CN104820768B - A kind of schottky barrier height computational methods based on least square method - Google Patents
A kind of schottky barrier height computational methods based on least square method Download PDFInfo
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- CN104820768B CN104820768B CN201410773565.3A CN201410773565A CN104820768B CN 104820768 B CN104820768 B CN 104820768B CN 201410773565 A CN201410773565 A CN 201410773565A CN 104820768 B CN104820768 B CN 104820768B
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Abstract
The present invention discloses a kind of schottky barrier height computational methods based on least square method, it is characterised in that the computational methods include following key step：The temperature T obtained in being tested using I V1Under experimental data, to fowler formula carry out first time nonlinear curve least square method data be fitted；In obtained fitting parameter generation, is returned into fowler formula, T is obtained1At a temperature of heat emission electric current IS(T1)；Using the heat emission electric current at multiple temperature, second of nonlinear curve least square method data is carried out to the Du Shiman formula of Richard one and is fitted.Schottky barrier height is calculated according to the parameter that fitting is obtained.
Description
Technical field
The present invention relates to a kind of schottky barrier height computational methods based on least square method, belong to Semiconductor Physics neck
Domain.
Background technology
Schottky barrier height φBIt is the important parameter of heterojunction material, so people are attempting accurately all the time
Ground obtains the schottky barrier height of various hetero-junctions.Obtaining the common method of schottky barrier height has two kinds, one is logical
The interior photoelectric current yield of hetero-junctions and the Relation acquisition of incident light energy are crossed, although this method, which gives, is insensitive to temperature
Intrinsic Schottky barrier height φB, but be due to that up to the present also accurate description is not different in sufficiently wide scope of experiment
The interior photoelectric current yield of matter knot therefore can not obtain reliability with the expression formula of incident optical energy magnitude relation using interior photocurrent method
Compare high schottky barrier height φB.Another acquisition schottky barrier height φBMethod be measurement different temperatures when it is different
The electric current I of matter knot goes to obtain schottky barrier height φ with voltage V delta data then according to existing I-V functionsB.Can
The current-voltage relation being built upon in series resistance model is present in implicit function form, and such I-V relations are actually
It is difficult to test the data obtained.
The content of the invention
A kind of schottky barrier height computational methods based on least square method, it is characterised in that the computational methods include with
Lower step：
1) according to fowler formula, when the energy that the electronics with certain temperature absorbs from electric field is higher than intrinsic Xiao of hetero-junctions
During special base barrier height, electric current can be write as with the relation of voltage：
Wherein, A is constant；E is electron charge；E χ are the work function of metal；eχ0For the work function of closely metal；k
For Boltzmann constant；T is absolute temperature；Order,p2=χ0；p3=χ；Obtain：
2) the temperature T obtained in being tested using I-V1Under experimental data, to step 1) in obtained formula carry out first
Secondary nonlinear curve least square method data fitting, each fitting parameter p that can be optimized1, p2, p3, p4；
3) by step 2) in obtained fitting parameter p1, p2, p3, p4In generation, returns to step 1) in obtained formula, with season formula
In V=0, obtained electric current as T1At a temperature of heat emission electric current IS(T1)；
4) above-mentioned work is repeated, the I-V experimental datas at N number of temperature are fitted, N group fitting parameters can be obtained,
The heat emission electric current at N number of temperature, i.e. I can be obtainedS(T1), IS(T2) ... IS(TN)；
5) using Richard's-Du Shiman formula as fowler formula first approximation,
Wherein, φBFor schottky barrier height；Order, p5=AA*；Obtain：
6) utilize step 4) in fitting result IS(T1), IS(T2) ... IS(TN), to step 5) in obtained formula enter
Second of nonlinear curve least square method data fitting of row, can obtain fitting parameter P5, P6；
7) schottky barrier height of hetero-junctions is calculated
Brief description of the drawings
Accompanying drawing is a kind of calculation flow chart of the schottky barrier height computational methods based on least square method.
Embodiment
The present embodiment is by taking hetero-junctions Al/p-CdTe as an example.
Using fowler formula to hetero-junctions Al/p-CdTe at five temperature such as 298K, 313K, 331K, 348K, 368K
Experimental data is fitted, and fitting result is as shown in the table：
According to step 3) to step 6), Al/p-CdTe thermocurrent formula isMeter
Calculate schottky barrier height
Claims (1)
1. a kind of schottky barrier height computational methods based on least square method, it is characterised in that the computational methods include following
Step：
1) according to fowler formula, when the energy that the electronics with certain temperature absorbs from electric field is higher than the intrinsic Schottky of hetero-junctions
During barrier height, electric current can be write as with the relation of voltage：
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Wherein, A is constant；E is electron charge；E χ are the work function of metal；eχ0For the work function of closely metal；K is glass
The graceful constant of Wurz；T is absolute temperature；Order,p2=χ0；p3=χ；Obtain：
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2) the temperature T obtained in being tested using I-V1Under experimental data, to step 1) in obtained formula carry out first time non-thread
Linearity curve least square method data are fitted, each fitting parameter p that can be optimized1, p2, p3, p4；
3) by step 2) in obtained fitting parameter p1, p2, p3, p4In generation, returns to step 1) in obtained formula, with the V in season formula
=0, obtained electric current as T1At a temperature of heat emission electric current IS(T1)；
4) above-mentioned work is repeated, the I-V experimental datas at N number of temperature are fitted, N group fitting parameters can be obtained, can be with
Obtain the heat emission electric current at N number of temperature, i.e. IS(T1), IS(T2) ... IS(TN)；
5) using Richard's-Du Shiman formula as fowler formula first approximation,
Wherein, φBFor schottky barrier height；Order, p5=AA*；Obtain：
6) utilize step 4) in fitting result IS(T1), IS(T2) ... IS(TN), to step 5) in obtained formula carry out the
Quadratic nonlinearity curve least square method data are fitted, and can obtain fitting parameter P5, P6；
7) schottky barrier height of hetero-junctions is calculated
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| CN101246902A (en) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN heterojunction enhancement type high electron mobility transistor structure and production method thereof |
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| CN101246902A (en) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN heterojunction enhancement type high electron mobility transistor structure and production method thereof |
Non-Patent Citations (2)
| Title |
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| Characterization of the field emission properties of individual thin carbon nanotubes;De Jonge Niels et al;《Applied Physics Letters》;20040830;第85卷(第9期);第1607-1608页 * |
| The analysis of photoelectric sensitivity curves for clean metals at various temperatures;Fowler R H;《Physical Review》;19310701;第38卷(第1期);第45-56页 * |
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