CN104810279A - Aluminum etching method and aluminum etching device - Google Patents
Aluminum etching method and aluminum etching device Download PDFInfo
- Publication number
- CN104810279A CN104810279A CN201410032415.7A CN201410032415A CN104810279A CN 104810279 A CN104810279 A CN 104810279A CN 201410032415 A CN201410032415 A CN 201410032415A CN 104810279 A CN104810279 A CN 104810279A
- Authority
- CN
- China
- Prior art keywords
- etching
- aluminium
- aluminium lamination
- white residue
- dry method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 158
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 111
- 238000005530 etching Methods 0.000 title claims abstract description 64
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- 239000011737 fluorine Substances 0.000 claims abstract description 20
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 20
- 238000001312 dry etching Methods 0.000 claims abstract description 18
- 239000004411 aluminium Substances 0.000 claims description 142
- 238000003475 lamination Methods 0.000 claims description 69
- 239000003595 mist Substances 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000001039 wet etching Methods 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 12
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 10
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 8
- 125000001153 fluoro group Chemical group F* 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000006641 stabilisation Effects 0.000 claims description 7
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001868 water Inorganic materials 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000002893 slag Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 206010073478 Anaplastic large-cell lymphoma Diseases 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides an aluminum etching method and an aluminum etching device. The aluminum etching method is characterized by comprising the steps of etching an aluminum layer with a photoresist layer by using a wet method; and removing residual silicon slag in the aluminum layer by using a dry method, and carrying out dry etching on the aluminum layer immediately in the same cavity. According to the aluminum etching method and the aluminum etching system provided by the invention, after the residual silicon slag in the aluminum layer is removed by using the dry method, the process is not stopped in the cavity, dry aluminum etching is carried out immediately, and the waiting time between the steps of silicon slag removing and dry aluminum etching is reduced, thereby preventing a power component product from absorbing too much water in the air, and effectively preventing aluminum from being reacted with water, fluorine or the like. According to the aluminum etching method, point-like residue, which is difficult to be etched, is not generated at the surface of the aluminum layer, and a problem of product scrap caused by the point-like residue is solved.
Description
Technical field
The present invention relates to semiconductor chip fabrication process technical field, particularly relate to a kind of aluminium lithographic method and device.
Background technology
In semiconductor chip manufacture process, the metal level of power component product, adopt aluminium/silicon (1%)/copper (0.5%) alloy, thickness is generally 3 microns or 4 microns more.Because the size of power component product is comparatively large, aluminium thickness is that the power device of 3 microns uses Whote-wet method to carry out aluminium etching, and because of the lateral encroaching of Whote-wet method aluminium etching excessive, aluminium thickness is that the power component product of 4 microns generally uses " wet+dry " aluminium etching.In wet method aluminium etch process flow, corrosive liquid does not corrode silicon, and therefore, after above-mentioned wet method aluminium has etched, the white residue in metal level will left behind.And in the technique of " wet+dry " aluminium etching, after the corrosion of wet method aluminium, before dry method aluminium etching, then must remove white residue by dry method and be removed by white residue clean, otherwise its follow-up dry method aluminium etching process will be had influence on.
---photoetching development---glue---------inspection---dry method aluminium etching---cleaning that dry method removes white residue that wet method aluminium etches that in " wet+dry " aluminium etching technics in the industry, the step comprised is as follows: Gu resist coating.Wherein after carrying out wet method aluminium etching, the structure of power component product as shown in Figure 1, bottom is dielectric layer, i.e. inter-level dielectric (InterLayer Dielectric, ILD), the superiors are photoresist (Photoresist, PR), be metal level between bottom and the superiors, be generally Al-Si-Cu alloy.Dielectric layer is the medium for metal level and other components and parts being kept apart in chip, and the general pure silicon dioxide that adopts makes, or adopts containing boron or/and the silicon dioxide of phosphorus makes.When wet method aluminium etches, corrosive liquid enters metal level by the vacancy of the photoresist of the superiors, erodes metal wherein, will remain white residue in the metal level after being corroded.
Power component product after wet method aluminium etching, sometimes because row's goods problem stand-by period is longer, or due to the more high reason of ambient humidity, be easy to absorb comparatively juicy, (it is AE2001, CDE etc. that industry commonly uses board to remove white residue in following dry method, gas is fluoro-gas) after, some polymer, fluorine and water can incidentally be gone up in aluminium surface, and aluminium can react with water, fluorine, in a kind of pointing object being difficult to be etched away of Surface Creation, after ensuing dry method aluminium etching, formation point-like aluminium is remained.Especially, when this point-like aluminium revolution mark is larger, power component product rejection can be caused.
Summary of the invention
(1) technical problem that will solve
The invention provides a kind of aluminium lithographic method and system, easily form the residual technical problem of point-like aluminium on aluminium lamination surface to solve in prior art.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of aluminium lithographic method, comprising:
Wet etching is utilized to have the aluminium lamination of photoresist layer;
Utilize dry method to remove white residue residual in described aluminium lamination, and in same chamber, dry etching is carried out to described aluminium lamination immediately.
Further, utilize after wet etching has the aluminium lamination of photoresist layer described, and utilize before dry method removes white residue residual in described aluminium lamination described, also comprise:
Utilize photoresist layer described in UV-irradiation 100 to 150 seconds, and be heated to 120 to 140 degrees Celsius of solid glue.
Further, describedly utilize dry method to remove in described aluminium lamination residual white residue to comprise:
Oxygen and carbon tetrafluoride mist are passed into described aluminium lamination surface, make cavity pressure reach 35 to 45mtorr; Utilize radio frequency to be ionized by described mist, form plasma gas that is fluorine-containing, oxygen; Make white residue residual in the plasma gas of described fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, pump reaction residual gas afterwards.
Further, describedly dry etching carried out to described aluminium lamination comprise:
Chlorine, boron chloride and fluoroform mist are passed into described aluminium lamination surface; Described mist ionizes, until reacted by the radio frequency that utilizes after pressure stabilisation.
On the other hand, the present invention also provides a kind of aluminium etching system, comprising: wet etching unit and dry method remove white residue etching single unit, wherein:
Wet etching unit, for the aluminium lamination utilizing wet etching to have photoresist layer;
Dry method, except white residue etching single unit, for utilizing dry method to remove white residue residual in described aluminium lamination, and carries out dry etching to described aluminium lamination immediately in same chamber.
Further, described system also comprises:
Gu glue unit, being connected to wet etching unit and dry method except between white residue etching single unit, for utilizing photoresist layer described in UV-irradiation 100 to 150 seconds, and being heated to 120 to 140 degrees Celsius of solid glue.
Further, described dry method comprises except white residue etching single unit:
Silica removal bits unit, removes white residue residual in described aluminium lamination for utilizing dry method: oxygen and carbon tetrafluoride mist are passed into described aluminium lamination surface, make cavity pressure reach 35 to 45mtorr; Utilize radio frequency to be ionized by described mist, form plasma gas that is fluorine-containing, oxygen; Make white residue residual in the plasma gas of described fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, pump reaction residual gas afterwards.
Further, described dry method comprises except white residue etching single unit:
Dry etching subelement, for carrying out dry etching to described aluminium lamination: chlorine, boron chloride and fluoroform mist to be passed into described aluminium lamination surface; Described mist ionizes, until reacted by the radio frequency that utilizes after pressure stabilisation.
Further, described dry method except white residue etching single unit is: anisotropic etching board.
Further, described dry method except white residue etching single unit is: AME8330.
(3) beneficial effect
Visible, in the aluminium lithographic method and system of the present invention's proposition, after dry method removes white residue residual in aluminium lamination, do not stop in chamber, carry out dry method aluminium etching at once, decrease the stand-by period between white residue and dry method aluminium etch step, thus avoid the moisture of power component product hyperabsorption in atmosphere, effectively prevent the reaction that aluminium and water, fluorine etc. occur.The present invention can not produce on aluminium lamination surface the point-like being difficult to etch away and remain, and solves the product rejection problem caused thus.
The present invention carries out silica removal slag operation at anisotropic etching board, and etch with dry method aluminium and combine, disposable obtain at anisotropic etching board needed for power component product, avoided original separately dissimilar board operation and the exception introduced, obtained good effect.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of power component product after wet method aluminium etching;
Fig. 2 is the basic procedure schematic diagram of embodiment of the present invention aluminium lithographic method;
Fig. 3 is the schematic flow sheet of a preferred embodiment of the invention aluminium lithographic method;
Fig. 4 is the basic structure schematic diagram of embodiment of the present invention aluminium etching system;
Fig. 5 is the structural representation of a preferred embodiment of the invention aluminium etching system.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
First the embodiment of the present invention proposes a kind of aluminium lithographic method, see Fig. 2, comprising:
Step 201: utilize wet etching to have the aluminium lamination of photoresist layer.
Step 202: utilize dry method to remove white residue residual in described aluminium lamination, and in same chamber, dry etching is carried out to described aluminium lamination immediately.
Visible, in the aluminium lithographic method that the embodiment of the present invention proposes, after dry method removes white residue residual in aluminium lamination, do not stop in chamber, carry out dry method aluminium etching at once, decrease the stand-by period between white residue and dry method aluminium etch step, thus avoid the moisture of power component product hyperabsorption in atmosphere, effectively prevent the reaction that aluminium and water, fluorine etc. occur.The aluminium lithographic method of the embodiment of the present invention can not produce on aluminium lamination surface the point-like being difficult to etch away and remain, and solves the product rejection problem caused thus.
In one embodiment of the invention, before removal white residue, the method for solid glue can be utilized to remove the moisture of crystal column surface and photoresist, improves bombardment resistance and the corrosion resistance of photoresist.Preferably, can utilize UV-irradiation photoresist layer and be heated to 120 to 140 degrees Celsius of bakings, time controling was at 100 to 150 seconds.By solid glue, the moisture that left behind after can removing the corrosion of wet method aluminium, evaporates the partial solvent in photoresist simultaneously, strengthens adhesiveness and the corrosion stability of photoresist and aluminium.
In another embodiment of the present invention, preferably, remove white residue residual in aluminium lamination and can utilize following steps:
By oxygen (O
2) and carbon tetrafluoride (CF
4) mist passes into aluminium lamination surface, makes cavity pressure reach 35 to 45mtorr by vacuum pump;
Utilize radio frequency (RF) to be ionized by above-mentioned mist, form plasma gas that is fluorine-containing, oxygen;
Make white residue residual in the plasma gas of fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, on stopping, add RF, reaction stopping.Pump the SiF that reaction generates
4, CO
2, the gas such as CO, obtain the power component product after removing white residue.
In one embodiment of the invention, preferably, carry out dry etching to aluminium lamination can comprise:
Required mist CL is passed into aluminium lamination surface
2, BCL
3, CHF
3;
Above-mentioned mist ionizes by the RF of adding after pressure stabilisation;
CL and AL reaction in gas after ionization generates ALCL
3, residual gas after reaction is taken away, stops after reaching setting-up time adding RF, etch complete.
Below to carry out aluminium etching to a power component product, describe the specific implementation process of the embodiment of the present invention in detail, see Fig. 3:
Step 301: utilize wet etching to have the aluminium lamination of photoresist layer.
In this step, wet method is utilized to etch the aluminium lamination that power component product has photoresist layer.Wherein, first on aluminium lamination, be coated with one deck photoresist, then carry out exposing, development treatment, finally utilize wet method to etch aluminium lamination.
Step 302: utilize the solid glue of UV-irradiation.
In this step, utilize the remaining photoresist layer of UV-irradiation 100 to 150 seconds, and be heated to 120 to 140 degrees Celsius of solid glue.By solid glue, the moisture that left behind after can removing the corrosion of wet method aluminium, evaporates the partial solvent in photoresist simultaneously, strengthens adhesiveness and the corrosion stability of photoresist and aluminium.
Step 303: utilize dry method to remove white residue residual in aluminium lamination.
The operating process of this step is as follows:
By oxygen (O
2) and carbon tetrafluoride (CF
4) mist passes into aluminium lamination surface, makes cavity pressure reach 35 to 45mtorr by vacuum pump;
Utilize radio frequency (RF) to be ionized by above-mentioned mist, form plasma gas that is fluorine-containing, oxygen;
Make white residue residual in the plasma gas of fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, on stopping, add RF, reaction stopping.Pump the SiF that reaction generates
4, CO
2, the gas such as CO, obtain the power component product after removing white residue.
Step 304: in same chamber, dry etching is carried out to aluminium lamination immediately.
When carrying out dry etching to aluminium lamination, first pass into required mist CL to aluminium lamination surface
2, BCL
3, CHF
3; Above-mentioned mist ionizes by the RF of adding after pressure stabilisation; CL and AL reaction in gas after ionization generates ALCL
3, residual gas after reaction is taken away, stops after reaching setting-up time adding RF, etch complete.
So far, then the overall process of the embodiment of the present invention to the method that power component product aluminium etches is completed.
In addition, it should be noted that, above-mentioned all flow processs descriptions based on Fig. 3 are preferred implementation procedures of one of aluminium lithographic method of the present invention, in the actual realization of aluminium lithographic method of the present invention, random variation can be carried out as required on the basis of flow process shown in Fig. 2, can be select the arbitrary steps in Fig. 3 to realize, the sequencing of each step also can adjust as required.
The embodiment of the present invention also provides a kind of aluminium etching system, see Fig. 4, comprising:
Wet etching unit 401, for the aluminium lamination utilizing wet etching to have photoresist layer;
Dry method, except white residue etching single unit 402, for utilizing dry method to remove white residue residual in described aluminium lamination, and carries out dry etching to described aluminium lamination immediately in same chamber.
In one embodiment of the invention, before removal white residue, the method for solid glue can be utilized to remove the moisture of crystal column surface and photoresist, improves bombardment resistance and the corrosion resistance of photoresist.Preferably, system can also comprise: Gu glue unit 501, as Fig. 5, is connected to wet etching unit 401 and dry method except between white residue etching single unit 402, for utilizing UV-irradiation photoresist layer 100 to 150 seconds, and is heated to 120 to 140 degrees Celsius of solid glue.By solid glue, the moisture that left behind after can removing the corrosion of wet method aluminium, evaporates the partial solvent in photoresist simultaneously, strengthens adhesiveness and the corrosion stability of photoresist and aluminium.
In another embodiment of the present invention, preferably, dry method is removed white residue etching single unit 402 and can be comprised: silica removal bits unit 502, removes white residue residual in aluminium lamination for utilizing dry method:
Oxygen and carbon tetrafluoride mist are passed into aluminium lamination surface, makes cavity pressure reach 35 to 45mtorr; Utilize radio frequency to be ionized by mist, form plasma gas that is fluorine-containing, oxygen; Make white residue residual in the plasma gas of described fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, pump reaction residual gas afterwards.
In one embodiment of the invention, preferably, dry method is removed white residue etching single unit 402 and can also be comprised: dry etching subelement 503, for carrying out dry etching to aluminium lamination:
Chlorine, boron chloride and fluoroform mist are passed into aluminium lamination surface; Mist ionizes by the radio frequency that utilizes after pressure stabilisation, until reacted.
It is use the board of isotropic etching to remove white residue that dry method sweeps white residue technique technology ripe at present, but in another embodiment of the present invention, preferably, anisotropic etching machine operations dry method can be utilized except white residue etch step.
In one embodiment of the invention, dry method except white residue etching single unit model can be: application material AME8330.
It should be noted that, the structure of each embodiment of the aluminium etching system shown in above-mentioned Fig. 5 can carry out combination in any use.
Visible, the embodiment of the present invention has following beneficial effect:
In the aluminium lithographic method and system of embodiment of the present invention proposition, after dry method removes white residue residual in aluminium lamination, do not stop in chamber, carry out dry method aluminium etching at once, decrease the stand-by period between white residue and dry method aluminium etch step, thus avoid the moisture of power component product hyperabsorption in atmosphere, effectively prevent the reaction that aluminium and water, fluorine etc. occur.The aluminium lithographic method of the embodiment of the present invention can not produce on aluminium lamination surface the point-like being difficult to etch away and remain, and solves the product rejection problem caused thus.
The embodiment of the present invention carries out silica removal slag operation at anisotropic etching board, and etch with dry method aluminium and combine, disposable obtain at anisotropic etching board needed for power component product, avoided original separately dissimilar board operation and the exception introduced, obtained good effect.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an aluminium lithographic method, is characterized in that, comprising:
Wet etching is utilized to have the aluminium lamination of photoresist layer;
Utilize dry method to remove white residue residual in described aluminium lamination, and in same chamber, dry etching is carried out to described aluminium lamination immediately.
2. aluminium lithographic method according to claim 1, is characterized in that, utilizes after wet etching has the aluminium lamination of photoresist layer described, and utilizes before dry method removes white residue residual in described aluminium lamination described, also comprises:
Utilize photoresist layer described in UV-irradiation 100 to 150 seconds, and be heated to 120 to 140 degrees Celsius of solid glue.
3. aluminium lithographic method according to claim 1, is characterized in that, describedly utilizes dry method to remove in described aluminium lamination residual white residue to comprise:
Oxygen and carbon tetrafluoride mist are passed into described aluminium lamination surface, make cavity pressure reach 35 to 45mtorr; Utilize radio frequency to be ionized by described mist, form plasma gas that is fluorine-containing, oxygen; Make white residue residual in the plasma gas of described fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, pump reaction residual gas afterwards.
4. aluminium lithographic method according to any one of claim 1 to 3, is characterized in that, describedly carries out dry etching to described aluminium lamination and comprises:
Chlorine, boron chloride and fluoroform mist are passed into described aluminium lamination surface; Described mist ionizes, until reacted by the radio frequency that utilizes after pressure stabilisation.
5. an aluminium etching system, is characterized in that, comprising: wet etching unit and dry method remove white residue etching single unit, wherein:
Wet etching unit, for the aluminium lamination utilizing wet etching to have photoresist layer;
Dry method, except white residue etching single unit, for utilizing dry method to remove white residue residual in described aluminium lamination, and carries out dry etching to described aluminium lamination immediately in same chamber.
6. aluminium etching system according to claim 5, is characterized in that, described system also comprises:
Gu glue unit, being connected to wet etching unit and dry method except between white residue etching single unit, for utilizing photoresist layer described in UV-irradiation 100 to 150 seconds, and being heated to 120 to 140 degrees Celsius of solid glue.
7. aluminium etching system according to claim 5, is characterized in that, described dry method is removed white residue etching single unit and comprised:
Silica removal bits unit, removes white residue residual in described aluminium lamination for utilizing dry method: oxygen and carbon tetrafluoride mist are passed into described aluminium lamination surface, make cavity pressure reach 35 to 45mtorr; Utilize radio frequency to be ionized by described mist, form plasma gas that is fluorine-containing, oxygen; Make white residue residual in the plasma gas of described fluorine-containing, oxygen and aluminium lamination react 4 to 6 minutes, pump reaction residual gas afterwards.
8. aluminium etching system according to claim 5, is characterized in that, described dry method is removed white residue etching single unit and comprised:
Dry etching subelement, for carrying out dry etching to described aluminium lamination: chlorine, boron chloride and fluoroform mist to be passed into described aluminium lamination surface; Described mist ionizes, until reacted by the radio frequency that utilizes after pressure stabilisation.
9. the aluminium etching system according to any one of claim 5 to 8, is characterized in that, described dry method is removed white residue etching single unit and is: anisotropic etching board.
10. the aluminium etching system according to any one of claim 5 to 8, is characterized in that, described dry method is removed white residue etching single unit and is: AME8330.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032415.7A CN104810279B (en) | 2014-01-23 | 2014-01-23 | A kind of aluminium lithographic method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032415.7A CN104810279B (en) | 2014-01-23 | 2014-01-23 | A kind of aluminium lithographic method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104810279A true CN104810279A (en) | 2015-07-29 |
| CN104810279B CN104810279B (en) | 2018-07-10 |
Family
ID=53695010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410032415.7A Active CN104810279B (en) | 2014-01-23 | 2014-01-23 | A kind of aluminium lithographic method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104810279B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293474A (en) * | 2016-03-30 | 2017-10-24 | 北大方正集团有限公司 | integrated circuit metal line and preparation method thereof |
| CN107346732A (en) * | 2016-05-04 | 2017-11-14 | 北大方正集团有限公司 | The preparation method of integrated circuit metal line |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547260A (en) * | 1983-04-13 | 1985-10-15 | Fujitsu Limited | Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices |
| JPH10107239A (en) * | 1996-09-27 | 1998-04-24 | Sony Corp | Solid state image-pickup device and its manufacture |
| JP2001007111A (en) * | 1999-06-23 | 2001-01-12 | Seiko Epson Corp | Semiconductor device and manufacture thereof |
| CN102339749A (en) * | 2010-07-16 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Metal aluminum bonding pad etching method |
| CN103021817A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method of cleaning after wet etching |
| CN103325678A (en) * | 2013-05-20 | 2013-09-25 | 扬州晶新微电子有限公司 | IC two- micrometer-thick aluminum etching process method |
-
2014
- 2014-01-23 CN CN201410032415.7A patent/CN104810279B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547260A (en) * | 1983-04-13 | 1985-10-15 | Fujitsu Limited | Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices |
| JPH10107239A (en) * | 1996-09-27 | 1998-04-24 | Sony Corp | Solid state image-pickup device and its manufacture |
| JP2001007111A (en) * | 1999-06-23 | 2001-01-12 | Seiko Epson Corp | Semiconductor device and manufacture thereof |
| CN102339749A (en) * | 2010-07-16 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Metal aluminum bonding pad etching method |
| CN103021817A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method of cleaning after wet etching |
| CN103325678A (en) * | 2013-05-20 | 2013-09-25 | 扬州晶新微电子有限公司 | IC two- micrometer-thick aluminum etching process method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293474A (en) * | 2016-03-30 | 2017-10-24 | 北大方正集团有限公司 | integrated circuit metal line and preparation method thereof |
| CN107293474B (en) * | 2016-03-30 | 2020-09-04 | 北大方正集团有限公司 | Integrated circuit metal connecting line and preparation method thereof |
| CN107346732A (en) * | 2016-05-04 | 2017-11-14 | 北大方正集团有限公司 | The preparation method of integrated circuit metal line |
| CN107346732B (en) * | 2016-05-04 | 2020-10-16 | 北大方正集团有限公司 | Method for preparing metal connecting wire of integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104810279B (en) | 2018-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104620364B (en) | The method of the silicon etching planarized for trenched side-wall | |
| CN101552189B (en) | Plasma processing method | |
| KR20190049482A (en) | Method for etching features in a stack | |
| JPS6246526A (en) | Etching | |
| JP2009530861A5 (en) | ||
| JP2003518738A (en) | Silicon metal mask etching method | |
| CN103730351A (en) | Post-etching ashing method and forming method of magnetic sensor | |
| CN104810279A (en) | Aluminum etching method and aluminum etching device | |
| JP2016105461A (en) | Novel method to etch copper barrier film | |
| KR20140016905A (en) | Etching gas and etching method | |
| CN104599962A (en) | Thick aluminum etching polymer removing method | |
| JP5167052B2 (en) | Dry etching method | |
| JP2003332288A (en) | Water feeding method and water feeding apparatus | |
| TW201419405A (en) | Method for etching with controlled wiggling | |
| CN104157568B (en) | Method and device for removing silicon slag | |
| CN103021817A (en) | Method of cleaning after wet etching | |
| JP2017162933A (en) | Wafer dividing method | |
| CN108400090A (en) | Prevent the processing method of Al corruption | |
| CN106128939B (en) | The method of the abnormal MIM capacitor dielectric layer of processing | |
| CN101853807B (en) | Method for dielectric material removal between conductive lines | |
| JP6551784B2 (en) | Method and apparatus for managing carbonic acid concentration in resist stripping solution | |
| TW201533270A (en) | Apparatus and method for processing of metal surfaces with an etching liquid | |
| CN104882374B (en) | Lithographic method and etching constituent | |
| CN104766797A (en) | Aluminum etching method | |
| JP4722243B2 (en) | Gas for dry etching and processing method of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220721 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, fangzheng building, 298 Fu Cheng Road, Beijing, Haidian District Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |