CN104779192B - Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface - Google Patents
Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface Download PDFInfo
- Publication number
- CN104779192B CN104779192B CN201410010882.XA CN201410010882A CN104779192B CN 104779192 B CN104779192 B CN 104779192B CN 201410010882 A CN201410010882 A CN 201410010882A CN 104779192 B CN104779192 B CN 104779192B
- Authority
- CN
- China
- Prior art keywords
- protection glue
- glue
- processing procedure
- wafer gap
- cutting method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003292 glue Substances 0.000 title claims abstract description 95
- 230000004224 protection Effects 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000002271 resection Methods 0.000 claims abstract description 7
- 230000000717 retained effect Effects 0.000 claims description 6
- 238000007373 indentation Methods 0.000 claims 1
- 239000010893 paper waste Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
It is a kind of that Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface; the Protection glue cutting method is after rubberizing processing procedure; carried out before grinding back surface and rotation etching processing procedure; the Protection glue cutting method by the Protection glue complete resection at wafer gap, does not remain the Protection glue at partial notch.Present invention ensures that the higher and thicker diaphragm of viscosity can be used to protect wafer surface, the success rate for tearing glue is improved again on the basis of waste paper rate is reduced.
Description
Technical field
Lack the present invention relates to field of semiconductor manufacture, more particularly to a kind of chip that grinding processing procedure is thinned for chip back surface
Protection glue cutting method at mouthful.
Background technology
When carrying out chip back surface grinding processing procedure, it is necessary first to paste one layer of Protection glue on the surface of chip 101 using glue plastering machine
102（As shown in Figure 1）, the Protection glue 102 can be in ensuing grinding back surface and rotation etching processing procedure, protection chip 101
Surface is without prejudice, after overleaf thinned grinding processing procedure terminates, recycles and tears the Protection glue 102 that glue machine removes wafer surface.
As shown in Fig. 2 when tearing glue, tearing glue machine ensures that tearing the close adhesion of glue adhesive tape 104 lives protection using support shaft 103
The back side of glue 102, the surface of chip 101 is torn off by Protection glue 102.
Under normal circumstances, if more preferable wafer surface protecting effect can be obtained using the higher Protection glue of viscosity, still
When tearing glue, the higher Protection glue of viscosity is not allowed but to be readily removable, and this adds increased waste paper rate and have impact on the normal of equipment and makes
Use the time.If on the contrary, using the relatively low Protection glue of viscosity, such as UV Protection glues, this Protection glue compares appearance when tearing glue
Easily it is cleaned, but overleaf in grinding processing procedure, wafer surface is easily scratched, and in rotation etching processing procedure, it is brilliant
Easily corroded by acid solution on piece surface.
Therefore, the higher Protection glue of viscosity can still typically be selected, then will try every possible means to improve the success rate for tearing glue.
Tearing glue process is proceeded by from wafer gap portion, before glue is torn, and is torn glue machine and is first had to detect wafer gap
105 positions, it is determined that after gap position, tear glue machine using support shaft 103, will tear glue adhesive tape 104 since at the position of breach 105
Protection glue 102 is bonded, Protection glue 102 is torn off into the surface of chip 101.
The position of wafer gap 105 is measured in order to ensure tearing glue machine examination, after rubberizing process terminates, grinding back surface and rotation are carved
Lose before processing procedure starts, it is necessary to be cut to the Protection glue 102 at wafer gap 105, traditional cutting method has following two
Kind：
1st, as shown in figure 3, the Protection glue at wafer gap is cut off completely；
2nd, as shown in figure 4, not cutting, the Protection glue at wafer gap is fully retained.
For first method, if using the higher and thicker diaphragm of viscosity, tearing glue process and easily failing.For
Second method, it is difficult to detect wafer gap position to tear glue machine, and sends alarm.
The content of the invention
Protection glue cutting method at a kind of wafer gap for the thinned grinding processing procedure of chip back surface that the present invention is provided, really
Diaphragm that viscosity can be used higher and thicker is protected to protect wafer surface, has been improved again on the basis of waste paper rate is reduced
Tear the success rate of glue.
In order to achieve the above object, the present invention provides a kind of be thinned for chip back surface at the wafer gap of grinding processing procedure and protected
Glue cutting method is protected, described chip back surface is thinned grinding processing procedure and comprised the steps of：
Step 1, using glue plastering machine wafer surface paste one layer of Protection glue；
Step 2, the Protection glue at wafer gap is cut；
Step 3, grinding back surface and rotation etching processing procedure are carried out to chip；
Step 4, utilize tear glue machine remove wafer surface Protection glue；
In described step 2, the Protection glue cutting method by the Protection glue complete resection at wafer gap, is not remained
Protection glue at partial notch.
In described step 2, the angle on the side of the Protection glue retained at wafer gap and wherein one side of wafer gap
For α, α scope is 10 °~25 °.
The present invention also provides Protection glue cutting method at a kind of wafer gap for the thinned grinding processing procedure of chip back surface, should
Protection glue cutting method is carried out, the Protection glue cutting method after rubberizing processing procedure before grinding back surface and rotation etching processing procedure
Not by the Protection glue complete resection at wafer gap, the Protection glue at partial notch is remained.
The angle on the side of the Protection glue retained at wafer gap and wherein one side of wafer gap is α, and α scope is
10 °~25 °.
Present invention ensures that the higher and thicker diaphragm of viscosity can be used to protect wafer surface, waste paper is being reduced
The success rate for tearing glue is improved on the basis of rate again.
Brief description of the drawings
Fig. 1 is the chip architecture schematic diagram for having pasted diaphragm.
Fig. 2 is the schematic diagram for tearing glue process.
Fig. 3 is by the complete resection of schematic diagram of Protection glue at wafer gap.
Fig. 4 is the schematic diagram that the Protection glue at wafer gap is fully retained.
Fig. 5 is the schematic diagram of Protection glue cutting method at the wafer gap of the invention provided.
Fig. 6 is the enlarged diagram in A portions in Fig. 5.
Embodiment
Below according to Fig. 5 and Fig. 6, presently preferred embodiments of the present invention is illustrated.
The thinning back side grinding processing procedure of chip is comprised the steps of：
Step 1, using glue plastering machine wafer surface paste one layer of Protection glue；
Step 2, the Protection glue at wafer gap is cut；
Step 3, grinding back surface and rotation etching processing procedure are carried out to chip；
Step 4, utilize tear glue machine remove wafer surface Protection glue.
Cut as shown in figure 5, the present invention provides Protection glue at a kind of wafer gap for the thinned grinding processing procedure of chip back surface
Segmentation method, this method is carried out, the Protection glue cutting method is simultaneously after rubberizing processing procedure before grinding back surface and rotation etching processing procedure
Not by the complete resection of Protection glue 102 at wafer gap 105, but remain the Protection glue at partial notch.
As shown in fig. 6, the angle on the side of the Protection glue of reservation and wherein one side of wafer gap is α, α at wafer gap
Scope be 10 °~25 °.
The Protection glue cutting method that the present invention is provided, adds the lifting surface area of Protection glue when tearing glue, reduces and tear glue
Mortality, and avoid and tear glue machine and can not detect wafer gap position and send alarm.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (2)
1. a kind of be thinned Protection glue cutting method at the wafer gap of grinding processing procedure for chip back surface, it is characterised in that described
Chip back surface be thinned grinding processing procedure comprise the steps of：
Step 1, using glue plastering machine wafer surface paste one layer of Protection glue；
Step 2, the Protection glue at wafer gap is cut；
Step 3, grinding back surface and rotation etching processing procedure are carried out to chip；
Step 4, utilize tear glue machine remove wafer surface Protection glue；
In described step 2, the Protection glue cutting method by the Protection glue complete resection at wafer gap, does not remain part
The angle on the side of the Protection glue retained at the Protection glue of indentation, there, wafer gap and wherein one side of wafer gap is α, α's
Scope is 10 °~25 °.
2. a kind of be thinned Protection glue cutting method at the wafer gap of grinding processing procedure for chip back surface, it is characterised in that the guarantor
Glue cutting method is protected after rubberizing processing procedure, is carried out before grinding back surface and rotation etching processing procedure, the Protection glue cutting method does not have
Have the Protection glue complete resection at wafer gap, remain the protection retained at the Protection glue at partial notch, wafer gap
The angle on the side of glue and wherein one side of wafer gap is α, and α scope is 10 °~25 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410010882.XA CN104779192B (en) | 2014-01-10 | 2014-01-10 | Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410010882.XA CN104779192B (en) | 2014-01-10 | 2014-01-10 | Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104779192A CN104779192A (en) | 2015-07-15 |
| CN104779192B true CN104779192B (en) | 2017-10-27 |
Family
ID=53620592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410010882.XA Active CN104779192B (en) | 2014-01-10 | 2014-01-10 | Protection glue cutting method at the wafer gap of grinding processing procedure is thinned for chip back surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104779192B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447407A (en) * | 2007-11-26 | 2009-06-03 | 日东电工株式会社 | Method for cutting protective tape of semiconductor wafer and protective tape cutting device |
| CN102205687A (en) * | 2010-03-10 | 2011-10-05 | 三菱电机株式会社 | Method and apparatus for peeling protective tape |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5004515B2 (en) * | 2006-06-16 | 2012-08-22 | 信越ポリマー株式会社 | Carrier jig |
-
2014
- 2014-01-10 CN CN201410010882.XA patent/CN104779192B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447407A (en) * | 2007-11-26 | 2009-06-03 | 日东电工株式会社 | Method for cutting protective tape of semiconductor wafer and protective tape cutting device |
| CN102205687A (en) * | 2010-03-10 | 2011-10-05 | 三菱电机株式会社 | Method and apparatus for peeling protective tape |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104779192A (en) | 2015-07-15 |
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| GR01 | Patent grant |