KR20070013100A - Semiconductor manufacturing equipment and cooling method of showerhead using the same - Google Patents
Semiconductor manufacturing equipment and cooling method of showerhead using the same Download PDFInfo
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- KR20070013100A KR20070013100A KR1020050067463A KR20050067463A KR20070013100A KR 20070013100 A KR20070013100 A KR 20070013100A KR 1020050067463 A KR1020050067463 A KR 1020050067463A KR 20050067463 A KR20050067463 A KR 20050067463A KR 20070013100 A KR20070013100 A KR 20070013100A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
Description
도 1은 본 발명에 따른 반도체소자 제조설비에 대해 도시한 구성도이다.1 is a block diagram illustrating a semiconductor device manufacturing facility according to the present invention.
도 2는 본 발명에 따른 반도체소자 제조설비를 이용한 샤워헤드의 냉각방법을 도시한 블록도이다. 2 is a block diagram illustrating a method of cooling a shower head using a semiconductor device manufacturing apparatus according to the present invention.
**도면의 주요 부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **
100 : 반도체소자 제조설비100: semiconductor device manufacturing equipment
110 : 공정챔버110: process chamber
120 : 샤워헤드120: shower head
130 : 히터블록130: heater block
200 : 냉각장치200: cooling device
210 : 칠러210: chiller
215 : 냉각유체공급원215: cooling fluid supply source
220 : 냉각유체공급라인220: cooling fluid supply line
230 : 냉각유체배출라인230: cooling fluid discharge line
240 : 컨트롤러240: controller
250 : 유량조절밸브250: flow control valve
260 : 온도게이지260: temperature gauge
270 : 냉각유로270 cooling path
본 발명은 반도체소자를 제조하기 위한 설비 및 이를 이용한 공정방법에 관한 것으로, 더욱 상세하게는 반도체소자를 제조하기 위하여 고온의 분위기를 필요로 하는 공정챔버의 샤워헤드를 냉각하는 반도체소자 제조설비 및 이를 이용한 샤워헤드의 냉각방법에 관한 것이다.The present invention relates to an apparatus for manufacturing a semiconductor device and a process method using the same. More particularly, a semiconductor device manufacturing facility for cooling a shower head of a process chamber requiring a high temperature atmosphere in order to manufacture a semiconductor device, and the same. It relates to a cooling method of the shower head used.
일반적으로, 반도체소자는 웨이퍼 상에 포토리소그래피, 식각, 애싱, 확산, 화학기상증착, 이온주입 및 금속증착 등의 공정을 선택적으로 반복 수행함으로써 적어도 하나 이상의 도전층, 반도체층, 부도체층 등을 적층하여 조합되게 하는 것으로 만들어진다.In general, a semiconductor device stacks at least one conductive layer, semiconductor layer, non-conductive layer, etc. by selectively repeating a process such as photolithography, etching, ashing, diffusion, chemical vapor deposition, ion implantation, and metal deposition on a wafer. To be combined.
이러한 반도체소자 제조공정 중 식각, 애싱, 확산, 화학기상증착, 금속증착 등의 공정은 진공압 또는 고온의 분위기를 이루는 공정챔버의 내부로 공정가스를 공급하고 이들 공정가스를 플라즈마 상태로 변환하거나 다른 공정가스와 결합하도록 하여 웨이퍼 상에 원하는 반응이 이루어지도록 한다.In the semiconductor device manufacturing process, the etching, ashing, diffusion, chemical vapor deposition, and metal deposition processes supply process gases into a process chamber in a vacuum or high temperature atmosphere and convert these process gases into a plasma state or other process. Coupling with the process gas allows the desired reaction to occur on the wafer.
한편, 고온의 분위기를 이루는 공정챔버에는 이 공정챔버의 내부로 공정가스를 공급하기 위한 샤워헤드가 마련되고, 공정챔버의 내부에는 이 공정챔버의 내부로 이송된 웨이퍼가 안착되고 이 안착된 웨이퍼를 소정 온도로 가열하는 히터블록이 마련된다.On the other hand, the process chamber forming a high-temperature atmosphere is provided with a shower head for supplying the process gas into the process chamber, the wafer transferred to the process chamber inside the process chamber is seated and the seated wafer A heater block for heating to a predetermined temperature is provided.
여기서, 히터블록에는 이 히터블록을 샤워헤드쪽으로 승강시키는 승강유닛이 마련되며, 공정챔버의 내부에서는 이 승강유닛을 이용하여 웨이퍼가 안착된 히터블록을 샤워헤드쪽으로 상승시킴으로써 고온의 분위기로 형성하여 소정 공정을 수행하게 된다.Here, the heater block is provided with a lifting unit for elevating the heater block toward the shower head, and inside the process chamber, the heater block on which the wafer is seated is raised toward the shower head by using the elevating unit to form a high temperature atmosphere. The process will be carried out.
한편, 상기 공정의 과정에서 샤워헤드의 온도는 히터블록이 상승됨으로써 상승되며, 이 히터블록에 의해 상승된 샤워헤드의 온도를 하강시키기 위한 냉각장치가 마련된다.Meanwhile, in the process of the process, the temperature of the shower head is increased by raising the heater block, and a cooling device for lowering the temperature of the shower head raised by the heater block is provided.
이때의 냉각장치는 샤워헤드의 내부에 마련되어 냉각유체가 순환되는 냉각유로와 이 냉각유로로 냉각유체를 공급하는 외부의 칠러(Chiller) 및 이 칠러와 냉각유로를 연결하는 냉각유체공급라인과 냉각유체배출라인으로 구성된다.At this time, the cooling device is provided inside the shower head, and the cooling channel through which the cooling fluid is circulated, the external chiller supplying the cooling fluid to the cooling channel, the cooling fluid supply line connecting the chiller and the cooling channel, and the cooling fluid. It consists of a discharge line.
하지만 종래의 반도체소자 제조설비는 샤워헤드와 히터블록의 간격에 따라 샤워헤드의 온도가 변화되는데, 종래의 냉각장치는 일정온도와 일정유량의 냉각유체를 일률적으로 샤워헤드로 공급한다. 따라서, 승강되는 히터블록의 위치에 따라 변하는 샤워헤드의 온도를 종래의 냉각장치는 대응하지 못하여 샤워헤드의 온도 편차가 커지는 문제점이 있다.However, in the conventional semiconductor device manufacturing equipment, the temperature of the shower head is changed according to the distance between the shower head and the heater block, and the conventional cooling apparatus uniformly supplies a constant temperature and a certain amount of cooling fluid to the shower head. Therefore, the conventional cooling apparatus does not cope with the temperature of the shower head that varies depending on the position of the heater block to be elevated, and thus there is a problem that the temperature deviation of the shower head becomes large.
따라서, 본 발명은 이와 같은 문제점을 감안한 것으로서, 본 발명의 목적은 샤워헤드의 온도변화에 따라 대처할 수 있는 반도체소자 제조설비 및 이를 이용한 샤워헤드의 냉각방법을 제공하는데 있다.Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device manufacturing facility that can cope with a change in temperature of a shower head and a cooling method of a shower head using the same.
이와 같은 목적을 구현하기 위한 본 발명의 제 1관점에 의하면, 공정챔버와, 공정챔버의 하부에 마련되며 웨이퍼가 안착되는 히터블록과, 히터블록과 대향되도록 공정챔버의 상부에 소정 간격 이격위치되며 웨이퍼 상에 소정 공정가스를 공급하는 샤워헤드 및 샤워헤드에 공급되는 냉각유체의 유량을 조절하여 샤워헤드의 온도를 조절하도록 하는 냉각장치를 포함하는 반도체소자 제조설비를 제공한다.According to a first aspect of the present invention for realizing the above object, the process chamber, a heater block provided at a lower portion of the process chamber, and a wafer seated thereon, are spaced apart a predetermined distance from an upper portion of the process chamber so as to face the heater block. Provided is a semiconductor device manufacturing apparatus including a shower head for supplying a predetermined process gas on a wafer, and a cooling device for controlling a temperature of the shower head by adjusting a flow rate of a cooling fluid supplied to the shower head.
여기서, 상기 냉각장치는 샤워헤드의 내부에 마련된 냉각유로와, 냉각유로로 냉각유체를 공급하는 칠러와, 냉각유로로 공급되는 냉각유체의 유량을 조절하는 유량조절밸브 및 샤워헤드의 일측에 마련되어 샤워헤드의 온도를 측정하는 온도게이지를 포함한다.Here, the cooling device is provided on one side of a cooling flow path provided in the shower head, a chiller for supplying a cooling fluid to the cooling flow path, a flow control valve for adjusting the flow rate of the cooling fluid supplied to the cooling flow path, and a shower head. It includes a temperature gauge that measures the temperature of the head.
이때, 상기 칠러는 냉각유체가 저장된 냉각유체공급원과, 냉각유체공급원과 냉각유로의 일측과 연결하여 냉각유체를 냉각유로로 공급하는 냉각유체공급라인 및 냉각유체공급원과 냉각유로의 타측과 연결하여 냉각유로에서 냉각유체공급원으로 냉각유체를 회수하는 냉각유체배출라인으로 구성된다. 그리고, 상기 유량조절밸브는 냉각유체공급라인 상에 마련되는 것이 바람직하다.At this time, the chiller is connected to the cooling fluid supply source, the cooling fluid supply source and the cooling flow path in which the cooling fluid is stored, the cooling fluid supply line for supplying the cooling fluid to the cooling flow path, and the cooling fluid supply source and the other side of the cooling flow path for cooling It consists of a cooling fluid discharge line for recovering the cooling fluid from the flow path to the cooling fluid supply source. In addition, the flow control valve is preferably provided on the cooling fluid supply line.
그리고, 상기 온도게이지는 써모커플게이지인 것이 바람직하다.The temperature gauge is preferably a thermocouple gauge.
한편, 상기와 같은 목적을 구현하기 위한 본 발명의 제 2관점에 의하면, 소정 공정을 수행하기 위해 웨이퍼가 안착된 히터블록을 샤워헤드쪽으로 상승시킴과 아울러 샤워헤드로 냉각유체를 공급하는 단계와, 히터블록의 상승으로 인해 상승된 샤워헤드의 온도를 온도게이지에 의해 측정하는 단계와, 온도게이지에 의해 측정된 샤워헤드의 온도값이 미리 설정된 온도값인지 판단하는 단계 및 샤워헤드의 온도값이 미리 설정된 온도값이면 지속적으로 공정을 수행하는 단계를 포함하는 반도체소자 제조설비를 이용한 샤워헤드의 냉각방법을 제공한다.On the other hand, according to the second aspect of the present invention for achieving the above object, the step of raising the heater block on which the wafer is seated toward the shower head to perform a predetermined process and supplying a cooling fluid to the shower head, Measuring the temperature of the shower head raised due to the rise of the heater block by the temperature gauge, determining whether the temperature value of the shower head measured by the temperature gauge is a preset temperature value and the temperature value of the shower head in advance If the temperature is set to provide a cooling method of the shower head using a semiconductor device manufacturing equipment comprising the step of continuously performing the process.
그리고, 제공된 반도체소자 제조설비를 이용한 샤워헤드의 냉각방법에는 샤워헤드의 온도값이 미리 설정된 온도값이 아니면 상기 냉각유체의 유량을 조절하여 샤워헤드의 온도를 조절하는 단계를 더 포함한다.In addition, the cooling method of the shower head using the provided semiconductor device manufacturing facility further includes controlling the temperature of the shower head by adjusting the flow rate of the cooling fluid if the temperature value of the shower head is not a preset temperature value.
이하, 첨부한 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나, 본 발명은 여기서 설명되어지는 실시예에 한정되지 않고 다른 형태로 구체화될 수도 있다. 오히려, 여기서 소개되는 실시예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되어지는 것이다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey. Like numbers refer to like elements throughout.
도 1은 본 발명에 따른 반도체소자 제조설비를 도시한 구성도이다.1 is a block diagram showing a semiconductor device manufacturing equipment according to the present invention.
도 1을 참조하면, 본 발명에 따른 반도체소자 제조설비(100)에는 소정 공정이 수행되는 공정챔버(110)와 후술할 이 공정챔버(110) 내부의 샤워헤드(120)를 냉 각시키는 냉각장치(200)가 마련된다. Referring to FIG. 1, in a semiconductor device manufacturing apparatus 100 according to the present invention, a cooling apparatus for cooling a process chamber 110 in which a predetermined process is performed and a shower head 120 inside the process chamber 110 to be described later. 200 is provided.
여기서, 공정챔버(110)에는 이 공정챔버(110)의 내부로 이송된 웨이퍼(W)가 안착되는 히터블록(130)이 마련되고, 이 히터블록(130)의 상부에는 히터블록(130)에 대향되도록 소정 간격 이격된 위치에 샤워헤드(120)가 마련된다. 그리고, 공정챔버(110)의 일측에는 히터블록(130)에 웨이퍼(W)를 안착시키기 위해 웨이퍼 이송장치(미도시)가 출입할 수 있도록 슬릿밸브도어(115)가 마련된다.Here, the process chamber 110 is provided with a heater block 130 on which the wafer W transferred to the inside of the process chamber 110 is seated, and the heater block 130 is provided on the heater block 130. The shower head 120 is provided at positions spaced apart from each other to face each other. In addition, a slit valve door 115 is provided at one side of the process chamber 110 to allow the wafer transfer device (not shown) to enter and exit the heater block 130.
이때, 히터블록(130)에는 이 히터블록(130)에 안착된 웨이퍼(W)를 가열하기 위한 다수의 히터(135)가 내장되고, 웨이퍼(W)를 히터블록(130)에 안착시키기 위한 리프트핀(140)이 관통되도록 마련된다. 그리고, 히터블록(130)의 하부에는 소정 공정을 수행하기 위하여 이 히터블록(130)을 샤웨헤드(120)쪽으로 승강시키는 승강유닛(150)이 마련된다.In this case, the heater block 130 includes a plurality of heaters 135 for heating the wafer W seated on the heater block 130, and a lift for seating the wafer W on the heater block 130. The pin 140 is provided to pass through. In addition, a lifting unit 150 is provided below the heater block 130 to elevate the heater block 130 toward the shower head 120 to perform a predetermined process.
그리고, 샤워헤드(120)에는 공정챔버(110)의 내부로 소정 공정가스를 공급하여 히터블록(130)에 안착된 웨이퍼(W) 상에 소정 반응을 일으키게 하는 공정가스유로(125)가 형성된다.In addition, the shower head 120 is provided with a process gas passage 125 for supplying a predetermined process gas into the process chamber 110 to cause a predetermined reaction on the wafer W seated on the heater block 130. .
한편, 냉각장치(200)는 크게 샤워헤드(120)의 내부에 마련된 냉각유로(270)와, 샤워헤드(120)의 온도를 측정하는 온도게이지(260) 및 냉각유로(270)로 냉각유체를 공급하는 칠러(210)로 구성된다.On the other hand, the cooling device 200 is a cooling fluid 270 largely provided inside the shower head 120, the temperature gauge 260 and the cooling flow path 270 for measuring the temperature of the shower head 120 to cool the cooling fluid. It consists of a chiller 210 to supply.
이때, 냉각유로(270)는 샤워헤드(120)의 내부에 마련되어 칠러(210)로부터 공급받은 냉각유체가 이 냉각유로(270)를 따라 유통됨으로써 샤워헤드(120)의 온도를 하강시키게 된다.At this time, the cooling passage 270 is provided inside the shower head 120 to cool down the cooling fluid supplied from the chiller 210 along the cooling passage 270 to lower the temperature of the shower head 120.
그리고, 온도게이지(260)는 냉각유로(270)와 같이 샤워헤드(120)의 내부 일측에 마련되어 샤워헤드(120)의 온도를 측정하는 역할을 한다. 이때의 온도게이지(260)는 두 개의 전극판의 전위차에 따라 온도를 측정할 수 있는 써모커플게이지일 수가 있다.And, the temperature gauge 260 is provided on one side of the shower head 120, such as the cooling flow path 270 serves to measure the temperature of the shower head 120. In this case, the temperature gauge 260 may be a thermocouple gauge capable of measuring temperature according to the potential difference between the two electrode plates.
또한, 칠러(210)는 공정챔버(110)의 외부에 배치되며, 이 칠러(210)의 내부에는 냉각유체가 저장된 냉각유체공급원(215)과, 상술한 온도게이지(260)와 전기적으로 연결되어 이 온도게이지(260)에서 측정된 온도값을 전달받는 컨트롤러(240)가 마련된다.In addition, the chiller 210 is disposed outside the process chamber 110, and the chiller 210 is electrically connected to the cooling fluid supply source 215 in which the cooling fluid is stored, and the temperature gauge 260 described above. The controller 240 receiving the temperature value measured by the temperature gauge 260 is provided.
여기서, 칠러(210)의 냉각유체공급원(215)과 샤워헤드(120)에 마련된 냉각유로(270)의 일측에는 냉각유체의 냉각유체공급라인(220)이 연결되고, 냉각유체공급원(215)과 냉각유로(170)의 타측에는 냉각유체배출라인(230)이 각각 연결된다. 이때의 냉각유체공급라인(220)과 냉각유체배출라인(230)은 냉각유체공급원(215)으로부터 냉각유로(270)로 냉각유체를 공급 또는 회수하는 통로역할을 한다.Here, one side of the cooling fluid supply source 215 of the chiller 210 and the cooling flow path 270 provided in the shower head 120 is connected to the cooling fluid supply line 220 of the cooling fluid, and the cooling fluid supply source 215 and Cooling fluid discharge line 230 is connected to the other side of the cooling flow path 170, respectively. At this time, the cooling fluid supply line 220 and the cooling fluid discharge line 230 serve as a passage for supplying or recovering the cooling fluid from the cooling fluid supply source 215 to the cooling flow path 270.
그리고, 상술한 냉각유체공급라인(220) 상에는 이 냉각유체공급라인(220)을 통해 샤워헤드(120)의 냉각유로(270)로 공급되는 냉각유체의 유량을 조절할 수 있도록 유량조절밸브(250)가 마련된다. 이때의 유량조절밸브(250)는 컨트롤러(240)와 전기적으로 연결되며, 온도게이지(260)로부터 샤워헤드(120)의 온도값을 전달받은 컨트롤러(240)는 유량조절밸브(250)를 제어하여 냉각유로(270)로 공급되는 냉각유체의 유량을 조절하게 되는 것이다. 여기서, 상술한 유량조절밸브(250)는 칠러(210)의 내부에 내장되는 것이 바람직하며, 유량조절밸브(250)는 냉각유체공급라인 (220) 상에 설치되는 플래퍼(미도시)의 회전에 따라 유체의 유량을 조절하는 스로틀밸브일 수 있다.Then, on the cooling fluid supply line 220 described above, the flow rate control valve 250 to control the flow rate of the cooling fluid supplied to the cooling flow path 270 of the shower head 120 through the cooling fluid supply line 220. Is prepared. At this time, the flow control valve 250 is electrically connected to the controller 240, the controller 240 received the temperature value of the shower head 120 from the temperature gauge 260 to control the flow control valve 250 The flow rate of the cooling fluid supplied to the cooling passage 270 is to be adjusted. Here, the above-described flow control valve 250 is preferably embedded in the chiller 210, the flow control valve 250 to the rotation of the flapper (not shown) installed on the cooling fluid supply line 220. It may be a throttle valve to adjust the flow rate of the fluid according.
이하, 도면을 참조하여 본 발명에 따른 반도체소자 제조설비를 이용한 샤워헤드의 냉각방법에 대해 살펴보면 다음과 같다.Hereinafter, a cooling method of a shower head using a semiconductor device manufacturing apparatus according to the present invention will be described with reference to the accompanying drawings.
먼저, 소정 공정을 수행하기 위해서는 공정챔버(110)의 내부로 웨이퍼(W)를 이송하고, 이송된 웨이퍼(W)를 히터블록(130)의 상부로 안착시킨다. 이후, 웨이퍼(W)가 안착되면 공정챔버(110)에서는 히터블록(130)을 샤워헤드쪽(120)으로 승강유닛(150)을 이용하여 상승시키고, 샤웨헤드(120)의 공정가스유로(125)를 통해 이 공정챔버(110)의 내부로 소정의 공정가스를 공급하게 된다. 이때, 샤워헤드(120)는 냉각장치(200)의 냉각유체공급원(215)으로부터 공급된 냉각유체가 상시 공급되고 다시 냉각유체공급원(215)으로 배출되는 과정을 지속적으로 유지하여 샤워헤드(120)의 온도를 냉각시킨다(S10).First, in order to perform a predetermined process, the wafer W is transferred into the process chamber 110, and the transferred wafer W is seated on the heater block 130. Subsequently, when the wafer W is seated, the process chamber 110 raises the heater block 130 to the shower head side 120 using the lifting unit 150, and the process gas flow path 125 of the shower head 120. The predetermined process gas is supplied into the process chamber 110 through). In this case, the shower head 120 continuously maintains a process in which the cooling fluid supplied from the cooling fluid supply source 215 of the cooling device 200 is constantly supplied to and discharged back to the cooling fluid supply source 215, and thus the shower head 120. Cool the temperature (S10).
한편, 상기의 과정에서 승강유닛(150)의 작동에 의해 히터블록(130)이 샤워헤드(120)쪽으로 상승됨으로써 이 히터블록(130)의 위치에 따라 샤워헤드(120)의 온도는 변화하게 된다. On the other hand, the heater block 130 is raised toward the shower head 120 by the operation of the lifting unit 150 in the above process, the temperature of the shower head 120 is changed according to the position of the heater block 130. .
이때, 샤워헤드(120)의 온도변화에 따라 공정불량이 발생되는 것을 방지하기 위해 본 발명에서는 먼저 냉각장치(200)의 온도게이지(260)를 이용하여 이 샤워헤드(120)의 온도를 측정하는 과정을 수행한다(S20).In this case, in order to prevent a process defect from occurring due to the temperature change of the shower head 120, the present invention first measures the temperature of the shower head 120 using the temperature gauge 260 of the cooling device 200. Perform the process (S20).
이후, 온도게이지(260)에서 측정된 샤워헤드(120)의 온도값은 컨트롤러(240)에 전달되며, 컨트롤러(240)는 측정된 샤워헤드(120)의 온도값이 미리 설정된 온도 값인지를 판단하게 된다(S30).Thereafter, the temperature value of the shower head 120 measured by the temperature gauge 260 is transmitted to the controller 240, and the controller 240 determines whether the measured temperature value of the shower head 120 is a preset temperature value. It is made (S30).
이때, 컨트롤러(240)에서 판단된 샤워헤드의 온도값이 미리 설정된 온도값이면 반도체소자 제조설비는 소정의 공정을 지속적으로 수행하게 된다(S40).In this case, when the temperature value of the shower head determined by the controller 240 is a preset temperature value, the semiconductor device manufacturing facility continuously performs a predetermined process (S40).
그러나, 컨트롤러(240)에서 판단된 샤워헤드(120)의 온도값이 미리 설정된 온도값을 벗어나게 되면, 컨트롤러(240)는 유량조절밸브(250)를 조절하여 냉각유로(270)로 유통되는 냉각유체의 유량을 조절함으로써 샤워헤드(120의 온도를 설정된 온도값으로 조절하게 되는 것이다. 예를 들면, 승강유닛(150)에 의해 히터블록(130)이 샤워헤드(120)에 가까워지면 이 히터블록(130)으로 인해 샤워헤드(120)의 온도가 올라가게 되어 냉각유로(270)로 공급되는 냉각유체의 유량은 증가되어야 하고, 히터블록(130)이 샤워헤드(120)로부터 멀어지게 되면 샤워헤드(120)의 온도가 내려가게 되어 냉각유로(270)로 공급되는 냉각유체의 유량은 감소되어야 한다(S50).However, when the temperature value of the shower head 120 determined by the controller 240 is out of the preset temperature value, the controller 240 controls the flow control valve 250 to distribute the cooling fluid to the cooling flow path 270. The temperature of the shower head 120 is adjusted to a set temperature by adjusting the flow rate of the heater head 120. For example, when the heater block 130 approaches the shower head 120 by the lifting unit 150, the heater block ( Due to the temperature of the shower head 120 is increased due to 130, the flow rate of the cooling fluid supplied to the cooling flow path 270 should be increased, and when the heater block 130 is moved away from the shower head 120, the shower head ( The temperature of 120 is lowered so that the flow rate of the cooling fluid supplied to the cooling channel 270 should be reduced (S50).
한편, 본 발명은 도시된 도면을 참고로 설명하였으나, 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 그러므로 본 발명의 범위는 첨부된 특허청구의 범위와 이와 균등한 것들에 의해 정해져야 한다.On the other hand, the present invention has been described with reference to the illustrated drawings, which are merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the scope of the present invention should be defined by the appended claims and their equivalents.
이상에서 설명한 바와 같이 본 발명에 따른 반도체소자 제조설비 및 이를 이용한 샤워헤드의 냉각방법은 히터블록의 위치에 따라 변화되는 샤워헤드의 온도변 화를 냉각유체의 유량을 조절함으로써 샤워헤드의 온도를 설정된 온도로 유지시키는 효과가 있다.As described above, the semiconductor device manufacturing apparatus and the shower head cooling method using the same according to the present invention set the temperature of the shower head by controlling the flow rate of the cooling fluid by changing the temperature of the shower head according to the position of the heater block. It has the effect of maintaining at temperature.
Claims (6)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013105730A1 (en) * | 2012-01-10 | 2013-07-18 | 주식회사 유진테크 | Cooling type showerhead and substrate processing apparatus having same |
TWI499461B (en) * | 2010-07-29 | 2015-09-11 | Hermes Epitek Corp | Showerhead |
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2005
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI499461B (en) * | 2010-07-29 | 2015-09-11 | Hermes Epitek Corp | Showerhead |
WO2013105730A1 (en) * | 2012-01-10 | 2013-07-18 | 주식회사 유진테크 | Cooling type showerhead and substrate processing apparatus having same |
TWI496943B (en) * | 2012-01-10 | 2015-08-21 | Eugene Technology Co Ltd | Showerhead having cooling system and substrate processing apparatus including the showerhead |
US9593418B2 (en) | 2012-01-10 | 2017-03-14 | Eugene Technology Co., Ltd. | Showerhead having cooling system and substrate processing apparatus including the showerhead |
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