CN104831512B - Temperature control method and temperature control device - Google Patents
Temperature control method and temperature control device Download PDFInfo
- Publication number
- CN104831512B CN104831512B CN201510171380.XA CN201510171380A CN104831512B CN 104831512 B CN104831512 B CN 104831512B CN 201510171380 A CN201510171380 A CN 201510171380A CN 104831512 B CN104831512 B CN 104831512B
- Authority
- CN
- China
- Prior art keywords
- temperature
- circuit
- silicon controlled
- ratio
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06F—LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
- D06F75/00—Hand irons
- D06F75/08—Hand irons internally heated by electricity
- D06F75/26—Temperature control or indicating arrangements
Abstract
A temperature control device comprises a printed circuit board, a power supply element electrically connected with the printed circuit board, at least one temperature sensing element, and at least one temperature control element, wherein the output end of the temperature sensing element is connected with the enabled end of the printed circuit board; the temperature control element comprises an electric heating tube and a thyristor for controlling the heating power of the electric heating tube; and the enabled end of the thyristor is connected with the output end of the printed circuit board. The invention also discloses the temperature control device working by adopting the above method. According to the temperature control method and the temperature control device, the structure is simple, practicability is strong, accurate temperature control can be realized by arranging the thyristor and using the conduction ratio; and as the actural temperature of the bottom plate in an electric iron at any time is continuous, the conduction ratio changes of the thyristor are also continuous and not sudden, the temperature changes of the bottom plate of the electric iron are small, and automatic constant temperature can be ensured.
Description
Technical field
The present invention relates to domain of control temperature, refers in particular to a kind of temperature-controlled process and temperature control equipment.
Background technology
Temperature control equipment is a kind of common Electronic Control components and parts.For now, existing temperature control equipment
Mainly it is made up of temperature controller and thermocouple, thermocouple detection temperature is simultaneously converted into the signal of telecommunication and passes to temperature controller, and temperature controller is according to institute
The temperature of setting sends control signal, and temperature stops heating system higher than the design temperature upper limit or opens cooling system, less than setting
Constant temperature degree is offline to be stopped cooling system or opens heating system.
Existing electric iron generally includes a base plate and its temperature control equipment, and temperature control equipment carries out adding to base plate
Heat, base plate is to being carried out flatiron shaping by Ironing thing.Also, in order to reach more preferable ironing effect, electric iron also has mostly at present
There is steam function.Water tank is provided with flatiron, forms a vaporium above base plate, formed and communicate with the vaporium on base plate
Steam fumarole, water in water tank instilled in steam room, and vaporization after being heated forms steam, sprays from the steam fumarole of bottom base plate
Which is humidified to medicated clothing.
In electric iron, can base plate keep constant temperature and how keep constant temperature to be the key factor for weighing electric iron quality.
The temperature control mode of electric iron is mainly by the way of set point on-off control at present.Its specifically after electric iron is started shooting,
100% power is heated, and only after the actual sole plate temperature for detecting is equal to design temperature, can just stop heating；Due to temperature
The hysteresis quality of degree, when adding stopping, temperature is very high, is flushed to and is much higher than design temperature, cause flatiron in actual temperature also meeting
Base plate temperature is larger.
The content of the invention
The present invention provides a kind of temperature-controlled process and temperature control equipment, and its main purpose is to overcome existing temperature control
The defect that control accuracy is low, temperature difference amplitude is larger that method processed and temperature control equipment are present.
For solving above-mentioned technical problem, the present invention is adopted the following technical scheme that：
A kind of temperature-controlled process, comprises the following steps：A, the design temperature for presetting the target object for needing control
T0, when target object is first by low-temperature heat to design temperature T0, in circuit, silicon controlled conducting ratio is 100%, works as target
The Current Temperatures of target object when the Current Temperatures of object are close to T0, are detected at the very first time, obtain the first detection temperature T1；
B, difference DELTA T1 for calculating T0-T1；The Current Temperatures of target object are detected when c, the second time after the first time, are obtained
Second detection temperature T2；D, difference DELTA T2 for calculating T0-T2；E, compare Δ T1 and Δ T2 numerical value, when Δ T1 is more than Δ T2, subtract
Silicon controlled conducting ratio in little circuit, when Δ T1 is less than Δ T2, silicon controlled conducting ratio in increasing circuit.
Further, as Δ T1 and/or Δ T2<When 0, in circuit, silicon controlled conducting ratio is 0.
Further, as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is more than 0 and is less than 100%.
Further, before T1 and/or T2 is less than one first trough temperature Tmin1, silicon controlled conduction ratio in circuit
Example is 100%；T1 and/or T2 more than after one first trough temperature Tmin1 and less than before primary peak temperature Tmux1,
In circuit, silicon controlled conducting ratio is continuously reduced to 0% by 100%, and the design temperature T0 is located at the first trough temperature Tmin1
And primary peak temperature Tmux1 between.
Further, after T1 and/or T2 is less than primary peak temperature Tmux1 and more than a design temperature T0
Before, in circuit, silicon controlled conducting ratio is 0；When T1 and/or T2 is less than after the design temperature T0 and more than 1 the
Before two trough temperature Tmin1, in circuit is met, silicon controlled conducting ratio is gradually gone up by 0.
A kind of temperature control equipment, it include a printed circuit board (PCB), a power supply component electrically connected with the printed circuit board (PCB),
An at least temperature-sensing element and at least a temperature control component, the outfan of the temperature-sensing element are connected to described
The Enable Pin of printed circuit board (PCB), the temperature control component include that an electrothermal tube and is used for controlling the electrothermal tube heating power
The controllable silicon of size, the silicon controlled Enable Pin are connected to the outfan of the printed circuit board (PCB).
Further, the design temperature of the target object for needing control during use, is preset in the printed circuit board (PCB)
T0, when target object is first by low-temperature heat to design temperature T0, in circuit, silicon controlled conducting ratio is 100%, works as target
When the Current Temperatures of object are close to T0, the temperature-sensing element detects the Current Temperatures of target object at the very first time, obtains
Take the first detection temperature T1；The printed circuit board (PCB) carries out difference DELTA T1 that A/D is changed and calculated T0-T1；The temperature sensing
The Current Temperatures of target object are detected during element the second time after the first time, obtain the second detection temperature T2；It is described
Printed circuit board (PCB) carries out difference DELTA T2 that A/D is changed and calculated T0-T2；The printed circuit board (PCB) compares Δ T1 and Δ T2 numerical value,
When Δ T1 is more than Δ T2, reduces silicon controlled conducting ratio in circuit, reduce the heating power of the electrothermal tube；When Δ T1 it is little
When Δ T2, in increasing circuit, silicon controlled conducting ratio, increases the heating power of the electrothermal tube.
Further, as Δ T1 and/or Δ T2<When 0, in circuit, silicon controlled conducting ratio is 0, as Δ T1 and/or Δ T2
When=0, in circuit, silicon controlled conducting ratio is more than 0 and is less than 100%.
Further, before T1 and/or T2 is less than one first trough temperature Tmin1, silicon controlled conduction ratio in circuit
Example is 100%；T1 and/or T2 more than after one first trough temperature Tmin1 and less than before primary peak temperature Tmux1,
In circuit, silicon controlled conducting ratio is continuously reduced to 0% by 100%, and the design temperature T0 is located at the first trough temperature Tmin1
And primary peak temperature Tmux1 between.
Further, after T1 and/or T2 is less than primary peak temperature Tmux1 and more than a design temperature T0
Before, in circuit, silicon controlled conducting ratio is 0；When T1 and/or T2 is less than after the design temperature T0 and more than 1 the
Before two trough temperature Tmin1, in circuit is met, silicon controlled conducting ratio is gradually gone up by 0.
Compared to the prior art, the beneficial effect of present invention generation is:
Present configuration is simple, practical, realizes accurate temperature by setting controllable silicon and using its conducting ratio
Degree control, as at any period, in electric iron, actual sole plate temperature is continuous；The change of silicon controlled conduction ratio is also continuous
, rather than be mutated, thus silicon controlled conduction ratio can followed by the change of Δ T1 in real time and automatically continuously adjust, therefore
Δ T1 differences can be with constant in the range of the warm width of very little, so that the temperature change very little of iron plate, it is ensured that automatically
Constant temperature.
Description of the drawings
Structural representations of the Fig. 1 for one electric iron of embodiment.
Fig. 2 is the schematic block circuit diagram of attemperating unit described in embodiment one.
When Fig. 3 is in the Regulation of Constant Temperature of the base plate m- baseplate temp graph of a relation and when m- electrothermal tube power relation
Figure.
Fig. 4 is the schematic block circuit diagram of attemperating unit described in embodiment two.
Specific embodiment
The specific embodiment of the present invention is illustrated with reference to the accompanying drawings.
Embodiment one
See figures.1.and.2.A kind of electric iron of temperature control mode improvement, including electric iron body 1, is arranged on the electric iron
The base plate 2 of 1 bottom of body and an attemperating unit 3, be equiped with above the base plate 2 one for heat to which temperature control unit
Part 30, the attemperating unit 3 include the power supply component 32 that a printed circuit board (PCB) 31, electrically connected with the printed circuit board (PCB) 31, at least
One temperature-sensing element 33, and temperature control component 30 at least described in, the outfan connection of the temperature-sensing element 33
In the Enable Pin of the printed circuit board (PCB) 31, the temperature control component 30 includes that an electrothermal tube 301 and is used for controlling this
The controllable silicon 302 of 301 heating power size of electrothermal tube, the Enable Pin of the controllable silicon 302 are connected to the printed circuit board (PCB) 31
Outfan.In the present embodiment, the temperature-sensing element 33 is critesistor.
The Regulation of Constant Temperature of the base plate 2 is mainly included the following steps that：Before start or when starting shooting, the printed circuit
The design temperature T0 of the base plate 2 for needing control is preset in plate 31, when base plate 2 is first by low-temperature heat to design temperature T0
When, in circuit, the conducting ratio of controllable silicon 302 is 100%, when the Current Temperatures of base plate 2 are close to T0, the temperature-sensing element
33 Current Temperatures for detecting base plate 2 at the very first time, obtain the first detection temperature T1；The printed circuit board (PCB) 31 carries out A/D
Change and calculate difference DELTA T1 of T0-T1；The temperature-sensing element 33 detects bottom during the second time after the first time
The Current Temperatures of plate 2, obtain the second detection temperature T2；The printed circuit board (PCB) 31 carries out the difference that A/D is changed and calculated T0-T2
ΔT2；The printed circuit board (PCB) 31 compares Δ T1 and Δ T2 numerical value, when Δ T1 is more than Δ T2, reduces controllable silicon 302 in circuit
Conducting ratio, reduce the heating power of the electrothermal tube 301；When Δ T1 is less than Δ T2, controllable silicon 302 in increasing circuit
Conducting ratio, increases the heating power of the electrothermal tube 301.
Design temperature T0 is accurately maintained in order to ensure the base plate 2 afterwards, must then is fulfilled for the following aspects：
1st, as Δ T1 and/or Δ T2<When 0, in circuit, silicon controlled conducting ratio is 0.
2nd, as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio can be constant in some little fixation
Value.
3rd, T1 and/or T2 more than after one first trough temperature Tmin1 and less than primary peak temperature Tmux1 it
Before, in circuit, silicon controlled conducting ratio is continuously reduced to 0% by 100%, and the design temperature T0 is located at the first trough temperature
Between Tmin1 and primary peak temperature Tmux1.
4th, before T1 and/or T2 is less than after primary peak temperature Tmux1 and more than a design temperature T0, electricity
In road, silicon controlled conducting ratio is 0.
5th, before T1 and/or T2 is less than after the design temperature T0 and more than one second trough temperature Tmin1,
In meeting circuit, silicon controlled conducting ratio is gradually gone up by 0.
After above-mentioned condition is met, 31 actual temperatures for detecting of printed circuit board (PCB), quantization are converted to digital quantity, and set
Constant temperature degree T0 compares, and calculates T0-T1 differences, controls the heat time heating time in unit period, constantly to adjust heating power.
When Fig. 3 is in the Regulation of Constant Temperature of the base plate 2 m- baseplate temp graph of a relation and when m- electrothermal tube power close
System's figure.With reference to Fig. 3.Sum it up, the Regulation of Constant Temperature of the above base plate 2 was included with the next stage
The 0-t1 stages：2 initial temperature T of base plate is very low, and T0-T differences are very big；Circuit automatically controls controllable silicon 100% and turns on,
100% power is exported, quickly to heat；
The t1-t2 stages：2 temperature T of base plate is higher, and T0-T differences have become less and less, and final ＜ 0；Electricity
Road automatically controls controlled silicon conducting ratio and starts less and less, and power output is continuously reduced to 0% from 100%；
The t2-t3 stages：2 temperature T of base plate gradually falls after rise, and T0-T differences gradually go back up to from ＜ 0 and hover near 0；Circuit
Automatically control controlled silicon conducting ratio to be gradually increased, power gradually gos up from 0%；
Stage after t4：2 temperature T of base plate is stable near default T0, the stable very low range near 0 of T0-T differences
It is interior；It is constant in certain proportion, power of the power invariability in insulation that circuit automatically controls controlled silicon conducting.
At any period, 2 actual temperature of base plate is continuous；The change of power be also it is continuous, rather than be mutated, and
And followed by T0-T differences in real time and automatically continuously adjust, so T0-T differences can be with constant in the range of the warm width of very little.
Embodiment two
With reference to Fig. 4.Due to being provided with steam forming device and steam heater, the temperature in the electric iron of the present embodiment
Degree sensing element 33 is respectively arranged with three, and is connected on base plate 2, steam forming device and steam heater,
It is respectively used to sense 2 temperature of base plate, the temperature of water and vapor (steam) temperature.Temperature control component 30 is respectively arranged with three, and point
It is not connected on base plate 2, steam forming device and steam heater, is respectively used to control 2 temperature of base plate, the temperature of water and steaming
Stripping temperature.
Perseverance is carried out to base plate 2 as temperature control component 30 carries out the mode of heated at constant temperature and temperature control component 30 to water
The mode of temperature heating is identical, thus its detailed process is not described in detail herein.
Base plate 2 is carried out as temperature control component 30 carries out the mode of heated at constant temperature and temperature control component 30 to steam
The mode of heated at constant temperature is identical, thus its detailed process is not described in detail herein.
In addition, the temperature-controlled process and temperature control equipment of present disclosure are not limited in electric iron to base plate
2 temperature, the temperature of water and vapor (steam) temperature carry out thermostatic control, need to carry out in can be applied in other household electrical appliances thermostatically controlled
In occasion, such as apply blow in laundry press, water dispenser, baking oven, electric wind, disinfection cabinet, drying room, water heater, textile of chemical fibre heater
And other electric equipments.
The specific embodiment of the present invention is above are only, but the design concept of the present invention is not limited thereto, it is all to utilize this
Design carries out the change of unsubstantiality to the present invention, all should belong to the behavior for invading the scope of the present invention.
Claims (9)
1. a kind of temperature-controlled process, it is characterised in that comprise the following steps：A, preset the target object for needing control
Design temperature T0, when target object is first by low-temperature heat to design temperature T0, in circuit, silicon controlled conducting ratio is
100%, the Current Temperatures of target object when the Current Temperatures of target object are close to T0, are detected at the very first time, obtain first
Detection temperature T1；B, difference DELTA T1 for calculating T0-T1；Working as target object is detected when c, the second time after the first time
Front temperature, obtains the second detection temperature T2；D, difference DELTA T2 for calculating T0-T2；E, compare Δ T1 and Δ T2 numerical value, when Δ T1 it is big
When Δ T2, reduce silicon controlled conducting ratio in circuit, when Δ T1 is less than Δ T2, silicon controlled conduction ratio in increasing circuit
Example.
2. as claimed in claim 1 a kind of temperature-controlled process, it is characterised in that：As Δ T1 and/or Δ T2<Can in circuit when 0
The conducting ratio of control silicon is 0.
3. as claimed in claim 2 a kind of temperature-controlled process, it is characterised in that：Can in circuit as Δ T1 and/or Δ T2=0
The conducting ratio of control silicon is more than 0 and is less than 100%.
4. as claimed in claim 3 a kind of temperature-controlled process, it is characterised in that：When T1 and/or T2 is less than one first trough temperature
Before degree Tmin1, in circuit, silicon controlled conducting ratio is 100%；T1 and/or T2 is more than after one first trough temperature Tmin1
And less than before primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is continuously reduced to 0% by 100%, described
Design temperature T0 is located between the first trough temperature Tmin1 and primary peak temperature Tmux1.
5. as claimed in claim 4 a kind of temperature-controlled process, it is characterised in that：When T1 and/or T2 is less than the primary peak
After temperature Tmux1 and more than before a design temperature T0, in circuit, silicon controlled conducting ratio is 0；When T1 and/or T2 it is little
After the design temperature T0 and more than before one second trough temperature Tmin1, in circuit is met, silicon controlled is turned on
Ratio is gradually gone up by 0.
6. a kind of temperature control equipment, which includes a printed circuit board (PCB), a power supply component electrically connected with the printed circuit board (PCB), extremely
A few temperature-sensing element and an at least temperature control component, it is characterised in that：The outfan of the temperature-sensing element connects
The Enable Pin of the printed circuit board (PCB) is connected to, the temperature control component includes that an electrothermal tube and is used for controlling the electrothermal tube
The controllable silicon of heating power size, the silicon controlled Enable Pin are connected to the outfan of the printed circuit board (PCB), during use, institute
The design temperature T0 for presetting the target object for needing control in printed circuit board (PCB) is stated, when target object is first by low-temperature heat
During to design temperature T0, in circuit, silicon controlled conducting ratio is 100%, when the Current Temperatures of target object are close to T0, described
Temperature-sensing element detects the Current Temperatures of target object at the very first time, obtains the first detection temperature T1；The printing electricity
Road plate carries out difference DELTA T1 that A/D is changed and calculated T0-T1；The temperature-sensing element the second time after the first time
When detect target object Current Temperatures, obtain the second detection temperature T2；The printed circuit board (PCB) carries out A/D and changes and calculate
Difference DELTA T2 of T0-T2；The printed circuit board (PCB) compares Δ T1 and Δ T2 numerical value, when Δ T1 is more than Δ T2, reduces in circuit
Silicon controlled turns on ratio, reduces the heating power of the electrothermal tube；When Δ T1 is less than Δ T2, silicon controlled in increasing circuit
Conducting ratio, increases the heating power of the electrothermal tube.
7. as claimed in claim 6 a kind of temperature control equipment, it is characterised in that：As Δ T1 and/or Δ T2<Can in circuit when 0
The conducting ratio of control silicon is 0, and as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is more than 0 and is less than 100%.
8. as claimed in claim 7 a kind of temperature control equipment, it is characterised in that：When T1 and/or T2 is less than one first trough temperature
Before degree Tmin1, in circuit, silicon controlled conducting ratio is 100%；T1 and/or T2 is more than after one first trough temperature Tmin1
And less than before primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is continuously reduced to 0% by 100%, described
Design temperature T0 is located between the first trough temperature Tmin1 and primary peak temperature Tmux1.
9. as claimed in claim 8 a kind of temperature control equipment, it is characterised in that：When T1 and/or T2 is less than the primary peak
After temperature Tmux1 and more than before a design temperature T0, in circuit, silicon controlled conducting ratio is 0；When T1 and/or T2 it is little
After the design temperature T0 and more than before one second trough temperature Tmin1, in circuit is met, silicon controlled is turned on
Ratio is gradually gone up by 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171380.XA CN104831512B (en) | 2015-04-13 | 2015-04-13 | Temperature control method and temperature control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171380.XA CN104831512B (en) | 2015-04-13 | 2015-04-13 | Temperature control method and temperature control device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104831512A CN104831512A (en) | 2015-08-12 |
| CN104831512B true CN104831512B (en) | 2017-03-22 |
Family
ID=53809690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510171380.XA Active CN104831512B (en) | 2015-04-13 | 2015-04-13 | Temperature control method and temperature control device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104831512B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040387A (en) * | 2015-09-16 | 2015-11-11 | 中山市元亨家居用品有限公司 | Heat storage body of electric iron |
| CN111356511B (en) * | 2018-03-14 | 2022-03-11 | 株式会社岛津制作所 | Supercritical fluid separation device |
| CN109363528B (en) * | 2018-11-22 | 2021-05-04 | 厦门芯阳科技股份有限公司 | Control method of baking tray of smokeless machine and baking tray |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2068596A (en) * | 1980-01-24 | 1981-08-12 | Plessey Co Ltd | Parameter controller |
| EP0293853A1 (en) * | 1987-06-05 | 1988-12-07 | MEMMERT GMBH & CO KG, wärme-, medizin- und labortechnische Elektro-Geräte | Method for controlling the temperature, and a temperature control circuit |
| CN102389254A (en) * | 2011-09-02 | 2012-03-28 | 广东伊立浦电器股份有限公司 | Temperature control method of electric heating kitchenware |
| CN203908044U (en) * | 2014-05-09 | 2014-10-29 | 中山市广盛实业有限公司 | Flow control system of electric water heater |
| CN204530278U (en) * | 2015-04-13 | 2015-08-05 | 厦门优尔电器股份有限公司 | A kind of attemperating unit and use the electric iron of this attemperating unit |
-
2015
- 2015-04-13 CN CN201510171380.XA patent/CN104831512B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2068596A (en) * | 1980-01-24 | 1981-08-12 | Plessey Co Ltd | Parameter controller |
| EP0293853A1 (en) * | 1987-06-05 | 1988-12-07 | MEMMERT GMBH & CO KG, wärme-, medizin- und labortechnische Elektro-Geräte | Method for controlling the temperature, and a temperature control circuit |
| CN102389254A (en) * | 2011-09-02 | 2012-03-28 | 广东伊立浦电器股份有限公司 | Temperature control method of electric heating kitchenware |
| CN203908044U (en) * | 2014-05-09 | 2014-10-29 | 中山市广盛实业有限公司 | Flow control system of electric water heater |
| CN204530278U (en) * | 2015-04-13 | 2015-08-05 | 厦门优尔电器股份有限公司 | A kind of attemperating unit and use the electric iron of this attemperating unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104831512A (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104746323B (en) | A kind of electric iron of temperature control mode improvement and the temp. control method of this electric iron | |
| CN104831512B (en) | Temperature control method and temperature control device | |
| CN1138886C (en) | Steam iron with anticipating power control | |
| EP0390264A1 (en) | Steam iron | |
| CN105832120B (en) | The control method of cooking apparatus and cooking apparatus | |
| JPH09510904A (en) | Steam iron with dough temperature sensor to control steam generation | |
| US20190142206A1 (en) | Method for Adjusting the Heating Power of At Least One Heating Element of a Domestic Appliance | |
| CN106264066A (en) | The recognition methods of the culinary art type of electricity cooking pot and electricity cooking pot | |
| CN203807833U (en) | Steam electric iron device | |
| CN204530278U (en) | A kind of attemperating unit and use the electric iron of this attemperating unit | |
| CN106264711A (en) | A kind of radio frequency ablation device of multi-electrode output | |
| US10480826B2 (en) | System and method of controlling a mixing valve of a heating system | |
| CN107429474B (en) | Ironing appliance with means for controlling the heating power | |
| CN104120598A (en) | Steam electric iron | |
| CN205625600U (en) | Electric kettle | |
| KR20190083817A (en) | Cooking apparatus using steam | |
| CN114532857B (en) | Humidity control method and device of cooking equipment and cooking equipment | |
| CN106192340B (en) | Garment Steamer Machine control method and device | |
| CN214948941U (en) | Variable-temperature adjusting evaporator for processing steamed food | |
| CN104831511B (en) | Electric iron | |
| CN204530274U (en) | The electric iron that a kind of mode of pressing improves | |
| CN220450507U (en) | Heating control circuit and clothes dryer | |
| CN106264160A (en) | The recognition methods of the culinary art type of electricity cooking pot and electricity cooking pot | |
| CN203834258U (en) | Garment steamer | |
| CN104323706A (en) | Precision control electric steaming pot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361100 No. 293, Tong An garden, Tongan Industrial Concentration Area, Fujian, Xiamen Patentee after: Xiamen youo intelligent Polytron Technologies Inc Address before: 361100 No. 293, Tong An garden, Tongan Industrial Concentration Area, Fujian, Xiamen Patentee before: Xiamen Youo Electric Appliances Ltd. |
|
| CP01 | Change in the name or title of a patent holder |