TWI702681B - 晶圓傳輸裝置 - Google Patents
晶圓傳輸裝置 Download PDFInfo
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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Abstract
一種晶圓傳輸裝置,包含負載腔模組、設備前端模組和轉換腔模組。負載腔模組具有第一側與第二側,在第一側與第二側之間連通形成至少一負載腔室,該負載腔室內設有至少一對晶圓支架,每一晶圓支架包含一主體,該主體平行延伸一對支撐臂,且每一支撐臂上設有一支撐球和一置中限位塊。設備前端模組銜接配置於負載腔模組的第一側。轉換腔模組銜接配置於負載腔模組的第二側。
Description
本發明是有關於一種涉及半導體製程設備的晶圓傳輸裝置,特別是涉及一種在使用真空端與大氣端之間的負載腔模組中使用分體設計的晶圓支架結構之晶圓傳輸裝置。
在半導體製程設備中,進行晶圓加工時常常需要在真空壓力下進行,晶圓在傳入或傳出反應腔室時,需要一種負載腔模組作為壓力在真空與大氣狀態下的過度環境。為了達到晶圓的正常傳遞,晶圓的放置在支架上的位置必須滿足一定的精度,然而當機械手臂傳遞晶圓至負載腔模組內的晶圓支架,晶圓在負載腔室內進行處理後,晶圓的位置相對於正常傳遞位置可能存在一定的偏移。
晶圓的加工質量對其表面的顆粒度也有嚴格的要求。通常所使用的晶圓支架,一類是金屬材料支架如鋁合金,晶圓與支架接觸時產生的顆粒會影響晶圓的最終加工質量;另一類是有機材料如聚醚醚酮(polyetheretherketone,PEEK),只能承受較低的溫度,然而加工後的晶圓通常溫度較高,造成支架上與晶圓接觸處有軟化磨損的情況,進而產生大量的顆粒影響晶圓的最終加工質量。
有鑑於此,本發明揭露為一種經過改良的晶圓傳輸裝置。
根據本發明揭露的一實施方式,一種晶圓傳輸裝置,包含負載腔模組、設備前端模組和轉換腔模組,其中該負載腔模組具有第一側與第二側,在第一側與第二側之間連通形成至少一負載腔室,負載腔室內設有至少一對晶圓支架,每一晶圓支架包含一主體,該主體平行延伸一對支撐臂,且每一支撐臂上設有支撐球和置中限位塊;設備前端模組銜接配置於負載腔模組的第一側;轉換腔模組銜接配置於負載腔模組的第二側。
在一實施例中,該對晶圓支架為分體設計,且設置於該負載腔室的相對側壁上。
在一實施例中,支撐球和置中限位塊之材料為單晶體材料。
在一實施例中,晶圓支架的主體設置於該負載腔室的相對側壁的其中一側壁。
在一實施例中,支撐球設置在支撐臂上遠離負載腔室的側壁,且支撐球為可旋轉或固定不會脫落。
在一實施例中,置中限位塊設置在支撐臂上靠近負載腔室的側壁。
在一實施例中,置中限位塊具有軸心,且形成平行於軸心的限位面,以及與該軸心間具有一夾角的對中面。
在一實施例中,置中限位塊的軸心到該對晶圓支架所支承之晶圓的圓心之距離大於晶圓的半徑。
在一實施例中,負載腔室內設有兩對晶圓支架,兩對晶圓支架彼此疊加安裝於負載腔室的相對側壁。
在一實施例中,該對晶圓支架的該些支撐球用於支撐一晶圓的下表面。
在本揭露的上述的實施例中,晶圓支架的支撐球用以支撐晶圓的下表面,晶圓支架的置中限位塊用以限制晶圓的位置,以確保每次晶圓支架支撐晶圓於相同的位置上,進而達到將晶圓2自動置中定位的功效。
對於相關領域一般技術者而言這些與其他的觀點與實施例在參考後續詳細描述與伴隨圖示之後將變得明確。
100:晶圓傳輸裝置
10:設備前端模組
20:負載腔模組
201:第一側
202:第二側
21:負載腔室
22:前端隔離閥門
23:蓋板
24:後端隔離閥門
25:晶圓支架
251:主體
252:支撐臂
253:支撐臂
254:晶圓支架
255:晶圓支架
26:支撐球
28:置中限位塊
28a:對中面
28b:限位面
200:晶圓
A:軸心
R:半徑
r:半徑
O:圓心
圖式所示之結構大小比例並不限制本發明的實際實施。
第一圖為一種根據本揭露一實施例之晶圓傳輸裝置的立體圖;第二圖為第一圖之負載腔模組的立體圖;第三圖為第二圖之負載腔模組取出蓋板後的立體圖;第四圖為第三圖之晶圓支架的立體圖;第五圖為第四圖之置中限位塊的立體圖;第六圖為第四圖之支撐臂的局部放大側視圖;第七圖為另一實施例之雙層晶圓支架的立體圖。
本發明提供一種用於晶圓處理設備的晶圓傳輸裝置。晶圓傳輸裝置中的負載腔室提供了一種晶圓支架結構,此晶圓支架結構具有將晶圓自動置中的功能,可以確保晶圓在傳遞過程中的精度,並且同時可以充份地減少顆粒的產生和聚集。
現在將參考本發明之伴隨圖式詳細描述實施例。在該伴隨圖式中,相同及/或對應元件系以相同參考符號所表示。
在此將揭露各種實施例;然而,要瞭解到所揭露之實施例只用于作為可體現為各種形式之例證。此外,連接各種實施例所給予之每一範例都預期作為例示,而非用於限制。進一步的,該圖式並不一定符合尺寸比例,某些特徵系被放大以顯示特定元件之細節(且該圖式中所示之任何尺寸、材料與類似細節都預期僅為例示而非限制)。因此,在此揭露之特定結構與功能細節並不被解釋做為限制,而只是用於教導相關領域技術人員實作所揭露之實施例的基礎。
請參考第一圖,顯示本發明的一種晶圓傳輸裝置100的立體圖。本發明晶圓傳輸裝置100包含設備前端模組10、負載腔模組20和轉換腔模組30。負載腔模組20具有第一側201與第二側202,在第一側201與第二側202之間連通形成至少一負載腔室21(見第三圖所示)。設備前端模組10銜接配置於負載腔模組20的第一側201。轉換腔模組30銜接配置於負載腔模組20的第二側202。
請參考第二圖,顯示第一圖所示負載腔模組20的立體圖。負載腔模組20的腔體在第一側201設置前端隔離閥門22,在上表面設置蓋板
23以及在第二側設置後端隔離閥門24。蓋板23用以密封在第一側201與第二側202之間所形成的負載腔室21(見第三圖所示),而前端隔離閥門22位在第一側201以密封負載腔室21與設備前端模組10之間的連通,後端隔離閥門24位在第二側202以密封負載腔室21與轉換腔模組30之間的連通。
請參考第三圖與第四圖,分別顯示第二圖所示負載腔模組20取出蓋板23後的立體圖,以及第三圖所示晶圓支架25的立體圖。同時參照第三圖和第四圖所示,每一負載腔室21內設有一對晶圓支架25用以支撐一晶圓(圖未示),每一晶圓支架25包含一主體251,該主體251平行延伸一對支撐臂,分別為支撐臂252和支撐臂253。支撐臂253的上表面設置或形成有一支撐球26和一置中限位塊28,支撐臂252上亦設有支撐球和置中限位塊,不重複贅述。該對晶圓支架25的四個支撐球26用以支撐該晶圓的下表面,該對晶圓支架25的四個置中限位塊28用以限制該晶圓的位置,以確保每次該對晶圓支架25支撐一晶圓於相同的位置上。
在本實施例中,該對晶圓支架25為分體設計,且分別設置於負載腔室21的相對側壁上。晶圓支架25的主體251設置於負載腔室21的相對側壁的其中一側壁,而兩晶圓支架25的支撐臂252、253相向自主體251平行延伸而出。
在本實施例中,支撐球26設置在支撐臂253上遠離負載腔室21的側壁,且支撐球26使用特殊製程安裝在該支撐臂253所預設的球槽內,俾使支撐球26為可旋轉或固定不會脫落。在本實施例中,置中限位塊28設置在支撐臂253上靠近負載腔室21的側壁,且置中限位塊28位在該支撐臂253所預設的安裝槽內,而與安裝槽為過盈配合,俾使置中限位塊28
不會脫落。另一支撐臂252上支撐球和置中限位塊的位置關係和結構與支撐臂253的位置關係和結構相似,不重複贅述。
在本實施例中,支撐球26和置中限位塊28之材料為單晶體材料,因此不容易產生顆粒,且可以承受較高的溫度,同時可以降低對主體251的材料要求。
請參考第五圖,顯示第四圖所示置中限位塊28的立體圖。置中限位塊28具有軸心A,且置中限位塊28形成平行於該軸心A的限位面28b,以及與該軸心A間具有一夾角的對中面28a。
接著參考第六圖,顯示第四圖所示支撐臂253的局部放大側視圖。當機械手臂承載一晶圓200進入負載腔室21,並位移至本發明晶圓支架25的上方後,該機械手臂會下降使該晶圓200由本發明晶圓支架25所支撐。由於置中限位塊28的軸心A與對中面28a具有一夾角,因此當晶圓200的位置有偏移時,隨該機械手臂的下降該晶圓200的邊緣會沿對中面28a向下滑落,使晶圓200之圓心O到達由4個置中限位塊28所限制之中心位置,因此達到將晶圓200自動置中定位的功能。此外,置中限位塊28的軸心A到晶圓支架25所支承之晶圓200的圓心O之距離R大於晶圓的半徑r。
請參考第七圖,顯示另一實施例之雙層晶圓支架的立體圖。負載腔室21內設有兩對晶圓支架,分別為晶圓支架254和晶圓支架255,晶圓支架254和晶圓支架255。兩對晶圓支架彼此疊加安裝於該負載腔室21的相對側壁。然而,晶圓支架安裝之數量可視該負載腔室21的內部空間而決定。每對晶圓支架可以承載一片晶圓,透過晶圓支架彼此疊加安
裝,可以提高負載腔室的傳送效率,使得設備前端模組至轉換腔模組之間經由負載腔室可以一次傳遞多片晶圓,以提高處理的產能。
雖然已經以一或多個實施例描述本發明之負載腔室,要瞭解到本發明揭露內容並不限制於所揭露的實施例。本發明于器涵蓋在申請專利範圍之精神與觀點中所包含的各種修改與類似配置,應給予此觀點最廣泛的詮釋,以包含所有之修改與類似結構。本發明揭露內容也包含下述申請專利範圍中的所有任何實施例。
20:負載腔模組
21:負載腔室
23:蓋板
25:晶圓支架
Claims (9)
- 一種晶圓傳輸裝置,包含:一負載腔模組,具有一第一側與一第二側,在該第一側與該第二側之間連通形成至少一負載腔室,該負載腔室內設有至少一對晶圓支架,每一晶圓支架包含一主體,該主體平行延伸一對支撐臂,且每一支撐臂上設有一支撐球和一置中限位塊,其中該對晶圓支架為分體設計,且設置於該負載腔室的相對側壁上;一設備前端模組,銜接配置於該負載腔模組的該第一側;以及一轉換腔模組,銜接配置於該負載腔模組的該第二側。
- 如請求項1所述之晶圓傳輸裝置,其中該支撐球和該置中限位塊之材料為單晶體材料。
- 如請求項1所述之晶圓傳輸裝置,其中該晶圓支架的該主體設置於該負載腔室的相對側壁的其中一側壁。
- 如請求項3所述之晶圓傳輸裝置,其中該支撐球設置在該支撐臂上遠離該負載腔室的該側壁,且該支撐球為可旋轉或固定不會脫落。
- 如請求項4所述之晶圓傳輸裝置,其中該置中限位塊設置在該支撐臂上靠近該負載腔室的該側壁。
- 如請求項1所述之晶圓傳輸裝置,其中該置中限位塊具有一軸心,且形成一平行於該軸心的限位面,以及一與該軸心間具有一夾角的對中面。
- 如請求項6所述之晶圓傳輸裝置,其中該置中限位塊的軸心到一該對晶圓支架所支承之晶圓的圓心之距離大於該晶圓的半徑。
- 如請求項1所述之晶圓傳輸裝置,其中該負載腔室內設有兩對晶圓支架,兩對晶圓支架彼此疊加安裝於該負載腔室的相對側壁。
- 如請求項1所述之晶圓傳輸裝置,其中該對晶圓支架的該些支撐球用於支撐一晶圓的下表面。
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CN201811396522.2A CN111211082B (zh) | 2018-11-22 | 2018-11-22 | 晶圆传输装置 |
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US6116848A (en) * | 1997-11-26 | 2000-09-12 | Brooks Automation, Inc. | Apparatus and method for high-speed transfer and centering of wafer substrates |
US20080099451A1 (en) * | 2006-10-30 | 2008-05-01 | Richard Lewington | Workpiece rotation apparatus for a plasma reactor system |
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US6116848A (en) * | 1997-11-26 | 2000-09-12 | Brooks Automation, Inc. | Apparatus and method for high-speed transfer and centering of wafer substrates |
US20080099451A1 (en) * | 2006-10-30 | 2008-05-01 | Richard Lewington | Workpiece rotation apparatus for a plasma reactor system |
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