CN104833508A - Signal bias amplification type gearbox test system based on self-gain control - Google Patents
Signal bias amplification type gearbox test system based on self-gain control Download PDFInfo
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Abstract
The present invention discloses a signal bias amplification type gearbox test system based on self-gain control. The system is formed by a gearbox (1), a driving module (2) which is connected to the gearbox (1), a resistance system (3), a vibration sensor (6), a temperature sensor (5), a torque sensor (4), a torque signal processing module (8) which is connected to the torque sensor (4), a bias amplifier circuit (9) which is connected to the torque signal processing module (8) and a single chip microcomputer (7) which is connected to the temperature sensor (5) and the vibration sensor (6). The system is characterized in that a self-gain control circuit (10) is arranged between the bias amplifier circuit (9) and the single chip microcomputer (7), a torque signal is more stable through the effect of the self-gain control circuit, thus the precision of a torque test is improved, and the evaluation of the performance of the gearbox by test personnel is facilitated.
Description
Technical field
The present invention relates to a kind of wheel box test macro, specifically referring to that a kind of signal based on controlling from gain is biased amplifying type wheel box test macro.
Background technology
Along with the fast development of auto industry technology, the automatic gear for vehicle of various ways occurs in succession.Mainly contain: hydraulic mechanical type wheel box (AT), electrical control automatic manual transmission case (AMT), mechanical stepless wheel box (CVT).Wherein, the favor that electrical control automatic manual transmission case (AMT) is simple with its structure, efficiency is high, cost performance advantages of higher is just being subject to each automobile vendor.Automation wheel box is as the core component of vehicle, and the dynamic property of its performance and car load, economy and comfortableness are closely related.And by experiment each performance of wheel box is tested, to go forward side by side line parameter analysis and contrast with the performance parameter obtaining wheel box, for the improvement of product and optimization provide reliable foundation, being the important means developing AMT, is also the necessary stage of carrying out the exploitation of AMT real vehicle.Therefore, the wheel box test macro for testing wheel box performance then seems by for important.But traditional wheel box test macro is when testing gearbox torque, it can cause jitter in the process processed torque signal, makes torsion-testing inaccurate, and this just have impact on the assessment of system to wheel box performance.
Summary of the invention
The object of the invention is to overcome the defect that can cause jitter in the process that traditional wheel box test macro processes torque signal, providing a kind of signal based on controlling from gain to be biased amplifying type wheel box test macro.
Object of the present invention is achieved through the following technical solutions: a kind of signal based on controlling from gain is biased amplifying type wheel box test macro, by wheel box, the driver module be connected with wheel box, resistance system, vibration transducer, temperature sensor, torque sensor, the torque signal processing module be connected with torque sensor, the bias amplifier be connected with torque signal processing module, the single-chip microcomputer be simultaneously connected with temperature sensor, vibration transducer, is also provided with from gain control circuit between bias amplifier and single-chip microcomputer.
Further, described from gain control circuit by triode VT8, triode VT9, unidirectional thyristor D6, negative pole is connected with the base stage of triode VT8 after resistance R24, positive pole is then as the electric capacity C11 be somebody's turn to do from the input end of gain control circuit, N pole is connected with the emitter of triode VT8 after resistance R26, P pole is then in turn through diode D4 that resistance R25 is connected with the collector of triode VT8 after resistance R23 and resistance R27, the electric capacity C13 be in parallel with diode D4, N pole is connected with the base stage of triode VT9, the diode D5 that P pole is then connected with the collector of triode VT8 after electric capacity C12, positive pole is connected with the N pole of unidirectional thyristor D6, the electric capacity C14 that negative pole is then connected with the emitter of triode VT9, one end is connected with the collector of triode VT9, the inductance L 1 that the other end is then connected with the N pole of diode D4, and one end is connected with the control pole of unidirectional thyristor D6, the other end is then as forming from the resistance R28 of the output terminal of gain control circuit, the negative pole of described electric capacity C11 is also connected with the tie point of resistance R25 with resistance R23, the N pole of described unidirectional thyristor D6 is connected with the tie point of resistance R27 with resistance R23, its P pole is then connected with the N pole of diode D4.
Described bias amplifier is by field effect transistor Q2, triode VT6, triode VT7, N pole is connected with the grid of field effect transistor Q2, the diode D2 that P pole is then connected with the emitter of triode VT6 after resistance R19, N pole is connected with the base stage of triode VT6, the voltage stabilizing diode D3 of ground connection while P pole is then connected with the P pole of diode D2, one end is connected with the base stage of triode VT6, the resistance R20 of other end ground connection, one end is connected with the drain electrode of field effect transistor Q2, the resistance R18 of ground connection while the other end is then connected with the base stage of triode VT6 after resistance R22, positive pole is connected with the emitter of triode VT7, the electric capacity C10 that negative pole is then connected with the base stage of triode VT6, and one end is connected with the collector of triode VT7, the resistance R21 that the other end is then connected with the negative pole of electric capacity C10 forms, the grid of described field effect transistor Q2 is then connected with the collector of triode VT6 as the input end of this bias amplifier, its source electrode, the base stage of described triode VT7 is then connected with the tie point of resistance R22 with resistance R18, the base stage of described triode VT6 is then as the output terminal of this bias amplifier.
Described torque signal processing module by input circuit, the logic control circuit be connected with input circuit, the transistor drive circuit that andlogic control circuit is connected, and the simultaneously testing circuit composition that is connected with transistor drive circuit of andlogic control circuit.
Described input circuit is by triode VT1, triode VT2, one end is connected with the emitter of triode VT1, the other end then in turn through the resistance R2 that resistance R3 is connected with the emitter of triode VT2 after resistance R4, and one end is connected with the collector of triode VT1, the other end resistance R1 that then andlogic control circuit is connected forms; The base stage of described triode VT1 is then connected with the base stage of triode VT2 as the input end of this input circuit, its collector; The collector andlogic control circuit of described triode VT2 is connected.
Described logic control circuit is by Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, field effect transistor Q1, one end is connected with the grid of field effect transistor Q1, the resistance R5 that the other end is then connected with the collector of triode VT1 after resistance R1, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C2 that negative pole is then connected with testing circuit, positive pole is connected with the drain electrode of field effect transistor Q1, the electric capacity C1 that negative pole is then connected with the output terminal of Sheffer stroke gate IC1 after resistance R7, and one end is connected with the drain electrode of field effect transistor Q1, the resistance R6 that the other end is then connected with the positive pole of Sheffer stroke gate IC3 forms, the negative pole of described Sheffer stroke gate IC2 is connected with the collector of triode VT2, its positive pole is then connected with the output terminal of Sheffer stroke gate IC1, the negative pole of described Sheffer stroke gate IC1 is connected with the negative pole of Sheffer stroke gate IC2, its positive pole is then connected with the source electrode of field effect transistor Q1, its output terminal is then connected with the negative pole of Sheffer stroke gate IC3, the output terminal of described Sheffer stroke gate IC3 is connected with the negative pole of electric capacity C1 and transistor drive circuit respectively.
Described transistor drive circuit is by triode VT3, triode VT4, triode VT5, one end is connected with the collector of triode VT3, the resistance R13 of other end ground connection, one end is connected with the base stage of triode VT3, the resistance R14 that the other end is then connected with the emitter of triode VT3, one end is connected with the base stage of triode VT3, the resistance R15 that the other end is then connected with the emitter of triode VT4, the electric capacity C8 be in parallel with resistance R15, one end is connected with the collector of triode VT4, the resistance R16 that the other end is then connected with the collector of triode VT5, be serially connected in the resistance R17 between the emitter of triode VT5 and base stage, and positive pole is connected with the emitter of triode VT5, the electric capacity C9 that negative pole is then connected with testing circuit forms, the emitter of described triode VT3 is connected with the output terminal of Sheffer stroke gate IC3 and testing circuit respectively, ground connection while the emitter of described triode VT4 is connected with the emitter of triode VT3, its collector are then connected with the base stage of triode VT5, its base stage is then connected with the collector of triode VT5.
Described testing circuit is by detection chip U, amplifier P1, N pole is connected with the RLIM pin of detection chip U, P pole is the diode D1 of ground connection after electric capacity C3 then, one end is connected with the P pole of diode D1, the resistance R8 of ground connection while the other end is then connected with the LBO pin of detection chip U after resistance R9, positive pole is connected with the PGND pin of detection chip U, the electric capacity C4 of minus earth, positive pole is connected with the GND pin of detection chip U, the electric capacity C5 of minus earth, one end is connected with the negative pole of electric capacity C5, the resistance R12 that the other end is then connected with the positive pole of amplifier P1, positive pole is connected with the positive pole of amplifier P1, the electric capacity C6 of minus earth, be serially connected in the resistance R11 between the positive pole of amplifier P1 and output terminal, one end is connected with the LX pin of detection chip U, the resistance R10 that the other end is then connected with the positive pole of amplifier P1, and form with the electric capacity C7 that resistance R10 is in parallel, the VBAT pin of described detection chip U is connected with the emitter of triode VT3, its SHDN pin is then connected with the negative pole of electric capacity C2, its FB pin is then connected with the tie point of resistance R9 with resistance R8, its VOUT pin and LBI pin are connected with negative pole with the positive pole of amplifier P1 respectively, and its LX pin is then connected with the negative pole of electric capacity C9.
Described detection chip U is SP6648 integrated circuit.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) structure of the present invention is simple, and easy to operate, system cost is cheap.
(2) moment of torsion when the present invention can work to wheel box simultaneously, temperature, Vibration Condition are tested, and extrapolate its output power thus, and the combination property of wheel box is tested.
(3) the present invention can test the combination property of wheel box under different road conditions, to assess the combination property of wheel box.
(4) the present invention can carry out amplification process to torque signal, avoids the torque signal that collects when torque sensor too small and causes output torque test inaccurate.
(5) the present invention is by making torque signal more stable from the effect of gain control circuit, thus improves the precision of torsion-testing, facilitates tester to assess wheel box performance.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention;
Fig. 2 is torque signal processing module electrical block diagram of the present invention;
Fig. 3 is bias amplifier structural representation of the present invention;
Fig. 4 is of the present invention from gain control circuit structural representation.
Reference numeral name in above accompanying drawing is called:
1-wheel box, 2-driver module, 3-resistance system, 4-torque sensor, 5-temperature sensor, 6-vibration transducer, 7-single-chip microcomputer, 8-torque signal processing module, 9-bias amplifier, 10-from gain control circuit, 81-input circuit, 82-logic control circuit, 83-transistor drive circuit, 84-testing circuit.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment
As shown in Figure 1, the present invention is by wheel box 1, the driver module 2 be connected with wheel box 1, resistance system 3, vibration transducer 6, temperature sensor 5, torque sensor 4, the torque signal processing module 8 be connected with torque sensor 4, the bias amplifier 9 be connected with torque signal processing module 8, the single-chip microcomputer 7 be simultaneously connected with temperature sensor 5, vibration transducer 6, in order to reach object of the present invention, the present invention is also provided with from gain control circuit 10 between bias amplifier 9 and single-chip microcomputer 7.
Wherein, this driver module 2 is for providing driving power to wheel box.And resistance system 3 applies the second moment of torsion for giving wheel box 1, the direction of this second moment of torsion and driver module 2 to be supplied to the first torque direction of wheel box 1 contrary, namely the second moment of torsion and the first moment of torsion restrict mutually, then can simulate the resistance coefficient of wheel box 1 under different road conditions when the size of adjustment second moment of torsion.This torque sensor 4 is arranged on the clutch end of wheel box 1, for gathering the torque information of wheel box 1 under different road conditions.Temperature sensor 5 and vibration transducer 6 are then all arranged on the surface of wheel box 1, and this temperature sensor 5 is for gathering temperature signal when wheel box 1 works, and vibration transducer 6 is then for gathering vibration signal when wheel box 1 works.Torque signal processing module 8 and bias amplifier 9 process for the torque signal exported wheel box 1.The stability of torque signal then can be improved from gain control circuit 10.Torque signal, temperature signal, vibration signal all flow to single-chip microcomputer 7, carry out Macro or mass analysis, and can extrapolate the parameters such as the power of wheel box 1 thus by single-chip microcomputer 7.
In order to reach better effect, the JN338-AF type flange form torque rotary speed sensor that this torque sensor 4 preferentially adopts Beijing Sanjing Chuangye Technology Group Co.ltd to produce, this model torque sensor takes up room little when installing, torque measurement precision is high, rotating speed is applied widely, dynamic, the torque of static measurement connecting portion rotation axis, rotating speed, shaft power.Temperature sensor 5 is then preferably the JCJ100TW type temperature sensor that Beijing nine skill Development Co., Ltd of pure Rehabilitation produces, the features such as it has compact, is quick on the draw, waterproof antidetonation.The A308 type wireless vibration sensor that vibration transducer 6 preferentially adopts Beijing Bi Chuan Science and Technology Co., Ltd. to produce, its noise adopting wireless digital signal transmission mode to eliminate long cable transmission to bring, whole measuring system has high measuring accuracy and antijamming capability.Driver module 2, resistance system 3 and single-chip microcomputer 7 then adopt prior art to realize.
As shown in Figure 2, this torque signal processing module 8 is by input circuit 81, the logic control circuit 82 be connected with input circuit 81, the transistor drive circuit 83 that andlogic control circuit 82 is connected, and the testing circuit 84 that andlogic control circuit 82 is connected with transistor drive circuit 83 simultaneously forms.
Input circuit 81 is wherein by triode VT1, triode VT2, one end is connected with the emitter of triode VT1, the other end then in turn through the resistance R2 that resistance R3 is connected with the emitter of triode VT2 after resistance R4, and one end is connected with the collector of triode VT1, the other end resistance R1 that then andlogic control circuit 82 is connected forms.The base stage of described triode VT1 is then connected with the base stage of triode VT2 as the input end of this input circuit 81, its collector.The collector andlogic control circuit 82 of described triode VT2 is connected.
Described logic control circuit 82 is by Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, field effect transistor Q1, one end is connected with the grid of field effect transistor Q1, the resistance R5 that the other end is then connected with the collector of triode VT1 after resistance R1, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C2 that negative pole is then connected with testing circuit 84, positive pole is connected with the drain electrode of field effect transistor Q1, the electric capacity C1 that negative pole is then connected with the output terminal of Sheffer stroke gate IC1 after resistance R7, and one end is connected with the drain electrode of field effect transistor Q1, the resistance R6 that the other end is then connected with the positive pole of Sheffer stroke gate IC3 forms.The negative pole of described Sheffer stroke gate IC2 is connected with the collector of triode VT2, its positive pole is then connected with the output terminal of Sheffer stroke gate IC1.The negative pole of described Sheffer stroke gate IC1 is connected with the negative pole of Sheffer stroke gate IC2, its positive pole is then connected with the source electrode of field effect transistor Q1, its output terminal is then connected with the negative pole of Sheffer stroke gate IC3.The output terminal of described Sheffer stroke gate IC3 is connected with the negative pole of electric capacity C1 and transistor drive circuit 83 respectively.
Described transistor drive circuit 83 is by triode VT3, triode VT4, triode VT5, one end is connected with the collector of triode VT3, the resistance R13 of other end ground connection, one end is connected with the base stage of triode VT3, the resistance R14 that the other end is then connected with the emitter of triode VT3, one end is connected with the base stage of triode VT3, the resistance R15 that the other end is then connected with the emitter of triode VT4, the electric capacity C8 be in parallel with resistance R15, one end is connected with the collector of triode VT4, the resistance R16 that the other end is then connected with the collector of triode VT5, be serially connected in the resistance R17 between the emitter of triode VT5 and base stage, and positive pole is connected with the emitter of triode VT5, the electric capacity C9 that negative pole is then connected with testing circuit 84 forms.The emitter of described triode VT3 is connected with the output terminal of Sheffer stroke gate IC3 and testing circuit 84 respectively.Ground connection while the emitter of described triode VT4 is connected with the emitter of triode VT3, its collector are then connected with the base stage of triode VT5, its base stage is then connected with the collector of triode VT5.
Described testing circuit 84 is by detection chip U, amplifier P1, N pole is connected with the RLIM pin of detection chip U, P pole is the diode D1 of ground connection after electric capacity C3 then, one end is connected with the P pole of diode D1, the resistance R8 of ground connection while the other end is then connected with the LBO pin of detection chip U after resistance R9, positive pole is connected with the PGND pin of detection chip U, the electric capacity C4 of minus earth, positive pole is connected with the GND pin of detection chip U, the electric capacity C5 of minus earth, one end is connected with the negative pole of electric capacity C5, the resistance R12 that the other end is then connected with the positive pole of amplifier P1, positive pole is connected with the positive pole of amplifier P1, the electric capacity C6 of minus earth, be serially connected in the resistance R11 between the positive pole of amplifier P1 and output terminal, one end is connected with the LX pin of detection chip U, the resistance R10 that the other end is then connected with the positive pole of amplifier P1, and form with the electric capacity C7 that resistance R10 is in parallel, the VBAT pin of described detection chip U is connected with the emitter of triode VT3, its SHDN pin is then connected with the negative pole of electric capacity C2, its FB pin is then connected with the tie point of resistance R9 with resistance R8, its VOUT pin and LBI pin are connected with negative pole with the positive pole of amplifier P1 respectively, and its LX pin is then connected with the negative pole of electric capacity C9.In order to reach better implementation result, described detection chip U preferentially adopts SP6648 integrated circuit to realize.
As shown in Figure 3, bias amplifier 9 by field effect transistor Q2, triode VT6, triode VT7, electric capacity C10, diode D2, voltage stabilizing diode D3, resistance R18, resistance R19, resistance R20, resistance R21, resistance R22.During connection, the N pole of this diode D2 is connected with the grid of field effect transistor Q2, its P pole is then connected with the emitter of triode VT6 after resistance R19, the N pole of voltage stabilizing diode D3 is connected with the base stage of triode VT6, ground connection while its P pole is then connected with the P pole of diode D2, one end of resistance R20 is connected with the base stage of triode VT6, its other end ground connection, one end of resistance R18 is connected with the drain electrode of field effect transistor Q2, ground connection while its other end is then connected with the base stage of triode VT6 after resistance R22, the positive pole of electric capacity C10 is connected with the emitter of triode VT7, its negative pole is then connected with the base stage of triode VT6, one end of resistance R21 is connected with the collector of triode VT7, its other end is then connected with the negative pole of electric capacity C10.The grid of described field effect transistor Q2 is then connected with the collector of triode VT6 as the input end of this bias amplifier 9, its source electrode.The base stage of described triode VT7 is then connected with the tie point of resistance R22 with resistance R18.The base stage of described triode VT6 is then as the output terminal of this bias amplifier 9.In order to reach better implementation result, this field effect transistor Q2 preferentially adopts MPF102 transistor npn npn to realize.
Described is emphasis of the present invention from gain control circuit 10, and as shown in Figure 4, it is by triode VT8, triode VT9, unidirectional thyristor D6, electric capacity C11, electric capacity C12, electric capacity C13, electric capacity C14, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, inductance L 1, diode D4 and diode D5 forms, during connection, the negative pole of electric capacity C11 is connected with the base stage of triode VT8 after resistance R24, positive pole is then as the input end be somebody's turn to do from gain control circuit 10, the N pole of diode D4 is connected with the emitter of triode VT8 after resistance R26, P pole is then connected with the collector of triode VT8 after resistance R23 and resistance R27 through resistance R25 in turn, electric capacity C13 is then in parallel with diode D4, the N pole of diode D5 is connected with the base stage of triode VT9, its P pole is then connected with the collector of triode VT8 after electric capacity C12, the positive pole of electric capacity C14 is connected with the N pole of unidirectional thyristor D6, its negative pole is then connected with the emitter of triode VT9, one end of inductance L 1 is connected with the collector of triode VT9, its other end is then connected with the N pole of diode D4, one end of resistance R28 is connected with the control pole of unidirectional thyristor D6, its other end is then as the output terminal be somebody's turn to do from gain control circuit 10.The negative pole of described electric capacity C11 is also connected with the tie point of resistance R25 with resistance R23.The N pole of described unidirectional thyristor D6 is connected with the tie point of resistance R27 with resistance R23, its P pole is then connected with the N pole of diode D4.
As mentioned above, just well the present invention can be realized.
Claims (8)
1. one kind is biased amplifying type wheel box test macro based on the signal controlled from gain, by wheel box (1), the driver module (2) be connected with wheel box (1), resistance system (3), vibration transducer (6), temperature sensor (5), torque sensor (4), the torque signal processing module (8) be connected with torque sensor (4), the bias amplifier (9) be connected with torque signal processing module (8), and the single-chip microcomputer (7) be simultaneously connected with temperature sensor (5), vibration transducer (6) forms, it is characterized in that: be also provided with from gain control circuit (10) between bias amplifier (9) and single-chip microcomputer (7), described from gain control circuit (10) by triode VT8, triode VT9, unidirectional thyristor D6, negative pole is connected with the base stage of triode VT8 after resistance R24, positive pole is then as the electric capacity C11 be somebody's turn to do from the input end of gain control circuit (10), N pole is connected with the emitter of triode VT8 after resistance R26, P pole is then in turn through diode D4 that resistance R25 is connected with the collector of triode VT8 after resistance R23 and resistance R27, the electric capacity C13 be in parallel with diode D4, N pole is connected with the base stage of triode VT9, the diode D5 that P pole is then connected with the collector of triode VT8 after electric capacity C12, positive pole is connected with the N pole of unidirectional thyristor D6, the electric capacity C14 that negative pole is then connected with the emitter of triode VT9, one end is connected with the collector of triode VT9, the inductance L 1 that the other end is then connected with the N pole of diode D4, and one end is connected with the control pole of unidirectional thyristor D6, the other end is then as forming from the resistance R28 of the output terminal of gain control circuit (10), the negative pole of described electric capacity C11 is also connected with the tie point of resistance R25 with resistance R23, the N pole of described unidirectional thyristor D6 is connected with the tie point of resistance R27 with resistance R23, its P pole is then connected with the N pole of diode D4.
2. a kind of signal based on controlling from gain according to claim 1 is biased amplifying type wheel box test macro, it is characterized in that: described bias amplifier (9) is by field effect transistor Q2, triode VT6, triode VT7, N pole is connected with the grid of field effect transistor Q2, the diode D2 that P pole is then connected with the emitter of triode VT6 after resistance R19, N pole is connected with the base stage of triode VT6, the voltage stabilizing diode D3 of ground connection while P pole is then connected with the P pole of diode D2, one end is connected with the base stage of triode VT6, the resistance R20 of other end ground connection, one end is connected with the drain electrode of field effect transistor Q2, the resistance R18 of ground connection while the other end is then connected with the base stage of triode VT6 after resistance R22, positive pole is connected with the emitter of triode VT7, the electric capacity C10 that negative pole is then connected with the base stage of triode VT6, and one end is connected with the collector of triode VT7, the resistance R21 that the other end is then connected with the negative pole of electric capacity C10 forms, the grid of described field effect transistor Q2 is then connected with the collector of triode VT6 as the input end of this bias amplifier (9), its source electrode, the base stage of described triode VT7 is then connected with the tie point of resistance R22 with resistance R18, the base stage of described triode VT6 is then as the output terminal of this bias amplifier (9).
3. a kind of signal based on controlling from gain according to claim 2 is biased amplifying type wheel box test macro, it is characterized in that: described torque signal processing module (8) is by input circuit (81), the logic control circuit (82) be connected with input circuit (81), the transistor drive circuit (83) that andlogic control circuit (82) is connected, and the testing circuit (84) that andlogic control circuit (82) is connected with transistor drive circuit (83) simultaneously forms.
4. a kind of signal based on controlling from gain according to claim 3 is biased amplifying type wheel box test macro, it is characterized in that: described input circuit (81) is by triode VT1, triode VT2, one end is connected with the emitter of triode VT1, the other end then in turn through the resistance R2 that resistance R3 is connected with the emitter of triode VT2 after resistance R4, and one end is connected with the collector of triode VT1, the other end resistance R1 that then andlogic control circuit (82) is connected forms; The base stage of described triode VT1 is then connected with the base stage of triode VT2 as the input end of this input circuit (81), its collector; The collector andlogic control circuit (82) of described triode VT2 is connected.
5. a kind of signal based on controlling from gain according to claim 4 is biased amplifying type wheel box test macro, it is characterized in that: described logic control circuit (82) is by Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, field effect transistor Q1, one end is connected with the grid of field effect transistor Q1, the resistance R5 that the other end is then connected with the collector of triode VT1 after resistance R1, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C2 that negative pole is then connected with testing circuit (84), positive pole is connected with the drain electrode of field effect transistor Q1, the electric capacity C1 that negative pole is then connected with the output terminal of Sheffer stroke gate IC1 after resistance R7, and one end is connected with the drain electrode of field effect transistor Q1, the resistance R6 that the other end is then connected with the positive pole of Sheffer stroke gate IC3 forms, the negative pole of described Sheffer stroke gate IC2 is connected with the collector of triode VT2, its positive pole is then connected with the output terminal of Sheffer stroke gate IC1, the negative pole of described Sheffer stroke gate IC1 is connected with the negative pole of Sheffer stroke gate IC2, its positive pole is then connected with the source electrode of field effect transistor Q1, its output terminal is then connected with the negative pole of Sheffer stroke gate IC3, the output terminal of described Sheffer stroke gate IC3 is connected with the negative pole of electric capacity C1 and transistor drive circuit (83) respectively.
6. a kind of signal based on controlling from gain according to claim 5 is biased amplifying type wheel box test macro, it is characterized in that: described transistor drive circuit (83) is by triode VT3, triode VT4, triode VT5, one end is connected with the collector of triode VT3, the resistance R13 of other end ground connection, one end is connected with the base stage of triode VT3, the resistance R14 that the other end is then connected with the emitter of triode VT3, one end is connected with the base stage of triode VT3, the resistance R15 that the other end is then connected with the emitter of triode VT4, the electric capacity C8 be in parallel with resistance R15, one end is connected with the collector of triode VT4, the resistance R16 that the other end is then connected with the collector of triode VT5, be serially connected in the resistance R17 between the emitter of triode VT5 and base stage, and positive pole is connected with the emitter of triode VT5, the electric capacity C9 that negative pole is then connected with testing circuit (84) forms, the emitter of described triode VT3 is connected with the output terminal of Sheffer stroke gate IC3 and testing circuit (84) respectively, ground connection while the emitter of described triode VT4 is connected with the emitter of triode VT3, its collector are then connected with the base stage of triode VT5, its base stage is then connected with the collector of triode VT5.
7. a kind of signal based on controlling from gain according to claim 6 is biased amplifying type wheel box test macro, it is characterized in that: described testing circuit (84) is by detection chip U, amplifier P1, N pole is connected with the RLIM pin of detection chip U, P pole is the diode D1 of ground connection after electric capacity C3 then, one end is connected with the P pole of diode D1, the resistance R8 of ground connection while the other end is then connected with the LBO pin of detection chip U after resistance R9, positive pole is connected with the PGND pin of detection chip U, the electric capacity C4 of minus earth, positive pole is connected with the GND pin of detection chip U, the electric capacity C5 of minus earth, one end is connected with the negative pole of electric capacity C5, the resistance R12 that the other end is then connected with the positive pole of amplifier P1, positive pole is connected with the positive pole of amplifier P1, the electric capacity C6 of minus earth, be serially connected in the resistance R11 between the positive pole of amplifier P1 and output terminal, one end is connected with the LX pin of detection chip U, the resistance R10 that the other end is then connected with the positive pole of amplifier P1, and form with the electric capacity C7 that resistance R10 is in parallel, the VBAT pin of described detection chip U is connected with the emitter of triode VT3, its SHDN pin is then connected with the negative pole of electric capacity C2, its FB pin is then connected with the tie point of resistance R9 with resistance R8, its VOUT pin and LBI pin are connected with negative pole with the positive pole of amplifier P1 respectively, and its LX pin is then connected with the negative pole of electric capacity C9.
8. a kind of signal based on controlling from gain according to claim 7 is biased amplifying type wheel box test macro, it is characterized in that: described detection chip U is SP6648 integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510250584.2A CN104833508A (en) | 2015-05-17 | 2015-05-17 | Signal bias amplification type gearbox test system based on self-gain control |
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| CN105346446A (en) * | 2015-12-11 | 2016-02-24 | 成都翰兴科技有限公司 | Signal self-enhancement type underground parking lot reversing aid system |
| CN105445742A (en) * | 2015-12-11 | 2016-03-30 | 成都翰兴科技有限公司 | Underground parking lot parking auxiliary system based on gain control circuit |
| CN105487079A (en) * | 2015-12-11 | 2016-04-13 | 成都翰兴科技有限公司 | Gain flash-lamp type underground parking lot backing auxiliary system |
| CN105522964A (en) * | 2015-12-11 | 2016-04-27 | 成都翰兴科技有限公司 | High-sensitivity gain type flashing reversing aid system for underground parking garage |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105346446A (en) * | 2015-12-11 | 2016-02-24 | 成都翰兴科技有限公司 | Signal self-enhancement type underground parking lot reversing aid system |
| CN105445742A (en) * | 2015-12-11 | 2016-03-30 | 成都翰兴科技有限公司 | Underground parking lot parking auxiliary system based on gain control circuit |
| CN105487079A (en) * | 2015-12-11 | 2016-04-13 | 成都翰兴科技有限公司 | Gain flash-lamp type underground parking lot backing auxiliary system |
| CN105522964A (en) * | 2015-12-11 | 2016-04-27 | 成都翰兴科技有限公司 | High-sensitivity gain type flashing reversing aid system for underground parking garage |
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Application publication date: 20150812 |