CN104831512A - Temperature control method and temperature control device - Google Patents

Temperature control method and temperature control device Download PDF

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Publication number
CN104831512A
CN104831512A CN201510171380.XA CN201510171380A CN104831512A CN 104831512 A CN104831512 A CN 104831512A CN 201510171380 A CN201510171380 A CN 201510171380A CN 104831512 A CN104831512 A CN 104831512A
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CN
China
Prior art keywords
temperature
silicon controlled
circuit
conducting ratio
less
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CN201510171380.XA
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Chinese (zh)
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CN104831512B (en
Inventor
周义允
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Xiamen youo intelligent Polytron Technologies Inc
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XIAMEN YOUO ELECTRIC APPLIANCES Ltd
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Priority to CN201510171380.XA priority Critical patent/CN104831512B/en
Publication of CN104831512A publication Critical patent/CN104831512A/en
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    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06FLAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
    • D06F75/00Hand irons
    • D06F75/08Hand irons internally heated by electricity
    • D06F75/26Temperature control or indicating arrangements

Abstract

A temperature control device comprises a printed circuit board, a power supply element electrically connected with the printed circuit board, at least one temperature sensing element, and at least one temperature control element, wherein the output end of the temperature sensing element is connected with the enabled end of the printed circuit board; the temperature control element comprises an electric heating tube and a thyristor for controlling the heating power of the electric heating tube; and the enabled end of the thyristor is connected with the output end of the printed circuit board. The invention also discloses the temperature control device working by adopting the above method. According to the temperature control method and the temperature control device, the structure is simple, practicability is strong, accurate temperature control can be realized by arranging the thyristor and using the conduction ratio; and as the actural temperature of the bottom plate in an electric iron at any time is continuous, the conduction ratio changes of the thyristor are also continuous and not sudden, the temperature changes of the bottom plate of the electric iron are small, and automatic constant temperature can be ensured.

Description

A kind of temperature-controlled process and temperature control equipment
Technical field
The present invention relates to domain of control temperature, refer in particular to a kind of temperature-controlled process and temperature control equipment.
Background technology
Temperature control equipment is a kind of common Electronic Control components and parts.For now, existing temperature control equipment is primarily of temperature controller and thermocouple composition, thermocouple detected temperatures also converts the signal of telecommunication to and passes to temperature controller, temperature controller sends control signal according to set temperature, temperature stops heating system higher than the design temperature upper limit or opens cooling system, and rolling off the production line lower than design temperature stops cooling system or open heating system.
Existing electric iron generally includes a base plate and temperature control equipment thereof, and temperature control equipment heats base plate, and base plate carries out flatiron shaping to by Ironing thing.Further, in order to reach better ironing effect, electric iron also has steam function mostly at present.Namely in flatiron, water tank is provided with, above base plate, form a steaming chamber, base plate is formed the steam fumarole communicated with this steaming chamber, in the water instillation steaming chamber in water tank, after being heated, vaporization forms steam, is ejected to clothing its humidification from the steam fumarole bottom base plate.
In electric iron, can base plate keep constant temperature and how keep constant temperature to be the key factor weighing electric iron quality.The temperature control mode of current electric iron mainly adopts the mode of set point switch control rule.It is specifically when after electric iron start, and 100% power heats, and only has after the actual sole plate temperature detected equals design temperature, just can stop heating; Due to the hysteresis quality of temperature, when adding stopping, temperature is very high, actual temperature also can on be flushed to and be much higher than design temperature, cause soleplate temperature width larger.
Summary of the invention
The invention provides a kind of temperature-controlled process and temperature control equipment, its main purpose is the defect that control accuracy is low, temperature difference amplitude is larger overcoming existing temperature-controlled process and temperature control equipment existence.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of temperature-controlled process, comprise the following steps: a, preset the design temperature T0 of target object needing to control, when target object first by low-temperature heat to design temperature T0 time, in circuit, silicon controlled conducting ratio is 100%, when the Current Temperatures of target object is close to T0, detect the Current Temperatures of target object when the very first time, obtain the first detected temperatures T1; The difference DELTA T1 of b, calculating T0-T1; Detect the Current Temperatures of target object when c, the second time after the first time, obtain the second detected temperatures T2; The difference DELTA T2 of d, calculating T0-T2; E, compare Δ T1 and Δ T2 numerical value, when Δ T1 is greater than Δ T2, reduce silicon controlled conducting ratio in circuit, when Δ T1 is less than Δ T2, silicon controlled conducting ratio in increasing circuit.
Further, as Δ T1 and/or Δ T2<0, in circuit, silicon controlled conducting ratio is 0.
Further, as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is greater than 0 and is less than 100%.
Further, before T1 and/or T2 is less than one first trough temperature Tmin1, in circuit, silicon controlled conducting ratio is 100%; After T1 and/or T2 is greater than one first trough temperature Tmin1 and before being less than a primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is reduced to 0% continuously by 100%, and described design temperature T0 is between the first trough temperature Tmin1 and primary peak temperature Tmux1.
Further, after T1 and/or T2 is less than described primary peak temperature Tmux1 and before being greater than a design temperature T0, in circuit, silicon controlled conducting ratio is 0; After T1 and/or T2 is less than described design temperature T0 and before being greater than one second trough temperature Tmin1, go up gradually by 0 meeting silicon controlled conducting ratio in circuit.
A kind of temperature control equipment, it comprises a printed circuit board (PCB), a power supply component be electrically connected with this printed circuit board (PCB), at least one temperature-sensing element and at least one temperature control component, the output of described temperature-sensing element is connected to the Enable Pin of described printed circuit board (PCB), described temperature control component comprises an electrothermal tube and for controlling the controllable silicon of this electrothermal tube heating power size, and described silicon controlled Enable Pin is connected to the output of described printed circuit board (PCB).
Further, during use, the design temperature T0 needing the target object controlled is preset in described printed circuit board (PCB), when target object first by low-temperature heat to design temperature T0 time, in circuit, silicon controlled conducting ratio is 100%, when the Current Temperatures of target object is close to T0, described temperature-sensing element detects the Current Temperatures of target object when the very first time, obtain the first detected temperatures T1; Described printed circuit board (PCB) carries out A/D conversion and calculates the difference DELTA T1 of T0-T1; Detect the Current Temperatures of target object during described temperature-sensing element the second time after the first time, obtain the second detected temperatures T2; Described printed circuit board (PCB) carries out A/D conversion and calculates the difference DELTA T2 of T0-T2; Described printed circuit board (PCB) compares Δ T1 and Δ T2 numerical value, when Δ T1 is greater than Δ T2, reduces silicon controlled conducting ratio in circuit, reduces the heating power of described electrothermal tube; When Δ T1 is less than Δ T2, in increasing circuit, silicon controlled conducting ratio, increases the heating power of described electrothermal tube.
Further, as Δ T1 and/or Δ T2<0, in circuit, silicon controlled conducting ratio is 0, and as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is greater than 0 and is less than 100%.
Further, before T1 and/or T2 is less than one first trough temperature Tmin1, in circuit, silicon controlled conducting ratio is 100%; After T1 and/or T2 is greater than one first trough temperature Tmin1 and before being less than a primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is reduced to 0% continuously by 100%, and described design temperature T0 is between the first trough temperature Tmin1 and primary peak temperature Tmux1.
Further, after T1 and/or T2 is less than described primary peak temperature Tmux1 and before being greater than a design temperature T0, in circuit, silicon controlled conducting ratio is 0; After T1 and/or T2 is less than described design temperature T0 and before being greater than one second trough temperature Tmin1, go up gradually by 0 meeting silicon controlled conducting ratio in circuit.
Compared to the prior art, the beneficial effect that the present invention produces is:
Structure of the present invention is simple, practical, and control by arranging controllable silicon and utilizing its conducting ratio to realize accurate temperature, due to when section in office, in electric iron, actual sole plate temperature is continuous print; The change of silicon controlled conduction ratio is also continuous print, instead of sudden change, thus silicon controlled conduction ratio can followed by the change of Δ T1 and Automatic continuous adjustment in real time, therefore Δ T1 difference can be constant within the scope of very little warm width, thus make the variations in temperature of iron plate very little, ensure automatic constant-temperature.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment one electric iron.
Fig. 2 is the schematic block circuit diagram of attemperating unit described in embodiment one.
When Fig. 3 is in the Regulation of Constant Temperature of described base plate m-baseplate temp graph of a relation and time m-electrothermal tube power relation figure.
Fig. 4 is the schematic block circuit diagram of attemperating unit described in embodiment two.
Detailed description of the invention
With reference to the accompanying drawings the specific embodiment of the present invention is described.
Embodiment one
See figures.1.and.2.A kind of electric iron of temperature control mode improvement, comprise electric iron body 1, be arranged on the base plate 2 bottom this electric iron body 1 and an attemperating unit 3, a temperature control component 30 for heating to it is equiped with above described base plate 2, this attemperating unit 3 comprises a printed circuit board (PCB) 31, one power supply component 32 be electrically connected with this printed circuit board (PCB) 31, at least one temperature-sensing element 33, and at least one described temperature control component 30, the output of described temperature-sensing element 33 is connected to the Enable Pin of described printed circuit board (PCB) 31, described temperature control component 30 comprises an electrothermal tube 301 and for controlling the controllable silicon 302 of this electrothermal tube 301 heating power size, the Enable Pin of described controllable silicon 302 is connected to the output of described printed circuit board (PCB) 31.In the present embodiment, described temperature-sensing element 33 is thermistor.
The Regulation of Constant Temperature of described base plate 2 mainly comprises the following steps: before start or when starting shooting, the design temperature T0 needing the base plate 2 controlled is preset in described printed circuit board (PCB) 31, when base plate 2 first by low-temperature heat to design temperature T0 time, in circuit, the conducting ratio of controllable silicon 302 is 100%, when the Current Temperatures of base plate 2 is close to T0, described temperature-sensing element 33 detects the Current Temperatures of base plate 2 when the very first time, obtain the first detected temperatures T1; Described printed circuit board (PCB) 31 carries out A/D conversion and calculates the difference DELTA T1 of T0-T1; Detect the Current Temperatures of base plate 2 during described temperature-sensing element 33 the second time after the first time, obtain the second detected temperatures T2; Described printed circuit board (PCB) 31 carries out A/D conversion and calculates the difference DELTA T2 of T0-T2; Described printed circuit board (PCB) 31 compares Δ T1 and Δ T2 numerical value, when Δ T1 is greater than Δ T2, reduces the conducting ratio of controllable silicon 302 in circuit, reduces the heating power of described electrothermal tube 301; When Δ T1 is less than Δ T2, the conducting ratio of controllable silicon 302 in increasing circuit, increases the heating power of described electrothermal tube 301.
Afterwards in order to ensure that described base plate 2 remains on design temperature T0 accurately, then must meet the following aspects:
1, as Δ T1 and/or Δ T2<0, in circuit, silicon controlled conducting ratio is 0.
2, as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio can constant in some little fixed values.
3, after T1 and/or T2 is greater than one first trough temperature Tmin1 and before being less than a primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is reduced to 0% continuously by 100%, and described design temperature T0 is between the first trough temperature Tmin1 and primary peak temperature Tmux1.
4, after T1 and/or T2 is less than described primary peak temperature Tmux1 and before being greater than a design temperature T0, in circuit, silicon controlled conducting ratio is 0.
5, after T1 and/or T2 is less than described design temperature T0 and before being greater than one second trough temperature Tmin1, go up gradually by 0 meeting silicon controlled conducting ratio in circuit.
After meeting above-mentioned condition, printed circuit board (PCB) 31, the actual temperature detected, quantize to be converted to digital quantity, and design temperature T0 compares, calculates T0-T1 difference, control the heat time heating time in unit period, constantly to adjust heating power.
When Fig. 3 is in the Regulation of Constant Temperature of described base plate 2 m-baseplate temp graph of a relation and time m-electrothermal tube power relation figure.With reference to Fig. 3.Generally speaking, the Regulation of Constant Temperature of the above base plate 2 comprised with the next stage
The 0-t1 stage: base plate 2 initial temperature T is very low, and T0-T difference is very large; Circuit controls controllable silicon 100% conducting automatically, exports 100% power, with Fast Heating;
In the t1-t2 stage: base plate 2 temperature T is higher, T0-T difference has become more and more less, and final < 0; Circuit automatically controls controlled silicon conducting ratio and starts more and more less, and power stage is reduced to 0% continuously from 100%;
In the t2-t3 stage: base plate 2 temperature T falls after rise gradually, T0-T difference goes back up to gradually from < 0 and hovers near 0; Circuit automatically controls controlled silicon conducting ratio and strengthens gradually, and power gos up gradually from 0%;
T4 is with after-stage: base plate 2 temperature T is stabilized near default T0, and T0-T difference is stabilized in the very low range near 0; It is constant in certain proportion that circuit controls controlled silicon conducting automatically, and power invariability is at the power of insulation.
When section in office, base plate 2 actual temperature is continuous print; The change of power is also continuous print, instead of sudden change, and followed by T0-T difference in real time and Automatic continuous adjustment, so T0-T difference can be constant within the scope of very little warm width.
Embodiment two
With reference to Fig. 4.Owing to being provided with steam forming device and steam heater in the electric iron of the present embodiment, described temperature-sensing element 33 is respectively arranged with three, and be connected on base plate 2, steam forming device and steam heater, be respectively used to sense base plate 2 temperature, the temperature of water and vapor (steam) temperature.Temperature control component 30 is respectively arranged with three, and is connected on base plate 2, steam forming device and steam heater, is respectively used to control base plate 2 temperature, the temperature of water and vapor (steam) temperature.
The mode that mode and the temperature control component 30 pairs of base plates 2 carrying out heated at constant temperature due to temperature control component 30 pairs of water carry out heated at constant temperature is identical, is not thus described in detail its detailed process herein.
The mode that mode and the temperature control component 30 pairs of base plates 2 carrying out heated at constant temperature due to temperature control component 30 pairs of steam carry out heated at constant temperature is identical, is not thus described in detail its detailed process herein.
In addition, the temperature-controlled process that the present invention discloses and temperature control equipment are not limited to and carry out thermostatic control to the temperature of base plate 2 temperature, water and vapor (steam) temperature in electric iron, can also be applied in other household electrical appliances and need to carry out in thermostatically controlled occasion, such as be applied in ironer, water dispenser, baking oven, electric wind blow, disinfection cabinet, drying room, water heater, textile of chemical fibre heater and other electric equipments.
Above are only the specific embodiment of the present invention, but design concept of the present invention is not limited thereto, all changes utilizing this design the present invention to be carried out to unsubstantiality, all should belong to the behavior of invading scope.

Claims (10)

1. a temperature-controlled process, it is characterized in that, comprise the following steps: a, preset the design temperature T0 of target object needing to control, when target object first by low-temperature heat to design temperature T0 time, in circuit, silicon controlled conducting ratio is 100%, when the Current Temperatures of target object is close to T0, detects the Current Temperatures of target object when the very first time, obtain the first detected temperatures T1; The difference DELTA T1 of b, calculating T0-T1; Detect the Current Temperatures of target object when c, the second time after the first time, obtain the second detected temperatures T2; The difference DELTA T2 of d, calculating T0-T2; E, compare Δ T1 and Δ T2 numerical value, when Δ T1 is greater than Δ T2, reduce silicon controlled conducting ratio in circuit, when Δ T1 is less than Δ T2, silicon controlled conducting ratio in increasing circuit.
2. a kind of temperature-controlled process as claimed in claim 1, is characterized in that: as Δ T1 and/or Δ T2<0, in circuit, silicon controlled conducting ratio is 0.
3. a kind of temperature-controlled process as claimed in claim 2, is characterized in that: as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is greater than 0 and is less than 100%.
4. a kind of temperature-controlled process as claimed in claim 3, it is characterized in that: before T1 and/or T2 is less than one first trough temperature Tmin1, in circuit, silicon controlled conducting ratio is 100%; After T1 and/or T2 is greater than one first trough temperature Tmin1 and before being less than a primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is reduced to 0% continuously by 100%, and described design temperature T0 is between the first trough temperature Tmin1 and primary peak temperature Tmux1.
5. a kind of temperature-controlled process as claimed in claim 4, is characterized in that: after T1 and/or T2 is less than described primary peak temperature Tmux1 and before being greater than a design temperature T0, in circuit, silicon controlled conducting ratio is 0; After T1 and/or T2 is less than described design temperature T0 and before being greater than one second trough temperature Tmin1, go up gradually by 0 meeting silicon controlled conducting ratio in circuit.
6. a temperature control equipment, it comprises a printed circuit board (PCB), a power supply component be electrically connected with this printed circuit board (PCB), at least one temperature-sensing element and at least one temperature control component, it is characterized in that: the output of described temperature-sensing element is connected to the Enable Pin of described printed circuit board (PCB), described temperature control component comprises an electrothermal tube and for controlling the controllable silicon of this electrothermal tube heating power size, and described silicon controlled Enable Pin is connected to the output of described printed circuit board (PCB).
7. a kind of temperature control equipment as claimed in claim 6, it is characterized in that: during use, the design temperature T0 needing the target object controlled is preset in described printed circuit board (PCB), when target object first by low-temperature heat to design temperature T0 time, in circuit, silicon controlled conducting ratio is 100%, when the Current Temperatures of target object is close to T0, described temperature-sensing element detects the Current Temperatures of target object when the very first time, obtain the first detected temperatures T1; Described printed circuit board (PCB) carries out A/D conversion and calculates the difference DELTA T1 of T0-T1; Detect the Current Temperatures of target object during described temperature-sensing element the second time after the first time, obtain the second detected temperatures T2; Described printed circuit board (PCB) carries out A/D conversion and calculates the difference DELTA T2 of T0-T2; Described printed circuit board (PCB) compares Δ T1 and Δ T2 numerical value, when Δ T1 is greater than Δ T2, reduces silicon controlled conducting ratio in circuit, reduces the heating power of described electrothermal tube; When Δ T1 is less than Δ T2, in increasing circuit, silicon controlled conducting ratio, increases the heating power of described electrothermal tube.
8. a kind of temperature control equipment as claimed in claim 7, it is characterized in that: as Δ T1 and/or Δ T2<0, in circuit, silicon controlled conducting ratio is 0, as Δ T1 and/or Δ T2=0, in circuit, silicon controlled conducting ratio is greater than 0 and is less than 100%.
9. a kind of temperature control equipment as claimed in claim 8, it is characterized in that: before T1 and/or T2 is less than one first trough temperature Tmin1, in circuit, silicon controlled conducting ratio is 100%; After T1 and/or T2 is greater than one first trough temperature Tmin1 and before being less than a primary peak temperature Tmux1, in circuit, silicon controlled conducting ratio is reduced to 0% continuously by 100%, and described design temperature T0 is between the first trough temperature Tmin1 and primary peak temperature Tmux1.
10. a kind of temperature control equipment as claimed in claim 9, is characterized in that: after T1 and/or T2 is less than described primary peak temperature Tmux1 and before being greater than a design temperature T0, in circuit, silicon controlled conducting ratio is 0; After T1 and/or T2 is less than described design temperature T0 and before being greater than one second trough temperature Tmin1, go up gradually by 0 meeting silicon controlled conducting ratio in circuit.
CN201510171380.XA 2015-04-13 2015-04-13 Temperature control method and temperature control device Active CN104831512B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105040387A (en) * 2015-09-16 2015-11-11 中山市元亨家居用品有限公司 Heat storage body of electric iron
CN109363528A (en) * 2018-11-22 2019-02-22 厦门芯阳科技股份有限公司 A kind of control method and baking tray of no smoke machine baking tray
CN111356511A (en) * 2018-03-14 2020-06-30 株式会社岛津制作所 Supercritical fluid separation device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2068596A (en) * 1980-01-24 1981-08-12 Plessey Co Ltd Parameter controller
EP0293853A1 (en) * 1987-06-05 1988-12-07 MEMMERT GMBH &amp; CO KG, wärme-, medizin- und labortechnische Elektro-Geräte Method for controlling the temperature, and a temperature control circuit
CN102389254A (en) * 2011-09-02 2012-03-28 广东伊立浦电器股份有限公司 Temperature control method of electric heating kitchenware
CN203908044U (en) * 2014-05-09 2014-10-29 中山市广盛实业有限公司 Flow control system of electric water heater
CN204530278U (en) * 2015-04-13 2015-08-05 厦门优尔电器股份有限公司 A kind of attemperating unit and use the electric iron of this attemperating unit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2068596A (en) * 1980-01-24 1981-08-12 Plessey Co Ltd Parameter controller
EP0293853A1 (en) * 1987-06-05 1988-12-07 MEMMERT GMBH &amp; CO KG, wärme-, medizin- und labortechnische Elektro-Geräte Method for controlling the temperature, and a temperature control circuit
CN102389254A (en) * 2011-09-02 2012-03-28 广东伊立浦电器股份有限公司 Temperature control method of electric heating kitchenware
CN203908044U (en) * 2014-05-09 2014-10-29 中山市广盛实业有限公司 Flow control system of electric water heater
CN204530278U (en) * 2015-04-13 2015-08-05 厦门优尔电器股份有限公司 A kind of attemperating unit and use the electric iron of this attemperating unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105040387A (en) * 2015-09-16 2015-11-11 中山市元亨家居用品有限公司 Heat storage body of electric iron
CN111356511A (en) * 2018-03-14 2020-06-30 株式会社岛津制作所 Supercritical fluid separation device
CN111356511B (en) * 2018-03-14 2022-03-11 株式会社岛津制作所 Supercritical fluid separation device
CN109363528A (en) * 2018-11-22 2019-02-22 厦门芯阳科技股份有限公司 A kind of control method and baking tray of no smoke machine baking tray

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Address after: 361100 No. 293, Tong An garden, Tongan Industrial Concentration Area, Fujian, Xiamen

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