CN104810257A - Metal organic chemical vapor deposition equipment and temperature control method thereof - Google Patents
Metal organic chemical vapor deposition equipment and temperature control method thereof Download PDFInfo
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- CN104810257A CN104810257A CN201510103197.6A CN201510103197A CN104810257A CN 104810257 A CN104810257 A CN 104810257A CN 201510103197 A CN201510103197 A CN 201510103197A CN 104810257 A CN104810257 A CN 104810257A
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000007669 thermal treatment Methods 0.000 claims description 127
- 239000007921 spray Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 description 16
- 238000000407 epitaxy Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
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Abstract
The invention provides metal organic chemical vapor deposition equipment and a temperature control method thereof. The equipment comprises a cavity, a susceptor arranged at the inner side of the cavity and capable of rotating, multiple heaters for heating the susceptor, a gas ejector, multiple temperature detection sensors, and a controller, wherein at least one substrate is arranged on the susceptor; temperature of the heaters is controlled independently; the gas ejector is located at the upper part of the susceptor and ejects an III-group gas and a V-group gas to the susceptor; the multiple temperature detection sensors are located at the upper part of the susceptor and measures temperature of a heating area heated by each heater; and the controller stores a temperature set value needed by the heating area, compares a detection temperature value detected by each temperature detection sensor and the set value needed by the heating area, and controls the temperature of the heating area. Through effectveily adjusting necessary temperature conditions for each epitaxial process in the metal organic chemical vapor deposition equipment, temperature tilt is uniformly executed on the entire substrate during the entire process, and the process is executed through raising the temperature from room temperature to 1200 DEG C. The process efficiency and the deposition uniformity are thus improved.
Description
The divisional application that the application is application number is 200980162274.8, the applying date is on October 28th, 2009, denomination of invention is the patent application of " Metalorganic Chemical Vapor deposition apparatus and temperature-controlled process thereof ".
Technical field
The present invention relates to a kind of Metalorganic Chemical Vapor deposition apparatus and temperature-controlled process thereof, and more specifically, relate to a kind of Metalorganic Chemical Vapor deposition apparatus and the temperature-controlled process thereof that can control the temperature of multiple separation thermal treatment zone.
Background technology
Nitride material, as the material manufacturing luminescent device, is well-known.The luminescent device of nitride material is utilized mainly to have wherein sequentially stacked resilient coating, the N-shaped doped layer be made up of N-shaped GaN crystal, the active layer be made up of InGaN and the structure of p-type doped layer be made up of p-type GaN be made up of GaN crystal on such as sapphire substrate.And, sequentially these floor stacked in a Metalorganic Chemical Vapor deposition apparatus room.
But the temperature conditions for each layer is different, and in order to satisfied temperature condition, at every turn when each layer growth, all wants effective control temperature condition.And if when fixing multiple wafer and perform technique on susceptor, the temperature homogeneity in the whole region of susceptor has appreciable impact to process efficiency.Such as, if be 1200 DEG C for the formation of the temperature of N-shaped doped layer, then the temperature for the formation of active layer can be 700 DEG C to 900 DEG C.In addition, when multilayer active layer, will repeat to change technological temperature between 700 DEG C and 900 DEG C.
Summary of the invention
In order to effectively perform technique and obtain high quality light-emitting device, it is extremely important technology that the temperature in Metalorganic Chemical Vapor deposition apparatus controls.If effectively carried out this temperature to control, then can obtain efficient luminescent device.Therefore, the temperature that the object of the invention is more effectively to perform Metalorganic Chemical Vapor deposition apparatus controls.
The invention provides a kind of Metalorganic Chemical Vapor deposition apparatus and temperature-controlled process thereof, wherein effectively can control the temperature of susceptor in the epitaxy technique each time in Metalorganic Chemical Vapor deposition apparatus.
Metalorganic Chemical Vapor deposition apparatus according to the present invention comprises: chamber; Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein; Multiple heater, is configured to heat susceptor and has their independent controlled temperature; Gas ejector, to be positioned over above susceptor and to be configured to spray III gas and V race gas towards susceptor; Multiple temperature detecting sensor, the side being positioned over susceptor is configured to the temperature measuring the thermal treatment zone of being heated by each heater; And controller, be configured to store the desired temperature needed for each thermal treatment zone, and by the detecting temperature detected by each temperature detecting sensor value being controlled compared with each desired temperature needed for the thermal treatment zone temperature of the thermal treatment zone.
The thermal treatment zone can comprise the independent heater be independently controlled, and temperature controller can comprise the separate controller for controlling each heater, and the independent power supply of electric power can be provided independently to be connected to each heater to each heater by being used for.
Temperature controller can comprise the separate controller for controlling each thermal treatment zone, and the desired temperature being used for any one thermal treatment zone is stored as representative temperature set point, and controls the temperature of the thermal treatment zone according to representative temperature set point.
Temperature controller can control the temperature in the representative heat district selected from each thermal treatment zone according to representative temperature set point, and controls the temperature of the residue thermal treatment zone except representative heat district according to the detecting temperature value by detecting for the temperature detecting sensor of the temperature detecting representative heat district among temperature detecting sensor.
Temperature controller can measure the temperature dip trend (rampingtendency) detected by representative heat district, and performs control to make the residue thermal treatment zone except representative heat district consistent with the temperature dip trend in representative heat district.
Temperature dip trend can be the temperature dip speed in representative heat district.
Temperature controller can store the independent desired temperature needed for each thermal treatment zone and utilize independent desired temperature to control the temperature of each thermal treatment zone.
Temperature controller can be measured the temperature dip trend detected in each thermal treatment zone and also perform control to make the thermal treatment zone have this temperature dip trend.
Temperature dip trend can be the temperature dip speed of each thermal treatment zone.
Temperature dip trend can be the variations in temperature of each in the desired temperature of the thermal treatment zone.
Temperature controller can calculate the mean value of the temperature detected during susceptor rotates specific times, and by this mean value being controlled compared with each desired temperature the temperature of the thermal treatment zone.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be the temperature of susceptor.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be substrate temperature.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be susceptor and substrate temperature.
For the method for the temperature of the multiple thermal treatment zone of control of Metalorganic Chemical Vapor deposition apparatus according to the present invention, comprising: by the temperature utilizing each temperature detecting sensor to detect the thermal treatment zone; By the temperature value that detected by temperature detecting sensor compared with each desired temperature; With by utilizing, the temperature controller for storing the desired temperature needed for each thermal treatment zone is next controls the thermal treatment zone according to desired temperature.
The thermal treatment zone can comprise the independent heater be independently controlled, and temperature controller can comprise the separate controller for controlling each heater, and the independent power supply of electric power can be provided separately to be connected to each heater to each heater by being used for.
Temperature controller can comprise the separate controller for controlling each thermal treatment zone, and the desired temperature being used for any one thermal treatment zone is stored as representative temperature set point, and controls the temperature of the thermal treatment zone according to representative temperature set point.
Temperature controller can control the temperature in the representative heat district selected from each thermal treatment zone according to representative temperature set point, and controls the temperature of the residue thermal treatment zone except representative heat district according to the detecting temperature value by detecting for the temperature detecting sensor of the temperature detecting representative heat district among each temperature detecting sensor.
Temperature controller can measure the temperature dip trend detected by representative heat district, and performs control to make the residue thermal treatment zone except representative heat district consistent with the temperature dip trend in representative heat district.
Temperature dip trend can be the temperature dip speed in representative heat district.
Temperature controller can store the independent desired temperature needed for each thermal treatment zone and utilize independent desired temperature to control the temperature of each thermal treatment zone.
Temperature controller can be measured the temperature dip trend detected in each thermal treatment zone and also perform control to make the thermal treatment zone have this temperature dip trend.
Temperature dip trend can be the temperature dip speed of each thermal treatment zone.
Temperature dip trend can be the variations in temperature of each in the desired temperature of the thermal treatment zone.
Temperature controller can calculate the mean value of the temperature detected during susceptor rotates specific times, and by this mean value being controlled compared with each desired temperature the temperature of the thermal treatment zone.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be the temperature of susceptor.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be substrate temperature.
The temperature of the thermal treatment zone detected by temperature detecting sensor can be susceptor and substrate temperature.
Beneficial effect
According to Metalorganic Chemical Vapor deposition apparatus of the present invention and temperature-controlled process, change to from normal temperature the Metalorganic Chemical Vapor deposition apparatus that 1200 DEG C of periods perform technique in temperature, to effectively control the temperature conditions needed for epitaxy technique, temperature dip required during making to perform technique equably in all substrates.Therefore, this is favourable, because can improve the deposit uniformity and process efficiency.
Brief description of the drawings
Fig. 1 is the view of the embodiment that Metalorganic Chemical Vapor deposition apparatus is shown;
Fig. 2 is the view of the first embodiment of the temperature control system that Metalorganic Chemical Vapor deposition apparatus is shown;
Fig. 3 illustrates the flow chart utilized according to the first control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 2;
Fig. 4 illustrates the flow chart utilized according to the second control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 2;
Fig. 5 is the chart of the temperature dip trend illustrated in each temperature-controlled area;
Fig. 6 is the view of the second embodiment of the temperature control system that Metalorganic Chemical Vapor deposition apparatus is shown;
Fig. 7 illustrates the flow chart utilized according to the control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 6.
Embodiment
Metalorganic Chemical Vapor deposition apparatus according to embodiment and temperature-controlled process thereof are described below.
Fig. 1 is the view of the embodiment that Metalorganic Chemical Vapor deposition apparatus is shown.
As shown in fig. 1, Metalorganic Chemical Vapor deposition apparatus comprises: reative cell 100 and in reative cell 100 from the gas ejector 101 of top lower portion inject process gas.Gas ejector 101 can comprise shower nozzle, nozzle etc. for spraying III gas and V race gas.In addition, in each gas ejector, multiple point of observation 101a with bottom opening are formed, so that after a while can detecting temperature by the temperature detecting sensor be described to.
In addition, susceptor 102 is arranged on below gas ejector 101, in susceptor 102, is provided with the substrate 103 of such as at least a slice Sapphire Substrate 103.In FIG, substrate 103 can be attached susceptor (satellite susceptor), and it has at least one fixing substrate 103 wherein, and can depart from from susceptor 102 and outwards extract.
The rotation that attached susceptor can be configured to by means of susceptor 102 is rotated round the rotating shaft 104 of susceptor 102 and is rotated by self and rotate and rotate.To this, motor 105 is arranged on below susceptor 102, and the center of susceptor 102 is coupled in the rotating shaft 104 of motor 105.In addition, although not shown, in order to the rotation of attached susceptor, attached susceptor can be configured by air pressure or mechanically actuated operation rotates.
In addition, the multiple heaters 200,201,202 and 203 for susceptor 102 being heated to high temperature are installed in the below of susceptor 102.Heater can be formed by tungsten heater, ceramic heater, RF heater or equivalent.Heater comprises primary heater 200, secondary heater 201, the 3rd heater 202 and the 4th heater 203.Primary heater 200 heats the part as the susceptor 102 immediate vicinity of inner side.
In the present embodiment, first thermal treatment zone is called as by the region that primary heater 200 heats.In addition, secondary heater 201, the 3rd heater 202 and the 4th heater 203 are sequentially placed on the outside of primary heater 200, and the district corresponding with the 4th heater 203 to secondary heater 201, the 3rd heater 202 is sequentially divided into second thermal treatment zone, the 3rd thermal treatment zone and the 4th thermal treatment zone.In addition, primary heater 200, secondary heater 201, the 3rd heater 202 and the 4th heater 203 comprise: for detect the temperature of first thermal treatment zone of being heated by primary heater 200 the first temperature detecting sensor 240, for detect the temperature of second thermal treatment zone the second temperature detecting sensor 241, for detecting the 3rd temperature detecting sensor 242 of the temperature of the 3rd thermal treatment zone and the 4th temperature detecting sensor 243 for the temperature that detects the 4th thermal treatment zone.The thermal treatment zone detected by each temperature detecting sensor 240,241,242 and 243 can be each position on susceptor 102, the region of the temperature of probing substrate 103 (i.e. wafer) can be become, or during susceptor 102 rotates the region of both probing substrate 103 and wafer temperature.
Meanwhile, in another embodiment, temperature detecting sensor can be placed on the downside of susceptor 102.Here, temperature detecting sensor can be thermocouple or pyrometer.If employing pyrometer, then can form point of observation below the heater of such as RF heater.
Fig. 2 is the view of the first embodiment of the temperature control system that Metalorganic Chemical Vapor deposition apparatus is shown.
As shown in Figure 2, in the temperature control system of Metalorganic Chemical Vapor deposition apparatus, multiple power supply and multiple controller are connected to each heater.First, the first power supply 210 for supplying electric power to primary heater 200 is connected to primary heater 200.First power supply 210 is equipped with the first separate controller 220 for controlling the first power supply 210.In addition, the second source 211 for supplying electric power to secondary heater 201 is connected to secondary heater 201.Second source 211 is equipped with the second separate controller 221 for controlling second source 211.In addition, the 3rd power supply 212 for supplying electric power to the 3rd heater 202 is connected to the 3rd heater 202.3rd power supply 212 is equipped with the 3rd separate controller 222 for controlling the 3rd power supply 212.In addition, the 4th power supply 213 for supplying electric power to the 4th heater 203 is connected to the 4th heater 203.4th power supply 213 is equipped with the 4th separate controller 223 for controlling the 4th power supply 213.
In addition, the master controller 230 for controlling first, second, third and fourth separate controller 220,221,222 and 223 is also set.In addition, each in separate controller 220,221,222 and 223 calculates the mean value of the temperature detected during susceptor 102 rotates one or many and this mean value is defined as detecting temperature value.That is, performed by C.T mean value and desired temperature the temperature of each thermal treatment zone is controlled.
Fig. 3 illustrates the flow chart utilized according to the first control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 2.
As shown in Figure 3, identical first order desired temperature (S10) can be specified to first, second, third and fourth separate controller 220,221,222 with 223.This desired temperature can be the ramped temperature (ramping temperature) as the target in each district.Ramped temperature is set as the reason of identical desired temperature (or set point) is to get off metallorganic matter be deposited on whole substrate 103 equably by susceptor 102 being remained on identical temperature.
Such as, in the epitaxy technique for the manufacture of luminescent device (LED), suppose that the temperature 1200 DEG C for heat treatment under the first hydrogen atmosphere on the substrate 103 and cleaning substrate 103 is target temperature, then can become desired temperature by this target temperature that temperature detecting sensor detects.
In addition, if specify identical first order desired temperature to independent controller 220,221,222 with 223, first, second, third and fourth separate controller 220,221,222 applies identical desired temperature to first, second, third and fourth power supply 210,211,212 with 213 with 223.Therefore, susceptor 102 is heated to identical desired temperature (S11) by first, second, third and fourth heater 200,201,202 and 203.Here, susceptor 102 rotates with specific rotary speed.
Meanwhile, first, second, third and fourth temperature detecting sensor 240,241,242 and 243 detects the temperature of the susceptor 102 in each thermal treatment zone, and the temperature value of detection is sent to independent controller 220,221,222 and 223 (S12).In addition, when detected temperature reaches first order desired temperature, each in heater 200,201,202 and 203 remains on the associated temperature of the acceptable error scope of first order desired temperature.Acceptable error scope can in 3% of design temperature.
When temperature changes in first order desired temperature surface thereof, temperature detecting sensor 240,241,242 and 243 is analyzed and is determined the temperature dip trend (that is, temperature ascendant trend or temperature downward trend) (S13) of first thermal treatment zone.Temperature dip trend can be that the temperature dip time is to temperature value (that is, rate of rise in temperature or temperature decrease speed).
Temperature dip trend relates to the deposit uniformity and the deposit quality of wafer in epitaxy technique.If temperature dip trend is different in each thermal treatment zone, because deposit quality is worsened, be then difficult to the result obtaining high-quality epitaxy technique.Therefore, if keep identical or very similar temperature dip trend in each thermal treatment zone, then the improvement of epitaxial quality can be expected.The control of temperature dip trend will be described in detail with reference to figure 5.
By regulating temperature dip trend to perform temperature dip (temperature ramping), to make the first, second, third and fourth thermal treatment zone, there is identical or very similar temperature dip trend (S14).If each temperature of the first, second, third and fourth thermal treatment zone reaches desired temperature, the epitaxy technique (S15) of carry out desired.
Now determine whether related process completes (S16).If as the result determined, master controller 230 is determined to need to perform next technique, then the desired temperature (S17) that input is different from first order desired temperature.Such as, master controller 230 can provide second level desired temperature (that is, (1+n) level, wherein n is natural number) as desired temperature to first, second, third and fourth separate controller 220,221,222 and 223.Therefore, first, second, third and fourth separate controller 220,221,222 and 223 performs control, to make to perform temperature dip by power supply 210,211,212 and 213 according to the next stage desired temperature in heater 200,201,202 and 203.Equally, temperature dip trend is kept.
In addition, when perform in a reative cell 100 multiple there is the epitaxy technique of different condition time, temperature setting can be implemented to multiple different desired temperature.Because perform an epitaxy technique in a reative cell 100, so depend on that the process condition of reative cell 100 can change temperature setting by various mode.
Meanwhile, in another embodiment, by performing temperature dip to heater 200,201,202 with the different and exclusive desired temperature of 203 input.In this case, if arrange a large amount of substrate 103 in large-sized susceptor 102, when being difficult to the temperature utilizing identical desired temperature to control very large regions scope, or in order to the extension uniformity, process goal has different temperature dip values in each thermal treatment zone, and process efficiency good time, then perform temperature dip.In another example, when temperature dip needs to be controlled more energetically, when such as needing different technique in each position of susceptor 102, temperature dip is performed.
Method for this embodiment shown in Figure 4.Fig. 4 illustrates the flow chart utilized according to the second control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 2.
As shown in Figure 4, master controller 230 pairs of first, second, third and fourth separate controllers 220,221,222 and 223 specify exclusive desired temperature (S20).Each exclusive desired temperature can be the ramped temperature (ramping temperature) as pinpoint target in each thermal treatment zone.
When specifying exclusive desired temperature to separate controller 220,221,222 and 223, exclusive desired temperature is supplied to first, second, third and fourth power supply 210,211,212 and 213 by first, second, third and fourth separate controller 220,221,222 and 223.Therefore, first, second, third and fourth heater 200,201,202 and 203 heats susceptor 102 (S21) according to described exclusive desired temperature.Here, susceptor 102 is rotated with specific rotary speed.
Then, first, second, third and fourth temperature detecting sensor 240,241,242 and 243 detects the temperature of each thermal treatment zone and the temperature of detection is sent to independent controller 220,221,222 and 223 (S22).When the temperature of detection reaches each exclusive desired temperature, associated temperature remains within the scope of the acceptable error of default exclusive desired temperature by each heater 200,201,202 and 203.Acceptable error scope can be design temperature 3% in.
When temperature changes (ramped) in exclusive desired temperature surface thereof, the first temperature detecting sensor 240 determines the temperature dip trend (temperature ascendant trend or temperature downward trend) of first thermal treatment zone.The characteristic of this temperature dip trend and the identical of the first method.
The first, second, third and fourth thermal treatment zone is adjusted to there is identical or closely similar temperature dip trend when, when the temperature of each in the first, second, third and fourth thermal treatment zone reaches default exclusive desired temperature, the epitaxy technique (S24, S25) of carry out desired.
Now determine whether related process completes (S26).If as the result determined, master controller 230 is determined to need to perform next technique, then master controller 230 inputs different from the first exclusive desired temperature the second new exclusive desired temperature as desired temperature (S27).Therefore, first, second, third and fourth separate controller 220,221,222 and 223 performs control, makes in heater 200,201,202 and 203, to perform temperature dip according to the exclusive desired temperature of next stage by each power supply.Equally, described temperature dip trend is kept.
Meanwhile, Fig. 5 shows the temperature dip trend in temperature-controlled area.In Figure 5, by LED epitaxy technique being described as an example the technique being used for the temperature dip trend kept in each heater or district.
As shown in Figure 5, in order to perform epitaxy technique, the susceptor 102 in reative cell 100 is placed such as sapphire multiple substrate 103.Then, the inner and outer of reative cell 100 is intercepted and opens absolutely, and carry out the preparation starting technique.Within the time starting technique, first, second, third and fourth temperature detecting sensor 240,241,242 and 243 is measured the temperature in associated heat district and result of detection is sent to independent controller 220,221,222 and 223.
Process sequence as required performs technique.First technique is for the cleaning by heat treatment washing substrate 103.For cleaning, desired temperature is set as 1000 DEG C to 1200 DEG C, and the inner side of reative cell 100 becomes hydrogen atmosphere.
If be set as identical by each desired temperature, identical desired temperature is sent to first, second, third and fourth separate controller 220,221,222 and 223 by master controller 230.If in order to the uniformity of technique arranges different desired temperatures in each thermal treatment zone, exclusive desired temperature is sent to independent controller 220,221,222 and 223 by master controller 230.In either case, required in Technology for Heating Processing temperature is 1000 DEG C to 1200 DEG C within the scope of acceptable error.
If design temperature set point as mentioned above, heater performs temperature dip according to desired temperature.In Technology for Heating Processing, temperature dip condition makes temperature rise to desired temperature.Now, the temperature dip trend (i.e. rate of rise in temperature) in first thermal treatment zone is detected.In other words, carry out the detecting temperature rate of climb according to time consuming temperature, and then by second, second with each in the rate of rise in temperature in the 4th thermal treatment zone compared with the rate of rise in temperature in first thermal treatment zone.If detect the thermal treatment zone with the rate of rise in temperature different from the rate of rise in temperature of first thermal treatment zone, separate controller 220,221,222 and 223 then for controlling each heater 200,201,202 and 203 controls the rate of rise in temperature in each thermal treatment zone, makes to perform rate of rise in temperature equably in each thermal treatment zone.
When each in the temperature of the first, second, third and fourth thermal treatment zone reaches desired temperature within the scope of acceptable error, substrate 103 is heated and to be annealed at the temperature corresponding to associated temperature set point 10 to 20 minutes.Technology for Heating Processing is cleaning, for removing foreign substance layer, and the oxidation film on such as substrate 103.Here, the inner side of reative cell 100 becomes hydrogen atmosphere.
When Technology for Heating Processing completes, perform the technique of deposit GaN resilient coating.The technique of deposit GaN resilient coating is the technique of the GaN layer that the about 100nm of deposit is thick at 450 DEG C to 600 DEG C.For Technology for Heating Processing, the temperature in each thermal treatment zone that temperature has risen must be down to 450 DEG C to 600 DEG C.Temperature now becomes the second desired temperature.
Therefore, when the second desired temperature to be sent to first, second, third and fourth separate controller 220,221,222 and 223 by master controller 230, separate controller 220,221,222 and 223 controls first, second, third and fourth heater 200,201,202 and 223 respectively, makes temperature be reduced to the second desired temperature.First, second, third and fourth temperature detecting sensor 240,241,242 and 243 continues detecting temperature decline state and the temperature of detection is sent to first, second, third and fourth separate controller 220,221,222 and 223.In addition, master controller 230 detects the temperature dip trend received from the first separate controller 220, and perform control, make second, third and the 4th heater 201,202 and 203 according to the temperature dip trend operation detected, and therefore the temperature decline of the first, second, third and fourth thermal treatment zone have identical temperature dip trend.
If buffer growth is to the thickness of about 100nm, then the unadulterated GaN layer of deposit.The unadulterated GaN layer of deposit 60 minutes at the temperature of 1000 DEG C to 1100 DEG C.
To this, temperature rises again.In addition, as mentioned above, the temperature in each thermal treatment zone rise there is identical temperature dip trend state under perform technique.In addition, during performing temperature dip, perform the technique being deposited with active layer and p-GaN layer.In this case, each thermal treatment zone has identical temperature dip trend.If keep identical temperature dip trend in each layer as above, then this is favourable, because in the substrate 103 of susceptor 102, utilize the layer of epitaxy technique deposit to have very uniform crystalline growth quality.
In addition, temperature dip trend can be the variations in temperature of temperature dip speed (i.e. rate of rise in temperature or temperature decrease speed) or desired temperature.If same or similar ground control temperature pitch velocity and variations in temperature, then can perform epitaxy technique with higher efficiency.
Meanwhile, in the Metalorganic Chemical Vapor deposition apparatus of the present embodiment, temperature control system can be modified and realize in a different manner.Fig. 6 is the view of the second embodiment of the temperature control system that Metalorganic Chemical Vapor deposition apparatus is shown, and Fig. 7 illustrates the flow chart utilized according to the control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 6.
According in the temperature control system of the second embodiment, as shown in Figure 6, be connected to primary heater 200 for the first power supply 210 supplying electric power to primary heater 200.First power supply 210 is equipped with the first separate controller 220 for controlling the first power supply 210.In addition, the second source 211 for supplying electric power to secondary heater 201 is connected to secondary heater 201.Second source 211 is equipped with the second separate controller 221 for controlling second source 211.In addition, the 3rd power supply 212 for supplying electric power to the 3rd heater 202 is connected to the 3rd heater 202.3rd power supply 212 is equipped with the 3rd separate controller 222 for controlling the 3rd power supply 212.In addition, the 4th power supply 213 for supplying electric power to the 4th heater 203 is connected to the 4th heater 203.4th power supply 213 is equipped with the 4th separate controller 223 for controlling the 4th power supply 213.In addition, the master controller 230 for controlling the first separate controller 220 is set.
In addition, different from the first embodiment, master controller 230 is connected to separate controller 220, and it only provides desired temperature to the first separate controller 220.That is, representative temperature set point is supplied to the first separate controller 220 by master controller 230, and does not provide extra desired temperature to remaining separate controller 221,222 and 223.In addition, during susceptor 102 rotates one or many, separate controller 220,221,222 and 223 calculates the mean value of the temperature of each detection and this mean value is defined as detecting temperature value.Meanwhile, control by utilizing temperature averages and performing temperature at the temperature value of ad-hoc location detection.
In addition, the temperature detected by temperature detecting sensor 240,241,242 and 243 can be the temperature of the susceptor 102 of detection during susceptor 102 rotates, can be the temperature of each substrate 103 (that is, wafer), can be maybe substrate 103 and the temperature both wafer.
Fig. 7 illustrates the flow chart utilized according to the first control method of the temperature control system of the Metalorganic Chemical Vapor deposition apparatus of the embodiment of Fig. 6.
As shown in Figure 7, specify representative temperature set point (that is, first order desired temperature) (S30) can to the first separate controller 220.Representative temperature set point can be the ramped temperature as the target in each district.After controlling separately 220 appointment first order representative temperature set points to first, the first temperature detecting sensor 240,241,242 and 243 detects the temperature of first thermal treatment zone and the temperature value of detection is sent to the first separate controller 220 (S31).
That is, first thermal treatment zone becomes representative heat district.In addition, the temperature of first thermal treatment zone is sent to second, third and the 4th separate controller 221,222 and 223 by the first separate controller 220.Therefore, second, third and the 4th separate controller 221,222 and 223 start to heat (S32) according to the temperature of the detection of first thermal treatment zone.Now, susceptor 102 is rotated with specific rotary speed.
In addition, when temperature is in representative temperature set point surface thereof, the first temperature detecting sensor 240 is analyzed and is determined the temperature dip trend (that is, temperature ascendant trend or temperature downward trend) (S33) of first thermal treatment zone.Then, control second, third and the 4th heater 201,202 and 203, each temperature trend is conditioned (S34).
As mentioned above, under the first, second, third and fourth thermal treatment zone has been adjusted to the state with same or similar temperature dip trend wherein, according to the epitaxy technique (S35) of the temperature carry out desired of the first, second, third and fourth thermal treatment zone.
Then, if the first separate controller 220 determines temperature, tilt variation is in first order representative temperature set point, then the first separate controller 220 controls primary heater 200, makes the temperature after keeping tilting.Now, second, third and the 4th separate controller 221,222 and 223 according to by the first temperature detecting sensor 240,241,242 and 243 real-time detection and the temperature value being reported to the first separate controller 220 continue to control each heater 200,201,202 and 203, make in acceptable error range, the temperature of each thermal treatment zone to be controlled as same or similar with the temperature of first thermal treatment zone (S33, S34).Then, determine whether next technique of execution (S37).If as the result determined, need to perform next technique, then when primary heater 200 starts to perform this technique (S38) when heating under (1+n) level (n is natural number) desired temperature.
Meanwhile, in a second embodiment, control second, third and be convenient to the 4th heater 201,202 and 203 temperature that they follow the tracks of first thermal treatment zone.Therefore, first, second, third and fourth separate controller 220,221,222 and 223 can have time delay ground and automatically keep same or analogous temperature dip trend, and does not need additional control.In addition, even if perform next technique, temperature dip trend and temperature uniformity can be guaranteed, because the tilt condition of primary heater 200 and second, third and the 4th heater 201,202 and 203 is different.
In addition, if possible, the temperature value of first thermal treatment zone provided from the first separate controller 220 to second, third and the 4th separate controller 221,222 and 223 was provided consistently with the shorter time interval, then can more adequately the control temperature uniformity and temperature dip trend.
Claims (14)
1. a Metalorganic Chemical Vapor deposition apparatus, comprising:
Chamber;
Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;
Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;
Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;
Multiple temperature detecting sensor, is configured to the temperature measuring each thermal treatment zone of being heated by each heater; With
Temperature controller, is configured to the temperature controlling each thermal treatment zone by comparing the detecting temperature value detected by each temperature detecting sensor,
Wherein, described temperature controller comprises the multiple separate controllers for controlling each thermal treatment zone, the desired temperature of that is used in each thermal treatment zone is stored as representative temperature set point, and controls the temperature of each thermal treatment zone according to representative temperature set point,
Wherein, described temperature controller is configured to measure the temperature dip trend in the representative heat district detection selected from each thermal treatment zone, and performs control to make the residue thermal treatment zone except described representative heat district consistent with the temperature dip trend in described representative heat district.
2. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1,
Wherein multiple points of observation of lower openings are formed in described gas ejector, make described temperature detecting sensor detect the temperature of each thermal treatment zone.
3. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1,
Wherein, described multiple temperature detecting sensor is placed on below described susceptor.
4. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 2 or claim 3, wherein: described temperature controller controls the temperature in described representative heat district according to described representative temperature set point, and control the temperature of the residue thermal treatment zone except representative heat district according to the detecting temperature value by detecting for the temperature detecting sensor of the temperature detecting representative heat district among each temperature detecting sensor.
5. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1, wherein: described temperature dip trend is the temperature dip speed in representative heat district.
6. a Metalorganic Chemical Vapor deposition apparatus, comprising:
Chamber;
Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;
Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;
Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;
Multiple temperature detecting sensor, is configured to the temperature measuring the thermal treatment zone of being heated by each heater; With
Temperature controller, is configured to store the desired temperature needed for each thermal treatment zone, and by the detecting temperature detected by each temperature detecting sensor value being controlled compared with each desired temperature needed for the thermal treatment zone temperature of the thermal treatment zone,
Wherein, described temperature controller is configured to measure the temperature dip trend detected in each thermal treatment zone, and performs control to make the temperature dip trend of each thermal treatment zone consistent with each other.
7. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 6, wherein:
The thermal treatment zone comprises the independent heater be independently controlled;
Described temperature controller comprises the separate controller for controlling each heater, and
The independent power supply of electric power is independently provided to be connected to each heater by being used for each heater.
8. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 6, wherein: described temperature controller stores each the independent desired temperature needed for each thermal treatment zone, and utilizes independent desired temperature to control the temperature of each thermal treatment zone.
9. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 8, wherein: the temperature dip trend detected in each thermal treatment zone measured by temperature controller, and performs control to make each thermal treatment zone have this temperature dip trend.
10. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 9, wherein: described temperature dip trend is the temperature dip speed of each thermal treatment zone.
11. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 9, wherein: described temperature dip trend is the variations in temperature of each in the desired temperature of each thermal treatment zone.
12. 1 kinds of Metalorganic Chemical Vapor deposition apparatus, comprising:
Chamber;
Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;
Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;
Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;
Multiple temperature detecting sensor, and be configured to the temperature measuring each thermal treatment zone of being heated by each heater; With
Temperature controller, is configured to the temperature controlling the described thermal treatment zone by comparing the detecting temperature value detected by each temperature detecting sensor,
Wherein, this temperature controller calculates the mean value detecting temperature during described susceptor rotates specific times, and controls the temperature of the described thermal treatment zone by comparing this mean value,
Wherein, described temperature controller is configured to measure the temperature dip trend in the representative heat district detection selected from each thermal treatment zone, and performs control to make the residue thermal treatment zone except described representative heat district consistent with the temperature dip trend in described representative heat district.
13. 1 kinds of Metalorganic Chemical Vapor deposition apparatus, comprising:
Chamber;
Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;
Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;
Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;
Multiple temperature detecting sensor, is configured to the temperature measuring each thermal treatment zone of being heated by each heater; With
Temperature controller, comprises the separate controller for controlling each thermal treatment zone, and described controller is configured to take the detecting temperature value detected by each temperature detecting sensor into account control each thermal treatment zone temperature,
Wherein, described temperature controller stores the representative temperature set point of the temperature for controlling the representative heat district selected from each thermal treatment zone,
Wherein, described temperature controller by the temperature value detected in described representative heat district being controlled compared with described representative temperature set point the temperature in described representative heat district, and by respectively the temperature value that detects in the residue thermal treatment zone being controlled the temperature of the described residue thermal treatment zone compared with the temperature value detected in described representative heat district.
14. 1 kinds of methods controlling the temperature of multiple thermals treatment zone of Metalorganic Chemical Vapor deposition apparatus, the method comprises:
By the temperature utilizing each temperature detecting sensor to detect the thermal treatment zone;
By the temperature value that detected by temperature detecting sensor compared with each desired temperature; With by utilizing, the temperature controller for storing the desired temperature needed for each thermal treatment zone is next controls the thermal treatment zone according to desired temperature,
Wherein, described temperature controller is configured to measure the temperature dip trend detected in each thermal treatment zone, and performs control to make the temperature dip trend of each thermal treatment zone consistent with each other.
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| CN200980162274.8A CN102598217B (en) | 2009-10-28 | 2009-10-28 | Metal organic chemical vapor deposition device and temperature control method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805797A (en) * | 2016-09-09 | 2018-03-16 | 中微半导体设备(上海)有限公司 | A kind of over-temperature protection device and method |
| CN111485284A (en) * | 2020-05-26 | 2020-08-04 | 江西乾照光电有限公司 | Deposition equipment, deposition method and determination method of temperature detection point in deposition equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607989A (en) * | 2000-09-27 | 2005-04-20 | 埃姆科尔股份有限公司 | Apparatus and method for controlling temperature uniformity of substrates |
| US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
| TW200937151A (en) * | 2008-01-22 | 2009-09-01 | Tokyo Electron Ltd | Temperature control mechanism and processing apparatus using same |
-
2009
- 2009-10-28 CN CN201510103197.6A patent/CN104810257A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607989A (en) * | 2000-09-27 | 2005-04-20 | 埃姆科尔股份有限公司 | Apparatus and method for controlling temperature uniformity of substrates |
| TW200937151A (en) * | 2008-01-22 | 2009-09-01 | Tokyo Electron Ltd | Temperature control mechanism and processing apparatus using same |
| US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805797A (en) * | 2016-09-09 | 2018-03-16 | 中微半导体设备(上海)有限公司 | A kind of over-temperature protection device and method |
| CN107805797B (en) * | 2016-09-09 | 2019-08-16 | 中微半导体设备(上海)股份有限公司 | A kind of over-temperature protection device and method |
| CN111485284A (en) * | 2020-05-26 | 2020-08-04 | 江西乾照光电有限公司 | Deposition equipment, deposition method and determination method of temperature detection point in deposition equipment |
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