CN104777650B - Tft array substrate, its production method, liquid crystal display panel and display device - Google Patents

Tft array substrate, its production method, liquid crystal display panel and display device Download PDF

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Publication number
CN104777650B
CN104777650B CN201510193977.4A CN201510193977A CN104777650B CN 104777650 B CN104777650 B CN 104777650B CN 201510193977 A CN201510193977 A CN 201510193977A CN 104777650 B CN104777650 B CN 104777650B
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layer
groove
tft array
electrode metal
metal layer
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CN104777650A (en
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梁魁
封宾
白金超
袁剑峰
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background

Abstract

The invention discloses a kind of tft array substrate, its production method, liquid crystal display panel and display devices, including:The public electrode metal layer in triangular shape between two PAD regions is arranged on underlay substrate in underlay substrate, and the insulating layer being arranged on public electrode metal layer, and PAD region is the wiring area of the display area periphery on tft array substrate;Wherein, the surface of insulating layer has at least one first groove.Due to being provided at least one first groove on the insulating layer, it can be used for weakening orientation coating solution and assemble to public electrode metal layer region and to external diffusion, the orientation coating solution for solving display area reduces and solution is unevenly distributed, the orientation film thickness of formation is partially thin and uniformity is poor, it is bad to lead to the problem of moire, having reached enables the orientation coating solution of display area to be uniformly distributed, and avoids moire bad, and then improves the quality of display panel.

Description

Tft array substrate, its production method, liquid crystal display panel and display device
Technical field
The present invention relates to display technology field, espespecially a kind of tft array substrate, its production method, liquid crystal display panel and Display device.
Background technology
The rotation side that liquid crystal display panel (Liquid Crystal Display, LCD) passes through control liquid crystal molecule at present To the light for penetrating liquid crystal layer is controlled with rotation angle, to show the image of various gray scales, with high picture quality, body The advantages that product is small, light-weight, is widely used in the products such as mobile phone, laptop, television set and display.Usually In the case of, in order to make the regular arrangement of the long axis direction of most of liquid crystal molecule, thin film transistor (TFT) (the Thin Film in LCD Transistor, TFT) alignment film is formed in array substrate.
Existing tft array substrate is provided with display area (areas AA) and multiple as shown in Figure 1a on underlay substrate 001 Wiring area (in Fig. 1 a for 2) (areas PAD), the region between the areas each two PAD are the public electrode gold in triangular shape Belong to 002 region of layer, wherein the height of public electrode metal layer region is typically less than or equal to the height of display area Degree;Fig. 1 b be Fig. 1 a in public electrode metal layer region along the directions A-A ' cross-sectional view, including:Underlay substrate 001, the public electrode metal layer 002 and insulating layer 003 being successively set on underlay substrate 001.Carrying out alignment film coating Ink jet printing mode is usually selected in the process, after ink jet printing mode coating, when orientation coating solution is spread, due to conventional design Public electrode metal layer region is flat in triangular shape and overall surface, and orientation coating solution is easy to from both ends to two I.e. triangle public electrode metal region assembles and to external diffusion at the gap of the boundaries PAD, causes the alignment film of display area molten Liquid is reduced and is unevenly distributed, and then alignment film is partially thin when leading to hot setting and uniformity is poor, and it is bad that moire easily occurs.
Therefore, how to realize that the orientation film thickness of display area is more uniform, improvement moire is bad, is those skilled in the art The technical issues of urgent need to resolve.
Invention content
In view of this, the embodiment of the present invention provides a kind of tft array substrate, its production method, liquid crystal display panel and aobvious Showing device can enable the orientation coating solution of display area be uniformly distributed, avoid moire bad, and then improve display panel Quality.
Therefore, an embodiment of the present invention provides a kind of tft array substrates, including:Underlay substrate is arranged in the substrate base Public electrode metal layer on plate between two PAD regions in triangular shape, and be arranged in the public electrode metal layer On insulating layer, the PAD region be the tft array substrate on display area periphery wiring area;Wherein,
The surface of the insulating layer has at least one first groove.
In one possible implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, further include: The transparency conducting layer for being arranged on the insulating layer and being in direct contact with the insulating layer;The transparency conducting layer have with it is described Second groove of the first groove match of insulating layer, and the transparency conducting layer passes through first groove and the common electrical Pole metal layer is electrical connected.
In one possible implementation, described public in above-mentioned tft array substrate provided in an embodiment of the present invention There is third groove corresponding with the first groove location of the insulating layer on at least part of surface of electrode metal layer.
In one possible implementation, described public in above-mentioned tft array substrate provided in an embodiment of the present invention The grid same layer of electrode metal layer and the tft array substrate is arranged;
The insulating layer includes the gate insulation layer and passivation layer being stacked on the underlay substrate, at least one described First groove is between the gate insulation layer and passivation layer.
In one possible implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, further include: It is provided with second electrode metal layer between the underlay substrate and the public electrode metal layer.
In one possible implementation, described public in above-mentioned tft array substrate provided in an embodiment of the present invention The source-drain electrode same layer of electrode metal layer and the tft array substrate is arranged;
The insulating layer is passivation layer, and the passivation layer has at least one first groove.
In one possible implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, described first The opening shape of groove, second groove and the third groove is strip or poroid.
The embodiment of the present invention additionally provides a kind of production method of above-mentioned tft array substrate provided in an embodiment of the present invention, Including:
The figure of public electrode metal layer is formed on underlay substrate;
The figure of the insulating layer at least one first groove is formed on the public electrode metal layer.
In one possible implementation, the production method of above-mentioned tft array substrate provided in an embodiment of the present invention, It is described to be formed after the figure of the insulating layer at least one first groove, including:
The figure of the transparency conducting layer with the second groove is formed on the insulating layer, and the transparency conducting layer passes through First groove is electrical connected with the public electrode metal layer.
The embodiment of the present invention additionally provides a kind of liquid crystal display panel, including the opposite substrate and tft array being oppositely arranged Substrate, and the liquid crystal layer between the opposite substrate and tft array substrate;Wherein,
The tft array substrate is above-mentioned tft array substrate provided in an embodiment of the present invention.
The embodiment of the present invention additionally provides a kind of display device, including above-mentioned LCD display provided in an embodiment of the present invention Plate.
The advantageous effect of the embodiment of the present invention includes:
A kind of tft array substrate, its production method, liquid crystal display panel and display device provided in an embodiment of the present invention, Including:The public electrode metal layer in triangular shape between two PAD regions is arranged on underlay substrate in underlay substrate, with And the insulating layer on public electrode metal layer is set, PAD region is the wiring region of the display area periphery on tft array substrate Domain;Wherein, the surface of insulating layer has at least one first groove.It is recessed due to being provided at least one first on the insulating layer Slot can be used for weakening orientation coating solution and assemble to public electrode metal layer region and to external diffusion, solve viewing area The orientation coating solution in domain is reduced and solution is unevenly distributed, and the orientation film thickness of formation is partially thin and uniformity is poor, generates moire Bad problem, having reached enables the orientation coating solution of display area to be uniformly distributed, and avoids moire bad, and then improves display The quality of panel.
Description of the drawings
Fig. 1 a are the vertical view of tft array substrate in the prior art;
Fig. 1 b are public electrode metal layer region in Fig. 1 a along the cross-sectional view in the directions A-A ';
Fig. 2 a to Fig. 2 f are respectively the structural schematic diagram of tft array substrate provided in an embodiment of the present invention;
Fig. 3 a to Fig. 3 c are respectively public electrode metal layer region in tft array substrate provided in an embodiment of the present invention Vertical view;
Fig. 4 to Fig. 7 is respectively the production method flow chart of tft array substrate provided in an embodiment of the present invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, to the tool of tft array substrate provided in an embodiment of the present invention, its production method and display device Body embodiment is described in detail.
Wherein, the thickness of each film layer and shape do not reflect that the actual proportions of tft array substrate, purpose are only illustrated in attached drawing Illustrate the content of present invention.
An embodiment of the present invention provides a kind of tft array substrates, as shown in Figure 2 a, including:Underlay substrate 100, setting exist Public electrode metal layer 200 on underlay substrate 100 between two PAD regions in triangular shape, and be arranged in common electrical Insulating layer 300 on pole metal layer 200, PAD region referred herein are the wiring of the display area periphery on tft array substrate Region;Wherein,
The surface of the insulating layer 300 has at least one first groove A.
In above-mentioned tft array substrate provided in an embodiment of the present invention, due to the insulating layer in public electrode metal layer It is upper (in patterning processes, the insulating layer of the first groove A corresponding positions to be carved completely provided at least one first groove A Eating away or partial etching fall, i.e., the depth of the first groove A is less than or equal to the thickness of insulating layer), it can be used for weakening alignment film Solution is assembled to public electrode metal layer region and to external diffusion, and the orientation coating solution for solving display area is reduced and molten Liquid is unevenly distributed, and the orientation film thickness of formation is partially thin and uniformity is poor, leads to the problem of that moire is bad, and having reached makes display The orientation coating solution in region can be uniformly distributed, and avoid moire bad, and then improve the quality of display panel.
In the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, in order to reduce common electrical The resistance of pole metal layer 200, as shown in Figure 2 b, which can also include:It is arranged on insulating layer 300 and and insulating layer 300 transparency conducting layers 400 being in direct contact;The transparency conducting layer 400 passes through 200 electricity of the first groove A and public electrode metal layer Property be connected (at this point, in patterning processes, the insulating layer 300 of the first groove A corresponding positions must etch away completely, i.e., first is recessed The depth of slot A is equal to the thickness of insulating layer 300), in this way since transparency conducting layer 400 passes through the first groove A (being equivalent to via) It is electrical connected with public electrode metal layer 200, the resistance of public electrode metal layer 200 can be reduced to greatest extent, improve public Common electrode metal layer 200 transmits signal-to-noise ratio when electric signal, also, the transparency conducting layer 400 should have with insulating layer 300 the The second groove B that one groove A matches, it should be noted that the second groove B for matching with the first groove A, in particular to thoroughly Bright conductive layer 400 directly fills the first groove A, but does not fill up so that transparency conducting layer 400 has the second groove B.Due to transparent The surface of conductive layer 400 has the second groove B, while can also effectively solve the problems, such as that the diffusion of orientation coating solution is non-uniform, keeps away Exempt from moire occur bad.
In the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, in order to improve transparency conducting layer 400 with the engagement capacity of public electrode metal layer 200, as shown in Figure 2 c, the public electrode metal layer 200 it is at least part of There can be third groove C corresponding with the first groove location A of insulating layer 300 (public at this point, in patterning processes on surface The top layer of common electrode metal layer can be fallen with partial etching, i.e., the total depth of the first groove and third groove is less than insulating layer and public The overall thickness of electrode metal layer).It should be noted that the first groove A is corresponding with third groove location of C, specific manufacture craft refers to Be that through overexposure, etching, the figure of the first groove A and third groove C can be formed simultaneously by same patterning processes.
In the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, as shown in Figure 2 d, when public When electrode metal layer 200 and the grid same layer of tft array substrate are arranged, i.e., the material of public electrode metal layer 200 is grid gold When belonging to material, insulating layer 300 may include the gate insulation layer 301 being stacked on underlay substrate 100 and passivation layer 302, be So that the orientation coating solution of display area is uniformly distributed, avoid moire bad, and offset up and down can be increased, at least one A first groove A can be between gate insulation layer 301 and passivation layer 302, i.e. gate insulation layer 301 and passivation layer 302 has altogether At least one first groove A, specifically in manufacture craft can using gate insulation layer 301 and passivation layer 302 as a whole film layer, By patterning processes, the figure of the first groove A is formed in this whole film layer.
Further, in the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, work as common electrical When pole metal layer 200 and the grid same layer of tft array substrate are arranged, in order to further decrease the electricity of public electrode metal layer 200 Resistance, as shown in Figure 2 e, which can also include:It is provided between underlay substrate 100 and public electrode metal layer 200 Second electrode metal layer 500.TFT substrate can be that advanced super dimension converts (ADvanced Super Dimension at this time Switch, ADS) TFT substrate in panel or plane conversion (In-Plane Switching, IPS) panel.
In the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, as shown in figure 2f, when public When electrode metal layer 200 and the source-drain electrode same layer of tft array substrate are arranged, i.e., the material of public electrode metal layer 200 is source and drain When the metal material of pole, insulating layer 300 can be passivation layer 302, at this time in order to keep the orientation coating solution of display area uniform Distribution, avoids moire bad, and passivation layer 302 has at least one first groove A.In addition, in underlay substrate 100 and public electrode Gate insulation layer 301 can be provided between metal layer 200.
In the specific implementation, in above-mentioned tft array substrate provided in an embodiment of the present invention, the first groove A, the second groove The opening shape of B and third groove C could be provided as strip or poroid.Wherein strip can be strip, striated or other Strip, it is poroid can be circular hole, it is oval poroid or other poroid.Multiple openings are the first groove A, the second groove of strip B or third groove C can be according to mode array arrangement shown in Fig. 3 a, can also be staggered according to mode shown in Fig. 3 b; Multiple openings, which are the first groove A, the second groove B or the third groove C of circular hole, to be arranged according to mode array shown in Fig. 3 c Cloth.
It should be noted that the first groove A, the opening shape of the second groove B and third groove C, number, and arrangement side Formula is configured generally according to actual needs, is not limited thereto.
In the specific implementation, general in tft array substrate provided in an embodiment of the present invention that one can be also gone back on underlay substrate As be formed with the structures such as thin film transistor (TFT), grid line, data line, these concrete structures can not be made herein there are many realization method It limits.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of provided in an embodiment of the present invention TFT gusts above-mentioned The production method of row substrate, since the principle that this method solves the problems, such as is similar to a kind of aforementioned tft array substrate, this method Implementation may refer to the implementation of tft array substrate, overlaps will not be repeated.
In the specific implementation, the production method of tft array substrate provided in an embodiment of the present invention, as shown in figure 4, specific packet Include following steps:
S401, the figure that public electrode metal layer is formed on underlay substrate;
S402, the figure that the insulating layer at least one first groove is formed on public electrode metal layer.
Further, in the specific implementation, in the production method of above-mentioned tft array substrate provided in an embodiment of the present invention In, as shown in figure 5, step S402 may include after the figure for forming the insulating layer at least one first groove:
S403, the figure for forming the transparency conducting layer with the second groove on the insulating layer, and transparency conducting layer passes through the One groove is electrical connected with public electrode metal layer.
The making side of tft array substrate provided in an embodiment of the present invention is described in detail with two specific examples below Method.
Example one:It is as follows as shown in fig. 6, making tft array substrate:
S601, the figure that second electrode metal layer is formed on underlay substrate;
In the specific implementation, when the TFT substrate of making is the substrate in ADS panels or IPS panels, on underlay substrate One layer of second electrode metal layer is deposited, material can be ITO, retain the public electrode that corresponds to and will make by patterning processes The second electrode metal layer of metal layer region;
S602, the figure that public electrode metal layer is formed on the underlay substrate for being formed with second electrode metal layer;
In the specific implementation, one layer of gate metal material is deposited on second electrode metal layer, by patterning processes, specifically The method that coating, deposition, sputtering etc. may be used forms the figure in triangular shape and flat public electrode metal layer;
S603, the figure that gate insulation layer and passivation layer at least one first groove are formed on public electrode metal layer Shape;
In the specific implementation, one layer of gate insulator layer material and passivation material are deposited on public electrode metal layer, are passed through Same patterning processes to corresponding to the first groove location gate insulator layer material and passivation material etched completely;It needs Bright, the top layer portion of public electrode metal layer can etch away a part in this patterning processes, alternatively, to top layer portion Divide without etching, is not limited thereto;
S604, the figure for forming the transparency conducting layer with the second groove on the passivation layer, and transparency conducting layer passes through the One groove is electrical connected with public electrode metal layer.
In the specific implementation, Direct precipitation layer of transparent conductive layer, material can be ITO on the passivation layer, at this point, due to The first groove is had been formed on passivation layer, the ITO layer of formation can form the second groove with the first matching grooves, and and common electrical Pole metal layer is electrical connected.
So far, the above-mentioned steps S601 to S604 provided by example one has produced provided in an embodiment of the present invention above-mentioned Tft array substrate.
Example two:It is as follows as shown in fig. 7, making tft array substrate:
S701, the figure that gate insulation layer is formed on underlay substrate;
In the specific implementation, one layer of gate insulation layer is deposited on underlay substrate, corresponding to by patterning processes reservation will The gate insulation layer of the public electrode metal layer region of making;
S702, the figure that public electrode metal layer is formed on the underlay substrate for be formed with gate insulation layer;
In the specific implementation, one layer of source-drain electrode metal material is deposited on gate insulation layer, it, specifically can be with by patterning processes Using the method for coating, deposition, sputtering etc., the figure in triangular shape and flat public electrode metal layer is formed;
S703, the figure that the passivation layer at least one first groove is formed on public electrode metal layer;
In the specific implementation, one layer of passivation material is deposited on public electrode metal layer, passes through same patterning processes pair It is etched completely corresponding to the passivation material of the first groove location;It should be noted that the top layer of public electrode metal layer Part can etch away a part in this patterning processes, alternatively, top layer portion is not limited thereto without etching;
S704, the figure for forming the transparency conducting layer with the second groove on the passivation layer, and transparency conducting layer passes through the One groove is electrical connected with public electrode metal layer.
In the specific implementation, Direct precipitation layer of transparent conductive layer, material can be ITO on the passivation layer, at this point, due to The first groove is had been formed on passivation layer, the ITO layer of formation can form the second groove with the first matching grooves, and and common electrical Pole metal layer is electrical connected.
So far, the above-mentioned steps S701 to S704 provided by example two has produced provided in an embodiment of the present invention above-mentioned Tft array substrate.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of liquid crystal display panel, including any of the above-described kind The tft array substrate of mode and the opposite substrate being oppositely arranged with the tft array substrate, and positioned at tft array substrate and right To the liquid crystal layer between substrate.The implementation of the liquid crystal display panel may refer to the embodiment of above-mentioned tft array substrate, repeat place not It repeats again.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of display device, including the embodiment of the present invention carries The above-mentioned liquid crystal display panel supplied, the display device can be:Mobile phone, tablet computer, television set, display, laptop, Any product or component with display function such as Digital Frame, navigator.For the other essential of the display device Component part is it will be apparent to an ordinarily skilled person in the art that having, and this will not be repeated here, also be should not be used as to this hair Bright limitation.The implementation of the display device may refer to the embodiment of above-mentioned liquid crystal display panel and tft array substrate, repetition Place repeats no more.
A kind of tft array substrate, its production method, liquid crystal display panel and display device provided in an embodiment of the present invention, Including:The public electrode metal layer in triangular shape between two PAD regions is arranged on underlay substrate in underlay substrate, with And the insulating layer on public electrode metal layer is set, PAD region is the wiring region of the display area periphery on tft array substrate Domain;Wherein, the surface of insulating layer has at least one first groove.It is recessed due to being provided at least one first on the insulating layer Slot can be used for weakening orientation coating solution and assemble to public electrode metal layer region and to external diffusion, solve viewing area The orientation coating solution in domain is reduced and solution is unevenly distributed, and the orientation film thickness of formation is partially thin and uniformity is poor, generates moire Bad problem, having reached enables the orientation coating solution of display area to be uniformly distributed, and avoids moire bad, and then improves display The quality of panel.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to include these modifications and variations.

Claims (9)

1. a kind of tft array substrate, including:Underlay substrate, setting are between two PAD regions on the underlay substrate The public electrode metal layer of triangular shape, and the insulating layer that is arranged on the public electrode metal layer, the PAD region is institute State the wiring area of the display area periphery on tft array substrate;It is characterized in that, wherein,
The surface of the insulating layer has at least one first groove;
The transparency conducting layer for being arranged on the insulating layer and being in direct contact with the insulating layer;The transparency conducting layer have with Second groove of the first groove match of the insulating layer, and the transparency conducting layer passes through first groove and the public affairs Common electrode metal layer is electrical connected;
Have on at least part of surface of the public electrode metal layer corresponding with the first groove location of the insulating layer Third groove.
2. tft array substrate as described in claim 1, which is characterized in that the public electrode metal layer and the tft array The grid same layer of substrate is arranged;
The insulating layer includes the gate insulation layer and passivation layer being stacked on the underlay substrate, and at least one described first Groove is between the gate insulation layer and passivation layer.
3. tft array substrate as claimed in claim 2, which is characterized in that further include:In the underlay substrate and described public Second electrode metal layer is provided between electrode metal layer.
4. tft array substrate as described in claim 1, which is characterized in that the public electrode metal layer and the tft array The source-drain electrode same layer of substrate is arranged;
The insulating layer is passivation layer, and the passivation layer has at least one first groove.
5. tft array substrate according to any one of claims 1-4, which is characterized in that first groove, described second recessed The opening shape of slot and the third groove is strip or poroid.
6. a kind of production method of tft array substrate as described in any one in claim 1-5, which is characterized in that including:
The figure of public electrode metal layer is formed on underlay substrate;
The figure of the insulating layer at least one first groove is formed on the public electrode metal layer.
7. production method as claimed in claim 6, which is characterized in that there is the exhausted of at least one first groove in described formed After the figure of edge layer, including:
The figure of the transparency conducting layer with the second groove is formed on the insulating layer, and the transparency conducting layer is described in First groove is electrical connected with the public electrode metal layer.
8. a kind of liquid crystal display panel, including the opposite substrate and tft array substrate that are oppositely arranged, and positioned at the opposite base Liquid crystal layer between plate and tft array substrate;It is characterized in that, wherein,
The tft array substrate is claim 1-5 any one of them tft array substrates.
9. a kind of display device, which is characterized in that including liquid crystal display panel as claimed in claim 8.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109324453A (en) * 2018-09-30 2019-02-12 惠科股份有限公司 A kind of display panel and display device
CN109239991B (en) 2018-10-10 2021-01-08 惠科股份有限公司 Display panel manufacturing process and display panel
CN109212845B (en) 2018-10-25 2021-09-17 合肥鑫晟光电科技有限公司 Display substrate, display device and preparation method of display substrate
CN110061012B (en) * 2019-04-09 2022-01-28 Tcl华星光电技术有限公司 Array substrate, manufacturing method thereof and display panel
CN113009723B (en) * 2019-12-20 2023-12-15 松下电器(美国)知识产权公司 Viewing angle control device, manufacturing method thereof and display panel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101082745A (en) * 2006-05-31 2007-12-05 株式会社日立显示器 Liquid crystal display device
CN102466936A (en) * 2010-11-04 2012-05-23 京东方科技集团股份有限公司 Array substrate, liquid crystal display and manufacturing method of array substrate
CN102636925A (en) * 2011-02-14 2012-08-15 三星电子株式会社 Liquid crystal display

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008099697A1 (en) * 2007-02-13 2008-08-21 Mitsubishi Electric Corporation Display device and method for manufacturing the same
CN101919043B (en) * 2008-01-21 2013-06-05 金振有限公司 Display device
JP5899237B2 (en) * 2011-11-18 2016-04-06 シャープ株式会社 Semiconductor device, display device, and method of manufacturing semiconductor device
CN102854669B (en) * 2012-09-27 2015-01-21 深圳市华星光电技术有限公司 Liquid crystal display panel and manufacturing method thereof
CN103346159B (en) * 2013-06-28 2016-08-31 北京京东方光电科技有限公司 A kind of array base palte and manufacture method, display device
JP6275418B2 (en) * 2013-09-03 2018-02-07 株式会社ジャパンディスプレイ Liquid crystal display
CN103676342B (en) * 2013-12-27 2015-12-09 深圳市华星光电技术有限公司 The fanout area structure of narrow frame liquid crystal display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101082745A (en) * 2006-05-31 2007-12-05 株式会社日立显示器 Liquid crystal display device
CN102466936A (en) * 2010-11-04 2012-05-23 京东方科技集团股份有限公司 Array substrate, liquid crystal display and manufacturing method of array substrate
CN102636925A (en) * 2011-02-14 2012-08-15 三星电子株式会社 Liquid crystal display

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