CN104795476A - 一种氮化镓发光二极管的外延结构 - Google Patents
一种氮化镓发光二极管的外延结构 Download PDFInfo
- Publication number
- CN104795476A CN104795476A CN201510202494.6A CN201510202494A CN104795476A CN 104795476 A CN104795476 A CN 104795476A CN 201510202494 A CN201510202494 A CN 201510202494A CN 104795476 A CN104795476 A CN 104795476A
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- Prior art keywords
- gallium nitride
- layer
- doped layer
- type
- quantum well
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 98
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 239000011777 magnesium Substances 0.000 claims abstract description 24
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 230000003139 buffering effect Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510202494.6A CN104795476B (zh) | 2015-04-24 | 2015-04-24 | 一种氮化镓发光二极管的外延结构 |
Applications Claiming Priority (1)
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CN201510202494.6A CN104795476B (zh) | 2015-04-24 | 2015-04-24 | 一种氮化镓发光二极管的外延结构 |
Publications (2)
Publication Number | Publication Date |
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CN104795476A true CN104795476A (zh) | 2015-07-22 |
CN104795476B CN104795476B (zh) | 2018-01-30 |
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CN201510202494.6A Expired - Fee Related CN104795476B (zh) | 2015-04-24 | 2015-04-24 | 一种氮化镓发光二极管的外延结构 |
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CN (1) | CN104795476B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106025023A (zh) * | 2016-06-22 | 2016-10-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN107808604A (zh) * | 2017-10-05 | 2018-03-16 | 友达光电股份有限公司 | 显示装置及其控制方法 |
CN108878603A (zh) * | 2018-07-03 | 2018-11-23 | 贵州杰芯光电科技有限公司 | 一种氮化镓led的外延制备方法 |
CN109473525A (zh) * | 2018-10-31 | 2019-03-15 | 华灿光电(苏州)有限公司 | 一种氮化镓基发光二极管外延片及其制作方法 |
CN113451459A (zh) * | 2020-11-02 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | 发光二极管、外延结构及其制作方法 |
CN115986023A (zh) * | 2022-11-29 | 2023-04-18 | 淮安澳洋顺昌光电技术有限公司 | 一种外延片及包含该外延片的发光二极管 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101174662A (zh) * | 2006-10-30 | 2008-05-07 | 璨圆光电股份有限公司 | 具有载子提供层的多重量子井氮化物发光二极管 |
CN102185056A (zh) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | 提高电子注入效率的氮化镓基发光二极管 |
CN204577452U (zh) * | 2015-04-24 | 2015-08-19 | 广西盛和电子科技股份有限公司 | 一种氮化镓发光二极管的外延结构 |
-
2015
- 2015-04-24 CN CN201510202494.6A patent/CN104795476B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101174662A (zh) * | 2006-10-30 | 2008-05-07 | 璨圆光电股份有限公司 | 具有载子提供层的多重量子井氮化物发光二极管 |
CN102185056A (zh) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | 提高电子注入效率的氮化镓基发光二极管 |
CN204577452U (zh) * | 2015-04-24 | 2015-08-19 | 广西盛和电子科技股份有限公司 | 一种氮化镓发光二极管的外延结构 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106025023A (zh) * | 2016-06-22 | 2016-10-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN106025023B (zh) * | 2016-06-22 | 2019-04-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN107808604A (zh) * | 2017-10-05 | 2018-03-16 | 友达光电股份有限公司 | 显示装置及其控制方法 |
CN107808604B (zh) * | 2017-10-05 | 2020-03-10 | 友达光电股份有限公司 | 显示装置及其控制方法 |
CN108878603A (zh) * | 2018-07-03 | 2018-11-23 | 贵州杰芯光电科技有限公司 | 一种氮化镓led的外延制备方法 |
CN109473525A (zh) * | 2018-10-31 | 2019-03-15 | 华灿光电(苏州)有限公司 | 一种氮化镓基发光二极管外延片及其制作方法 |
CN109473525B (zh) * | 2018-10-31 | 2021-06-29 | 华灿光电(苏州)有限公司 | 一种氮化镓基发光二极管外延片及其制作方法 |
CN113451459A (zh) * | 2020-11-02 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | 发光二极管、外延结构及其制作方法 |
CN113451459B (zh) * | 2020-11-02 | 2022-05-13 | 重庆康佳光电技术研究院有限公司 | 发光二极管、外延结构及其制作方法 |
CN115986023A (zh) * | 2022-11-29 | 2023-04-18 | 淮安澳洋顺昌光电技术有限公司 | 一种外延片及包含该外延片的发光二极管 |
CN115986023B (zh) * | 2022-11-29 | 2024-04-12 | 淮安澳洋顺昌光电技术有限公司 | 一种外延片及包含该外延片的发光二极管 |
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Publication number | Publication date |
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CN104795476B (zh) | 2018-01-30 |
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Effective date of registration: 20151110 Address after: 535000, A219, 1 Ma Ma Avenue, Qinzhou Industrial Park, Qinzhou, the Guangxi Zhuang Autonomous Region Applicant after: Guangxi Qinzhou Hao Yitong Photoelectric Technology Co. Ltd. Address before: 535000 Shuguang garden, hi tech Industrial Development Zone, the Guangxi Zhuang Autonomous Region, Qinzhou Applicant before: GUANGXI SHENGHE ELECTRONIC TECHNOLOGY CO., LTD. |
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