CN104810279B - A kind of aluminium lithographic method and device - Google Patents
A kind of aluminium lithographic method and device Download PDFInfo
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- CN104810279B CN104810279B CN201410032415.7A CN201410032415A CN104810279B CN 104810279 B CN104810279 B CN 104810279B CN 201410032415 A CN201410032415 A CN 201410032415A CN 104810279 B CN104810279 B CN 104810279B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The present invention provides a kind of aluminium lithographic method and system, including：There is the aluminium layer of photoresist layer using wet etching；Remaining white residue in the aluminium layer is removed, and dry etching is carried out to the aluminium layer in same intracavitary immediately using dry method.In aluminium lithographic method proposed by the present invention and system, it is removed in aluminium layer after remaining white residue in dry method, it does not stop in intracavitary, dry method aluminium etching is carried out at once, reduce the stand-by period between white residue and dry method aluminium etch step, it absorbs excessive moisture in air so as to avoid power component product, effectively prevents the reaction of the generations such as aluminium and water, fluorine.The aluminium lithographic method of the present invention will not generate on aluminium layer surface and be difficult to the dotted residual etched away, solve the problems, such as thus caused product rejection.
Description
Technical field
The present invention relates to semiconductor chip fabrication process technical field more particularly to a kind of aluminium lithographic methods and device.
Background technology
In semiconductor chip manufacturing process, the metal layer of power component product, mostly using aluminium/silicon (1%)/copper
(0.5%) alloy, thickness are generally 3 microns or 4 microns.Since the size of power component product is larger, aluminium thickness is 3 microns
Power device carry out aluminium etching using Whote-wet method, and because the lateral encroaching of Whote-wet method aluminium etching is excessive, aluminium thickness is 4 microns
Power component product generally uses " wet+dry " aluminium etching.In wet method aluminium etch process flow, corrosive liquid is not corrode silicon
, therefore, after above-mentioned wet method aluminium etching is completed, the white residue in metal layer will left behind.And in " wet+dry " aluminium etching
Technique in, after the corrosion of wet method aluminium, before dry method aluminium etching, then desilication slag must be gone to remove white residue by dry method clean,
Otherwise the dry method aluminium etching process continued thereafter will be influenced whether.
In " wet+dry " aluminium etching technics in the industry, comprising the step of it is as follows：Gu resist coating --- photoetching development ---
--- wet method aluminium etches, and --- dry method goes desilication slag --- to examine --- dry method aluminium etching --- cleaning to glue.Wherein carrying out wet method
After aluminium etching, the structure of power component product is as shown in Figure 1, bottom is dielectric layer, i.e. inter-level dielectric（InterLayer
Dielectric, ILD）, top layer is photoresist（Photoresist, PR）, it is metal layer between bottom and top layer, generally
For Al-Si-Cu alloy.Dielectric layer is the medium for being used to keep apart metal layer and other components in chip, generally using pure two
Silica makes or is made of the silica containing boron or/and phosphorus.When wet method aluminium etches, corrosive liquid passes through most
The vacancy of the photoresist on upper strata enters metal layer, erodes metal therein, and silicon will be remained in the metal layer after being corroded
Slag.
Power component product after wet method aluminium etching, sometimes because row's goods problem stand-by period is longer or due to environment
The reasons such as humidity is higher, it is easy to absorb compared with juicy, desilication slag is gone in following dry method（Industry often with board be AE2001,
CDE etc., gas are fluoro-gas）Afterwards, aluminium surface can be attached to some upper polymer, fluorine and water, and aluminium can occur instead with water, fluorine
Should, a kind of in Surface Creation is difficult the pointing object being etched away, and dotted aluminium residual will be formed after next dry method aluminium etching.
Particularly, when this dotted aluminium revolution mark is larger, power component product rejection can be caused.
Invention content
（One）Technical problems to be solved
The present invention provides a kind of aluminium lithographic method and system, dotted to solve easily to be formed on aluminium layer surface in the prior art
The technical issues of aluminium remains.
（Two）Technical solution
In order to solve the above technical problems, the present invention provides a kind of aluminium lithographic method, including：
There is the aluminium layer of photoresist layer using wet etching；
Remaining white residue in the aluminium layer is removed, and dry method is carried out to the aluminium layer in same intracavitary immediately using dry method
Etching.
Further, it after the aluminium layer using wet etching with photoresist layer, and is gone described using dry method
Before remaining white residue in the aluminium layer, further include：
Using photoresist layer 100 to 150 seconds described in ultraviolet light, and it is heated to 120 to 140 degrees Celsius of solid glues.
Further, remaining white residue includes in the aluminium layer using dry method removal：
Oxygen and carbon tetrafluoride mixed gas are passed through the aluminium layer surface, cavity pressure is made to reach 35 to 45mtorr；Profit
The mixed gas is ionized with radio frequency, forms fluorine-containing, oxygen plasma gas；Enable fluorine-containing, oxygen the plasma gas with
Remaining white residue reacts 4 to 6 minutes in aluminium layer, pumps residual gas after reaction.
Further, it is described that aluminium layer progress dry etching is included：
Chlorine, boron chloride and fluoroform mixed gas are passed through the aluminium layer surface；After pressure stabilisation utilize is penetrated
Frequency ionizes the mixed gas, until reaction is completed.
On the other hand, the present invention also provides a kind of aluminium etching system, including：Wet etching unit and dry method desilication slag etching
Unit, wherein：
Wet etching unit, for having the aluminium layer of photoresist layer using wet etching；
Dry method desilication slag etch unit, for removing remaining white residue in the aluminium layer using dry method, and immediately same
A intracavitary carries out dry etching to the aluminium layer.
Further, the system also includes：
Solid glue unit is connected between wet etching unit and dry method desilication slag etch unit, for utilizing ultraviolet lighting
It penetrates the photoresist layer 100 to 150 seconds, and is heated to 120 to 140 degrees Celsius of solid glues.
Further, the dry method desilication slag etch unit includes：
Desilication slag subelement, for removing remaining white residue in the aluminium layer using dry method：Oxygen and carbon tetrafluoride are mixed
It closes gas and is passed through the aluminium layer surface, cavity pressure is made to reach 35 to 45mtorr；The mixed gas is ionized using radio frequency,
Form fluorine-containing, oxygen plasma gas；Fluorine-containing, oxygen the plasma gas is enabled to react 4 to 6 points with white residue remaining in aluminium layer
Clock pumps residual gas after reaction.
Further, the dry method desilication slag etch unit includes：
Dry etching subelement, for carrying out dry etching to the aluminium layer：Chlorine, boron chloride and fluoroform are mixed
It closes gas and is passed through the aluminium layer surface；It is after pressure stabilisation to be ionized the mixed gas using radio frequency, until reaction is completed.
Further, the dry method desilication slag etch unit is：Anisotropic etching board.
Further, the dry method desilication slag etch unit is：AME8330.
（Three）Advantageous effect
As it can be seen that in aluminium lithographic method proposed by the present invention and system, removed in aluminium layer after remaining white residue in dry method,
Intracavitary does not stop, and carries out dry method aluminium etching at once, reduces the stand-by period between white residue and dry method aluminium etch step, so as to
It avoids power component product and absorbs excessive moisture in air, effectively prevent the reaction of the generations such as aluminium and water, fluorine.
The present invention will not generate on aluminium layer surface and be difficult to the dotted residual etched away, solve the problems, such as thus caused product rejection.
The present invention carries out desilication slag operation, and combine with dry method aluminium etching in anisotropic etching board, disposably
Power component product needed for being obtained in anisotropic etching board, avoids and separated the operation of different type board originally and drew
The exception entered obtains good effect.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Some bright embodiments, for those of ordinary skill in the art, without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structure diagram of power component product after wet method aluminium etching；
Fig. 2 is the basic procedure schematic diagram of aluminium lithographic method of the embodiment of the present invention；
Fig. 3 is the flow diagram of a preferred embodiment of the invention aluminium lithographic method；
Fig. 4 is the basic structure schematic diagram of aluminium etching system of the embodiment of the present invention；
Fig. 5 is the structure diagram of a preferred embodiment of the invention aluminium etching system.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
All other embodiments obtained without creative efforts shall fall within the protection scope of the present invention.
The embodiment of the present invention proposes a kind of aluminium lithographic method first, referring to Fig. 2, including：
Step 201：There is the aluminium layer of photoresist layer using wet etching.
Step 202：Remaining white residue in the aluminium layer is removed, and immediately in same intracavitary to the aluminium layer using dry method
Carry out dry etching.
As it can be seen that in the aluminium lithographic method proposed in the embodiment of the present invention, removed in aluminium layer after remaining white residue in dry method,
Intracavitary does not stop, and carries out dry method aluminium etching at once, reduces the stand-by period between white residue and dry method aluminium etch step, so as to
It avoids power component product and absorbs excessive moisture in air, effectively prevent the reaction of the generations such as aluminium and water, fluorine.
The aluminium lithographic method of the embodiment of the present invention will not generate on aluminium layer surface and be difficult to the dotted residual etched away, thus solving causes
Product rejection problem.
In one embodiment of the invention, crystal column surface can be removed using the method for solid glue before desilication slag is gone
And the moisture of photoresist, improve the bombardment resistance and corrosion resistance of photoresist.Preferably, ultraviolet light photoresist can be utilized
Layer is simultaneously heated to 120 to 140 degrees Celsius of bakings, and time control was at 100 to 150 seconds.By solid glue, the corrosion of wet method aluminium can be removed
The moisture that left behind afterwards, while evaporate the partial solvent in photoresist enhances the adhesiveness of photoresist and aluminium and against corrosion
Property.
In another embodiment of the present invention, it is preferable that remaining white residue can utilize following steps in removal aluminium layer：
By oxygen（O2）And carbon tetrafluoride（CF4）Mixed gas is passed through aluminium layer surface, reaches cavity pressure by vacuum pump
35 to 45mtorr；
Utilize radio frequency（RF）Above-mentioned mixed gas is ionized, forms fluorine-containing, oxygen plasma gas；
Fluorine-containing, oxygen plasma gas is enabled to be reacted 4 to 6 minutes with white residue remaining in aluminium layer, stops upper plus RF, reaction stops
Only.Pump the SiF of reaction generation4、CO2, the gases such as CO, obtain the power component product after desilication slag.
In one embodiment of the invention, it is preferable that carrying out dry etching to aluminium layer can include：
Required mixed gas CL is passed through to aluminium layer surface2、BCL3、CHF3；
After pressure stabilisation plus RF ionizes above-mentioned mixed gas；
The CL in gas after ionization reacts generation ALCL with AL3, residual gas after reaction is taken away, reaches setting time
Stop afterwards plus RF, etching finish.
Below for carrying out aluminium etching to power component product, embodiment of coming that the present invention will be described in detail it is specific
Realization process, referring to Fig. 3：
Step 301：There is the aluminium layer of photoresist layer using wet etching.
In this step, the aluminium layer for having photoresist layer to power component product using wet method performs etching.Wherein, first
One layer of photoresist is coated on aluminium layer, is then exposed, development treatment, finally aluminium layer is performed etching using wet method.
Step 302：Utilize ultraviolet light solid glue.
In this step, using the remaining photoresist layer of ultraviolet light 100 to 150 seconds, and it was Celsius to be heated to 120 to 140
Spend solid glue.By solid glue, the moisture that left behind after the corrosion of wet method aluminium can be removed, while it is molten to evaporate the part in photoresist
Agent enhances the adhesiveness and corrosion stability of photoresist and aluminium.
Step 303：Remaining white residue in aluminium layer is removed using dry method.
The operating process of this step is as follows：
By oxygen（O2）And carbon tetrafluoride（CF4）Mixed gas is passed through aluminium layer surface, reaches cavity pressure by vacuum pump
35 to 45mtorr；
Utilize radio frequency（RF）Above-mentioned mixed gas is ionized, forms fluorine-containing, oxygen plasma gas；
Fluorine-containing, oxygen plasma gas is enabled to be reacted 4 to 6 minutes with white residue remaining in aluminium layer, stops upper plus RF, reaction stops
Only.Pump the SiF of reaction generation4、CO2, the gases such as CO, obtain the power component product after desilication slag.
Step 304：Dry etching is carried out to aluminium layer in same intracavitary immediately.
When carrying out dry etching to aluminium layer, required mixed gas CL is passed through to aluminium layer surface first2、BCL3、CHF3；
After pressure stabilisation plus RF ionizes above-mentioned mixed gas；The CL in gas after ionization reacts generation ALCL with AL3, will react
Residual gas is taken away afterwards, stops after reaching setting time plus RF, etching finish.
So far, then the overall process for the method that the embodiment of the present invention etches power component product aluminium is completed.
In addition, it is necessary to explanation, above-mentioned all flows description based on Fig. 3 is that one kind of aluminium lithographic method of the present invention is excellent
The realization process of choosing, can be as needed on the basis of flow shown in Fig. 2 in the practical realization of aluminium lithographic method of the present invention
Random variation is carried out, can be that the arbitrary steps in Fig. 3 is selected to realize, the sequencing of each step can also be adjusted as needed
It is whole etc..
The embodiment of the present invention also provides a kind of aluminium etching system, referring to Fig. 4, including：
Wet etching unit 401, for having the aluminium layer of photoresist layer using wet etching；
Dry method desilication slag etch unit 402, for removing remaining white residue in the aluminium layer using dry method, and immediately same
One intracavitary carries out dry etching to the aluminium layer.
In one embodiment of the invention, crystal column surface can be removed using the method for solid glue before desilication slag is gone
And the moisture of photoresist, improve the bombardment resistance and corrosion resistance of photoresist.Preferably, system can also include：Solid glue unit
501, such as Fig. 5, it is connected between wet etching unit 401 and dry method desilication slag etch unit 402, for utilizing ultraviolet light
Photoresist layer 100 to 150 seconds, and it is heated to 120 to 140 degrees Celsius of solid glues.By solid glue, can remove residual after wet method aluminium corrodes
The moisture stayed, while the partial solvent in photoresist is evaporated, enhance the adhesiveness and corrosion stability of photoresist and aluminium.
In another embodiment of the present invention, it is preferable that dry method desilication slag etch unit 402 can include：Desilication slag
Subelement 502, for utilizing remaining white residue in dry method removal aluminium layer：
Oxygen and carbon tetrafluoride mixed gas are passed through aluminium layer surface, cavity pressure is made to reach 35 to 45mtorr；Using penetrating
Frequency ionizes mixed gas, forms fluorine-containing, oxygen plasma gas；It enables residual in fluorine-containing, oxygen the plasma gas and aluminium layer
The white residue stayed reacts 4 to 6 minutes, pumps residual gas after reaction.
In one embodiment of the invention, it is preferable that dry method desilication slag etch unit 402 can also include：Dry method is carved
Subelement 503 is lost, for carrying out dry etching to aluminium layer：
Chlorine, boron chloride and fluoroform mixed gas are passed through aluminium layer surface；It is after pressure stabilisation to utilize radio frequency
Mixed gas ionizes, until reaction is completed.
Dry method, which sweeps white residue technique technology ripe at present, is made a return journey desilication slag using the board of isotropic etching, but at this
In another embodiment of invention, it is preferable that anisotropic etching machine operations dry method desilication slag etch step can be utilized.
In one embodiment of the invention, dry method desilication slag etch unit model can be：Application material
AME8330。
It should be noted that the structure of each embodiment of above-mentioned aluminium etching system shown in fig. 5 can carry out arbitrary group
It closes and uses.
As it can be seen that the embodiment of the present invention has the advantages that：
In the aluminium lithographic method and system that are proposed in the embodiment of the present invention, removed in aluminium layer after remaining white residue in dry method,
It does not stop in intracavitary, carries out dry method aluminium etching at once, reduce the stand-by period between white residue and dry method aluminium etch step, from
And avoid power component product and absorb excessive moisture in air, effectively prevent the anti-of the generations such as aluminium and water, fluorine
It should.The aluminium lithographic method of the embodiment of the present invention will not generate on aluminium layer surface and be difficult to the dotted residual etched away, solve thus
Caused product rejection problem.
The embodiment of the present invention carries out desilication slag operation, and combine with dry method aluminium etching in anisotropic etching board,
Power component product needed for disposably being obtained in anisotropic etching board, avoids and separates different type board work originally
Industry and the exception introduced, obtain good effect.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
To modify to the technical solution recorded in foregoing embodiments or carry out equivalent replacement to which part technical characteristic；
And these modification or replace, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (8)
1. a kind of aluminium lithographic method, which is characterized in that including：
There is the aluminium layer of photoresist layer using wet etching；
Remaining white residue in the aluminium layer is removed, and in same intracavitary is carried out to the aluminium layer dry method quarter immediately using dry method
Erosion；
Wherein, after the aluminium layer using wet etching with photoresist layer, and the aluminium is removed using dry method described
In layer before remaining white residue, further include：
Using photoresist layer 100 to 150 seconds described in ultraviolet light, and it is heated to 120 to 140 degrees Celsius of solid glues.
2. aluminium lithographic method according to claim 1, which is characterized in that described removed in the aluminium layer using dry method is remained
White residue include：
Oxygen and carbon tetrafluoride mixed gas are passed through the aluminium layer surface, cavity pressure is made to reach 35 to 45mtorr；Using penetrating
Frequency ionizes the mixed gas, forms fluorine-containing, oxygen plasma gas；Enable fluorine-containing, oxygen the plasma gas and aluminium layer
In remaining white residue react 4 to 6 minutes, pump residual gas after reaction.
3. aluminium lithographic method according to claim 1 or 2, which is characterized in that described that dry etching is carried out to the aluminium layer
Including：
Chlorine, boron chloride and fluoroform mixed gas are passed through the aluminium layer surface；It is after pressure stabilisation to utilize radio frequency
The mixed gas ionization, until reaction is completed.
4. a kind of aluminium etching system, which is characterized in that including：Wet etching unit and dry method desilication slag etch unit, wherein：
Wet etching unit, for having the aluminium layer of photoresist layer using wet etching；
Dry method desilication slag etch unit, for removing remaining white residue in the aluminium layer using dry method, and immediately in same chamber
It is interior that dry etching is carried out to the aluminium layer；
Solid glue unit is connected between wet etching unit and dry method desilication slag etch unit, for utilizing ultraviolet light institute
It states photoresist layer 100 to 150 seconds, and is heated to 120 to 140 degrees Celsius of solid glues.
5. aluminium etching system according to claim 4, which is characterized in that the dry method desilication slag etch unit includes：
Desilication slag subelement, for removing remaining white residue in the aluminium layer using dry method：By oxygen and carbon tetrafluoride gaseous mixture
Body is passed through the aluminium layer surface, and cavity pressure is made to reach 35 to 45mtorr；The mixed gas is ionized using radio frequency, is formed
Fluorine-containing, oxygen plasma gas；Fluorine-containing, oxygen the plasma gas is enabled to be reacted 4 to 6 minutes with white residue remaining in aluminium layer,
Pump residual gas after reacting.
6. aluminium etching system according to claim 4, which is characterized in that the dry method desilication slag etch unit includes：
Dry etching subelement, for carrying out dry etching to the aluminium layer：By chlorine, boron chloride and fluoroform gaseous mixture
Body is passed through the aluminium layer surface；It is after pressure stabilisation to be ionized the mixed gas using radio frequency, until reaction is completed.
7. the aluminium etching system according to any one of claim 4 to 6, which is characterized in that the dry method desilication slag etching
Unit is：Anisotropic etching board.
8. the aluminium etching system according to any one of claim 4 to 6, which is characterized in that the dry method desilication slag etching
Unit is：AME8330.
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| CN107293474B (en) * | 2016-03-30 | 2020-09-04 | 北大方正集团有限公司 | Integrated circuit metal connecting line and preparation method thereof |
| CN107346732B (en) * | 2016-05-04 | 2020-10-16 | 北大方正集团有限公司 | Method for preparing metal connecting wire of integrated circuit |
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| US4547260A (en) * | 1983-04-13 | 1985-10-15 | Fujitsu Limited | Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices |
| CN102339749A (en) * | 2010-07-16 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Metal aluminum bonding pad etching method |
| CN103021817A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method of cleaning after wet etching |
| CN103325678A (en) * | 2013-05-20 | 2013-09-25 | 扬州晶新微电子有限公司 | IC two- micrometer-thick aluminum etching process method |
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| JPH10107239A (en) * | 1996-09-27 | 1998-04-24 | Sony Corp | Solid state image-pickup device and its manufacture |
| JP2001007111A (en) * | 1999-06-23 | 2001-01-12 | Seiko Epson Corp | Semiconductor device and manufacture thereof |
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- 2014-01-23 CN CN201410032415.7A patent/CN104810279B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547260A (en) * | 1983-04-13 | 1985-10-15 | Fujitsu Limited | Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices |
| CN102339749A (en) * | 2010-07-16 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Metal aluminum bonding pad etching method |
| CN103021817A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method of cleaning after wet etching |
| CN103325678A (en) * | 2013-05-20 | 2013-09-25 | 扬州晶新微电子有限公司 | IC two- micrometer-thick aluminum etching process method |
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