CN104821484A - Pulse modulation drive circuit of miniature semiconductor laser - Google Patents
Pulse modulation drive circuit of miniature semiconductor laser Download PDFInfo
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- CN104821484A CN104821484A CN201510219736.2A CN201510219736A CN104821484A CN 104821484 A CN104821484 A CN 104821484A CN 201510219736 A CN201510219736 A CN 201510219736A CN 104821484 A CN104821484 A CN 104821484A
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Abstract
The invention discloses a pulse modulation drive circuit of a miniature semiconductor laser. The pulse modulation drive circuit comprises an external power supply interface circuit, a pulse generating circuit, a pulse shaping circuit, a high-speed pulse amplifier circuit, and a laser driver main power generation circuit. When the provided pulse modulation drive circuit is applied to the semiconductor laser, the power consumption and heating value of the semiconductor laser can be reduced; and the circuit has a small size and is suitable for a hand-held semiconductor laser with the small physical space. Meanwhile, the circuit has characteristics of simple structure, reliable performance, fast pulse response, high pulse output power, and high anti-interference performance.
Description
Technical field
The present invention relates to semiconductor laser electronic circuit technology field, particularly relate to a kind of micro semiconductor laser device pulse modulation drive circuit.
Background technology
Semiconductor laser is the ripe class laser comparatively early, to make fast progress, its range of application covers whole opto-electronics, become the core technology of current photoelectron science, but at present, the drive circuit of micro semiconductor laser device all adopts continuous light to export, under medium and long distance lighting demand, energy consumption shared by the drive circuit of continuous light filling is higher, and produce larger heat, cause equipment task time shorter, the problems such as equipment heating amount is larger.
Summary of the invention
For above-mentioned technical problem, the object of the present invention is to provide a kind of micro semiconductor laser device pulse modulation drive circuit, by this circuit application in semiconductor laser, equipment power dissipation can be reduced, reduce caloric value, and this circuit volume is little, is applicable to the portable equipment that physical space is less.
For reaching this object, the present invention by the following technical solutions:
A kind of micro semiconductor laser device pulse modulation drive circuit, comprising: external power source interface circuit, pulse-generating circuit, pulse shaper, high-speed pulse amplifying circuit and laser drive main power source to produce circuit;
Described external power source interface circuit is connected with each circuit power input, for introducing external power source;
Described pulse-generating circuit output connects pulse shaper input, for generation of output of pulse signal to pulse shaper;
Described pulse shaper output connects the flourishing circuit input end of high-speed pulse, carries out shaping for pulse signals, produces high speed rising edge pulse signal and outputs to high-speed pulse amplifying circuit;
Described high-speed pulse amplification circuit output end connecting laser, for amplifying the high speed rising edge pulse signal produced after shaping, producing pulse current and outputting to laser;
Described laser drives main power source to produce circuit output end connection high-speed pulse amplifying circuit, provides driving voltage for giving high-speed pulse amplifying circuit.
Especially, described external power source interface circuit comprises three interfaces, introduce outside+7.4V ,+5V and+12V three kinds of power supplys respectively, + the 5V introduced respectively after electric capacity C10, C11 of parallel connection ground connection and after electric capacity C12, C13 of parallel connection ground connection ,+the 12V of introducing respectively after electric capacity C26, C27 of parallel connection ground connection and after electric capacity C28, C29 of parallel connection ground connection and after electric capacity C30, C31 of parallel connection ground connection.
Especially, described pulse-generating circuit comprises resistance R1, adjustable resistance RP2, resistance R5, diode D1, diode D3, electric capacity C5, electric capacity C7 and Shi Ji chip U2, wherein, resistance R1, adjustable resistance RP2, resistance R5, diode D3, electric capacity C7 is connected in series between+5V the interface of external power source interface circuit and ground, one end of resistance R1 connects the+5V interface of external power source interface circuit, the other end connects adjustable resistance RP2 fixed resistance value end, one end of adjustable resistance RP2 fixed resistance value other end contact resistance R5, the other end of resistance R5 connects the negative electrode of diode D3, the anode of diode D3 connects one end of electric capacity C7, the other end ground connection of electric capacity C7, time base chip U2 No. 1 pin ground connection, time base chip U2 No. 2 pins connect the negative electrode of diode D1, No. 7 pins of base chip U2 when the anode of diode D1 is connected with the adjustment pin of adjustable resistance RP2, time base chip U2 No. 3 pins connect pulse shapers, time No. 4 of base chip U2, No. 8 pins connect the+5V interface of external power source interface circuit, time base chip U2 No. 5 pin series capacitance C5 after ground connection, No. 6 pins of base chip U2 connect the anode of diode D3.
Especially, described pulse shaper comprises adjustable resistance RP1, resistance R4, resistance R9, resistance R10, electric capacity C6 and flip-flop chip U3, wherein, No. 1 of flip-flop chip U3, No. 8 pin ground connection, No. 3 pins of base chip U2 when No. 2 pins of flip-flop chip U3 connect in pulse-generating circuit, No. 3 of flip-flop chip U3, No. 16 pins connect the+5V interface of external power source interface circuit, one end of No. 13 pin contact resistance R9 of flip-flop chip U3, the other end of resistance R9 connects high-speed pulse amplifying circuit and ground connection after resistance R10 respectively, No. 14 pins of flip-flop chip U3 connect one end of electric capacity C6 and ground connection, the other end of electric capacity C6 connects No. 15 pins of flip-flop chip U3, adjustable resistance RP1 and resistance R4 is connected in series between+5V the interface of external power source interface circuit and No. 15 pins of flip-flop chip U3, one end of adjustable resistance RP1 fixed resistance value connects+5V the interface of external power source interface circuit, one end of the other end contact resistance R4 of adjustable resistance RP1 fixed resistance value, the other end of resistance R4 connects No. 15 pins of flip-flop chip U3, the adjustment pin of adjustable resistance RP1 connects the+5V interface of external power source interface circuit.
Especially, described high-speed pulse amplifying circuit comprises charge reversal circuit, amplifying circuit, range-adjusting circuit, metal-oxide-semiconductor drive circuit and match circuit, wherein:
Charge reversal circuit comprises electric capacity C1, electric capacity C2 and charge reversal chip U1, wherein, No. 2 pins of charge reversal chip U1 connect the positive pole of electric capacity C1, the negative pole of electric capacity C1 connects No. 4 pins of charge reversal chip U1, No. 5 pins of charge reversal chip U1 connect the negative pole of electric capacity C2, the plus earth of electric capacity C2, No. 5 pins of charge reversal chip U1 export-12V voltage, and No. 8 pins of charge reversal chip U1 connect the+12V interface of external power source interface circuit;
Amplifying circuit comprises resistance R2, resistance R6, electric capacity C3 and high speed amplifier chip U4, wherein, ground connection after No. 2 pin series resistance R6 of high speed amplifier chip U4, No. 3 pins of high speed amplifier chip U4 connect the common port of resistance R9 and resistance R10 in pulse shaper, No. 4 pins of high speed amplifier chip U4 connect No. 5 pins of charge reversal chip U4 in charge reversal circuit, No. 6 pins of high speed amplifier chip U4 connect range-adjusting circuit, No. 7 pins of high speed amplifier chip U4 connect the+12V interface of external power source interface circuit, between No. 2 pins being connected in series in high speed amplifier chip U4 after resistance R6 is in parallel with electric capacity C3 and No. 6 pins,
Range-adjusting circuit comprises adjustable resistance RP3, and the two ends of adjustable resistance RP3 fixed resistance value connect No. 6 pins and the ground of amplifying circuit high speed amplifier chip U4 respectively, and the adjustable foot of adjustable resistance RP3 connects metal-oxide-semiconductor drive circuit;
Metal-oxide-semiconductor drive circuit comprises resistance R7, resistance R8, resistance R11, resistance R12, electric capacity C8, electric capacity C9, triode Q1, triode Q3 and metal-oxide-semiconductor Q2, wherein, electric capacity C8 is connected the adjustable foot of adjustable resistance RP3 in range-adjusting circuit with one end after resistance R7 parallel connection, ground connection after other end series resistance R11, triode Q1, the common port of the base stage equal contact resistance R7 and resistance R11 of triode Q3, the collector electrode of triode Q1 connects the+12V interface of external power source interface circuit, the emitter of the emitter connecting triode Q3 of triode Q1, the grounded collector of triode Q3, the emitter of one end connecting triode Q1 after electric capacity C9 is in parallel with resistance R8, the other end connects the grid of metal-oxide-semiconductor Q2, ground connection after the gate series resistance R12 of metal-oxide-semiconductor Q2, the source ground of metal-oxide-semiconductor Q2, the drain electrode matching connection circuit of metal-oxide-semiconductor Q2,
Match circuit comprises resistance R3, diode D2 and electric capacity C4, wherein, after resistance R3, diode D2 and electric capacity C4 parallel connection, one end connecting laser drives main power source to produce circuit outputting drive voltage end, the other end connects the drain electrode of metal-oxide-semiconductor Q2 in metal-oxide-semiconductor drive circuit, connecting laser after another resistance R3, diode D2 and electric capacity C4 parallel connection.
Especially, described laser drives main power source generation circuit to comprise electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, electric capacity C25, resistance R13, resistance R14, resistance R15, resistance R16 and switching power source chip U5, wherein, electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, the equal one end of electric capacity C19 connects the+7.4V interface of external power source interface circuit, other end ground connection, No. 1 pin of switching power source chip U5, No. 2 pins connect the+7.4V interface of external power source interface circuit, No. 3 pins of switching power source chip U5, No. 5 pins, No. 6 pins and No. 12 pin ground connection, No. 4 pins of one end connecting valve power supply chip U5 after resistance R13 and resistance R14 connects, other end ground connection, resistance R13 is connected the+5V interface of external power source interface circuit with the common port of resistance R14, No. 7 pin contact resistance R15 of switching power source chip U5 and the common port of resistance R16, ground connection after No. 8 pin series capacitance C20 of switching power source chip U5, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, No. 10 pins of electric capacity C25 equal one end connecting valve power supply chip U5, No. 11 pins and outputting drive voltage end, other end ground connection, after resistance R15 connects with resistance R16, one end is connected outputting drive voltage end, other end ground connection.
Especially, described triode Q1 adopts NPN type triode, and described triode Q3 adopts PNP type triode.
Especially, described flip-flop chip U3 model is 74HC244.
The micro semiconductor laser device pulse modulation drive circuit that the present invention proposes is applied in semiconductor laser, can reduce semiconductor laser power consumption, reduce caloric value, and this circuit volume is little, is applicable to the hand-hold type semiconductor laser that physical space is less.Meanwhile, this circuit has that structure is simple, dependable performance, impulse response is rapid, pulse output power is large, the feature of strong interference immunity.
Accompanying drawing explanation
The external power source interface circuit structure figure that Fig. 1 provides for the embodiment of the present invention;
The pulse-generating circuit structure chart that Fig. 2 provides for the embodiment of the present invention;
The pulse shaper structure chart that Fig. 3 provides for the embodiment of the present invention;
The high-speed pulse amplification circuit structure figure that Fig. 4 provides for the embodiment of the present invention;
The charge reversal circuit structure diagram that Fig. 5 provides for the embodiment of the present invention;
The amplification circuit structure figure that Fig. 6 provides for the embodiment of the present invention;
The range-adjusting circuit structure diagram that Fig. 7 provides for the embodiment of the present invention;
The metal-oxide-semiconductor driving circuit structure figure that Fig. 8 provides for the embodiment of the present invention;
The match circuit structure chart that Fig. 9 provides for the embodiment of the present invention;
The laser driving main power source that Figure 10 provides for the embodiment of the present invention produces circuit structure diagram.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content, unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present invention understand usually.The object of term used in the description of the invention herein just in order to describe specific embodiment, is not intended to be restriction the present invention.Term as used herein " and/or " comprise arbitrary and all combinations of one or more relevant Listed Items.
A kind of micro semiconductor laser device pulse modulation drive circuit specifically comprises external power source interface circuit, pulse-generating circuit, pulse shaper, high-speed pulse amplifying circuit and laser and drives main power source to produce circuit.
Described external power source interface circuit is connected with each circuit power input, for introducing external power source.
As shown in Figure 1, the external power source interface circuit structure figure that provides for the embodiment of the present invention of Fig. 1.In the present embodiment, external power source interface circuit comprises three interfaces, all adopts small size outer input interface, introduces outside+7.4V ,+5V and+12V three kinds of power supplys respectively.+ the 5V introduced respectively after electric capacity C10, C11 of parallel connection ground connection and after electric capacity C12, C13 of parallel connection ground connection ,+the 12V of introducing respectively after electric capacity C26, C27 of parallel connection ground connection and after electric capacity C28, C29 of parallel connection ground connection and after electric capacity C30, C31 of parallel connection ground connection.
Described pulse-generating circuit output connects pulse shaper input, for generation of output of pulse signal to pulse shaper.
As shown in Figure 2, the pulse-generating circuit structure chart that provides for the embodiment of the present invention of Fig. 2.In the present embodiment, pulse-generating circuit specifically comprises resistance R1, adjustable resistance RP2, resistance R5, diode D1, diode D3, electric capacity C5, electric capacity C7 and Shi Ji chip U2.Wherein, resistance R1, adjustable resistance RP2, resistance R5, diode D3, electric capacity C7 is connected in series between+5V the interface of external power source interface circuit and ground, one end of resistance R1 connects the+5V interface of external power source interface circuit, the other end connects adjustable resistance RP2 fixed resistance value end, one end of adjustable resistance RP2 fixed resistance value other end contact resistance R5, the other end of resistance R5 connects the negative electrode of diode D3, the anode of diode D3 connects one end of electric capacity C7, the other end ground connection of electric capacity C7, time base chip U2 No. 1 pin ground connection, time base chip U2 No. 2 pins connect the negative electrode of diode D1, No. 7 pins of base chip U2 when the anode of diode D1 is connected with the adjustment pin of adjustable resistance RP2, time base chip U2 No. 3 pins connect pulse shapers, time No. 4 of base chip U2, No. 8 pins connect the+5V interface of external power source interface circuit, time base chip U2 No. 5 pin series capacitance C5 after ground connection, No. 6 pins of base chip U2 connect the anode of diode D3.This pulse-generating circuit adopts the timer circuit of good stability to produce pulse signal, time base chip U2 No. 3 pins be its output, output pulse signal to pulse shaper, simultaneously, regulate adjustable resistance RP2, can the output frequency of regulation output pulse signal further.
Described pulse shaper output connects high-speed pulse input amplifier, carries out shaping for pulse signals, produces high speed rising edge pulse signal and outputs to high-speed pulse amplifying circuit.
As shown in Figure 3, the pulse shaper structure chart that provides for the embodiment of the present invention of Fig. 3.In the present embodiment, pulse shaper specifically comprises adjustable resistance RP1, resistance R4, resistance R9, resistance R10, electric capacity C6 and flip-flop chip U3, and flip-flop chip U3 model is 74HC244.Wherein, No. 1 of flip-flop chip U3, No. 8 pin ground connection, No. 3 pins of base chip U2 when No. 2 pins of flip-flop chip U3 connect in pulse-generating circuit, No. 3 of flip-flop chip U3, No. 16 pins connect the+5V interface of external power source interface circuit, one end of No. 13 pin contact resistance R9 of flip-flop chip U3, the other end of resistance R9 connects high-speed pulse amplifying circuit and ground connection after resistance R10 respectively, No. 14 pins of flip-flop chip U3 connect one end of electric capacity C6 and ground connection, the other end of electric capacity C6 connects No. 15 pins of flip-flop chip U3, adjustable resistance RP1 and resistance R4 is connected in series between+5V the interface of external power source interface circuit and No. 15 pins of flip-flop chip U3, one end of adjustable resistance RP1 fixed resistance value connects+5V the interface of external power source interface circuit, one end of the other end contact resistance R4 of adjustable resistance RP1 fixed resistance value, the other end of resistance R4 connects No. 15 pins of flip-flop chip U3, the adjustment pin of adjustable resistance RP1 connects the+5V interface of external power source interface circuit.The pulse signal that this pulse shaper paired pulses produces circuit output carries out shaping, can obtain the pulse reaching nanosecond rising edge speed, provides high-quality pulse control signal for fast driving laser produces pulse laser.No. 2 pins of flip-flop chip U3 are pulse shaper input, and the common port of resistance R9 and resistance R10 is pulse shaper output, and the high speed rising edge pulse signal obtained after shaping outputs to high-speed pulse amplifying circuit.Meanwhile, adjustable resistance RP1 is regulated, the rising edge speed of the high speed rising edge pulse signal exported after can regulating shaping further and duty ratio.
Described high-speed pulse amplification circuit output end connecting laser, for amplifying the high speed rising edge pulse signal produced after shaping, producing pulse current and outputting to laser.
As shown in Figure 4, the high-speed pulse amplification circuit structure figure that provides for the embodiment of the present invention of Fig. 4.In the present embodiment, high-speed pulse amplifying circuit specifically comprises charge reversal circuit, amplifying circuit, range-adjusting circuit, metal-oxide-semiconductor drive circuit and match circuit, wherein:
As shown in Figure 5, the charge reversal circuit structure diagram that provides for the embodiment of the present invention of Fig. 5.In the present embodiment, charge reversal circuit specifically comprises electric capacity C1, electric capacity C2 and charge reversal chip U1.Wherein, No. 2 pins of charge reversal chip U1 connect the positive pole of electric capacity C1, the negative pole of electric capacity C1 connects No. 4 pins of charge reversal chip U1, No. 5 pins of charge reversal chip U1 connect the negative pole of electric capacity C2, the plus earth of electric capacity C2, No. 5 pins of charge reversal chip U1 export-12V voltage, and No. 8 pins of charge reversal chip U1 connect the+12V interface of external power source interface circuit.+ the 12V of external power source interface circuit reverses and exports-12V voltage by this charge reversal circuit, powers to amplifying circuit high speed amplifier chip U4.
As shown in Figure 6, the amplification circuit structure figure that provides for the embodiment of the present invention of Fig. 6.In the present embodiment, amplifying circuit specifically comprises resistance R2, resistance R6, electric capacity C3 and high speed amplifier chip U4, wherein, ground connection after No. 2 pin series resistance R6 of high speed amplifier chip U4, No. 3 pins of high speed amplifier chip U4 connect the common port of resistance R9 and resistance R10 in pulse shaper, No. 4 pins of high speed amplifier chip U4 connect No. 5 pins of charge reversal chip U4 in charge reversal circuit, No. 6 pins of high speed amplifier chip U4 connect range-adjusting circuit, No. 7 pins of high speed amplifier chip U4 connect the+12V interface of external power source interface circuit, between No. 2 pins being connected in series in high speed amplifier chip U4 after resistance R6 is in parallel with electric capacity C3 and No. 6 pins.The high speed rising edge pulse signal code that pulse shaper exports is very faint, and this amplifying circuit carries out high speed to the pulse signal after shaping and amplifies, and the pulse signal after amplification outputs to range-adjusting circuit by No. 6 pins of high speed amplifier chip U4.
As shown in Figure 7, the range-adjusting circuit structure diagram that provides for the embodiment of the present invention of Fig. 7.In the present embodiment, range-adjusting circuit specifically comprises adjustable resistance RP3, and the two ends of adjustable resistance RP3 fixed resistance value connect No. 6 pins and the ground of amplifying circuit high speed amplifier chip U4 respectively, and the adjustable foot of adjustable resistance RP3 connects metal-oxide-semiconductor drive circuit.Regulate adjustable resistance RP3, can the amplitude of regulating impulse signal further, output to metal-oxide-semiconductor drive circuit after the amplitude of the pulse signal after this range-adjusting circuit improves amplification further.
As shown in Figure 8, the metal-oxide-semiconductor driving circuit structure figure that provides for the embodiment of the present invention of Fig. 8.In the present embodiment, metal-oxide-semiconductor drive circuit specifically comprises resistance R7, resistance R8, resistance R11, resistance R12, electric capacity C8, electric capacity C9, triode Q1, triode Q3 and metal-oxide-semiconductor Q2, and triode Q1, Q3 adopt NPN and PNP type triode respectively.Wherein, electric capacity C8 is connected the adjustable foot of adjustable resistance RP3 in range-adjusting circuit with one end after resistance R7 parallel connection, ground connection after other end series resistance R11, triode Q1, the common port of the base stage equal contact resistance R7 and resistance R11 of triode Q3, the collector electrode of triode Q1 connects the+12V interface of external power source interface circuit, the emitter of the emitter connecting triode Q3 of triode Q1, the grounded collector of triode Q3, the emitter of one end connecting triode Q1 after electric capacity C9 is in parallel with resistance R8, the other end connects the grid of metal-oxide-semiconductor Q2, ground connection after the gate series resistance R12 of metal-oxide-semiconductor Q2, the source ground of metal-oxide-semiconductor Q2, the drain electrode matching connection circuit of metal-oxide-semiconductor Q2.Pulse signal after the raising amplitude that range-adjusting circuit exports is through metal-oxide-semiconductor drive circuit, and the high-quality pulse current of final formation, outputs to match circuit by the drain electrode of metal-oxide-semiconductor Q2.
As shown in Figure 9, the match circuit structure chart that provides for the embodiment of the present invention of Fig. 9.In the present embodiment, match circuit comprises resistance R3, diode D2 and electric capacity C4, wherein, after resistance R3, diode D2 and electric capacity C4 parallel connection, one end connecting laser drives main power source to produce the driving voltage end of circuit output, the other end connects the drain electrode of metal-oxide-semiconductor Q2 in metal-oxide-semiconductor drive circuit, connecting laser after another resistance R3, diode D2 and electric capacity C4 parallel connection.The pulse current that metal-oxide-semiconductor drive circuit exports is converted into through match circuit the signal matched with laser input and outputs to laser two ends.
The pulse signal that described high-speed pulse amplifying circuit paired pulses shaping circuit exports carries out amplifying, improving amplitude and driving, No. 3 pins of high speed amplifier chip U4 are high-speed pulse input amplifier, two ends after resistance R3, diode D2 and electric capacity C4 parallel connection are high-speed pulse amplification circuit output end, and the pulse current amplifying, improve amplitude and obtain after driving outputs to laser.
Described laser drives main power source to produce circuit output end connection high-speed pulse amplifying circuit, provides driving voltage for giving high-speed pulse amplifying circuit.
As shown in Figure 10, the laser driving main power source that Figure 10 provides for the embodiment of the present invention produces circuit structure diagram.In the present embodiment, laser drives main power source generation circuit specifically to comprise electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, electric capacity C25, resistance R13, resistance R14, resistance R15, resistance R16 and switching power source chip U5, wherein, electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, the equal one end of electric capacity C19 connects the+7.4V interface of external power source interface circuit, other end ground connection, No. 1 pin of switching power source chip U5, No. 2 pins connect the+7.4V interface of external power source interface circuit, No. 3 pins of switching power source chip U5, No. 5 pins, No. 6 pins and No. 12 pin ground connection, No. 4 pins of one end connecting valve power supply chip U5 after resistance R13 and resistance R14 connects, other end ground connection, resistance R13 is connected the+5V interface of external power source interface circuit with the common port of resistance R14, No. 7 pin contact resistance R15 of switching power source chip U5 and the common port of resistance R16, ground connection after No. 8 pin series capacitance C20 of switching power source chip U5, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, No. 10 pins of electric capacity C25 equal one end connecting valve power supply chip U5, No. 11 pins and outputting drive voltage end, other end ground connection, after resistance R15 connects with resistance R16, one end is connected outputting drive voltage end, other end ground connection.Described switching power source chip U5 adopts high power switching power supply chip, and can produce the output current of 10A, output voltage is the highest can adjust to 6V, meets the specified electric parameter requirement of single-tube laser completely.No. 10 pins, No. 11 pins of switching power source chip U5 are that laser drives main power source to produce circuit output end, and outputting drive voltage, to high-speed pulse amplifying circuit, provides driving voltage to high-speed pulse amplifying circuit.
Technical scheme of the present invention is applied in semiconductor laser, can reduce semiconductor laser power consumption, reduce caloric value, and this circuit volume is little, is applicable to the hand-hold type semiconductor laser that physical space is less.Meanwhile, this circuit has that structure is simple, dependable performance, impulse response is rapid, pulse output power is large, the feature of strong interference immunity.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (8)
1. a micro semiconductor laser device pulse modulation drive circuit, is characterized in that, comprising: external power source interface circuit, pulse-generating circuit, pulse shaper, high-speed pulse amplifying circuit and laser drive main power source to produce circuit;
Described external power source interface circuit is connected with each circuit power input, for introducing external power source;
Described pulse-generating circuit output connects pulse shaper input, for generation of output of pulse signal to pulse shaper;
Described pulse shaper output connects the flourishing circuit input end of high-speed pulse, carries out shaping for pulse signals, produces high speed rising edge pulse signal and outputs to high-speed pulse amplifying circuit;
Described high-speed pulse amplification circuit output end connecting laser, for amplifying the high speed rising edge pulse signal produced after shaping, producing pulse current and outputting to laser;
Described laser drives main power source to produce circuit output end connection high-speed pulse amplifying circuit, provides driving voltage for giving high-speed pulse amplifying circuit.
2. micro semiconductor laser device pulse modulation drive circuit according to claim 1, it is characterized in that, described external power source interface circuit comprises three interfaces, introduce outside+7.4V ,+5V and+12V three kinds of power supplys respectively, + the 5V introduced respectively after electric capacity C10, C11 of parallel connection ground connection and after electric capacity C12, C13 of parallel connection ground connection ,+the 12V of introducing respectively after electric capacity C26, C27 of parallel connection ground connection and after electric capacity C28, C29 of parallel connection ground connection and after electric capacity C30, C31 of parallel connection ground connection.
3. micro semiconductor laser device pulse modulation drive circuit according to claim 2, it is characterized in that, described pulse-generating circuit comprises resistance R1, adjustable resistance RP2, resistance R5, diode D1, diode D3, electric capacity C5, electric capacity C7 and Shi Ji chip U2, wherein, resistance R1, adjustable resistance RP2, resistance R5, diode D3, electric capacity C7 is connected in series between+5V the interface of external power source interface circuit and ground, one end of resistance R1 connects the+5V interface of external power source interface circuit, the other end connects adjustable resistance RP2 fixed resistance value end, one end of adjustable resistance RP2 fixed resistance value other end contact resistance R5, the other end of resistance R5 connects the negative electrode of diode D3, the anode of diode D3 connects one end of electric capacity C7, the other end ground connection of electric capacity C7, time base chip U2 No. 1 pin ground connection, time base chip U2 No. 2 pins connect the negative electrode of diode D1, No. 7 pins of base chip U2 when the anode of diode D1 is connected with the adjustment pin of adjustable resistance RP2, time base chip U2 No. 3 pins connect pulse shapers, time No. 4 of base chip U2, No. 8 pins connect the+5V interface of external power source interface circuit, time base chip U2 No. 5 pin series capacitance C5 after ground connection, No. 6 pins of base chip U2 connect the anode of diode D3.
4. micro semiconductor laser device pulse modulation drive circuit according to claim 3, it is characterized in that, described pulse shaper comprises adjustable resistance RP1, resistance R4, resistance R9, resistance R10, electric capacity C6 and flip-flop chip U3, wherein, No. 1 of flip-flop chip U3, No. 8 pin ground connection, No. 3 pins of base chip U2 when No. 2 pins of flip-flop chip U3 connect in pulse-generating circuit, No. 3 of flip-flop chip U3, No. 16 pins connect the+5V interface of external power source interface circuit, one end of No. 13 pin contact resistance R9 of flip-flop chip U3, the other end of resistance R9 connects high-speed pulse amplifying circuit and ground connection after resistance R10 respectively, No. 14 pins of flip-flop chip U3 connect one end of electric capacity C6 and ground connection, the other end of electric capacity C6 connects No. 15 pins of flip-flop chip U3, adjustable resistance RP1 and resistance R4 is connected in series between+5V the interface of external power source interface circuit and No. 15 pins of flip-flop chip U3, one end of adjustable resistance RP1 fixed resistance value connects+5V the interface of external power source interface circuit, one end of the other end contact resistance R4 of adjustable resistance RP1 fixed resistance value, the other end of resistance R4 connects No. 15 pins of flip-flop chip U3, the adjustment pin of adjustable resistance RP1 connects the+5V interface of external power source interface circuit.
5. micro semiconductor laser device pulse modulation drive circuit according to claim 4, it is characterized in that, described high-speed pulse amplifying circuit comprises charge reversal circuit, amplifying circuit, range-adjusting circuit, metal-oxide-semiconductor drive circuit and match circuit, wherein:
Charge reversal circuit comprises electric capacity C1, electric capacity C2 and charge reversal chip U1, wherein, No. 2 pins of charge reversal chip U1 connect the positive pole of electric capacity C1, the negative pole of electric capacity C1 connects No. 4 pins of charge reversal chip U1, No. 5 pins of charge reversal chip U1 connect the negative pole of electric capacity C2, the plus earth of electric capacity C2, No. 5 pins of charge reversal chip U1 export-12V voltage, and No. 8 pins of charge reversal chip U1 connect the+12V interface of external power source interface circuit;
Amplifying circuit comprises resistance R2, resistance R6, electric capacity C3 and high speed amplifier chip U4, wherein, ground connection after No. 2 pin series resistance R6 of high speed amplifier chip U4, No. 3 pins of high speed amplifier chip U4 connect the common port of resistance R9 and resistance R10 in pulse shaper, No. 4 pins of high speed amplifier chip U4 connect No. 5 pins of charge reversal chip U4 in charge reversal circuit, No. 6 pins of high speed amplifier chip U4 connect range-adjusting circuit, No. 7 pins of high speed amplifier chip U4 connect the+12V interface of external power source interface circuit, between No. 2 pins being connected in series in high speed amplifier chip U4 after resistance R6 is in parallel with electric capacity C3 and No. 6 pins,
Range-adjusting circuit comprises adjustable resistance RP3, and the two ends of adjustable resistance RP3 fixed resistance value connect No. 6 pins and the ground of amplifying circuit high speed amplifier chip U4 respectively, and the adjustable foot of adjustable resistance RP3 connects metal-oxide-semiconductor drive circuit;
Metal-oxide-semiconductor drive circuit comprises resistance R7, resistance R8, resistance R11, resistance R12, electric capacity C8, electric capacity C9, triode Q1, triode Q3 and metal-oxide-semiconductor Q2, wherein, electric capacity C8 is connected the adjustable foot of adjustable resistance RP3 in range-adjusting circuit with one end after resistance R7 parallel connection, ground connection after other end series resistance R11, triode Q1, the common port of the base stage equal contact resistance R7 and resistance R11 of triode Q3, the collector electrode of triode Q1 connects the+12V interface of external power source interface circuit, the emitter of the emitter connecting triode Q3 of triode Q1, the grounded collector of triode Q3, the emitter of one end connecting triode Q1 after electric capacity C9 is in parallel with resistance R8, the other end connects the grid of metal-oxide-semiconductor Q2, ground connection after the gate series resistance R12 of metal-oxide-semiconductor Q2, the source ground of metal-oxide-semiconductor Q2, the drain electrode matching connection circuit of metal-oxide-semiconductor Q2,
Match circuit comprises resistance R3, diode D2 and electric capacity C4, wherein, after resistance R3, diode D2 and electric capacity C4 parallel connection, one end connecting laser drives main power source to produce circuit outputting drive voltage end, the other end connects the drain electrode of metal-oxide-semiconductor Q2 in metal-oxide-semiconductor drive circuit, connecting laser after another resistance R3, diode D2 and electric capacity C4 parallel connection.
6. micro semiconductor laser device pulse modulation drive circuit according to claim 5, is characterized in that, described laser drives main power source generation circuit to comprise electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, electric capacity C25, resistance R13, resistance R14, resistance R15, resistance R16 and switching power source chip U5, wherein, electric capacity C14, electric capacity C15, electric capacity C16, electric capacity C17, electric capacity C18, the equal one end of electric capacity C19 connects the+7.4V interface of external power source interface circuit, other end ground connection, No. 1 pin of switching power source chip U5, No. 2 pins connect the+7.4V interface of external power source interface circuit, No. 3 pins of switching power source chip U5, No. 5 pins, No. 6 pins and No. 12 pin ground connection, No. 4 pins of one end connecting valve power supply chip U5 after resistance R13 and resistance R14 connects, other end ground connection, resistance R13 is connected the+5V interface of external power source interface circuit with the common port of resistance R14, No. 7 pin contact resistance R15 of switching power source chip U5 and the common port of resistance R16, ground connection after No. 8 pin series capacitance C20 of switching power source chip U5, electric capacity C21, electric capacity C22, electric capacity C23, electric capacity C24, No. 10 pins of electric capacity C25 equal one end connecting valve power supply chip U5, No. 11 pins and outputting drive voltage end, other end ground connection, after resistance R15 connects with resistance R16, one end is connected outputting drive voltage end, other end ground connection.
7. micro semiconductor laser device pulse modulation drive circuit according to claim 6, is characterized in that, described triode Q1 adopts NPN type triode, and described triode Q3 adopts PNP type triode.
8. micro semiconductor laser device pulse modulation drive circuit according to claim 7, is characterized in that, described flip-flop chip U3 model is 74HC244.
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