead frame, lead frame row |
| US20160099200A1 (en) * | 2014-10-01 | 2016-04-07 | Stmicroelectronics S.R.L. | Aluminum alloy lead frame for a semiconductor device and corresponding manufacturing process |
| JP6763607B2 (en) * | 2017-01-12 | 2020-09-30 | 大口マテリアル株式会社 | Lead frame and its manufacturing method |
| CN108281397A (en) * | 2017-12-29 | 2018-07-13 | 合肥矽迈微电子科技有限公司 | Chip-packaging structure and packaging method |
| CN108198798A (en) * | 2018-01-12 | 2018-06-22 | 广州新星微电子有限公司 | A kind of triode and its packaging method |
| CN110610934B (en) * | 2019-09-17 | 2021-11-16 | 珠海格力电器股份有限公司 | Power semiconductor device, packaging structure thereof, manufacturing method thereof and packaging method thereof |
| CN111326491B (en) * | 2020-02-13 | 2022-11-25 | 河南理工大学 | Gold-plated bonded aluminum wire and preparation method thereof |
| CN112117250B (en) * | 2020-09-07 | 2022-07-01 | 矽磐微电子(重庆)有限公司 | Chip packaging structure and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994767A (en) * | 1997-04-09 | 1999-11-30 | Sitron Precision Co., Ltd. | Leadframe for integrated circuit package and method of manufacturing the same |
| EP1037277A2 (en) * | 1999-03-15 | 2000-09-20 | Texas Instruments Incorporated | Lead frame |
| CN101419958A (en) * | 2007-10-26 | 2009-04-29 | 株式会社瑞萨科技 | Semiconductor device and manufacture method thereof |
| CN101794761A (en) * | 2010-03-23 | 2010-08-04 | 张轩 | Lead frame for use in IC packaging |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SI20122A (en) * | 1998-12-22 | 2000-06-30 | Impol, Industrija Metalnih Polizdelkov, D.D. | Aluminium casting-automate alloy, process for its production and application |
| US20030011048A1 (en) * | 1999-03-19 | 2003-01-16 | Abbott Donald C. | Semiconductor circuit assembly having a plated leadframe including gold selectively covering areas to be soldered |
| CN102034782A (en) * | 2009-09-30 | 2011-04-27 | 万国半导体有限公司 | Mixed alloy lead frame used for power semiconductors |
-
2011
- 2011-12-27 CN CN201110461629.2A patent/CN103187382B/en active Active
- 2011-12-27 CN CN201510315743.2A patent/CN104851867B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994767A (en) * | 1997-04-09 | 1999-11-30 | Sitron Precision Co., Ltd. | Leadframe for integrated circuit package and method of manufacturing the same |
| EP1037277A2 (en) * | 1999-03-15 | 2000-09-20 | Texas Instruments Incorporated | Lead frame |
| CN101419958A (en) * | 2007-10-26 | 2009-04-29 | 株式会社瑞萨科技 | Semiconductor device and manufacture method thereof |
| CN101794761A (en) * | 2010-03-23 | 2010-08-04 | 张轩 | Lead frame for use in IC packaging |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104851867A (en) | 2015-08-19 |
| CN103187382B (en) | 2015-12-16 |
| CN103187382A (en) | 2013-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104851867B (en) | Apply the aluminium alloy lead frame in power semiconductor component | |
| CN102347306B (en) | Semiconductor package having dimpled plate interconnections | |
| CN104685615B (en) | The manufacturing method and semiconductor devices of semiconductor devices | |
| KR102082941B1 (en) | Resin-encapsulated semiconductor device and method of manufacturing the same | |
| CN105261459B (en) | Electronic component and its manufacture method | |
| CN103681577B (en) | Resin molded semiconductor device and its manufacture method | |
| US8703545B2 (en) | Aluminum alloy lead-frame and its use in fabrication of power semiconductor package | |
| CN104465544B (en) | Semiconductor device and its manufacturing method | |
| US10886203B2 (en) | Packaging structure with recessed outer and inner lead surfaces | |
| CN103401438B (en) | Surface-mount bridge rectifier and manufacture method thereof | |
| WO2013099854A1 (en) | Circuit board and multi-cavity circuit board | |
| CN102629598B (en) | Semiconductor package having metalized source, gate and drain contact areas | |
| CN200947377Y (en) | Network transformer | |
| EP2980845A1 (en) | A leadless semiconductor package and method | |
| CN206116387U (en) | Big current power semiconductor device's packaging structure | |
| CN103681593A (en) | Leadless ceramic chip carrier packaging structure and process for manufacturing same | |
| CN100392850C (en) | Lead-frame and semi-conductor device with same | |
| CN218482238U (en) | SOT23 lead frame structure | |
| CN102403236B (en) | The semiconductor device of chip exposed and production method thereof | |
| CN111403296B (en) | Semiconductor packaging piece and manufacturing method thereof | |
| CN100446233C (en) | Semiconductor device and manufacturing method therefor | |
| TWI455217B (en) | Al alloy ldf design and fabrication for power semiconductor package | |
| CN107275308A (en) | Semiconductor encapsulation device, semiconductor lead frame and its rib cutting method | |
| CN104332458B (en) | Power chip interconnection structure and its interconnecting method | |
| CN104078437B (en) | The manufacturing method of lead frame and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |