CN104803347B - A kind of Mo Base Metal film etching method - Google Patents
A kind of Mo Base Metal film etching method Download PDFInfo
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- CN104803347B CN104803347B CN201510211321.0A CN201510211321A CN104803347B CN 104803347 B CN104803347 B CN 104803347B CN 201510211321 A CN201510211321 A CN 201510211321A CN 104803347 B CN104803347 B CN 104803347B
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Abstract
The lithographic method of the Mo Base Metal thin film that the present invention provides, sequentially forms SiO the most on a semiconductor substrate2Insulating barrier, silicon-based dielectric layer, AlN layer and Mo base metal layer；Then to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process；Secondly using dry etch process to perform etching Mo base metal layer, the graphic point after etching is 10 to 45 °；Finally use dry method to remove photoresist and wet method is removed photoresist, cleaning treatment.The present invention uses dry etching low-angle Mo base film figure, compared with wide-angle figure, has more preferable step coverage and is of value to the growth of high-quality AlN thin film, can promote the raising of FBAR device performance.
Description
Technical field
The present invention relates to MEMS manufacturing technology field, a kind of Mo Base Metal film etching method in developing particularly to thin-film bulk acoustic wave filter (FBAR) device.
Background technology
FBAR is the RF wave filter of a kind of function admirable, have that volume is little, Q-value is high, operating frequency is high, it is big to bear power, conversion efficiency is high and with the feature such as semiconductor technology is compatible, more conform to the rigors of Modern wireless communication field application, become a focus of such devices research and development in recent years.
Shown by numerous studies, either the performance of metal own, or with the matching effect aspect of piezoelectric layer AlN thin film, Mo(metal molybdenum) Base Metal is that in FBAR device, preferable electrode material selects.Existing Mo Base Metal film etching method is in FBAR device development process, method or the method for Mo Base Metal of etching larger angle frequently with wet etching, there is the defects such as etch rate is slow, uncontrollable, Sidewall angles relatively big, sidewall roughness in the method using wet etching, the Mo Base Metal of etching larger angle exists that AlN thin film spreadability is poor, growth quality is poor and the defects such as stress is big at step.
For above-mentioned wide-angle Mo Base Metal film etching method defect, existing lithographic method does not has effective solution route so that it is poor that existing Mo Base Metal film etching method still exists Step Coverage, the problem that the growth of AIN thin film is poor.
Summary of the invention
For above-mentioned deficiency present in prior art, the purpose of patent of the present invention is how to provide a kind of Mo Base Metal film etching method, under forming intact FBAR device architecture premise, there is more preferable Step Coverage and the AlN thin film of growth high-quality, FBAR device performance can be improved simultaneously, poor at Step Coverage for solve that existing Mo Base Metal film etching method deposits, that the growth of AIN thin film is poor problem.
For solving above-mentioned technical problem, it is achieved goal of the invention, the technical solution used in the present invention is as follows:
The lithographic method of a kind of Mo Base Metal thin film, sequentially forms SiO the most on a semiconductor substrate2Insulating barrier, silicon-based dielectric layer, AlN layer and Mo base metal layer；Then to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process；Secondly using dry etch process to perform etching Mo base metal layer, the graphic point after etching is 10 ° to 45 °；Finally use dry method to remove photoresist and wet method is removed photoresist, cleaning treatment.
Further, described SiO2Insulating barrier uses LPCVD technique to prepare, and its thickness is 800 to 1200 nanometers.
Further, described silicon-based dielectric layer is combined by one or more thin-film materials in polysilicon, non-crystalline silicon, silicon dioxide, silicon nitride and is formed；Described polysilicon uses the growth of LPCVD technique, and its thickness is 500 to 1500 nanometers；Described non-crystalline silicon uses LPCVD technique or pecvd process growth, and its thickness is 500 to 1500 nanometers；Described silicon dioxide uses LPCVD technique or pecvd process growth, and its thickness is 50 to 300 nanometers；Described silicon nitride uses LPCVD or pecvd process growth, and its thickness is 50 to 300 nanometers.
Further, described AlN layer uses magnetron sputtering technique to prepare, and its thickness is 50 to 150 nanometers.
Further, described Mo base metal layer is formed by one or more combinations of materials in Mo, MoW, MoN, MoAlN.
Further, described to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process, and its photoresist type is AZ series, and its thickness is 1 to 5 micron, and after bake temperature is 110 to 160 DEG C.
Further, Mo base metal layer is performed etching by described employing dry etch process, is to use chloro or fluorine-based etching gas to perform etching Mo base metal layer.
Further, described chloro or fluorine-based etching gas are Cl2、BCl3、CHF3、SF6、CF4、O2, one or more combination of gases in Ar are formed.
Further, described Cl2Flow is 0 to 100sccm, described BCl3Flow is 0 to 100sccm, described CHF3Flow is 0 to 100sccm, described SF6Flow is 0 to 100sccm, described CF4Flow is 0 to 100sccm, described O2Flow is 0 to 200sccm, and described Ar flow is 0 to 80sccm.
Further, the dry etch process condition that Mo base metal layer is performed etching by described employing dry etch process is: upper electrode power is 0 to 3000W, lower electrode power is 20 to 350W, pressure is 8 to 100mT, chloro or the temperature that fluorine base gas total flow is 50 ~ 200sccm, cavity and electrode are 50 to 100 degrees Celsius.
Compared to prior art, present invention have the advantage that
1, the present invention uses dry etching low-angle Mo base film figure, compared with wide-angle figure, has more preferable step coverage and is of value to the growth of high-quality AlN thin film, can promote the raising of FBAR device performance.
2, the present invention dry etch process is applied to FBAR device develop in low-angle Mo base film etching, compared with wet etching, faster, sidewall is more smooth for etch rate, and angle be easily controlled, adjustable.
3, a kind of low-angle Mo Base Metal film etching method during the FBAR device that the present invention proposes is developed, with existing MEMS, semiconductor technology is compatible.
Accompanying drawing explanation
Fig. 1 is the flow chart of the Mo Base Metal film etching method that the present invention provides.
Fig. 2 is to form SiO2The membrane structure schematic diagram of the Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer.
After Fig. 3 is employing dry etching Mo Base Metal thin film, the membrane structure schematic diagram of Semiconductor substrate.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment:
A kind of lithographic method of Mo Base Metal thin film, step 1 as shown in Figure 1: sequentially form SiO on a semiconductor substrate2Insulating barrier, silicon-based dielectric layer, AlN layer and Mo base metal layer；Step 2: to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process；Step 3: using dry etch process to perform etching Mo base metal layer, the graphic point after etching is 10 ° to 45 °；Step 4: use dry method to remove photoresist and wet method is removed photoresist, cleaning treatment.Wherein, Fig. 2 is for forming SiO2The membrane structure schematic diagram of the Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer, 5 is silicon-based semiconductor substrate, and 6 is SiO2Insulating barrier, 7 is silicon-based dielectric layer, and 8 is AlN layer, and 9 is Mo base metal layer.
Low-angle in the present embodiment refers to that the graphic point after etching is 10 ° to 45 °.The present embodiment uses dry etching low-angle Mo base film figure, compared with wide-angle figure, has more preferable step coverage and is of value to the growth of high-quality AlN thin film, can promote the raising of FBAR device performance.It addition, the present invention dry etch process is applied to FBAR device develop in low-angle Mo base film etching, compared with wet etching, faster, sidewall is more smooth for etch rate, and angle be easily controlled, adjustable.
Low-angle Mo Base Metal can have more preferable step coverage and be of value to the growing principle of high-quality AlN thin film: owing to AlN is polycrystalline structure, lower film superficial growth can be perpendicular to, when lower floor Mo Base Metal Sidewall angles is less, the AlN thin film direction of growth at step is the slowest, connectivity is good, and stress is less.When lower floor Mo Base Metal Sidewall angles is relatively big (in traditional lithographic method, graphic point after etching is 90 °) time, then the AlN thin film direction of growth at step is the biggest, easily in formation crack, step top, constantly having the AlN thin film that other directions grow, stress is bigger, it is easily broken off, and wrinkle phenomenon is easily formed in step bottom, stress is relatively big, causes AlN thin film alignment poor.So, low-angle Mo Base Metal can have more preferable step coverage and be of value to the growth of high-quality AlN thin film, thus promotes the raising of FBAR device performance.
Why graphic point after etching selects 10 ° to be because to 45 °: the etching angle less than 10 ° is difficult in technique, and when the later stage is applied, and the unnecessary limit of side surface of thin film is oversize, and area occupied is bigger.Etching angle AlN thin film more than 45 ° is easily in formation crack, step top, and stress is relatively big, is easily broken off, and easily forms wrinkle phenomenon in step bottom, causes AlN thin film alignment poor.
Described SiO2Insulating barrier uses the abbreviation of LPCVD(i.e. Low-pressure CVD, Low Pressure Chemical Vapor Deposition) prepared by technique, and its thickness is 800 to 1200 nanometers.Which increase earth resistance, reduce energy loss during device work.
Described silicon-based dielectric layer is combined by one or more thin-film materials in polysilicon, non-crystalline silicon, silicon dioxide, silicon nitride and is formed；Described polysilicon uses the growth of LPCVD technique, and its thickness is 500 to 1500 nanometers；Described non-crystalline silicon uses LPCVD technique or the PECVD(i.e. abbreviation of Plasma-enhancedCVD, plasma reinforced chemical vapour deposition method) technique growth, its thickness is 500 to 1500 nanometers；Described silicon dioxide uses LPCVD technique or pecvd process growth, and its thickness is 50 to 300 nanometers；Described silicon nitride uses LPCVD or pecvd process growth, and its thickness is 50 to 300 nanometers.
Described AlN layer uses magnetron sputtering technique to prepare, and its thickness is 50 to 150 nanometers, is so conducive to the Mo Base Metal orientation of growth to select, thus grows the AlN thin film of high-quality, improves FBAR device performance.
Described Mo base metal layer is formed by one or more combinations of materials in Mo, MoW, MoN, MoAlN.
Described to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process, and its photoresist type is AZ series, and its thickness is 1 to 5 micron, and after bake temperature is 110 to 160 DEG C.So can preferably form less photoetching offset plate figure Sidewall angles, so that the realization of low-angle Mo Base Metal film pattern is easier to.
Mo base metal layer is performed etching by described employing dry etch process, is to use chloro or fluorine-based etching gas to perform etching Mo base metal layer.
Described chloro or fluorine-based etching gas are Cl2、BCl3、CHF3、SF6、CF4、O2, one or more combination of gases in Ar are formed.
Described Cl2Flow is 0 to 100sccm, described BCl3Flow is 0 to 100sccm, described CHF3Flow is 0 to 100sccm, described SF6Flow is 0 to 100sccm, described CF4Flow is 0 to 100sccm, described O2Flow is 0 to 200sccm, and described Ar flow is 0 to 80sccm.Why the starting point of above-mentioned gas flow is 0, is because some equipment and technical process may not use this gas, and select other gases in these gases as etching technics gas.
After Fig. 3 is for using dry etching Mo Base Metal thin film, the membrane structure schematic diagram of Semiconductor substrate, 5 ＇ are the silicon-based semiconductor substrate after etching, and 6 ＇ are the SiO after etching2Insulating barrier, 7 ＇ are the silicon-based dielectric layer after etching, and 8 ＇ are the AlN layer after etching, and 9 ＇ are the Mo base metal layer after etching.
The dry etch process condition that Mo base metal layer is performed etching by described employing dry etch process is: upper electrode power is 0 to 3000W, lower electrode power is 20 to 350W, pressure is 8 to 100mT, chloro or the temperature that fluorine base gas total flow is 50 ~ 200sccm, cavity and electrode are 50 to 100 degrees Celsius.Upper electrode power Main Function is the process gas that ionization is passed through in equipment cavity, affects the concentration of chamber plasma, can have a certain impact etching effect；Ion after ionization is mainly played the effect of acceleration by lower electrode power, also has certain ionization effect simultaneously, and power is the least or too big, and etching angle can be caused less than normal or bigger than normal；On the one hand plasma and the concentration of gas in chamber pressure major control cavity, when pressure is less, affect gas ionization build-up of luminance effect, another aspect can affect corrasion ion number, etched features angle is had a certain impact；Chloro or fluorine base gas total flow mainly play the selection of the gas source of corrasion, i.e. have to select a certain amount of etching gas；The temperature of cavity and electrode is mainly for etching print and the protection of photoresist and the guarantee to processing chamber environment.
Finally illustrate is, above example is only in order to illustrate technical scheme and unrestricted, although the present invention being described in detail with reference to preferred embodiment, it will be understood by those within the art that, technical scheme can be modified or equivalent, without deviating from objective and the scope of technical solution of the present invention, it all should be contained in the middle of scope of the presently claimed invention.
Claims (9)
1. the lithographic method of a Mo Base Metal thin film, it is characterised in that sequentially form SiO the most on a semiconductor substrate2Insulating barrier, silicon-based dielectric layer, AlN layer and Mo base metal layer；Then to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process；Secondly using dry etch process to perform etching Mo base metal layer, the graphic point after etching is 10 ° to 45 °；Finally use dry method to remove photoresist and wet method is removed photoresist, cleaning treatment；
The dry etch process condition that Mo base metal layer is performed etching by described employing dry etch process is: upper electrode power is 0 to 3000W, lower electrode power is 20 to 350W, pressure is 8 to 100mT, chloro or the temperature that fluorine base gas total flow is 50 ~ 200sccm, cavity and electrode are 50 to 100 degrees Celsius.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that described SiO2Insulating barrier uses LPCVD technique to prepare, and its thickness is 800 to 1200 nanometers.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that described silicon-based dielectric layer is combined by one or more thin-film materials in polysilicon, non-crystalline silicon, silicon dioxide, silicon nitride and formed；Described polysilicon uses the growth of LPCVD technique, and its thickness is 500 to 1500 nanometers；Described non-crystalline silicon uses LPCVD technique or pecvd process growth, and its thickness is 500 to 1500 nanometers；Described silicon dioxide uses LPCVD technique or pecvd process growth, and its thickness is 50 to 300 nanometers；Described silicon nitride uses LPCVD or pecvd process growth, and its thickness is 50 to 300 nanometers.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that described AlN layer uses magnetron sputtering technique to prepare, and its thickness is 50 to 150 nanometers.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that described Mo base metal layer is formed by one or more combinations of materials in Mo, MoW, MoN, MoAlN.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that described to forming SiO2Semiconductor substrate after insulating barrier, silicon-based dielectric layer, AlN layer, Mo base metal layer carries out photoetching process, and its photoresist type is AZ series, and its thickness is 1 to 5 micron, and after bake temperature is 110 to 160 DEG C.
The lithographic method of Mo Base Metal thin film the most according to claim 1, it is characterised in that Mo base metal layer is performed etching by described employing dry etch process, is to use chloro or fluorine-based etching gas to perform etching Mo base metal layer.
The lithographic method of Mo Base Metal thin film the most according to claim 7, it is characterised in that described chloro or fluorine-based etching gas are Cl2、BCl3、CHF3、SF6、CF4、O2, one or more combination of gases in Ar are formed.
The lithographic method of Mo Base Metal thin film the most according to claim 8, it is characterised in that described Cl2Flow is 0 to 100sccm, described BCl3Flow is 0 to 100sccm, described CHF3Flow is 0 to 100sccm, described SF6Flow is 0 to 100sccm, described CF4Flow is 0 to 100sccm, described O2Flow is 0 to 200sccm, and described Ar flow is 0 to 80sccm.
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