CN104779338A - Manufacturing method of light emitting diode package body - Google Patents
Manufacturing method of light emitting diode package body Download PDFInfo
- Publication number
- CN104779338A CN104779338A CN201410016716.0A CN201410016716A CN104779338A CN 104779338 A CN104779338 A CN 104779338A CN 201410016716 A CN201410016716 A CN 201410016716A CN 104779338 A CN104779338 A CN 104779338A
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- CN
- China
- Prior art keywords
- mould
- emitting diode
- colloid
- cavity
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000084 colloidal system Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000007711 solidification Methods 0.000 claims abstract description 4
- 230000008023 solidification Effects 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 38
- 238000003825 pressing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000001035 drying Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a manufacturing method of a light emitting diode package body. The method comprises the following steps of providing a thin layer with a microstructure region, and a first die, providing a substrate with light emitting diode chips and a circuit structure, and a second die, pasting the substrate on the second die, providing colloid, filling the colloid into a cavity of the thin layer, drying the colloid to form a package layer, and removing the first die, the thin layer and the second die after colloid solidification to allow a microstructure in the microstructure region to be transferred to the surface of the package layer, wherein the cavity is formed in the microstructure region; and the microstructure extends to the cavity to attach the thin layer on the first die. Compared with the prior art, the manufacturing method of the light emitting diode package body does not require manufacturing or designing the dies again under the condition that processes or product purposes are different and microstructures in different shapes or structures are required to be changed, so that the manufacturing cost is lower.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor, particularly relate to a kind of manufacture method of LED encapsulation body.
Background technology
Light-emitting diode has the features such as brightness is high, color rendering good, it is low to consume energy, long service life, it is a kind of solid light source of environmental type, thus be all widely used in a lot of field, light-emitting diode also has the trend gradually replacing the conventional light source such as fluorescent lamp, incandescent lamp.But, after the packed formation packaging body of light-emitting diode chip for backlight unit, because the packed colloid of light-emitting diode chip for backlight unit surrounds, make LED encapsulation body easily total reflection occur when bright dipping, thus cause the light extraction efficiency of LED encapsulation body lower.For addressing this problem, prior art is produced on mould by default micro-structural, then packing colloid filled up mould, makes the microstructure transfer printing in mould to the surface of the encapsulated layer formed by packaging plastic.But, due to processing procedure or the product object difference of optical diode packaging body, often need the micro-structural changing difformity or structure, thus cause needing again to make and designing mould, make the high cost making LED encapsulation body.
Summary of the invention
In view of this, be necessary to provide a kind of manufacture method reducing the LED encapsulation body of the cost of manufacture of LED encapsulation body.
A manufacture method for LED encapsulation body, comprises the steps:
There is provided the thin layer and the first mould with microstructured area, described microstructured area forms cavity, be attached on described first mould by described thin layer, and the micro-structural of described microstructured area extends towards described cavity;
There is provided substrate, light-emitting diode chip for backlight unit and the second mould, be sticked on the substrate by described light-emitting diode chip for backlight unit, the side described substrate not being arranged light-emitting diode chip for backlight unit is sticked on described second mould;
There is provided colloid, the cavity to described thin layer fills described colloid and light-emitting diode chip for backlight unit is covered by described colloid;
Dry described colloid and form encapsulated layer;
After described colloid solidification, remove described first mould, thin layer and the second mould, make the shape and structure of described microstructured area be transferred to the surface of described encapsulated layer.
Compared with prior art, the method that the present invention makes LED encapsulation body when the processing procedure of LED encapsulation body or product object different, need the micro-structural changing different shapes or structure, do not need again to make and design the first mould, make the cost of manufacture of LED encapsulation body lower.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of LED encapsulation body in the embodiment of the present invention one.
Fig. 2 to Fig. 6 is each step schematic diagram of the manufacture method of LED encapsulation body in the embodiment of the present invention one.
Fig. 7 is the enlarged drawing at VII place in Fig. 4.
Fig. 8 is the schematic diagram of injecting glue process in the manufacture method of LED encapsulation body in the embodiment of the present invention two.
Fig. 9 is the cutaway view of thin layer in the embodiment of the present invention three.
Figure 10 is the cutaway view of LED encapsulation body in the embodiment of the present invention three.
Main element symbol description
| LED encapsulation body | 100、100b、100a |
| First mould | 10、11、12、111、112 |
| Thin layer | 20、21、22、23、221、22220a、21a、22a、23a、221a、222a |
| Light-emitting diode chip for backlight unit | 30 |
| Substrate | 40、41、42 |
| Second mould | 50、51、52 |
| Encapsulated layer | 60、60a、61、61a、62、62a |
| Point gum machine | 70 |
| Colloid | 80 |
| Injecting glue space | 90 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Fig. 1 shows the flow process of the manufacture method of the LED encapsulation body in the embodiment of the present invention one.
As shown in Figure 1, the step of the manufacture method of LED encapsulation body of the present invention comprises:
Thin layer and one first mould that S1 provides one to have a microstructured area, described microstructured area forms cavity, be attached on described first mould by described thin layer, and the micro-structural of described microstructured area extends towards described cavity;
S2 provides substrate, light-emitting diode chip for backlight unit and the second mould, described light-emitting diode chip for backlight unit is sticked on the substrate, the side described substrate not being arranged light-emitting diode chip for backlight unit is sticked on described second mould, then makes described first mould and the second mould matched moulds and makes described cavity around described light-emitting diode chip for backlight unit;
S3 provides the point gum machine that colloid is housed, and makes described colloid fill the cavity of described thin layer;
S4 is dried described colloid and is formed encapsulated layer;
S5, after described colloid solidification, removes described first mould, thin layer and the second mould, makes the shape and structure of described microstructured area be transferred to the surface of described encapsulated layer;
S6 utilizes cutting method to cut described substrate, forms multiple package assembling.
Below in conjunction with other diagrams, described flow process is elaborated.
Refer to Fig. 2, provide a thin layer 20, described thin layer 20 adopts cheap material to be made, and it comprises multiple spaced microstructured area 22 and between two adjacent microstructured area 22, in order to connect the bonding pad 21 of two microstructured area 22.In the present embodiment, the longitudinal section of described microstructured area 22 is in the arc towards thin layer 20 side evagination, and understandable, in other embodiments, the longitudinal section of described microstructured area 22 also can be other shape.Described microstructured area 22 comprises the micro-structural 221 that a main part 222 that is smooth, arc and main body 222 protrude out towards bonding pad 21.The inner surface of described main part 222 encloses the cavity 23 of formation one arc.The longitudinal section of described bonding pad 21 is the plane of a lengthwise.
Described micro-structural 221 utilizes lithography or photoresist to be made.Please simultaneously see Fig. 7, the longitudinal section of described micro-structural 221 is the evagination triangle of uniformly continous arrangement.Understandable, in other embodiments, described micro-structural 221 can have other shapes, as long as can reach the light extraction efficiency promoting LED encapsulation body 100.
Referring again to Fig. 2, provide one first mould 10, the upper surface 12 that described first mould 10 comprises a lower surface 11 and is oppositely arranged with lower surface 11.Described lower surface 11 comprise multiple interval forming surface 112 and between two forming surface 112 for connecting the interface 111 of two forming surface 112.The coplanar setting of described interface 111 and size is corresponding with the bonding pad 21 of thin layer 20.Described forming surface 112 is recessed to form towards upper surface 12 from the medial extremity that two interfaces 111 are relative, and its shape and size are corresponding with the microstructured area 22 of thin layer 20.
Utilize the method for vacuum suction, described thin layer 20 is attached to the lower surface 11 of described first mould 10, fitted with the forming surface 112 of the lower surface 11 of described first mould 10 in the microstructured area 22 of described thin layer 20, fit with the interface 111 of the lower surface 11 of described first mould 10 in the bonding pad 21 of described thin layer 20 simultaneously.
Referring again to Fig. 2, provide one with the substrate 40 of circuit structure (not shown).The longitudinal section of described substrate 40 is the plane of a lengthwise, one second face 42 comprising a first surface 41 and parallel with first surface 41.Described substrate 40 is the plate body that heat conductivility is good.In the present embodiment, described substrate 40 is pcb board.
Multiple light-emitting diode chip for backlight unit 30 is provided, described light-emitting diode chip for backlight unit 30 is sticked on the first surface 41 of described substrate 40, and described light-emitting diode chip for backlight unit 30 is electrically connected with the circuit structure of described substrate 40.
Referring again to Fig. 2, provide one second mould 50, described second mould 50 is a plate body and its longitudinal section is the plane of a lengthwise.Described second mould 50 comprises upper surface 51 and the lower surface 52 paralleled with described upper surface 51.
Second face 42 of described substrate 40 is attached at the upper surface 51 of described second mould 50.
Refer to Fig. 3, the point gum machine 70 that is equipped with colloid 80 is provided, then operates described point gum machine 70, described colloid 80 is filled the cavity 23 of described thin layer 20, and fill up the gap between micro-structural 221.
Described colloid 80 is formed by pure silicon glue or doped with the silica gel material of fluorescent material, and the fluorescent material of these doping can be that independent a kind of powder also can be mixed to form by multiple powder.
See Fig. 4, by described first mould 10 and the corresponding pressing of described second mould 50.During pressing, described light-emitting diode chip for backlight unit 30 to be clamp-oned in colloid in described cavity 23 80 and is just in time positioned at the top middle portion of described cavity 23, and described micro-structural 221 is around in the periphery of described light-emitting diode chip for backlight unit 30 simultaneously.After pressing completes, described thin layer 20 is fitted completely with described substrate 40, and upward, the lower surface 52 of described second mould 50 down for the upper surface 12 of described first mould 10.
Simultaneously see Fig. 5, the colloid 80 in the cavity 23 of described thin layer 20 please be dried, makes it solidify rear formation one encapsulated layer 60, then remove described first mould 10, thin layer 20 and the second mould 50.
Described encapsulated layer 60 is transparent or semitransparent material, and its longitudinal section is the semicircle from described substrate 40 evagination, has an arc exiting surface 61.
In the bonding processes of described first mould 10 and the second mould 50, the shape and structure of the micro-structural 221 of described thin layer 20 is transferred on the exiting surface 61 of described encapsulated layer 60, and therefore the outer surface of described exiting surface 61 is that to have longitudinal section be evagination, a leg-of-mutton roughened surface 62.Described roughened surface 62 is the solid arrays agreed with mutually with the micro-structural 221 of described thin layer 20.
Refer to Fig. 5 and Fig. 6, utilize cutting method to cut described substrate 40, form multiple LED encapsulation body 100.Described LED encapsulation body 100 comprises at least one described light-emitting diode chip for backlight unit 30.
LED encapsulation body 100 like this manufactures complete.
Compared with prior art, the method that the present invention makes LED encapsulation body 100 when the processing procedure of LED encapsulation body 100 or product object different, need to change different shapes or structure micro-structural 221, do not need again to make and design the first mould 10, make the cost of manufacture of LED encapsulation body 100 lower.
In addition, the micro-structural 221 in the present invention utilizes lithography or photoresist to be made, and effectively can improve the precision of described micro-structural, thus improve the light extraction efficiency of LED encapsulation body 100.
The manufacture process of the LED encapsulation body 100b of the embodiment of the present invention two is similar to the manufacture process of LED encapsulation body 100 in embodiment one, and difference is:
Refer to Fig. 8, by described first mould 10 and the corresponding pressing of described second mould 50, after pressing completes, between described substrate 40 with described thin layer 20, have the injecting glue space 90 that is communicated with the cavity 23 of thin layer 20.
Point gum machine 70 starts injecting glue until fill the cavity 23 of thin layer 20 from described injecting glue space 90.
Refer to Fig. 6, after having encapsulated, the structure of described LED encapsulation body 100b is the same with described LED encapsulation body 100 with profile.
LED encapsulation body 100a manufacture process in the embodiment of the present invention three is the same with the first two embodiment, and difference is the shape of the microstructured area 22a of thin layer 20a.
Refer to Fig. 9, in the present embodiment, the longitudinal section of the microstructured area 22a of described thin layer 20a becomes the rectangle of evagination, comprises the micro-structural 221a that a smooth rectangular main part 222a and main body 222a protrudes out towards bonding pad 21a.The inner surface of described main part 222a encloses the rectangular cavity 23a of formation one.The longitudinal section of described bonding pad 21a is the plane of a lengthwise.
Refer to Figure 10, accordingly, after having encapsulated, the longitudinal section of described encapsulated layer 60a is cuboid, and it has the rectangle exiting surface 61a from substrate 40 evagination.The surface of described exiting surface 61a is a roughened surface 62a.
Claims (7)
1. a manufacture method for LED encapsulation body, comprises the steps:
There is provided the thin layer and the first mould with microstructured area, described microstructured area forms cavity, be attached on described first mould by described thin layer, and the micro-structural of described microstructured area extends towards described cavity;
There is provided substrate, light-emitting diode chip for backlight unit and the second mould, be sticked on the substrate by described light-emitting diode chip for backlight unit, the side described substrate not being arranged light-emitting diode chip for backlight unit is sticked on described second mould;
There is provided colloid, the cavity to described thin layer fills described colloid, and light-emitting diode chip for backlight unit is covered by described colloid;
Dry described colloid and form encapsulated layer;
After described colloid solidification, remove described first mould, thin layer and the second mould, with the surface making the shape and structure of described micro-structural be transferred to described encapsulated layer.
2. the manufacture method of LED encapsulation body as claimed in claim 1, it is characterized in that: fill colloid in described cavity after, make described first mould from light-emitting diode chip for backlight unit side and the corresponding pressing of the second mould, and make described light-emitting diode chip for backlight unit enter cavity and be covered by colloid.
3. the manufacture method of LED encapsulation body as claimed in claim 1, it is characterized in that: fill colloid in described cavity before, make described first mould from light-emitting diode chip for backlight unit side and the corresponding pressing of the second mould, and make described cavity around described light-emitting diode chip for backlight unit, then fill colloid to affiliated cavity.
4. the manufacture method of LED encapsulation body as claimed in claim 1, is characterized in that: the longitudinal section of described microstructured area is arc or the rectangle of evagination.
5. the manufacture method of LED encapsulation body as claimed in claim 4, is characterized in that: described micro-structural utilizes lithography or photoresist to be made.
6. the manufacture method of LED encapsulation body as claimed in claim 5, is characterized in that: the longitudinal section of described micro-structural is the evagination triangle of uniformly continous arrangement.
7. the manufacture method of LED encapsulation body as claimed in claim 1, is characterized in that: described encapsulated layer is transparent or semitransparent material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410016716.0A CN104779338A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of light emitting diode package body |
| TW103101589A TW201528554A (en) | 2014-01-15 | 2014-01-16 | Method for manufacturing light emitting diode package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410016716.0A CN104779338A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of light emitting diode package body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104779338A true CN104779338A (en) | 2015-07-15 |
Family
ID=53620694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410016716.0A Pending CN104779338A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of light emitting diode package body |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104779338A (en) |
| TW (1) | TW201528554A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256921A (en) * | 2017-05-27 | 2017-10-17 | 深圳雷曼光电科技股份有限公司 | COB LED encapsulation methods, display device and lighting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060105484A1 (en) * | 2004-11-15 | 2006-05-18 | Grigoriy Basin | Molded lens over LED die |
| CN101847683A (en) * | 2009-02-17 | 2010-09-29 | 日东电工株式会社 | The sheet that is used for the photosemiconductor encapsulation |
| CN102203965A (en) * | 2008-11-05 | 2011-09-28 | 飞利浦拉米尔德斯照明设备有限责任公司 | Overmolded phosphor lens for an LED |
| CN102271887A (en) * | 2009-01-08 | 2011-12-07 | 旭硝子株式会社 | Mold-releasing film and method for manufacturing light emitting diode |
-
2014
- 2014-01-15 CN CN201410016716.0A patent/CN104779338A/en active Pending
- 2014-01-16 TW TW103101589A patent/TW201528554A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060105484A1 (en) * | 2004-11-15 | 2006-05-18 | Grigoriy Basin | Molded lens over LED die |
| CN102203965A (en) * | 2008-11-05 | 2011-09-28 | 飞利浦拉米尔德斯照明设备有限责任公司 | Overmolded phosphor lens for an LED |
| CN102271887A (en) * | 2009-01-08 | 2011-12-07 | 旭硝子株式会社 | Mold-releasing film and method for manufacturing light emitting diode |
| CN101847683A (en) * | 2009-02-17 | 2010-09-29 | 日东电工株式会社 | The sheet that is used for the photosemiconductor encapsulation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256921A (en) * | 2017-05-27 | 2017-10-17 | 深圳雷曼光电科技股份有限公司 | COB LED encapsulation methods, display device and lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201528554A (en) | 2015-07-16 |
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Application publication date: 20150715 |