CN105294075A - High-quality-factor temperature-stable microwave dielectric ceramic Li2ZnGe2O6 and preparation method thereof - Google Patents

High-quality-factor temperature-stable microwave dielectric ceramic Li2ZnGe2O6 and preparation method thereof Download PDF

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Publication number
CN105294075A
CN105294075A CN201510842422.8A CN201510842422A CN105294075A CN 105294075 A CN105294075 A CN 105294075A CN 201510842422 A CN201510842422 A CN 201510842422A CN 105294075 A CN105294075 A CN 105294075A
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dielectric ceramic
microwave dielectric
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preparation
powder
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方维双
程柳
苏和平
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses high-quality-factor temperature-stable microwave dielectric ceramic Li2ZnGe2O6 and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and blending initial powder of Li2CO3, ZnO and GeO2 of which the purity reaches 99.9% by weight percent according to a composition of Li2ZnGe2O6; (2) conducting wet-type ball milling on the raw materials obtained in the step (1) for 12 hours, and carrying out 6 hours' pre-sintering in an atmosphere of 800 DEG C after drying, wherein distilled water is adopted as a ball milling medium; (3) adding a bonding agent into the powder obtained in the step (2) for pelletization, carrying out compression moulding, and finally carrying out 4 hours' sintering in an atmosphere of 850-900 DEG C, wherein a polyvinyl alcohol solution with the mass concentration of 5% is adopted as the bonding agent, and the adding amount of polyvinyl alcohol accounts for 3% of the total mass of the obtained powder. The prepared microwave dielectric ceramic can be well sintered at 900 DEG C or below, the dielectric constant reaches 15.7-16.9, the quality factor, namely the Qf value, reaches up to 91000-155000 GHz, the temperature coefficient of resonance frequency is small, and the industrial application value is high.

Description

High quality factor temperature-stable microwave dielectric ceramic Li 2znGe 2o 6and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10ppm/ DEG C≤τ ?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO 2microwave dielectric filter, but its temperature coefficient of resonance frequency τ ?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=20 ~ 35, Q=(1 ~ 2) × 10 4(under f>=10GHz), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 45, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic rwith Qf and τ ?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Explore and low-temperature sintering can have near-zero resonance frequency temperature coefficient (-10ppm/ DEG C≤τ with exploitation simultaneously ?≤+10ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.
Summary of the invention
The object of this invention is to provide and a kind of there is good thermostability and low-loss, simultaneously low temperature sintering ultralow dielectric microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is Li 2znGe 2o 6.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, ZnO and GeO 2starting powder press Li 2znGe 2o 6composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Advantage of the present invention: Li 2znGe 2o 6ceramic sintering temperature is low, and raw materials cost is low; Its quality factor q f value is up to 91000-155000GHz, and specific inductivity reaches 15.7 ~ 16.9, the temperature factor τ of its resonant frequency ?little, temperature stability is good; The manufacture of the microwave devices such as various substrate, dielectric resonator and wave filter can be widely used in, the technology needs of low temperature co-fired technology and microwave multilayer device can be met.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. a temperature-stable high quality factor ultralow dielectric microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: Li 2znGe 2o 6;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, ZnO and GeO 2starting powder press Li 2znGe 2o 6composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 850 ~ 900 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
CN201510842422.8A 2015-11-29 2015-11-29 High-quality-factor temperature-stable microwave dielectric ceramic Li2ZnGe2O6 and preparation method thereof Pending CN105294075A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105523754A (en) * 2016-02-17 2016-04-27 桂林理工大学 Microwave dielectric ceramic Cu3ZnTiGe3O12 with high quality factor and ultralow dielectric constant and preparation method of microwave dielectric ceramic Cu3ZnTiGe3O12
CN105669185A (en) * 2016-02-20 2016-06-15 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic Na2Zn2TiGeO7 and preparation method thereof
CN105777102A (en) * 2016-02-17 2016-07-20 桂林理工大学 High-quality-factor ultra-low-dielectric-constant microwave dielectric ceramic Cu3La2Ge3O12 and preparation method thereof
CN106116526A (en) * 2016-06-26 2016-11-16 桂林理工大学 Low temperature sintering temperature-stable microwave dielectric ceramic Li5cu8ga5ge9o36
CN106116527A (en) * 2016-06-26 2016-11-16 桂林理工大学 Li5zn8ga5ge9o36application as low-loss temperature-stabilized microwave dielectric ceramic
CN106242528A (en) * 2016-07-19 2016-12-21 桂林理工大学 High quality factor temperature-stable microwave dielectric ceramic Li2znGe2o6
CN106278243A (en) * 2016-07-19 2017-01-04 桂林理工大学 Li2znSn2o6application as high quality factor temperature-stable dielectric constant microwave dielectric ceramic

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104478423A (en) * 2014-11-06 2015-04-01 桂林理工大学 Ultralow-dielectric-constant dielectric ceramic Li2Zn2Si2O7 and preparation method thereof
CN104478424A (en) * 2014-11-09 2015-04-01 桂林理工大学 Ultralow-dielectric-constant dielectric ceramic Li2Zn3Si2O8 and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104478423A (en) * 2014-11-06 2015-04-01 桂林理工大学 Ultralow-dielectric-constant dielectric ceramic Li2Zn2Si2O7 and preparation method thereof
CN104478424A (en) * 2014-11-09 2015-04-01 桂林理工大学 Ultralow-dielectric-constant dielectric ceramic Li2Zn3Si2O8 and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105523754A (en) * 2016-02-17 2016-04-27 桂林理工大学 Microwave dielectric ceramic Cu3ZnTiGe3O12 with high quality factor and ultralow dielectric constant and preparation method of microwave dielectric ceramic Cu3ZnTiGe3O12
CN105777102A (en) * 2016-02-17 2016-07-20 桂林理工大学 High-quality-factor ultra-low-dielectric-constant microwave dielectric ceramic Cu3La2Ge3O12 and preparation method thereof
CN105669185A (en) * 2016-02-20 2016-06-15 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic Na2Zn2TiGeO7 and preparation method thereof
CN106116526A (en) * 2016-06-26 2016-11-16 桂林理工大学 Low temperature sintering temperature-stable microwave dielectric ceramic Li5cu8ga5ge9o36
CN106116527A (en) * 2016-06-26 2016-11-16 桂林理工大学 Li5zn8ga5ge9o36application as low-loss temperature-stabilized microwave dielectric ceramic
CN106242528A (en) * 2016-07-19 2016-12-21 桂林理工大学 High quality factor temperature-stable microwave dielectric ceramic Li2znGe2o6
CN106278243A (en) * 2016-07-19 2017-01-04 桂林理工大学 Li2znSn2o6application as high quality factor temperature-stable dielectric constant microwave dielectric ceramic

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