CN104816084A - Device and method used for processing laser - Google Patents

Device and method used for processing laser Download PDF

Info

Publication number
CN104816084A
CN104816084A CN201510058893.XA CN201510058893A CN104816084A CN 104816084 A CN104816084 A CN 104816084A CN 201510058893 A CN201510058893 A CN 201510058893A CN 104816084 A CN104816084 A CN 104816084A
Authority
CN
China
Prior art keywords
platform
laser
laser irradiator
oscillating impulse
cycle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510058893.XA
Other languages
Chinese (zh)
Inventor
罗玉钧
李成龙
朴种珍
沈亨基
裵想贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AP Systems Inc
AP Cells Inc
Original Assignee
AP Cells Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AP Cells Inc filed Critical AP Cells Inc
Publication of CN104816084A publication Critical patent/CN104816084A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention provides a device and a method used for processing laser, and concretely provides a laser processing device and method used for driving a laser irradiator to irradiate laser on a substrate. The device comprises a relative movement detection component outputting a detection signal when movement of a platform or a laser irradiator is detected, a relative movement module driving component receiving the detection signal from the relative movement detection component and calculating the movement speed of the platform or the laser irradiator and a vibration pulse generation component receiving the movement speed of the platform or the laser irradiator from the relative movement module driving component, generating a vibration pulse corresponding to the cycle of the movement speed of the platform or the laser irradiator and providing the generated vibration pulse to the laser irradiator. Thus laser is employed to carry out laser processing of a related substrate, the processing quality of the substrate can be improved.

Description

For the treatment of equipment and the method for laser
Technical field
The present invention relates to a kind of equipment for the treatment of laser and method, and more particularly, relate to a kind of for driving laser irradiator for by laser irradiation to the laser processing apparatus on substrate and method.
Background technology
When performing annealing after thin film deposition is in large-sized substrate, be difficult to the uniformity guaranteed on substrate.Therefore, just advising various replacement scheme, one of them is the method for annealing using laser.
Fig. 1 is the schematic diagram for explaining the laser thermal processing apparatus according to prior art.Referring to Fig. 1, quartz window 20 is placed in the top surface of reative cell 10, and laser irradiator 40 is placed in above quartz window 20.The laser 41 exported from laser irradiator 40 through quartz window 20 and irradiation on substrate W (wafer such as, in reative cell 10).
Fig. 2 (a) and Fig. 2 (b) is the view for explaining the laser 41 or laser beam used in FIG, and Fig. 2 (a) is the view of the substrate when inspecting from top, and the perspective view that Fig. 2 (b) is substrate.Referring to Fig. 2 (a) and Fig. 2 (b), in laser vertical in substrate or the state that tilts a little relative to substrate, laser 41 presses the linear irradiation of heavy curtain shape.Substrate W moves horizontally, to allow laser 41 irradiation on the whole surface of substrate W on the surface perpendicular to laser 41 or the direction that tilts a little relative to the surface of laser 41.Herein, by the movement of platform by laser irradiation on whole surface.
When must in fact irradiation laser launch time, the pulse (external pulse) allowing Laser emission to carry out vibrating is provided from external device (ED).Herein, Laser emission represents that laser is through vibrating and the moment of irradiation.Such as, can launch for each rising time irradiation laser of oscillating impulse.Therefore, the cycle of oscillating impulse reduces more, and so the cycle of Laser emission reduces more.On the contrary, the cycle of oscillating impulse increases more, and so the cycle of Laser emission increases more.
But in existing laser processing apparatus, no matter the translational speed of platform how, all press constant cycle execution Laser emission.
In detail, when being loaded into by substrate on the platform in chamber and perform laser treatment to substrate, substrate platen moves.Such as, illustrated by Fig. 3 (a), when substrate platen moves at the beginning, substrate platen is accelerated until predetermined speed, and when substrate platen reaches predetermined speed, substrate platen is maintained constant speed.Then, when hope stops substrate platen, substrate platen is slowed down, until stop.
Although the translational speed of substrate changes according to the change of time (as illustrated in Fig. 3 (b)), because oscillating impulse has the constant cycle, therefore Laser emission also can have the constant cycle, has nothing to do with the translational speed of platform.Similarly, when Laser emission has the constant cycle and has nothing to do with the translational speed of platform, the object of laser treatment can have uneven quality.Such as, when press constant oscillation pulse perform Laser emission time, can by a small amount of laser irradiation on substrate platform accelerate section in, and can by a large amount of laser irradiation on substrate platform slow down section in.Therefore, be difficult to ensure good substrate quality.
[prior art file]
No. 10-2011-0070265th, (patent document 1) Korean Patent publication
Summary of the invention
The invention provides a kind of equipment for the treatment of laser and method, when performing the laser treatment about substrate by use laser, it improves substrate processing quality.The present invention also provides a kind of for considering that other ambient conditions are to process the equipment of laser when irradiation laser.
According to one exemplary embodiment, a kind of equipment for the treatment of laser comprises: relative movement detection part, and it is through arranging with the output detections signal when platform or laser irradiator mobile being detected; Opposed moving mold driver part, it is through arranging to receive detection signal with the translational speed of computing platform or laser irradiator from relative movement detection part; With oscillating impulse generating unit, its through arrange with from the translational speed of opposed moving mold driver part receiving platform or laser irradiator to produce the oscillating impulse in the cycle of the translational speed had corresponding to platform or laser irradiator, thus the oscillating impulse of generation is provided to laser irradiator.
Opposed moving mold driver part can comprise platform movement detection part, it is through arranging with all output detections signal whenever platform mobile being detected, wherein platform movement detection part can comprise: platform scale, and wherein scale mark is on the position of the side of object platform; And encoder, with all output detections signal whenever the scale of platform scale being detected on its described side being placed in platform.
Detection signal can comprise interchange (alternating-current; AC) ripple.
Can be driving laser irradiator in the external schema received from the outside at the oscillating impulse in the cycle determining laser generation.
When platform movement, oscillating impulse generating unit can determine the cycle of the oscillating impulse proportional with the translational speed of platform, or when laser irradiator moves, oscillating impulse generating unit can determine the cycle of the oscillating impulse proportional with the translational speed of laser irradiator.
In laser irradiator or platform in the section by acceleration movement, the cycle of oscillating impulse can increase gradually, in laser irradiator or platform in the section by constant speed movement, can oscillating impulse be maintained in the constant cycle, and in laser irradiator or platform in the section by deceleration movement, the cycle of oscillating impulse can reduce gradually.
Oscillating impulse generating unit can have the detection signal of AC waveform to produce the oscillating impulse with square-wave waveform from AC ripple from the reception of relative movement detection part.
Rise time of oscillating impulse, crest voltage and pulse length can be determined by the ardware feature of laser irradiator.
According to another one exemplary embodiment, a kind of method processing laser comprises: when laser irradiator or platform mobile being detected, output detections signal; When laser irradiator mobile being detected, calculate the translational speed of laser irradiator, and when platform mobile being detected, the translational speed of computing platform; With the oscillating impulse in cycle producing the translational speed had corresponding to laser irradiator or platform, so that the oscillating impulse of generation is provided to laser irradiator.
The cycle of the oscillating impulse proportional with the translational speed of laser irradiator or platform can be determined.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings can understand exemplary embodiment in more detail, wherein:
Fig. 1 is the schematic diagram for explaining the laser thermal processing apparatus according to prior art.
Fig. 2 (a) and Fig. 2 (b) is the view of the laser for key-drawing 1.
Fig. 3 (a) and Fig. 3 (b) illustrates that the translational speed with platform independently produces the view of the state of constant oscillation pulse.
Fig. 4 is the block diagram of the laser processing apparatus according to one exemplary embodiment.
Fig. 5 (a) and Fig. 5 (b) is the view of platform scale according to one exemplary embodiment and encoder.
Fig. 6 (a) and Fig. 6 (b) illustrates that the translational speed according to platform according to one exemplary embodiment changes the view of the state of oscillating impulse.
Fig. 7 illustrates the flow chart of the laser treatment process according to one exemplary embodiment.
Detailed description of the invention
Hereafter, specific embodiment will be described in detail referring to accompanying drawing.But the present invention can embody in different forms, and the embodiment illustrated by should not being construed as limited to herein.On the contrary, provide these embodiments to make content of the present invention by thorough and complete, and will fully pass on the scope of content of the present invention to those skilled in the art.Identical reference numbers runs through and refers to similar components in full.
Hereafter, although illustrate substrate supports to process the laser processing apparatus of substrate in substrate platen and in laser irradiation to substrate, the laser irradiating method being applied to laser processing apparatus can be applicable to all various equipment that can utilize laser irradiating method.Such as, laser irradiating method can be applicable to substrate-treating apparatus, laser annealing apparatus and laser thermal processing apparatus is apparent.
Fig. 4 is the block diagram of the laser processing apparatus according to one exemplary embodiment.
Laser irradiator 100 is for vibrating and the device of Output of laser.To vibrate and the laser exported can from the reflection of speculum (not shown) and towards the surface irradiation of the substrate chamber from laser irradiator 100.Laser irradiator 100 can be the well-known devices for generation of laser., various types of laser can be adopted herein, such as, KrF PRK, ArF PRK (depending on the wavelength of laser beam).Such as, gas laser (such as, Ar laser, Kr laser, PRK etc.), use and add one or more in Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta to monocrystalline YAG, YVO 4, forsterite (Mg 2siO 4), YAlO 3, GdVO 4or polycrystalline (pottery) YAG, Y 2o 3, YVO 4, YAlO 3, GdVO 4the source of laser irradiator 100 is can be used as one or more in the laser of the medium of adulterant and glass laser, ruby laser, alexandrite laser, titanium sapphire laser, copper vapor laser and gold vapor laser.
Laser irradiator 100 can operate in internal schema or external schema.When laser irradiator 100 operates in internal schema, laser irradiator 100 self produces square pulse, not received pulse from the outside, is used as oscillating impulse, is excited thus in pre-hot stand-by duty with the square pulse that will produce.In pre-hot stand-by duty, in fact not irradiation laser, but by the inner sustain of laser irradiator 100 in laser generation atmosphere.When laser irradiator 100 must to be maintained before irradiation laser actually in pre-hot stand-by duty and then laser irradiator 100 irradiation laser time, the laser of good quality can be had by irradiation.
When laser irradiator 100 operates in external schema, laser irradiator 100 receives the operating impulse with square-wave waveform from the outside, is used as oscillating impulse with the operating impulse that will receive, and launches thus according to the cycle irradiation laser of oscillating impulse.Herein, Laser emission represents laser generation and through moment of irradiation.Such as, Laser emission can be produced at each rising time of oscillating impulse.Therefore, the cycle of oscillating impulse reduces more, and so the cycle of Laser emission reduces more.On the contrary, the cycle of oscillating impulse increases more, and so the cycle of Laser emission increases more.
In an exemplary embodiment, when when driving laser in the external schema of the oscillating impulse in the cycle of laser generation is determined in reception from the outside, oscillating impulse produces outside and then provides from the outside.Herein, in an exemplary embodiment, when providing oscillating impulse, consider substrate be located the translational speed of platform thereon or the translational speed of laser irradiator to determine the cycle, to produce and to provide oscillating impulse.
Hereafter, in an exemplary embodiment, when laser is through the laser irradiator of vibration with when moving at least one in the platform of a Brace substrate, that is, when there is the relative movement between laser irradiator and platform, operating impulse can be provided in laser.Opposed moving mold driver part can comprise the table drive part part 400 for driving platform, and for the laser irradiator driver part (not shown) of driving laser irradiator.Equally, relative movement detection part can the movement of at least one in detection platform and laser irradiator with output detections signal.Relative movement detection part can comprise the laser irradiator mobility detect parts (not shown) of the platform movement detection part 300 for the movement of detection platform and the movement for detection laser irradiator.
Hereafter, the situation of the movement of relative movement detection part detection platform will exemplarily be described.Therefore, in the examples below, such as, when platform movement, opposed moving mold driver part will be described to the table drive part part 400 of Fig. 4, and relative movement detection part will be described to the platform movement detection part 300 of Fig. 4.
But, when laser irradiator moves, it can be applied similarly, and such as, opposed moving mold driver part can be embodied as laser irradiator driver part (not shown), and relative movement detection part can be embodied as laser mobility detect parts (not shown).
Laser processing apparatus in the embodiment of platform movement comprises platform movement detection part 300, table drive part part 400 and oscillating impulse generating unit 200.
Platform movement detection part 300 can when platform movement being detected output detections signal, so that the detection signal of output is provided to table drive part part 400 and oscillating impulse generating unit 200.Detection signal can have interchange (alternating-current; AC) waveform, such as, sinusoidal wave or cosine wave.Illustrated by Fig. 5 (a) and Fig. 5 (b), platform movement detection part 300 comprises: platform scale 310, and wherein scale mark is on the position of the side of object platform; With encoder 320, all to export AC ripple whenever the scale of platform scale 310 being detected on its described side being placed in platform.
Platform scale 310 is formed by glass material, and mark is used to indicate the scale of length thereon.Be placed at least one encoder 320 on platform and whenever platform movement, to the scale of its platform scale 310, and detection signal can be produced detection signal to be provided to platform movement detection part 300 and platform driver part 400 whenever reading scale by reading face.When encoder 320 passes through the scale of the mobile reading platform scale 310 of platform, the AC ripple of encoder 320 all exportable such as sine wave or cosine wave.Therefore, if export AC ripple from platform movement detection part 300, so platform movement can be understood.
Table drive part part 400 can receive detection signal with the translational speed of computing platform from platform movement detection part 300.Table drive part part 400 can according at least one in the translational speed of the AC ripple computing platform of the detection signal for inputting from platform movement detection part 300 and position.Such as, when platform is by using motor 500 to move, table drive part part 400 can read the position of scale with computing platform of platform scale 310, thus mobile platform in a segment distance on demand.Such as, illustrated by Fig. 5 (a), when hope allow to be placed in the platform on the position being read as ' 0 ' unit scales on the length direction (+Y-direction) of platform scale 310, move to the position of ' 10 ' unit scales time, table drive part part 400 mobile platform, until input ten detection signals.Herein, when when platform movement, table drive part part 400 receives ten detection signals from platform movement detection part 300, table drive part part 400 stops the movement of platform.Therefore, illustrated by Fig. 5 (b), platform movement is to the position of ' 10 ' unit scales.Herein, above-mentioned ' unit scales ' represents the scale unit be marked on platform scale 310, and such as μm, the various units of mm, cm etc. can be unit scales.
Equally, by determining that speed that the scale of platform scale 310 is read by encoder 320 carrys out the translational speed of computing platform.Such as, assuming that the unit scale of platform scale 310 is 1cm, and scale is read ten times by each second, so can understand, in one second, and a segment distance of platform movement roughly 10cm.Therefore, can as shown in the formula the translational speed of computing platform: " speed=distance/time "; 10 centimetres of ÷ 1 second=10 [cel].
The oscillating impulse of generation from the translational speed of table drive part part 400 receiving platform to produce the oscillating impulse in the cycle of the translational speed had corresponding to platform, can be provided to laser irradiator by oscillating impulse generating unit 200 thus.
Although the translational speed of substrate changes according to the change of time (as illustrated in Fig. 3 (b)), when oscillating impulse has the constant cycle, laser processing quality worsens.In order to solve described restriction, oscillating impulse generating unit 200 can determine the cycle of the oscillating impulse proportional with the translational speed of platform.
Illustrated by Fig. 6 (a), when substrate platen moves at the beginning, substrate platen is accelerated until predetermined speed, and when substrate platen reaches predetermined speed, substrate platen is maintained constant speed.Then, when hope stops substrate platen, substrate platen is slowed down, until stop.
The cycle of the oscillating impulse proportional with the translational speed of platform (such as, the acceleration of platform, constant speed and deceleration) can be determined.Such as, illustrated by Fig. 6 (b), the cycle of oscillating impulse increases by the region of acceleration movement gradually at platform, and in the section of platform by constant speed movement, the cycle of oscillating impulse is constant.Equally, in the section of platform by deceleration movement, the cycle of oscillating impulse reduces gradually.
Equally, illustrated by Fig. 6 (b), oscillating impulse generating unit 200 produces square-wave pulse.Herein, by using the detection signal with AC waveform received from platform movement detection part 300 to produce square-wave pulse.That is, after the AC ripple by receiving from platform movement detection part 300 is used as source signal execution frequency conversion, produce the oscillating impulse with square-wave waveform, described square-wave waveform has predetermined rise time, crest voltage and pulse length.
Rise time of oscillating impulse, crest voltage and length can be determined by the ardware feature of laser irradiator.Such as, by using the ardware feature of the laser irradiator of the gas component of such as KrF PRK and ArF PRK to determine rise time of oscillating impulse, crest voltage and length.
Fig. 7 illustrates the flow chart of the laser treatment process according to one exemplary embodiment.
First, in operation S710, the movement of detection platform.As illustrated in Figure 4, by using platform scale 310 on the position of the side of object platform of wherein scale mark and being placed in encoder 320 on the described side of platform to carry out detection platform movement with the AC ripple all exported whenever the scale of platform scale 310 being detected as detection signal.
When platform movement, whenever at least one encoder 320 reading face be placed on platform all produces detection signal to during the scale of its platform scale 310.That is, whenever encoder 320 is by the scale of the mobile reading platform scale 310 of platform, the AC ripple of encoder 320 all exportable such as sine wave or cosine wave.Therefore, if export AC ripple from encoder 320, so platform movement can be understood.
Then, in operation S720, detection signal is received with the translational speed of computing platform.Equally, by determining that speed that the scale of platform scale 310 is read by encoder 320 carrys out the translational speed of computing platform.Such as, assuming that the unit scale of platform scale 310 is 1cm, and scale is read ten times by each second, so can understand, in one second, and a segment distance of platform movement roughly 10cm.Therefore, can as shown in the formula the translational speed of computing platform: " speed=distance/time "; 10 centimetres of ÷ 1 second=10 [cel].
Then, in operation S730, produce the oscillating impulse in the cycle of the translational speed of the calculating had corresponding to platform and be provided in laser irradiator.
That is, the cycle of the oscillating impulse proportional with the translational speed of platform (such as, the acceleration of platform, constant speed and deceleration) can be determined.Such as, illustrated by Fig. 6 (b), in the section (acceleration area) of platform by acceleration movement, the cycle of oscillating impulse increases gradually, and in the section (constant speed section) of platform by constant speed movement, the constant period of oscillating impulse.Equally, in the section (deceleration area) of platform by deceleration movement, the cycle of oscillating impulse reduces gradually.
The oscillating impulse produced produces by using the detection signal with AC waveform.That is, after the AC ripple by receiving from platform movement detection part 300 is used as source signal execution frequency conversion, produce the oscillating impulse with square-wave waveform, described square-wave waveform has predetermined rise time, crest voltage and pulse length.
According to one exemplary embodiment, can consider that the translational speed of platform or laser irradiator is to determine the irradiation cycle of laser, to improve the quality of the substrate performing laser treatment.Equally, according to one exemplary embodiment, can the laser activity in the section that slows down of platform improving or laser irradiator worsen.
Although describe for the treatment of the equipment of laser and method with reference to specific embodiment, it is not limited thereto.Therefore, those skilled in the art will readily appreciate that, when not departing from spirit of the present invention, can carry out various amendment and change to it.

Claims (12)

1. for the treatment of an equipment for laser, it is characterized in that, comprising:
Relative movement detection part, it is through arranging with the output detections signal when platform or laser irradiator mobile being detected;
Opposed moving mold driver part, it is through arranging to receive described detection signal to calculate the translational speed of described platform or described laser irradiator from described relative movement detection part; And
Oscillating impulse generating unit, it is through arranging with the described translational speed receiving described platform or described laser irradiator from described opposed moving mold driver part, to produce the oscillating impulse in the cycle of the described translational speed had corresponding to described platform or described laser irradiator, thus the described oscillating impulse produced is provided to described laser irradiator.
2. equipment according to claim 1, is characterized in that, described opposed moving mold driver part comprises platform movement detection part, described platform movement detection part through arranging with all output detections signal whenever described platform described mobile being detected,
Wherein said platform movement detection part comprises:
Platform scale, wherein scale mark is on the position of the side towards described platform; And
Encoder, all to export described detection signal whenever the described scale of described platform scale being detected on its described side being placed in described platform.
3. equipment according to claim 2, is characterized in that, described detection signal comprises waves AC.
4. equipment according to claim 1, is characterized in that, described laser irradiator receives from the outside to determine to be driven in the external schema of the described oscillating impulse in the cycle of described laser generation.
5. equipment according to claim 1, it is characterized in that, when described platform movement, described oscillating impulse generating unit determines the cycle of the described oscillating impulse proportional with the described translational speed of described platform, or when described laser irradiator moves, described oscillating impulse generating unit determines the cycle of the described oscillating impulse proportional with the described translational speed of described laser irradiator.
6. equipment according to claim 5, is characterized in that, in described laser irradiator or described platform in the section by acceleration movement, the cycle of described oscillating impulse increases gradually,
In described laser irradiator or described platform in the section by constant speed movement, described oscillating impulse was maintained in the constant cycle, and
In described laser irradiator or described platform in the section by deceleration movement, the cycle of described oscillating impulse reduces gradually.
7. equipment according to claim 1, is characterized in that, described oscillating impulse generating unit receives the detection signal with AC wave shape from described relative movement detection part, to produce the described oscillating impulse with square-wave waveform from described waves AC.
8. equipment according to claim 7, is characterized in that, rise time of described oscillating impulse, crest voltage and pulse length are determined by the ardware feature of described laser irradiator.
9. process a method for laser, it is characterized in that, comprising:
When laser irradiator or platform mobile being detected, output detections signal;
When described laser irradiator described mobile being detected, calculate the translational speed of described laser irradiator, and when described platform described mobile being detected, calculate the translational speed of described platform; And
Produce the oscillating impulse in the cycle of the described translational speed had corresponding to described laser irradiator or described platform so that the described oscillating impulse produced is provided to described laser irradiator.
10. method according to claim 9, is characterized in that, described detection signal has waves AC, and
The described oscillating impulse with square-wave waveform is produced from described waves AC.
11. methods according to claim 9, is characterized in that, determine the described cycle of the described oscillating impulse proportional with the described translational speed of described laser irradiator or described platform.
12. methods according to claim 11, is characterized in that, in described laser irradiator or described platform in the section by acceleration movement, the cycle of described oscillating impulse increases gradually,
In described laser irradiator or described platform in the section by constant speed movement, described oscillating impulse was maintained in the constant cycle, and
In described laser irradiator or described platform in the section by deceleration movement, the cycle of described oscillating impulse reduces gradually.
CN201510058893.XA 2014-02-05 2015-02-04 Device and method used for processing laser Pending CN104816084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140013153A KR20150092600A (en) 2014-02-05 2014-02-05 Apparatus for laser processing and method for operating the same
KR10-2014-0013153 2014-02-05

Publications (1)

Publication Number Publication Date
CN104816084A true CN104816084A (en) 2015-08-05

Family

ID=53726688

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510058893.XA Pending CN104816084A (en) 2014-02-05 2015-02-04 Device and method used for processing laser

Country Status (3)

Country Link
KR (1) KR20150092600A (en)
CN (1) CN104816084A (en)
TW (1) TW201531360A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102409486B1 (en) * 2020-04-21 2022-06-16 (주)하드램 Micro LED manufacturing apparatus
CN113941783B (en) * 2021-11-23 2023-11-21 深圳软动智能控制有限公司 Laser axis frog-leaping realization method, device, laser equipment and storage medium

Also Published As

Publication number Publication date
KR20150092600A (en) 2015-08-13
TW201531360A (en) 2015-08-16

Similar Documents

Publication Publication Date Title
CN101844275B (en) Method of cutting substrate
US9012806B2 (en) Pulse laser processing device
JP5484024B2 (en) Elastic wave receiving apparatus, elastic wave receiving method, photoacoustic apparatus, and program
JP2013144635A (en) Apparatus and method having profiling control and for forming scribed line on hard brittle plate
WO2014119740A1 (en) Substrate transport device
CN102990223B (en) Laser processing device
JP5622973B1 (en) Processing control device, laser processing device, and processing control method
CN104816084A (en) Device and method used for processing laser
JP2021118206A (en) Wafer generation method and wafer generation device
JP2016055308A (en) Processing system containing galvano-scanner capable of scanning laser beam at high speed
CN104816085A (en) Apparatus for processing laser
TW201805099A (en) Laser processing apparatus and wafer producing method
TW201420244A (en) Laser machining device and laser machining method
KR20170121944A (en) Laser processing apparatus and the method for laser processing by using it
KR20210095792A (en) Wafer machining method and machining apparatus
CN107363422B (en) Laser processing apparatus
CN103406664B (en) Laser machining device
JP3889668B2 (en) Stereolithography equipment and recoater
KR20110001783A (en) Method and apparatus for scribing substrate
KR100951782B1 (en) Pattern forming device and pattern forming method
KR101164191B1 (en) Appraratus for manufacturing pattern on a light guide plate
KR101012966B1 (en) Substrate transport apparatus, coating apparatus, method of transporting substrate and method of coating
CN103413757B (en) Laser machining device and control method thereof
JP2005238409A (en) Suction adjusting method and device of cutter
JP6889922B2 (en) Residual stress reduction method for glass substrate and residual stress reduction device for glass substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150805