CN104844207A - Temperature stable type ultralow dielectric constant microwave dielectric ceramic BaSiV2O8 - Google Patents

Abstract

The invention discloses a low temperature sinterable temperature stable type ultralow dielectric constant microwave dielectric ceramic BaSiV2O8 and a preparation method thereof. The method includes: (1) weighing ingredients BaCO3, SiO2 and V2O5 with purity of more than 99.9% (weight percent) according to the composition of BaSiV2O8; (2) subjecting the raw materials in step (1) to wet ball mill mixing for 12h, taking distilled water as the ball milling medium, conducting drying, and then performing presintering for 6h in 800DEG C air atmosphere; and (3) adding a binder into the prepared powder and conducting granulation, then carrying out compression moulding, and finally performing sintering in 850-900DEG C air atmosphere for 4h. The binder is a polyvinyl alcohol solution with a mass concentration of 5%, and the adding amount of polyvinyl alcohol accounts for 3% of the total mass of the powder. The ceramic prepared by the invention can be well sintered below 900DEG C, the dielectric constant reaches 13.1-13.7, and the quality factor Qf value is up to 87000-128000GHz, and the resonant frequency temperature coefficient is small. Thus, the temperature stable type ultralow dielectric constant microwave dielectric ceramic BaSiV2O8 has great application value in industry.

Description

Temperature-stable ultralow dielectric microwave dielectric ceramic BaSiV 2o 8

Technical field

The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.

Background technology

Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.

Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε _rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency _?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ _?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO ₂microwave dielectric filter, but its temperature coefficient of resonance frequency τ _?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε _rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.

(1) ultralow dielectric microwave dielectric ceramic, main representative is Al ₂o ₃-TiO ₂, Y ₂baCuO ₅, MgAl ₂o ₄and Mg ₂siO ₄deng, its ε _r≤ 20, quality factor q × f>=50000GHz, τ _?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.

(2) low ε _rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta ₂o ₅, BaO-ZnO-Ta ₂o ₅or BaO-MgO-Nb ₂o ₅, BaO-ZnO-Nb ₂o ₅system or the composite system MWDC material between them.Its ε _r=20 ~ 35, Q=(1 ~ 2) × 10 ⁴(under the GHz of f>=10), τ _?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.

(3) medium ε _rwith the microwave dielectric ceramic of Q value, mainly with BaTi ₄o ₉, Ba ₂ti ₉o ₂₀(Zr, Sn) TiO ₄deng the MWDC material for base, its ε _r=35 ~ 45, Q=(6 ~ 9) × 10 ³(under f=3 ~-4GHz), τ _?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.

(4) high ε _rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln ₂o ₃-TiO ₂series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li ₂o-Ln ₂o ₃-TiO ₂series, lead base series material, Ca _1-xln _2x/3tiO ₃be contour ε _rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system ₂o ₃-TiO ₂material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO ₃specific inductivity reaches 105.

The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.

Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic _rwith Qf and τ _?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Explore with exploitation can low-temperature sintering have simultaneously near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ _?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.

We are to composition BaSiV ₂o ₈, SrSiV ₂o ₈, CaSiV ₂o ₈series compound carried out the research of microwave dielectric property, find that their sintering temperature is lower than 900 DEG C, but only have BaSiV ₂o ₈there is near-zero resonance frequency temperature coefficient and high quality factor, SrSiV ₂o ₈the temperature coefficient of resonance frequency τ of pottery _?(being-51 ppm/ DEG C) bigger than normal and dielectric loss is also higher and cannot as microwave dielectric ceramic that can be practical.CaSiV ₂o ₈for semi-conductor does not have resonance peak at microwave frequency band.

Summary of the invention

The object of this invention is to provide and a kind of there is good thermostability and low-loss, simultaneously low temperature sintering ultralow dielectric microwave dielectric ceramic material and preparation method thereof.

The chemical constitution of microwave dielectric ceramic material of the present invention is BaSiV ₂o ₈.

Preparation method's step of this microwave dielectric ceramic material is:

(1) be 99.9%(weight percent by purity) more than BaCO ₃, SiO ₂and V ₂o ₅starting powder press BaSiV ₂o ₈composition weigh batching.

(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry.

(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.

Advantage of the present invention: BaSiV ₂o ₈ceramic sintering temperature is low, and raw materials cost is low; Specific inductivity reaches 13.1 ~ 13.7, the temperature factor τ of its resonant frequency _?little, temperature stability is good; Quality factor q f value, up to 87000-128000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device.

Embodiment

Embodiment:

Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.

This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.

Table 1:

Claims (1)

1. a temperature-stable ultralow dielectric microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: BaSiV ₂o ₈;

Preparation method's concrete steps of described microwave dielectric ceramic are:

(1) be 99.9%(weight percent by purity) more than BaCO ₃, SiO ₂and V ₂o ₅starting powder press BaSiV ₂o ₈composition weigh batching;

(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry;

(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.