CN104835771A - 基片保持系统和方法 - Google Patents
基片保持系统和方法 Download PDFInfo
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
一种加工期间用于机械地保持基片的系统,该系统包括可关闭的加工室和位于加工室内构造用于通过三个机械保持组件对晶片进行保持的上块组件。这三个机械保持组件凸出于晶片加工室的封盖并配置为在晶片的边缘将晶片保持住,且可从加工室的外部进行调整。机械保持组件中两个组件可相对于晶片的边缘锁定在合适位置,其中一个机械保持组件用于通过预紧机构对在晶片边缘上的保持预紧进行维持。
Description
技术领域
共同未决申请的交叉引用
本申请要求2014年1月20日提出的申请号为61/929,192,名称为“基片保持方法和系统”的美国临时申请的优先权,其内容通过引用明确地并入本申请中。
本申请是2010年4月15日提出的申请号为12761044,名称为“晶片定中心设备”的美国申请的部分继续申请,其内容通过引用明确地并入本申请中。
本发明涉及一种用于保持基片的系统和方法,特别地地涉及一种加工期间机械地保持基片同时保持基片的同心和旋转排布的系统和方法。
背景技术
在几个晶片接合工序中,两片或更多排布好的晶片被相对彼此保持,然后彼此接触。类似地,在几个化学的或机械的半导体工序中,晶片在加工期间被保持在合适的位置。在这些半导体晶片工序中,部分工序包括晶片减薄步骤。特别地,对于某些应用,为了制造集成电路(IC)设备,或为了3D集成接合和制造时穿过晶片孔,晶片被减薄至小于100微米的厚度。
对于大于200微米的晶片厚度,晶片通常采用固定装置保持在合适的位置,该固定装置利用真空卡盘或其他机械连接装置。但是,对于小于200微米的晶片厚度,特别是对于小于100微米的晶片厚度,在加工期间机械地保持住晶片并维持对晶片排布、平面性和晶片完整性的控制变得越来越难。在这些情形下,加工期间晶片产生微小裂痕并破碎事实上是很常见的。在减薄工序期间使晶片厚度小于200微米机械地保持晶片的一种替换方案包括将器件晶片(即被加工成器件的晶片)的第一表面贴到载体晶片上,然后对暴露的、相对的器件晶片表面进行减薄。载体晶片和器件晶片之间的接合是临时的并在减薄工序和任何其他加工步骤完成时撤除。减薄工序期间,临时接合的器件晶片和载体晶片对被机械地保持。
加工期间机械地保持晶片的一种替代方案包括使用静电卡盘(e卡盘)通过静电力将晶片予以保持。但是,e卡盘通常是价格高昂、复杂的设备,需要高压电源和高压电缆。此外,它们通常不适用于玻璃基片的保持。
上述晶片保持机构的关键方面包括被保持晶片相对于彼此的定位和排布。理想的是,提供一种工业级设备,所述设备用于加工期间保持和支撑晶片同时维持晶片同心和旋转排布,并避免晶片破裂、表面损伤或翘曲。
发明内容
本发明提供一种用于加工期间机械地保持基片同时维持基片同心和旋转排布的系统和方法。
总之,本发明的一个方面突出一种晶片加工系统,所述加工系统包括可关闭的加工室和位于加工室内构造用于通过三个机械保持组件对晶片进行保持的上块组件。这三个机械保持组件凸出于晶片加工室的封盖并配置为在晶片的边缘将晶片保持住,且可从加工室的外部进行调整。机械保持组件中两个组件可相对于晶片的边缘锁定在合适位置,其中一个机械保持组件设置用于通过预紧机构对在晶片边缘上的保持预紧进行维持。
本发明这个方面的实施包括一个或一个以上如下方案。每个机械保持组件包括一个标识部件和一个枢转驱动臂,所述标识部件通过驱动机构径向地驱动,以便接触到晶片的边缘。在可锁定的两个机械保持组件的每一个组件中,标识部件的远端配置为接触晶片边缘,而枢转驱动臂配置成偏斜运动以便用一根插销卡住在标识部件近端侧形成的狭槽。在对预保持进行维持的机械保持组件中,预紧机构包括耐高温轴承引导的线性滑块。每个机械保持组件中的驱动机构包括一个气动活塞和一个驱动臂,气动活塞连接至驱动臂并配置成驱动所述驱动臂,而驱动臂通过传动轴和枢转驱动臂连接至标识部件。在两个可锁定的机械保持组件中的每个机械保持组件中,所述驱动机构进一步包括制动柱体,所述制动柱体配置为驱动柔性制动臂,而所述柔性制动臂配置为通过传动轴将制动动作传递给枢转驱动臂。柔性制动臂具有平面内刚性而平面外柔性的挠曲型材料。所述标识部件为板状并由包括在上块组件中的卡盘支撑,具有从卡盘外缘横跨至晶片边缘的长度尺寸。标识部件的远端具有台阶。标识部件的远端是弯曲的。标识部件的远端具有与晶片边缘曲率匹配和互补的曲率。标识部件的远端具有保护层,用于保护晶片边缘的完整性,当标识部件的远端触碰晶片边缘时提供减震作用,以及提供标识部件的远端与晶片边缘之间稳固保持的摩擦作用。保护层由耐高温的聚醚醚酮(PEEK)层、聚酰亚胺层或特氟龙层制成。标识部件远端的的侧面轮廓是直的、有角度的或弯曲的。
一般而言,另一方面,本发明突出一种晶片保持系统,所述保持系统包括三个用于在晶片边缘处保持晶片的机械保持组件。机械保持组件中的两个组件可相对于晶片的边缘锁定在合适位置,其中一个机械保持组件用于通过预紧机构对在晶片边缘上的保持预紧进行维持。
该系统可以用于在真空中保持基片,也用于保持受重力作用的基片。该系统也适用于在器件晶片的加工期间保持一对临时接合的晶片。
本发明的一个或多个实施例在下面的附图和说明书进行详细说明。由实施例、附图和权利要求可知,本发明的其他特征、目的和优点将是很明显的。
附图说明
参照附图(各视图中,相同的数字表示相同的部件):
图1A是根据本发明的晶片接合器模组的透视图;
图1B是图1A的晶片接合器模组沿X-X’平面的横截面图;
图1C是图1A的晶片接合器模组沿Y-Y’平面的横截面图;
图1D是图1B的晶片接合器模组A区中的上块组件(或加工室封盖)的横截面图详图;
图1E是图1A的晶片接合器模组的示意图;
图2是根据本发明晶片接合器系统闭合结构的透视图;
图3是图2的晶片接合器系统打开结构的透视图;
图4A描述图2中保持住直径为200mm晶片的晶片接合器模组的上块组件(或加工室封盖);
图4B描述图2中保持住直径为300mm的晶片的晶片接合器模组上块组件(或加工室封盖);
图5A是图2中保持住直径为200mm晶片的晶片接合器模组上块组件(或加工室封盖)的透视图;
图5B是图5A中的上块组件(或加工室封盖)B区断面图的放大详图;
图5C是图2的晶片接合器模组沿X-X’平面的放大横截面图;
图6A是图5C的晶片接合器模组C区的放大详图;
图6B-图6D描述图6A中标识部件112的另一种端面轮廓;
图7A是图4A的晶片保持组件110A的放大仰视图;
图7B是图4B的晶片保持组件110A的放大仰视图;
图8A是图4A的晶片保持组件110A的标识部件驱动机构的放大顶(俯)视图;
图8B是图8A的标识部件驱动机构的横截面图;
图8C是图8A的标识部件驱动机构的底横截面图;
图8D是图8B的标识部件驱动机构的放大横截面图。
具体实施方式
本发明提供一种用于加工期间机械地保持基片同时维持基片同心和旋转排布的系统和方法。
参照图1A-图1E,典型的晶片接合器模组210包括具有加载门211的壳体212、上块组件220和相向的下块组件230。上块组件220和下块组件230可运动地连接至Z-导柱242。在其他的实施例中,使用的Z-导柱少于四个或大于四个。套管式密封帘235位于上块组件220和下块组件230之间。在上块组件220和下块组件230与套管式密封帘235之间形成接合室202。密封帘235使接合室区域202外的诸多加工部件与加工室的温度、压力、真空和大气压隔绝。位于接合室区域202之外的加工部件包括导柱242、Z轴驱动器243、照明光源、预排布机械臂和晶片定中心爪具以及其他加工部件。密封帘235还可从任何径向方向进入接合室202。对典型的晶片接合器模组210更详细的描述在名称为“晶片定中心设备”的美国申请2010/0266373A1(美国专利8,764,026)中提出,其内容通过引用明确合并于此。
参照图1B,下块组件230包括支撑晶片20的加热板232、隔热层236、水冷支撑法兰237、传递插销台238和Z轴块件239。加热板232是陶瓷板,包括耐热元件和集成的空冷。加热元件设置成能够形成两个不同的加热区:主区或中央区和边缘区。对这两个加热区进行控制以使加热板232的温度是均一的。加热板232还包括两个分别用于保持200mm和300mm晶片的不同真空区。水冷热隔离支撑法兰237通过隔热层236与加热板隔离。传递插销台238设置在下块组件230的下方并可运动地由四根支柱242支撑。传递插销台238支撑起这样设置的传递销240,即,它们能够托起或降低不同尺寸的晶片。在一个实施例中,传递销240设置成它们能够升起或降低200mm和300mm的晶片。传递销240是直的传动轴,在一些实施例中,具有穿过中心的真空进料开口。运动期间,通过传递销开口抽取的真空在合适的位置将被支撑的晶片保持在传递销上并防止晶片对不齐。Z轴块件239包括带滚珠螺杆、直线凸轮设计的精密Z轴驱动器243、用于亚微米定位控制的线性编码器反馈244、以及具有齿轮箱的伺服电机246,如图1C所示。
参照图1D,上块组件220包括上陶瓷卡盘222、上静态室壁221(密封帘235采用密封元件235a紧靠上静态室壁进行密封)、200mm的薄膜层224a和300的薄膜层224b。薄膜层224a、224b分别被夹在上卡盘222和具有夹具215a,215b的外壳顶壁213之间,形成两个独立的真空区,这两个真空区设计分别用于保持住200mm和300mm的晶片。薄膜层224a、224b由弹性体材料或金属波纹管制成。上陶瓷卡盘222非常平坦和纤薄。其质量小,同时也是半柔性的,以便在晶片20、30上施加均匀的压力。上卡盘222轻轻地用薄膜压力预加载,贴到三个可调的水平夹具/驱动组件216上。夹具/驱动组件216间隔120度圆形布置。上卡盘222首先被放平,同时与下陶瓷加热板232接触,以便其平行于加热板232。夹具/驱动组件216还提供球形楔误差补偿(WEC)机构,该球形楔误差补偿机构将陶瓷卡盘222绕着与被支撑晶片的中心对应的中心点转动和/或倾斜,而不发生平移。在其他实施例中,上陶瓷卡盘222的定位由固定水平/定位销完成,上陶瓷卡盘222贴着定位销被束紧。
参照图2和图3,改进的晶片接合系统100包括改进的晶片接合室210和电子单元250。晶片接合室210包括铰接盖225,所述铰接盖包括上块组件220。在该实施例中,晶片30通过三个机械保持组件110A、110B和110C被支撑在上卡盘222上。机械保持组件110A、110B和110C凸出于封盖225。
参照图4A-8D,每个机械保持组件包括标识部件112和枢转驱动臂114。标识部件112被径向地驱动,使上晶片30的边缘30a接触驱动机械150。在其中的两个保持组件110A、110C中,一旦标识部件112的远端边缘113接触晶片30a的边缘,枢转驱动臂114偏斜运动,以便用插销119卡住在标识部件112的近端118的一侧118a形成的狭槽117,如图5B和图7A所示。驱动臂插销119与标识部件狭槽117的卡住配合将112标识部件的位置相对于保持组件110A和110C中的晶片边缘30a进行锁定。在保持组件110B中,标识部件112对采用气动或弹簧驱动预紧机构160完成的保持预紧进行维持,如图8D所示。在一个实施例中,预紧机构包括耐高温轴承引导的线性滑块116,如图7A所示。
参照图8A-8D,每个保持组件110A、110B、110C的驱动机构150包括气动活塞152和驱动臂154。气动活塞152包括一端连接至驱动臂154第一端并用于引导驱动臂154的运动的柱体152a。驱动臂154具有第二端,所述第二端通过传动轴155与标识部件112以及与枢转驱动臂114相连接。8B和图8D所示。活塞152、驱动臂154和传动轴155对标识部件112的径向运动进行驱动并引导。传动轴155的运动由包含在壳体162内的滚珠轴承159a、159b进行引导,如图8D所示。壳体162采用O形圈密封件161a、161b密封在上块组件220内,如图8D所示。
在保持组件110A、110C每个保持部件中的驱动机构150还包括驱动柔性制动臂157的制动柱体156。柔性制动臂157也通过传动轴155将制动动作传递给枢转驱动臂114。柔性制动臂157由挠曲型材料制成,所述挠曲型材料具有平面内刚度并且提供对枢转驱动臂114的稳固锁定。柔性制动臂157在平面内方向上(制动臂157的x-y平面)是刚性的,而在平面方向外(z轴165)是柔性的。
操作中,晶片30采用如2010年4月15日提出的申请号为12761044,名称为“晶片定中心设备”的美国申请描述的定中心工作台确定中心,其内容通过引用明确地加入本申请中。此外,晶片30通过精密的机器人晶片布置确定中心。确定中心后的晶片30被转移到上卡盘222上并最初利用真空保持。或者,确定中心后的晶片可以通过静电卡盘或真空与静电卡盘的组合进行保持。
接着,三个保持组件110A、110B和110C中的标识部件112被径向驱动以便与晶片的边缘30a接触。在执行该步骤期间,真空(或静电)保持机构是主要的,而标识部件112的径向运动是次要的。因此,标识部件112的初始位置由交接位置和保持力决定。这就使设备能够保持住除标称尺寸以外的不同直径公差的圆形晶片。在一个实施例中,具有设计用于保持住300mm晶片的标识部件112的设备可用于保持直径为301mm或299mm的晶片。
接着,保持组件110A和110C的标识部件112中的制动部件156和157,同时保持组件110B中的标识部件112采用弹簧160对保持预紧进行维持。两个锁定的保持组件110A、110C确定两个固定点,保持组件110B的预紧力将晶片稳固地保持住。由于加工期间的热膨胀或在系统中的其他挠曲,保持组件110B的预紧力对稳定的保持状态进行补偿并维持这种保持状态。此时,可以撤去真空(或静电)保持机构。
接下来进行晶片的加工,同时晶片30采用三个保持组件110A、110B和110C机械地保持在合适位置。晶片30在加工结束时被释放或者通过释放保持组件110B中的预紧机构在任何点释放。
标识部件112为板形并具有从上卡盘222外缘横跨至晶片30的外缘30a的长度尺寸。不同长度尺寸的标识部件用于保持直径为200mm或直径为300mm的晶片,分别如图4A、图4B、图7A和图7B所示。标识部件112的远端边缘113包括台阶111,当将两块晶片20、30接触时,所述台阶为下晶片20提供足够的间隙,如图6A所示。远端边缘113的端面113a是弯曲的。端面113a的曲率与晶片30外边缘30a的曲率匹配并互补。远端边缘113的端面113a涂有保护晶片边缘30a完整性并提供两个端面113a与30a相互触碰时的减震功能的保护层。保护层还增加两个端面113a与30a之间稳固保持的摩擦作用。其中端面113a保护层的例子包括耐高温聚醚醚酮(PEEK)涂层、聚酰亚胺涂层或特氟龙涂层等。端面113a的侧面轮廓可以是直的、有角度的或弯曲的,分别如图6B,图6C和图6D所示。
现已对本发明的几个实施例进行了说明。但是,将可以理解的是,在不偏离本发明精神和范围的情况下可以做出各种变型。因此,其他实施例也在下面的权利要求的范围之内。
Claims (16)
1.一种晶片保持系统,包括:
三个配置成在晶片边缘处保持晶片的机械保持组件;以及
其中,机械保持组件中的两个组件相对于晶片的边缘可锁定在合适的位置,而其中一个机械保持组件配置成通过预紧机构对在晶片边缘上的保持预紧进行维持。
2.根据权利要求1所述的系统,其中每个机械保持组件包括一个标识部件和一个枢转驱动臂,其中,所述标识部件通过驱动机构径向地驱动,以便接触到晶片的边缘。
3.根据权利要求2所述的系统,其中在可锁定的两个机械保持组件的每一个中,标识部件的远端配置成接触晶片边缘,而枢转驱动臂配置成偏斜运动以便用插销卡住在标识部件近端侧形成的狭槽。
4.根据权利要求2或3所述的系统,其中在对保持预紧进行维持的一个机械保持组件中,预紧机构包括耐高温轴承引导的线性滑块。
5.根据权利要求2、3或4所述的系统,其中每个机械保持组件中的驱动机构包括气动活塞和驱动臂;其中,气动活塞与驱动臂连接并配置成驱动所述驱动臂;其中,驱动臂通过传动轴和枢转驱动臂与所述标识部件连接。
6.根据权利要求5所述的系统,其中在两个可锁定的机械保持组件的每个机械保持组件中,所述驱动机构进一步包括配置为驱动柔性制动臂的制动柱体,而所述柔性制动臂配置为通过传动轴将制动动作传递给枢转驱动臂。
7.根据权利要求6所述的系统,其中所述柔性制动臂包括平面内刚性而平面外柔性的挠曲型材料。
8.根据权利要求2-7任一项所述的系统,其中所述标识部件是板状的并由卡盘支撑,且具有从卡盘外缘横跨至晶片边缘的长度尺寸。
9.一种晶片加工系统,包括:
可关闭的加工室;
位于加工室内的上块组件,所述上块组件配置为通过具有三个如权利1-7任一项所述机械保持组件的晶片保持系统对晶片进行保持;
其中,这三个机械保持组件凸出于晶片加工室的封盖并配置为在晶片的边缘将晶片保持住且可从加工室的外部进行调整。
10.根据权利要求9所述的系统,其中所述标识部件为板状并由包括在上块组件内的卡盘支撑,且具有从卡盘外缘横跨至晶片边缘的长度尺寸。
11.根据权利要求9或10所述的系统,其中所述标识部件的远端包括台阶。
12.根据权利要求9-11任一项所述的系统,其中所述标识部件的远端是弯曲的。
13.根据权利要求12所述的系统,其中标识部件的远端包括与晶片边缘匹配并互补的曲率。
14.根据权利要求9-13任一项所述的系统,其中标识部件的远端具有保护层,所述保护层配置为保护晶片边缘的完整性,当标识部件的远端触碰晶片边缘时提供减震作用,以及提供标识部件远端与晶片边缘之间稳固保持的摩擦作用。
15.根据权利要求14所述的系统,其中所述保护层包括耐高温的聚醚醚酮(PEEK)层、聚酰亚胺层或特氟龙层中的一种。
16.根据权利要求9-15任一项所述的系统,其中所述标识部件的远端是直的、有角度的或弯曲的。
Applications Claiming Priority (4)
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Application publication date: 20150812 |