CN104805403A - High-throughput combined semiconductor material chip synthesis equipment - Google Patents
High-throughput combined semiconductor material chip synthesis equipment Download PDFInfo
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- CN104805403A CN104805403A CN201510169448.0A CN201510169448A CN104805403A CN 104805403 A CN104805403 A CN 104805403A CN 201510169448 A CN201510169448 A CN 201510169448A CN 104805403 A CN104805403 A CN 104805403A
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Abstract
The invention discloses high-throughput combined semiconductor material chip synthesis equipment. A PLD (pulsed laser deposition) source and an EB (electron beam deposition) source are simultaneously configured in an ultrahigh vacuum chamber, and the equipment is suitable for synthesis preparation of materials including a metal alloy, metallic oxide, dielectric oxide, a nanostructure, a film and the like by means of the following advantages respectively: a stoichiometric ratio of a target source material is completely copied to a film sample according to the non-thermodynamic balance deposition process of the PLD and the EB is used for depositing a high-purity metal film and a non-absorbent material. At least ten types of different oxides, ceramic or metal target source materials are loaded simultaneously, and in-situ heating, post-processing annealing and multi-atmosphere process control as well as an inert gas glove box for sample storage and delivery are provided; cross contamination of materials is effectively avoided, the problem about delivery and storage of high-activity samples is solved, and flexibility and reliability of high-throughput combined semiconductor material chip preparation are improved greatly.
Description
Technical field
The present invention relates to the production unit of high-throughput combined semiconductor material chip, be specifically related to a kind of high-throughput combined semiconductor material chip synthesis device.
Background technology
High-new semiconductor material, comprises semiconductor/metal alloy, metal oxide, dielectric oxide, and nanostructure and thin-film material etc. are in modern optoelectronic information communication, new forms of energy, aviation, and there is extensive and important application in the field such as national defence.These materials are made up of multielement more than binary usually, and material the Nomenclature Composition and Structure of Complexes and its electricity, optics and catalytic performance etc. are closely related.Different from organic chemical synthesis, above-mentioned semiconductor material stability of material mainly controls by thermodynamics and temperature, the speed that the component of materials synthesis and formation cannot be reacted by kinetics gradual control and product, specific rule is not had to follow, this makes associated materials synthesis depend on the exploration one by one of randomness for a long time and grope, and substantially prolongs material and finds and the cycle of synthesis and cost.Secondly, modern theory research and calculated level can carry out Simulation and Prediction to the structure of novel material and physico-chemical property, but the materials synthesis speed fallen behind cannot be verified notional result in time, these high-new technology productses all seriously constrained based on high-new semiconductor material are researched and developed and technical development.
High-throughput combined semiconductor material chip synthetic technology, by carrying out thin film deposition at solid-state atom or ion at extremely short diffusion yardstick, coordinate a burst of row conversion in discrete mask plate face simultaneously, or the mask plate motion of continuously and smoothly, and corresponding technological temperature and atmosphere sequence of control, realize the preparation of high-throughput combination novel material chip, discovery and the breakneck acceleration of novel material is accelerated with index magnitude, accelerate new high-tech material synthesis and screening, and optimum synthesis technique and determine the necessary means of synthetic route.
For the physics thin film deposition means of high-throughput combined semiconductor material chip synthesis, comprise magnetic control/ion beam sputtering, electron beam deposition and pulsed laser deposition etc.Wherein, although sputtering method is widely used in metal simple-substance and multielement Compound deposition, owing to using working gas, there is secondary sputtering and cause material cross-contamination issue.Electron beam deposition adopts magnetic deflection gun directly to bombard crucible source material, pollutes little, is applicable to the deposition preparation of high pure metal film and non-absorbent material (as SiO2).Pulsed laser deposition adopts low-temperature receiver high energy pulse laser ablation target source material, under non-equilibrium thermodynamics condition by the stoichiometric ratio complete copy of target source material on sample, be applicable to complicated pluralism element Compound deposition.
Summary of the invention
For solving the problems of the technologies described above, we have proposed a kind of high-throughput combined semiconductor material chip synthesis device, its object: be simultaneously configured with pulse laser and the two deposition source of electron beam in ultrahigh vacuum(HHV) chamber, utilize the non-equilibrium thermodynamics deposition process of pulsed laser deposition (pulsed laser deposition/PLD) respectively, by the stoichiometric ratio complete copy of target source material to sample thin film, and electron beam deposition (electron beam deposition/EB) is for depositing the advantage of high pure metal film, be applicable to comprise metal alloy, metal oxide, dielectric oxide, and the material such as nanostructure and film, substantially increase handiness prepared by high-throughput combined semiconductor material chip, there is general applicability.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of high-throughput combined semiconductor material chip synthesis device, comprise the equipment that Sample Room and two sample direction of transfer centered by Sample Room are provided with, direction of transfer along the first sample transmission lever is provided with the first sample transmission lever, Sample Room and the main deposition chambers of ultrahigh vacuum(HHV) successively, and the direction of transfer along the second sample transmission lever is provided with the second sample transmission lever, aftertreatment annealing and atmosphere chamber, Sample Room and glove box successively;
The top of the main deposition chambers of ultrahigh vacuum(HHV) is provided with sample table, the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) is provided with PLD and stretches target platform, electron beam source and mask plate device, and the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) is also provided with corresponding laser entrance port, the laser scanning region of the target platform that to stretch to PLD;
The stretch distance of target platform and sample table of PLD is less than the distance of electron beam source and sample table;
Mask plate device is equiped with the transmission control device of mask plate and mask plate;
Sample Room and be equipped with push-pull valve between the main deposition chambers of ultrahigh vacuum(HHV) and glove box.
Preferably, background vacuum≤6 × 10 of the main deposition chambers of ultrahigh vacuum(HHV)
-7pa, background vacuum≤6 × 10 in Sample Room and aftertreatment annealing and atmosphere chamber
-4pa.
Preferably, the main deposition chambers of ultrahigh vacuum(HHV) is configured with at least four road gases, uses multi-channel gas flow instrument to control.
Preferably, the PLD target platform that stretches adopts canted off axis layout, and the axis, target source being namely in laser scanning region is departed from relative to sample table axis, and the stretch normal direction of target platform of PLD becomes the angle of 30 ° or 45 ° with sample table normal direction simultaneously; The PLD target platform that stretches is provided with at least five target source positions, adopts carousel-type or linear pattern arrangement, and each target source can rotation, and all target source positions can by revolve round the sun or translational motion be switched to laser scanning region; PLD stretches target platform can linear telescopic.
Preferably, the PLD target platform that stretches is positioned at the top of the main deposition chambers of ultrahigh vacuum(HHV), introduces the main deposition chambers of ultrahigh vacuum(HHV) in the horizontal direction from the side.
Preferably, electron beam source is positioned at the bottom of the main deposition chambers of ultrahigh vacuum(HHV), introduces the main deposition chambers of ultrahigh vacuum(HHV) in the horizontal direction from the side.
Preferably, electron beam source is provided with at least five bushing positions, adopts linear pattern arrangement, can carry out the transposition of straight line crucible.
Preferably, the push-pull valve between Sample Room and the main deposition chambers of ultrahigh vacuum(HHV) is ultrahigh vacuum(HHV) push-pull valve, and the push-pull valve between Sample Room and glove box is high vacuum push-pull valve.
Preferably, mask plate device introduces the main deposition chambers of ultrahigh vacuum(HHV) from the side in the horizontal direction, and the mask plate on mask plate device does horizontal shift and longitudinal displacement by the transmission control device of mask plate.
Preferably, outside the main deposition chambers of ultrahigh vacuum(HHV), be configured with the x-y two-dimensional scanner corresponding to laser entrance port, x-y two-dimensional scanner reflect after laser enter the main deposition chamber of ultrahigh vacuum(HHV) by laser entrance port in the horizontal direction.
Preferably, the main deposition chambers of ultrahigh vacuum(HHV) introduces the support and its transmission control device of being inverted sample table from top, sample table is provided with in-situ annealing device, original position swivel arrangement and longitudinal displacement device.
Preferably, the first sample transmission lever is provided with straight line pusher and original position swivel arrangement.
Preferably, the second sample transmission lever is provided with straight line pusher.
Preferably, aftertreatment annealing and atmosphere chamber, Sample Room and glove box are connected on same axis successively, and aftertreatment annealing and atmosphere chamber transmit sample by the second sample transmission lever between Sample Room and glove box.
Preferably, aftertreatment annealing and atmosphere chamber are configured with at least four road gases, carry out gas flow control respectively.
Pass through technique scheme, the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) is provided with PLD and stretches target platform, electron beam source and mask plate device, the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) is also provided with corresponding laser entrance port, the laser scanning region of the target platform that to stretch to PLD, the PLD distance of stretching bottom target platform and the main deposition chambers of ultrahigh vacuum(HHV) is greater than the distance bottom electron beam source and the main deposition chambers of ultrahigh vacuum(HHV), : in ultrahigh vacuum(HHV) chamber, be configured with pulse laser and the two deposition source of electron beam simultaneously, utilize the non-equilibrium thermodynamics deposition process of pulsed laser deposition (pulsed laser deposition/PLD) respectively, by the stoichiometric ratio complete copy of target source material to sample thin film, and electron beam deposition (electron beam deposition/EB) is for depositing the advantage of high pure metal film, be applicable to comprise metal alloy, metal oxide, dielectric oxide, and the material such as nanostructure and film, substantially increase handiness prepared by high-throughput combined semiconductor material chip, there is general applicability.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Principal diagram intention when Fig. 1 is the use PLD deposition source of a kind of high-throughput combined semiconductor material chip synthesis device disclosed in this invention;
Principal diagram intention when Fig. 2 is the use EB deposition source of a kind of high-throughput combined semiconductor material chip synthesis device disclosed in this invention;
Fig. 3 is the schematic front view of a kind of high-throughput combined semiconductor material chip synthesis device disclosed in this invention;
Fig. 4 is the schematic top plan view of a kind of high-throughput combined semiconductor material chip synthesis device disclosed in this invention.
Numeral and the corresponding component title represented by letter in figure:
1. the first sample transmission lever 2. second sample transmission lever 3. glove box 4. push-pull valve 5. Sample Room 6. aftertreatment annealing and atmosphere chamber 7. ultrahigh vacuum(HHV) main deposition chambers 8. sample table 9.PLD stretch target platform 91.x-y two-dimensional scanner 10. electron beam source 11. mask plate device 12. laser entrance port 100. laser optical path.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Below in conjunction with schematic diagram, the specific embodiment of the present invention is described in further detail.
As Fig. 1, Fig. 2, shown in Fig. 3 and Fig. 4, a kind of high-throughput combined semiconductor material chip synthesis device, comprise the equipment that Sample Room 5 and two sample direction of transfer centered by Sample Room 5 are provided with, direction of transfer along the first sample transmission lever 1 is provided with the first sample transmission lever 1 successively, Sample Room 5 and the main deposition chambers 7 of ultrahigh vacuum(HHV), direction of transfer along the second sample transmission lever 2 is provided with the second sample transmission lever 2 successively, aftertreatment annealing and atmosphere chamber 6, Sample Room 5 and glove box 3, and the direction of transfer of the first sample transmission lever 1 is mutually vertical with the direction of transfer of the second sample transmission lever 2.
The top of the main deposition chambers 7 of ultrahigh vacuum(HHV) is provided with sample table 8, the sidewall of the main deposition chambers 7 of ultrahigh vacuum(HHV) is provided with PLD and stretches target platform 9, electron beam source 10 and mask plate device 11, the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) 7 is also provided with corresponding laser entrance port 12, the laser scanning region of the target platform 9 that to stretch to PLD, the x-y two-dimensional scanner 91 corresponding to laser entrance port 12 is configured with outside the main deposition chambers of ultrahigh vacuum(HHV) 7, x-y two-dimensional scanner 91 reflect after laser enter in the main deposition chambers 7 of ultrahigh vacuum(HHV) by laser entrance port 12 in the horizontal direction, make the angle of introducing laser larger.
Stretch target platform 9 and the distance of sample table 8 of PLD is less than the distance of electron beam source 10 and sample table 8, namely the PLD target platform 9 that stretches is positioned at the top of the main deposition chambers 7 of ultrahigh vacuum(HHV), electron beam source 10 is positioned at the bottom of the main deposition chambers 7 of ultrahigh vacuum(HHV), and PLD stretches, target platform 9 and electron beam source 10 introduce the main deposition chambers 7 of ultrahigh vacuum(HHV) all from the side in the horizontal direction.
Mask plate device 11 introduces the main deposition chambers 7 of ultrahigh vacuum(HHV) from the side in the horizontal direction, mask plate device is equiped with the transmission control device of mask plate and mask plate, the mask plate on mask plate device 11 does horizontal shift and longitudinal displacement by the transmission control device of mask plate.
Background vacuum≤6 × 10 of the main deposition chambers 7 of ultrahigh vacuum(HHV)
-7pa, background vacuum≤6 × 10 in Sample Room 5 and aftertreatment annealing and atmosphere chamber 6
-4pa, Sample Room 5 and be equipped with push-pull valve 4 between the main deposition chambers 7 of ultrahigh vacuum(HHV) and glove box 3, wherein according to practical situation needs, push-pull valve 4 between Sample Room 5 and the main deposition chambers 7 of ultrahigh vacuum(HHV) is ultrahigh vacuum(HHV) push-pull valve, and the push-pull valve 4 between Sample Room 5 and glove box 3 is high vacuum push-pull valve.
The main deposition chambers 7 of ultrahigh vacuum(HHV) is configured with at least four road gases, multi-channel gas flow instrument is used to control, aftertreatment annealing and atmosphere chamber 6 are configured with at least four road gases, carry out gas flow control respectively, ensure that the main deposition chambers 7 of ultrahigh vacuum(HHV) and aftertreatment annealing and atmosphere chamber 6 can realize atmosphere needed for particular deposition technique and partial pressure.
The PLD target platform 9 that stretches adopts canted off axis layout, and the axis, target source being namely in laser scanning region is departed from relative to sample table axis, and the stretch normal direction of target platform 9 of PLD becomes the angle of 30 ° or 45 ° with sample table normal direction simultaneously; The PLD target platform 9 that stretches is provided with at least five target source positions, adopts carousel-type or linear pattern arrangement, and each target source can rotation, and all target source positions can by revolve round the sun or translational motion be switched to laser scanning region, and PLD stretches target platform 9 can linear telescopic.
Electron beam source 10 is provided with at least five bushing positions, adopts linear pattern arrangement, can carry out the transposition of straight line crucible.
Be configured with outside the main deposition chambers of ultrahigh vacuum(HHV) 7 x-y two-dimensional scanner 91, the x-y two-dimensional scanner 91 corresponding to laser entrance port 12 reflect after laser entered in the main deposition chambers 7 of ultrahigh vacuum(HHV) by laser entrance port 12 in the horizontal direction.
The main deposition chambers 7 of ultrahigh vacuum(HHV) introduces the support and its transmission control device of being inverted sample table 8 from top, sample table 8 is provided with in-situ annealing device, original position swivel arrangement and longitudinal displacement device, ensure that sample table 8 has in-situ annealing, original position rotates and the function of longitudinal displacement.
First sample transmission lever 1 is provided with straight line pusher and original position swivel arrangement, ensure that the first sample transmission lever 1 has straight line and pushes and original position spinfunction.
Second sample transmission lever 2 is provided with straight line pusher, ensure that the second sample transmission lever 2 has the function of straight line propelling movement.
Aftertreatment annealing and atmosphere chamber 6, Sample Room 5 and glove box 3 are connected on same axis successively, and aftertreatment annealing and atmosphere chamber 6 transmit sample by the second sample transmission lever 2 between Sample Room 5 and glove box 3.
Wherein, when in the main deposition chambers 7 of ultrahigh vacuum(HHV) use PLD stretch target platform 9 as deposition source time, the PLD target platform 9 that stretches stretches in the main deposition chambers 7 of ultrahigh vacuum(HHV), x-y two-dimensional scanner 91 pairs of incident lasers regulate, form laser optical path 100, make laser be incident to PLD in the horizontal direction from laser entrance port 12 and stretch the laser scanning region of target platform 9; When using electron beam source 10 as deposition source in the main deposition chambers 7 of ultrahigh vacuum(HHV), the PLD target platform 9 that stretches is pushed out to outside the main deposition chambers 7 of ultrahigh vacuum(HHV), and electron beam source 10 carries out EB deposition.
The working process of this high-throughput combined semiconductor material chip synthesis device:
A. equipment initial state is: background vacuum≤6 × 10 of the main deposition chambers 7 of ultrahigh vacuum(HHV)
-7pa, background vacuum≤6 × 10 in Sample Room 5 and aftertreatment annealing and atmosphere chamber 6
-4pa, the first sample transmission lever 1 is retracted into Sample Room 5 completely, and the second sample transmission lever 2 is retracted into aftertreatment annealing and atmosphere chamber 6 completely, and sample table 8 is in longitudinal extreme higher position, and mask plate is in longitudinal extreme lower position; Sample Room 5 is isolated respectively by ultrahigh vacuum(HHV) push-pull valve and high vacuum push-pull valve with the main deposition chambers 7 of ultrahigh vacuum(HHV) and glove box 3.
B, use above-mentioned first sample transmission lever 1 carry out between Sample Room 5 and the main deposition chambers 7 of ultrahigh vacuum(HHV) sample fixing with transmit, be specially:
First, under ultrahigh vacuum(HHV) push-pull valve and high vacuum push-pull valve all keep closing condition, open Sample Room 5, sample is loaded into the first sample transmission lever 1 from air.
Secondly, close Sample Room 5 and vacuum pumping is carried out, to background vacuum≤6 × 10 to it
-4pa, opened condition is at ultrahigh vacuum(HHV) push-pull valve, sample table 8 bottom surface is down to and the first sample transmission lever 1 (containing sample carrier) parallel position, uses the first sample transmission lever 1 to transmit sample to the main deposition chambers 7 of ultrahigh vacuum(HHV), and loading is fixed in sample table 8.
Then, exit the first sample transmission lever 1 having unloaded sample carrier completely from the main deposition chambers 7 of ultrahigh vacuum(HHV), in ultrahigh vacuum(HHV) push-pull valve closing condition, vacuum pumping is carried out, to background vacuum≤6 × 10 to the main deposition chambers 7 of ultrahigh vacuum(HHV)
-7pa.
C, use mask plate device 11 and kinetic control system, carry out the lengthwise position lift adjustment of mask plate, regulate, be specially with level attitude:
Before single thin film deposition, horizontal adjustment selects mask plate to be positioned at immediately below sample, longitudinally regulates mask plate and sample to fit.
After single thin film deposition, longitudinally regulate mask plate and sample separation.
D, use one of PLD target source material of stretching in target platform 9 of PLD, or use one of EB crucible material in electron beam source 10, carry out thin film deposition.
E, use sample table 8, respectively during single thin film deposition, carry out In Situ Heating to print.After single thin film deposition, and after mask plate and sample separation, sample is carried out to the operations such as original position rotation.
If thin film deposition is carried out in one of PLD target source that first F multilayer film deposition uses PLD to stretch in target platform 9, when lower thin film deposition needs to use one of EB crucible material in electron beam source 10 to carry out, described PLD target source translational movement Controlling System is first used to make the PLD target platform 9 that stretches exit the main deposition chambers 7 of ultrahigh vacuum(HHV), make the main deposition chambers of ultrahigh vacuum(HHV) 7 li only have electron beam source 10, then carry out EB deposition.
G, in one-time process, selecting at least ten kinds of different target source materials, by repeating above-mentioned C-E, carrying out multilayer film deposition.
H, multilayer film deposition finishes, and uses support and the kinetic control system thereof of described mask plate, sequence of steps as described in C and D, carries out metal electrode deposition.
I, use described in the first sample transmission lever 1, as described in B, unload sample carrier to Sample Room 5 from the main deposition chambers 7 of ultrahigh vacuum(HHV).
J, use described in the second sample transmission lever 2, shift sample carrier from the first sample transmission lever 1, and load be fixed on aftertreatment annealing and atmosphere chamber 6, carry out aftertreatment annealing.This step synchronously can also carry out anneal under single atmosphere.Annealing is finished, and sample cools in original position.
K, use described in the second sample transmission lever 2, unload from annealing furnace the sample carrier cooled, in high vacuum push-pull valve opened condition, sample carrier pushed to glove box 3 and carry out unloading preservation, or carry out subsequent operations.
L, described second sample transmission lever 2 is return aftertreatment annealing and atmosphere chamber 6 completely, close high vacuum push-pull valve, vacuum pumping is carried out to Sample Room 5 and the aftertreatment annealing connected and atmosphere chamber 6.Device systems gets back to initial state described in A.
This high-throughput combined semiconductor material chip synthesis device is being used alone working process when PLD target origin system carries out larger area thin film deposition:
A, equipment initial state are: background vacuum≤6 × 10 of the main deposition chambers 7 of ultrahigh vacuum(HHV)
-7pa, background vacuum≤6 × 10 in Sample Room 5 and aftertreatment annealing and atmosphere chamber 6
-4pa, the first sample transmission lever 1 is retracted into Sample Room 5 completely, and the second sample transmission lever 2 is retracted into aftertreatment annealing and atmosphere chamber 6 completely, and sample table 8 is in longitudinal extreme higher position, and mask plate exits main deposition chambers; Sample Room 5 is isolated respectively by ultrahigh vacuum(HHV) push-pull valve and high vacuum push-pull valve with the main deposition chambers 7 of ultrahigh vacuum(HHV) and glove box 3.
B, use above-mentioned first sample transmission lever 1 carry out between Sample Room 5 and the main deposition chambers 7 of ultrahigh vacuum(HHV) sample fixing with transmit, be specially:
First, under ultrahigh vacuum(HHV) push-pull valve and high vacuum push-pull valve all keep closing condition, open Sample Room 5, sample is loaded into the first sample transmission lever 1 from air.
Secondly, close Sample Room 5 and vacuum pumping is carried out, to background vacuum≤6 × 10 to it
-4pa, opened condition is at ultrahigh vacuum(HHV) push-pull valve, sample table 8 bottom surface is down to and the first sample transmission lever 1 (containing sample carrier) parallel position, uses the first sample transmission lever 1 to transmit sample to the main deposition chambers 7 of ultrahigh vacuum(HHV), and loading is fixed in sample table 8.
Then, exit the first sample transmission lever 1 having unloaded sample carrier completely from the main deposition chambers 7 of ultrahigh vacuum(HHV), in ultrahigh vacuum(HHV) push-pull valve closing condition, vacuum pumping is carried out, to background vacuum≤6 × 10 to the main deposition chambers 7 of ultrahigh vacuum(HHV)
-7pa.
C, use sample table 8, carry out continuous rotation to print during thin film deposition.
One of PLD target source material that D, use PLD stretch in target platform 9, and use x-y two dimensional laser scanning device 91 to carry out two-dimensional scan to selected target source material surface, carry out single thin film deposition.
E, in one-time process, selecting at least five kinds of different PLD target source materials, by repeating above-mentioned C and D, carrying out multilayer film deposition.
F, use the first sample transmission lever 1, as described in B, unload sample carrier to Sample Room 5 from the main deposition chambers 7 of ultrahigh vacuum(HHV).
J, use described in the second sample transmission lever 2, shift sample carrier from the first sample transmission lever 1, and load be fixed on aftertreatment annealing and atmosphere chamber 6, carry out aftertreatment annealing.This step synchronously can also carry out anneal under single atmosphere.Annealing is finished, and sample cools in original position.
K, use described in the second sample transmission lever 2, unload from annealing furnace the sample carrier cooled, in high vacuum push-pull valve opened condition, sample carrier pushed to glove box 3 and carry out unloading preservation, or carry out subsequent operations.
L, described second sample transmission lever 2 is return aftertreatment annealing and atmosphere chamber 6 completely, close high vacuum push-pull valve, vacuum pumping is carried out to Sample Room 5 and the aftertreatment annealing connected and atmosphere chamber 6.Device systems gets back to initial state described in A.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, and without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (15)
1. a high-throughput combined semiconductor material chip synthesis device, comprise the equipment that Sample Room (5) and two sample direction of transfer centered by Sample Room (5) are provided with, it is characterized in that, direction of transfer along the first sample transmission lever (1) is provided with the first sample transmission lever (1) successively, Sample Room (5) and the main deposition chambers of ultrahigh vacuum(HHV) (7), direction of transfer along the second sample transmission lever (2) is provided with the second sample transmission lever (2) successively, aftertreatment annealing and atmosphere chamber (6), Sample Room (5) and glove box (3),
The top of the main deposition chambers of ultrahigh vacuum(HHV) (7) is provided with sample table (8), the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) (7) is provided with PLD and stretches target platform (9), electron beam source (10) and mask plate device (11), and the sidewall of the main deposition chambers of ultrahigh vacuum(HHV) (7) is also provided with the corresponding laser entrance port (12) in laser scanning region of the target platform (9) that to stretch with PLD;
The stretch distance of target platform (9) and sample table (8) of PLD is less than the distance of electron beam source (10) and sample table (8);
Mask plate device (11) is equiped with the transmission control device of mask plate and mask plate;
Sample Room (5) and be equipped with push-pull valve (4) between the main deposition chambers of ultrahigh vacuum(HHV) (7) and glove box (3).
2. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, is characterized in that, background vacuum≤6 × 10 of the main deposition chambers of ultrahigh vacuum(HHV) (7)
-7pa, background vacuum≤6 × 10 of Sample Room (5) and aftertreatment annealing and atmosphere chamber (6)
-4pa.
3. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, the main deposition chambers of ultrahigh vacuum(HHV) (7) is configured with at least four road gases, uses multi-channel gas flow instrument to control.
4. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, the PLD target platform (9) that stretches adopts canted off axis layout, namely the axis, target source being in laser scanning region is departed from relative to sample table axis, and simultaneously the stretch normal direction of target platform (9) of PLD becomes the angle of 30 ° or 45 ° with sample table normal direction; The PLD target platform (9) that stretches is provided with at least five target source positions, adopts carousel-type or linear pattern arrangement, and each target source can rotation, and all target source positions can by revolve round the sun or translational motion be switched to laser scanning region; PLD stretches target platform (9) can linear telescopic.
5. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, the PLD target platform (9) that stretches is positioned at the top of the main deposition chambers of ultrahigh vacuum(HHV) (7), introduces the main deposition chambers of ultrahigh vacuum(HHV) (7) in the horizontal direction from the side.
6. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, electron beam source (10) is positioned at the bottom of the main deposition chambers of ultrahigh vacuum(HHV) (7), introduces the main deposition chambers of ultrahigh vacuum(HHV) (7) in the horizontal direction from the side.
7. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, electron beam source (10) is provided with at least five bushing positions, adopts linear pattern arrangement, can carry out the transposition of straight line crucible.
8. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 2, it is characterized in that, push-pull valve (4) between Sample Room (5) and the main deposition chambers of ultrahigh vacuum(HHV) (7) is ultrahigh vacuum(HHV) push-pull valve, and the push-pull valve (4) between Sample Room (5) and glove box (3) is high vacuum push-pull valve.
9. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, mask plate device (11) introduces the main deposition chambers of ultrahigh vacuum(HHV) (7) from the side in the horizontal direction, and the mask plate on mask plate device (11) does horizontal shift and longitudinal displacement by the transmission control device of mask plate.
10. a kind of high-throughput combined semiconductor material chip synthesis device according to claim 1, it is characterized in that, the main deposition chambers of ultrahigh vacuum(HHV) (7) outside is configured with and laser entrance port (12) corresponding x-y two-dimensional scanner (91), x-y two-dimensional scanner (91) reflect after laser entered in the main deposition chambers of ultrahigh vacuum(HHV) (7) by laser entrance port (12) in the horizontal direction.
11. a kind of high-throughput combined semiconductor material chip synthesis devices according to claim 1, it is characterized in that, the main deposition chambers of ultrahigh vacuum(HHV) (7) introduces the support and its transmission control device of being inverted sample table (8) from top, sample table (8) is provided with in-situ annealing device, original position swivel arrangement and longitudinal displacement device.
12. a kind of high-throughput combined semiconductor material chip synthesis devices according to claim 1, it is characterized in that, the first sample transmission lever (1) is provided with straight line pusher and original position swivel arrangement.
13. a kind of high-throughput combined semiconductor material chip synthesis devices according to claim 1, it is characterized in that, the second sample transmission lever (2) is provided with straight line pusher.
14. a kind of high-throughput combined semiconductor material chip synthesis devices according to claim 1, it is characterized in that, aftertreatment annealing and atmosphere chamber (6), Sample Room (5) and glove box (3) are connected on same axis successively, and aftertreatment annealing and atmosphere chamber (6) transmit sample by the second sample transmission lever (2) between Sample Room (5) and glove box (3).
15. a kind of high-throughput combined semiconductor material chip synthesis devices according to claim 1, it is characterized in that, aftertreatment annealing and atmosphere chamber (6) are configured with at least four road gases, carry out gas flow control respectively.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142457A (en) * | 2017-04-19 | 2017-09-08 | 电子科技大学 | A kind of magnetron sputtering inclined deposition plating apparatus |
| CN107238726A (en) * | 2017-06-19 | 2017-10-10 | 北京大学 | A kind of multiple degrees of freedom sample transfer device of ultra-high vacuum environment |
| CN108034928A (en) * | 2017-12-04 | 2018-05-15 | 北京科技大学 | Devices and methods therefor prepared by a kind of film high throughput of controllable tissue |
| CN108193175A (en) * | 2017-11-23 | 2018-06-22 | 深圳市矩阵多元科技有限公司 | The method that the synthetic material of a variety of heterogeneity contents is prepared with batch |
| CN109355621A (en) * | 2018-12-21 | 2019-02-19 | 张晓军 | It is a kind of to match controllable large area high throughput laminated film synthesizer and method |
| CN109580325A (en) * | 2018-11-17 | 2019-04-05 | 金华职业技术学院 | A kind of method of sedimentation preparation of film sample |
| WO2019100292A1 (en) * | 2017-11-23 | 2019-05-31 | 深圳市矩阵多元科技有限公司 | Method for preparing various synthetic materials having different component contents in same batch |
| CN109943886A (en) * | 2017-12-21 | 2019-06-28 | 常州国成新材料科技有限公司 | A kind of Film patterning method and device of high vacuum system |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107142457A (en) * | 2017-04-19 | 2017-09-08 | 电子科技大学 | A kind of magnetron sputtering inclined deposition plating apparatus |
| CN107238726A (en) * | 2017-06-19 | 2017-10-10 | 北京大学 | A kind of multiple degrees of freedom sample transfer device of ultra-high vacuum environment |
| CN107238726B (en) * | 2017-06-19 | 2018-07-13 | 北京大学 | A kind of multiple degrees of freedom sample transfer device of ultra-high vacuum environment |
| CN108193175A (en) * | 2017-11-23 | 2018-06-22 | 深圳市矩阵多元科技有限公司 | The method that the synthetic material of a variety of heterogeneity contents is prepared with batch |
| WO2019100292A1 (en) * | 2017-11-23 | 2019-05-31 | 深圳市矩阵多元科技有限公司 | Method for preparing various synthetic materials having different component contents in same batch |
| CN108034928A (en) * | 2017-12-04 | 2018-05-15 | 北京科技大学 | Devices and methods therefor prepared by a kind of film high throughput of controllable tissue |
| CN109943886A (en) * | 2017-12-21 | 2019-06-28 | 常州国成新材料科技有限公司 | A kind of Film patterning method and device of high vacuum system |
| CN109580325A (en) * | 2018-11-17 | 2019-04-05 | 金华职业技术学院 | A kind of method of sedimentation preparation of film sample |
| CN109580325B (en) * | 2018-11-17 | 2023-08-29 | 金华职业技术学院 | Method for preparing film sample by deposition |
| CN109355621A (en) * | 2018-12-21 | 2019-02-19 | 张晓军 | It is a kind of to match controllable large area high throughput laminated film synthesizer and method |
| CN109355621B (en) * | 2018-12-21 | 2024-03-22 | 深圳市矩阵多元科技有限公司 | Large-area high-flux composite film synthesizing device and method with controllable proportion |
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