CN104810575A - Terahertz tuning device based on graphene - Google Patents
Terahertz tuning device based on graphene Download PDFInfo
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- CN104810575A CN104810575A CN201510175224.0A CN201510175224A CN104810575A CN 104810575 A CN104810575 A CN 104810575A CN 201510175224 A CN201510175224 A CN 201510175224A CN 104810575 A CN104810575 A CN 104810575A
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Abstract
The invention relates to a terahertz tuning device based on graphene and aims to solve problems of single tuning frequency and small tuning depth in terms of existing terahertz metamaterial tuning devices. The terahertz tuning device based on the graphene comprises a substrate, an insulating medium layer and a split resonant ring structured graphene layer, the substrate is horizontally arranged on a lowest layer, the insulating medium layer is parallelly disposed on the upper surface of the substrate, and the split resonant ring structured graphene layer is parallelly disposed in the middle of the upper surface of the insulating medium layer. The terahertz tuning device based on the graphene is used for the field of terahertz communication.
Description
Technical field
The present invention relates to a kind of Terahertz tuning device based on Graphene.
Background technology
In recent years, artificial electromagnetic material (Metamaterials) achieves breakthrough in Terahertz function element, but the device of artificial electromagnetic material can only to be modulated the THz wave of single-frequency and modulation depth is less due to limitation device of material.Graphene can be regulated by extra electric field as its Fermi level of excellent conductor material, and the difference of Fermi's energy result in dielectric constant and changes, and this makes artificial electromagnetic material device carry out modulation to the Terahertz of multiband becomes possibility.
Summary of the invention
There is to solve existing Terahertz Meta Materials tuner the problem that tuned frequency is single, tune depth is less in the present invention, and provides a kind of Terahertz tuning device based on Graphene.
A kind of Terahertz tuning device based on Graphene of the present invention is made up of substrate, insulating medium layer and opening resonance loop structure graphene layer, described substrate level is arranged on orlop, described insulating medium layer be arranged in parallel on the upper surface of the substrate, and described opening resonance loop structure graphene layer is set in parallel in the centre position of the upper surface of insulating medium layer; The upper surface of described opening resonance loop structure graphene layer is identical with underside shape, the thickness of described opening resonance loop structure graphene layer is 0.34 μm, and the upper surface of described opening resonance loop structure graphene layer is by top, center pillar, below, the first opening edge, the second opening edge, the 3rd opening edge, the 4th opening edge, first protruding, second protruding, the 3rd protruding and the 4th projection form; Described center pillar is vertically set on the centre position of bottom and upper segment; Described second opening edge vertically and be upwards arranged on following left end; Described 4th opening edge vertically and be upwards arranged on following right-hand member; Described first opening edge is vertically set on below top, and symmetrical with the second opening edge; Described 3rd opening edge is vertically set on below top, and symmetrical with the 4th opening edge; Described first projection is arranged on outside the bottom of the first opening edge, and the second projection is arranged on outside the upper end of the second opening edge, and the 3rd projection is arranged on outside the bottom of the 3rd opening edge, and the 4th projection is arranged on outside the upper end of the 4th opening edge.
Beneficial effect of the present invention:
Resonant ring structure of the present invention is made up of Graphene, and the Fermi of Graphene can be able to be controlled by applied voltage; And traditional resonant ring structure is metal formation, after selected material, its Fermi can be just immutable.The Fermi of constituent material can have different tuned frequencies variable just meaning.Compared with existing tuner, it can be modulated the THz wave of different frequency and modulation depth is better than existing tuner.Through emulation experiment, it is tuning that the present invention can realize multi-frequency, and the tuning efficiency of each frequency is close to 100%.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the Terahertz tuning device based on Graphene;
Fig. 2 is a kind of perspective view of the Terahertz tuning device based on Graphene;
Fig. 3 is the structural representation of the upper surface of described opening resonance loop structure graphene layer;
Fig. 4 be based on the Terahertz tuning device of Graphene when the Fermi level that opening resonance loop structure graphene layer is different its to the tuned frequency spectrogram of THz wave, wherein 1 for Fermi can be 0.2eV, 2 for Fermi can be 0.3eV, 3 for Fermi can be 0.4eV, 4 for Fermi can be 0.5eV.
Embodiment
Embodiment one: as shown in Figure 1, Figure 2 and Figure 3, a kind of Terahertz tuning device based on Graphene of present embodiment is made up of substrate 1, insulating medium layer 2 and opening resonance loop structure graphene layer 3, described substrate 1 is horizontally set on orlop, described insulating medium layer 2 is set in parallel on the upper surface of substrate 1, and described opening resonance loop structure graphene layer 3 is set in parallel in the centre position of the upper surface of insulating medium layer 2; The upper surface of described opening resonance loop structure graphene layer 3 is identical with underside shape, the thickness of described opening resonance loop structure graphene layer 3 is 0.34 μm, and the upper surface of described opening resonance loop structure graphene layer 3 is made up of top 4, center pillar 5, following 6, first opening edge 7, second opening edge 8, the 3rd opening edge 9, the 4th opening edge 10, first projection 11, second projection 12, the the 3rd protruding 13 and the 4th projection 14; Described center pillar 5 is vertically set on the centre position of top 4 and following 6; Described second opening edge 8 vertically and be upwards arranged on following 6 left end; Described 4th opening edge 10 vertically and be upwards arranged on following 6 right-hand member; Described first opening edge 7 is vertically set on below top 4, and symmetrical with the second opening edge 8; Described 3rd opening edge 9 is vertically set on below top 4, and symmetrical with the 4th opening edge 10; Described first projection 11 is arranged on outside the bottom of the first opening edge 7, second projection 12 is arranged on outside the upper end of the second opening edge 8,3rd projection 13 is arranged on outside the bottom of the 3rd opening edge 9, and the 4th projection 14 is arranged on outside the upper end of the 4th opening edge 10.
A kind of Terahertz tuning device surface current based on Graphene of present embodiment is LC loop current.
The resonant ring structure of present embodiment is made up of Graphene, and the Fermi of Graphene can be able to be controlled by applied voltage; And traditional resonant ring structure is metal formation, after selected material, its Fermi can be just immutable.The Fermi of constituent material can have different tuned frequencies variable just meaning.Compared with existing tuner, it can be modulated the THz wave of different frequency and modulation depth is better than existing tuner.Through emulation experiment, it is tuning that the present invention can realize multi-frequency, and the tuning efficiency of each frequency is close to 100%.
Embodiment two: present embodiment and embodiment one are unlike: described substrate 1 for thickness is the square High Resistivity Si plate of 500 μm, and its length of side is 50 μm; The resistivity of described square High Resistivity Si plate is greater than 10000, and dielectric constant is 11.9.Other step is identical with embodiment one with parameter.
Embodiment three: present embodiment and embodiment one or two are unlike: described insulating medium layer 2 to be thickness the be square silica plate of 3 μm, and its length of side is 50 μm; The dielectric constant of described square silica plate is 2.88.Other step is identical with embodiment one or two with parameter.
The loss angle tangent tan (δ)=0.05 of square silica plate described in present embodiment, wherein δ is the loss angle of dielectric 2.
Embodiment four: one of present embodiment and embodiment one to three unlike: the length of described top 4 is 50 μm, and width is 4 μm.Other step is identical with one of parameter and embodiment one to three.
Embodiment five: one of present embodiment and embodiment one to four unlike: the length of described center pillar 5 is 36 μm, and width is 4 μm.Other step is identical with one of parameter and embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five unlike: the described length of following 6 is 36 μm, and width is 4 μm.Other step is identical with one of parameter and embodiment one to five.
Embodiment seven: one of present embodiment and embodiment one to six unlike: the length of described first opening edge 7, second opening edge 8, the 3rd opening edge 9 and the 4th opening edge 10 is 15 μm, and width is 4 μm.Other step is identical with one of parameter and embodiment one to six.
Embodiment eight: one of present embodiment and embodiment one to seven are 4 μm unlike the length of: described first projection 11, second projection 12, the the 3rd protruding 13 and the 4th projection 14, and width is 2 μm.Other step is identical with one of parameter and embodiment one to seven.
Embodiment nine: one of present embodiment and embodiment one to eight unlike: the conductivity of described opening resonance loop structure graphene layer 3 is 4.09 × 10
7s/cm.Other step is identical with one of parameter and embodiment one to eight.
Embodiment ten: one of present embodiment and embodiment one to nine unlike: the Fermi of described opening resonance loop structure graphene layer 3 can be 0.1eV ~ 0.5eV.Other step is identical with one of parameter and embodiment one to nine.
The Fermi of opening resonance loop structure graphene layer 3 described in present embodiment is changed by the applied voltage be applied on opening resonance loop structure graphene layer 3.
Beneficial effect of the present invention is verified by following examples:
Embodiment one: apply applied voltage on the surface of the Terahertz tuning device based on Graphene, makes the Fermi of opening resonance loop structure graphene layer 3 can be 0.2eV, 0.3eV, 0.4eV, 0.5eV, then adopts THz wave to irradiate.
Fig. 4 be based on the Terahertz tuning device of Graphene when the Fermi level that opening resonance loop structure graphene layer is different its to the tuned frequency spectrogram of THz wave, wherein 1 for Fermi can be 0.2eV, 2 for Fermi can be 0.3eV, 3 for Fermi can be 0.4eV, 4 for Fermi can be 0.5eV; Its Fermi's energy is changed, the voltage that each Fermi can be corresponding by applied voltage; The Terahertz transmission spectrum of test sample product can see that device under its different voltage is tuned at different frequencies to tera-hertz spectra.
Claims (10)
1. the Terahertz tuning device based on Graphene, it is characterized in that the Terahertz tuning device based on Graphene is made up of substrate (1), insulating medium layer (2) and opening resonance loop structure graphene layer (3), described substrate (1) is horizontally set on orlop, described insulating medium layer (2) is set in parallel on the upper surface of substrate (1), and described opening resonance loop structure graphene layer (3) is set in parallel in the centre position of the upper surface of insulating medium layer (2); The upper surface of described opening resonance loop structure graphene layer (3) is identical with underside shape, the thickness of described opening resonance loop structure graphene layer (3) is 0.34 μm, and the upper surface of described opening resonance loop structure graphene layer (3) is made up of top (4), center pillar (5), below (6), the first opening edge (7), the second opening edge (8), the 3rd opening edge (9), the 4th opening edge (10), the first projection (11), the second projection (12), the 3rd projection (13) and the 4th projection (14); Described center pillar (5) is vertically set on the centre position of top (4) and following (6); Described second opening edge (8) vertically and be upwards arranged on the left end of below (6); Described 4th opening edge (10) vertically and be upwards arranged on the right-hand member of below (6); Described first opening edge (7) is vertically set on below top (4), and symmetrical with the second opening edge (8); Described 3rd opening edge (9) is vertically set on below top (4), and symmetrical with the 4th opening edge (10); Described first projection (11) is arranged on outside the bottom of the first opening edge (7), second projection (12) is arranged on outside the upper end of the second opening edge (8), 3rd projection (13) is arranged on outside the bottom of the 3rd opening edge (9), and the 4th projection (14) is arranged on outside the upper end of the 4th opening edge (10).
2. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that described substrate (1) for thickness be the square High Resistivity Si plate of 500 μm, its length of side is 50 μm; The resistivity of described square High Resistivity Si plate is greater than 10000, and dielectric constant is 11.9.
3. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that described insulating medium layer (2) to be thickness be the square silica plate of 3 μm, its length of side is 50 μm; The dielectric constant of described square silica plate is 2.88.
4. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that the length of described top (4) is 50 μm, width is 4 μm.
5. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that the length of described center pillar (5) is 36 μm, width is 4 μm.
6. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that the length of described (6) is below 36 μm, width is 4 μm.
7. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that described first opening edge (7), the second opening edge (8), the 3rd opening edge (9) and the 4th opening edge (10) length be 15 μm, width is 4 μm.
8. a kind of Terahertz tuning device based on Graphene according to claim 1, it is characterized in that described first projection (11), the second projection (12), the 3rd projection (13) and the 4th projection (14) length be 4 μm, width is 2 μm.
9. a kind of Terahertz tuning device based on Graphene according to claim 1, is characterized in that the conductivity of described opening resonance loop structure graphene layer (3) is 4.09 × 10
7s/cm.
10. a kind of Terahertz tuning device based on Graphene according to claim 1, is characterized in that the Fermi of described opening resonance loop structure graphene layer (3) can be 0.1eV ~ 0.5eV.
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Cited By (8)
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| CN105338798A (en) * | 2015-11-24 | 2016-02-17 | 黄山学院 | Infrared band adjustable dual-frequency/tri-frequency graphene metamaterial absorption device and application method thereof |
| CN105490029A (en) * | 2015-12-09 | 2016-04-13 | 电子科技大学 | Metamaterial structure capable of achieving selective generation of harmonic waves |
| CN106200013A (en) * | 2016-09-06 | 2016-12-07 | 中国科学院重庆绿色智能技术研究院 | A kind of Terahertz manipulator of Graphene metal composite structure |
| CN108899413A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Graphene TES superconductive device and preparation method thereof |
| WO2019029126A1 (en) * | 2017-08-09 | 2019-02-14 | 深圳市景程信息科技有限公司 | Graphene-based coupler with adjustable broadband power distribution ratio |
| CN111352175A (en) * | 2020-03-10 | 2020-06-30 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
| CN112701490A (en) * | 2020-12-17 | 2021-04-23 | 哈尔滨理工大学 | Dynamically-adjustable multifunctional terahertz metamaterial device based on TiNi shape memory alloy film |
| CN112751214A (en) * | 2021-01-22 | 2021-05-04 | 俞熊斌 | Terahertz transmitter based on split ring resonator |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105338798A (en) * | 2015-11-24 | 2016-02-17 | 黄山学院 | Infrared band adjustable dual-frequency/tri-frequency graphene metamaterial absorption device and application method thereof |
| CN105490029A (en) * | 2015-12-09 | 2016-04-13 | 电子科技大学 | Metamaterial structure capable of achieving selective generation of harmonic waves |
| CN105490029B (en) * | 2015-12-09 | 2018-10-16 | 电子科技大学 | A kind of metamaterial structure that harmonic wave selectively generates |
| CN106200013A (en) * | 2016-09-06 | 2016-12-07 | 中国科学院重庆绿色智能技术研究院 | A kind of Terahertz manipulator of Graphene metal composite structure |
| WO2019029126A1 (en) * | 2017-08-09 | 2019-02-14 | 深圳市景程信息科技有限公司 | Graphene-based coupler with adjustable broadband power distribution ratio |
| CN108899413A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Graphene TES superconductive device and preparation method thereof |
| CN111352175A (en) * | 2020-03-10 | 2020-06-30 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
| CN111352175B (en) * | 2020-03-10 | 2021-04-27 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
| CN112701490A (en) * | 2020-12-17 | 2021-04-23 | 哈尔滨理工大学 | Dynamically-adjustable multifunctional terahertz metamaterial device based on TiNi shape memory alloy film |
| CN112751214A (en) * | 2021-01-22 | 2021-05-04 | 俞熊斌 | Terahertz transmitter based on split ring resonator |
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Application publication date: 20150729 |